CN108198926A - A kind of film-type AlGaInP light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of film-type AlGaInP light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN108198926A CN108198926A CN201810093125.1A CN201810093125A CN108198926A CN 108198926 A CN108198926 A CN 108198926A CN 201810093125 A CN201810093125 A CN 201810093125A CN 108198926 A CN108198926 A CN 108198926A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of film-type AlGaInP light-emitting diode chip for backlight unit and preparation method thereof, which includes：Bonding substrate with positive and negative；It is up followed successively by from bonding substrate front side：Substrate-side metal bonding layer, epitaxial-side metal bonding layer, P faces diffusion barrier metal layer, P faces reflective ohmic contact layer；From P faces, reflective ohmic contact layer is up followed successively by p-type current extending, p-type limiting layer, P sides space layer, multiple quantum-well light-emitting area, N sides space layer, N-type limiting layer, N-type roughened layer, N-type ohmic contact layer, N electrode；The reverse side for being bonded substrate is P electrode.The P faces reflective ohmic contact layer that the present invention uses, is provided simultaneously with light reflection and Ohmic contact function；By the blocking of P faces reflective ohmic contact layer, by optimizing the spacing distance of block and the width of N electrode, N electrode corresponding region electric current injection concentration problem can be inhibited, effectively reduce N electrode occlusion effect.The present invention have can effectively improve electro-optical efficiency, advantages of simple structure and simple.
Description
Technical field
The present invention relates to light emitting semiconductor device field, more particularly, to a kind of film-type AlGaInP light-emitting diodes tube cores
Piece and preparation method thereof.
Background technology
Semiconductor light-emitting-diode (Light-Emitting Diodes, LED) has been widely used in many fields,
It is acknowledged as next-generation green illumination light source.With the AlGaInP materials of gallium arsenide substrate Lattice Matching can cover from 560nm to
The visible wavelength of 650nm ranges is to prepare the red excellent material for arriving yellow green LED.AlGaInP-LED is led in solid-state lighting
There are important application, such as full color screen display, lamps for vehicle, backlight, traffic lights and normal lighting lamp in domain
Deng.
In recent years, people have made great progress in epitaxial growth technology, AlGaInP light emitting diode internal quantum efficiencies
Can reach more than 90%, and conventional structure chip is absorbed by substrate and the reasons such as loss at total reflection are influenced, light extraction efficiency less than
10%, so as to which electro-optical efficiency only has 8% or so.
The electro-optical efficiency of AlGaInP light emitting diodes is improved, a kind of very effective method is utilized in GaAs
Grown AlGaInP light emitting diode functional layers, then to silicon, germanium, sapphire etc., there is P face bondings reflection to tie for other
On the substrate of structure, then gallium arsenide substrate is removed, make N electrode and carries out the total reflection damage that surface roughening reduces light gasing surface
Consumption, such industry, which is known as film-type AlGaInP light-emitting diode chip for backlight unit, to promote 5 times of 3 ∽ by the electro-optical efficiency of LED.
Before this, industry proposes many schemes for film-type AlGaInP light-emitting diode chip for backlight unit, and typical structure is as schemed
Shown in 1, Fig. 1 is the structure diagram of AlGaInP film LED chips, including：Be bonded substrate 100, reflective metals conductive layer 101,
Dielectric layer 102, P faces contact electrode 103, p-type current extending 105, p-type limiting layer 106, P sides space layer 107, multiple quantum wells
Luminous zone 108, N sides space layer 109, N-type limiting layer 110, N-type roughened layer 111, N-type ohmic contact layer 112, N electrode 113, P
Electrode 114.
Invention content
First purpose of the present invention is to provide a kind of electro-optical efficiency, of simple structure and low cost of effectively improving
Film-type AlGaInP light-emitting diode chip for backlight unit.
Second object of the present invention is to provide a kind of preparation method of film-type AlGaInP light-emitting diode chip for backlight unit.
