CN105333951B - Terahertz wave detector based on field-effect transistor - Google Patents
Terahertz wave detector based on field-effect transistor Download PDFInfo
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- CN105333951B CN105333951B CN201510764948.9A CN201510764948A CN105333951B CN 105333951 B CN105333951 B CN 105333951B CN 201510764948 A CN201510764948 A CN 201510764948A CN 105333951 B CN105333951 B CN 105333951B
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- effect transistor
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- 230000005669 field effect Effects 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical group 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Microwave Amplifiers (AREA)
Abstract
A kind of terahertz wave detector based on field-effect transistor, the terahertz wave detector include antenna, matching network and the field-effect transistor for detection.Wherein, antenna is used for receiving terahertz wave signal, the terahertz wave signal received is transferred to the source electrode of field-effect transistor by antenna by a matching network, and the grid external power supply of scene effect transistor biases and an open circuit quarter-wave matched transform device is connect at this grid.By the present invention in that antenna ground causes field-effect transistor to have DC channel, without adding a DC offset voltage by additional feedthrough on antenna again；The grid of scene effect transistor of the present invention adds an open circuit quarter-wave matched transform device, so that grid is zero point for terahertz wave signal to be measured, but the DC offset voltage of grid is not influenceed, so as to eliminate influence of the outside lead to field-effect transistor AC impedance under THz wave frequency to be measured.
Description
Technical field
The present invention relates to THz wave detection technology field, relates more specifically to a kind of terahertz based on field-effect transistor
Hereby wave detector.
Background technology
Terahertz electromagnetic wave has many unique features：The through characteristic of THz wave makes it be imaged available for safety check；Too
The black body radiation that dust is largely cooled down after Hertz wave and Big Bang is in identical wave band, and universe is entered with THz wave
Row is imaged as people and depicts more full and accurate view；THz wave and the same frequency of vibration of many large biological molecules, this is biology
Medical detection opens new approach；Terahertz wave band can provide bigger bandwidth, and being created for following high-speed radiocommunication can
Energy.This terahertz wave signal detecting structure based on field-effect transistor may be implemented in Metal-oxide-semicondutor field-effect crystalline substance
Body pipe integrated circuit technology, so may be such that terahertz wave detector Highgrade integration.Have pointed out in the world at present based on N-type gold
The THz wave detecting structure of category-Oxide-Semiconductor Field effect transistor, the structure are the THz waves for receiving antenna
Signal is transferred to the source electrode of N-type metal-oxide semiconductor fieldeffect transistor, and at antenna and N-type metal-oxide
The grid of thing-semiconductor field effect transistor connects fixed potential respectively.The shortcomings that structure is that the lead of external potential can influence
Impedance matching between antenna and N-type metal-oxide semiconductor fieldeffect transistor so that the terahertz received from antenna
Hereby ripple signal can not be maximumlly transferred in N-type metal-oxide semiconductor fieldeffect transistor.
The content of the invention
In view of this, it is an object of the present invention to provide a kind of THz wave detection based on field-effect transistor
Device, it is another object of the present invention to overcome, signal power efficiency of transmission between THz wave antenna and field-effect transistor is low
The problem of.
To achieve these goals, the invention provides a kind of terahertz wave detector based on field-effect transistor, bag
Include：
Antenna, for receiving terahertz wave signal；
Field-effect transistor, the source electrode of the field-effect transistor are used to input the THz wave letter that the antenna receives
Number, and a matching network is provided between the source electrode of the antenna and the field-effect transistor；In the field effect transistor
Be loaded with a fixation DC offset voltage on the grid of pipe, and the grid of the field-effect transistor be connected with an open circuit four/
One Wavelength matched converter；The drain electrode of the field-effect transistor is used for output signal.
Wherein, the antenna is ground patch antenna.The ground patch antenna is golden with ground connection at paster antenna center
Belong to plane and short circuit is carried out by a through hole.
