CN206422217U - Frequency reconfigurable couple feed loop aerial - Google Patents
Frequency reconfigurable couple feed loop aerial Download PDFInfo
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- CN206422217U CN206422217U CN201621389392.6U CN201621389392U CN206422217U CN 206422217 U CN206422217 U CN 206422217U CN 201621389392 U CN201621389392 U CN 201621389392U CN 206422217 U CN206422217 U CN 206422217U
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- spin
- loop aerial
- direct current
- current biasing
- antenna
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Abstract
The utility model belongs to solid state plasma and microstrip antenna technical field, and in particular to a kind of frequency reconfigurable couple feed loop aerial, including semiconductor chip, dielectric-slab, SPiN diode rings, direct current biasing line, manifold type feed.When metal contact zone is respectively connecting to the both positive and negative polarity of direct current biasing, by applying DC voltage all SPiN diodes in whole SPiN diodes string can be made to be in forward conduction state.When exciting solid state plasma using the biasing of SPiN diode forwards, the electromagnetic radiation available for antenna.And SPiN diodes are not added with biasing when closing, then semiconductor medium state is presented, it is possible to resolve the design of the mutual coupling problem between antenna, more conducively reconfigurable antenna.The frequency reconfigurable couple feed loop aerial have small volume, restructural, be easily integrated, it is simple in construction, feed easily, frequency can rapid jumping beneficial effect.
Description
Technical field
The utility model belongs to solid state plasma and microstrip antenna technical field, and in particular to a kind of frequency reconfigurable coupling
Close feed ring antenna.
Background technology
With the further development of science and technology, wireless communication technology plays more and more important in the life of people
Effect.The development trend of new generation of wireless communication system includes realizing high speed data transfer, realizes between multiple wireless systems
Interconnection, realizes effective utilization of limited frequency spectrum resource, obtains to adaptive ability of surrounding environment etc..Therefore the communications field pair
The requirement of antenna also more and more higher.
The antenna that has worked out, which is substantially, at present is made of metal, therefore shape is not after completing for this antenna
It can change, and with larger RCS, this greatly reduces the Stealth Fighter of antenna.Metal antenna weight is big,
Integrated level is low, and the features such as volume is big also limit its application in other respects.Therefore a kind of new antenna of design is needed
The communication requirement of current rapid growth is met to promote the progress of the communications field.
For break through the changeless service behaviour of traditional antenna be difficult to meet various system requirements and it is complicated and changeable should
With environment, the concept of reconfigurable antenna is paid attention to and developed, and reconstructable microstrip aerial is because of its small volume, and section is low excellent
Point turns into the focus that reconfigurable antenna is studied.Because the design of reconfigurable antenna need to consider the mutual coupling between antenna sections, increase
The design difficulty of antenna.It is more sharp and solid state plasma is present in semiconductor medium, it is possible to resolve the mutual coupling problem between antenna
In the design of reconfigurable antenna.Therefore the utility model is based on a kind of frequency reconfigurable couple feed annular of SPiN diode designs
Antenna solves communication problem encountered at present.
Utility model content
In order to solve the above-mentioned problems in the prior art, the utility model provides a kind of frequency reconfigurable and couples feedback
Electric loop aerial.The technical problems to be solved in the utility model is achieved through the following technical solutions：
A kind of frequency reconfigurable couple feed loop aerial, including semiconductor chip；Dielectric-slab；First SPiN diodes
Ring, the 2nd SPiN diode rings, the first direct current biasing line, the second direct current biasing line may be contained within the semiconductor chip；Coupling
Box-like feed, is arranged on the dielectric-slab.
Said frequencies restructural couple feed loop aerial, the first SPiN diode rings, the poles of the 2nd SPiN bis-
Pipe ring, the first direct current biasing line and the second direct current biasing line are produced on the semiconductor chip using semiconductor technology
On.
Said frequencies restructural couple feed loop aerial, the semiconductor chip and the dielectric-slab are Si bases SOI half
Conductor piece.
Said frequencies restructural couple feed loop aerial, the first SPiN diode rings include the first SPiN diodes
String, the 2nd SPiN diode rings include the 2nd SPiN diode strings, and the first SPiN diode rings and described second
The girth of SPiN diode rings is equal to the electromagnetic wavelength to be received signal.
Said frequencies restructural couple feed loop aerial, the first SPiN diode strings are provided with the first direct current biasing
Line, the 2nd SPiN diode strings are provided with the second direct current biasing line, and the first direct current biasing line and described second straight
Offset line is flowed to make on the semiconductor substrate using heavily doped polysilicon.
Said frequencies restructural couple feed loop aerial, in addition to dielectric-slab, the upper surface of the manifold type feed is
Metal micro-strip paster, lower surface is metal ground plate.
