CN105353433A - Substrate for mirrors for EUV lithography - Google Patents

Substrate for mirrors for EUV lithography Download PDF

Info

Publication number
CN105353433A
CN105353433A CN201510870929.4A CN201510870929A CN105353433A CN 105353433 A CN105353433 A CN 105353433A CN 201510870929 A CN201510870929 A CN 201510870929A CN 105353433 A CN105353433 A CN 105353433A
Authority
CN
China
Prior art keywords
substrate
base body
alloy
substrate according
catoptron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510870929.4A
Other languages
Chinese (zh)
Other versions
CN105353433B (en
Inventor
C.埃克斯坦
H.马尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN105353433A publication Critical patent/CN105353433A/en
Application granted granted Critical
Publication of CN105353433B publication Critical patent/CN105353433B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Abstract

Substrates which are suitable for mirrors used at wavelengths in the EUV wavelength range are substrates (1) comprising a base body (2).

Description

For the substrate of the catoptron of extreme ultraviolet photolithographic
To be the applying date be on January 14th, 2012 to the application and denomination of invention is the divisional application of the Chinese patent application No.201280006089.1 of " substrate for the catoptron of EUV lithography ".
Technical field
The present invention relates to the substrate of the base body of the catoptron comprised for EUV lithography; And the invention still further relates to the catoptron for EUV projection exposure apparatus comprising this substrate.
Background technology
In order to make it possible to use photoetching method to manufacture meticulousr structure during the manufacture of semiconductor subassembly, such as, utilize the light with shorter wavelength.If be used in the light in extreme ultraviolet (EUV) wavelength coverage, the light of the wavelength such as between about 5nm and 20nm, then no longer can use lenticular element with transmission mode, but alternatively, illumination and projection objective are made up of reflecting element, and this mirror elements has the highly-reflective coating being suitable for relevant work wavelength.With comparing with the catoptron in UV wavelength range as seen, still following situation in theory: each catoptron only can realize the maximum reflectivity being less than 80%.Because EUV grenade instrumentation generally has multiple catoptron, so each that must make these catoptrons has the highest possible reflectivity, to guarantee sufficiently high total reflectivity.
In order to keep the loss of strength that caused by parasitic light low as far as possible, and avoid aberration, mirror substrate or the catoptron manufactured by high reflection layer is applied to mirror substrate should have minimum possible microroughness.From the measurement point surface about central area deviation square mean value calculate root mean square (RMS) roughness, this central area is disposed through surface and makes the summation of the deviation about central area minimum.Especially for the optical element for EUV lithography, the roughness in the spatial frequency range of 0.1 μm to 200 μm is particular importance for the negative effect avoided the optical characteristics of optical element.
Summary of the invention
The object of this invention is to provide a kind of mirror substrate, it is suitable as the substrate of the catoptron that the wavelength place in EUV wavelength range uses.
This object is realized by the substrate (substrate) comprising base body (basebody) for the catoptron of EUV lithography, the feature of this substrate is that described base body is by precipitation hardening alloy, is preferably made up of precipitation-hardening copper or aluminium alloy.
During precipitation-hardening, alloy is heat-treated, to increase the hardening strength of alloy.During heating treatment, with the form of meticulous distribution precipitation metastable phase, them are made to form effective stop of On Dislocation Motion.Therefore, the long-time stability of base body structure or the temperature stability in particular bound can be strengthened further.Usually precipitation-hardening is realized with three steps.In first step (being also called solution annealing), heating alloys is until all elements needed for precipitation all occurs with solution.In order to the distribution that the most probable obtaining mixed phase is pure, should be very high by thermal creep stress, but not high to making the separate constituent of microstructure melt.After solution annealing, quenching can prevent from fusing (fusion) and the precipitation therefore preventing corase particles.Solid solution (solidsolution) remains in single-phase shape that is metastable, supersaturation.By being heated to the temperature lower than solution annealing subsequently, the single phase solid solution of supersaturation changes two phase alloys into.Be mainly cohesive (cohesive) and generally occur with higher proportion be called matrix (matrix) mutually, and another is called precipitation mutually.Because much core (nuclei) is formed at previous quenching, to form and to be uniformly distributed in microstructure and to increase the many little precipitation of structural strength.Advantageously, more remarkable than solution annealing temperature low, be preferably lower than in the temperature of precipitation temperature, use the substrate based on the base body be made up of precipitation hardening alloy and catoptron.
On the other hand, this object is realized by the substrate comprising base body of the catoptron for EUV lithography, the alloy that wherein base body forms (composition) by having is made, and this composition is arranged in the region of being delimited by phase stability line (phasestabilityline) in phasor.The alloy with this composition has the following advantages: any liquate (segregation) process all can be stopped by thermal treatment completely, and therefore described alloy has the elevated temperature strength of increase.This substrate has the long-time stability of enhancing, therefore, it is possible to guarantee that roughness value change is little all as much as possible during the whole mission life of EUV projection exposure apparatus comprising the catoptron based on this substrate.Especially, when catoptron is arranged in beam path rear further (such as in projection system, they are exposed to the place compared with low heat loads), can guarantee that roughness value remains unchanged for a long time.
