CN106409854B - Method and structure for improving red light quantum efficiency of front-illuminated CMOS image sensor - Google Patents
Method and structure for improving red light quantum efficiency of front-illuminated CMOS image sensor Download PDFInfo
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- CN106409854B CN106409854B CN201610985910.9A CN201610985910A CN106409854B CN 106409854 B CN106409854 B CN 106409854B CN 201610985910 A CN201610985910 A CN 201610985910A CN 106409854 B CN106409854 B CN 106409854B
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- red light
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 27
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 68
- 239000010408 film Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
The invention provides a method and a structure for improving red light quantum efficiency of a front-illuminated CMOS image sensor. The method for improving the red light quantum efficiency of the front-illuminated CMOS image sensor comprises the following steps: the first step is as follows: etching the silicon dioxide layer of the barrier layer of the metal silicide by using a mask plate for defining the red light sensitive area as an open mask plate before the etching barrier layer of the contact hole is grown, completely etching and removing the barrier layer of the metal silicide of the red light sensitive area, and exposing the silicon substrate of the red light sensitive area; the second step is as follows: and growing a contact hole etching barrier layer.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to the improvement of the photosensitive efficiency of a CMOS image sensor; more particularly, the present invention relates to a method for improving red light quantum efficiency of a front-illuminated CMOS image sensor and a corresponding CMOS image sensor structure.
Background
At present, the mainstream front-illuminated CMOS image sensor is a conventional CMOS logic circuit manufacturing process because the manufacturing technology applied to the peripheral circuit is the conventional CMOS logic circuit manufacturing process, so the thin film layers above the silicon substrate of the photodiode photosensitive region are typically SAB (silicide blocking layer) silicon dioxide (blocking layer for metal silicide)/CESL (contact etch blocking layer) silicon nitride (for contact etch blocking layer, here also silicon oxynitride/ILD (interlayer dielectric) silicon dioxide (for isolating the active region from the metal layer), light is transmitted to the photodiode region on the silicon substrate surface, and needs to penetrate these layers, a part of the illumination intensity is lost due to the refraction and reflection of the interface layer, and the amount of the loss is determined by the thickness and refractive index of these thin film layers, and the film thickness and refractive index of these three layers are usually determined by the standard process of logic circuit, i.e. the process of the different logic circuits determines the amount of loss of the incident light.
Therefore, it is desirable to provide a method for improving the red light quantum efficiency of a front-illuminated CMOS image sensor.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method capable of improving the red light quantum efficiency of a front-illuminated CMOS image sensor aiming at the defects in the prior art.
In order to achieve the above technical object, according to the present invention, there is provided a method of improving red light quantum efficiency of a front-illuminated CMOS image sensor, comprising:
the first step is as follows: etching the silicon dioxide layer of the barrier layer of the metal silicide by using a mask plate for defining the red light sensitive area as an open mask plate before the etching barrier layer of the contact hole is grown, completely etching and removing the barrier layer of the metal silicide of the red light sensitive area, and exposing the silicon substrate of the red light sensitive area;
the second step is as follows: and growing a contact hole etching barrier layer.
Preferably, in the first step, the green light sensitive area and the blue light sensitive area are defined as not opened in the mask plate, that is, when the barrier layer silicon dioxide layer of the metal silicide is etched, the barrier layer of the metal silicide of the green light sensitive area and the blue light sensitive area is not etched and removed, and the silicon substrate of the green light sensitive area and the blue light sensitive area is not exposed.
Preferably, in the second step, the parameters of the film growth process are adjusted so that the refractive index of the etching barrier layer of the contact hole of the red light sensitive area is between 2.24 +/-3%.
Preferably, in the second step, the thickness of the etching barrier layer of the contact hole of the red light sensitive area is betweenIn the meantime.
Preferably, in the second step, the contact hole etching barrier layer of the red light sensitive area is directly formed on the silicon substrate.
Preferably, in the second step, the contact hole etching barrier layer of the green light-sensitive area and the blue light-sensitive area is formed on the barrier layer of the metal silicide.
In order to achieve the above technical object, according to the present invention, there is also provided a front-illuminated CMOS image sensor structure, comprising: a red light sensitive area, a green light sensitive area and a blue light sensitive area; the red light sensitive area comprises a contact hole etching barrier layer directly formed on the silicon substrate, and the green light sensitive area and the blue light sensitive area comprise a metal silicide barrier layer directly formed on the silicon substrate and a contact hole etching barrier layer directly formed on the metal silicide barrier layer.
Preferably, the refractive index of the etching barrier layer of the contact hole of the red light sensitive area is between 2.24 +/-3%.
Preferably, the thickness of the etching barrier layer of the contact hole of the red light sensitive area is betweenIn the meantime.
According to the invention, the red light quantum efficiency of the front-illuminated CMOS image sensor is improved by improving the structure, the refractive index and the thickness of the film above the red light photodiode.
Drawings
A more complete understanding of the present invention, and the attendant advantages and features thereof, will be more readily understood by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:
fig. 1 schematically shows a flow chart of a method for improving red light quantum efficiency of a front-illuminated CMOS image sensor according to a preferred embodiment of the present invention.
