CN101853903A - Method for preparing gallium nitride-based light emitting diode with vertical structure - Google Patents
Method for preparing gallium nitride-based light emitting diode with vertical structure Download PDFInfo
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- CN101853903A CN101853903A CN200910081093A CN200910081093A CN101853903A CN 101853903 A CN101853903 A CN 101853903A CN 200910081093 A CN200910081093 A CN 200910081093A CN 200910081093 A CN200910081093 A CN 200910081093A CN 101853903 A CN101853903 A CN 101853903A
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Abstract
The invention discloses a method for preparing a gallium nitride-based light emitting diode with a vertical structure. The method comprises the following steps of: preparing a light emitting diode with the vertical structure by a selective alloy electroplating method; filling a track on a P-type gallium nitride surface by using a photoresist material; preparing a nickel-tungsten alloy support substrate by using a selective electroplating process; and peeling off a sapphire substrate by using laser to obtain the light emitting diode with the vertical structure. In the method, a support substrate in the light emitting diode with the vertical structure is prepared by using a nickel-tungsten alloy electroplating method, so that the influence on the electrical performance and the optical performance of the light emitting diode caused by the poor electrical conductibility and the poor heat dispersion of the sapphire substrate is changed; and the difference between thermal mismatches of a substrate and gallium nitride is reduced at the same time.
Description
Technical field
The present invention relates to semiconductor photoelectronic device manufacturing technology field, be specifically related to the method that a kind of employing selectivity alloy electro-plating method prepares gallium nitride-based light emitting diode with vertical structure (VE-LED).
Background technology
Light-emitting diode is as the solid-state illumination light source, advantage such as have that photoelectric conversion efficiency height, environmental protection, life-span are long, response speed is fast, rich color, total solidsization, volume are little is another revolution continue Edison's invention incandescent lamp after on the human illumination history.Though it is the luminous efficiency of gallium nitrate based power type light-emitting diode had obtained raising to a great extent in recent years, also far apart with the requirement that substitutes conventional light source fully.At present, quantum efficiency, CURRENT DISTRIBUTION uniformity and device heat-sinking capability have become the major technique bottleneck that restriction light-emitting diode performance further improves.
The light emitting diode with vertical structure technology solved that gallium nitride based light emitting diode on traditional Sapphire Substrate exists such as heat radiation, electric current is assembled and the low a series of problems of light extraction efficiency, be to remove above-mentioned illumination to use one of the most potential technology of obstacle, become the focus of gallium nitride based light emitting diode area research in recent years.With the conventional planar structure relatively, gallium nitride based LED with vertical structure has the CURRENT DISTRIBUTION high conformity, active area utilance height, advantage such as current density is little, and series resistance is little; In addition, by adopting the low thermal resistance backing material, it is more efficient to make vertical stratification and traditional structure light-emitting diode chip for backlight unit compare heat radiation, thereby has increased device maximum operating currenbt and saturation output power.
Use electronickelling tungsten alloy in the vertical stratification has improved chip poor heat radiation on traditional Sapphire Substrate as novel support substrates, and the thermal mismatching degree is bigger between Sapphire Substrate and the gallium nitride, a series of problems such as Sapphire Substrate poor electric conductivity.
When making gallium nitrate based power-type light emitting diode with vertical structure, adopt thick glue as masking layer, method with the ICP dry etching forms table top then, and thick glue masking layer has reduced the size of ICP dry etching process to the electric leakage of the damage of luminescent active region and device.Photoresist is filled the introducing of runway, and the active area of having avoided exposing in the laser lift-off process causes the hidden danger of device short circuit.P, N electrode branch occupy gallium nitrate based both sides, is different from P, and the N electrode is positioned at traditional LED device of gallium nitride substrate homonymy, has solved the problem of current expansion inequality effectively.In the gallium nitride substrate of LED device, electronickelling tungsten alloy substrate can improve the heat radiation and the electric conductivity of light-emitting diode, reduced the difference of the thermal mismatching degree between substrate and the gallium nitride, avoided in the bonding technology temperature and pressure simultaneously the influence of substrate.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is to be to provide a kind of method that adopts selectivity alloy electro-plating method to prepare gallium nitride-based light emitting diode with vertical structure, with the support substrates in the preparation light emitting diode with vertical structure, change the influence of relatively poor conduction of Sapphire Substrate and heat dispersion, reduce the difference of the thermal mismatching degree between substrate and the gallium nitride light-emitting diode electricity and optical property.
(2) technical scheme
For achieving the above object, the invention provides a kind of method for preparing gallium nitride-based light emitting diode with vertical structure, this method comprises:
Step 1: epitaxial growth N-GaN layer 2, active layer 3 and P-GaN layer 4 successively on Sapphire Substrate 1;
Step 2: coating one deck photoresist forms masking layer 5 on P-GaN layer 4, and this masking layer 5 of photoetching forms the table top blasnket area, exposes the part upper surface 6 of P-GaN layer 4;
Step 3: this upper surface 6 of etching forms table top 7 until the upper surface of Sapphire Substrate 1;
Step 4: remove remaining masking layer 5 and form the gallium nitride substrate, and this gallium nitride substrate is cleaned;
Step 5: the gallium nitride substrate surface deposition one deck passivation layer 8 after cleaning, photoetching forms P electrode zone 10;
Step 6: at the gallium nitride substrate surface evaporation nickel/ruthenium that forms P electrode zone 10, the row metal of going forward side by side is peeled off and alloy, forms transparency electrode nickel/ruthenium 11;
Step 7: photoetching corrosion goes out P type thickening electrode zone 13, and evaporated metal is also removed photoresist, forms the electrode chromium/silver/gold 14 of thickening;
Step 8: in runway, fill photoresist 15, at the electroplating nickel on surface/tungsten alloy of P type gallium nitride 4, form nickel tungsten support substrates 16 then;
Step 9: Sapphire Substrate is peeled off from the gallium nitride substrate, obtained the light emitting diode with vertical structure substrate of nickel tungsten support substrates;
Step 10: in the back side photoetching of the light emitting diode with vertical structure substrate of the nickel tungsten support substrates that obtains with erode away N electrode zone 18, the evaporated metal row metal of going forward side by side is peeled off, and forms N electrode chromium/silver/gold 19.
In the such scheme, described in the step 2 on P-GaN layer 4 coating one deck photoresist, coating be a bed thickness glue, its thickness is at least 50 microns.
In the such scheme, exposing the part upper surface 6 of P-GaN layer 4 described in the step 2, is the parts of P-GaN layer 4 upper surface near periphery.
In the such scheme, alloy described in the step 6 specifically comprises: the gallium nitride substrate of surface evaporation nickel/ruthenium is put into annealing furnace carry out alloy, the alloy atmosphere is a nitrogen: oxygen=2: 1 (volume ratio), temperature are 500 degrees centigrade.
In the such scheme, in runway, fill photoresist 15 described in the step 8 and adopt photolithographicallpatterned to realize.
In the such scheme, electroplate described in the step 8, specifically comprise: the gallium nitride substrate that will fill photoresist 15 in runway is in nickel tungsten alloy electroplating liquid, with current density 500mA, the condition that temperature is 80 ℃ is electroplated, and electroplates after 24 hours, forms nickel tungsten support substrates 16.
In the such scheme, described in the step 9 Sapphire Substrate is peeled off from the gallium nitride substrate, adopted KrF laser lift-off equipment to realize.
In the such scheme, etching described in this method adopts the inductively coupled plasma lithographic method to realize.
In the such scheme, evaporate described in this method, adopt electron beam evaporation method to realize.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this employing selectivity alloy electro-plating method provided by the invention prepares the method for gallium nitride-based light emitting diode with vertical structure, the method of use electronickelling tungsten alloy prepares the support substrates in the light emitting diode with vertical structure, thereby changed the influence of relatively poor conduction of Sapphire Substrate and heat dispersion, reduced the difference of thermal mismatching degree between substrate and the gallium nitride simultaneously light-emitting diode electricity and optical property.
