CN105161413A - 加工多晶硅表面的方法以及加工基板表面的方法 - Google Patents

加工多晶硅表面的方法以及加工基板表面的方法 Download PDF

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CN105161413A
CN105161413A CN201510604497.2A CN201510604497A CN105161413A CN 105161413 A CN105161413 A CN 105161413A CN 201510604497 A CN201510604497 A CN 201510604497A CN 105161413 A CN105161413 A CN 105161413A
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polysilicon
film
polysilicon surface
material film
polishing
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CN105161413B (zh
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陆小勇
龙春平
刘建宏
詹裕程
李小龙
刘政
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BOE Technology Group Co Ltd
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Abstract

本发明提供一种加工多晶硅表面的方法和加工基板表面的方法。加工多晶硅表面的方法包括：使用化学机械抛光的工艺加工多晶硅表面；其中，在使用化学机械抛光的工艺加工多晶硅表面之前，在多晶硅表面上沉积SiNx薄膜。本发明的方法加工后的多晶硅表面粗糙度达到低于6nm的水准。

Description

加工多晶硅表面的方法以及加工基板表面的方法
技术领域
本发明涉及半导体表面加工领域，具体地，涉及加工多晶硅表面的方法和加工基板表面的方法。
背景技术
目前的低温多晶硅薄膜工艺形成的多晶硅其表面粗糙不平的地方主要出现在晶粒交汇的边界处，即晶界处。粗糙表面的形成机制可以归因于熔融硅与固态硅的密度差异。固化过程始于形核中心，最后固化的是晶粒边界处，在晶界处同时存在熔融硅与固态硅，在形成晶粒的过程结束后在晶界处就形成了凸起。
附图1示出典型的低温多晶硅工艺形成的多晶硅的表面，其表面粗糙度达到9nm。
表面粗糙度与栅氧化层的漏电流呈正比，特别是多晶硅晶界所造成的表面粗糙度，容易造成局部突起而降低击穿电场与漏电流突增。一般而言，表面粗糙度增加一倍，漏电流增加两个数量级。为了平整化晶化过程中诱发的多晶硅表面粗糙度，栅绝缘层的厚度需要与多晶硅厚度以及粗糙度匹配。高的表面粗糙度就需要更大的栅绝缘层厚度去匹配。
从器件性能角度出发。在高分辨率成为趋势的现状下，为了增加反应速度，提高驱动电流与存储电容的容量，要求栅极绝缘层厚度不断降低。同时，由于降低栅绝缘层厚度，能够减少绝缘层内电荷捕获量的下降，因此，厚度的降低可减少阈值电压漂移。因此如何通过有效的手段降低多晶硅表面粗糙度，使低绝缘层厚度降低成为可能，此为一个重要的议题。
发明内容
鉴于此，本发明的目的在于提供一种提升低温多晶硅薄膜晶体管性能的制备方法，对多晶硅表面进行化学机械研磨工艺，对于多晶硅表面凸起进行腐蚀研磨，可有效改善多晶硅表面的粗糙度，降低界面缺陷，提升LTPS基板性能，进而获得比较稳定的TFT特性。
根据本发明一方面，提供一种加工多晶硅表面的方法，包括：使用化学机械抛光的工艺加工多晶硅表面；其中，在使用化学机械抛光的工艺加工多晶硅表面之前，在多晶硅表面上沉积材料薄膜，所述材料薄膜选择为使得在抛光过程中多晶硅优先被去除。
根据本发明另一方面，提供一种加工基板表面的方法，基板包括多晶硅区域和非多晶硅区域，所述方法包括：在基板表面形成掩膜覆盖非多晶硅区域；使用如前述方法加工多晶硅区域。