What first purpose of the present invention was realized in：
A kind of film-type AlGaInP light-emitting diode chip for backlight unit, including：Bonding substrate with positive and negative；It is characterized in：From bonding base
Plate front is up followed successively by：Substrate-side metal bonding layer, epitaxial-side metal bonding layer, P faces diffusion barrier metal layer, the reflection of P faces
Ohmic contact layer；From P faces, reflective ohmic contact layer is up followed successively by p-type current extending, p-type limiting layer, P sides space layer, more
Quantum well radiation area, N sides space layer, N-type limiting layer, N-type roughened layer, N-type ohmic contact layer, N electrode；It is bonded the reverse side of substrate
For P electrode；P faces reflective ohmic contact layer is Ag Ni/Ag laminated metal structures, is formed with p-type current extending good
Ohmic contact is provided simultaneously with light reflection and Ohmic contact function.
Wherein, N electrode is prepared above the N-type ohmic contact layer of non-roughening, N electrode is Au/Ge/Ni laminated construction；
Spacer region of each N electrode face position for P faces reflective ohmic contact layer, and the center of N electrode and P faces reflective ohmic contact layer
Center it is corresponding, the width a of N electrode is less than the spacing b of P faces reflective ohmic contact layer, and meets a=x*b, x=0.7 ~ 0.9.
Wherein, the width a of N electrode is 1 ~ 20 μm.
Wherein, the Ni/Ag metals that P faces reflective ohmic contact layer uses be lamination, thickness be respectively 0.1 ~ 1nm and 100 ~
300nm。
Wherein, region of the diffusion barrier metal layer in P faces other than the reflective ohmic contact layer of P faces and p-type current extending it
Between be non-ohmic contact.
Wherein, the material of substrate-side metal bonding layer and epitaxial material side metal bonding layer be Sn, In, Ag, Au wherein
It is one or more.
Wherein, the material of P faces diffusion barrier metal layer is Cr, Ti, Pt, Au, Ni, Wu, Cu one of which or metal alloy
TiW, FeNiCr, FeCoCr one of which.
Wherein, the material for being bonded substrate is Si, Ge, GaAs, GaP, Cu, Mo, C one or more of which.
What second object of the present invention was realized in：
A kind of preparation method of film-type AlGaInP light-emitting diode chip for backlight unit, specific steps include：
A, the growing film type AlGaInP LED epitaxial materials in gallium arsenide substrate, the epitaxial material include：Arsenic
Gallium buffer layer, corrosion barrier layer, N-type ohmic contact layer, N-type roughened layer, N-type limiting layer, N sides space layer, multiple quantum well light emitting
Area, P sides space layer, p-type limiting layer, p-type current extending；
B, P faces reflective ohmic contact layer, P faces diffusion barrier metal layer and epitaxial-side metal are prepared in p-type current expansion layer surface
Bonded layer；
C, substrate-side metal bonding layer and P electrode are prepared respectively in the obverse and reverse of electrically-conductive backing plate；
D, the epitaxial-side metal bonding layer is bonded with substrate-side metal bonding layer；
E, the gallium arsenide substrate, GaAs buffer layer, corrosion barrier layer are removed, to expose N-type ohmic contact layer；
F, N electrode is formed in N-type Ohmic contact layer surface；
G, the N-type ohmic contact layer other than N electrode is removed, exposes N-type roughened layer, and be roughened；
H, the epitaxial material between removal adjacent chips on Cutting Road, and cutting operation is carried out, prepare finished chip.
The P faces reflective ohmic contact layer that the present invention uses, is provided simultaneously with light reflection and Ohmic contact function, because without system
Standby P electrode through-hole, it is simple for process；N electrode is prepared on the N-type ohmic contact layer of non-roughening, can improve distinguishing for electrode pad
The property known；It, can by optimizing the spacing distance of block and the width of N electrode simultaneously by the blocking of P faces reflective ohmic contact layer
To inhibit N electrode corresponding region electric current injection concentration problem, N electrode occlusion effect is effectively reduced.
Therefore, the present invention has the advantages that effectively improve electro-optical efficiency, of simple structure and low cost.
