CN104003352B - Mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared - Google Patents
Mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared Download PDFInfo
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- CN104003352B CN104003352B CN201410264566.5A CN201410264566A CN104003352B CN 104003352 B CN104003352 B CN 104003352B CN 201410264566 A CN201410264566 A CN 201410264566A CN 104003352 B CN104003352 B CN 104003352B
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Abstract
The present invention provides a kind of mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared, and the method comprising the steps of：a）One gasket, a substrate slice and a cover plate are provided, chip package chamber is formed in the gasket；b）It is bonded the gasket and the substrate slice；c）Chip to be packaged is bonded to the substrate slice by bonding structure；d）Getter is provided, and the getter is fixed on the coverslip surface towards the chip package chamber；e）It is bonded the cover plate and the gasket and activated degasser.The present invention is based on MEMS technologies to make encapsulation cavity, and non-refrigeration infrared detector chip is placed in chip package intracavitary completes Vacuum Package, is conducive to protect micro-structure fragile on non-refrigeration infrared detector chip, and be provided with the efficiency of wafer level packaging；The vacuum degree of cavity is maintained using Fe Getter Films Prepared, the volume of Vacuum Package can be reduced；Only to carrying out Vacuum Package by the non-refrigeration infrared detector chip of test, packaging cost is reduced.
Description
Technical field
The present invention relates to a kind of mixing wafer-level vacuum encapsulating method and structures, thin based on getter more particularly to one kind
The mixing wafer-level vacuum encapsulating method and structure of film.
Background technology
Infrared detection technique is one of modern core military technology, have detection range remote, strong antijamming capability, can whole day
The advantages of waiting work.It is also more and more extensive in the application of civil field as the development of infrared imagery technique is with ripe.
It can be divided into two major class of quantum type and uncooled IRFPA according to operation principle infrared detector.Quantum type infrared detector is sensitive
Degree is high, generally requires refrigeration, higher price.Non-refrigeration infrared detector sensitivity is slightly lower, and without refrigeration, sexual valence is higher.This
Kind non-refrigeration infrared detector can be divided into electrical readout and light two major class of reading according to signal-obtaining mode.With vanadium oxide, amorphous
Silicon occupy dominant position for the infrared detector of the electrical readout mode of representative, has been successfully realized commercialization.Optical read-out mode
Infrared detector without complicated reading circuit, detectivity is high, and manufacture difficulty is relatively low, has the latent of high performance-price ratio
Matter, at present existing procucts enter market.
In order to realize high-performance, non-refrigeration infrared detector needs Vacuum Package.Traditional vacuum packaging method is to use
Metal shell is packaged, and generally comprises metal tube socket and infrared filter, and this Vacuum Package mode efficiency is slightly lower；Wafer scale
Vacuum Package is sliced again after completing to the Vacuum Package of entire disk, improves packaging efficiency, but due to chip to be packaged
The reason of yield rate, encapsulates the chip of some poor performances, wastes the expensive infrared filter in part.
In view of the above-mentioned problems, the present invention proposes a kind of mix-crystal of the non-refrigeration infrared detector based on Fe Getter Films Prepared
Circle level vacuum encapsulating method will be exactly placed in the encapsulation cavity piece made by the chip to be packaged of detection and completes vacuum
Encapsulation, on the one hand improves packaging efficiency, on the other hand ensure that the utilization rate of infrared fileter, reduce packaging cost.
Vacuum packaging method proposed by the invention and structure are equally also fitted other than being suitble to thermal type infrared detector chip
It is micro- to close micromechanical gyro chip, accelerometer chip, resonator chip, feds chip, pressure sensor chip and light
Mechanical devices chip etc. needs the micro mechanical sensor and actuator of Vacuum Package.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of mixed based on Fe Getter Films Prepared
Wafer-level vacuum encapsulating method and structure are closed, to improve the packaging efficiency of device, reduces encapsulation difficulty and cost.
In order to achieve the above objects and other related objects, the present invention provides a kind of mixing wafer scale based on Fe Getter Films Prepared
Vacuum packaging method includes the following steps：
A) one gasket, a substrate slice and a cover plate are provided, chip package chamber is formed in the gasket；
B) it is bonded the gasket and the substrate slice forms encapsulation cavity；
C) one is provided by the chip to be packaged of test, and bonding junction has been passed through by the chip to be packaged of test by described
Structure is bonded to the substrate slice or has been bonded to the cover plate by bonding structure by the chip to be packaged of test by described；
D) getter is provided, and the getter is fixed on the coverslip surface towards the package cavity；
E) provide a vacuum equipment, by it is described encapsulation cavity and cover plate alignment after, vacuumized, activated degasser and add
Heat pressurization, the cover plate and the gasket are bonded by bonding structure.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, step
A) the step of vacuum buffer chamber is formed in the gasket is further included in, and the vacuum buffer chamber is located at the chip package chamber
Peripheral region.
