CN105321807A - 光刻胶剥离方法 - Google Patents

光刻胶剥离方法 Download PDF

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Publication number
CN105321807A
CN105321807A CN201410440251.1A CN201410440251A CN105321807A CN 105321807 A CN105321807 A CN 105321807A CN 201410440251 A CN201410440251 A CN 201410440251A CN 105321807 A CN105321807 A CN 105321807A
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China
Prior art keywords
bond strength
line
semiconductor substrate
projection
substrate
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CN201410440251.1A
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English (en)
Inventor
施政宏
杨国华
侯翔彬
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Chipbond Technology Corp
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Chipbond Technology Corp
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Publication of CN105321807A publication Critical patent/CN105321807A/zh
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Abstract

一种光刻胶剥离方法，包含：提供半导体基板、浸泡步骤及剥离步骤，该半导体基板具有基板、焊垫、保护层、凸块下金属层、图案化光刻胶层及凸块，该图案化光刻胶层覆盖该凸块下金属层及该凸块的侧面，且该图案化光刻胶层及该凸块的该侧面之间形成有第一接合界面，该图案化光刻胶层及该凸块下金属层之间形成有第二接合界面，在浸泡步骤中，由于该图案化光刻胶接触化学液，可使得该第一接合界面的接合强度减弱，在剥离步骤中以具有适当冲击力的流体冲刷该半导体基板，可使该图案化光刻胶层由该基板上剥离，可大幅减少基板浸泡化学液的时间，并减少化学液的用量，且由于浸泡化学液的时间较短，并不会影响该半导体基板的结构，可大幅提升生产的良率。

Description

光刻胶剥离方法
技术领域
本发明是关于一种光刻胶剥离方法，特别是关于一种以流体剥离光刻胶的光刻胶剥离方法。
背景技术
现有习知凸块制造工艺包含：在基板上形成光刻胶层；对该光刻胶层进行曝光/显影，以图案化该光刻胶层；在图案化的该光刻胶层中镀上凸块；最后再将图案化的该光刻胶层移除而完成凸块制造工艺。其中在移除光刻胶的工艺中，一般是将覆盖有该光刻胶层的该基板浸入光刻胶剥离液中，使得该光刻胶层产生膨润、裂解而由该基板上剥离，但根据不同的产品需求考虑，制程中所使用的光刻胶材料及光刻胶剥离液的种类皆不相同，而造成现有习知技术在光刻胶剥离的工艺中常因将该基板浸入光刻胶剥离液的时间过长而导致凸块的散落或是导致该基板的保护层的损坏。反之，若该基板浸入光刻胶剥离液的浸泡时间过短，则易导致光刻胶层的残留，而影响凸块制造工艺的良率。此外，在凸块制造工艺中由于凸块需具有一定的厚度，因此，该光刻胶层的厚度也需涂布有相对的厚度，而导致于光刻胶剥离液浸泡的时间较长，且光刻胶剥离液的使用量也较多，而造成环境上的负担以及制作成本的增加。有鉴于上述现有的光刻胶剥离方法存在的缺陷，本发明人基于从事此类产品设计制造多年丰富的实务经验及专业知识，并配合学理的运用，积极加以研究创新，以期创设一种新的光刻胶剥离方法，能够改进一般现有的光刻胶剥离方法，使其更具有实用性。经过不断的研究、设计，并经过反复试作样品及改进后，终于创设出确具实用价值的本发明。
