CN105296952B - Substrate temperature control method - Google Patents
Substrate temperature control method Download PDFInfo
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- CN105296952B CN105296952B CN201510737946.0A CN201510737946A CN105296952B CN 105296952 B CN105296952 B CN 105296952B CN 201510737946 A CN201510737946 A CN 201510737946A CN 105296952 B CN105296952 B CN 105296952B
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Abstract
The present invention relates to a kind of substrate temperature control method, for controlling substrate temperature-controlling system, the substrate temperature-controlling system includes：Vacuum chamber；Sample stage for placing substrate, is arranged in the vacuum chamber, and including the heater for being heated to the substrate；The circulating line being connected with the sample stage, is included an inlet and an outlet；Inert gas source, the porch of the circulating line is connected to by intake valve；Cooling-water machine water tank, the porch of the circulating line is connected to by water intaking valve；And the control unit electrically connected with the heater, intake valve and water intaking valve, when needing to heat the substrate, open the intake valve and keep the water intaking valve to close；When needing to cool to the substrate, open the water intaking valve and keep the intake valve to close.The present invention can be controlled to the temperature of substrate.
Description
Technical field
The present invention relates to a kind of temperature regulating device, more specifically to a kind of substrate temperature-controlling system and method.
Background technology
Making for they can be increased substantially in the surface deposition ganoine thin film of the multiple types of tools such as cutting tool and parts
With performance, therefore extensive use is obtained in the surface deposition film of instrument and parts.Physical vapour deposition (PVD) (Physical
Vapor Deposition, PVD) technology is the main method for preparing ganoine thin film.Physical method is used under vacuum, will
Material source is gasificated into gaseous atom, molecule, or partial ionization into ion, and by low-pressure gas or plasma, in substrate table
Face deposition film.PVD process exploitation, typically regulation technique prepare the ganoine thin film of heterogeneity, microstructure, and then
Obtain corresponding performance.
In the hard films that widely used PVD is deposited, often there is too high residual stress.In order to improve film base
The performance of system, it is necessary to this residual stress control in rational level.The temperature of substrate is the microcosmic of decision film
One key factor of tissue, and the microstructure of film has the influence of essence to its residual stress, therefore, inquires into substrate temperature
Influence to film microstructure, and then study its influenceing with very high application value to film residual stress.Existing
During technology prepares ganoine thin film, it will usually which substrate is heated, but without cooling measure, the higher plasma of temperature
Body falls on substrate, and the temperature of substrate can be caused to be increased to a few Baidu's specifications, according to classical Thornton models, deposition temperature
The microstructure spent for film has a significant impact, and then particularly significant to regulation film performance.Particularly, if passing through low temperature
Deposition ganoine thin film obtains non crystalline structure, then carries out Amorphous Crystallization, will obtain nanocrystalline, isometric crystal structure ganoine thin film, property
It can be clearly distinguishable from the ganoine thin film of conventional columnar crystal structure.
The content of the invention
The technical problem to be solved in the present invention is, is prepared for prior art during ganoine thin film not to substrate
The defect that is controlled of temperature there is provided a kind of substrate temperature-controlling system and method, the temperature of substrate can be controlled.
The technical solution adopted for the present invention to solve the technical problems is：A kind of substrate temperature-controlling system is constructed, including：
Vacuum chamber；
Sample stage for placing substrate, is arranged in the vacuum chamber, and including for being added to the substrate
The heater of heat；
The circulating line being connected with the sample stage, is included an inlet and an outlet；
Inert gas source, the porch of the circulating line is connected to by intake valve；
Cooling-water machine water tank, the porch of the circulating line is connected to by water intaking valve；And
The control unit electrically connected with the heater, intake valve and water intaking valve, when needing to heat the substrate, beats
Drive the intake valve and keep the water intaking valve to close；When needing to cool to the substrate, the opening water intaking valve and
The intake valve is kept to close.