Said frequencies restructural couple feed loop aerial, the metal micro-strip paster includes major branch section, the first branch section
And the second branch section.
Said frequencies restructural couple feed loop aerial, the width of the major branch section and the thickness of the dielectric-slab are by institute
The 50 Ω impedance matchings for stating manifold type feed determine that the length and width of the first branch section and the second branch section is distinguished
Determined by the impedance matching of antenna.
Said frequencies restructural couple feed loop aerial, the distance between the semiconductor chip and described dielectric-slab by
The gain of antenna is determined.
Said frequencies restructural couple feed loop aerial, it is characterised in that the number of the first SPiN diode rings
For at least one, the number of the 2nd SPiN diode rings is at least one.
The beneficial effects of the utility model are：
Firstth, the frequency reconfigurable couple feed loop aerial small volume, section are low, simple in construction, easy to process.
Secondth, direct current biasing line is used as using heavily doped polysilicon, it is to avoid influence of the metal feeder to antenna performance.
3rd, only need to be by controlling it to be turned on or off, i.e., using basic component units of the SPiN diodes as antenna
The restructural of frequency can be achieved.
Brief description of the drawings
By the detailed description below with reference to accompanying drawing, other side and feature of the present utility model become obvious.But should
When knowing, the accompanying drawing is only the purpose design explained, not as the restriction of scope of the present utility model, because its
It should refer to appended claims.It should also be noted that unless otherwise noted, it is not necessary to scale accompanying drawing, they are only
Try hard to conceptually illustrate structure described herein and flow.
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail：
Fig. 1 is a kind of SPiN diode structures schematic diagram that the utility model embodiment is provided.
Fig. 2 is a kind of SOI fundamental frequencies restructural coupling feedback based on SPiN diodes that the utility model embodiment is provided
The structural representation of electric loop aerial；
Fig. 3 is a kind of SOI fundamental frequencies restructural coupling feedback based on SPiN diodes that the utility model embodiment is provided
The semiconductor substrate structures schematic diagram of electric loop aerial；
Fig. 4 is a kind of SOI fundamental frequencies restructural coupling feedback based on SPiN diodes that the utility model embodiment is provided
The medium plate structure schematic diagram of electric loop aerial；
Fig. 5 is a kind of structural representation for SPiN diodes string that the utility model embodiment is provided.
In figure：1st, semiconductor chip；2nd, dielectric-slab；3rd, the first SPiN diode rings；4th, the 2nd SPiN diode rings；5th,
One direct current offset line；6th, the second direct current biasing line；7th, manifold type feed；8th, the first SPiN diode strings；9th, the poles of the 2nd SPiN bis-
Pipe string；10th, metal micro-strip paster；11st, metal ground plate；12nd, major branch section；13rd, the first branch section；14th, the second branch section；22、
Intrinsic region；23rd, the first metal contact zone；24th, the second metal contact zone；26th, N+ areas；27th, P+ areas.
Embodiment
Further detailed description, but embodiment party of the present utility model are to the utility model with reference to specific embodiment
Formula not limited to this.
Embodiment one：
Fig. 2 is referred to, Fig. 2 is that a kind of SOI fundamental frequencies based on SPiN diodes that the utility model embodiment is provided can
Reconstruct the structural representation of couple feed loop aerial.The frequency reconfigurable couple feed loop aerial include semiconductor chip 1,
Dielectric-slab 2, the first SPiN diode rings 3, the 2nd SPiN diode rings 4, the first direct current biasing line 5, the second direct current biasing line 6,
It may be contained within the semiconductor chip 1；Manifold type feed 7, is arranged on the dielectric-slab 2.
Said frequencies restructural couple feed loop aerial, the first SPiN diode rings 3, the poles of the 2nd SPiN bis-
Pipe ring 4, the first direct current biasing line 5 and the second direct current biasing line 6 are produced on the semiconductor using semiconductor technology
On substrate 1.
Said frequencies restructural couple feed loop aerial, the semiconductor chip 1 and the dielectric-slab 2 are Si bases SOI
Semiconductor chip.
Said frequencies restructural couple feed loop aerial, the first SPiN diode rings 3 include the poles of the first SPiN bis-
Pipe string 8, the 2nd SPiN diode rings 4 include the 2nd SPiN diodes string 9, and the first SPiN diode rings 3 and institute
The girth for stating the 2nd SPiN diode rings 4 is equal to the electromagnetic wavelength to be received signal.
Said frequencies restructural couple feed loop aerial, it is inclined that the first SPiN diodes string 8 is provided with the first direct current
Put line 5, the 2nd SPiN diodes string 9 is provided with the second direct current biasing line 6, and the first direct current biasing line 5 and described
Second direct current biasing line 6 is produced on semiconductor chip 1 using heavily doped polysilicon.