发明内容
本发明的主要目的在于，克服现有的光刻胶剥离方法存在的缺陷，而提供一种新的光刻胶剥离方法，所要解决的技术问题是借由流体冲刷覆盖有光刻胶的半导体基板，以使光刻胶层由半导体基板上剥离，可大幅减少浸泡化学液的时间，并减少化学液的用量，且由于浸泡化学液的时间较短，本发明的光刻胶剥离方法并不会影响半导体基板的结构，而可大幅提升生产的良率，非常适于实用。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的一种光阻剥离方法，其包含：半导体基板，该半导体基板具有基板、焊垫、保护层、凸块下金属层、图案化光刻胶层及凸块，该焊垫位于该基板的表面，该保护层覆盖该基板及该焊垫，且该保护层具有开口，该开口显露该焊垫，该凸块下金属层覆盖该保护层，该凸块设置于该凸块下金属层上，该凸块具有侧面，该图案化光刻胶层覆盖该凸块下金属层及该凸块的该侧面，且该图案化光刻胶层及该凸块的该侧面之间形成有第一接合界面，该图案化光刻胶层及该凸块下金属层之间形成有第二接合界面，其中该第一接合界面具有第一接合强度，该第二接合界面具有第二接合强度；
提供上述半导体基板进行以下步骤：
一、浸泡步骤，将该半导体基板浸泡至化学液中，使该化学液接触该图案化光刻胶层，且该化学液渗入该第一接合界面中，使该第一接合界面的该第一接合强度转变为第三接合强度，该第二接合界面的该第二接合强度转变为第四接合强度，其中该第三接合强度小于该第一接合强度；以及
二、剥离步骤，以流体冲刷该半导体基板，该流体具有冲击力，该冲击力大于该第三接合强度及该第四接合强度，以使该图案化光刻胶层由该基板上剥离，以显露该凸块的该侧面及该凸块下金属层。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
前述的光刻胶剥离方法，其中所述的第四接合强度小于该第二接合强度。
前述的光刻胶剥离方法，其中所述的流体为二流体(two-phaseflow)。
前述的光刻胶剥离方法，其中所述的流体的流量介于3升/分钟至5升/分钟之间。
前述的光刻胶剥离方法，其中所述的剥离步骤中，是以喷嘴喷出该流体，且该喷嘴至该半导体基板具有间距，该间距介于0.2公分至1公分之间。
前述的光刻胶剥离方法，其中所述的流体冲刷该半导体基板具有冲刷时间，该冲刷时间介于10秒至30秒之间。
前述的光刻胶剥离方法，其中所述的半导体基板浸泡至该化学液中具有浸泡时间，该浸泡时间介于1分钟至40分钟之间。
前述的光刻胶剥离方法，其中所述的流体可选自于去离子水(DIW)混合氮气或二氧化碳。
前述的光刻胶剥离方法，其中所述的凸块具有高度，该凸块的该高度介于150μm至200μm之间。
前述的光刻胶剥离方法，其中所述的图案化光阻层具有高度，该图案化光阻层的该高度介于150μm至200μm之间。
前述的光刻胶剥离方法，其中所述的剥离步骤前包含有清洗步骤，以清除残留于该基板的背面的该化学液。
前述的光刻胶剥离方法，其中所述的剥离步骤后包含干燥步骤，以去除水分。
本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案，本发明光刻胶剥离方法可达到相当的技术进步性及实用性，并具有产业上的广泛利用价值，其至少具有下列优点：一种光刻胶剥离方法包含提供半导体基板，该半导体基板具有基板、焊垫、保护层、凸块下金属层、图案化光刻胶层及凸块，该焊垫位于该基板的表面，该保护层覆盖该基板及该焊垫，且该保护层具有开口，该开口显露该焊垫，该凸块下金属层覆盖该保护层，该凸块设置于该凸块下金属层上，该凸块具有一侧面，该图案化光刻胶层覆盖该凸块下金属层及该凸块的该侧面，且该图案化光刻胶层及该凸块的该侧面之间形成有第一接合界面，该图案化光刻胶层及该凸块下金属层之间形成有第二接合界面，其中该第一接合界面具有第一接合强度，该第二接合界面具有第二接合强度，接着，将该半导体基板浸泡至化学液中，使该化学液接触该图案化光刻胶层，且该化学液渗入该第一接合界面中，使该第一接合界面的该第一接合强度转变为第三接合强度，该第二接合界面的该第二接合强度转变为第四接合强度，其中该第三接合强度小于该第一接合强度，接着，以流体冲刷该半导体基板，该流体具有冲击力，该冲击力大于该第三接合强度及该第四接合强度，以使该图案化光刻胶层由该基板上剥离，以显露该凸块的该侧面及该凸块下金属层。本发明借由流体冲刷的方式剥离该图案化光刻胶层，可大幅减短该半导体基板浸泡于该化学液中的浸泡时间，使得该化学液的使用量下降而减少制作成本，且由于浸泡时间短可避免该半导体基板的该凸块或其他元件的损坏，以提升工艺的良率。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图，详细说明如下。