Further, step d) further includes the step of fixing getter in the vacuum buffer chamber.The vacuum buffer
It can be placed in the chamber cavity, fix suitable band-like getter, what getter can not also be let alone.Vacuum buffer chamber is on the one hand
It can delay the decline of chip package intracavitary vacuum degree, extend the service life of device, on the other hand can also improve the finished product of encapsulation
Rate.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, step
A) it further includes to be formed in the substrate slice and is used to the through-hole structure of chip lead to be packaged or is formed in the cover plate be used for
The through-hole structure of chip lead to be packaged, and form in the through-hole structure of the substrate slice metal column or in the cover plate
The step of metal column is formed in through-hole structure.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, it is described
The type of chip to be packaged includes non-refrigeration infrared detector chip, micromechanical gyro chip, accelerometer chip, resonator core
Piece, feds chip, pressure sensor chip and light micro mechanical device chip.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, it is described
Chip to be packaged is non-refrigeration infrared detector, and the cover plate is to include double throwing silicon chips, germanium wafer and the infrared filtering for vulcanizing zinc metal sheet
Piece, and the infrared filter surface is formed with infrared anti-reflection film.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, step
B) type of bonding pattern includes anode linkage, silicon-silicon bond closes and complex metal layer-solder-complex metal layer bonding.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, step
C) lamination of the bonding structure for complex metal layer-solder-complex metal layer composition and described in step e).
Further, the type of the complex metal layer includes Cr/Au, Cr/Cu, Cr/Ni/Au, Ti/Ni/Au, Ti/W/
Ni/Au；The type of the solder includes AuSn, AgSn, InSn, PbSn, CuSn.
Shape for the complex metal layer of sealing welding should be the cyclic structure being closed, and size, shape should be by required
The structure of sealing determines；Shape for fixed chip complex metal layer should be strip or sheet or the cyclic structure with opening
Or other non-occluded configuration, size, shape should be determined by required fixed chip；It should for the complex metal layer of electrical connection
It is discrete pane, circular block or other discrete shapes, size and shape should match with metal column apex area.
The selection of the material of solder is on the one hand related to the selection of composition metal layer material, on the other hand suitable with technique
Sequence is related, it is however generally that, the solder melting welding temperature used in subsequent technique is not higher than the solder used in previous process
Melting welding temperature；Solder can select as needed preforming solder or selection directly on complex metal layer using plating,
The method of sputtering or evaporation prepares solder；The shape of solder should be selected according to purposes：When be used for sealing when should select
The cyclic structure solder of closure, size, shape should match with the complex metal layer in the structure of required sealing；When being used for
Fixed chip and during non-tight, cyclic structure, strip structure solder, soldered ball or weld tabs with opening, size, shape should be selected
Should on required fixed chip and bearing's complex metal layer matches；When being used for electrical connection, soldered ball or weld tabs should be selected,
The size and shape of soldered ball or weld tabs should match with metal column apex area.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, it is described
The type of gasket includes double throwing sheet glass, double throwing silicon chips and potsherd, and the type of the substrate slice throws sheet glass, double throwings including double
Silicon chip and potsherd.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, it is described
Cover plate is the full wafer to match with the size of the substrate slice or is to be fixed on the fixture to match with the size of the substrate slice
In separate sheet.
A kind of preferred embodiment of the mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared as the present invention, it is described
The ingredient of getter includes one kind or the combination of zircaloy and titanium alloy.
The present invention also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared, including：
Substrate slice；
Gasket is incorporated into the substrate slice surface, and the encapsulation cavity formed contains chip package chamber；
Cover plate is incorporated into the gasket surface by bonding structure；
Getter is fixed on the coverslip surface towards the package cavity；
Chip to be packaged is incorporated into the substrate slice or the cover plate by bonding structure.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
Vacuum buffer chamber is also formed in gasket, and the vacuum buffer chamber is located at the peripheral region of the chip package chamber.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
Getter is fixed in vacuum buffer chamber.It can be placed in described vacuum buffer chamber cavity, fix suitable band-like getter,
What getter can not also be let alone.On the one hand vacuum buffer chamber can delay the decline of chip package intracavitary vacuum degree, extend device
Service life, on the other hand can also improve the yield rate of encapsulation.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
It is formed with to be formed for chip lead to be packaged in the metal column of chip lead to be packaged or the cover plate in substrate slice
Metal column.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
The type of chip to be packaged includes non-refrigeration infrared detector chip, micromechanical gyro chip, accelerometer chip, resonator core
Piece, feds chip, pressure sensor chip and light micro mechanical device chip.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
Chip to be packaged is non-refrigeration infrared detector, and the cover plate is to include double throwing silicon chips, germanium wafer and the infrared filtering for vulcanizing zinc metal sheet
Piece, and the infrared filter surface is formed with infrared anti-reflection film.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
Lamination of the bonding structure for complex metal layer-solder-complex metal layer composition.
Further, the type of the complex metal layer includes Cr/Au, Cr/Cu, Cr/Ni/Au, Ti/Ni/Au, Ti/W/
Ni/Au；The type of the solder includes AuSn, AgSn, InSn, PbSn, CuSn.
Shape for the complex metal layer of sealing welding should be the cyclic structure being closed, and size, shape should be by required
The structure of sealing determines；Shape for fixed chip complex metal layer should be strip or sheet or the cyclic structure with opening
Or other non-occluded configuration, size, shape should be determined by required fixed chip；It should for the complex metal layer of electrical connection
It is discrete pane, circular block or other discrete shapes, size and shape should match with metal column apex area.