Description of the drawings
Fig. 1 is the structure diagram of known typical thin film type AlGaInP light-emitting diode chip for backlight unit；
Fig. 2 is the structure diagram of film-type AlGaInP LED epitaxial materials；
Fig. 3 is the structure diagram of film-type AlGaInP light-emitting diode chip for backlight unit prepared by the present invention；
Description of symbols in attached drawing：
In Fig. 1：It is bonded substrate 100,101：Reflective metals conductive layer, 102：Dielectric layer, 103：P faces contact electrode, 105：P-type electricity
Stream extension layer, 106：P-type limiting layer, 107：P sides space layer, 108：Multiple quantum-well light-emitting area, 109：N sides space layer, 110：N-type
Limiting layer, 111：N-type roughened layer, 112：N-type ohmic contact layer, 113：N electrode, 114：P electrode；
In Fig. 2：200：Gallium arsenide substrate, 205：P-type current extending, 206：P-type limiting layer, 207：P sides space layer, 208：It is more
Quantum well radiation area, 209：N sides space layer, 210：N-type limiting layer, 211：N-type roughened layer, 212：N-type ohmic contact layer, 288：
GaAs buffer layer, 299：Corrosion barrier layer；
In Fig. 3：300：Bonding substrate, 301：Substrate-side metal bonding layer, 302：Epitaxial material side metal bonding layer, 303：Diffusion
Barrier metal layer, 304：P faces reflective ohmic contact layer, 305：P-type current extending, 306：P-type limiting layer, 307：P sides space
Layer, 308：Multiple quantum-well light-emitting area, 309：N sides space layer, 310：N-type limiting layer, 311：N-type roughened layer, 312：N-type ohm connects
Contact layer, 313：N electrode, 314：P electrode, a:N electrode width, b:P faces reflective ohmic contact layer block spacing.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Shown in Fig. 3, a kind of film-type AlGaInP light-emitting diode chip for backlight unit, including：Bonding substrate 300 with positive and negative；
It is up followed successively by from the front of bonding substrate 300：Substrate-side metal bonding layer 301, epitaxial material side metal bonding layer 302, P faces
Diffusion barrier metal layer 303 and P faces reflective ohmic contact layer 304, P faces reflective ohmic contact layer 304 are Ag Ni/Ag laminations
Structure forms good Ohmic contact with p-type current extending 305, is provided simultaneously with light reflection and Ohmic contact function；From P faces
P-type current extending 305, p-type limiting layer 306, P sides space layer 307, multiple quantum wells are followed successively by reflective ohmic contact layer 304
Luminous zone 308, N sides space layer 309, N-type limiting layer 310, N-type roughened layer 311, N-type ohmic contact layer 312 and N electrode 313；
The reverse side for being bonded substrate is P electrode 314.
The material of substrate-side metal bonding layer and epitaxial material side metal bonding layer be Sn, In, Ag, Au one of which or
It is a variety of.
The material of P faces diffusion barrier metal layer is Cr, Ti, Pt, Au, Ni, Wu, Cu one of which or metal alloy TiW,
FeNiCr, FeCoCr one of which.
The material for being bonded substrate 300 is Si, Ge, GaAs, GaP, Cu, Mo, C one or more of which.
The Ni/Ag metals that P faces reflective ohmic contact layer 304 uses be lamination, thickness be respectively 0.1 ~ 1nm/100 ~
300nm。
N-type roughened layer 311 immediately below N electrode 313 is plane, sharp above the N-type ohmic contact layer 312 of non-roughening
Prepare N electrode 313 with Au/Ge/Ni laminated construction, the center of N electrode 313 in 304 spacer region of P faces reflective ohmic contact layer
The heart corresponds to, and the width a of N electrode 313 is less than the spacing b of corresponding P faces reflective ohmic contact layer 304, and meets a=x*b, x=0.7
~0.9（A, the unit of b is μm）, by the blocking of P faces reflective ohmic contact layer, by optimizing the spacing distance of block and N electricity
The width of pole can inhibit N electrode corresponding region electric current injection concentration problem, effectively reduce N faces electrode occlusion effect.
The width a of N electrode 313 can be optimized and revised according to chip size, be normally controlled between 1 ~ 20 μm.
P faces reflective ohmic contact layer 304 has good luminous reflectanc, and is Europe between p-type current extending 305
Nurse contacts, and is non-ohmic contact between P faces diffusion barrier metal layer 303 and p-type current extending 305.
