CN105091400A - Thermoelectric cooling integrated system - Google Patents
Thermoelectric cooling integrated system Download PDFInfo
- Publication number
- CN105091400A CN105091400A CN201510591058.2A CN201510591058A CN105091400A CN 105091400 A CN105091400 A CN 105091400A CN 201510591058 A CN201510591058 A CN 201510591058A CN 105091400 A CN105091400 A CN 105091400A
- Authority
- CN
- China
- Prior art keywords
- heat
- substrate
- radiating
- integrated system
- thermoelectric cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to a thermoelectric cooling integrated system. The thermoelectric cooling integrated system comprises a cold end substrate, P-N electric couple pairs and a radiator, wherein the radiator is provided with a radiating substrate and radiating fins, one side of the radiating substrate is connected with the radiating fins, and the other side of the radiating substrate is covered with a heat conducting insulation layer; one ends of the P-N electric couple pairs are connected with the heat conducting insulation layer through first electrodes, and the other ends of the P-N electric couple pairs are connected with the cold end substrate through second electrodes; the area of the radiating substrate is larger than that of the cold end substrate. According to the thermoelectric cooling integrated system, transmission of heat of the hot end is facilitated, and the refrigerating capacity and the conversion efficiency can be effectively improved.
Description
Technical field
The present invention relates to semiconductor refrigerating field, particularly relate to a kind of thermoelectric cooling integrated system.
Background technology
Thermoelectric cooling is also known as thermoelectric cooling or semiconductor refrigerating, and the core coolant parts of thermoelectric cooling technology are semiconductor refrigeration chip 10 (TEC, ThermoelectricCooler).As shown in Figure 1, semiconductor refrigeration chip 10 (TEC) generally include hot junction substrate 11, cold junction substrate 12 and the P-N type galvanic couple be located between hot junction substrate 11 and cold junction substrate 12 to 13 (leg), P-N type galvanic couple is connected with hot junction substrate 11 by the first electrode 14 one end of 13, and P-N type galvanic couple is connected with cold junction substrate 12 by the second electrode 15 other end of 13.Semiconductor refrigeration chip 10 mainly utilizes Peltier (Peltier) effect of P-N type galvanic couple to the thermoelectric semiconductor material of 13 (leg) to realize, and one end is cold, one end is hot, the temperature difference is formed at the two ends of semiconductor refrigeration chip 10, after TEC hot junction heat is released, TEC cold junction can produce certain cold, completes refrigeration.
Suppose that the product of semiconductor refrigeration chip 10 cold (or heat absorption) amount is Q
c; Electricity input power is P
i; Quantity of heat production is Q
h0; Refrigeration factor (or refrigerating efficiency) is ε, then have: Q
h0=Q
c+ P
i=(1+1/ ε) Q
c.The refrigeration factor of usual semiconductor 0.2 ~ 0.8, for ε=0.2, Q
h0=6Q
c, therefore, the hot-side heat dissipation amount Q of semiconductor refrigeration chip 10
h0much larger than cold junction refrigeratory capacity Q
c.And semiconductor refrigeration chip 10 is temperature-difference refrigerating, cold junction cryogenic temperature and refrigeratory capacity and warm end temperature difference closely related, the heat radiation in hot junction is better, and the refrigeratory capacity of cold junction is more, refrigerating efficiency is higher.Therefore, the refrigeration performance of semiconductor refrigeration chip 10 is except semiconductor material performance, and key problem is the heat radiation in TEC hot junction.
Theoretical according to thermoelectricity, the peltier effect of thermoelectric semiconductor material is knot circle effect, namely the heat in TEC hot junction produces at P-N type galvanic couple 13 and the first knot circle place of electrode 14, because the first electrode 14 adopts copper and relatively thin (being generally 0.2 ~ 0.3mm), its thermal resistance is relatively little, therefore, the temperature of the first electrode 14 approximate be considered as equal with tying boundary's temperature.Can infer thus, how the heat radiation in TEC hot junction mainly reduces by the first electrode 14 temperature T in TEC hot junction
hj.
