CN105244384A - Vacuum packaging structure of infrared imaging chip - Google Patents
Vacuum packaging structure of infrared imaging chip Download PDFInfo
- Publication number
- CN105244384A CN105244384A CN201510534150.5A CN201510534150A CN105244384A CN 105244384 A CN105244384 A CN 105244384A CN 201510534150 A CN201510534150 A CN 201510534150A CN 105244384 A CN105244384 A CN 105244384A
- Authority
- CN
- China
- Prior art keywords
- infrared
- imaging chip
- infrared imaging
- window
- getter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 35
- 238000009461 vacuum packaging Methods 0.000 title abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 238000012913 prioritisation Methods 0.000 description 5
- 238000001931 thermography Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000010893 paper waste Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a vacuum packaging structure of an infrared imaging chip. The vacuum packaging structure comprises an infrared window, the infrared imaging chip, two pads, a getter and a visible light window, wherein the pads are bonded to the upper surface of the visible light window to form a cavity used for vacuum packaging, the infrared imaging chip and the getter are arranged in the cavity, the getter is placed between the infrared imaging chip and the upper surface of the visible light window, and the infrared window is bonded to the cavity to form a vacuum seal chamber. Selective anti-reflection can be carried out on infrared radiation of 8-14 micron to effectively protect the chip structure which is fragile in the internal, and the sealing performance is high; the air leak rate of the vacuum packaging structure is low; and the packaging structure is simple, the power consumption is low and the cost is low.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, particularly a kind of infrared imaging chip vacuum encapsulation structure.
Background technology
Infrared imagery technique is applied to the fields such as industrial sensor, image monitoring, auto industry, fire-fighting search and rescue, even military navigation and night vision more and more widely.Infrared focal plane detector manufacturing technology is the core of thermal imaging actualizing technology, and infrared focal plane array seeker chip seal encapsulation techniques is the key link realizing Infrared Detectors imaging, infrared focal plane array seeker chip needs to work in sealed environment under vacuo, otherwise cannot play the imaging function of its bolometer.Generally speaking, infrared focal plane array seeker high vacuum encapsulation technology adopts metal shell as annular seal space.
Vacuum Package is absolutely necessary for infrared focal plane array (infraredfocalplanearray, IRFPA) chip.The damage that IRFPA needs encapsulation to protect inner fragile micro-structural to avoid extraneous steam, dust etc. to cause; The more important thing is and need vacuum environment to guarantee the normal work of chip.Up to now, the existing multiple Vacuum Package scheme for electrical readout IRFPA, can be divided into wafer-level package, wafer level packaging and Pixel-level to encapsulate.Chip-scale Vacuum Package is a kind of vacuum packaging method researched and developed the earliest and be still widely used at present, but its packaging efficiency is lower.Wafer-level vacuum package improves packaging efficiency, but the method requires higher to the rate of finished products of IRFPA chip, otherwise, the waste paper of significant proportion will be encapsulated, thus the infrared filter that waste is expensive.Researched and developed by CEA-LETI, its innovation carries out Vacuum Package with semiconductive thin film to pixel on disk; But, use film as encapsulation cover plate in scheme, more fragile, be difficult to the inner fragile dot structure of available protecting; And light does not read the visible ray window needed for infrared focal plane array chip.
Existing this encapsulating structure inner member is many, volume is large, and along with the development of infrared thermal imaging technique, market demands infrared thermal imaging equipment volume is as far as possible smaller, especially some portable infrared thermal imaging apparatus, existing encapsulating structure cannot meet the requirement of cramped construction, and this encapsulating structure element is many, power consumption is high, with high costs and manufacture craft is difficult.And for some infrared focal plane detector chips, in some cases, need with the better environment of extraneous thermal insulation under work, above-mentioned existing encapsulating structure be difficult to meet application requirement.
How to solve the deficiencies in the prior art to become one of existing field of semiconductor photoelectron technique important problem needing solution badly.
Summary of the invention
Technical problem to be solved by this invention overcomes the deficiencies in the prior art and provides a kind of infrared imaging chip vacuum encapsulation structure, and the present invention can the infrared radiation of the anti-reflection wavelength of selectivity 8 ~ 14 μm, and effectively protect inner dot structure, closed performance is good.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
According to a kind of infrared imaging chip vacuum encapsulation structure that the present invention proposes, comprise infrared window, infrared imaging chip, two pads, getter, visible ray windows; Wherein, pad is bonded in the upper surface of visible ray window, form the cavity being used for Vacuum Package, described infrared imaging chip and getter are arranged in cavity, getter is between infrared imaging chip and the upper surface of visible ray window, infrared window is bonded on cavity, forms vacuum seal cavity.
As the further prioritization scheme of a kind of infrared imaging chip vacuum encapsulation structure of the present invention, described pad is silicon spacer.
As the further prioritization scheme of a kind of infrared imaging chip vacuum encapsulation structure of the present invention, the material of described visible ray window is glass.
As the further prioritization scheme of a kind of infrared imaging chip vacuum encapsulation structure of the present invention, described infrared imaging chip is by the upper surface of solder bond at visible ray window.
As the further prioritization scheme of a kind of infrared imaging chip vacuum encapsulation structure of the present invention, described getter is electric shock live-in getter.
As the further prioritization scheme of a kind of infrared imaging chip vacuum encapsulation structure of the present invention, the material of described infrared window is silicon chip.