Preferably, alloy is for having the alloy of replacement lattice (substitutionlattice).When replacement lattice, the alloying component with relatively low concentration is merged in the crystalline network of the composition with maximum concentration, and lattice intensity is strengthened further.When temperature increases and use especially for a long time, which increase structural stability.
Especially preferred, alloy is precipitation-hardening.During precipitation-hardening, alloy is heat-treated, to increase its hardening strength.During heating treatment, metastable phase precipitates in the mode of meticulous distribution, makes them form effective stop of On Dislocation Motion.Therefore, the long-time stability of base body structure or the temperature stability in particular bound can be strengthened further.Usually precipitation-hardening is realized with three steps.In first step (being also called solution annealing), heating alloys is until all elements needed for precipitation all occurs with solution.In order to the distribution that the most probable obtaining mixed phase is pure, should be very high by thermal creep stress, but not high to making the separate constituent of microstructure melt.After solution annealing, quenching can prevent from fusing and therefore prevent the precipitation of coarse particales.Solid solution remains in single-phase state that is metastable, supersaturation.By being heated to the temperature lower than solution annealing subsequently, the single phase solid solution of supersaturation changes two phase alloys into.Mainly cohesive and generally occur with higher proportion be called matrix (matrix) mutually, and another is called precipitation mutually.Because much core is formed at previous quenching, to form and be manyly uniformly distributed in microstructure and strengthen the little precipitation of structural strength.Advantageously, more remarkable than solution annealing temperature low, preferably lower than in the temperature of precipitation temperature, the substrate based on the base body be made up of precipitation hardening alloy and catoptron is used.
In especially preferred embodiment, alloy is aldary or aluminium alloy, and very especially preferred is the aldary of precipitation-hardening.Especially, aldary can be easy to cooled, and it is hereby ensured that working temperature is fully low during EUV lithography, especially when precipitation hardening alloy, thus can prevent structure from changing.In addition, even in the temperature being significantly higher than room temperature, high strength can be obtained when aldary and when aluminium alloy.
On the other hand, realize this object by the substrate comprising base body of the catoptron for EUV lithography, wherein base body is made up of particulate composite (particulatecomposite).Particulate composite also has high strength or structural stability.Therefore, they are also suitable in the mirror substrate of EUV lithography very much, in particular for prolonged application.Particulate composite has dispersion, and it is undissolved in the base.Preferably, dispersion is made up of stupalith, is especially made up of oxide, carbonide, nitride and/or boride.Especially, when dispersion occurs with meticulous distribution mode, dispersion, in the mode similar with the precipitation in precipitation-hardening, forms the stop to the dislocation motion in matrix.
Preferably, particulate composite has the dispersion of spheroid.Therefore, can be reduced in the stress in particulate composite or strain energy of distortion, this can cause higher elevated temperature strength.The dispersion with spheroid form obtains by specific softening annealing process.Such as, the softening annealing process wherein material being remained on one or two hour in a temperature can be carried out, in this temperature, the matrix of particulate composite be stable substantially mutually, but other phases in solution have just started to dissolve.Then, temperature recurrent fluctuations around this temperature range of material, and subsequently slowly by about for cooling per hour for material 10 DEG C to 20 DEG C.This Temperature Treatment can be realized with above-mentioned alloy, make any precipitation all by nodularization, especially when precipitation hardening alloy.
Verified, it is especially favourable that particulate composite has the dispersion of size between 1nm and 20nm.Therefore, particularly preferred intensity can be realized, and the negative effect to microroughness value can be minimized simultaneously.
In a preferred embodiment, particulate composite has metallic matrix, and it is Copper substrate or aluminum substrate especially.In this case, the example of suitable dispersion is titanium carbide, aluminium oxide, silit, monox, or the carbon of graphite or adamas variant form.
In a further preferred embodiment, particulate composite has ceramic matrix, especially silicon or carbon base body.In this case, verified, especially silicon-carbide particle is suitable as dispersion.
On the other hand, realize this object by the substrate comprising base body of the catoptron for EUV lithography, wherein base body is made up of the intermetallic phase of alloy system.
Intermetallic phase is the material with high strength and high melting temperature.Such as, they are for aircraft engine or exhaust-driven turbo-charger exhaust-gas turbo charger.In configuration aspects, the elementary cell of these specific alloys has high Valence Electron Density.Therefore, they have the covalent bond part of the Yan Shigao to metal, and therefore have extra high lattice intensity.Have been found that intermetallic phase all also has high thermal stability except high specific strength (specificstrength) and high temperature of fusion, and low coefficient of diffusion and high creep strength.These characteristics can guarantee even under high thermal load (as being arranged in forward in the light path in EUV projection exposure apparatus further at such as catoptron, occur when in the illuminator of especially EUV projection exposure apparatus), substrate even experiences change little as far as possible in the relatively long-term time, and the characteristic of therefore such as microroughness also remains unchanged as far as possible.
