CN105097725A - 重构的***式半导体封装件 - Google Patents

重构的***式半导体封装件 Download PDF

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Publication number
CN105097725A
CN105097725A CN201510197294.6A CN201510197294A CN105097725A CN 105097725 A CN105097725 A CN 105097725A CN 201510197294 A CN201510197294 A CN 201510197294A CN 105097725 A CN105097725 A CN 105097725A
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CN
China
Prior art keywords
reconstruct
wafer attaching
attaching substrates
substrate
semiconductor package
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Pending
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CN201510197294.6A
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English (en)
Inventor
罗立德
赵子群
胡坤忠
雷佐尔·拉赫曼·卡恩
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Avago Technologies International Sales Pte Ltd
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Zyray Wireless Inc
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Publication of CN105097725A publication Critical patent/CN105097725A/zh
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Abstract

本发明涉及重构的***式半导体封装件。本发明描述了重构的半导体封装件以及制造该重构的半导体封装件的方法。在载体上形成晶圆附着基板的阵列。将半导体装置安装到每个所述晶圆附着基板的第一表面上。将***基板安装在每个半导体装置上。***基板电连接至相应的晶圆附着基板的第一表面。将模塑料填充在所述***基板内和之间的空间中，以形成重构的半导体封装件的阵列，所述***基板被安装至它们相应的所述晶圆附着基板。电气连接件安装至所述晶圆附着基板的第二表面。分离重构的半导体封装件的阵列穿过在每个晶圆附着基板之间和在相应的被安装的***基板之间的模塑料。

Description

重构的***式半导体封装件
技术领域
本申请要求于2014年5月21日提交的美国临时申请第62/001,367号的优先权，通过引用将其全部结合在本文中。
背景技术
半导体封装件可以是包含一个或多个半导体电子元件的金属、塑料、玻璃、或陶瓷壳体，还称为芯片或集成电路(IC)。封装件提供针对冲击和磨蚀，以及如湿气、氧化、热和污染物的环境因素的保护。线从封装件引出电触点或导并且连接到其他装置和/或连接到中间基板、或直接连接到电路板。封装件可具有用于装置的少到两个的引线或触点，诸如二极管，或者在微处理器情况下具有几百个引线或触点。
半导体封装件可以是专用的独立的装置，其可以安装至最终产品的印刷电路板(PCB)或者印刷线路板(PWB)。IC可以连接至各种布局以及多层层叠的基板。此外，封装件可以安装在其他封装件上以形成封装件上封装件装置。