Understood based on above-mentioned technical proposal, terahertz wave detector of the invention has following innovation and beneficial effect：It is logical
Crossing makes antenna ground so that field-effect transistor has DC channel, without adding always by additional feedthrough on antenna again
Flow bias voltage；The grid of scene effect transistor adds an open circuit quarter-wave matched transform device so that for it is to be measured too
Grid is zero point for Hertz wave signal, but does not influence the DC offset voltage of grid, and field is imitated so as to eliminate outside lead
Answer the influence of transistor AC impedance under THz wave frequency to be measured.
Brief description of the drawings
Fig. 1 is the structural representation of the terahertz wave detector of the present invention；
Fig. 2 is the structure top view of ground patch antenna of the present invention；
Fig. 3 is the structural side view of ground patch antenna of the present invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
The invention discloses a kind of terahertz wave detector based on field-effect transistor, including antenna, matching network with
And the field-effect transistor for detection.Wherein, antenna is used for receiving terahertz wave signal, the THz wave that antenna will receive
Signal is transferred to the source electrode of field-effect transistor, is transferred in order that obtaining the terahertz wave signal power that antenna receives and maximizing
Field-effect transistor, increase a matching network, the grid of scene effect transistor between antenna and the source electrode of field-effect transistor
Pole external power supply biases and an open circuit quarter-wave matched transform device is connect at this grid.
Preferably, antenna is, for example, ground patch antenna.
Preferably, field-effect transistor is, for example, metal-oxide semiconductor fieldeffect transistor, junction field
One of transistor.
Preferably, matching network is, for example, in single transmission line section, stub in parallel, series connection stub, double stubs
One kind.
Preferably, the wavelength in quarter-wave matched transform device divides for THz wave to be measured in open circuit four used
One of wavelength in Wavelength matched converter medium.
Below by preferred embodiment and accompanying drawing the present invention is further elaborated explanation.
As shown in figure 1, the present invention receives terahertz wave signal, the terahertz wave signal that antenna will receive by antenna
The source electrode of field-effect transistor is transferred to, field effect is transferred in order that obtaining the terahertz wave signal power that antenna receives and maximizing
Transistor is answered, increases by a matching network between antenna and the source electrode of field-effect transistor, outside the grid of scene effect transistor
Connect source bias and an open circuit quarter-wave matched transform device, the output signal effect on the scene of detector are connect at this grid
The grid of transistor is answered to export.
Wherein antenna is ground patch antenna, and its structure is as shown in Figures 2 and 3, golden with ground connection at the center of paster antenna
Belong to plane and short circuit is carried out by a through hole, its feature is that such a short circuit manner at the center of antenna, does not interfere with antenna
Electromagnetic radiation performance, and such a short circuit manner provides DC channel for field-effect transistor.
Field-effect transistor elects one in metal-oxide semiconductor fieldeffect transistor, junction field effect transistor as
Kind.
Matching network is elected as including one kind in single transmission line section, stub in parallel, series connection stub, double stubs.
Open circuit quarter-wave matched transform device can eliminate outside lead to field-effect transistor in Terahertz to be measured frequency
The influence of AC impedance under rate, its feature are that its length converts for THz wave to be measured in open circuit quarter-wave used
The a quarter of wavelength in device medium, its one end are in open-circuit condition, and the other end connects the grid of field-effect transistor.From reason
Understood by upper, when one end of a quarter-wave matched transform device is in open-circuit condition, then its other end is to corresponding wavelength
AC signal be short-circuit condition, so as to this open circuit quarter-wave matched transform device, can to eliminate outside lead brilliant to field-effect
The influence of body pipe AC impedance under THz wave frequency to be measured.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the protection of the present invention should be included in
Within the scope of.