Advantageously, base body is made by wherein observing the intermetallic phase that stoichiometry standard forms.In other words, prioritizing selection comprises the intermetallic phase of the composition with integral indices.Especially preferably there is the intermetallic phase of minimum possible elementary cell.Therefore, the possibility occurring mixed phase along with temperature increase can be reduced further.Owing to there is suitable precipitation (such as at crystal boundary (grainboundary) place), so the mixed phase with the alloy of different structure can cause the increase of microroughness, this can destroy the optical quality of the catoptron comprising this substrate.
In especially preferred embodiment, base body is made up of intermetallic phase, and this intermetallic phase has the composition corresponding with the phase stability line in the phasor of corresponding alloy system.In this article, " phase stability line " is understood to represent phase boundary line, and its temperature axis be parallel in phasor extends.The major advantage that this composition has is: along with the increase of temperature, liquate does not occur.Especially the preferably high intermetallic phase to fusing point without phase transformation on phase stability line.Especially the phase transformation being positioned at the temperature range that can occur between the operating period of EUV projection exposure apparatus is fewer, and phase boundary line is more parallel about temperature axis, then the possibility causing microroughness to be adversely affected under thermal load impact due to the structure change in the base body of substrate is less.
Especially preferred, base body is made by having the alloy formed being arranged in the region of being delimited by phase stability line in phasor.The alloy with this composition has the following advantages: stop any liquate process completely by thermal treatment, and therefore described alloy has the elevated temperature strength of increase.
Advantageously, intermetallic phase has the Bravais lattice (Bravaislattice) identical with its composition on crystal form.Therefore, crystal structure stable especially can be realized, it can reduce structure change further when temperature increases and/or on long-time, makes the roughness value based on the catoptron for EUV lithography of this substrate keep as much as possible being without prejudice during whole mission life.
In especially preferred embodiment, alloy is binary alloy system, preferably utilizes copper as in two compositions, and especially preferred is binary Solder for Al-Cu Joint Welding system.Especially, copper has high thermal conductivity.Therefore, can especially easily cool the substrate comprising the base body with high-copper part, additionally to prevent structure from changing thus during mission life.Based on aluminium, can obtain high-strength material, it has good dimensional stability.It should be noted that, the intermetallic phase of other alloy systems is also suitable for the mirror substrate for EUV lithography.Especially, also can adopt ternary or quaternary alloy system or there is the intermetallic phase of alloy system of five or more compositions.In this article, be to be noted that actual alloy always has trace impurity.Here, only when the phasor of corresponding composition on respective alloy system has appreciable impact, this composition of alloy system is just mentioned.
Generally, verified, in the situation of base body material described here, it is favourable that the material of base body has centroid cubic lattice structure.Therefore, such as, compared with body-centered cubic structure, structural strength can be increased further, and therefore face-centered cubic material is particularly suitable for Long-Time Service, and if properly, is particularly suitable for using at elevated temperatures.
Especially preferred, within the time of 1 year, the change from 20 DEG C to 150 DEG C occurs temperature, the material of base body does not experience the change of microstructure.This temperature range is included in catoptron those temperature for reaching during EUV projection exposure apparatus based on this substrate.Because base body material is only being greater than the change experiencing structure in the temperature of 150 DEG C, so almost the structure of base body can be reduced to zero to the impact based on the mirror substrate of this base body or the roughness value of catoptron.The change of structure can comprise the effect of very width variety type, such as the change in location of dislocation, the vibration of atom, the example (such as so-called orange peel effect (orangepeeleffect)) of thick good fortune, or liquate process.
In a preferred embodiment, polishing layer is arranged in base body.Advantageously, adhesion-promoting layer is arranged between base body and polishing layer.