According to substrate temperature-controlling system of the present invention, the sample stage includes the water cooling substrate for being used to place the substrate
Platform, for the heater that is heated to the water cooling chip bench and for fixing the water cooling chip bench and heating
Device and the mounting seat for being connected to inside the vacuum chamber, the heater are arranged on the water cooling chip bench and described
Between mounting seat, the substrate temperature-controlling system also includes the arc source being oppositely arranged with the water cooling chip bench.
According to substrate temperature-controlling system of the present invention, on the water cooling chip bench, provided with insulating sleeve connecting hole；Institute
State the insulating sleeve that sample stage also includes being plugged in the insulating sleeve connecting hole；The insulating sleeve by high thermal conductivity material
Material is made, and in the insulating sleeve, is fixedly installed temperature sensor.
According to substrate temperature-controlling system of the present invention, the sample stage also includes being arranged on the water cooling chip bench and institute
The insulation barrier between heater is stated, at the center of the insulation barrier, heating radiation hole is offered.
According to substrate temperature-controlling system of the present invention, the sample stage also includes being arranged on the heater and the peace
The heat reflector between base is filled, the heat reflector has the front openings towards the heater.
According to substrate temperature-controlling system of the present invention, on the left and right sides of the heat reflector, it is provided with for solid
Multiple recesses of the fixed heater, the two ends of the heater are respectively supported in the recess；The sample stage also includes
Two be in strip heater fixture, the heater fixture is press respectively against the two ends of the heater, and it is described plus
The two ends of hot device fixture are connected respectively on the corresponding side of the heat reflector.
According to substrate temperature-controlling system of the present invention, between the insulation barrier and the mounting seat, also set up
There is support distance piece, the support distance piece is fixedly connected with the two ends of the heater, and company is fixed with the mounting seat
Connect.
According to substrate temperature-controlling system of the present invention, it is provided with the mounting seat for the sample stage to be fixed
To the vertical support pin and horizontal support pin in the vacuum chamber, the horizontal support pin includes fixing with the sample stage and connected
The rotating connector connect and the horizontal support bar being connected with rotating connector rotation.
A kind of substrate temperature control method, for controlling above-described substrate temperature-controlling system, the described method comprises the following steps：
S1, according to the actual requirements, by target temperature SVNInput to described control unit；
The actual temperature PV and target temperature SV for the sample stage that S2, described control unit are relatively measuredN, and it is defeated accordingly
Go out current signal；
S3, described control unit are determined to the output voltage of the heater according to the current signal；
Wherein described step S2 includes：
If actual temperature PV is less than target temperature SVN, the described control unit control inlet open, the indifferent gas
Inert gas in body source enters from the circulating line, is persistently closed after the predetermined time；
If actual temperature PV is higher than target temperature SVN, the described control unit control water intaking valve unlatching, the cooling-water machine
Cooling water in water tank is entered by the circulating line, reaches the sample stage and it is cooled down.
A kind of substrate temperature control method, for controlling above-described substrate temperature-controlling system, the described method comprises the following steps：
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stages1-SVNInput to described control unit；
The relatively upper target temperature SV of S2, described control unitN-1With next target temperature SVN, and output current is believed accordingly
Number；
S3, described control unit are determined to the output voltage of the heater according to the current signal；
Wherein described step S2 includes：
If upper target temperature SVN-1Less than next target temperature SVN, the described control unit control inlet open,
Inert gas in the inert gas source enters from the circulating line, is persistently closed after the predetermined time；
If upper target temperature SVN-1Higher than next target temperature SVN, the described control unit control water intaking valve unlatching,
Cooling water in the cooling-water machine water tank is entered by the circulating line, reaches the sample stage and it is cooled down.
Implement the substrate temperature-controlling system and method for the present invention, have the advantages that：The temperature of substrate can be carried out
Accurate control, the sample stage where can not only causing substrate heats up, it can also be cooled, and then reaches on substrate
The purpose that the performance of the film of deposition is controlled.