附图说明
图1是依据本发明的第一实施例，一种光刻胶剥离方法的流程图。
图2至图9是依据本发明的第一实施例，一半导体基板的侧面剖视图。
图10至图19是依据本发明的第二实施例，一半导体基板的侧面剖视图。
图20至图32是依据本发明的第三实施例，一半导体基板的侧面剖视图。
【符号说明】
10：光刻胶剥离方法11：提供半导体基板
12：形成凸块下金属层13：形成光刻胶层
14：图案化光刻胶层15：形成凸块
16：浸泡步骤17：清洗步骤
18：剥离步骤19：干燥步骤
20：凸块下金属层刻蚀100：半导体基板
110：基板111：表面
112：背面120：焊垫
130：保护层130A：保护层
130B：保护层131：开口
140：凸块下金属层140A：凸块下金属层
150：光刻胶层160：图案化光刻胶层
150A：图案化光刻胶层170：凸块
171：侧面180：线路层
S1：第一接合界面S2：第二接合界面
H1：高度H2：高度
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本发明提出的光刻胶剥离方法其具体实施方式、步骤、特征及其功效，详细说明如后。
请参阅图1，为本发明的第一实施例，一种光刻胶剥离方法10的流程图，请参阅图1及图2，在「提供半导体基板11」中提供半导体基板100，其中该半导体基板100具有基板110、焊垫120及保护层130，该焊垫120位于该基板110的表面111，该保护层130覆盖该基板110及该焊垫120，且该保护层130具有开口131，该开口131显露该焊垫120，该焊垫120可选自于铜、铝、铜合金或其他导电材料。
请参阅图1及图3，在「形成凸块下金属层12」中是以蒸镀、溅镀、电镀或无电镀的工艺在该保护层130上镀上凸块下金属层140，该凸块下金属层140覆盖该保护层130，且该凸块下金属层140连接该焊垫120，其中该凸块下金属层140可为多层金属层的结构，其包含黏着层(Adhesionlayer)、扩散阻碍层(Diffusionbarrierlayer)、润湿层(Wettinglayer)及抗氧化层(Oxidationbarrierlayer)，但本发明并不在此限。
请参阅图1及图4，在「形成光刻胶层13」中在该凸块下金属层140上形成光刻胶层150，该光刻胶层150以涂布及烘烤等工艺形成于该凸块下金属层140上，该光刻胶层150可选自于正光刻胶(positivephotoresist)或负光刻胶(negativephotoresist)。
请参阅图1、4及图5，在「图案化光刻胶层14」中以光罩作为屏蔽对该光刻胶层150进行曝光工艺(exposeprocess)，使该光刻胶层150的感光区域产生化学变化，接着在显影工艺(developingprocess)中以显影液移除不需要的光刻胶，而形成图案化光刻胶层160，该图案化光刻胶层160覆盖该凸块下金属层140，且该图案化光刻胶层160显露部分的该凸块下金属层140，其中该图案化光刻胶层160具有高度H1，在本实施例中，该图案化光刻胶层160的该高度H1介于150μm至200μm之间。
请参阅图1及图6，在「形成凸块15」中，是以蒸镀、溅镀、电镀、无电镀或印刷工艺形成凸块170在该图案化光刻胶层160中，该凸块170设置于该凸块下金属层140上，该凸块170用以使该焊垫120与另一基板(图未绘出)进行电性连接，该凸块170具有侧面171及高度H2，其中该图案化光刻胶层160覆盖该凸块170的该侧面171，该凸块170的该高度H2介于150μm至200μm之间，该凸块170可自于金、铜/镍、铜/镍/金、锡/银或其他导电金属。
请再参阅图6，该图案化光刻胶层160及该凸块170的该侧面171之间形成有第一接合界面S1，该图案化光刻胶层160及该凸块下金属层140之间形成有第二接合界面S2，其中该第一接合界面S1具有第一接合强度，该第二接合界面S2具有第二接合强度，由于此时该第一接合强度及该第二接合强度皆强，因此无法轻易将该图案化光刻胶层160由该半导体基板100上剥离。