For existing temperature-difference refrigerating integrated system, as shown in Figure 2, existing temperature-difference refrigerating integrated system comprises semiconductor refrigeration chip 10 and radiator 167, radiator 167 can be finned aluminum profile heat radiator or the heat-pipe type radiator (Fig. 2 is to comprise the gilled radiator of interconnective heat-radiating substrate 16 and radiating fin 17) by solution-air phase-change heat transfer, face-face coating technique is generally adopted between the hot junction substrate 11 of semiconductor refrigeration chip 10 and heat-radiating substrate 16, for increased thermal conductivity energy, a little heat-conducting silicone grease can be filled or utilize soldering tech to be engaged by above-mentioned two binding faces between two face-faces.Therefore, in existing temperature-difference refrigerating integrated system, mainly realize in conjunction with the hot junction substrate 11 of semiconductor refrigeration chip 10 and radiator 167 the first electrode 14 temperature T reducing TEC hot junction
hj.But the hot junction substrate 11 of semiconductor refrigeration chip 10 requires to have insulating properties, and therefore, hot junction substrate 11 adopts ceramic substrate usually.Because the thermal-conduction resistance of ceramic substrate is comparatively large, is unfavorable for heat conduction, heat radiation, causes the first electrode 14 temperature T
hjtemperature high, have impact on the refrigeration of existing temperature-difference refrigerating integrated system.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of thermoelectric cooling integrated system, and it is conducive to the heat transmission in hot junction, can effectively improve refrigerating capacity and conversion efficiency.
Above-mentioned technical problem is solved by following scheme:
A kind of thermoelectric cooling integrated system, is characterized in that, comprise cold junction substrate, P-N galvanic couple to and radiator; Described radiator is provided with heat-radiating substrate and radiating fin, and the side of described heat-radiating substrate engages with described radiating fin, and the opposite side of described heat-radiating substrate is coated with thermally conductive insulating layer; The right one end of described P-N galvanic couple is engaged with described thermally conductive insulating layer by the first electrode, and the right other end of described P-N galvanic couple passes through the second electrode and engages with described cold junction substrate; The area of described heat-radiating substrate is greater than the area of described cold junction substrate.
Wherein in an embodiment, the thickness H of described heat-radiating substrate meets formula (I):
Wherein, Q
hfor heat radiation power, L is the length that heat conducts along conduction orientation, and k is the thermal conductivity of heat-radiating substrate, and D is the cross-sectional width of heat-radiating substrate, Δ T
1for thermal source is poor to the thermograde on heat-radiating substrate border.
Wherein in an embodiment, described heat-radiating substrate is aluminium base, and the thermal conductivity of described heat-radiating substrate is 150 ~ 250W/mk.
Wherein in an embodiment, the gross area S of described radiating fin meets formula (II):
Wherein, Q
hfor heat radiation power, Δ T
2for the mean temperature of radiating fin and the difference of environment temperature, h is the average surface coefficient of heat transfer of radiating fin and environment.
Wherein in an embodiment, the parameter of described thermally conductive insulating layer is: thickness is 0.01 ~ 0.035mm, and thermal conductivity is greater than 30W/mk, is withstand voltagely greater than AC500V.
Wherein in an embodiment, described heat-radiating substrate is connected with described radiating fin by weld layer.
Wherein in an embodiment, described cold junction substrate is connected for bonding with described second electrode.
Wherein in an embodiment, described cold junction substrate is aluminium oxide ceramic substrate or aluminum nitride ceramic substrate.
Wherein in an embodiment, described heat-radiating substrate and several radiating fins described are formed in one.
In above-mentioned thermoelectric cooling integrated system, the design people has abandoned the hot junction substrate of traditional TEC, by arranging thermally conductive insulating layer by the first Electrode connection on heat-radiating substrate, like this, the P-N galvanic couple of energising then can through the thermally conductive insulating layer of less thermal resistance to the heat produced on the first electrode, be directly conducted to heat-radiating substrate, utilize the heat conduction that heat-radiating substrate is good, average temperature performance, heat is made to diffuse to radiating fin rapidly along the heat-radiating substrate that area is relatively large, heat exchange is carried out with air, thus the P-N galvanic couple completing energising is to producing the conduction heat exchange of heat to air, in addition, the area in conjunction with heat-radiating substrate is greater than the area of cold junction substrate, and the heat times over refrigeratory capacity can effectively be spread.Therefore, this thermoelectric cooling integrated system, is conducive to the heat transmission in hot junction, can effectively improve refrigerating capacity and conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing semiconductor refrigeration chip;
Fig. 2 is the structural representation of existing temperature-difference refrigerating integrated system;
Fig. 3 is the temperature profile of existing temperature-difference refrigerating integrated system;
Fig. 4 is the principle schematic of temperature-difference refrigerating integrated system of the present invention;
Fig. 5 is the temperature profile of temperature-difference refrigerating integrated system of the present invention;
Fig. 6 is a kind of concrete structure schematic diagram of temperature-difference refrigerating integrated system of the present invention;
Fig. 7 is the sectional view of Fig. 6 along A-A;
Fig. 8 is the cross-sectional schematic of the another kind of concrete structure of temperature-difference refrigerating integrated system of the present invention.