用户产品因具有多个特征和功能而变得更复杂。此外，许多用户产品变得更小，尤其是无线装置。因此，制造商利用封装件替换装置作为在更小的区域中实现更多特征和功能的方法。
发明内容
实施方式包括一种重构的半导体封装件(reconstitutedsemiconductorpackage)，具有位于载体上的单独的晶圆附着基板(die-attachsubstrate)的阵列。封装件还具有多个半导体装置，均安装并且电气连接至相关联的所述晶圆附着基板的第一表面。封装件还具有多个单独的***基板(interposersubstrate)，该多个单独的***基板均安装在相关联的所述半导体装置上并且电气连接至相关联的所述晶圆附着基板的第一表面。封装件还具有封装料(例如，模塑料(moldingcompound))，该封装料填充在每个所述***基板之间和四周的空隙内以形成多个重构的半导体封装件，所述***基板被安装至与所述***基板相关联的所述晶圆附着基板。封装件具有电气连接件，该电气连接件安装至每个晶圆附着基板的第二表面。每个重构的半导体封装件的分离(singulation)切割穿过(cutthrough)在每个晶圆附着基板之间和在相应的被安装的***基板之间的模塑料。
其中，所述单独的晶圆附着基板的阵列包括重构的工作基板。
其中，所述模塑料覆盖所述晶圆附着基板和所述***基板的四个侧壁。
其中，所述半导体装置包括倒装芯片装置。
其中，所述半导体装置包括丝焊(wirebonded)装置。
其中，所述电气连接件包括导体的栅格阵列。
其中，在所述分离处理中不会横贯所述晶圆附着基板和所述***基板。
其中，所述重构的半导体封装件包括封装件上的***式封装件(interposerpackage-on-package)。
其中，所述***基板的大小不同于所述晶圆附着基板的大小。
实施方式还包括一种形成半导体封装件的方法。该方法包括：在载体上形成晶圆附着基板的阵列，并且将半导体装置安装到每个所述晶圆附着基板的第一表面上。方法还包括形成至多个***基板的焊球或导电柱连接件，将各个***基板安装在相应的半导体装置上，并且经由所述焊球或所述导电柱连接件，将所述***基板电连接至相应的所述晶圆附着基板的第一表面。该方法还包括将模塑料填充在***基板内和之间的空间中，以形成重构的半导体封装件的阵列，所述***基板被安装至它们相应的所述晶圆附着基板。该方法还包括将电气连接件安装至所述晶圆附着基板的第二表面，并且分离所述重构的半导体封装件的阵列穿过每个晶圆附着基板之间和相应的被安装的***基板之间的模塑料。
其中，所述重构的半导体封装件的阵列包括在每个所述晶圆附着基板之间和在它们相应的被安装的***基板之间的间隙。
其中，所述分离没有切割穿过所述晶圆附着基板或所述安装的***基板中的任意一个。
其中，所述模塑料填充在每个所述晶圆附着基板与它们相应的被安装的***基板之间的间隙。
其中，所述分离切割穿过所述晶圆附着基板。
其中，所述分离切割穿过所述***基板。
该方法进一步包括在粘合胶带载体上形成所述晶圆附着基板的阵列。
该方法进一步包括：通过焊接掩模暴露所述粘合胶带载体的一部分以形成焊料模版(solderstencil)。
该方法进一步包括在所述焊料模版的暴露部分内形成焊接电气连接件。
本实施方式还包括一种重构的***式封装件。重构的***式封装件具有***基板，该***基板电气地安装至重构的晶圆附着基板并且横跨安装在重构的晶圆附着基板的第一表面上的集成电路上。***式封装件还具有填充在***基板与重构的晶圆附着基板的第一表面之间的空隙内的模塑料。模塑料的分离的表面同样沿着安装至重构的晶圆附着基板的***基板的边缘驻留。重构的***式封装件具有在重构的晶圆附着基板的第二表面上以网格排列形成的外部电气连接件。
其中，一个或多个重构的***式封装件被装配到基带微处理器、机顶盒微处理器、服务器信息块微处理器或者加密/安全性微处理器中的一个。
已经通过总体介绍的方式提供了前述段落，但并不旨在限制以上权利要求的范围。通过参照以下结合附图所做的详细描述，可更好地理解所描述的实施方式和另外的优点。
附图说明
本公开的更完整的评价和其许多附带的优点将容易地被获得，如同当结合附图考虑时参考以下具体实施方式，其变得更好地理解，在附图中：