请参阅图1及图7，在「浸泡步骤16」中将该半导体基板100浸泡至化学液中，该化学液接触该图案化光刻胶层160，使该图案化光刻胶层160产生化学变化，且该化学液渗入该第一接合界面S1中，使该第一接合界面S1的该第一接合强度转变为第三接合强度，该第二接合界面S2的该第二接合强度转变为第四接合强度，较佳的，该第三接合强度小于该第一接合强度，且该第四接合强度小于该第二接合强度。由于本发明在「浸泡步骤16」中并非要以该化学液剥离该图案化光刻胶层160，而是用以降低该图案化光刻胶层160与该凸块下金属层140及该凸块170之间的接合强度，因此，可大幅减短该半导体基板100在「浸泡步骤16」中浸泡该化学液的浸泡时间并减少该化学液的用量，较佳的，该浸泡时间介于1分钟至40分钟之间。
请参阅图1及图7，在「清洗步骤17」中以去离子水(DIW)或超纯水(UPW)清洗该半导体基板100，主要是用以清除残留于该基板110的背面112的该化学液，由于后续工艺中该半导体基板100会以机械手臂固定于该基板110的该背面112，若该化学液残留于该基板110的该背面112，将可能造成该半导体基板100的损坏。
请参阅图1及图8，在「剥离步骤18」中以喷嘴(图未绘出)喷出流体冲刷该半导体基板100，较佳的，该流体为二流体(two-phaseflow)，且该流体可选自于去离子水(DIW)混合氮气或二氧化碳，其中该喷嘴至该半导体基板100具有间距，该间距介于0.2公分至1公分之间，且该流体的流量介于3升/分钟至5升/分钟之间，使该流体具有冲击力，该冲击力大于该第三接合强度及该第四接合强度，以使该图案化光刻胶层160由该基板110上剥离，以显露该凸块170的该侧面171及该凸块下金属层140。由于在「浸泡步骤16」中已对该图案化光刻胶层160进行初步处理，因此，以该流体冲刷该半导体基板100的冲刷时间介于10秒至30秒之间即可将该图案化光刻胶层160由该基板110上剥离。
请参阅图1，在「干燥步骤19」中以IPA干燥或旋干的方式去除该半导体基板100上残留的水分。
请参阅图1及图9，在「凸块下金属层刻蚀20」中以该凸块170作为屏蔽对该凸块下金属层140刻蚀，而移除不需要的该凸块下金属层140，仅留下位于该凸块170下的该凸块下金属层140。
请参阅图10至图19，为本发明的第二实施例的制作流程，为一种1P2M工艺，其与第一实施例的差异在于其另具有保护层130A及线路层180，该保护层130A是在形成该凸块下金属层140前形成于该保护层130上，以确保该凸块下金属层140与该基板110之间的绝缘，且该保护层130A亦显露出该焊垫120，在本实施例中，该凸块下金属层140形成于该保护层130A上并电性连接该焊垫120。请参阅图13至图15，该线路层180借由图案化光刻胶层160A形成于该凸块下金属层140上以作为重分布线路层(RedistributionLayer)，其中在该线路层180形成于该凸块下金属层140后，亦可借由「浸泡步骤16」及「剥离步骤18」将该图案化光刻胶层160A剥离。相同地，请参阅图16至图18，借由该图案化光刻胶层160在该线路层180及该凸块下金属层140上形成该凸块170，并借由「浸泡步骤16」及「剥离步骤17」剥离该图案化光刻胶层160。在本实施例中，由于该图案化光刻胶层160A及该图案化光刻胶层160皆可借由「浸泡步骤16」及「剥离步骤18」进行剥离，因此，可大幅减少该化学液的使用量且避免该基板上110的微电路的损坏。
请参阅图20至图32，为本发明的第三实施例的制作流程，为一种2P2M工艺，其与第一实施例的差异在于其另具有保护层130A、线路层180、保护层130B及凸块下金属层140A，其中该保护层130A及该线路层180与第二实施例相同，分别作为绝缘层及重分布线路层。请参阅图27，在本实施例中，在形成该线路层180后，另形成该保护层130B在该线路层180上，以保护该线路层180，且该保护层130B显露该线路层180。请参阅图28至图31，在本实施例中，形成该凸块下金属层140A在该保护层130A上，以作为该凸块170及该保护层130A之间的黏着层，接着，借由该图案化光刻胶层160将该凸块170形成于该凸块下金属层140A上。请参阅图24及图30，在本实施例中，在分别借由该图案化光刻胶层160A及该图案化光刻胶层160形成该线路层180及该凸块170后，该图案化光刻胶层160A及该图案化光刻胶层160皆可借由「浸泡步骤16」及「剥离步骤17」进行剥离，以大幅减少该化学液的使用量且避免该基板110上的微电路的损坏。
