CN102593138B - CMOS image sensor and manufacturing method thereof - Google Patents
CMOS image sensor and manufacturing method thereof Download PDFInfo
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- CN102593138B CN102593138B CN201210018146.XA CN201210018146A CN102593138B CN 102593138 B CN102593138 B CN 102593138B CN 201210018146 A CN201210018146 A CN 201210018146A CN 102593138 B CN102593138 B CN 102593138B
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- image sensor
- layer
- metal
- cmos image
- incident light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000002310 reflectometry Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 8
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000035547 immunodeficiency 105 Diseases 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a CMOS (Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method of the CMOS image sensor. The CMOS image sensor comprises high-refractive index films and two layers of metal connecting wires, wherein the high-refractive index films for shielding incident light are arranged on the four sides and at the top part of each of the two layers of metal connecting wires. The manufacturing method comprises the steps of implanting As or P ions into a substrate material on the silicon substrate material to form an N-type photoelectric diode; etching the substrate material between photoelectric diodes by using a corrosion process and filling to form shallow trench isolation; depositing a media layer and a metal layer on the substrate surface layer by layer, and taking a composite layer as the media layer of metal; corroding a media material on the surface of the photoelectric diode to form a groove side wall and a groove shape, and forming a layer of high-reflectivity film on the groove side wall and the upper surface of the media outside a groove; and depositing a colorful filter material in the groove and making a micro lens on the colorful filter material. According to the invention, the crosstalk caused by reflection of the incident light between the metal is avoided, and the distance from the incident light to the pixel surface is shortened.
Description
Technical field
The present invention relates to the manufacture method of a kind of cmos image sensor and cmos image sensor, belong to image sensor technologies field.
Background technology
The extensive use of modern imageing sensor is ordered about cmos image sensor to more and more less size development.Along with dwindling of Pixel Dimensions, the parameter such as closely-related light sensitive diode electric capacity, sensitivity, quantum efficiency is faced with stern challenge with it.Therefore, make method or equipment that light can more effectively be absorbed by light sensitive diode become one of key factor of small-sized pixel image quality.
The traditional cmos image sensor dot structure of three-layer metal (take be example) as shown in Figure 1, on P type backing material 100 by photoetching, Implantation, traditional integrated circuit fabrication process such as corrosion and diffusion forms photodiode 102, between photodiode, by shallow trench isolation (STI) 101 structures, isolates.By the metal wire of sputtering technology formation control signal on photodiode 102.By chemical vapor deposition (CVD) technique, form dielectric layer as metal and metal, the separator of metal and silicon.Photodiode 102 surfaces dielectric layer is from bottom to top ILD-Si
3n
4103a, ILD-SiO
2103b, an IMD105, the 2nd IMD107, the 3rd IMD109a and passivation layer-Si
3n
4109b, wherein passivation layer-Si
3n
4109b has two effects, and the one, protection surface, the 2nd, as the flatness layer of colorful optical filter array 111a and 111b.Between dielectric layer, distributing and controlling the first metal wire metal106, the second metal wire metal108, the 3rd metal wire metal110 of photodiode 102 normal work, wherein the first metal wire metal106 is connected with the device forming on P type epitaxial loayer 100 by contact hole 104.The important part of imageing sensor another one is colorful optical filter array (color filter array) 111a and 111b, its effect is that incident light is resolved into three kinds of basic monochromatic light of red, green, blue, is lenticule (micro lens) 112 on color filter array.
The incident light of traditional imageing sensor is at the larger optically denser medium Si of refractive index
3n
4the optically thinner medium SiO that 109b and refractive index are less
2during the interface of 109a, by there is total reflection, (refractive index of Color filter material is about 1.5 to incident light, dielectric material SiO
2refractive index is about 1.45, Si
3n
4refractive index is about 2.0), thus the utilance of incident light affected.Secondly, conventional image sensor from lenticule (micro lens) 112 bottoms to the total dielectric thickness of the upper surface of photodiode 102 about more than 2 microns, so long path channels is unfavorable for that incident light effectively arrives pixel surface, and traditional image sensor architecture cannot avoid incident light to arrive metal surface or side, as the incident light 103 in Fig. 1 causes and crosstalks through the adjacent photodiode surface of the final arrival of metallic reflection.In addition, dielectric layer (ILD-SiO
2103b, an IMD105, the 2nd IMD107, the 3rd IMD109a) although be all SiO
2material, but in actual integrated circuit technology processing procedure, the deposit of dielectric layer usually adopts different chemical vapor depositions (CVD) equipment and method to complete, as plasma chemical vapor deposition (PECVD), low-temperature gaseous phase chemical deposition (LPCVD) etc.Therefore, dielectric layer is actual is a kind of special composite bed, and the refractive index in layer exists small difference, when incident light process composite bed, reflection in various degree can occur.