Fig. 2 schematically shows a schematic diagram of a front-illuminated CMOS image sensor structure according to a preferred embodiment of the present invention.
It is to be noted, however, that the appended drawings illustrate rather than limit the invention. It is noted that the drawings representing structures may not be drawn to scale. Also, in the drawings, the same or similar elements are denoted by the same or similar reference numerals.
Detailed Description
In order that the present disclosure may be more clearly and readily understood, reference will now be made in detail to the present disclosure as illustrated in the accompanying drawings.
According to the invention, the red light quantum efficiency of the front-illuminated CMOS image sensor is improved by improving the structure, the refractive index and the thickness of the film above the red light photodiode.
In particular, fig. 1 schematically shows a flow chart of a method for improving red light quantum efficiency of a front-illuminated CMOS image sensor according to a preferred embodiment of the present invention.
As shown in fig. 1, a method for improving red light quantum efficiency of a front-illuminated CMOS image sensor according to a preferred embodiment of the present invention includes:
first step S1: etching the silicon dioxide layer of the barrier layer of the metal silicide by using a mask plate for defining the red light sensitive area as an open mask plate before the etching barrier layer of the contact hole is grown, completely etching and removing the barrier layer of the metal silicide of the red light sensitive area, and exposing the silicon substrate of the red light sensitive area;
in the first step S1, the green light sensitive area and the blue light sensitive area are defined as not opened in the mask, that is, when the barrier layer silicon dioxide layer of the metal silicide is etched, the barrier layer of the metal silicide in the green light sensitive area and the blue light sensitive area is not etched and removed, and the silicon substrate in the green light sensitive area and the blue light sensitive area is not exposed.
Second step S2: and growing a contact hole etching barrier layer.
Preferably, in the second step S2, the parameters of the film growth process are adjusted so that the refractive index of the etching barrier layer of the contact hole of the red light-sensitive region is between 2.24 ± 3%.
Also preferably, in the second step S2, the thickness of the etching barrier layer of the contact hole in the red light-sensitive region is betweenIn the meantime.
In the second step S2, the contact hole etch stop layer 300 for the red light sensing region is formed directly on the silicon substrate 100. Also, in the second step S2, contact hole etch barriers for the green and blue light-sensitive areas are formed on the barrier layer 200 of metal silicide, as shown in fig. 2.
The parameters of the proposed solution are the best results of theoretical derivation, and the theoretical model is that light enters the silicon substrate through two dielectric layers, assuming that the refractive index of the first dielectric layer is N1, the film thickness is T1, the refractive index of the second dielectric layer is N2, the film thickness is T2, and the refractive index of the silicon substrate is 3.44 (considered as known). Considering that the horizontal component of an incident light beam with the wavelength of lambda does not contribute to the sensitization, the model only considers that the incident light beam enters the photodiode through the vertical thin film layerIdeally, i.e., at an incident angle of 0 deg.C, the reflectance of the available light from medium one to medium two is expressed as
The reflectivity from dielectric two to the silicon substrate is expressed as
The total reflectivity of the two interfaces can be expressed as
Substituting (1) and (2) into (3) can be obtained
When R takes the minimum value, the expression is
According to the formula (5), whenThe reflectivity is 0, i.e. no reflection losses.
For the conventional structure of silicide barrier silicon dioxide layer/contact hole etching barrier layer/silicon dioxide layer, N is21.46, this condition N is satisfied10.61 is required, and no such substance is known to exist at present; however, if the structure is a contact hole etching barrier layer/silicon dioxide layer, N is11.46, satisfy formula (6), N2The traditional contact hole etching barrier layer can meet the requirement by adjusting process parameters, and then N is added2Substituting into (4) to obtain T2The value of (A), i.e., the value of the film thickness of the contact hole etching stopper layer in the absence of reflection, T can be calculated by considering that the peak wavelength of red light is 650nm2Is composed of
For example, for a cis (cmos Image sensor) process, the thickness of the silicon dioxide of the barrier layer of the metal silicide is X, after the silicide is deposited and cleaned, a photolithography process is added before the growth of the etching barrier layer of the contact hole, the process defines the area sensitive to red light as the area opened after developing the photoresist, the other areas of the photoresist are the areas reserved after developing, the thickness of the photoresist needs to be enough to completely block the silicon dioxide with the thickness of X by dry etching, and a certain margin is left, and then the etching process is carried out, so that the silicon dioxide film above the red light sensor is completely etched to expose the silicon substrate. The pre-cleaning process before the growth of the contact hole etching barrier layer is carried out after the photoresistance is removed, which mainly comprises the steps of removing the natural oxidation layer above the red light sensor, and then growing a layer with the thickness of film The contact hole etching barrier layer with the refractive index of 2.24 +/-3%; and then growing silicon dioxide of the active region and the metal isolation layer.