Claims (4)
- A kind of 1. terahertz wave detector based on field-effect transistor, it is characterised in that including：Antenna, for receiving terahertz wave signal；Field-effect transistor, the source electrode of the field-effect transistor are used to input the terahertz wave signal that the antenna receives, And an impedance matching circuit is provided between the source electrode of the antenna and the field-effect transistor；In the field effect transistor Be loaded with a fixation DC offset voltage on the grid of pipe, and the grid of the field-effect transistor be connected with an open circuit four/ One Wavelength matched converter；The drain electrode of the field-effect transistor is used for output signal；Wherein, the impedance matching circuit is one in single transmission line section, stub in parallel, series connection stub or double stubs Kind；Wherein, it is described open circuit quarter-wave matched transform device length for THz wave to be measured open circuit four used/ The a quarter of wavelength in one wavelength shifter medium, its one end are in open-circuit condition, and it is brilliant that the other end connects the field-effect The grid of body pipe.
- 2. the terahertz wave detector according to claim 1 based on field-effect transistor, it is characterised in that the antenna For ground patch antenna.
- 3. the terahertz wave detector according to claim 2 based on field-effect transistor, it is characterised in that the ground connection Paster antenna carries out short circuit with ground metal plane at paster antenna center by a through hole.
- 4. the terahertz wave detector according to claim 1 based on field-effect transistor, it is characterised in that the field effect It is metal-oxide semiconductor fieldeffect transistor or junction field effect transistor to answer transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510764948.9A CN105333951B (en) | 2015-11-10 | 2015-11-10 | Terahertz wave detector based on field-effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510764948.9A CN105333951B (en) | 2015-11-10 | 2015-11-10 | Terahertz wave detector based on field-effect transistor |
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| Publication Number | Publication Date |
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| CN105333951A CN105333951A (en) | 2016-02-17 |
| CN105333951B true CN105333951B (en) | 2017-11-21 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2554739A (en) * | 2016-10-07 | 2018-04-11 | Canon Kk | Signal detector comprising a plasma FET with impedance matching |
| CN109506690A (en) * | 2017-09-14 | 2019-03-22 | 中国科学院沈阳自动化研究所 | A kind of terahertz wave detector |
| CN108180931A (en) * | 2017-12-28 | 2018-06-19 | 中国科学院半导体研究所 | A kind of terahertz wave detector |
| CN108007566B (en) * | 2017-12-29 | 2023-11-03 | 同方威视技术股份有限公司 | Terahertz detector |
| CN109239787A (en) * | 2018-09-19 | 2019-01-18 | 天津大学 | A kind of terahertz wave detector based on array plaster antenna |
| CN109540286A (en) * | 2018-10-18 | 2019-03-29 | 天津大学 | A kind of field effect transistor terahertz wave detector based on asymmetric channels |
| CN111121957A (en) * | 2019-12-10 | 2020-05-08 | 江苏盖姆纳米材料科技有限公司 | Room temperature high-frequency terahertz wave detector and preparation method thereof |
| CN114719967B (en) * | 2021-01-04 | 2024-06-25 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
| CN114725676B (en) * | 2021-01-04 | 2024-08-09 | 中国科学院沈阳自动化研究所 | Differential output terahertz wave detector |
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| CN103872461A (en) * | 2014-03-14 | 2014-06-18 | 天津工业大学 | Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process |
| CN103943964A (en) * | 2014-04-01 | 2014-07-23 | 天津工业大学 | Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
| CN104916732A (en) * | 2014-03-12 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene terahertz wave detector and manufacturing method thereof |
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| US7679427B2 (en) * | 2007-06-14 | 2010-03-16 | Suvolta, Inc. | Semiconductor device including a bias voltage generator |
| JP6282041B2 (en) * | 2013-03-29 | 2018-02-21 | キヤノン株式会社 | Oscillator |
| US9341709B2 (en) * | 2014-01-10 | 2016-05-17 | Korea Advanced Institute Of Science And Technology | Image sensing device and focal plane array device using frequency conversion for real-time terahertz imaging |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN104916732A (en) * | 2014-03-12 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene terahertz wave detector and manufacturing method thereof |
| CN103872461A (en) * | 2014-03-14 | 2014-06-18 | 天津工业大学 | Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process |
| CN103943964A (en) * | 2014-04-01 | 2014-07-23 | 天津工业大学 | Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
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| CN105333951A (en) | 2016-02-17 |
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