The present invention adopts above technical scheme compared with prior art, has following technique effect:
(1) the present invention can the infrared radiation of the anti-reflection wavelength of selectivity 8 ~ 14 μm, the effectively inner fragile chip structure of protection, and closed performance is good;
(2) air leak rate of this vacuum encapsulation structure is low;
(3) encapsulating structure of the present invention is simple, low in energy consumption and cost is low.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Reference numeral in figure is interpreted as: 1-infrared window, 2-infrared imaging chip, 3-pad, 4-getter, 5-visible ray window.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
As shown in Figure 1, a kind of infrared imaging chip vacuum encapsulation structure, comprises infrared window 1, infrared imaging chip 2, two pads 3, getter 4, visible ray windows 5; Wherein, pad is bonded in the upper surface of visible ray window, form the cavity being used for Vacuum Package, described infrared imaging chip and getter are arranged in cavity, getter is between infrared imaging chip and the upper surface of visible ray window, infrared window is bonded on cavity, forms vacuum seal cavity.
Described pad is silicon spacer.
The material of described visible ray window is glass.
Described infrared imaging chip is by the upper surface of solder bond at visible ray window.
Described getter is electric shock live-in getter.
The material of described infrared window is silicon chip.
Silicon spacer and visible ray window are formed by anode linkage and are used for the encapsulation cavity of chip placement; It is anti-reflection that infrared window not only carries out selectivity to the infrared radiation of wavelength 8 ~ 14 μm, and be used as encapsulation cover plate, can protect inner fragile chip structure preferably.
Vacuum encapsulation structure Making programme is:
1) wet corrosion technique is used to make silicon spacer;
2) silicon spacer and visible ray window anode linkage, forms encapsulation cavity;
3) on encapsulation cavity, make Au and graphically, form Au adhesion layer;
4) chip solder is bonded in encapsulation cavity;
5) use common silicon chip as infrared window, sputter Au above and graphically, form adhesion layer;
6) infrared window under vacuum conditions solder bond in package cavity body piece, complete Vacuum Package.
Silicon spacer and visible ray window (glass) form encapsulation cavity, for chip placement by anode linkage; The infrared radiation of infrared window not only anti-reflection 8 ~ 14 mu m wavebands of selectivity, and as encapsulation cover plate; Encapsulation cavity and infrared window complete Vacuum Package by solder bond in vacuum chamber.This encapsulating structure have passed airtight detection, and test obtains 200 DEG C of electric iron thermographies.Infrared imaging chip after this Vacuum Package can to the electric iron blur-free imaging of 180 DEG C, and it is effective for indicating this vacuum packaging method.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention for this reason, and every technological thought proposed according to the present invention, any change that technical scheme basis is done, all falls within scope.
Claims (6)
1. an infrared imaging chip vacuum encapsulation structure, is characterized in that, comprises infrared window, infrared imaging chip, two pads, getter, visible ray windows; Wherein, pad is bonded in the upper surface of visible ray window, form the cavity being used for Vacuum Package, described infrared imaging chip and getter are arranged in cavity, getter is between infrared imaging chip and the upper surface of visible ray window, infrared window is bonded on cavity, forms vacuum seal cavity.
2. a kind of infrared imaging chip vacuum encapsulation structure according to claim 1, is characterized in that, described pad is silicon spacer.
3. a kind of infrared imaging chip vacuum encapsulation structure according to claim 1, is characterized in that, the material of described visible ray window is glass.
4. a kind of infrared imaging chip vacuum encapsulation structure according to claim 1, is characterized in that, described infrared imaging chip is by the upper surface of solder bond at visible ray window.
5. a kind of infrared imaging chip vacuum encapsulation structure according to claim 1, is characterized in that, described getter is electric shock live-in getter.
6. a kind of infrared imaging chip vacuum encapsulation structure according to claim 1, is characterized in that, the material of described infrared window is silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534150.5A CN105244384A (en) | 2015-08-27 | 2015-08-27 | Vacuum packaging structure of infrared imaging chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534150.5A CN105244384A (en) | 2015-08-27 | 2015-08-27 | Vacuum packaging structure of infrared imaging chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105244384A true CN105244384A (en) | 2016-01-13 |
Family
ID=55041951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510534150.5A Pending CN105244384A (en) | 2015-08-27 | 2015-08-27 | Vacuum packaging structure of infrared imaging chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105244384A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370498A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院长春光学精密机械与物理研究所 | Small permanent high-vacuum cavity of detector and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1630531A1 (en) * | 2004-08-24 | 2006-03-01 | Ulis | Component for the detection of electromagnetic radiation, in particular infrared, optical block for infrared imaging integrating said component and fabrication procedure thereof |
| CN102956662A (en) * | 2012-11-22 | 2013-03-06 | 烟台睿创微纳技术有限公司 | Vacuum sealing packaging structure and packaging method for infrared focal plane detector chip |
| CN104003352A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on getter film |
-
2015
- 2015-08-27 CN CN201510534150.5A patent/CN105244384A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1630531A1 (en) * | 2004-08-24 | 2006-03-01 | Ulis | Component for the detection of electromagnetic radiation, in particular infrared, optical block for infrared imaging integrating said component and fabrication procedure thereof |
| CN102956662A (en) * | 2012-11-22 | 2013-03-06 | 烟台睿创微纳技术有限公司 | Vacuum sealing packaging structure and packaging method for infrared focal plane detector chip |
| CN104003352A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on getter film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370498A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院长春光学精密机械与物理研究所 | Small permanent high-vacuum cavity of detector and preparation method |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160113 |