The present invention also provides a kind of preparation method of film-type AlGaInP light-emitting diode chip for backlight unit, specific steps packets
It includes：
（1）, in gallium arsenide substrate 200 grow epitaxial material：
The structures of film-type AlGaInP LED epitaxial materials as shown in Fig. 2, including：200：Gallium arsenide substrate, 205：P
Type current extending, 206：P-type limiting layer, 207：P sides space layer, 208：Multiple quantum-well light-emitting area, 209：N sides space layer,
210：N-type limiting layer, 211：N-type roughened layer, 212：N-type ohmic contact layer, 288：GaAs buffer layer, 299：Corrosion blocking
Layer grows GaAs buffer layer 288, corrosion barrier layer 299, N-type ohmic contact layer 212, N-type in N-type gallium arsenide substrate 200
Roughened layer 211, N-type limiting layer 210, N sides space layer 209, multiple quantum-well light-emitting area 208, P sides space layer 207, p-type limiting layer
206th, p-type current extending 205；AlGaInP film LEDs epitaxial material is prepared using metal organic chemical vapor deposition technology,
The raw material that group iii elements use include trimethyl gallium, trimethyl indium, trimethyl aluminium, and the raw material that group-v element uses include arsenic
Alkane, phosphine, n-type doping use silane or double silane, and p-type doping uses two luxuriant magnesium；By by above-mentioned raw material vapor mode into
Enter 500 ~ 850 DEG C of reative cell heated each layers of successively epitaxial growth in N-type gallium arsenide substrate, component and doping are by controlling not
Enter the flow of reative cell with element to regulate and control；
（2）, cleaning epitaxial material：
Film-type AlGaInP LED epitaxial materials are used into sulfuric acid:Hydrogen peroxide:Water=1:1:Corrode 1--2 in 4 corrosive liquids
Minute, it is then rinsed 10 minutes with deionized water, then 5 minutes ultrasonic with alcohol, is dried with dryer；
（3）, prepare P faces reflective ohmic contact layer 304：
A, evaporation of metal：The film-type AlGaInP light-emitting diode chip for backlight unit materials cleaned up are put into electron beam evaporation platform, are taken out
Vacuum is to less than 5E-4Pa, 100 ± 10 DEG C are toasted 20 minutes, are cooled to 80 ± 10 DEG C of evaporation Ni/Ag metal P faces reflective ohmics and are connect
Contact layer 304, the thickness of the Ni/Ag metals is respectively 0.1 ~ 1nm/100 ~ 300nm；
B, photoetching：Whirl coating on film-type AlGaInP LED epitaxial materials after evaporation of metal, 80 DEG C are dried 15 minutes,
Then it exposes, develop, then 100 DEG C of post bakes 20 minutes；
C, corrode：Use ammonium hydroxide:Hydrogen peroxide:Water=30:1:1 corrosion corrosion Ag metal layers, etching time are 1 ~ 3 minute, bath 5 ~
10 minutes, then use hydrochloric acid：Water=1:1 corrosion corrosion Ni adhesion layers, etching time are 1 ~ 2 minute, are washed by water 5 ~ 10 minutes；
D, it removes photoresist：It with acetone and alcohol successively ultrasound 5 minutes, is then rinsed 10 minutes with deionized water, is dried with dryer, made
Get P faces reflective ohmic contact layer 304 ready；
E, it anneals：The wafer for preparing P faces reflective ohmic contact layer 304 is put into alloying furnace, in N2It is carried out at annealing under protection
Reason, annealing temperature are 300 ~ 500 DEG C, and the annealing high temperature section time is 20 ~ 60 seconds；
（4）, prepare P faces diffusion barrier metal layer 303：
Wafer after annealing is put into electron beam evaporation platform, is evacuated to less than 5E-4Pa, 130 ± 20 DEG C are toasted 20 minutes,
Keep 130 ± 10 DEG C of evaporation conductive metal layers, conductive metal layer selection Ag, Au, Pt metallic combination, overall thickness for 500 ~
2000nm obtains P faces diffusion barrier metal layer 303, metal and the p-type current extending of the P faces diffusion barrier metal layer 303
It is non-ohmic contact between 305, and has good luminous reflectanc；
（5）, prepare epitaxial material side metal bonding layer 302：
The wafer for preparing P faces diffusion barrier metal layer 303 is put into electron beam evaporation platform, is evacuated to less than 5E-4Pa,
130 ± 20 DEG C are toasted 20 minutes, keep 130 ± 10 DEG C of evaporated metal bonded layers, the metal bonding layer selection Ni/Au, Ti/Au's
Metallic combination, overall thickness are 1000 ~ 2000nm, obtain epitaxial material side metal bonding layer 302；
（6）, prepare substrate-side metal bonding layer 301
Bonding substrate 300 is cleaned up, is then placed in electron beam evaporation platform, is evacuated to less than 5E-4Pa, 130 ± 20 DEG C
Baking 20 minutes keeps 130 ± 10 DEG C of evaporation substrate-side metal bonding layers 301, the substrate-side metal bonding layer 301 selection Ni/
Au, Ti/Au stack combinations, overall thickness are 1000 ~ 3000nm；Bonding substrate 300 selects conductive silicon or germanium material；
（7）, bonding chip：
Bonding chip uses Au-Au or Au-In bonding methods：
When a. using Au-Au bondings, by step（5）The epitaxial material side gold of the film-type AlGaInP LED epitaxial materials of preparation
Belong to bonded layer 302 and step（6）The substrate-side metal bonding layer 301 of the bonding substrate 300 of preparation is opposite, and is put into bonding chip
Epitaxial material side metal bonding layer 302 and substrate-side metal bonding layer 301 are bonded in one by machine by applying pressure and temperature
It rises；
When b. using Au-In bondings, in step（6）Preparation bonding substrate 300 substrate-side metal bonding layer 301 on evaporation 1 ~
3 microns of In, then by step（5）The epitaxial material side metal bonding layer of the film-type AlGaInP LED epitaxial materials of preparation
302 and step（6）The substrate-side metal bonding layer 301 of the bonding substrate 300 of preparation is opposite, and is put into bonding chip machine, passes through
Apply pressure and temperature epitaxial material side metal bonding layer 302 and substrate-side metal bonding layer 301 are bonded together；；
（8）, substrate removal：
By step（7）The middle wafer being bonded is put into ammonium hydroxide and hydrogen peroxide mixed solution, and gallium arsenide substrate 200 is removed：
（9）, removal corrosion barrier layer：
Use hydrochloric acid:Water=2:3 corrosive liquid is at room temperature by step（8）Obtained wafer corrodes 2 ~ 6 minutes, by corrosion barrier layer
299 removals：
（10）, prepare N electrode 313：
A, photoetching：
Negative photoresist is got rid of, is dried at 80 DEG C 15 minutes, then exposes, develop, then post bake 20 minutes at 100 DEG C, it is desirable that N electrode
313 center is corresponding with the center of 304 spacer region of P faces reflective ohmic contact layer, and the width a of N electrode 313 is reflected less than P faces
The spacing b of ohmic contact layer, and meet a=x*b, x=0.7 ~ 0.9（A, the unit of b is μm）；
B, evaporation of metal：
By this step（A）The wafer that photoetching is completed is put into electron beam evaporation platform, is evacuated to less than 5E-4Pa, 110 ± 20 DEG C
Baking 20 minutes, is cooled to 80 ± 10 DEG C, and N-type electrode metal, metal selection are evaporated on N-type GaAs ohmic contact layer 312
Ni/Au/Ge/Ni/Au, Ni/AuGe, Au/Ni/AuGe/Ni/Au lamination metal combine；
C, it removes：
Then acetone soak 5 ~ 10 minutes is fallen the metal-stripping other than N electrode 313 with tearing golden machine；
D, it removes photoresist：
With acetone and alcohol successively ultrasound 5 minutes, then rinsed 10 minutes with deionized water, dried with dryer；
E, it anneals：
The wafer for preparing N electrode 313 is put into alloying furnace, in N2It is made annealing treatment under protection, annealing temperature is 300 ~ 500
DEG C, the time is 20 ~ 60 seconds；
（11）, N faces roughening：
N electrode 313 is protected with photoresist, then hydrogen peroxide is added to remove N electrode 313 with exterior domain with dilute sulfuric acid or phosphoric acid,diluted
N-type ohmic contact layer 312, then use hydrochloric acid:Water=y:3（1<y<3）Corrosive liquid is at 30 ± 2 DEG C to exposed N-type roughened layer 311
Corrosion 2 ~ 4 minutes obtains the light-emitting surface of roughening；
（12）, fluting：
The material corrosion of Cutting Road corresponding region is fallen with bromic acid or acid iodide system corrosive liquid, in order to which chip cutting below is made
Industry；
（13）, passivation：
N faces electrode district is protected with photoresist, in region, vapor deposition transparent insulating medium layer is passivated, and dielectric passivation uses dioxy
SiClx or silicon nitride；
（14）, be thinned：
It is carried out back thinning using grinding, polishing process para-linkage substrate 300, obtains the crystalline substance that thickness is 180 ± 30 micron ranges
Circle, in order to chip cutting；
（15）, prepare P electrode 314：
By step（14）The wafer of completion is put into electron beam evaporation platform, is evacuated to less than 5E-4Pa, 130 ± 20 DEG C of bakings 20
Minute, P electrode metal then is evaporated in the bottom surface of bonding substrate 300, P electrode metal uses Ni/Au, Ti/Au or Cr/Au lamination
Metallic combination, overall thickness are 500 ~ 2000nm；It should be noted that substrate-side metallic bond can also prepared by preparing P electrode 314
It is carried out after closing layer 301；
（16）, cutting：
Chip is cut using the Cutting Road of grinding wheel or laser along chip surrounding, is detached, prepares the thin of structure shown in Fig. 3
Membranous type AlGaInP light-emitting diode chip for backlight unit.
Claims (8)
1. a kind of film-type AlGaInP light-emitting diode chip for backlight unit, including：Bonding substrate with positive and negative；It is characterized in that：From
Bonding substrate front side is up followed successively by：Substrate-side metal bonding layer, epitaxial-side metal bonding layer, P faces diffusion barrier metal layer, P
Face reflective ohmic contact layer；From P faces, reflective ohmic contact layer is up followed successively by p-type current extending, p-type limiting layer, P sides space
Layer, multiple quantum-well light-emitting area, N sides space layer, N-type limiting layer, N-type roughened layer, N-type ohmic contact layer, N electrode；It is bonded substrate
Reverse side be P electrode；P faces reflective ohmic contact layer is Ag Ni/Ag laminated metal structures, is formed with p-type current extending
Good Ohmic contact is provided simultaneously with light reflection and Ohmic contact function.
2. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：In the N-type of non-roughening
N electrode is prepared above ohmic contact layer, N electrode is Au/Ge/Ni laminated construction；Each N electrode face position is reflected for P faces
The spacer region of ohmic contact layer, and the center of N electrode is corresponding with the center of P faces reflective ohmic contact layer, the width a of N electrode
Less than the spacing b of P faces reflective ohmic contact layer, and meet a=x*b, x=0.7 ~ 0.9.
3. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 2, it is characterised in that：The width a of N electrode
It is 1 ~ 20 μm.
4. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：P faces reflective ohmic connects
The Ni/Ag metals that contact layer uses are lamination, and thickness is respectively 0.1 ~ 1nm and 100 ~ 300nm.
5. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：P faces diffusion barrier gold
It is non-ohmic contact between the region other than the reflective ohmic contact layer of P faces and p-type current extending to belong to layer.
6. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：Substrate-side metallic bond
The material for closing layer and epitaxial material side metal bonding layer is Sn, In, Ag, Au one or more of which.
7. film-type AlGaInP light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：P faces diffusion barrier gold
The material for belonging to layer is Cr, Ti, Pt, Au, Ni, Wu, Cu one of which or metal alloy TiW, FeNiCr, FeCoCr one of which.
8. a kind of preparation method of film-type AlGaInP light-emitting diode chip for backlight unit, specific steps include：
A, the growing film type AlGaInP LED epitaxial materials in gallium arsenide substrate, the epitaxial material include：Arsenic
Change gallium buffer layer, corrosion barrier layer, N-type ohmic contact layer, N-type roughened layer, N-type limiting layer, N sides space layer, multiple quantum wells hair
Light area, P sides space layer, p-type limiting layer, p-type current extending；
B, P faces reflective ohmic contact layer, P faces diffusion barrier metal layer and epitaxial-side metal are prepared in p-type current expansion layer surface
Bonded layer；
C, substrate-side metal bonding layer and P electrode are prepared respectively in the obverse and reverse of electrically-conductive backing plate；
D, the epitaxial-side metal bonding layer is bonded with substrate-side metal bonding layer；
E, the gallium arsenide substrate, GaAs buffer layer, corrosion barrier layer are removed, to expose N-type ohmic contact layer；
F, N electrode is formed in N-type Ohmic contact layer surface；
G, the N-type ohmic contact layer other than N electrode is removed, exposes N-type roughened layer, and be roughened；
H, the epitaxial material between removal adjacent chips on Cutting Road, and cutting operation is carried out, prepare finished chip.
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