Brief description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
Fig. 1 is the structural representation of substrate temperature-controlling system in the present invention；
Fig. 2 is the structural representation of sample stage in the present invention；
Fig. 3 is the decomposing schematic representation of sample stage in the present invention；
Fig. 4 is another decomposing schematic representation of sample stage in the present invention；
Fig. 5 is the block diagram of one embodiment of substrate temperature-controlling system in the present invention；
Fig. 6 is the block diagram of another embodiment of substrate temperature-controlling system in the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 is the structural representation of substrate temperature-controlling system 100 in the present invention.As shown in figure 1, the substrate temperature control system of the present invention
System 100 includes：Vacuum chamber 101, it is arranged in vacuum chamber 101 and sample stage 102 and sample stage including heater 108
The circulating lines 103 of 102 connections, the inert gas source at the entrance 103a of circulating line 103 is connected to by intake valve 104
105th, cooling-water machine water tank 107 and and heater at the entrance 103a of circulating line 103 are connected to by water intaking valve 106
108th, intake valve 104, water intaking valve 106 are electrically connected to the control unit 109 being controlled.When needing to heat substrate 110,
Open intake valve 104 and keep water intaking valve 106 to close；When needing to cool to substrate 110, open water intaking valve 106 and protect
Intake valve 104 is held to close.
Specifically, sample stage 102 is arranged in vacuum chamber 101, and substrate 110 is arranged on sample stage 102, true
The arc source 111 relative with sample stage 102 is provided with plenum chamber 101.Arc source 111 is used for sputter plasma to substrate
On 110, so that the deposition film on the surface of substrate 110.
Circulating line 103 is extended to outside vacuum chamber 101 inside vacuum chamber 101, by prolonging again after sample stage 102
Extend outside vacuum chamber 101, to be cooled down to sample stage 102.Circulating line 103 includes entrance 103a and outlet
103b, inert gas source 105 is connected at the entrance 103a of circulating line 103 by intake valve 104, cooling-water machine water tank 107
It is connected to by water intaking valve 106 at the entrance 103a of circulating line 103, the outlet 103b of circulating line 103 is connected to cooling-water machine
Water tank 107, so that the water to outflow re-starts cooling.But the invention is not restricted to this, the outlet 103b of circulating line 103
Cooling-water machine water tank 107 can be not connected to, and directly the water of outflow is reclaimed.Intake valve 104 and water intaking valve 106 are typically located
In closed mode.
In order to keep vacuum chamber 101 to be vacuum, insulating flange 112 is installed on vacuum chamber 101.Circulating line
103 from insulating flange 112 by and be fixed on insulating flange 112, it will be understood by those skilled in the art that due to circulation pipe
Road 103 to be circulating, so according to loop direction respectively on insulating flange 112 two at by and it is fixed.
When the temperature of sample stage 102 is too high needs cooling, the control water intaking valve 106 of control unit 109 is opened, cooling-water machine water
Water in case 107 enters from the entrance 103a of circulating line 103, reaches sample stage 102 and it is cooled down, return to afterwards cold
In water dispenser water tank 107, cooled down again by cooling-water machine.Reach after desired temperature, the control water intaking valve 106 of control unit 109 is closed.
When the temperature of sample stage 102 is too low needs heating, the control intake valve 104 of control unit 109 is opened, in inert gas source 105
Inert gas enter from the entrance 103a of circulating line 103, inert gas blows away the water in circulating line 103.This be for
When preventing that heating-up temperature is higher than the boiling point of water, the water of residual can become vapor, cause circulating line in circulating line 103
Pressure in 103 quickly increases, even causes rupture, and heating is adversely affected；It is also prevented from circulating line 103 simultaneously
The current of interior residual take away heat, reduction heating rate.Intake valve 104 was opened after the default time, the water in circulating line 103
It is enough to be blown away, control unit 109 closes intake valve 104.
Fig. 2 is the structural representation of sample stage 102 in the present invention；Fig. 3 is the exploded pictorial of sample stage 102 in the present invention
Figure；Fig. 4 is another decomposing schematic representation of sample stage 102 in the present invention.As in Figure 2-4, sample stage 102 includes being used to place base
The water cooling chip bench 113 of piece 110, for the heater 108 that is heated to water cooling chip bench 113 and for fixing water cooling
Chip bench 113 and heater 108 and the mounting seat 109 for being connected to inside vacuum chamber 101.