图1A至图1B是根据实例的IC晶片和单独的分离IC的示意图；
图2A至图2B是根据实例的IC的活性表面上的焊接点图案的示意图；
图3A至图3B是根据实例的基板面板和单独的晶圆附着基板的示意图；
图4A至图4B是根据实例的附着至晶圆附着基板的IC焊料凸起(solder-bump)的示意图；
图4C是根据实例的IC丝焊至晶圆附着基板的示意图；
图5A至图5B是根据实例的基板面板和单独的***基板的示意图；
图5C是根据实例的***基板形成件的示意图；
图5D至图5E是根据实例的将***基板连接至包含倒装芯片IC的晶圆附着基板的示意图；
图5F是根据实例的连接至包含丝焊的IC的晶圆附着基板的***基板的示意图；
图6包含根据实例的芯片附加粘合剂图案的示意图；
图7A至图7B是根据实例的安装至载体的重构的封装件的示意图；
图8A示出根据实例的填充在重构的封装件之内和四周的模塑料；
图8B示出根据实例移除模塑膜和载体以及焊球外部连接件；
图8C示出根据实例的重构的封装件的分离；
图9A示出根据实例的代替芯片附加粘合剂的模塑料；
图9B示出根据实例的代替芯片附加粘合剂和芯片底部填充的模塑料；
图10A至图10E示出了示出根据一些实例的重构的***式半导体封装件；以及
图11是根据实例的形成半导体封装件的方法的流程图。
现在参考附图，其中贯穿几个视图，相同的参考标号表示相同或对应的部分。
具体实施方式
多个IC可以装配在基板上并且利用丝焊和/或金属图案相互连接以形成封装件。多芯片IC封装件的实例是应用型微处理器，其可以包括用于这类东西的分开的IC作为相同的封装件内的存储器。
IC可以以晶片级(waferlevel)形式制造，其中10个、100个或1000个IC形成在单个半导体晶片内。晶片材料可以是硅、砷化镓或其他半导体材料。图1A示出包含多个IC110的晶片100。IC110在形状上可以是正方形或矩形以及适于具体制造过程的其他形状。IC110在分离处理中彼此分离，分离处理可以通过划出单独的IC110之间的边界线，然后将IC110锯切、断开或切割分离。
图1B示出IC110的截面区域。IC110具有非活性表面120和活性表面130。活性表面130具有多个电导电气连接件区域或接触焊盘140，其被设计成使IC110与其他装置或基板相互连接。IC接触焊盘可以具有多层，被称为下凸起(under-bump)金属喷镀(UBM)。底部导电层可以包括铝。因为焊接材料不能很好地粘着至铝，所以另外的金属或导电层可以被图案化在铝衬垫上。示例性UBM可以包括铝、镍钒以及铜的组合物。然而，通过本文中描述的实施方式可以想到多种其他UBM材料。本文中涉及的接触焊盘可以包括UBM层。
接触焊盘140可以以各种结构布置，其取决于将被连接至另一个装置或基板的介质。图2A示出IC110的顶视图，示出了主要布置在IC110的活性表面130的中心的多个接触焊盘140。这个结构可以用于倒装芯片类型的装置，其中，该装置可以具有连接至接触焊盘140的焊料凸起或铜柱。倒装芯片装置和连接的焊料凸起是“反转的(flippedover)”并且连接至另一个装置或基板的接触焊盘。图2B示出IC110的顶视图，示出了主要布置在IC110的活性表面130的周界四周的多个接触焊盘140。这个结构可以用于丝焊类型的装置。丝焊装置被附接，诸如层叠的装置或并列的丝焊装置。结合的配线将丝焊装置的接触焊盘140连接至另一个装置或基板的接触焊盘。
本文中描述的实施方式包括将单独的IC附接至基板。图3A示出基板面板300，其可用于形成单独示出为310的多个晶圆附着基板。基板面板300可以由以下材料制成，诸如伸缩胶带材料、陶瓷材料、有机复合材料、基于树脂的材料、引线框架或可以支持一个或多个IC110的其他类似的材料。基板面板300形成为包括一个或多个路由层和一个或多个电绝缘层。通过电绝缘层形成电气导电通孔。位于基板面板300的第一表面上的导电接触焊盘由路由层和通孔通过基板面板300连接至位于基板面板300的第二表面上的接触焊盘。