此外，在3P3M、4P3M或多P多M的工艺中，皆可借由「浸泡步骤16」及「剥离步骤17」进行图案化光刻胶层的剥离，由于在多P多M的工艺需多道图案化光刻胶层的剥离工艺，因此，借由本发明的该光刻胶剥离方法10可节省更多的化学液用量，可减少制作的成本及降低环境的污染。
本发明借由流体冲刷的方式剥离该图案化光刻胶层160，可大幅减短该半导体基板100浸泡于该化学液中的该浸泡时间，使得该化学液的使用量下降而减少制作成本，且由于该浸泡时间短可避免该半导体基板100的该凸块170或其他组件的损坏，以提升工艺的良率。
以上所述，仅是本发明的较佳实施例而已，并非对本发明做任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (12)

1.一种光刻胶剥离方法，其包含：
半导体基板，该半导体基板具有基板、焊垫、保护层、凸块下金属层、图案化光刻胶层及凸块，该焊垫位于该基板的表面，该保护层覆盖该基板及该焊垫，且该保护层具有开口，该开口显露该焊垫，该凸块下金属层覆盖该保护层，该凸块设置于该凸块下金属层上，该凸块具有侧面，该图案化光刻胶层覆盖该凸块下金属层及该凸块的该侧面，且该图案化光刻胶层及该凸块的该侧面之间形成有第一接合界面，该图案化光刻胶层及该凸块下金属层之间形成有第二接合界面，其中该第一接合界面具有第一接合强度，该第二接合界面具有第二接合强度；
其特征在于提供该半导体基板进行以下步骤：
一、浸泡步骤，将该半导体基板浸泡至化学液中，使该化学液接触该图案化光刻胶层，且该化学液渗入该第一接合界面中，使该第一接合界面的该第一接合强度转变为第三接合强度，该第二接合界面的该第二接合强度转变为第四接合强度，其中该第三接合强度小于该第一接合强度；以及
二、剥离步骤，以流体冲刷该半导体基板，该流体具有冲击力，该冲击力大于该第三接合强度及该第四接合强度，以使该图案化光刻胶层由该基板上剥离，以显露该凸块的该侧面及该凸块下金属层。
2.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的第四接合强度小于该第二接合强度。
3.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的流体为二流体。
4.根据权利要求3所述的光刻胶剥离方法，其特征在于其中所述的流体的流量介于3升/分钟至5升/分钟之间。
5.根据权利要求4所述的光刻胶剥离方法，其特征在于其中所述的剥离步骤中，是以喷嘴喷出该流体，且该喷嘴至该半导体基板具有间距，该间距介于0.2公分至1公分之间。
6.根据权利要求5所述的光刻胶剥离方法，其特征在于其中所述的流体冲刷该半导体基板具有冲刷时间，该冲刷时间介于10秒至30秒之间。
7.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的半导体基板浸泡至该化学液中具有浸泡时间，该浸泡时间介于1分钟至40分钟之间。
8.根据权利要求3所述的光刻胶剥离方法，其特征在于其中所述的流体可选自于去离子水混合氮气或二氧化碳。
9.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的凸块具有高度，该凸块的该高度介于150微米至200微米之间。
10.根据权利要求1或9所述的光刻胶剥离方法，其特征在于其中所述的图案化光刻胶层具有高度，该图案化光刻胶层的该高度介于150微米至200微米之间。
11.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的剥离步骤前包含有清洗步骤，以清除残留于该基板的背面的该化学液。
12.根据权利要求1所述的光刻胶剥离方法，其特征在于其中所述的剥离步骤后包含干燥步骤，以去除水分。
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Application publication date: 20160210