Specifically, water cooling chip bench 113 is made up of the good metal of thermal conductivity, preferably copper.In water cooling chip bench 113
Sinuous cooling pipe (not shown) is provided with, the cooling pipe is connected by water cooling inlet tube 114 and water cooling outlet 115
It is connected on circulating line 103.Water or inert gas in circulating line 103 enter water cooling substrate by water cooling inlet tube 114
Cooling pipe in platform 113, is flowed out by water cooling outlet 115 afterwards, and returns to outlet 103b by circulating line 103.
On preceding surface of the water cooling chip bench 113 just to arc source 111, substrate clamping part 116 is provided with.The substrate clamping
Part 116 is removably connected to two clamp clips on water cooling chip bench 113.Substrate 110 is placed into water cooling chip bench 113
After upper, substrate clamping part 116 is fastened on to the edge of substrate 110 using screw etc., substrate 110 is close to water cooling chip bench
On 113.
In the side of water cooling chip bench 113, bias plasma connecting hole 117 is provided with.In order to measure the temperature of water cooling chip bench 113
Spend and do not influenceed by the bias on water cooling chip bench 113, connected on the top surface of water cooling chip bench 113 provided with insulating sleeve
Hole 113a, insulating sleeve 120 is plugged in insulating sleeve connecting hole 113a by interference fit.It is fixed in insulating sleeve 120
Temperature sensor 130 is provided with, the temperature sensor 130 is insulated by insulating sleeve 120 with water cooling chip bench 113.Temperature is passed
Sensor 130 can be thermocouple.The higher ceramic material of the preferred thermal conductivity of insulating sleeve 120, such as beryllium oxide ceramics, aluminium nitride
Ceramics etc., the heat of water cooling chip bench 113 can be conducted rapidly so that the temperature that temperature sensor 130 is measured closely or
Person is equal to the temperature of water cooling chip bench 113.
On water cooling chip bench 113, multiple water cooling chip bench connecting holes 118 are additionally provided with.The water cooling chip bench connecting hole
118 run through water cooling chip bench 113.
Heater 108 is arranged between water cooling chip bench 113 and mounting seat 109.In this embodiment, heater
108 be many red heat fluorescent tubes that side by side parallel is set, but heater 108 can also be other forms.In heater 108 and water cooling
Between chip bench 113, insulation barrier 119 is provided with.Insulation barrier 119 causes water cooling chip bench 113 and other element insulatings, should
Insulation barrier 119 is preferably made up of ceramics.In order to not hinder heater 108 to heat water cooling chip bench 113, in insulation
The center of baffle plate 119, offers heating radiation hole 119b, and insulation barrier connecting hole 119a is additionally provided with insulation barrier 119.Should
Heating radiation hole 119b size is larger, it is sufficient to so that most heats of heater 108 are directly radiated water cooling chip bench
On 113.Insulation barrier 119 can be made up of such as ceramics.
The direction reflexed to for the heat for being sent heater 108 where water cooling chip bench 113, in heater 108
Between mounting seat 109, heat reflector 121 is provided with.In the present embodiment, the heat reflector 121 is in the vertical of front openings
Cube shape, its front openings towards heater 108.On the inner surface of heat reflector 121, metallic reflector is coated with.It is hot anti-
Emitter 121 can be made of metal.On the left and right sides of heat reflector 121, it is provided with for the multiple of fixed heater 108
Recess 121a and fixture connecting hole 121b.In the present embodiment, heater 108 in a tubular form, the two of multiple heaters 108
End is respectively supported in the corresponding recess 121a of the left and right sides of heat reflector 121.Water cooling chip bench 113 also includes two heating
Device fixture 122, the heater fixture 122 be in strip, including middle narrow portion 122a and from middle narrow portion 122a two
The wide portion 122b in two ends towards the direction extension where mounting seat 109, the wide portion 122b of both end of which is held to be provided with connecting hole.Two
The middle narrow portion 122a of individual heater fixture 122 is press respectively against the two ends of multiple heaters 108, and the wide portion 122b in two ends distinguishes
By fixture connecting hole 121b connection of the connector with the corresponding side of heat reflector 121, so that heater 108 is fixed on
On heat reflector 121.