附图说明
图1示出通常的低温多晶硅工艺形成的多晶硅的表面，其表面粗糙度达到9nm；
图2示出示出使用根据本发明的一个实施例的方法加工后的多晶硅的表面，其表面粗糙度降低到6nm以下；
图3示出示出根据本发明的一个实施例的方法加工多晶硅表面的流程。
图4示出沉积有材料薄膜的多晶硅表面在抛光过程中的形态。
具体实施方式
现在对本发明的实施例提供详细参考，其范例在附图中说明，图中相同的数字全部代表相同的元件。为解释本发明下述实施例将参考附图被描述。
根据本发明的第一实施例，提供一种加工多晶硅(P-Si)表面的方法。在本发明的一个实施例中，方法包括使用化学机械抛光的工艺加工多晶硅表面。在抛光多晶硅表面的同时，可以使用例如碱性二氧化硅抛光液。在此抛光过程中，发生化学反应，化学反应方程式为：Si+H2O+2OH-＝>SiO3 2-+2H2。根据本发明的实施例的方法，利用碱与硅的化学腐蚀反应生成可溶性硅酸盐，再通过细小柔软、比表面积大、带有负电荷的SiO2胶粒的吸附作用及其与抛光垫和多晶硅表面间的机械摩擦作用，及时除去反应产物，去除表面凸起的一部分Si。
在本发明的一个实施例中，方法包括在使用化学机械抛光的工艺加工多晶硅表面之前，在多晶硅表面上沉积SiNx薄膜。例如，在多晶硅的表面沉积SiNx薄膜厚度约为80～120埃，优选90～110埃，优选为100A埃。可选地，可以选用化学气相沉积(CVD)的方法沉积SiNx薄膜。图3示出从P-Si至覆盖有SiNx薄膜的P-Si以及SiNx薄膜被部分去除的P-Si以及最后抛光的P-Si。优选地，使用等离子体增强化学气相沉积(PECVD)的方法沉积SiNx薄膜。本领域技术人员应该理解，可以采用其他熟知的薄膜沉积或外延方法在多晶硅表面形成SiNx薄膜。优选使用等离子体增强化学气相沉积(PECVD)的方法是因为在实际生产过程中，该方法效率和成本控制相对较好。
在本发明的一个实施例中，使用化学机械抛光工艺加工沉积了材料薄膜的多晶硅表面的过程包括去除材料薄膜的第一阶段和同时去除材料薄膜和多晶硅的第二阶段，其中在第二阶段，多晶硅优先被去除。应该理解，使用两个阶段仅是为了方便说明。
图4更加详细地示出沉积有材料薄膜20(例如，SiNx)的多晶硅10表面在抛光过程中的形态。在图4的上图中，下层的多晶硅10上覆盖有SiNx20(如图所示)，此时SiNx20未被抛光去除。由于多晶硅10上表面的凸凹不平(图中放大了多晶硅10表面的凸凹不平)，在多晶硅10表面的凹处SiNx20的厚度较大，在多晶硅10表面的凸处SiNx20的厚度较小。随着化学机械抛光的进行，SiNx20被不断减薄，部分多晶硅10表面暴露出来(如图4的下图所示)，此时SiNx和部分多晶硅表面同时暴露于化学机械抛光液和机械抛光的作用之下，由于化学机械抛光液对多晶硅的蚀刻能力更强，因而多晶硅被优先蚀刻去除，从而粗糙的多晶硅表面的凸起部分被磨平。在本实施例中，化学机械抛光工艺采用碱性二氧化硅抛光液。
在本发明的一个实施例中，方法包括在使用化学机械抛光的工艺加工多晶硅表面之前，在多晶硅表面上沉积SiOx薄膜(图中未示出)。在多晶硅的表面沉积SiOx薄膜厚度例如约为800～120埃，优选90～110埃。可选地，可以通过氧化法在P-Si上形成SiOx，这种方法方便，工艺成熟，并且可以在干燥期间通过调整温度和时间实现氧化处理，便于工艺设计。可选地，可以选用化学气相沉积(CVD)的方法沉积SiOx薄膜。优选地，使用等离子体增强化学气相沉积(PECVD)的方法沉积SiOx薄膜。本领域技术人员应该理解，可以采用其他熟知的薄膜沉积或外延方法在多晶硅表面形成SiOx薄膜。优选使用等离子体增强化学气相沉积(PECVD)的方法是因为在实际生产过程中，该方法效率和成本控制相对较好。
采用SiOx薄膜进行化学机械抛光的过程与采用SiNx薄膜20的化学机械抛光的过程类似，其具体过程不再赘述。
在本发明的其他实施例中，可以在P-Si(多晶硅)10上形成其他硅的化合物，甚至其他材料，只要这种材料在使用抛光液抛光的时候，抛光液处理多晶硅的速率更大一些即可。在使用抛光液抛光的过程中，由于抛光液对多晶硅和覆盖在多晶硅上的材料的刻蚀作用差异，当覆盖在多晶硅上的材料被部分去除时，部分多晶硅暴露出来，即，此时多晶硅10和覆盖多晶硅的材料同时暴露出来，多晶硅10会被更快地去除，最后覆盖多晶硅的材料也被去除，停止抛光，由此降低多晶硅表面10的粗糙度。