Preferred polishing layer is long-pending in not having foreign current (externalcurrent) situation sinking layer, such as nickel-phosphorus or nickel-boron layer, etc.In this case, they can crystal phase or occur with X-ray amorphous phase.When layer of nickel-phosphorous, preferably weight comprises the layer of phosphorus more than 11%.Layer also can be nickel-phosphor alloy layer, and it also comprises one or two additional metal.Similarly, layer can be nickel-phosphorus or nickel-boron dispersion (dispersion) layer, if properly, dispersion layer comprises one or two additional metal equally.This is also applicable to nickel-boron layer.In addition, layers of copper, quartz glass layer, amorphous or crystal silicon layer, amorphous silicon carbide layer or indium tin oxide (ITO) layer have been proved to be favourable.All these layers all have common feature, and in the spatial frequency range namely especially between 10nm and 1 μm, they can be polished to RMS value is 5 dusts (angstrom) or significantly lower roughness.Use base body material described here, can even under thermal load and in long-term work, observe the stability of the microroughness in the spatial frequency range of 10nm to 250 μm, this is because propose the base body material not having morphologic surface deterioration under these conditions.Especially, the microroughness of the RMS value of dust magnitude is obtained.In the spatial frequency range of 10nm to 1 μm, the change of roughness can be in the region being less than 2.5 dusts; In the spatial frequency range of 1 μm to 250 μm, the fluctuation being less than 3 dusts of roughness value can be realized.
Depend on the combination of base body material and polishing layer material, between base body and polishing layer, provide adhesion-promoting layer can be favourable, thus the good combination between optimized integration body and polishing layer.
On the other hand, this object is realized by the catoptron for EUV projection exposure apparatus, and this catoptron comprises substrate as above, and at suprabasil, especially on polishing layer high reflection layer.
Feature for the catoptron of EUV projection exposure apparatus is: do the time period about farm labourer, and even in the temperature raised, structural strength is higher, and therefore in whole life cycle, has approximately constant roughness value.In this case, the mission life of several years can be realized.Here the substrate mentioned, especially based on the substrate of the base body be made up of intermetallic phase, be made up of precipitation-hardening aldary or be made up of particulate composite, especially but be not only suitable for the illuminator of the EUV projection exposure apparatus of such as point face catoptron form.
Not only from claim; and make above mentioned feature from instructions and accompanying drawing and further feature is obvious; wherein in each situation; independent feature is at embodiments of the invention and realize by itself in other areas; or realize using the form of sub-portfolio as multiple, and the favourable and intrinsic embodiment protected can be formed.
Accompanying drawing explanation
With reference to preferred example embodiment, illustrate in greater detail the present invention.In this,
Fig. 1 a, b schematically illustrate two modification of substrate with sectional view;
Fig. 2 a, b schematically illustrate two modification of catoptron with sectional view; And
Fig. 3 shows the phasor for binary Solder for Al-Cu Joint Welding system.
Embodiment
Fig. 1 a schematically illustrates the first modification of the embodiment of substrate 1, its polishing layer 3 comprising base body 2 and apply on it.Base body 2 and polishing layer 3 perform different functions.Although for base body 2, good dimensional stability is top-priority, and for polishing layer 3, good processing and polishing characteristic also have primary importance.
Can utilize traditional technique for vacuum coating, such as sputtering technology, electron beam evaporation, molecular beam epitaxy or ion beaming auxiliary filming technique apply polishing layer.If polishing layer is metal material, such as copper, nickel-phosphorus or nickel-boron, then preferably apply this polishing layer when not having foreign current.Especially, nickel-phosphorus or nickel-boron polishing layer can be applied as dispersion layer, in this case, such as teflon (polytetrafluoroethylene) can be used as dispersion.
Especially, preferably relatively high phosphorus or boron concentration can apply nickel-phosphorus or nickel-boron polishing layer, make them mainly or even completely to occur with amorphous form, and therefore there is better polishing characteristic.Then, they harden by such as thermal treatment, Cement Composite Treated by Plasma or Ions Bombardment.The silicon as polishing layer material can also be deposited using amorphous or crystal form in a controlled fashion by coating process.Compared with crystalline silicon, can more effectively polishing amorphous silicon, and if if required, amorphous silicon hardens by thermal treatment, Cement Composite Treated by Plasma or Ions Bombardment equally.Also can utilize ion beam to make the polishing layer be made up of silicon or silicon dioxide level and smooth.Polishing layer also can be made up of silit or be made up of indium tin oxide.
For the polishing layer of the polishing in metal base, the preferred thickness of polishing layer 3 can be about 5 μm to 10 μm.When nonmetal polishing layer 3, preferred thickness is about 1.5 μm to 3 μm.Use traditional glossing, medal polish layer can be polished to the r.m.s. roughness being less than 0.3nm in the spatial frequency range of 1 μm to 200 μm, and be less than the r.m.s. roughness of 0.25nm in the spatial frequency range of 0.01 μm to 1 μm.Use traditional glossing, nonmetal polishing layer can be polished to the r.m.s. roughness being less than 0.3nm in the spatial frequency range of whole 0.01 μm to 200 μm.
Fig. 1 b schematically illustrates the modification of the substrate 1 shown in Fig. 1 a, and wherein adhesion-promoting layer 4 is arranged between base body 2 and polishing layer 3.Preferably, adhesion-promoting layer 4 can have up to 1 μm, the thickness preferably between 100nm and 500nm.Such as, CVD (chemical vapor deposition) or PVD (physical vapour deposition (PVD)) technique can be used to apply adhesion-promoting layer.