基板面板300被分成单独的晶圆附着基板310，该晶圆附着基板可以与上述晶片100的分离相类似地进行分离。图3B示出示例性单独的晶圆附着基板310的横截面。晶圆附着基板310具有在第一表面上图案化的金属喷镀或接触焊盘320。形成导电通孔330通过晶圆附着基板310并且电气连接至位于晶圆附着基板310的第二表面上的接触焊盘。晶圆附着基板310提供将上表面上的具有相互连接的接触焊盘的特定图案，例如，具有相互连接的接触焊盘或金属喷镀的不同的图案的一个或多个IC110连接至PCB的界面。在实例中，下部接触焊盘340可以被图案化以匹配标准的或普遍使用的PCB图案。
在将基板面板300分离成单独的晶圆附着基板310之后，单独的晶圆附着基板310被测试并且被分类成工作基板和故障基板。测试可以包括但不限于通过应用探针至基板的导电功能部件，以提供测试信号和测量测试结果的功能测试。还可以进行环境测试，诸如暴露于湿气、极端温度和电击。被确定为非工作的晶圆附着基板310可以由墨水渍、激光刺点或用于随后识别为非工作基板的其他类型的标记来标记。这提供了以下优势：即仅利用良好的工作基板继续处理。在进一步投资材料和资源之前在过程初期移除故障基板。还可以在分离之前在面板300中进行基板测试。
图4A示出了向下面向晶圆附着基板420的焊料凸起430的反转位置的IC410。IC410是倒装芯片，其中焊料凸起430已附接至IC410的活性表面。焊料凸起430可以包括金属芯，诸如具有外部焊接薄膜的铜。焊料凸起430还可以包括没有金属芯的全部焊接材料，诸如锡/银焊料。焊料凸起430还可以是顶端涂有锡/银焊料的铜柱。图4B示出IC410上的焊料凸起430附接至晶圆附着基板420的上表面上的接触焊盘。粘性材料可用于将IC410与它们相应的晶圆附着基板420一起临时保持在原地。例如，焊接剂可以应用于接触焊盘以将焊料凸起430保持在原地直至完成回流。为简单起见，图4A和图4B仅示出一个IC410和一个匹配的晶圆附着基板420。然而，IC410与重新组成的载体上的各个工作晶圆附着基板420匹配。晶圆附着基板420和匹配的IC410的整个重构的载体暴露于在焊料凸起430的回流温度以上的温度下的回流处理。回流处理将各个IC410机械地并电连接至其相应的晶圆附着基板420。在实施方式中，毛细管底部填充材料(capillaryunderfillmaterial)440可用于封装各个IC410和其相应的晶圆附着基板420之间的焊料凸起430。毛细管底部填充材料440是用于保护焊料凸起连接件免受氧化作用等环境和物理要素影响的绝缘的和非导电的材料。
图4C示出以面向上的位置连接至晶圆附着基板420的IC410。IC410的非活性表面通过粘性材料附接至晶圆附着基板420。IC410的活性表面包含接触焊盘435，通过结合配线(bondingwire)450将其连接到晶圆附着基板420上的接触焊盘445。结合配线450可以由耐氧化材料制成，诸如黄金、钯涂覆的铜或银。在实施方式中，绝缘封装材料460可以形成在IC410的结合配线450和接触焊盘435以及晶圆附着基板420的接触焊盘445上，以保护结合配线450和相应的接触焊盘免受物理和环境要素的影响。可选择的封装材料460可以通过液滴顶部处理(globtopprocess)的方式来应用作为示例。如硅酮或具有高粘度的环氧树脂的液滴顶部材料使得其可以在没有侧向限制的情况下基本应用于平面。然而，通过本文中描述的实施方式可以预料到封装结合配线和相关联的接触焊盘的其他方法。封装材料460还提供以下优势：即防止配线在未来的模制工序中被清除。结合配线450上的封装材料460防止当模制材料流动通过IC410时结合配线450彼此接触。为简单起见，图4C仅示出一个IC410和一个匹配的晶圆附着基板420。然而，IC410与重新组成的载体上的各个工作晶圆附着基板420相匹配。
图5A至图5F示出了形成并集成***基板的方法，如本文中描述的实施方式中所使用的。材料和处理可以与以上参考图3A至图3B论述的晶圆附着基板处理类似。图5A示出了基板面板500，其可用于形成单独示出为510的多个***基板。基板面板500可以由以下材料制成，诸如伸缩胶带材料、陶瓷材料、有机复合材料、基于树脂的材料、引线框架或其他类似的材料。基板面板500被分离成单独的***基板510，其可以与上述晶片100分离处理相类似的处理来进行分离。