根据本发明的实施例的方法，可以对多晶硅表面预处理。即，在沉积例如SiNx20薄膜之前，清洗多晶硅表面10。可以采用去离子水清洗多晶硅表面，也可以采用有机溶剂清洗多晶硅表面。例如，采用喷射去离子水清洗多晶硅表面，或采用喷射有机溶剂清洗多晶硅表面。
根据本发明的一个实施例的方法包括在多晶硅表面沉积例如SiNx薄膜的材料薄膜，随后，抛光沉积有例如SiNx薄膜的材料薄膜20的多晶硅表面10。如图3中，对覆盖有例如SiNx薄膜的材料薄膜20的P-Si10进行抛光得到图中第三行的抛光后的覆盖有例如SiNx薄膜的材料薄膜的P-Si10。在根据本发明的一个实施例中，所述方法使用化学机械研磨处理多晶硅表面，即使用化学机械研磨的方法，同时在处理多晶硅表面的同时使用碱性多晶硅研磨液。在此抛光过程中，尤其参照附图4，SiNx20和部分多晶硅10同时暴露于抛光液，SiNx20和部分多晶硅10与抛光液发生化学反应，化学反应方程式为：Si+H2O+2OH-＝>SiO3 2-+2H2。根据本发明的实施例的方法，利用碱与硅的化学腐蚀反应生成可溶性硅酸盐，再通过细小柔软、比表面积大、带有负电荷的SiO2胶粒的吸附作用及其与抛光垫和多晶硅表面间的机械摩擦作用，及时除去反应产物，去除表面凸起的SiNx和一部分Si，如图所示，得到图3中最后一行的处理后的P-Si。在一个优选的实施例中，化学机械抛光的碱性二氧化硅抛光液可以是超细固体粒子研磨剂(如纳米SiO2、Al2O3粒子等)、表面活性剂、稳定剂、氧化剂等组成，固体粒子提供研磨作用,化学氧化剂提供腐蚀溶解作用，研磨速率例如为30～100A/min，研磨时间例如为20s～60s。在本发明的其他的实施例中，研磨剂、研磨时间、研磨速率可以是其他组合。
根据本发明的一个实施例的方法可以还包括使用蚀刻溶液湿法刻蚀多晶硅表面。使用蚀刻溶液湿法刻蚀多晶硅表面可以去除表面的SiNx。使用蚀刻溶液湿法刻蚀多晶硅表面还可以去除化学机械研磨处理过程产生的残留在多晶硅表面上的颗粒。
使用蚀刻溶液湿法刻蚀SiNx20或SiOx(图中未示出)是有利的，由于使用湿法刻蚀不要求真空，因而工艺易于实现，并且使用蚀刻溶液相对便宜，成本较低。
由此，通过使用根据本发明的实施例的方法加工多晶硅，加工后的多晶硅表面的粗糙度可以达到<6nm的水准，比现有技术中加工后的多晶硅表面的粗糙度大大降低。图2示出使用本发明的实施例的方法处理后的多晶硅表面。
进一步，在本发明的一个实施例中，在湿法刻蚀例如SiNx的材料薄膜去除表面沉积的薄膜材料的步骤中，使用超声波震荡，以便通过超声波提供能量，加速表层化合物剥离。
更进一步，所述超声波频率在50kHz至120kHz范围内，该超高频对多晶硅损伤极小，适用于制造半导体器件。
本发明的实施例在抛光多晶硅表面之前在多晶硅表面沉积例如SiNx薄膜的材料薄膜是有利的，由于沉积的例如SiNx薄膜20的材料薄膜，使得由于碱性多晶硅抛光液对多晶硅10的研磨选择比比例如SiNx20或材料薄膜中的材料大，有利于研磨掉表面凸起的多晶硅10。需要说明的是，进行化学机械抛光的工艺时，抛光液可以根据材料薄膜以及多晶硅10进行选择，以满足合适的选择比，使得多晶硅10优选被刻蚀即可。
在本发明的一个实施例中，可以对形成有器件的基板中的多晶硅进行加工。在加工多晶硅表面之前使用掩膜覆盖多晶硅以外的区域，掩膜的选择要求是在随后的抛光和湿法蚀刻过程中，掩膜不会被去除，从而对多晶硅的处理不会影响基板上的其他器件或部件。
在多晶硅表面的粗糙度达到预定要求后，使用相应合适的湿法刻蚀去掉掩膜。
在本公开的说明书中，多晶硅表面既可以表示不包含任何其他材料或膜的多晶硅，也可以表示已经被处理的多晶硅表面或已经沉积膜的多晶硅表面。
尽管已经参考本发明的典型实施例，具体示出和描述了本发明，但本领域普通技术人员应当理解，在不脱离所附权利要求所限定的本发明的精神和范围的情况下，可以对这些实施例进行形式和细节上的多种改变。

Claims (14)

1.一种加工多晶硅表面的方法，包括：
在多晶硅表面上沉积材料薄膜；
使用化学机械抛光工艺加工沉积了材料薄膜的多晶硅表面；
其中，所述材料薄膜选择为使得在抛光过程中多晶硅优先被去除。
2.根据权利要求1所述的方法，其中使用化学机械抛光工艺加工沉积了材料薄膜的多晶硅表面的过程包括去除材料薄膜的第一阶段和同时去除材料薄膜和多晶硅的第二阶段，其中在第二阶段，多晶硅优先被去除。
3.根据权利要求1所述的方法，其中使用采用碱性二氧化硅抛光液的化学机械抛光的工艺加工沉积有材料薄膜的多晶硅表面。
4.根据权利要求1所述的方法，所述材料薄膜为SiNx薄膜。
5.根据权利要求1所述的方法，所述材料薄膜为SiOx薄膜。
6.根据权利要求4所述的方法，其中在多晶硅表面上沉积的SiNx薄膜厚度为80～120埃。
7.根据权利要求6所述的方法，其中在多晶硅表面上沉积的SiNx薄膜厚度为100埃。
8.根据权利要求1所述的方法，其中在使用化学机械抛光的工艺加工多晶硅表面之后使用蚀刻溶液湿法刻蚀多晶硅表面。
9.根据权利要求8所述的方法，在使用蚀刻溶液湿法刻蚀多晶硅表面的同时，使用超声波震荡，所述超声波频率在50kHz至120kHz范围内。
10.根据权利要求4所述的方法，使用等离子体增强化学气相沉积(PECVD)的方法沉积SiNx薄膜。
11.根据权利要求5所述的方法，使用氧化法形成SiOx薄膜或等离子体增强化学气相沉积(PECVD)的方法沉积SiOx薄膜。
12.根据权利要求1所述的方法，包括在沉积材料薄膜之前清洗多晶硅表面的预处理步骤。
13.一种加工基板表面的方法，基板包括多晶硅区域和非多晶硅区域，所述方法包括：
在基板表面形成掩膜覆盖非多晶硅区域；
使用如前述权利要求中任一项的方法加工多晶硅区域。
14.根据权利要求13所述的加工基板表面的方法，还包括去除基板表面上形成的掩膜。
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