As Fig. 2 a schematically illustrates with the first modification of embodiment, by applying high reflection layer 6 to polishing layer 3, this substrate 1 can be processed further, to form EUV mirror 5.For the use in the wavelength coverage of about 5nm to 20nm and there is the EUV radiation of the normal incidence of radiation, especially preferredly be, high reflection layer 6 is for having the multilayer system of the alternating layer of the material of different complex index of refraction real parts, by this multilayer system, simulate the crystal with the net plane that Bragg diffraction occurs to a certain extent.Such as, for the use of 13nm to 14nm, the multilayer system of the alternating layer of silicon and molybdenum can be applied.Especially, if high reflection layer 6 is configured to multilayer system, then preferably use the traditional vacuum coating process of such as sputtering technology, electron beam evaporation, molecular beam epitaxy or ion beaming auxiliary filming technique to apply this high reflection layer.For in the wavelength coverage of about 5nm to 20nm and the use had under the EUV radiation event of the glancing incidence of radiation, preferably there is the catoptron of the most top layer of the metal of such as ruthenium.
Fig. 2 b schematically illustrates another modification of the catoptron 5 shown in Fig. 2 a, wherein between adhesion-promoting layer 4 base body 2 that is arranged in the substrate 1 of catoptron 5 and polishing layer 3.
In a first example, catoptron 5 or the base body 2 of substrate 1 can be made up of particulate composite.Especially, base body 2 can be made up of the particulate composite with metallic matrix.Such as, above-mentioned particulate composite can be 2000 to 7000 series alloys, is preferably 5000 to 7000 series alloys, copper, low-alloy aldary or niobic acid copper.Advantageously, the preferred spheroid dispersion of size (extent) in the scope of 1nm to 20nm is the carbon of titanium carbide, titanium dioxide, aluminium oxide, silit, monox, graphite or adamas formula, can also arrange the dispersion of different materials in the base.These materials such as manufacture by powder metallurgy.Base body 2 also can be made up of the particulate composite with ceramic matrix.Such as, the particulate composite with silicon or carbon base body and silit dispersion is especially applicable to.Due to their covalent bond, they have extra high lattice rigidity (latticerigidity).Especially preferred, dispersion distributes in the base as far as possible equably, and described dispersion is little as much as possible, and compound substance has minimum possible dispersion interval.
In the second example, base body 2 can be made up of an alloy, the structure that the composition that this alloy has has similar atomic radius and has with replacement lattice.Such as, base body can be copper-nickel or silicon-aluminum alloy system.
In the 3rd example, base body 2 can be made up of precipitation hardening alloy.Such as, base body can be made up of the precipitation-hardening copper of such as AlCu4Mg1, CuCr, CuNi1Si, CuCr1Zr, CuZr, CuCoBe, CuNiSi or aluminium alloy.In a particular embodiment, after precipitation-hardening, alloy carries out further thermal treatment, and this has following effect: precipitation adopts the form of spheroid, to reduce stress in material or strain energy of distortion, thus increases elevated temperature strength further.For this reason, material is remained on one or two hour in a temperature, in this temperature, the base of the matrix of particulate composite is stablized mutually, but other phases in solution have just started to dissolve.So, temperature recurrent fluctuations around this temperature range of material, and subsequently material is slowly cooled to 20 DEG C with about 10 DEG C per hour.
In the 4th example, base body 2 can be made up of intermetallic phase.Fig. 3 shows the phasor of binary Solder for Al-Cu Joint Welding system, and the intermetallic phase of this binary Solder for Al-Cu Joint Welding system is especially suitable as the material of base body 2.At 300 DEG C, 16 intermetallic phases of AlxCuy (wherein, x, y are integer) are stable.Among those, ten intermetallic phases keep when being cooled to room temperature stable (not shown here).Most important phase and its stoichiometric composition are shown in Fig. 3.They are all located at the phase boundary line place a certain temperature range being parallel to temperature axis extension.Therefore, its microstructure keeps completely constant within the scope of these relevant temperature.Especially preferably Al2Cu, Al2Cu3 or Al3Cu5 etc. are as the material of the base body of the mirror substrate for EUV lithography.In modification, one of them composition also can be used to be other binary alloy systems of copper, the binary system of such as copper and zinc, tin, lanthanum, cerium, silicon or titanium.
In the 5th example, base body 2 also can be made up of the alloy formed having between two phase stability lines.These regions are gray shade in figure 3.Because stopped depositing technology by thermal treatment, so these alloys present mutually with thermally-stabilised.In this, preferably from the composition of scope wide especially, such as, between Al2Cu and AlCu.
Even if up in the temperature of 150 DEG C, the substrate of the example mentioned here all has the special high strength of 300MPa or higher and good long-time stability.In addition, the substrate comprising copper in its base body has high thermal conductivity, and therefore they can be easy to cooling.Due to the special base body of substrate, without the change of what microstructure successive in the temperature range occurred in the long-term work of the catoptron of substrate in EUV projection exposure apparatus.Therefore, the EUV mirror with this substrate has the following advantages: especially in the spatial frequency range of 0.1 μm to 200 μm, and its roughness value substantially remains unchanged during its mission life.EUV mirror described here is adapted at using in illuminator and projection system; utilize this illuminator to use EUV radiation illuminated mask or reticle, utilize this projection system by the arrangement projects of mask or reticle on the object (such as semiconductor wafer) to be exposed of EUV projection exposure apparatus.Due to high elevated temperature strength, this substrate is especially suitable for the catoptron being arranged in forward the higher place of thermal load (such as in the illumination system) in beam path further.This substrate is especially suitable as point face of pupil point face catoptron, and especially point face of face catoptron is divided in field.