2, this employing selectivity alloy electro-plating method provided by the invention prepares the method for gallium nitride-based light emitting diode with vertical structure, use photoresist to fill runway, the active area section of having avoided exposing in the laser lift-off process forms leak channel, causes the hidden danger of device short circuit.
3, this employing selectivity alloy electro-plating method provided by the invention prepares the method for gallium nitride-based light emitting diode with vertical structure, use thick glue as masking layer, carry out the inductively coupled plasma etching, reduce the damage of etching, and reduced the electric leakage of device for gallium nitride substrate active area.
4, this employing selectivity alloy electro-plating method provided by the invention prepares the method for gallium nitride-based light emitting diode with vertical structure, use alloy electroplating method to prepare the support substrates of nickel tungsten as light emitting diode with vertical structure, optimized the heat radiation and the electric conductivity of substrate in the light-emitting diode, reduced the difference of the thermal mismatching degree between substrate and the gallium nitride, avoided in the bonding technology temperature and pressure simultaneously the influence of substrate;
Description of drawings
For further instruction content of the present invention, below in conjunction with concrete execution mode the present invention is explained in detail, wherein:
Fig. 1 is the method flow diagram of preparation gallium nitride-based light emitting diode with vertical structure provided by the invention;
Fig. 2 is a GaN based power type LED epitaxial material structure generalized section, adopts the method for extension to form N-GaN layer 2, active layer 3 and P-GaN layer 4 on Sapphire Substrate 1;
Fig. 3 is the schematic diagram that is coated with a bed thickness glue masking layer 5 on Fig. 1;
Fig. 4 makes the table top blasnket area by lithography on the basis of Fig. 3, erode thick glue masking layer 5, exposes the schematic diagram of the P-GaN upper surface 6 of wanting etching;
Fig. 5 be on the basis of Fig. 4 the ICP dry etching after, the schematic diagram of the table top 7 of formation;
Fig. 6 is the schematic diagram of removing on the basis of Fig. 5 behind the remaining wall glue masking layer 5;
Fig. 7 is deposition one deck passivation layer 8 schematic diagrames on the basis of Fig. 6;
Fig. 8 is the shape that makes the P-GaN transparency electrode on the basis of Fig. 7 by lithography, erodes passivation layer 8 and photoresist 9, exposes the schematic diagram of the P-GaN region upper surface 10 of wanting etching;
Fig. 9 is electron beam evaporation transparency electrode metallic nickel/ruthenium 11 on the basis of Fig. 8, the schematic diagram behind the stripping photoresist 9;
Figure 10 makes the shape that P adds thick electrode by lithography on the basis of Fig. 9, wet etching photoresist 12 exposes the schematic diagram of P transparency electrode region upper surface 13;
Figure 11 is electron beam evaporation thickening electrode metal chromium/silver/gold 14 on the basis of Figure 10, the schematic diagram behind the stripping photoresist 12;
Figure 12 is the schematic diagram that utilizes photoresist 15 is filled in photoetching in runway after;
Figure 13 is the schematic diagram of electronickelling/tungsten alloy 16 on the basis of Figure 12;
Figure 14 is the schematic diagram after laser lift-off gallium nitride substrate Figure 12 Sapphire Substrate;
Figure 15 is the shape that makes the N electrode on the basis of Figure 14 by lithography, and corrosion photoresist 17 exposes the schematic diagram of the N-GaN face 18 of wanting etching;
Figure 16 is electron beam evaporation N electrode metal chromium/silver/gold 19, the schematic diagram after peeling off.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram of preparation gallium nitride-based light emitting diode with vertical structure provided by the invention, and this method comprises:
Step 1: epitaxial growth N-GaN layer 2, active layer 3 and P-GaN layer 4 successively on Sapphire Substrate 1;