Summary of the invention
The invention provides the manufacture method of a kind of cmos image sensor and cmos image sensor, can effectively incident light be guided to the surface of photodiode, thereby sensitivity and the quantum efficiency of photodiode have been improved, this structure sensitization passage and flatness layer have suppressed to reflect in the medium of incident light outside passage simultaneously, thereby have effectively shielded crosstalking of light.
The object of the invention is to be achieved through the following technical solutions:
A cmos image sensor, comprises high reflectivity film and double layer of metal line, is arranged on surrounding and the top of double layer of metal line for the high reflectivity film of shielding incident light.
A manufacture method for cmos image sensor, comprising:
On silicon substrate material, by predetermined integrated circuit fabrication process, As or P implanted ions backing material are formed to N-type light sensitive diode;
Backing material between adjacent photodiode adopts etching process to etch open and use SiO
2material is filled and is formed shallow trench isolation;
At substrate surface successively dielectric layer deposited and metal level, at substrate material surface deposit one deck Si
3n
4as trapping layer and anti-reflection layer;
Adopt predetermined technique to make metal one and metal two, by Si
3n
4and SiO
2the composite bed forming, as the dielectric layer of metal level one, will be mixed with the SiO of boron and phosphorus
2dielectric layer as metal level two;
The dielectric material of photodiode surface is corroded to Si
3n
4upper surface, forms recess sidewall and groove shape, in described recess sidewall and groove external agency upper surface, forms one deck high reflectivity film;
Deposit colorized optical filtering sheet material make lenticule on colorized optical filtering sheet material in described groove.
As seen from the above technical solution provided by the invention, the high reflectivity film that the present invention adopts surrounds metal level, effectively avoided incident light in intermetallic reflection and crosstalking of causing, this structural images transducer only adopts double layer of metal line, and the metal connecting line of attenuate and dielectric layer have effectively shortened the distance on incident light arrival pixel surface.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is cmos image sensor photosensitive structure schematic diagram of the prior art;
The cmos image sensor structural representation that Fig. 2 provides for the specific embodiment of the invention;
Optical path of incident light schematic diagram in the cmos image sensor that Fig. 3 provides for the specific embodiment of the invention;
The cmos image sensor that Fig. 4-Fig. 7 provides for embodiment of the present invention is manufactured shaping schematic view step by step.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to protection scope of the present invention.
This embodiment provides a kind of cmos image sensor, as shown in Figure 2, comprises high reflectivity film 207 and double layer of metal line 204, is arranged on surrounding and the top of double layer of metal line 204 for the high reflectivity film 207 of shielding incident light.
Concrete, this embodiment is on the basis of traditional cmos image sensor, to adopt double layer of metal line 204, and metal connecting line 204 and dielectric layer all carry out attenuate, and therefore, the distance that incident light arrives photodiode surface can shorten 1um-2um.The surrounding of metal connecting line 204 and deposited on top one deck high reflectivity film 207, for shielding incident light because of crosstalking that metal layer reflection causes.The surface deposition of photodiode the Si that refractive index is relatively high
3n
4film 201 is as anti-reflection layer, and the colorful optical filter array 208 that distributing above anti-reflection layer is placed in colorful optical filter array 208 on the surface of photodiode 102, has avoided incident light to reflect in different medium on the one hand, and the while has also been simplified technique.And P type backing material 100, shallow trench isolation 101, photodiode 102, contact hole 202 and lenticule 209 in the cmos image sensor that this embodiment provides is identical with existing cmos image sensor in Fig. 1, at this, no longer applies and state.
In conjunction with Fig. 3 incident light schematic diagram, further illustrate the structure of the cmos image sensor of this embodiment, the first incident light 301 and the second incident light 302 are incident lights of two bundle diverse locations, the first incident light 301 incides the surface of high reflectivity film 207 through colorful optical filter array 208 with certain angle of inclination, thereby high reflectivity film 207 has high reflection reflects the first incident light 301, after reflection, light arrives colorful optical filter array material 208 and antireflective film Si
3n
4201a interface, boundary material Si
3n
4refractive index (being about 2.0) higher than the refractive index (being about 1.5) of colour filter array material, so light arrives photodiode 102 surfaces after refraction occurs at this interface.The second incident light 302 is with certain angular illumination above the high reflectivity film 207 of metal level top, and the high reflectivity film 207 of high reflectance reflects it, thereby suppressed incident light, arrives metal surface and side.