In the illustrated embodiment, the quantity of heat reflector 121 is multiple, and specially three.This multiple heat reflector
121 structure is identical, but external dimensions diminishes successively, and nested successively., can be very as a result of multiple heat reflectors 121
Control heat well.But the invention is not restricted to this, can also be only with a heat reflector 121.
At the back side of the insulation barrier 119 away from water cooling chip bench 113, multiple connecting poles 123 are fixedly installed.Connecting pole
123 end is provided with external screw thread, and insulating sleeve is arranged with the outer surface of connecting pole 123.In heat reflector 121 away from insulation
In the back surface of baffle plate 119, provided with through connecting hole.The connecting pole 123 of insulation barrier 119 is passed through on heat reflector 121
Connecting hole, and be connected with the external screw thread of the end of connecting pole 123 using nut, so that heat reflector 121 is fixed on insulation stop
On plate 119.
In order to be supported to heater 108, between insulation barrier 119 and mounting seat 109, it is additionally provided between support
Spacing body 124.Distance piece 124 is supported to be located at the left and right sides of heat reflector 121.On support distance piece 124, having heaters is set
Connecting hole 125 and mounting seat connecting hole 126.The two ends of heater 108 are respectively supported at the left and right two of heat reflector 121
In the corresponding recess 121a of side, and extend at support distance piece 124, connecting hole 108a is provided with the two ends of heater 108.Adopt
After the connecting hole 108a that heater 108 is passed through with connector, it is connected with the heater connecting hole 125 on support distance piece 124.Separately
Outer use connector passes through mounting seat 109, and is connected with the mounting seat connecting hole 126 on support distance piece 124, so that will
Support distance piece 124 is fixed in mounting seat 109.
Sample stage 102 also includes sequentially passing through water cooling chip bench connecting hole 118, the insulation barrier on water cooling chip bench 113
The long connector 127 being connected after insulation barrier connecting hole 119a on 119 with mounting seat 109.Long connector 127 can be long
Bolt and the nut coordinated with its end.So cause water cooling chip bench 113, insulation barrier 119 and mounting seat 109
Sequentially connect, and heater 108 and heat reflector 121 are fixed between insulation barrier 119 and mounting seat 109.In order to exhausted
Edge, insulation sleeve is arranged with the long periphery of connector 127.
At the back side of mounting seat 109, vertical support pin 128 and horizontal support pin 129 are provided with.The vertical support pin
128 and horizontal support pin 129 be used for by whole sample stage 102 be fixed to vacuum chamber 101 in.The vertical support pin 128 includes L
The shape contiguous block 128a and vertical support bar 128b being connected with L-shaped contiguous block 128a.The wherein Part I of L-shaped contiguous block
The back side for being fixed on mounting seat 109 is posted, Part II is vertical with vertical support bar 128b to be connected.Horizontal support pin 129 is wrapped
Include post the connecting plate 129a for being fixed on the back side of mounting seat 109, the rotating connector 129b being connected on connecting plate 129,
And the horizontal support bar 129c being connected with rotating connector 129b, wherein rotating connector 129b quantity is two, both
From connecting plate 129a extension and toward each other, be equipped with rotating connector 129b rotation connecting hole 129d and around turn
Dynamic connecting hole 129d arcuate socket 129e.Horizontal support bar 129e end is rotatably coupled with rotating connecting hole 129d, together
When, the small convex pillar (not shown) coordinated with arcuate socket 129e is provided with horizontal support bar 129c, as horizontal support bar 129c
During rotation, small convex pillar is slided in arcuate socket 129e, by means of arcuate socket 129e length range limit levels support bar 129c
Rotational angle.