The selection of the material of solder is on the one hand related to the selection of composition metal layer material, on the other hand suitable with technique
Sequence is related, it is however generally that, the solder melting welding temperature used in subsequent technique is not higher than the solder used in previous process
Melting welding temperature；Solder can select as needed preforming solder or selection directly on complex metal layer using plating,
The method of sputtering or evaporation prepares solder；The shape of solder should be selected according to purposes：When be used for sealing when should select
The cyclic structure solder of closure, size, shape should match with the complex metal layer in the structure of required sealing；When being used for
Fixed chip and during non-tight, cyclic structure, strip structure solder, soldered ball or weld tabs with opening, size, shape should be selected
Should on required fixed chip and bearing's complex metal layer matches；When being used for electrical connection, soldered ball or weld tabs should be selected,
The size and shape of soldered ball or weld tabs should match with metal column apex area.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
The type of gasket includes double throwing sheet glass, double throwing silicon chips and potsherd, and the type of the substrate slice throws sheet glass, double throwings including double
Silicon chip and potsherd.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
Cover plate is the full wafer to match with the size of the substrate slice or is to be fixed on the fixture to match with the size of the substrate slice
In separate sheet.
A kind of preferred embodiment of the mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared as the present invention, it is described
The ingredient of getter includes one kind or the combination of zircaloy and titanium alloy.
As described above, the present invention provides a kind of mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared,
Including step：A) one gasket, a substrate slice and a cover plate are provided, chip package chamber is formed in the gasket；B) described in bonding
Gasket and the substrate slice form encapsulation cavity；C) one is provided by the chip to be packaged of test, has passed through test by described
Chip to be packaged the substrate slice is bonded to by bonding structure or key has been passed through by the chip to be packaged of test by described
Structural bond is closed together in the cover plate；D) getter is provided, and the getter is fixed on the cover plate table towards the package cavity
Face；E) one vacuum equipment is provided, after the encapsulation cavity and cover plate alignment, vacuumized, activated degasser and heating add
Pressure, the cover plate and the gasket are bonded by bonding structure.The present invention is based on MEMS technologies to make encapsulation cavity, by uncooled IRFPA
Infrared detector chip is placed in chip intracavitary and completes Vacuum Package, is conducive to protect fragile on non-refrigeration infrared detector chip
Micro-structure, and it is provided with the efficiency of wafer level packaging；The vacuum degree of maintenance cavity is thought using Fe Getter Films Prepared, vacuum seal can be reduced
The volume of dress；Only to carrying out Vacuum Package by the non-refrigeration infrared detector chip of test, packaging cost is reduced.
Description of the drawings
Fig. 1 is shown as the schematic top plan view in the present invention with the gasket of chip package chamber and vacuum buffer chamber.
Fig. 2 is shown as the schematic top plan view of the gasket with chip package chamber in the present invention.
Fig. 3 a~Fig. 3 e are shown as the mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared of the present invention
The structure diagram that embodiment 1 is presented.
Fig. 4~Figure 34 is shown as the mixing wafer-level vacuum encapsulating method and structure reality based on Fe Getter Films Prepared of the present invention
Apply the structure diagram that 2~embodiment of example 32 is presented.
Component label instructions
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Figure 34.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout kenel may also be increasingly complex.
It should be noted that scheme in order to preferably explain the present invention, specific embodiment of the invention is only to be based on
The non-refrigeration infrared detector mixing wafer-level vacuum encapsulating method and structure of Fe Getter Films Prepared, certainly, the present invention is for other
The encapsulation of the detector of type is equally applicable, and the type of the chip to be packaged further includes micromechanical gyro chip, acceleration
Meter chip, resonator chip, feds chip, pressure sensor chip and light micro mechanical device chip etc. need vacuum seal
The micro mechanical sensor and actuator of dress.Those skilled in the art can carry out changing for adaptability according to the different of type photodetector
Become, but do not limit protection scope of the present invention.
In addition, the gasket 2 of the present invention is the gasket 2 of wafer scale, but for convenience of explanation, Fig. 1 Fig. 2 is with a chip list
For member, Fig. 3 a~Figure 34 is by taking two chip units as an example.Fig. 1~Fig. 2 is shown as the methods of gasket 2 of the present invention is through over etching
Concrete structure schematic diagram after processing, wherein,
1 chip package chamber 21 and 4 vacuum buffer chambers 26 are formed in the gasket 2 that Fig. 1 is shown；
1 chip package chamber 21 is formed in the gasket 2 that Fig. 2 is shown.
Embodiment 1
The present embodiment provides a kind of mixing wafer-level vacuum encapsulating methods based on Fe Getter Films Prepared, include the following steps：
Step a) is carried out first, a gasket 2, a substrate slice 1 and a cover plate are provided, and chip envelope is formed in the gasket 2
It behave affectedly 21, vacuum buffer chamber 26 is formed in the gasket 2, and the vacuum buffer chamber 26 is located at the chip package chamber 21
Peripheral region.
Then step b) is carried out, the gasket 2 is bonded and the substrate slice 1 forms encapsulation cavity；
Then step c) is carried out, one is provided by the chip to be packaged of test, passes through the to be packaged of test by described
Chip is bonded to the substrate slice 1 by bonding structure or has passed through bonding structure by the chip to be packaged of test by described
The cover plate is bonded to, wherein, if necessary, it need to be formed in the substrate slice 1, gasket 2, chip to be packaged and be used for electrical lead
Metal column；
Then step d) is carried out, provides getter 34, and the getter 34 is fixed on towards the chip package chamber
21 coverslip surface；
Step e) is finally carried out, a vacuum equipment is provided, after the encapsulation cavity and cover plate alignment, vacuumized,
Activated degasser and heating pressurization, the cover plate and the gasket 2 are bonded by bonding structure.
As an example, step d) further includes the step of fixing getter in the vacuum buffer chamber 26.The vacuum is delayed
Rushing in chamber 26 cavity can place, fix suitable band-like getter 24, can not also let alone what getter.Vacuum buffer chamber
26 one side can delay the decline of vacuum degree in chip package chamber 21, extend the service life of device, on the other hand can also improve
The yield rate of encapsulation.
As an example, the chip to be packaged is non-refrigeration infrared detector, the cover plate is to include double throwing silicon chips, germanium wafer
And the infrared filter 3 of vulcanization zinc metal sheet, and 3 surface of the infrared filter is formed with infrared anti-reflection film 31.
As an example, the type of the gasket 2 includes double throwing sheet glass, double throwing silicon chips, the type of the substrate slice 1 includes
Double throwing sheet glass, double throwing silicon chips.Certainly, in other embodiments, the gasket 2 and substrate slice 1 can also be potsherd etc.
Other types.
As an example, the type of the bonding pattern of step b) include anode linkage (such as glass is bonded with glass), silicon-
Silicon bonding (such as silicon is bonded with silicon) and complex metal layer-solder-complex metal layer bonding, it is in the present embodiment, described
The type of the bonding pattern of step b) is closed for anode linkage or silicon-silicon bond.Certainly, if the gasket 2 or substrate 1 are unable to anode key
When conjunction or silicon-silicon bond close, the bonding pattern of the gasket 2 and substrate slice 1 then answers the compound gold of selected as complex metal layer-solder-
Belong to layer bonding.
As an example, the bonding structure described in step c) and step e) is complex metal layer-solder-complex metal layer composition
Lamination.Specifically, the type of the complex metal layer includes Cr/Au, Cr/Cu, Cr/Ni/Au, Ti/Ni/Au, Ti/W/Ni/
Au；The type of the solder includes AuSn, AgSn, InSn, PbSn, CuSn.
Wherein, it should be noted that the shape for the complex metal layer of sealing welding should be the cyclic structure being closed,
Size, shape should be determined by the structure of required sealing；Shape for fixed chip complex metal layer should be strip or sheet
Or the cyclic structure with opening or other non-occluded configuration, size, shape should be determined by required fixed chip；For electricity
The complex metal layer of connection should be discrete pane, circular block or other discrete shapes, size and shape Ying Yujin
Belong to capital end area to match.
In addition, the material of solder selection on the one hand it is related to the selection of composition metal layer material, on the other hand with
Process sequence is related, it is however generally that, the solder melting welding temperature used in subsequent technique is not higher than used in previous process
The melting welding temperature of solder；Solder can select preforming solder or selection directly to be adopted on complex metal layer as needed
Solder is prepared with the method for plating, sputtering or evaporation；The shape of solder should be selected according to purposes：When being used for sealing
The cyclic structure solder being closed should be selected, size, shape should match with the complex metal layer in the structure of required sealing；When
It is used for fixed chip during non-tight, cyclic structure, strip structure solder, soldered ball or weld tabs with opening should be selected, it is big
Small, shape should on required fixed chip and bearing's complex metal layer matches；When being used for electrical connection, soldered ball should be selected
Or weld tabs, the size and shape of soldered ball or weld tabs should match with metal column apex area.
As an example, the cover plate is the full wafer to match with the size of the substrate slice 1 or is to be fixed on and the lining
Separate sheet in the fixture that the size of egative film 1 matches.
As an example, the ingredient of the getter includes one kind or the combination of zircaloy and titanium alloy, as Zr-V-Fe-Al,
Ti-Mo etc..
As shown in Fig. 3 a~Fig. 3 e, specifically, the present embodiment includes the following steps：
As shown in Figure 3a, the first step provides a substrate slice 1, by etching, corroding or the methods of laser in the substrate slice
The through-hole structure for chip lead to be packaged is formed in 1.
As shown in Fig. 1 and Fig. 3 a, second step provides a gasket 2, by etching, corroding or the methods of laser in the pad
1 chip package chamber 21 and 4 vacuum buffer chambers 26 are formed in piece 2, and the vacuum buffer chamber 26 is located at chip envelope
It behave affectedly 21 peripheral region.In subsequent technical process, can be placed in described cavity of vacuum buffer chamber 26, fix it is suitable
What getter getter can not also let alone.On the one hand vacuum buffer chamber 26 can delay in chip package chamber 21 under vacuum degree
Drop extends the service life of device, on the other hand can also improve the yield rate of encapsulation.Wherein, the gasket 2 shown in Fig. 3 a includes
2 chip units.
As shown in Figure 3b, third walks, and is bonded the gasket 2 and the substrate slice 1.In the present embodiment, the gasket 2 and
The substrate slice 1 be it is double throw silicon chips be respectively either it is double throw silicon chips and it is double throw sheet glass or be respectively it is double throw sheet glass and
Double throwing silicon chips, bonding pattern is closed for silicon-silicon bond or silicon-glass anodic bonding.
As shown in Figure 3c, the 4th step forms metal column by electric plating method in the through-hole structure of the substrate slice 1
13,13 material of metal column is gold or the metals such as copper or aluminium, but is not limited to above-mentioned material.
As shown in Figure 3c, the 5th step, using sputtering evaporation or electric plating method substrate slice 1 (position of metal column),
2 upper surface of gasket makes complex metal layer 12 and 22；
As shown in Figure 3d, the 6th step is provided by the electrical readout non-refrigeration infrared detector chip 4 of test, and
Metal throuth hole and complex metal layer 42 are made thereon, and non-refrigeration infrared detector chip 4 is bonded fixation by solder 51
Onto substrate slice 1, chip sensitizing range 41 is towards 3 side of infrared filter.After the completion of bonding, the electric signal of chip can pass through metal
Column 43 and 13 is drawn.It is worth noting that, solder 51,52,53 can be preforming or directly be produced on compound
On metal layer 12,22,32,42.
As shown in Figure 3 e, the 7th step provides getter, and the getter is fixed on towards the chip package chamber 21
Coverslip surface.The cover plate is double infrared filters 3 for throwing silicon chip, and infrared anti-reflection film 31 is made on 3 surface of infrared filter,
Then complex metal layer 32 is made, the infrared filter 3 is the full wafer to match with the size of the substrate slice 1；
As shown in Figure 3 e, the 8th step provides a vacuum equipment, after the encapsulation cavity and infrared filter 3 are aligned, into
Row vacuumize (infrared filter 3 and gasket 2 are not contacted or are not in close contact at this time), baking outlet, activated degasser, heating plus
It presses (infrared filter 3 and gasket 2 are in close contact at this time), the infrared filter 3 and the gasket 2 is bonded by bonding structure
Complete Vacuum Package.It should be noted that after the completion of encapsulation, the distance of the top of gasket 2 and the lower surface of infrared filter 3 is
Micron dimension, in order to illustrate the convenience of problem in figure, the distance between they are drawn to compare exaggeration, are not drawn to scale.
As shown in Figure 3 e, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Including：
Substrate slice 1；
Gasket 2 is incorporated into 1 surface of substrate slice, and the encapsulation cavity formed contains chip package chamber 21 and vacuum
Cushion chamber 26, and the vacuum buffer chamber 26 is located at the peripheral region of the chip package chamber 21；
Cover plate is incorporated into 2 surface of gasket by bonding structure；
Getter 34 is fixed on the coverslip surface towards the chip package chamber 21；
Chip to be packaged is incorporated into the substrate slice 1 or the cover plate by bonding structure.
As an example, it is fixed with getter in the vacuum buffer chamber 26.It can be in described cavity of vacuum buffer chamber 26
It places, fixed suitable band-like getter 24, what getter can not also be let alone.On the one hand vacuum buffer chamber 26 can delay chip
The decline of vacuum degree in package cavity 21 extends the service life of device, on the other hand can also improve the yield rate of encapsulation.
As an example, it is formed in the substrate slice 1 for the metal column of chip lead to be packaged.
As an example, the chip to be packaged is non-refrigeration infrared detector, the cover plate is to include double throwing silicon chips, germanium wafer
And the infrared filter 3 of vulcanization zinc metal sheet, and 3 surface of the infrared filter is formed with infrared anti-reflection film 31.
As an example, lamination of the bonding structure for complex metal layer-solder-complex metal layer composition.
As an example, the type of the complex metal layer includes Cr/Au, Cr/Cu, Cr/Ni/Au, Ti/Ni/Au, Ti/W/
Ni/Au；The type of the solder includes AuSn, AgSn, InSn, PbSn, CuSn.
Shape for the complex metal layer of sealing welding should be the cyclic structure being closed, and size, shape should be by required
The structure of sealing determines；Shape for fixed chip complex metal layer should be strip or sheet or the cyclic structure with opening
Or other non-occluded configuration, size, shape should be determined by required fixed chip；It should for the complex metal layer of electrical connection
It is discrete pane, circular block or other discrete shapes, size and shape should match with metal column apex area.
The selection of the material of solder is on the one hand related to the selection of composition metal layer material, on the other hand suitable with technique
Sequence is related, it is however generally that, the solder melting welding temperature used in subsequent technique is not higher than the solder used in previous process
Melting welding temperature；Solder can select as needed preforming solder or selection directly on complex metal layer using plating,
The method of sputtering or evaporation prepares solder；The shape of solder should be selected according to purposes：When be used for sealing when should select
The cyclic structure solder of closure, size, shape should match with the complex metal layer in the structure of required sealing；When being used for
Fixed chip and during non-tight, cyclic structure, strip structure solder, soldered ball or weld tabs with opening, size, shape should be selected
Should on required fixed chip and bearing's complex metal layer matches；When being used for electrical connection, soldered ball or weld tabs should be selected,
The size and shape of soldered ball or weld tabs should match with metal column apex area.
As an example, the type of the gasket 2 includes double throwing sheet glass, double throwing silicon chips and potsherd, the substrate slice 1
Type includes double throwing sheet glass, double throwing silicon chips and potsherd.In the present embodiment, the gasket 2 and substrate slice 1 are double throwing silicon
Piece is respectively either that pair throwing silicon chips throw sheet glass or respectively pair throwing sheet glass and double throwing silicon chips with double.
As an example, the cover plate is the full wafer to match with the size of the substrate slice 1 or is to be fixed on and the lining
Separate sheet in the fixture that the size of egative film 1 matches.
As an example, the ingredient of the getter includes one kind or the combination of zircaloy and titanium alloy, as Zr-V-Fe-Al,
Ti-Mo etc..
Embodiment 2
As shown in figure 4, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 1, wherein, the cover plate is the separation being fixed in the fixture to match with the size of the substrate slice
Piece.
As shown in figure 4, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 1, wherein, the cover plate is the separation being fixed in the fixture to match with the size of the substrate slice
Piece.
Embodiment 3
As shown in figure 5, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 1, wherein, the present embodiment does not need to form through-hole structure and metal column in substrate slice, chip to be packaged,
But the through-hole structure for chip lead to be packaged is formed in the cover plate, and formed in the through-hole structure of the cover plate
Metal column 33；The non-refrigeration infrared detector is not to be bonded to the substrate surface but be bonded to the coverslip surface.
As shown in figure 5, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 1, wherein, through-hole structure and metal column are not formed in substrate slice, chip to be packaged described in the present embodiment,
And it is then formed for the through-hole structure of chip lead to be packaged and metal column 33 in the cover plate；The non-refrigeration infrared detector
It is not to be bonded to the substrate surface but be bonded to the coverslip surface.
Embodiment 4
As shown in fig. 6, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 3, wherein, the cover plate is the separation being fixed in the fixture to match with the size of the substrate slice
Piece.
As shown in fig. 6, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 3, wherein, the cover plate is the separation being fixed in the fixture to match with the size of the substrate slice
Piece.
Embodiment 5
As shown in fig. 7, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 1, wherein, the substrate slice 1 and gasket 2 cannot be bonded in by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 are potsherd or are double to throw sheet glass or respectively potsherd, sheet glass or respectively
For sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot pass through
The method of anode linkage or Si-Si bonding is bonded together, and needs 2 key of substrate slice 1 and gasket through the method in solder bond
It is combined, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer 22 in 2 lower surface of gasket,
Substrate slice 1 and gasket 2 are bonded together by solder 53.
As shown in fig. 7, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 1, wherein, the substrate slice 1 and gasket 2 cannot be bonded by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 be potsherd or be it is double throw sheet glass or respectively potsherd, sheet glass or point
Not Wei sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot lead to
The method for crossing anode linkage or Si-Si bonding is bonded together, and needs substrate slice 1 and gasket 2 through the method in solder bond
It is bonded together, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer in 2 lower surface of gasket
22, substrate slice 1 and gasket 2 are bonded together by solder 53.
Embodiment 6
As shown in figure 8, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 2, wherein, the substrate slice 1 and gasket 2 cannot be bonded in by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 are potsherd or are double to throw sheet glass or respectively potsherd, sheet glass or respectively
For sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot pass through
The method of anode linkage or Si-Si bonding is bonded together, and needs 2 key of substrate slice 1 and gasket through the method in solder bond
It is combined, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer 22 in 2 lower surface of gasket,
Substrate slice 1 and gasket 2 are bonded together by solder 53.
As shown in figure 8, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 2, wherein, the substrate slice 1 and gasket 2 cannot be bonded by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 be potsherd or be it is double throw sheet glass or respectively potsherd, sheet glass or point
Not Wei sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot lead to
The method for crossing anode linkage or Si-Si bonding is bonded together, and needs substrate slice 1 and gasket 2 through the method in solder bond
It is bonded together, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer in 2 lower surface of gasket
22, substrate slice 1 and gasket 2 are bonded together by solder 53.
Embodiment 7
As shown in figure 9, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, base
This step such as embodiment 3, wherein, the substrate slice 1 and gasket 2 cannot be bonded in by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 are potsherd or are double to throw sheet glass or respectively potsherd, sheet glass or respectively
For sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot pass through
The method of anode linkage or Si-Si bonding is bonded together, and needs 2 key of substrate slice 1 and gasket through the method in solder bond
It is combined, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer 22 in 2 lower surface of gasket,
Substrate slice 1 and gasket 2 are bonded together by solder 53.
As shown in figure 9, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Basic structure such as embodiment 3, wherein, the substrate slice 1 and gasket 2 cannot be bonded by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 be potsherd or be it is double throw sheet glass or respectively potsherd, sheet glass or point
Not Wei sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot lead to
The method for crossing anode linkage or Si-Si bonding is bonded together, and needs substrate slice 1 and gasket 2 through the method in solder bond
It is bonded together, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer in 2 lower surface of gasket
22, substrate slice 1 and gasket 2 are bonded together by solder 53.
Embodiment 8
As shown in Figure 10, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 4, wherein, the substrate slice 1 and gasket 2 cannot be bonded by the method for anode linkage or Si-Si bonding
Together, i.e., substrate slice 1 and gasket 2 be potsherd or be it is double throw sheet glass or respectively potsherd, sheet glass or point
Not Wei sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot lead to
The method for crossing anode linkage or Si-Si bonding is bonded together, and needs substrate slice 1 and gasket 2 through the method in solder bond
It is bonded together, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes complex metal layer in 2 lower surface of gasket
22, substrate slice 1 and gasket 2 are bonded together by solder 53.
As shown in Figure 10, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 4, wherein, the substrate slice 1 and gasket 2 cannot pass through anode linkage or the method key of Si-Si bonding
Be combined, i.e., substrate slice 1 and gasket 2 be potsherd or be it is double throw sheet glass or respectively potsherd, sheet glass or
Respectively sheet glass, potsherd or respectively potsherd, double throwing silicon chips or be respectively it is double throw silicon chips, potsherd, they cannot
Be bonded together by the method for anode linkage or Si-Si bonding, need by the method in solder bond by substrate slice 1 and pad
Piece 2 is bonded together, that is, needs to make complex metal layer 12 in substrate slice upper surface, makes composition metal in 2 lower surface of gasket
Substrate slice 1 and gasket 2, are bonded together by layer 22 by solder 53.
Embodiment 9
As shown in figure 11, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 1, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 11, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 1, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 10
As shown in figure 12, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 2, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 12, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 2, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 11
As shown in figure 13, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 3, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 13, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 3, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 12
As shown in figure 14, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 4, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 14, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 4, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 13
As shown in figure 15, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 5, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 15, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 5, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 14
As shown in figure 16, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 6, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 16, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 6, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 15
As shown in figure 17, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 7, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 17, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 7, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 16
As shown in figure 18, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 8, wherein, the through-hole that the gasket 2 is formed is only comprising chip package chamber 21, without vacuum buffer
Chamber 26.
As shown in figure 18, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 8, wherein, the through-hole that the gasket 2 is formed only comprising chip package chamber 21, delays without vacuum
Rush chamber 26.
Embodiment 17
As shown in figure 19, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 1, wherein, the non-refrigeration infrared detector chip 4 reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 19, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 1, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 18
As shown in figure 20, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 2, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 20, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 2, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 19
As shown in figure 21, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 3, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 21, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 3, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 20
As shown in figure 22, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 4, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 22, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 4, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 21
As shown in figure 23, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 5, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 23, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 5, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 22
As shown in figure 24, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 6, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 24, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 6, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 23
As shown in figure 25, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 7, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 25, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 7, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 24
As shown in figure 26, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 8, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 26, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 8, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 25
As shown in figure 27, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 9, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 27, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 9, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 26
As shown in figure 28, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 10, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 28, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 10, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 27
As shown in figure 29, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 11, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 29, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 11, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 28
As shown in figure 30, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 12, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 need to select double silicon chip, the substrate slice 1 and gaskets 2 thrown to form encapsulation by silicon-glass anodic bonding
Cavity is not related to the making of through-hole structure and metal column in technical process, and non-refrigeration infrared detector chip is read in fixed light
When, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer is then towards red
Outer 3 side of filter plate.
As shown in figure 30, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 12, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 need to select double throwing silicon chips, and the substrate slice 1 and gasket 2 are formed by silicon-glass anodic bonding
Cavity is encapsulated, is not related to the making of through-hole structure and metal column in technical process, non-refrigeration infrared detector is read in fixed light
During chip, it should be noted that by the visible reflectance of chip facing towards 1 side of glass substrate of saturating visible ray, and infrared absorption layer then court
To 3 side of infrared filter.
Embodiment 29
As shown in figure 31, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 13, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 31, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 13, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 30
As shown in figure 32, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 14, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 32, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 14, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 31
As shown in figure 33, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 15, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 33, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 15, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
Embodiment 32
As shown in figure 34, the present embodiment provides a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared,
Basic step such as embodiment 16, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector chip for light.
Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select visible ray
Sheet glass, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-solder-
Complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, is read in fixed light
When going out non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate 1 one of saturating visible ray
Side, and infrared absorption layer is then towards 3 side of infrared filter.
As shown in figure 34, the present embodiment also provides a kind of mixing wafer scale vacuum encapsulation structure based on Fe Getter Films Prepared,
Its basic structure such as embodiment 16, wherein, the non-refrigeration infrared detector chip reads non-refrigeration infrared detector core for light
Piece.Since the non-refrigeration infrared detector chip 4 to be encapsulated is light playback mode, the substrate slice 1 needs to select thoroughly visible
The sheet glass of light, the gasket 2 select it is double throw sheet glass or potsherd, the substrate slice 1 and gasket 2 by complex metal layer-
Solder-complex metal layer bonds together to form encapsulation cavity, is not related to the making of through-hole structure and metal column in technical process, in fixation
When light reads non-refrigeration infrared detector chip, it should be noted that by the visible reflectance of chip facing towards the glass substrate of saturating visible ray
1 side, and infrared absorption layer is then towards 3 side of infrared filter.