图5B示出示例性的单独的***基板510的横截面。***基板510具有在第一表面上图案化的金属喷镀或接触焊盘520。导电通孔530贯穿***基板510形成并且电连接至位于***基板510的第二表面上的接触焊盘540。例如，导电通孔530使被图案化为接收另外的装置或基板的上部接触焊盘520重定向为被图案化为与晶圆附着基板连接的下部接触焊盘540。
图5C示出了连接至***基板510上的第二表面上的接触焊盘540的焊球550。焊球550可以在处理过程中通过如焊接焊剂的粘性材料临时保持在原位。焊球550通过将结合的***基板510和焊球550暴露于焊球550的回流温度以上的温度，从而被机械地并电连接至***基板510的接触焊盘540。
图5D示出了如何将***基板510安装在晶圆附着基板420的IC410上。焊球550横跨位于晶圆附着基板420的中心的IC410上。焊球550的大小足以在安装时将***基板510保持在IC410上。图5D示出了倒装芯片IC410，其中，IC410的非活性表面将连接至***基板510的第二表面。粘合剂560已应用于IC410的非活性表面。粘合剂560可以包括但不限于粘合剂、芯片附加薄膜、环氧树脂焊接焊剂或具有适于IC410和***基板510的邻接材料，并且适于IC410的操作温度的属性的其他粘性材料。粘合剂560可以以各种图案应用于IC410的非活性表面和/或***基板510的第二表面，如在图6中示出的。通过本文中描述的实施方式可以预料到粘合剂应用的其他图案。具体图案可以取决于以下因素：诸如但不限于IC410的大小、IC410的功率水平、IC410的散热、环境暴露、想要的最终半导体封装件的用途以及其他因素。
图5E示出了安装至晶圆附着基板420的***基板510，并且倒装芯片IC410安装在晶圆附着基板以形成重构的半导体封装件。如焊接焊剂的粘性材料可用于将焊球550与它们相应的晶圆附着基板420一起临时保持在原位。***基板510还附着于倒装芯片IC410的后侧。图5E的结合结构被暴露于回流处理以将焊球550机械地并电连接至晶圆附着基板420的接触焊盘(图5E中未示出)。粘合剂560可以在回流处理过程中被固化，或者附加处理可以实现为固化粘合剂560，优选地，在回流处理之后。在实施方式中，可以在一个回流处理中附接***基板510和IC410。
图5F示出了针对丝焊的IC410装配晶圆附着基板420和***基板510以形成另一个类型的重构的半导体封装件。因为IC410的活性表面面向***基板510，所以***基板510不连接或附着于IC410。焊球550的大小足以将***基板510保持在IC410上。另外的实施方式包括铜柱或焊接圆柱代替焊球550以确保***基板510在IC410以上足够的高度。粘性材料可用于将焊球或铜柱550与它们的相应的晶圆附着基板420一起保持在原位直至回流处理将焊球550永久连接至两个基板。
倒装芯片IC的图5E和丝焊IC的图5F仅为了示例性目的给出。可以和本文中描述的实施方式一起使用另一个类型的IC是IC在或者有或者没有芯片衬垫的情况下安装至引线框架。根据本文中描述的实施方式，利用一些调整，微电动机械***(MEMS)装置和光电装置可以被集成到重构的半导体封装件中。
在图4A至图5F中示出的装配过程中，有多个回流处理。对于倒装芯片IC410，焊料凸起430被回流连接至晶圆附着基板420(参见图4A)，焊球550被回流连接至***基板510(参见图5C)，并且焊球550被回流连接至晶圆附着基板420(参见图5E)。
根据本文中描述的实施方式，上述重构的半导体封装件可以被制备用于模具喷射(mold-injection)。图7A示出固定至重构的载体720的多个装配封装件710。各个装配封装件710包括在IC的第一表面处安装至晶圆附着基板的IC，以及安装在IC的第二表面上的***基板，其中***基板电气并机械地连接至晶圆附着基板。装配封装件710可以包括相同类型的IC或不同类型的IC。