The correspondence inserted when sample stage 102 by means of vertical support pin 128 and horizontal support pin 129 in vacuum chamber 101
During fixing hole, sample stage 102 can be rotated in the horizontal direction according to the position of arc source 111 so that sample stage 102 is just to electricity
Arc edge 111.
Fig. 5 is the block diagram of one embodiment of substrate temperature-controlling system 100 in the present invention；Fig. 6 is substrate temperature control in the present invention
The block diagram of another embodiment of system 100.Substrate temperature control method utilizes substrate temperature-controlling system 100 of the invention.Wherein control
Unit 109 can include temperature controller 109a and power regulator 109b.Under the working condition of substrate temperature-controlling system 100, heating
Device 108 is always on.The substrate temperature control method is applied to include the situation in single temperature control stage and including multiple temperature control stages
Situation, in this multiple temperature control stage, in the different constant temperatures different time.
Specifically, in the case of the single temperature control stage, the substrate temperature control method includes step：
S1, according to the actual requirements, by target temperature SVNInput to temperature controller 109a；
Actual temperature PV and target temperature SV that S2, temperature controller 109a C.Ts sensor 130 are measuredN, and it is defeated accordingly
Go out current signal to power regulator 109b, the current signal can be 4-10mA current signal；
S3, power regulator 109b determine to the output voltage of heater 108 that the output voltage is to add according to current signal
The actual voltage value of hot device 108, the alternating current for being 0-220V.
Wherein step S2 further comprises：
If actual temperature PV is less than target temperature SVN, heat temperature raising is demonstrated the need for, the now control of control unit 109 air inlet
Valve 104 is opened, and the inert gas in inert gas source 105 enters from the entrance of circulating line 103, and inert gas is by circulating line
Water in 103 is blown away.Persistently closed after the predetermined time.The predetermined time can be such as 10 seconds.
If actual temperature PV is higher than target temperature SVN, demonstrate the need for cooling, the now control of control unit 109 water inlet
Valve 106 is opened, and the cooling water in cooling-water machine water tank 107 is entered by circulating line 103, reaches sample stage 102 and it is carried out
Cooling, is returned in cooling-water machine water tank 107 afterwards.The process cooled can continue in the whole temperature control stage.
In the case of including multiple (such as N number of) temperature control stages, the substrate temperature control method includes step：
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stages1-SVNWith the input of corresponding duration
To temperature controller 109a；
The relatively upper target temperature SV of S2, temperature controller 109aN-1With next target temperature SVN, and output current signal accordingly
To power regulator 109b, the current signal can be 4-10mA current signal；
S3, power regulator 109b determine to the output voltage of heater 108 that the output voltage is to add according to current signal
The actual voltage value of hot device 108, the alternating current for being 0-220V.
Wherein step S2 further comprises：
If next target temperature SVNLess than upper target temperature SVN-1, heat temperature raising is demonstrated the need for, now control unit
109 control intake valves 104 are opened, and the inert gas in inert gas source 105 enters from the entrance of circulating line 103, indifferent gas
Body blows away the water in circulating line 103.Persistently closed after the predetermined time.The predetermined time can be such as 10 seconds.
If next target temperature SVNHigher than upper target temperature SVN-1, demonstrate the need for cooling, now control unit
109 control water intaking valves 106 are opened, and the cooling water in cooling-water machine water tank 107 is entered by circulating line 103, reaches sample stage 102
And it is cooled down, return to afterwards in cooling-water machine water tank 107.The process cooled can continue in the whole temperature control stage.
Using the substrate temperature-controlling system 100 and method of the present invention, the temperature of substrate 110 can accurately be controlled, no
Sample stage 102 where substrate 110 can only be caused heats up, it can also be cooled, and then reaches to being sunk on substrate 110
The purpose that the performance of long-pending film is controlled.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (2)
1. a kind of substrate temperature control method, for controlling substrate temperature-controlling system, it is characterised in that the substrate temperature-controlling system includes：
Vacuum chamber；
Sample stage for placing substrate, is arranged in the vacuum chamber, and including being used for what the substrate was heated
Heater；
The circulating line being connected with the sample stage, is included an inlet and an outlet；
Inert gas source, the porch of the circulating line is connected to by intake valve；
Cooling-water machine water tank, the porch of the circulating line is connected to by water intaking valve；And
The control unit electrically connected with the heater, intake valve and water intaking valve, when needing to heat the substrate, opens institute
State intake valve and keep the water intaking valve to close；When needing to cool to the substrate, the water intaking valve and holding are opened
The intake valve is closed；
It the described method comprises the following steps：
S1, according to the actual requirements, by target temperature SVNInput to described control unit；
The actual temperature PV and target temperature SV for the sample stage that S2, described control unit are relatively measuredN, and electricity is exported accordingly
Flow signal；
S3, described control unit are determined to the output voltage of the heater according to the current signal；
Wherein described step S2 includes：
If actual temperature PV is less than target temperature SVN, the described control unit control inlet open, the inert gas source
Interior inert gas enters from the circulating line, is persistently closed after the predetermined time；
If actual temperature PV is higher than target temperature SVN, the described control unit control water intaking valve unlatching, the cooling-water machine water tank
Interior cooling water is entered by the circulating line, reaches the sample stage and it is cooled down.
2. a kind of substrate temperature control method, for controlling substrate temperature-controlling system, it is characterised in that the substrate temperature-controlling system includes：
Vacuum chamber；
Sample stage for placing substrate, is arranged in the vacuum chamber, and including being used for what the substrate was heated
Heater；
The circulating line being connected with the sample stage, is included an inlet and an outlet；
Inert gas source, the porch of the circulating line is connected to by intake valve；
Cooling-water machine water tank, the porch of the circulating line is connected to by water intaking valve；And
The control unit electrically connected with the heater, intake valve and water intaking valve, when needing to heat the substrate, opens institute
State intake valve and keep the water intaking valve to close；When needing to cool to the substrate, the water intaking valve and holding are opened
The intake valve is closed；
It the described method comprises the following steps：
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stages1-SVNInput to described control unit；
The relatively upper target temperature SV of S2, described control unitN-1With next target temperature SVN, and output current signal accordingly；
S3, described control unit are determined to the output voltage of the heater according to the current signal；
Wherein described step S2 includes：
If upper target temperature SVN-1Less than next target temperature SVN, described control unit controls the inlet open, described
Inert gas in inert gas source enters from the circulating line, is persistently closed after the predetermined time；
If upper target temperature SVN-1Higher than next target temperature SVN, described control unit controls the water intaking valve to open, described
Cooling water in cooling-water machine water tank is entered by the circulating line, reaches the sample stage and it is cooled down.
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| CN201510737946.0A CN105296952B (en) | 2015-11-03 | 2015-11-03 | Substrate temperature control method |
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| CN106555175A (en) * | 2016-10-27 | 2017-04-05 | 合肥优亿科机电科技有限公司 | A kind of high-density plasma reinforced chemical vapor deposition apparatus |
| CN106987808B (en) * | 2017-05-15 | 2019-04-09 | 成都西沃克真空科技有限公司 | A kind of coating machine substrate heating device |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
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| JP2923008B2 (en) * | 1989-12-11 | 1999-07-26 | 株式会社日立製作所 | Film forming method and film forming apparatus |
| JP2960678B2 (en) * | 1996-04-05 | 1999-10-12 | 株式会社日立製作所 | Substrate processing method and apparatus |
| JP4062925B2 (en) * | 2002-01-30 | 2008-03-19 | 凸版印刷株式会社 | Substrate temperature controller |
| CN203999801U (en) * | 2014-07-04 | 2014-12-10 | 深圳职业技术学院 | The temperature regulating device of physical vapor deposition substrate |
| CN205368490U (en) * | 2015-11-03 | 2016-07-06 | 深圳职业技术学院 | Substrate temperature control system |
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