Compared with the traditional front-illuminated CMOS sensor, the structure of the thin film layer above the red light, the green light and the blue light is the same, and the thin film structure above the red light is independently defined by using an additional layer of mask plate and an etching process. The structure sequence of the thin film layer above the red light sensor is adjusted to be 'a contact hole etching barrier layer/a silicon dioxide layer', and green light and blue light regions keep the traditional structure unchanged, namely 'a silicide barrier silicon dioxide layer/a contact hole etching barrier layer/a silicon dioxide layer'. The refractive index of the contact hole etching barrier layer is required to be 2.24 +/-3%, and the film thickness of the contact hole etching barrier layer is required to be
In addition, it should be noted that the terms "first", "second", "third", and the like in the specification are used for distinguishing various components, elements, steps, and the like in the specification, and are not used for indicating a logical relationship or a sequential relationship between the various components, elements, steps, and the like, unless otherwise specified or indicated.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
It is to be further understood that the present invention is not limited to the particular methodology, compounds, materials, manufacturing techniques, uses, and applications described herein, as such may, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "an element" means a reference to one or more elements and includes equivalents thereof known to those skilled in the art. Similarly, as another example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. Thus, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Structures described herein are to be understood as also referring to functional equivalents of such structures. Language that can be construed as approximate should be understood as such unless the context clearly dictates otherwise.
Moreover, implementation of the method and/or system of embodiments of the present invention may include performing the selected task manually, automatically, or in combination. Moreover, the actual instrumentation and equipment according to embodiments of the method and/or system of the present invention may utilize an operating system to accomplish several selected tasks either in hardware, software, or a combination thereof.
Claims (3)
1. A method for improving the red light quantum efficiency of a front-illuminated CMOS image sensor is characterized by comprising the following steps:
the first step is as follows: etching the silicon dioxide layer of the barrier layer of the metal silicide by using a mask plate for defining the red light sensitive area as an open mask plate before the etching barrier layer of the contact hole is grown, completely etching and removing the barrier layer of the metal silicide of the red light sensitive area, and exposing the silicon substrate of the red light sensitive area;
in the first step, the green light sensitive area and the blue light sensitive area are defined as not opened in the mask plate, namely when the barrier layer silicon dioxide layer of the metal silicide is etched, the barrier layers of the metal silicide of the green light sensitive area and the blue light sensitive area are not etched and removed, and the silicon substrates of the green light sensitive area and the blue light sensitive area are not exposed;
the second step is as follows: growing a contact hole etching barrier layer;
in the second step, parameters of a film growth process are adjusted to enable the refractive index of the etching barrier layer of the contact hole of the red light sensitive area to be between 2.24 +/-3%;
in the second step, the thickness of the etching barrier layer of the contact hole of the red light sensitive area is betweenTo (c) to (d);
in the second step, the etching barrier layer of the contact hole of the red light sensitive area is directly formed on the silicon substrate.
2. The method of improving red quantum efficiency of a front-illuminated CMOS image sensor as claimed in claim 1, wherein in the second step, the contact hole etch barrier layer of the green light-sensitive area and the blue light-sensitive area is formed on the barrier layer of the metal silicide.
3. A front-illuminated CMOS image sensor structure, comprising: a red light sensitive area, a green light sensitive area and a blue light sensitive area; the red light sensitive area comprises a contact hole etching barrier layer directly formed on a silicon substrate, and the green light sensitive area and the blue light sensitive area comprise a metal silicide barrier layer directly formed on the silicon substrate and a contact hole etching barrier layer directly formed on the metal silicide barrier layer; the refractive index of the etching barrier layer of the contact hole of the red light sensitive area is between 2.24 +/-3%; the thickness of the contact hole etching barrier layer of the red light sensitive area is betweenIn the meantime.
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|---|---|---|---|---|
| KR20100030812A (en) * | 2008-09-11 | 2010-03-19 | 주식회사 동부하이텍 | Method for fabricating of cmos image sensor |
| CN101834196A (en) * | 2009-03-12 | 2010-09-15 | 索尼公司 | Solid-state image pickup apparatus and manufacture method thereof and image pick-up device |
| CN102024832A (en) * | 2009-09-09 | 2011-04-20 | 三星电子株式会社 | Anti-reflective image sensor |
| CN105304664A (en) * | 2015-10-29 | 2016-02-03 | 上海华力微电子有限公司 | CMOS image sensor structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4318007B2 (en) * | 1999-10-07 | 2009-08-19 | 富士フイルム株式会社 | Solid-state image sensor |
| US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
| JP2009295918A (en) * | 2008-06-09 | 2009-12-17 | Panasonic Corp | Solid-state imaging apparatus, and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100030812A (en) * | 2008-09-11 | 2010-03-19 | 주식회사 동부하이텍 | Method for fabricating of cmos image sensor |
| CN101834196A (en) * | 2009-03-12 | 2010-09-15 | 索尼公司 | Solid-state image pickup apparatus and manufacture method thereof and image pick-up device |
| CN102024832A (en) * | 2009-09-09 | 2011-04-20 | 三星电子株式会社 | Anti-reflective image sensor |
| CN105304664A (en) * | 2015-10-29 | 2016-02-03 | 上海华力微电子有限公司 | CMOS image sensor structure and preparation method thereof |
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