图7B示出重构的载体720的顶视图，其中，单独的装配封装件在重构载体720上以矩形阵列间隔开。示出的是矩形面板载体；然而，其他形状的载体也在所描述的实施方式的范围内，诸如正方形面板载体或狭长的条形载体。重构的载体720可具有适合于保持并载运装配封装件710的阵列的各种材料。载体可以包括但不限于粘合胶带、陶瓷、玻璃、塑料、半导体材料、金属、或其他材料。粘合材料可以应用至载体的表面和/或至装配封装件710的表面。粘合材料可以包括但不限于环氧树脂或粘合膜。在实施方式中，粘合胶带被用于在处理过程中维持装配封装件710的位置。粘合胶带可以是面板构造，如重构的载体720，或者其可以是用于接收装配封装件710的阵列的粘合胶带的轴辊或条带。
图8A示出附接至重构的载体720的装配封装件710。重构的载体720可以在各个装配封装件710所放置的位置做标记。做标记可以对装配封装件710在重构的载体720上的正确的位置进行光学定位。模塑膜810被按压至装配封装件710的顶部表面。膜810通常不具有切口或开口。可替代地，可以在模塑膜810上制成并隔开如820的孔，以便允许模塑料830到达装配封装件710以内，以及到达单独的装配封装件之间的位置处。在实施方式中，孔820被放置在单独的装配封装件710之间的位置处。在另一个实施方式中，模塑料830在真空下以促进模塑料830移动到达装配封装件710以内和之间的所有空隙。在装配封装件710的顶部的模塑膜810将接触焊盘保持在干净的并且没有任何模塑料830的***基板的上表面上。同样地，装配封装件710的底部上的重构的载体720将接触焊盘保持在干净的并且没有任何模塑料830的晶圆附着基板的下表面上。
图8B示出了移除模塑膜810和重构的载体720。粘合胶带类型的重构的载体720可以通过机械去胶带或者将紫外光施加于重构的载体720以去激活胶带的粘合特性来进行移除。焊球840附接至晶圆附着基板的底面上的接触焊盘，以形成各个装配封装件710的球栅格阵列(BGA)。将焊剂施加于晶圆附着基板的接触焊盘以将焊球840保持在原位直至回流完成。重构的半导体封装件的实施方式可以应用于大多数类型的半导体封装件，例如但不限于细间距球栅格阵列(FBGA)、针栅阵列(PGA)、列栅格阵列(CGA)、平面栅格阵列(LGA)、Z-互联阵列以及其他。
另一个实施方式包括使用在图8A中示出的重构的载体720作为焊接模版。重构的载体720可以由聚合物或感光成像材料制成，其可以在暴露于紫外(UV)光时被图案化。包含与晶圆附着基板的底表面上的接触焊盘相匹配的多个开口的焊接掩模被放置在重构的载体720上。紫外光使得重构的载体720通过焊接掩膜中的开口暴露。移除重构的载体720的暴露的区域。焊球被放置在接触焊盘上的开口内。回流处理将焊球机械地和电连接至它们相应的接触焊盘。另一个实施方式提供一种焊膏(焊料和焊剂的混合物)，使用焊接敷帖器丝网印刷成开口。回流处理使得焊膏回流并且将产生的焊球或凸块连接至它们相应的接触焊盘。重构的载体720可以在回流处理之后移除，或者其可以保持在晶圆附着基板的底侧上。
图8C示出装配的和模塑的封装件被分离成单独的重构的半导体封装件800。分离可以通过切割、锯切、激光切片或者切割模塑料的任何其他方法来实现。通过实践本文中描述的，仅穿过模塑料时发生分离。当***基板和晶圆附着基板大小近似相同并且模塑料延伸超出基板的外周时，不会切割穿过***基板或晶圆附着基板。安装至它们相应的晶圆附着基板的***基板彼此分离以形成封装件之间的间隙(参见图7A至图8B)。因此，没有切割到任何一个基板，并且因此，分离处理没有浪费基板材料。并且，沿着基板的边缘模塑将增加最终封装件的保护。
图9A示出图5D中示出的处理的变型，其中粘合剂560被应用至IC410的后侧。当将***基板510安装至晶圆附着基板420时，粘合剂560还附着于***基板510。图9A示出IC和***基板之间没有粘合剂的情况。作为替代，模塑料830填充IC与***基板之间的间隙。真空模塑处理有助于确保模塑料到达封装件以内的所有空隙。
图9B示出在图9A中示出的相同的装置和处理，除了用模塑料830代替IC和晶圆附着基板之间的毛细底部填充材料之外。真空模塑处理有助于确保模塑料到达封装件以内的所有空隙。