This embodiment also provides a kind of manufacture method of cmos image sensor, and concrete steps are as follows:
As shown in Figure 4, first selecting silicon substrate material 100, is generally extension doped with P type silicon on heavy doping P type silicon, by traditional integrated circuit fabrication process such as photoetching, injection, diffusions by As or the interior formation N-type photodiode 102 of P implanted ions backing material 100.Backing material between adjacent photodiode adopts etching process to etch open and use SiO
2material is filled and is formed shallow trench isolation 101; Secondly, at substrate surface successively dielectric layer deposited and metal level, as shown in Figure 5, and in order to prevent that silicon face from sustaining damage when follow-up contact hole 202 corrosion, need to be at the Si of the about 35-40nm of backing material 100 surface deposition
3n
4201a is as medium SiO
2trapping layer during 201b corrosion, simultaneously Si
3n
4201a also enters the anti-reflection layer of photodiode 102 as incident light.In order to make the covering that insulating barrier is smooth, need to be at SiO
2in 201b, add B or P to improve its mobility, in technique by Si
3n
4201a and SiO
2the composite bed that 201b forms is called inter-level dielectric (ILD), in order to the separator of polysilicon electrode and the insulating barrier of contact hole 202.On inter-level dielectric (ILD) surface, adopt the techniques such as sputter, photoetching, corrosion to form metal connecting line 204, through techniques such as deposit, photoetching, corrosion, form the insulating barrier 203 of isolating metal line 204, after photoetching, corrosion, on insulating barrier 203, form intercommunicating pore again, adopt metal connecting line 204 technique identical with insulating barrier 203 to form again successively again the second metal connecting line 206 and the second insulating barrier 205 from top to bottom.
Then, adopt dry etching that the dielectric material on photodiode 102 surfaces is corroded to Si
3n
4201a upper surface, as shown in Figure 6, this embodiment is defined as path channels by 601 to the structure after etching.Adopt again the techniques such as chemical vapor deposition and corrosion to form one deck high reflectivity film 207 at path channels 601 sidewalls and medium the second insulating barrier 205 upper surfaces, as shown in Figure 7.Last deposit colorized optical filtering sheet material in path channels 601, and make lenticule on colorized optical filtering sheet material, the cmos image sensor of making is as shown in Figure 2.
From the structure shown in Fig. 2, can find out, high reflectivity film layer surrounds metal connecting line, effectively avoided incident light in intermetallic reflection and crosstalking of causing, this structural images transducer adopts metal connecting line and the dielectric layer of attenuate, has effectively shortened the distance on incident light arrival pixel surface.The reflection that this structural images transducer has avoided incident light to cause because of medium refraction index difference the dielectric material of colour filter array material substitution traditional structure.The anti-reflection layer membrane shield on this structural images sensor pixel surface reflection of light, thereby improved the utilization ratio of incident light.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.
Claims (4)
1. a manufacture method for cmos image sensor, is characterized in that, comprising:
On silicon substrate material, by predetermined integrated circuit fabrication process, As or P implanted ions backing material are formed to N-type photodiode;
Backing material between adjacent photodiode adopts etching process to etch open and use SiO
2material is filled and is formed shallow trench isolation;
At substrate surface successively dielectric layer deposited and metal level, at substrate material surface deposit one deck Si
3n
4as trapping layer and anti-reflection layer;
Adopt predetermined technique to make metal one and metal two, by described Si
3n
4and SiO
2the composite bed forming, as the dielectric layer of metal level one, will be mixed with the SiO of boron and phosphorus
2dielectric layer as metal level two;
The dielectric material of photodiode surface is corroded to described Si
3n
4upper surface, forms recess sidewall and groove shape, in described recess sidewall and groove external agency upper surface, forms one deck high reflectivity film;
Deposit colorized optical filtering sheet material make lenticule on colorized optical filtering sheet material in described groove.
2. the manufacture method of cmos image sensor according to claim 1, is characterized in that, described silicon substrate material adopts extension doped with P type silicon on heavy doping P type silicon.
3. the manufacture method of cmos image sensor according to claim 1, is characterized in that, the Si of described substrate material surface deposit
3n
4thickness is 35-40nm.
4. the manufacture method of cmos image sensor according to claim 1, is characterized in that, for filling the SiO that forms shallow trench isolation
2in material, add B or P.
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| CN103000647B (en) * | 2012-10-25 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of CMOS image sensor optical enhancement structure and preparation method |
| CN104009048A (en) * | 2013-02-26 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor and preparation method thereof |
| CN103824868A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof |
| DE102015109549A1 (en) * | 2014-06-25 | 2015-12-31 | Ford Global Technologies, Llc | Proximity switch assembly with a groove between adjacent proximity sensors |
| CN107579166B (en) * | 2017-08-31 | 2024-04-12 | 京东方科技集团股份有限公司 | Display panel, display device and display panel manufacturing method |
| US10304885B1 (en) * | 2017-11-15 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter uniformity for image sensor devices |
| CN108336064B (en) * | 2018-01-30 | 2020-05-05 | 德淮半导体有限公司 | Test apparatus, method of manufacturing test apparatus, and test method |
| EP3686931B1 (en) * | 2018-11-23 | 2023-10-25 | Shenzhen Goodix Technology Co., Ltd. | Image sensor and manufacturing method therefor |
| CN109950263A (en) * | 2019-03-20 | 2019-06-28 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110649057B (en) * | 2019-09-30 | 2021-03-05 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
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| KR100906558B1 (en) * | 2007-11-05 | 2009-07-07 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing Thereof |
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