Claims (24)

1. for the substrate comprising base body of the catoptron of EUV lithography, it is characterized in that, described base body (2) is made up of particulate composite.
2. substrate according to claim 1, is characterized in that, described particulate composite has the dispersion of size between 1nm and 20nm.
3. substrate according to claim 1 and 2, is characterized in that, described particulate composite has metallic matrix.
4. substrate according to claim 3, is characterized in that, described particulate composite has the dispersion of spheroid.
5. the substrate according to claim 3 or 4, is characterized in that, described metallic matrix is Copper substrate or aluminum substrate.
6. substrate according to claim 1 and 2, is characterized in that, described particulate composite has ceramic matrix.
7. substrate according to claim 6, is characterized in that, described ceramic matrix is silicon substrate or the carbon base body with silit dispersion.
8. for the substrate comprising base body of the catoptron of EUV lithography, it is characterized in that described base body (2) is made up of alloy, described alloy has in the phasor of corresponding alloy system, to be arranged in forming of the region of being delimited by phase stability line.
9. substrate according to claim 8, is characterized in that, described alloy is the alloy with replacement lattice.
10. substrate according to claim 8, is characterized in that, described alloy is precipitation-hardening.
Substrate according to any one of 11. according to Claim 8 to 10, is characterized in that, described alloy is copper or aluminium alloy.
The substrate comprising base body of 12. 1 kinds of catoptrons for EUV lithography, is characterized in that, described base body (2) is made up of the intermetallic phase of alloy system.
13. substrates according to claim 12, is characterized in that, described base body (2) is made by wherein observing the intermetallic phase that stoichiometry standard forms.
14. substrates according to claim 12 or 13, it is characterized in that, described base body (2) is made up of the intermetallic phase formed having corresponding to the phase stability line in the phasor of described alloy system.
15., according to claim 12 to the substrate according to any one of 14, is characterized in that, described alloy has in the phasor of corresponding alloy system, to be arranged in forming of the region of being delimited by phase stability line.
16., according to claim 12 to the substrate according to any one of 15, is characterized in that, described intermetallic phase has the Bravais lattice identical with its composition at crystal form.
17., according to claim 12 to the substrate according to any one of 16, is characterized in that, described alloy is binary system, and a composition of this binary system is copper.
18., according to claim 12 to the substrate according to any one of 17, is characterized in that, described alloy is binary Solder for Al-Cu Joint Welding system.
19. substrates according to any one of claim 1 to 18, it is characterized in that, the material of described base body (2) has face-centred cubic structure.
20. the substrate according to any one of claim 1 to 19, is characterized in that, in year, when temperature is changed to 150 DEG C from 20 DEG C, the microstructure of the material of described base body (2) does not change.
21. substrates according to any one of claim 1 to 20, it is characterized in that, polishing layer (3) is arranged in described base body (2).
22. substrates according to any one of claim 1 to 21, is characterized in that, arrange adhesion-promoting layer (4) between described base body (2) and described polishing layer (3).
23. 1 kinds of catoptrons for EUV projection exposure apparatus, comprise the substrate (1) according to any one of claim 1 to 20 and the high reflection layer (6) in described substrate (1).
24. 1 kinds of catoptrons for EUV projection exposure apparatus, comprise the substrate (1) according to claim 21 or 22 and the high reflection layer (6) on described polishing layer (3).
CN201510870929.4A 2011-01-21 2012-01-14 The substrate of reflecting mirror for extreme ultraviolet photolithographic Active CN105353433B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161434869P 2011-01-21 2011-01-21
US61/434,869 2011-01-21
DE201110002953 DE102011002953A1 (en) 2011-01-21 2011-01-21 Substrate for mirror for extreme ultraviolet lithography, comprises base body which is alloy system that is made of intermetallic phase having crystalline component, where intermetallic phase has bravais lattice
DE102011002953.2 2011-01-21
CN201280006089.1A CN103328664B (en) 2011-01-21 2012-01-14 For the substrate of the speculum of EUV lithography