图10A是根据本文中描述的实施方式的封装件半导体上的***式封装件的装置1000的示意图。***基板1090通过焊球1270a安装至晶圆附着基板1030。焊球1270a通过接触焊盘1300b被连接到***基板1090的底面1120b，并且焊球1270a通过接触焊盘1300a被连接到晶圆附着基板1030的顶面1060a。倒装芯片集成电路1150通过接触焊盘1300d被连接至晶圆附着基板1030的顶面1060a。模塑料1240填充***基板1090和晶圆附着基板1030之间的所有的空隙，并且沿着连接的***基板1090和晶圆附着基板1030的边缘进行填充。外部焊球1270b通过接触焊盘1300c附接至晶圆附着基板1030的底面1060b。如表面安装装置1210和倒装芯片装置1180的另外的装置通过接触焊盘1300被连接到***基板1090的顶面1120a。
图10B是连接至晶圆附着基板1020的倒装芯片IC1030和通过焊球1040连接至晶圆附着基板1020的***基板1010的示意图。封装1050填满***基板1010和晶圆附着基板1020之间和IC四周。封装1050还填充在两个基板的侧面周围。然而，***基板1010小于晶圆附着基板。在图10C中，示出类似的倒装芯片封装件，其中***基板1010大于晶圆附着基板1020。尽管未示出，但图10B和图10C的倒装芯片封装件具有连接至晶圆附着基板1020的底面的焊球，如在先前的附图中示出的。
图10D是多个晶圆附着基板1020的示意图，该多个晶圆附着基板具有连接至该处的相关联的倒装芯片IC1030，以及通过焊柱或导电柱1040连接至晶圆附着基板1020的相关联的***基板1010。封装1050被填充在***基板1010与晶圆附着基板1020之间。晶圆附着基板1020紧挨着彼此，这样封装1050仅沿着***基板1010侧面驻留，而不是沿着晶圆附着基板1020的侧面。在实施方式中，如先前所描述的，晶圆附着基板1020可以预先被分离、被测试并且在载体上被组合在一起。在另一个实施方式中，晶圆附着基板1020可以是一个整体基板或晶片，其在最终分离处理中被分离以形成单独的封装件。
图10E与在图10D中示出的封装件类似，除了***基板1010紧挨着彼此之外，这样封装1050仅沿着晶圆附着基板1020的侧面驻留，而不沿着***基板1010的侧面。在实施方式中，如先前所描述的，***基板1010可以预先被分离、被测试并且在载体上被组合在一起。在另一个实施方式中，***基板1010可以是一个整体基板或晶片，其在最终分离处理中被分离以形成单独的封装件。
图11是形成如重构的封装件上的***式封装件的半导体封装件1100的方法的流程图。在步骤S110中，在载体上形成晶圆附着基板的阵列。单独的晶圆附着基板的阵列可以包括重构的工作基板，其中基板被预先测试并且仅工作基板被保留以进行进一步的处理。载体可以是由粘合载体组成。在步骤S1120中，将半导体装置安装到每个晶圆附着基板的第一表面上。在实施方式中，半导体装置是倒装芯片装置。在另一个实施方式中，半导体装置是丝焊装置。
在步骤S1125中，形成多个***基板的焊球连接件。在步骤S1130中，将各个***基板安装在相应的半导体装置上。在步骤S1140中，将***基板通过焊球连接件电气并机械地连接至相应的晶圆附着基板的第一表面。在实施方式中，晶圆附着基板和***基板的大小近似相同。在另一个实施方式中，晶圆附着基板大于***基板。在又一个实施方式中，晶圆附着基板小于***基板。在步骤S1150中，将模塑料填充在安装至它们的相应的晶圆附着基板的***基板内和之间的空隙中，以形成重构的半导体封装件的阵列。在实施方式中，封装件的阵列在每个晶圆附着基板和它们的相应的安装***基板之间具有间隙。因此，模塑料填充晶圆附着基板和安装的***基板的每个重构的半导体封装件之间的间隙。
在步骤S1160中，将电气连接件安装至晶圆附着基板的第二表面。在实施方式中，电气连接件以栅格阵列图案安装。在步骤S1170中，分离重构的半导体封装件的阵列穿过每个晶圆附着基板和相应的所安装的***基板之间的模塑料。分离仅切割穿过模塑料。因为每对晶圆附着基板之间和相应的所安装的***基板之间存在间隙，所以分离处理不会切割到任意一个基板。
本文中描述的方法和装置是示例性的，并且给出以示出某些实施方式的特征和过程。实施方式不局限于特定的顺序或者本文中描述的示例性顺序。例如，可以在IC和晶圆附着基板连接件的制备之前进行***基板和电气连接件的制备。作为另一实例，***基板过程可以与IC和晶圆附着基板过程同时进行。
