CN105319831B - 光掩模、光掩模的制造方法以及显示装置的制造方法 - Google Patents

光掩模、光掩模的制造方法以及显示装置的制造方法 Download PDF

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Publication number: CN105319831B
Authority: CN; China
Prior art keywords: photomask; pattern; mentioned; semi; film
Prior art date: 2014-07-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201510418721.9A

Other languages

English (en)

Chinese (zh)

Other versions

CN105319831A (zh

Inventor

今敷修久

吉川裕

菅原浩幸

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hoya Corp

Original Assignee

Hoya Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-07-17

Filing date

2015-07-16

Publication date

2019-11-12

2015-07-16 Application filed by Hoya Corp filed Critical Hoya Corp

2015-07-16 Priority to CN201910982223.5A priority Critical patent/CN110673436B/zh

2016-02-10 Publication of CN105319831A publication Critical patent/CN105319831A/zh

2019-11-12 Application granted granted Critical

2019-11-12 Publication of CN105319831B publication Critical patent/CN105319831B/zh

Status Active legal-status Critical Current

2035-07-16 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 66
238000012546 transfer Methods 0.000 claims abstract description 58
239000000758 substrate Substances 0.000 claims abstract description 56
238000002834 transmittance Methods 0.000 claims abstract description 22
238000010023 transfer printing Methods 0.000 claims description 32
238000000034 method Methods 0.000 claims description 23
239000000463 material Substances 0.000 claims description 22
230000008569 process Effects 0.000 claims description 17
229920002120 photoresistant polymer Polymers 0.000 claims description 16
MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
230000003287 optical effect Effects 0.000 claims description 15
238000001039 wet etching Methods 0.000 claims description 15
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239000000203 mixture Substances 0.000 claims description 6
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238000007254 oxidation reaction Methods 0.000 claims description 6
229910052750 molybdenum Inorganic materials 0.000 claims description 5
150000004767 nitrides Chemical class 0.000 claims description 5
229910052715 tantalum Inorganic materials 0.000 claims description 5
229910052719 titanium Inorganic materials 0.000 claims description 5
229910052735 hafnium Inorganic materials 0.000 claims description 4
229910052758 niobium Inorganic materials 0.000 claims description 4
229910052726 zirconium Inorganic materials 0.000 claims description 4
229910052710 silicon Inorganic materials 0.000 claims description 2
230000005540 biological transmission Effects 0.000 abstract description 75
230000007261 regionalization Effects 0.000 abstract 1
239000010408 film Substances 0.000 description 141
230000000052 comparative effect Effects 0.000 description 25
239000010410 layer Substances 0.000 description 14
230000000694 effects Effects 0.000 description 13
238000005530 etching Methods 0.000 description 13
239000004973 liquid crystal related substance Substances 0.000 description 5
239000004065 semiconductor Substances 0.000 description 5
VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
230000010363 phase shift Effects 0.000 description 4
YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
238000013461 design Methods 0.000 description 3
238000001312 dry etching Methods 0.000 description 3
239000012528 membrane Substances 0.000 description 3
238000004088 simulation Methods 0.000 description 3
238000004026 adhesive bonding Methods 0.000 description 2
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238000005516 engineering process Methods 0.000 description 2
238000005286 illumination Methods 0.000 description 2
230000003993 interaction Effects 0.000 description 2
239000012788 optical film Substances 0.000 description 2
238000012545 processing Methods 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
229910002651 NO3 Inorganic materials 0.000 description 1
NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
MXDSNPXKZCSARO-UHFFFAOYSA-N [Ne].[F].[O].[N].[C] Chemical compound [Ne].[F].[O].[N].[C] MXDSNPXKZCSARO-UHFFFAOYSA-N 0.000 description 1
230000003466 anti-cipated effect Effects 0.000 description 1
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238000003763 carbonization Methods 0.000 description 1
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238000006243 chemical reaction Methods 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
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238000001514 detection method Methods 0.000 description 1
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229910052723 transition metal Inorganic materials 0.000 description 1
150000003624 transition metals Chemical class 0.000 description 1
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Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

CN201510418721.9A 2014-07-17 2015-07-16 光掩模、光掩模的制造方法以及显示装置的制造方法 Active CN105319831B (zh)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CN201910982223.5A CN110673436B (zh)	2014-07-17	2015-07-16	光掩模、光掩模的制造方法以及显示装置的制造方法

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2014-146847		2014-07-17
JP2014146847A JP6581759B2 (ja)	2014-07-17	2014-07-17	フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201910982223.5A Division CN110673436B (zh)	2014-07-17	2015-07-16	光掩模、光掩模的制造方法以及显示装置的制造方法

Publications (2)

Publication Number	Publication Date
CN105319831A CN105319831A (zh)	2016-02-10
CN105319831B true CN105319831B (zh)	2019-11-12

Family

ID=55247536

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CN201510418721.9A Active CN105319831B (zh)	2014-07-17	2015-07-16	光掩模、光掩模的制造方法以及显示装置的制造方法
CN201910982223.5A Active CN110673436B (zh)	2014-07-17	2015-07-16	光掩模、光掩模的制造方法以及显示装置的制造方法

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CN201910982223.5A Active CN110673436B (zh)	2014-07-17	2015-07-16	光掩模、光掩模的制造方法以及显示装置的制造方法

Country Status (4)

Country	Link
JP (1)	JP6581759B2 (ja)
KR (3)	KR101837247B1 (ja)
CN (2)	CN105319831B (ja)
TW (3)	TWI651585B (ja)

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JP6259509B1 (ja) *	2016-12-28	2018-01-10	株式会社エスケーエレクトロニクス	ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6808665B2 (ja)	2017-03-10	2021-01-06	Hoya株式会社	表示装置製造用フォトマスク、及び表示装置の製造方法
JP7080070B2 (ja) *	2017-03-24	2022-06-03	Hoya株式会社	フォトマスク、及び表示装置の製造方法
JP6964029B2 (ja) *	2017-06-06	2021-11-10	Hoya株式会社	フォトマスク、及び、表示装置の製造方法
TWI659262B (zh) *	2017-08-07	2019-05-11	日商Ｈｏｙａ股份有限公司	光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法
TWI691608B (zh) *	2017-09-12	2020-04-21	日商Ｈｏｙａ股份有限公司	光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法
JP7383490B2 (ja) *	2020-01-07	2023-11-20	株式会社エスケーエレクトロニクス	フォトマスク

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- 2014-07-17 JP JP2014146847A patent/JP6581759B2/ja active Active
2015
- 2015-06-11 TW TW107103718A patent/TWI651585B/zh active
- 2015-06-11 TW TW108100864A patent/TWI690770B/zh active
- 2015-06-11 TW TW104118949A patent/TWI621907B/zh active
- 2015-07-10 KR KR1020150098602A patent/KR101837247B1/ko active IP Right Grant
- 2015-07-16 CN CN201510418721.9A patent/CN105319831B/zh active Active
- 2015-07-16 CN CN201910982223.5A patent/CN110673436B/zh active Active
2017
- 2017-10-11 KR KR1020170129263A patent/KR102168149B1/ko active IP Right Grant
2020
- 2020-10-14 KR KR1020200132749A patent/KR102195658B1/ko active IP Right Grant

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Also Published As

Publication number	Publication date
TWI621907B (zh)	2018-04-21
TWI690770B (zh)	2020-04-11
TW201921091A (zh)	2019-06-01
JP2016024264A (ja)	2016-02-08
KR102195658B1 (ko)	2020-12-28
CN105319831A (zh)	2016-02-10
TW201604643A (zh)	2016-02-01
KR102168149B1 (ko)	2020-10-20
CN110673436B (zh)	2023-10-27
CN110673436A (zh)	2020-01-10
KR20160010322A (ko)	2016-01-27
TW201816503A (zh)	2018-05-01
TWI651585B (zh)	2019-02-21
KR101837247B1 (ko)	2018-03-09
KR20200120599A (ko)	2020-10-21
JP6581759B2 (ja)	2019-09-25
KR20170117987A (ko)	2017-10-24

Legal Events

Date	Code	Title
2016-02-10	C06	Publication
2016-02-10	PB01	Publication
2016-03-09	C10	Entry into substantive examination
2016-03-09	SE01	Entry into force of request for substantive examination
2019-11-12	GR01	Patent grant
2019-11-12	GR01	Patent grant

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