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201280006089.1A Division CN103328664B (en) 2011-01-21 2012-01-14 For the substrate of the speculum of EUV lithography

Publications (2)

Publication Number Publication Date
CN105353433A true CN105353433A (en) 2016-02-24
CN105353433B CN105353433B (en) 2019-08-23

Family

ID=46510655

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201280006089.1A Active CN103328664B (en) 2011-01-21 2012-01-14 For the substrate of the speculum of EUV lithography
CN201910693451.0A Active CN110376670B (en) 2011-01-21 2012-01-14 Substrate for mirrors for extreme ultraviolet lithography
CN201510870929.4A Active CN105353433B (en) 2011-01-21 2012-01-14 The substrate of reflecting mirror for extreme ultraviolet photolithographic

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN201280006089.1A Active CN103328664B (en) 2011-01-21 2012-01-14 For the substrate of the speculum of EUV lithography
CN201910693451.0A Active CN110376670B (en) 2011-01-21 2012-01-14 Substrate for mirrors for extreme ultraviolet lithography

Country Status (9)

Country Link
US (3) US20130301151A1 (en)
EP (2) EP3489374B1 (en)
JP (1) JP6023083B2 (en)
KR (1) KR102080180B1 (en)
CN (3) CN103328664B (en)
DE (1) DE102011002953A1 (en)
ES (1) ES2933686T3 (en)
PL (1) PL3489374T3 (en)
WO (1) WO2012098062A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009040785A1 (en) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrate made of an aluminum-silicon alloy or crystalline silicon, metal mirror, process for its preparation and its use
DE102011002953A1 (en) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrate for mirror for extreme ultraviolet lithography, comprises base body which is alloy system that is made of intermetallic phase having crystalline component, where intermetallic phase has bravais lattice
DE102013107192A1 (en) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflective optical element for grazing incidence in the EUV wavelength range
DE102013215541A1 (en) 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Mirror, in particular for a microlithographic projection exposure apparatus
WO2017158989A1 (en) * 2016-03-16 2017-09-21 東洋アルミニウム株式会社 Aluminum foil for ultraviolet light reflecting materials and method for producing same
DE102016209359A1 (en) * 2016-05-31 2017-11-30 Carl Zeiss Smt Gmbh EUV collector
CN112662918A (en) * 2020-12-02 2021-04-16 国网电力科学研究院武汉南瑞有限责任公司 Al2O3-TiC particle reinforced aluminum matrix composite material and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0939467A2 (en) * 1998-02-26 1999-09-01 Nikon Corporation Mirror for an ultraviolet laser and method
US20040165296A1 (en) * 2003-02-24 2004-08-26 Schaefer John P. High precision mirror, and a method of making it
US20040174624A1 (en) * 2001-06-02 2004-09-09 Martin Weiser Reflecting device for electromagnetic waves
CN1580832A (en) * 2004-05-20 2005-02-16 中国科学院上海技术物理研究所 Heavy-cabiber light composite material mirror and its preparing method
JP2005259949A (en) * 2004-03-11 2005-09-22 Nikon Corp Mirror and illumination optical device
CN1719287A (en) * 2005-06-29 2006-01-11 中国人民解放军国防科学技术大学 Sandwiched type structure SIC base composite material light reflection mirrow and its preparation method
CN101088031A (en) * 2004-12-23 2007-12-12 弗劳恩霍弗实用研究促进协会 Thermally stable multilayer mirror for the EUV spectral region

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1877141A (en) * 1930-04-07 1932-09-13 Alfred J Lyon Aluminum casting alloy
US4093349A (en) * 1976-10-27 1978-06-06 Northrop Corporation High reflectivity laser mirrors
DE3107612A1 (en) * 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München LASER MIRROR, ESPECIALLY LASER POLYGON MIRROR
JPS61266535A (en) * 1985-05-21 1986-11-26 Nissan Motor Co Ltd Copper-base composite material
US4643543A (en) * 1986-01-27 1987-02-17 Atlantic Richfield Company Mirror optic article
JPS62180301A (en) * 1986-02-04 1987-08-07 Toshiba Corp Reflecting mirror
US4659548A (en) * 1986-02-13 1987-04-21 The United States Of America As Represented By The Secretary Of The Navy Fabrication of metal matrix composite mirror
US4755221A (en) * 1986-03-24 1988-07-05 Gte Products Corporation Aluminum based composite powders and process for producing same
US4803334A (en) * 1987-11-16 1989-02-07 Westinghouse Electric Corp. Method for laser beam welding metal matrix composite components
JPH0715523B2 (en) * 1988-05-31 1995-02-22 住友電気工業株式会社 Aspherical mirror for laser
ES2028537A6 (en) * 1990-09-17 1992-07-01 Martin Gutierrez Antonio Process for decorating circular mirrors
JPH06279897A (en) * 1992-02-06 1994-10-04 Chuetsu Gokin Chuko Kk Precipitation hardening copper alloy having excellent softening property
JP2684927B2 (en) * 1992-06-16 1997-12-03 日本鋼管株式会社 Optical element substrate
DE69520268T2 (en) * 1995-02-01 2001-08-09 Brush Wellman Treatment of alloys and articles made thereafter
US5699188A (en) * 1995-06-26 1997-12-16 Minnesota Mining And Manufacturing Co. Metal-coated multilayer mirror
ES2176655T3 (en) * 1996-08-15 2002-12-01 Alcan Tech & Man Ag REFLECTOR WITH RESISTANT SURFACE.
US6183877B1 (en) * 1997-03-21 2001-02-06 Inco Limited Cast-alumina metal matrix composites
JPH11326598A (en) * 1998-05-08 1999-11-26 Nikon Corp Reflecting mirror and its manufacture
US6377655B1 (en) * 1998-05-08 2002-04-23 Nikon Corporation Reflective mirror for soft x-ray exposure apparatus
JP3316191B2 (en) * 1998-12-24 2002-08-19 日本碍子株式会社 Beryllium-copper-zinc alloy with excellent mirror finish
JP4410367B2 (en) * 1999-12-24 2010-02-03 キヤノン電子株式会社 Metal mirror, metal rotating polygon mirror, and manufacturing method thereof
US6587263B1 (en) * 2000-03-31 2003-07-01 Lockheed Martin Corporation Optical solar reflectors
EP1154289A1 (en) * 2000-05-09 2001-11-14 Alcan Technology & Management AG Reflector
DE10134267B4 (en) * 2001-07-18 2007-03-01 Gkss-Forschungszentrum Geesthacht Gmbh Device for the reflection of X-rays
US6634760B2 (en) * 2001-08-27 2003-10-21 The Regents Of The University Of California Low-cost method for producing extreme ultraviolet lithography optics
JP2005268359A (en) * 2004-03-17 2005-09-29 Nikon Corp Mirror and lighting optical equipment
JP4210239B2 (en) * 2004-06-01 2009-01-14 日鉱金属株式会社 Titanium copper excellent in strength, conductivity and bending workability, and its manufacturing method
JP2006190862A (en) * 2005-01-07 2006-07-20 Taiheiyo Cement Corp Reflecting mirror for exposure
WO2006103885A1 (en) * 2005-03-29 2006-10-05 Kabushiki Kaisha Kobe Seiko Sho Al BASE ALLOY EXCELLENT IN HEAT RESISTANCE, WORKABILITY AND RIGIDITY
DE102005026418B4 (en) 2005-06-08 2008-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mirror carrier for an optical mirror
JP5393152B2 (en) * 2005-09-07 2014-01-22 エム キューブド テクノロジーズ， インコーポレイテッド Metal matrix composite body and method for making the same
US7612285B2 (en) * 2007-01-08 2009-11-03 Edtek, Inc. Conversion of solar energy to electrical and/or heat energy
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
US20090148334A1 (en) * 2007-12-05 2009-06-11 United States of America as represented by the Administrator of the National Aeronautics and Nanophase dispersion strengthened low cte alloy
DE102009000099A1 (en) * 2009-01-09 2010-07-22 Carl Zeiss Smt Ag Micro mirror array with double bending beam arrangement and electronic actuators
US8057203B2 (en) * 2008-10-02 2011-11-15 Gap Engineering LLC Pyrospherelator
DE102009039400A1 (en) * 2009-08-31 2011-03-03 Carl Zeiss Laser Optics Gmbh Reflective optical element for use in an EUV system
DE102009040785A1 (en) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrate made of an aluminum-silicon alloy or crystalline silicon, metal mirror, process for its preparation and its use
US8810775B2 (en) * 2010-04-16 2014-08-19 Media Lario S.R.L. EUV mirror module with a nickel electroformed curved mirror
DE102011079933A1 (en) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optical element for UV or EUV lithography
DE102010039927A1 (en) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Substrate for mirror for EUV lithography
DE102011002953A1 (en) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrate for mirror for extreme ultraviolet lithography, comprises base body which is alloy system that is made of intermetallic phase having crystalline component, where intermetallic phase has bravais lattice
DE102016217735A1 (en) * 2016-09-16 2018-03-22 Carl Zeiss Smt Gmbh Component for a mirror assembly for EUV lithography