Step 2: coating one deck photoresist forms masking layer 5 on P-GaN layer 4, and this masking layer 5 of photoetching forms the table top blasnket area, exposes the part upper surface 6 of P-GaN layer 4;
Step 3: this upper surface 6 of etching forms table top 7 until the upper surface of Sapphire Substrate 1;
Step 4: remove remaining masking layer 5 and form the gallium nitride substrate, and this gallium nitride substrate is cleaned;
Step 5: the gallium nitride substrate surface deposition one deck passivation layer 8 after cleaning, photoetching forms P electrode zone 10;
Step 6: at the gallium nitride substrate surface evaporation nickel/ruthenium that forms P electrode zone 10, the row metal of going forward side by side is peeled off and alloy, forms transparency electrode nickel/ruthenium 11;
Step 7: photoetching corrosion goes out P type thickening electrode zone 13, and evaporated metal is also removed photoresist, forms the electrode chromium/silver/gold 14 of thickening;
Step 8: in runway, fill photoresist 15, at the electroplating nickel on surface/tungsten alloy of P type gallium nitride 4, form nickel tungsten support substrates 16 then;
Step 9: Sapphire Substrate is peeled off from the gallium nitride substrate, obtained the light emitting diode with vertical structure substrate of nickel tungsten support substrates;
Step 10: in the back side photoetching of the light emitting diode with vertical structure substrate of the nickel tungsten support substrates that obtains with erode away N electrode zone 18, the evaporated metal row metal of going forward side by side is peeled off, and forms N electrode chromium/silver/gold 19.
Fig. 2 to Figure 16 shows the process chart for preparing gallium nitride-based light emitting diode with vertical structure according to the embodiment of the invention.
Selectivity alloy electro-plating method prepares gallium nitride-based light emitting diode with vertical structure, and the process of its making generally is to adopt the method for extension to form N-GaN layer 2, active layer 3 and P-GaN layer 4 on Sapphire Substrate 1, as shown in Figure 2.
On the material structure P-GaN 4 of the GaN of Sapphire Substrate extension based power type LED, use thick glue to form masking layer 5, as shown in Figure 3.This method can effectively reduce active area 3 damages in the ICP dry etching process.Make the table top blasnket area by lithography, erode masking layer, expose the Al that needs etching
2O
3Region upper surface 6, as shown in Figure 4.Utilize the ICP dry etching, be etched to Al
2O
3, form table top 7, as shown in Figure 5.Remove the forward masking layer, the GaN substrate after the ICP etching is cleaned, as shown in Figure 6.At the GaN substrate surface deposition one deck passivation layer 8 through ICP etching and cleaning, as shown in Figure 7, this passivation layer has high compactness and insulating properties, can stop at the active area section that exposes to form leak channel.Make the P electrode zone 10 of optimal design by lithography, as shown in Figure 8; Electron beam evaporation transparency electrode nickel/ruthenium 11, metal-stripping, as shown in Figure 9.To finish the GaN substrate of transparency electrode nickel/ruthenium 11 at alloy atmosphere N
2: O
2=2: 1, temperature is to carry out alloy in 500 ℃ the annealing furnace, obtains metal electrode nickel/ruthenium 11 and p-GaN layer 4 excellent contact resistance, and improves adhesive force at the interface; With photoetching and wet etching, erode away the P thickening electrode zone 13 of optimal design, as shown in figure 10.Electron beam evaporation adds thick electrode chromium/silver/gold 14, removes photoresist then, as shown in figure 11.Utilize photoetching, in runway, fill photoresist 15, as shown in figure 12.With current density 500mA, electroplate by the condition that temperature is 80 ℃ in nickel tungsten alloy electroplating liquid for the GaN substrate that will fill photoresist in runway, electroplates after 24 hours, forms nickel tungsten support substrates 16, as shown in figure 13.Use laser lift-off equipment, Sapphire Substrate 1 is peeled off from the GaN substrate, obtain the light emitting diode with vertical structure substrate of nickel tungsten support substrates, as shown in figure 14.Go out the N electrode zone 18 of optimal design with photoetching and wet etching, as shown in figure 15; Electron beam evaporation N electrode chromium/silver/gold 19, stripping electrode, as shown in figure 16.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a method for preparing gallium nitride-based light emitting diode with vertical structure is characterized in that, this method comprises:
Step 1: epitaxial growth N-GaN layer (2), active layer (3) and P-GaN layer (4) successively on Sapphire Substrate (1);
Step 2: go up coating one deck photoresist at P-GaN layer (4) and form masking layer (5), this masking layer of photoetching (5) forms the table top blasnket area, exposes the part upper surface (6) of P-GaN layer (4);
Step 3: this upper surface of etching (6) forms table top (7) until the upper surface of Sapphire Substrate (1);
Step 4: remove remaining masking layer (5) and form the gallium nitride substrate, and this gallium nitride substrate is cleaned;
Step 5: the gallium nitride substrate surface deposition one deck passivation layer (8) after cleaning, photoetching forms P electrode zone (10);
Step 6: at the gallium nitride substrate surface evaporation nickel/ruthenium that forms P electrode zone (10), the row metal of going forward side by side is peeled off and alloy, forms transparency electrode nickel/ruthenium (11);
Step 7: photoetching corrosion goes out P type thickening electrode zone (13), and evaporated metal is also removed photoresist, forms the electrode chromium/silver/gold (14) of thickening;
Step 8: in runway, fill photoresist (15), at the electroplating nickel on surface/tungsten alloy of P type gallium nitride (4), form nickel tungsten support substrates (16) then;
Step 9: Sapphire Substrate is peeled off from the gallium nitride substrate, obtained the light emitting diode with vertical structure substrate of nickel tungsten support substrates;
Step 10: in the back side photoetching of the light emitting diode with vertical structure substrate of the nickel tungsten support substrates that obtains with erode away N electrode zone (18), the evaporated metal row metal of going forward side by side is peeled off, and forms N electrode chromium/silver/gold (19).
2. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, goes up coating one deck photoresist at P-GaN layer (4) described in the step 2, coating be a bed thickness glue, its thickness is at least 50 microns.
3. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, exposes the part upper surface (6) of P-GaN layer (4) described in the step 2, is the part of P-GaN layer (4) upper surface near periphery.
4. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, alloy described in the step 6 specifically comprises:
The gallium nitride substrate of surface evaporation nickel/ruthenium is put into annealing furnace carry out alloy, the alloy atmosphere is a nitrogen: oxygen=2: 1 (volume ratio), temperature are 500 degrees centigrade.
5. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, fills photoresist (15) described in the step 8 and adopt photolithographicallpatterned to realize in runway.
6. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, electroplates described in the step 8, specifically comprises:
The gallium nitride substrate that to fill photoresist (15) in runway is in nickel tungsten alloy electroplating liquid, and with current density 500mA, the condition that temperature is 80 ℃ is electroplated, and electroplates after 24 hours, forms nickel tungsten support substrates (16).
7. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, described in the step 9 Sapphire Substrate is peeled off from the gallium nitride substrate, adopts KrF laser lift-off equipment to realize.
8. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, etching described in this method adopts the inductively coupled plasma lithographic method to realize.
9. the method for preparing gallium nitride-based light emitting diode with vertical structure according to claim 1 is characterized in that, evaporates described in this method, adopts electron beam evaporation method to realize.
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| CN102064242A (en) * | 2010-11-03 | 2011-05-18 | 中国科学院半导体研究所 | Method for manufacturing high-extraction efficiency gallium nitride light-emitting diode |
| CN102185094A (en) * | 2011-04-08 | 2011-09-14 | 同辉电子科技股份有限公司 | Gallium nitride base composite metal base plate for light-emitting diode (LED) |
| CN102185046A (en) * | 2011-04-08 | 2011-09-14 | 同辉电子科技股份有限公司 | Method for manufacturing gallium nitride-based LED (Light Emitting Diode) with vertical structure |
| CN102194938A (en) * | 2011-05-06 | 2011-09-21 | 鄂尔多斯市荣泰光电科技有限责任公司 | Epitaxial wafer structure of blue light-emitting diode (LED) and manufacturing process thereof |
| CN102255013A (en) * | 2011-08-01 | 2011-11-23 | 华灿光电股份有限公司 | Method for making light-emitting diode with vertical structure through stripping GaN based epitaxial layer and sapphire substrate by using wet process |
| CN102369604A (en) * | 2011-02-22 | 2012-03-07 | 香港应用科技研究院有限公司 | Vertical light-emitting diode structure and manufacturing method thereof |
| WO2012113205A1 (en) * | 2011-02-22 | 2012-08-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd | Vertical light emitting diode device structure and method of fabricating the same |
| CN102709427A (en) * | 2011-03-28 | 2012-10-03 | 同方光电科技有限公司 | Vertical-structured light emitting diode (LED) and manufacturing method thereof |
| CN102738314A (en) * | 2011-04-13 | 2012-10-17 | 同方光电科技有限公司 | Device for light emitting diode substrate separation |
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| CN102064242A (en) * | 2010-11-03 | 2011-05-18 | 中国科学院半导体研究所 | Method for manufacturing high-extraction efficiency gallium nitride light-emitting diode |
| CN102064242B (en) * | 2010-11-03 | 2012-08-15 | 中国科学院半导体研究所 | Method for manufacturing high-extraction efficiency gallium nitride light-emitting diode |
| CN102369604B (en) * | 2011-02-22 | 2013-09-04 | 香港应用科技研究院有限公司 | Vertical light-emitting diode structure and manufacturing method thereof |
| CN102369604A (en) * | 2011-02-22 | 2012-03-07 | 香港应用科技研究院有限公司 | Vertical light-emitting diode structure and manufacturing method thereof |
| WO2012113205A1 (en) * | 2011-02-22 | 2012-08-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd | Vertical light emitting diode device structure and method of fabricating the same |
| CN102709427A (en) * | 2011-03-28 | 2012-10-03 | 同方光电科技有限公司 | Vertical-structured light emitting diode (LED) and manufacturing method thereof |
| CN102185094A (en) * | 2011-04-08 | 2011-09-14 | 同辉电子科技股份有限公司 | Gallium nitride base composite metal base plate for light-emitting diode (LED) |
| CN102185046A (en) * | 2011-04-08 | 2011-09-14 | 同辉电子科技股份有限公司 | Method for manufacturing gallium nitride-based LED (Light Emitting Diode) with vertical structure |
| CN102738314A (en) * | 2011-04-13 | 2012-10-17 | 同方光电科技有限公司 | Device for light emitting diode substrate separation |
| CN102738314B (en) * | 2011-04-13 | 2014-12-03 | 同方光电科技有限公司 | Device for light emitting diode substrate separation |
| CN102194938B (en) * | 2011-05-06 | 2013-07-31 | 鄂尔多斯市荣泰光电科技有限责任公司 | Manufacturing process of epitaxial wafer structure of blue light-emitting diode (LED) |
| CN102194938A (en) * | 2011-05-06 | 2011-09-21 | 鄂尔多斯市荣泰光电科技有限责任公司 | Epitaxial wafer structure of blue light-emitting diode (LED) and manufacturing process thereof |
| CN102255013A (en) * | 2011-08-01 | 2011-11-23 | 华灿光电股份有限公司 | Method for making light-emitting diode with vertical structure through stripping GaN based epitaxial layer and sapphire substrate by using wet process |
| CN102255013B (en) * | 2011-08-01 | 2013-09-04 | 华灿光电股份有限公司 | Method for making light-emitting diode with vertical structure through stripping GaN based epitaxial layer and sapphire substrate by using wet process |
| CN114122227A (en) * | 2022-01-26 | 2022-03-01 | 山东省科学院激光研究所 | Inverted flexible GaN-based LED and preparation method thereof |
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Application publication date: 20101006 |