本文中所描述的重构的***式半导体封装件的实施方式可以被用在许多应用中，包括但不限于网络、移动设备、无线设备、可佩带的电子设备和宽带。在网络应用中，本文中描述的重构的***式半导体封装件可以用于多芯处理器、基于经验的处理器、服务器信息块(SMB)处理器、加密协同处理机和安全性处理器。在移动设备、无线设备应用和可佩带设备的应用中，本文中描述的重构的***式半导体封装件可以用于3G基带处理器、LTE基带处理器、移动视频处理器、移动图解处理器、应用处理器、触摸控制器、无线功率、物联网(IoT)和可佩带的芯片上***(SoC)、无线视频和天线。在宽带应用中，本文中描述的重构的***式半导体封装件可以用于有线机顶盒(STB)、卫星STB、互联网协议(IP)STB、地面STB、极高清晰度(HD)处理器、STB图解处理器和STB安全性处理器。这些装置和***可以用于以下产品，包括但不限于，路由器、智能手机、平板电脑、个人计算机和可佩带设备，诸如手表、鞋、衣物和眼镜。
前述论述仅公开并描述了本发明的示例性实施方式。本领域的技术人员理解的是，在不背离其精神或本质特性的情况下，本发明可体现为其他具体的形式。因此，本实施方式的公开内容旨在用于说明而不是限制实施方式和其他权利要求的范围。在此包括教导内容的容易辨别的任何变型的公开内容部分限定了前述权利要求书的术语的范围，使得没有主题专用于公众。

Claims (10)

1.一种重构的半导体封装件，包括：
位于载体上的单独的晶圆附着基板的阵列；
多个半导体装置，均安装并且电气连接至相关联的所述晶圆附着基板的第一表面；
多个单独的***基板，均安装在相关联的所述半导体装置上并且电气连接至相关联的所述晶圆附着基板的第一表面；
模塑料，填充在每个所述***基板之间和四周的空隙内以形成多个重构的半导体封装件，所述***基板被安装至与所述***基板相关联的所述晶圆附着基板；以及
电气连接件，安装至每个所述晶圆附着基板的第二表面，
其中，每个所述重构的半导体封装件的分离横贯每个所述晶圆附着基板之间和相应的被安装的所述***基板之间的所述模塑料。
2.根据权利要求1所述的重构的半导体封装件，其中，所述单独的晶圆附着基板的阵列包括重构的工作基板。
3.根据权利要求1所述的重构的半导体封装件，其中，所述模塑料覆盖所述晶圆附着基板和所述***基板的四个侧壁。
4.根据权利要求1所述的重构的半导体封装件，其中，所述半导体装置包括倒装芯片装置。
5.根据权利要求1所述的重构的半导体封装件，其中，所述半导体装置包括丝焊装置。
6.根据权利要求1所述的重构的半导体封装件，其中，所述电气连接件包括导体的栅格阵列。
7.根据权利要求1所述的重构的半导体封装件，其中，所述重构的半导体封装件包括封装件上的***式封装件。
8.根据权利要求1所述的重构的半导体封装件，其中，所述***基板的大小不同于所述晶圆附着基板的大小。
9.一种重构的***式封装件，包括：
***基板，电气安装至重构的晶圆附着基板的第一表面并且横跨安装在所述重构的晶圆附着基板的第一表面上的集成电路；
模塑料，填充在所述***基板与所述重构的晶圆附着基板的第一表面之间的空隙内，其中，所述模塑料的分离表面沿着所述***基板和所述重构的晶圆附着基板的边缘驻留；以及
外部电气连接件，以栅格阵列形成在所述重构的晶圆附着基板的第二表面上。
10.一种形成半导体封装件的方法，包括：
形成晶圆附着基板的阵列；
将半导体装置安装到每个所述晶圆附着基板的第一表面上；
形成至多个***基板的焊球或导电柱连接件；
将各个所述***基板安装在相应的所述半导体装置上；
经由所述焊球或所述导电柱连接件将所述***基板电连接至相应的所述晶圆附着基板的第一表面；
将模塑料填充在所述***基板内和之间的空间中以形成重构的半导体封装件的阵列，所述***基板被安装至它们相应的所述晶圆附着基板；
将电气连接件安装至所述晶圆附着基板的第二表面；以及
分离所述重构的半导体封装件的阵列穿过在每个所述晶圆附着基板之间和在相应的被安装的所述***基板之间的所述模塑料。
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