Said frequencies restructural couple feed loop aerial, in addition to dielectric-slab 2, the upper surface of the manifold type feed 7
For metal micro-strip paster, lower surface is metal ground plate.
Said frequencies restructural couple feed loop aerial, the metal micro-strip paster includes major branch section 12, the first branch
The branch section 14 of section 13 and second.
Said frequencies restructural couple feed loop aerial, the width of the major branch section 12 and the thickness of the dielectric-slab 2
Determined by 50 Ω impedance matchings of the manifold type feed 7, the length of the first branch section 13 and the second branch section 14
Determined respectively by the impedance matching of antenna with width.
The distance between said frequencies restructural couple feed loop aerial, the semiconductor chip 1 and described dielectric-slab 2
Determined by the gain of antenna.
Said frequencies restructural couple feed loop aerial, it is characterised in that the number of the first SPiN diode rings 3
For at least one, the number of the 2nd SPiN diode rings 4 is at least one.
In the present embodiment, by designing a kind of annular day of SOI fundamental frequency restructurals couple feed based on SPiN diodes
The mode of line, solves the problems, such as the mutual coupling between the run into antenna sections of communication at present, brings loop aerial small volume, can weigh
Structure, be easily integrated, it is simple in construction, feed easily, frequency can rapid jumping, available for various frequency hopping radio sets or the beneficial effect of equipment
Really.
Embodiment two：
It is a kind of SPiN diode structures signal that the utility model embodiment is provided please also refer to Fig. 1 and Fig. 5, Fig. 1
Figure, Fig. 5 is a kind of structural representation for SPiN diodes string that the utility model embodiment is provided.In each SPiN diode strings
Including multiple SPiN diodes, and these SPiN diodes are connected in series.The SPiN diodes are by P+ areas 27, N+ areas 26 and intrinsic
Area 22 is constituted, and the first metal contact zone 23 is located at P+ areas 27, and the second metal contact zone 24 is located at N+ areas 26, in SPiN bis-
The metal contact zone 23 of the SPiN diodes of one end of pole pipe string is connected to the positive pole of direct current biasing, in SPiN diode strings
The metal contact zone 24 of the SPiN diodes of the other end, can make to own in whole SPiN diodes string by applying DC voltage
SPiN diodes are in forward conduction state.When exciting solid state plasma using the biasing of SPiN diode forwards, it can be used for
The electromagnetic radiation of antenna.And SPiN diodes are not added with biasing when closing, then semiconductor medium state is presented, it is possible to resolve between antenna
The design of mutual coupling problem, more conducively reconfigurable antenna.
As shown in Fig. 2 the utility model is by semiconductor chip 1, dielectric-slab 2, the first SPiN diode rings 3, the 2nd SPiN
Diode ring 4, the first direct current biasing line 5, the second direct current biasing line 6, manifold type feed 7 are constituted.Wherein the first SPiN diodes
Ring 3, the 2nd SPiN diode rings 4, the first direct current biasing line 5, the second direct current biasing line 6 are made in using semiconductor technology and partly led
On body substrate 1, manifold type feed 7 is made on dielectric-slab 2 using chemical gas-phase deposition method.
As shown in figure 3, the first SPiN diode rings 3 are made up of the first SPiN diodes string 8, its ring girth is equal to be connect
The electromagnetic wavelength of receipts, one end of the first SPiN diodes string 8 is provided with the first direct current biasing line 5, another to be connected to common.
As shown in figure 3, the 2nd SPiN diode rings 4 are made up of the 2nd SPiN diodes string 9, its ring girth is equal to be connect
The electromagnetic wavelength (frequency) of receipts, the one end of the 2nd SPiN diodes string 9 is provided with the second direct current biasing line 6, another to be connected to public affairs
Holding altogether.
As shown in figure 3, the first direct current biasing line 5, the second direct current biasing line 6 are respectively connected to positive polarity, and any work
Moment can only have one group of direct current biasing line to be connected to positive polarity, by controlling the first direct current biasing line 5 or the second direct current biasing line 6
On voltage the first SPiN diodes string 8 or the 2nd SPiN diodes string 9 is in forward conduction state, lead
Logical SPiN diodes will produce solid state plasma in intrinsic region, and it has metalloid characteristic, may be used as the radiation of antenna
Structure.When different SPiN diodes string work, the electric size length of antenna can be changed, so as to realize operating frequency of antenna
Restructural.
As shown in figure 4, manifold type feed 7 is made on dielectric-slab 2 using chemical gas-phase deposition method, upper surface is metal
Microband paste 10, lower surface is metal ground plate 11, and metal micro-strip paster 10 includes a major branch section 12, the first branch section 13
And the second branch section 14.The width of major branch section 10 and the thickness of dielectric-slab 2 are determined by 50 Ω impedance matchings of feed, are additionally coupled to interior
The energy of outer shroud is bigger, then the width of major branch section 12 is bigger.First branch section 13 and the length and width of the second branch section 14 are by antenna
Impedance matching determine, can pass through the first branch section 13 and the length and width of the second branch section 14 change regulation antenna standing wave.
The distance between semiconductor chip and dielectric-slab are determined by the gain of antenna.
Using the SOI fundamental frequency restructural couple feed loop aerials based on SPiN diodes of the present embodiment, small volume,
Restructural, be easily integrated, it is simple in construction, feed easily, frequency can rapid jumping, available for various frequency hopping radio sets or equipment.
Above content is to combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that specific implementation of the present utility model is confined to these explanations.For the ordinary skill of the utility model art
For personnel, without departing from the concept of the premise utility, some simple deduction or replace can also be made, should all be regarded
To belong to protection domain of the present utility model.
Claims (10)
1. a kind of frequency reconfigurable couple feed loop aerial, it is characterised in that including：
Semiconductor chip (1)；
Dielectric-slab (2)；
First SPiN diode rings (3), the 2nd SPiN diode rings (4), the first direct current biasing line (5) and the second direct current biasing line
(6), it may be contained within the semiconductor chip (1)；
Manifold type feed (7), is arranged on the dielectric-slab (2).
2. loop aerial according to claim 1, it is characterised in that the first SPiN diode rings (3), described second
SPiN diode rings (4), the first direct current biasing line (5) and the second direct current biasing line (6) use semiconductor technology system
Make on the semiconductor chip (1).
3. loop aerial according to claim 1, it is characterised in that the semiconductor chip (1) is Si base soi semiconductors
Piece.
4. loop aerial according to claim 1, it is characterised in that the first SPiN diode rings (3) include first
SPiN diodes string (8), the 2nd SPiN diode rings (4) include the 2nd SPiN diodes string (9), and the first SPiN
Diode ring (3) and the girth of the 2nd SPiN diode rings (4) are equal to its electromagnetic wavelength to be received signal.
5. loop aerial according to claim 1, it is characterised in that in the first SPiN diodes string (8) and described
2nd SPiN diodes string (9) is provided at both ends with the first direct current biasing line (5) and the second direct current biasing line (6), and described first is straight
Stream offset line (5) and the second direct current biasing line (6) are produced on semiconductor chip (1) using heavily doped polysilicon.
6. loop aerial according to claim 1, it is characterised in that the upper surface of the manifold type feed (7) is metal
Microband paste (10), lower surface is metal ground plate (11).
7. loop aerial according to claim 6, it is characterised in that the metal micro-strip paster (10) includes major branch section
(12), the first branch section (13) and the second branch section (14).
8. loop aerial according to claim 7, it is characterised in that the width and the dielectric-slab of the major branch section (12)
(2) thickness determines by 50 Ω impedance matchings of the manifold type feed (7), the first branch section (13) and described second point
The length and width of minor matters (14) is determined by the impedance matching of antenna respectively.
9. loop aerial according to claim 1, it is characterised in that the semiconductor chip (1) and the dielectric-slab (2)
The distance between determined by the gain of antenna.
10. loop aerial according to claim 1, it is characterised in that the number of the first SPiN diode rings (3) is
At least one, the number of the 2nd SPiN diode rings (4) is at least one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621389392.6U CN206422217U (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable couple feed loop aerial |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621389392.6U CN206422217U (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable couple feed loop aerial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206422217U true CN206422217U (en) | 2017-08-18 |
Family
ID=59575358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621389392.6U Expired - Fee Related CN206422217U (en) | 2016-12-16 | 2016-12-16 | Frequency reconfigurable couple feed loop aerial |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206422217U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018113453A1 (en) * | 2016-12-20 | 2018-06-28 | 西安科锐盛创新科技有限公司 | Method for preparing gaas/ge/gaas heterogeneous spin diode applied to annular antenna |
| CN108736150A (en) * | 2018-03-22 | 2018-11-02 | 南京理工大学 | A kind of Ku/Ka audio range frequencies reconstructable microstrip aerial |
-
2016
- 2016-12-16 CN CN201621389392.6U patent/CN206422217U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018113453A1 (en) * | 2016-12-20 | 2018-06-28 | 西安科锐盛创新科技有限公司 | Method for preparing gaas/ge/gaas heterogeneous spin diode applied to annular antenna |
| CN108736150A (en) * | 2018-03-22 | 2018-11-02 | 南京理工大学 | A kind of Ku/Ka audio range frequencies reconstructable microstrip aerial |
| CN108736150B (en) * | 2018-03-22 | 2021-01-26 | 南京理工大学 | Ku/Ka waveband frequency reconfigurable microstrip antenna |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170818 Termination date: 20171216 |