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0939467A2 (en) * 1998-02-26 1999-09-01 Nikon Corporation Mirror for an ultraviolet laser and method
US20040174624A1 (en) * 2001-06-02 2004-09-09 Martin Weiser Reflecting device for electromagnetic waves
US20040165296A1 (en) * 2003-02-24 2004-08-26 Schaefer John P. High precision mirror, and a method of making it
JP2005259949A (en) * 2004-03-11 2005-09-22 Nikon Corp Mirror and illumination optical device
CN1580832A (en) * 2004-05-20 2005-02-16 中国科学院上海技术物理研究所 Heavy-cabiber light composite material mirror and its preparing method
CN101088031A (en) * 2004-12-23 2007-12-12 弗劳恩霍弗实用研究促进协会 Thermally stable multilayer mirror for the EUV spectral region
CN1719287A (en) * 2005-06-29 2006-01-11 中国人民解放军国防科学技术大学 Sandwiched type structure SIC base composite material light reflection mirrow and its preparation method

Also Published As

Publication number Publication date
JP2014506724A (en) 2014-03-17
PL3489374T3 (en) 2023-01-30
KR102080180B1 (en) 2020-02-24
WO2012098062A3 (en) 2012-10-18
CN103328664B (en) 2016-01-20
EP2665839A2 (en) 2013-11-27
ES2933686T3 (en) 2023-02-13
US20130301151A1 (en) 2013-11-14
JP6023083B2 (en) 2016-11-09
CN105353433B (en) 2019-08-23
US20210149093A1 (en) 2021-05-20
EP3489374B1 (en) 2022-09-21
US20170160447A1 (en) 2017-06-08
WO2012098062A2 (en) 2012-07-26
CN110376670B (en) 2022-03-22
CN110376670A (en) 2019-10-25
CN103328664A (en) 2013-09-25
KR20140018245A (en) 2014-02-12
US10935704B2 (en) 2021-03-02
EP3489374A1 (en) 2019-05-29
DE102011002953A1 (en) 2012-07-26
EP2665839B1 (en) 2018-12-26

Similar Documents

Publication Publication Date Title
US20210149093A1 (en) Substrate for an euv-lithography mirror
US8976927B2 (en) Substrate for mirrors for EUV lithography
US10605966B2 (en) Enhanced performance metallic based optical mirror substrates
JP5716038B2 (en) Reflective optical element for EUV lithography
WO2016054126A1 (en) Mirror substrates with highly finishable corrosion-resistant coating
US20130057952A1 (en) Substrate made of an aluminum-silicon alloy or crystalline silicon, metal mirror, method for the production thereof, and use thereof
FR2672905A1 (en) COATINGS FORMING PROTECTION BARRIERS AGAINST OXIDATION, CONTAINING A COMPATIBILITY LAYER.
Samsonov et al. Large-scale collecting mirrors for ITER optical diagnostic
Kaiser et al. High performance EUV multilayer optics
US11231208B2 (en) Solar heat collector tube
Foltyn et al. Preparation and characterization of multilayers for EUV applications
JPS63208802A (en) Lighter composite brazed member

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant