CN105304664B - A kind of structure of cmos image sensor and preparation method thereof - Google Patents
A kind of structure of cmos image sensor and preparation method thereof Download PDFInfo
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- CN105304664B CN105304664B CN201510719251.XA CN201510719251A CN105304664B CN 105304664 B CN105304664 B CN 105304664B CN 201510719251 A CN201510719251 A CN 201510719251A CN 105304664 B CN105304664 B CN 105304664B
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Abstract
The present invention relates to semiconductor yields to promote field, more particularly to a kind of structure of cmos image sensor and preparation method thereof, utilize the principle of interference of light, method by controlling film thickness in the production process, so that the loss of reflected light is reduced, so that the intensity of transmitted light increases, very big help can be generated to product yield is improved.
Description
Technical field
The present invention relates to structures and its preparation that semiconductor yields promote field more particularly to a kind of cmos image sensor
Method.
Background technique
Semicon industry manufacture is maked rapid progress, and the manufacturing process of product increasingly refines.Various defects are to the good of product
Rate can generate killing, and the various factors of defect caused by improving also increasingly becomes the important hand that can promote semiconductor yields
Section.
As shown in Figure 1, for CMOS front-illuminated (the complementary gold of Complementary Metal Oxide Semiconducto
Belong to oxide semiconductor, referred to as CMOS) imaging sensor, the method for industry mainstream is to pass through quarter after passivation layer at present
The method of erosion forms a deep trouth 1, and then potting resin material is planarized in slot, then carries out filter 2 and lenticule 3
Manufacture, forms the imaging sensor of complete structure.Although the technology can reduce back segment dielectric interfaces and lead to anaclasis
The light source of cause is lost, but due to the requirement of production technology, must retain thin film 5 as deep etching on photodiode 4
Stop-layer to protect the surface of photodiode 4, the thickness of the film 5 is improper to can still result in light source loss.
Summary of the invention
In view of the above-mentioned problems, the present invention provides a kind of structures of cmos image sensor, which is characterized in that the structure
Including,
Photodiode area；
Contact etching barrier layer is formed in above the photodiode area；
Silicide exposure mask is formed in above the contact etching barrier layer；
At least two dielectric layers are formed in above the silicide exposure mask；
At least one medium interlayer, is formed between the dielectric layer；
Optical channel deep trouth is obtained by etching the dielectric layer with the medium interlayer；
Protect layer film, the entire product upper surface after being formed in deep etching.
Preferably, the structure of above-mentioned cmos image sensor, wherein the photodiode area further includes three kinds of pictures
Plain unit, respectively red pixel cell, green pixel cell and blue pixel cells.
Preferably, the structure of above-mentioned cmos image sensor, wherein the photodiode area of different colours
The thickness of the protection layer film after deep etching is identical.
Preferably, the structure of above-mentioned cmos image sensor, wherein the photodiode area of different colours
The thickness on the contact etching barrier layer before deep etching is identical.
A kind of preparation method of cmos image sensor, which is characterized in that the method includes providing two pole of photoelectricity
Area under control domain, in the contact etching barrier layer is arranged on the photodiode area；
A silicide exposure mask is deposited in contact etching barrier layer upper end, wherein silicide exposure mask contacts quarter with described
The overall thickness control for losing barrier layer is 1/4 of the wavelength greater than incident light source；
Silicide mask layer described in etched portions, wherein the silicide exposure mask and the contact etching after etching stop
The overall thickness of layer is 1/4 of the wavelength less than incident light source；
The dielectric layer is deposited in the silicide exposure mask layer surface Jing Guo etching processing, and with the silicide exposure mask
The dielectric layer, which is etched, for stop-layer forms the optical channel deep trouth；
It deposits to form the protection layer film in the entire product surface after etching processing, wherein the silicide is covered
The overall thickness of film, the contact etching barrier layer and the protection layer film is the 1/4 of the wavelength of incident light source.
Preferably, above-mentioned method, wherein the generation type of the silicide exposure mask is passivation.
Preferably, above-mentioned method, wherein the control mode of the thickness on the contact etching barrier layer is photoetching or quarter
Erosion.
Preferably, above-mentioned method, wherein the silicide exposure mask on the photodiode area, the contact
The overall thickness control mode of etching barrier layer and the protection layer film is vapor deposition.
Beneficial effect, the present invention relates to structures of a kind of cmos image sensor and preparation method thereof, utilize the interference of light
Principle, the method for the thickness by controlling film in the production process, so that the loss of reflected light is reduced, and then transmitted light is strong
Degree increases, and can generate very big help to product yield is improved.
Detailed description of the invention
Fig. 1 is a structure chart of existing cmos image sensor front-illuminated.
Fig. 2 is a structure chart of one embodiment of present invention cmos image sensor front-illuminated.
Fig. 3 is a structure chart of one embodiment of present invention cmos image sensor front-illuminated.
Fig. 4-8 is the structure chart of each process of one embodiment of present invention cmos image sensor front-illuminated.
Fig. 9 is the comparison diagram using the CMOS image sensor product of the present invention sensitivity of green light compared with prior art.
Specific embodiment
For light transmission film thickness it is improper caused by light source be lost problem, the present invention provides a kind of cmos image sensors
Structure, which is characterized in that the structure includes,
Photodiode area；
Contact etching barrier layer is formed in above the photodiode area；
Silicide exposure mask is formed in above the contact etching barrier layer；
At least two dielectric layers are formed in above silicide exposure mask；
At least one medium interlayer, is formed between dielectric layer；
Optical channel deep trouth is obtained by etch media layer and medium interlayer；
Protect layer film, the entire product upper surface after being formed in deep etching.
A kind of preparation method of cmos image sensor, which is characterized in that the method includes providing two pole of photoelectricity
Area under control domain, in the contact etching barrier layer is arranged on the photodiode area；
A silicide mask layer is deposited in contact etching barrier layer upper end, wherein silicide exposure mask is contacted with described
The overall thickness control of etching barrier layer is 1/4 of the wavelength greater than incident light source；
Silicide mask layer described in etched portions, wherein the silicide exposure mask and the contact etching after etching stop
The overall thickness of layer is 1/4 of the wavelength less than incident light source；
The dielectric layer is deposited in the silicide exposure mask layer surface Jing Guo etching processing, and with the silicide exposure mask
The dielectric layer, which is etched, for stop-layer forms the optical channel deep trouth；
It deposits to form the protection layer film in the entire product surface after etching processing, wherein the silicide is covered
The overall thickness of film, the contact etching barrier layer and the protection layer film is the 1/4 of the wavelength of incident light source.
A specific embodiment of the invention is further described with reference to the accompanying drawing.
As shown in Fig. 2, the present invention provides a kind of structures of cmos image sensor, comprising:
Photodiode area 6 is in bottommost；
Contact etching barrier layer 8 is formed in 6 top of photodiode area；
Silicide exposure mask 7 is formed in 8 top of contact etching barrier layer；
At least two dielectric layers 9 are formed in 7 top of silicide exposure mask；
At least one medium interlayer 10, is formed between dielectric layer 9；
Optical channel deep trouth 12 is obtained by etch media layer 9 and medium interlayer 10；
Protect layer film 11, the entire product upper surface after being formed in deep etching.
As shown in figure 3, a preferred embodiment, wherein photodiode area 6 further includes three kinds of pixel units, is
It Wei not red pixel cell 61, green pixel cell 62 and blue pixel cells 63.
As shown in figure 3, a preferred embodiment, wherein the silicide exposure mask 7 of different 6 tops of photodiode area
Thickness is different.
One preferred embodiment, wherein the protection after the deep etching of 6 top of photodiode area of different colours
The thickness of layer film 11 is identical.
One preferred embodiment, wherein the contact etching before the deep etching of the photodiode area 6 of different colours
The thickness on barrier layer is identical.
As shown in figures 3-8, a kind of preparation method of cmos image sensor, which is characterized in that this method comprises:
As shown in figure 4, photodiode area 13 is provided, in setting contact etching barrier layer on photodiode area 13
15；
As shown in figure 5, in contact etching barrier layer upper end deposit a silicide exposure mask 14, wherein silicide exposure mask 14 with
The overall thickness control on contact etching barrier layer 15 is 1/4 of the wavelength greater than incident light source；
As shown in fig. 6, etched portions silicide exposure mask 14, so that the silicide exposure mask 16 and contact etching after etching stop
The overall thickness of layer 15 is 1/4 of the wavelength less than incident light source；
As shown in fig. 7, in 16 surface metallization medium layer 17 of silicide exposure mask and dielectric distance 18 Jing Guo etching processing, and
It is that stop-layer etch media layer 17 and dielectric distance 18 form optical channel deep trouth 19 with silicide exposure mask 16；
As shown in figure 8, depositing to form protection layer film 19, wherein silication in the entire product surface after etching processing
The overall thickness of object exposure mask 16, contact etching barrier layer 15 and protection layer film 20 is the 1/4 of the wavelength of incident light source.
Preferably, the generation type of silicide exposure mask 16 is passivation.
Preferably, the control mode of the thickness on contact etching barrier layer 15 is photoetching or etching.
Preferably, the silicide exposure mask 16 of 13 top of photodiode area, contact etching barrier layer 15 and protective layer are thin
The overall thickness control mode of film 20 is vapor deposition.
Preferably, incident light source wavelength takes the average value of the light source colour wave-length coverage.
According to Fig. 9 using the CMOS image sensor product of the present invention sensitivity of green light compared with prior art
Comparison diagram can be seen that cover film and be better than with a thickness of the green light sensitivity of the cmos image sensor of 760A and repeatable accuracy
The prior art products of 260A, wherein 1/4 green wavelength is about 1100A.
In conclusion the present invention relates to semiconductor yields to promote field more particularly to a kind of knot of cmos image sensor
Structure and preparation method thereof, using the principle of interference of light, method by controlling film thickness in the production process, so that reflected light
Loss reduce so that the intensity of transmitted light increases, very big help can be generated to raising product yield.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific embodiment are given, based on present invention essence
Mind can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (8)
1. a kind of structure of cmos image sensor, which is characterized in that the structure includes:
Photodiode area；
Contact etching barrier layer is formed in above the photodiode area；
Silicide exposure mask is formed in above the contact etching barrier layer；
At least two dielectric layers are formed in above the silicide exposure mask；
At least one medium interlayer, is formed between the dielectric layer；
Optical channel deep trouth is obtained by etching the dielectric layer with the medium interlayer；
Protect layer film, the entire product upper surface after being formed in deep etching；
The overall thickness of the silicide exposure mask, the contact etching barrier layer and the protection layer film is the wavelength of incident light source
1/4.
2. the structure of cmos image sensor according to claim 1, which is characterized in that the photodiode area is also
Including three kinds of pixel units, not to be red pixel cell, green pixel cell and blue pixel cells.
3. the structure of cmos image sensor according to claim 1, which is characterized in that the photoelectricity two of different colours
The thickness of the protection layer film after the deep etching in pole pipe region is identical.
4. the structure of cmos image sensor according to claim 1, which is characterized in that the photoelectricity two of different colours
The thickness on the contact etching barrier layer before the deep etching in pole pipe region is identical.
5. a kind of preparation method of cmos image sensor, which is characterized in that the described method includes:
Photodiode area is provided, in setting contact etching barrier layer on the photodiode area；
A silicide mask layer is deposited in contact etching barrier layer upper end, wherein silicide exposure mask and the contact etching
The overall thickness control on barrier layer is 1/4 of the wavelength greater than incident light source；
Silicide mask layer described in etched portions, wherein the silicide exposure mask and the contact etching barrier layer after etching
Overall thickness is 1/4 of the wavelength less than incident light source；
In the silicide exposure mask layer surface metallization medium layer Jing Guo etching processing, and using the silicide exposure mask as stop-layer
It etches the dielectric layer and forms optical channel deep trouth；
It deposits to form protection layer film in the entire product surface after etching processing, wherein the silicide exposure mask, described
The overall thickness of contact etching barrier layer and the protection layer film is the 1/4 of the wavelength of incident light source.
6. the preparation method of cmos image sensor according to claim 5, which is characterized in that the silicide exposure mask
Generation type is passivation.
7. the preparation method of cmos image sensor according to claim 5, which is characterized in that the contact etching stops
The control mode of the thickness of layer is photoetching or etching.
8. the preparation method of cmos image sensor according to claim 5, which is characterized in that the photodiode region
The overall thickness control mode of the silicide exposure mask, the contact etching barrier layer and the protection layer film on domain is gas phase
Deposition.
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