As described above, the present invention provides a kind of mixing wafer-level vacuum encapsulating method and structure based on Fe Getter Films Prepared,
Including step：A) one gasket, a substrate slice and a cover plate are provided, package cavity is formed in the gasket；B) it is bonded the gasket
And the substrate slice；C) one chip to be packaged is provided, the chip to be packaged is bonded to the substrate slice by bonding structure,
Or the chip to be packaged is bonded to the cover plate by bonding structure；D) getter is provided, and the getter is fixed
In the coverslip surface towards the package cavity；E) one vacuum equipment is provided, after the encapsulation cavity and cover plate alignment, taken out
Vacuum, activated degasser and heating pressurization, the cover plate and the gasket are bonded by bonding structure.The present invention is based on MEMS skills
Art makes encapsulation cavity, and non-refrigeration infrared detector chip is placed in chip intracavitary completes Vacuum Package, is conducive to protect non-cause
Fragile micro-structure on cold infrared detector chip, and it is provided with the efficiency of wafer level packaging；Want to maintain using Fe Getter Films Prepared
The vacuum degree of cavity can reduce the volume of Vacuum Package；It is only true to being carried out by the non-refrigeration infrared detector chip of test
Sky encapsulation, reduces packaging cost.So the present invention effectively overcomes various shortcoming of the prior art and has high industrial profit
With value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of mixing wafer-level vacuum encapsulating method based on Fe Getter Films Prepared, which is characterized in that include the following steps：
A) one gasket, a substrate slice and a cover plate are provided, chip package chamber, the shape in the substrate slice are formed in the gasket
The through-hole knot for chip lead to be packaged is formed into the through-hole structure for chip lead to be packaged or in the cover plate
Structure, and form metal column in the through-hole structure of the substrate slice or form metal column in the through-hole structure of the cover plate；
B) it is bonded the gasket and the substrate slice forms encapsulation cavity；
C) one is provided by the chip to be packaged of test, and bonding structure key has been passed through by the chip to be packaged of test by described
The cover plate has been bonded to by bonding structure by the chip to be packaged of test together in the substrate slice or by described；
D) getter is provided, and the getter is fixed on the coverslip surface towards the chip package chamber；
E) one vacuum equipment is provided, after the encapsulation cavity and cover plate alignment, vacuumized, activated degasser and heating add
Pressure, the cover plate and the gasket are bonded by bonding structure.
2. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Step
It is rapid a) in further include the step of vacuum buffer chamber is formed in the gasket, and the vacuum buffer chamber is located at the chip package
The peripheral region of chamber.
3. the mixing wafer-level vacuum encapsulating method according to claim 2 based on Fe Getter Films Prepared, it is characterised in that：Step
It is rapid d) to further include the step of fixing getter in the vacuum buffer chamber.
4. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Institute
The type for stating chip to be packaged includes non-refrigeration infrared detector chip, micromechanical gyro chip, accelerometer chip, resonator
Chip, feds chip, pressure sensor chip and light micro mechanical device chip.
5. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Institute
Chip to be packaged is stated as non-refrigeration infrared detector, the cover plate is to include double throwing silicon chips, germanium wafer and the infrared absorption filter for vulcanizing zinc metal sheet
Wave plate, and the infrared filter surface is formed with infrared anti-reflection film.
6. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Step
The type of rapid bonding pattern b) includes anode linkage, silicon-silicon bond closes and complex metal layer-solder-complex metal layer key
It closes.
7. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Step
Lamination of rapid bonding structure c) and described in step e) for complex metal layer-solder-complex metal layer composition.
8. the mixing wafer-level vacuum encapsulating method according to claim 7 based on Fe Getter Films Prepared, it is characterised in that：Institute
The type for stating complex metal layer includes Cr/Au, Cr/Cu, Cr/Ni/Au, Ti/Ni/Au, Ti/W/Ni/Au；The type of the solder
Including AuSn, AgSn, InSn, PbSn, CuSn.
9. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：Institute
State gasket type include it is double throw sheet glass, double throwing silicon chips and potsherd, the type of the substrate slice includes double sheet glass, double thrown
Throw silicon chip and potsherd.
10. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：
The cover plate is the full wafer to match with the size of the substrate slice or is to be fixed on what is matched with the size of the substrate slice
Separate sheet in fixture.
11. the mixing wafer-level vacuum encapsulating method according to claim 1 based on Fe Getter Films Prepared, it is characterised in that：
The ingredient of the getter includes one kind or the combination of zircaloy and titanium alloy.
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| CN104649218B (en) * | 2015-02-12 | 2018-08-10 | 上海集成电路研发中心有限公司 | A kind of wafer-level vacuum encapsulating method |
| CN105244384A (en) * | 2015-08-27 | 2016-01-13 | 无锡伊佩克科技有限公司 | Vacuum packaging structure of infrared imaging chip |
| CN107727246A (en) * | 2016-08-10 | 2018-02-23 | 菱光科技股份有限公司 | The infrared ray sensor and its method for packing of high vacuum |
| CN107055456A (en) * | 2017-04-14 | 2017-08-18 | 上海华虹宏力半导体制造有限公司 | The encapsulating structure and method of mems device |
| CN107316844B (en) * | 2017-06-22 | 2019-05-31 | 江苏物联网研究发展中心 | Electrical activation sealing cap structure for wafer-level vacuum packaged getter |
| CN109273461A (en) * | 2018-10-19 | 2019-01-25 | 南京方旭智芯微电子科技有限公司 | A kind of wafer-level packaging infrared detector and preparation method thereof |
| CN109668661B (en) * | 2018-12-07 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | GaN high-temperature pressure sensor |
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