Detailed description of the invention
As shown in Figure 4, thermoelectric cooling integrated system, comprises cold junction substrate 21, P-N galvanic couple to 22 and radiator 234; Radiator 234 is provided with heat-radiating substrate 23 and radiating fin 24, and the side of heat-radiating substrate 23 is connected with radiating fin 24, and the opposite side of heat-radiating substrate 23 is coated with thermally conductive insulating layer 25; P-N galvanic couple is connected with thermally conductive insulating layer 25 by the first electrode 26 one end of 22, and P-N galvanic couple is connected with cold junction substrate 21 by the second electrode 27 other end of 22; The area of heat-radiating substrate 23 is greater than the area of described cold junction substrate 21.
In above-mentioned thermoelectric cooling integrated system, the design people has abandoned the hot junction substrate of traditional TEC, by arranging thermally conductive insulating layer 25, first electrode 26 is connected on heat-radiating substrate 23, like this, the P-N galvanic couple of energising then can through the thermally conductive insulating layer 25 of less thermal resistance to the heat that 22 produce on the first electrode 26, be directly conducted to heat-radiating substrate 23, utilize the heat conduction that heat-radiating substrate 23 is good, average temperature performance, heat is made to diffuse to rapidly radiating fin 24 along the heat-radiating substrate 23 that area is relatively large, heat exchange is carried out with air, thus the P-N galvanic couple completing energising produces the conduction heat exchange of heat to air to 22, in addition, the area in conjunction with heat-radiating substrate 23 is greater than the area of cold junction substrate 21, and the heat times over refrigeratory capacity can effectively be spread.Therefore, this thermoelectric cooling integrated system, is conducive to the heat transmission in hot junction, can effectively improve refrigerating capacity and conversion efficiency.
In order to improve radiating effect, the design people does following design for the thickness H of heat-radiating substrate 23: the thickness H of heat-radiating substrate 23 meets formula (I):
Wherein, Q
hfor heat radiation power, L is the length that heat conducts along conduction orientation, and k is the thermal conductivity of heat-radiating substrate 23, and D is the cross-sectional width of heat-radiating substrate 23, Δ T
1for thermal source is poor to the thermograde on heat-radiating substrate border.
The thickness H of heat-radiating substrate 23 meets the requirement of above-mentioned formula (I), can guarantee that the heat of the first electrode 26 effectively can conduct on heat-radiating substrate 23, samming, thus guarantee that heat conducts to radiating fin 24 rapidly, reach good radiating effect.
The material of above-mentioned heat-radiating substrate 23 can select metallic aluminium or metallic copper, and in the present invention, considering cost and performance, the material of heat-radiating substrate 23 is preferably metallic aluminium, and the thermal conductivity of metallic aluminium is preferably 150 ~ 250W/mk.
In the thermoelectric cooling integrated system of the application, realize final heat radiation mainly through radiating fin 24 and air exchange, therefore, the design of radiating fin is particularly important.The design people does following design for the gross area S of radiating fin 24: the gross area S of radiating fin 24 meets formula (II):
Wherein, Q
hfor heat radiation power, Δ T
2for the mean temperature of radiating fin 24 and the difference of environment temperature, h is the average surface coefficient of heat transfer of radiating fin 24 and environment.
The area S of radiating fin 24 meets the requirement of above-mentioned formula (II), can guarantee that heat can be completed by radiating fin 24 and heat exchange between ambient air, reach good radiating effect.
In the present invention, the parameter of thermally conductive insulating layer 25 is preferably: thickness is 0.01 ~ 0.035mm, and thermal conductivity is greater than 30W/mk, is withstand voltagely greater than AC500V.
The parameter of thermally conductive insulating layer 25 meets above-mentioned requirements, and thermally conductive insulating layer 25 can be made on heat conductivility and insulating properties to reach optimum balance, thus on the basis meeting insulating properties, reach best heat-conducting effect.
The concrete comparative analysis of above-mentioned thermoelectric cooling integrated system and traditional thermoelectric cooling integrated system is as follows:
Composition graphs 1 to 3, in existing thermoelectric cooling integrated system, the temperature T of first electrode 14 in TEC hot junction
hjto the temperature T of heat-radiating substrate 16
hentire thermal resistance R
tform primarily of 5 part thermal resistances, R
t=R
t1+ R
t2+ R
t3+ R
t4+ R
t5, wherein, R
t1the thermal-conduction resistance of the-the first electrode 14; R
t2the thermal contact resistance of the-the first electrode 14 and hot junction substrate 11; R
t3the thermal resistance of-hot junction substrate 11; R
t4the thermal contact resistance of-hot junction substrate 11 and radiator 167; R
t5the thermal-conduction resistance of-heat-radiating substrate 16.
In the thermoelectric cooling integrated system of the application, the temperature T of the first electrode 26
hjto the temperature T of heat-radiating substrate 23
hentire thermal resistance R '
tstill be made up of five part thermal resistances, R '
t=R
t1+ R '
t2+ R '
t3+ R '
t4+ R
t5, wherein, R
t1the thermal-conduction resistance of the-the first electrode 26; R '
t2the thermal contact resistance of the-the first electrode 26 and thermally conductive insulating layer 25; R '
t3the thermal-conduction resistance of-thermally conductive insulating layer 25; R '
t4the thermal contact resistance of-thermally conductive insulating layer 25 and heat-radiating substrate 23; R
t5the thermal-conduction resistance of-heat-radiating substrate 23.
By the entire thermal resistance R ' of the thermoelectric cooling integrated system of the application
t=R
t1+ R '
t2+ R '
t3+ R '
t4+ R
t5with the entire thermal resistance R of traditional thermoelectric cooling integrated system
t=R
t1+ R
t2+ R
t3+ R
t4+ R
t5contrast known, entire thermal resistance R
twith entire thermal resistance R '
tdifference mainly concentrate on " R '
t2+ R '
t3+ R '
t4" and " R
t2+ R
t3+ R
t4".Suppose that first electrode 26 gross area is A; Hot junction substrate 11, thermally conductive insulating layer 25 thickness are respectively L
1and L
2, the thermal conductivity of hot junction substrate 11, thermally conductive insulating layer 25 is respectively k
1and k
2, then the thermal resistance R of hot junction substrate 11
t3, thermally conductive insulating layer 25 thermal resistance R '
t3be respectively: R
t3=L
1/ (k
1and R ' A)
t3=L
2/ (k
2a).Because thermally conductive insulating layer 25 adopts chemistry and physical method at heat-radiating substrate 23 (metal material, as aluminium, copper) surface applies or chemical treatment obtains the very thin metal heat-conducting of one deck and insulating materials, and, thermally conductive insulating layer 25 is realized by means such as chemistry and joint between the first electrode 26, therefore two thermal contact resistance value R '
t2and R '
t4relatively little; For the scheme that hot junction substrate in existing temperature-difference refrigerating integrated system 11 and heat-radiating substrate 16 adopt face-face machinery to fit, then R '
t4< < R
t4; As the Al that hot junction substrate 11 uses in traditional thermoelectric cooling integrated system
2o
3the material basic parameter of pottery is example, L
1=0.5 ~ 1.0mm, k
1=17 ~ 25W/mk, the corresponding parameter of thermally conductive insulating layer 25 is L
2=0.01 ~ 0.03mm, k
2=25 ~ 30W/mk, can learn R ' accordingly
t3compare R
t3little 1 to 2 orders of magnitude, and, at " R
t2+ R
t3+ R
t4" in, R
t3occupy an leading position.Therefore, R '
t< < R.
As the above analysis, because the thermal-conduction resistance of thermally conductive insulating layer 25 is much smaller than the thermal-conduction resistance of hot junction substrate 11, and thermally conductive insulating layer 25 is less than the thermal contact resistance of hot junction substrate 11 and heat-radiating substrate 16 with the thermal contact resistance of heat-radiating substrate 23, the thermoelectric cooling integrated system of the application for the first electrode 26 heat to the entire thermal resistance of heat-radiating substrate 23 far below existing thermoelectric cooling integrated system, the P-N galvanic couple being convenient to be energized conducts to rapidly on heat-radiating substrate 23 to the heat that 22 produce on the first electrode 26, thus significantly improve the radiating effect of thermoelectric cooling integrated system, cold junction refrigeratory capacity, coefficient of refrigerating performance is all improved.
In actual applications, following additional design can be done to the thermoelectric cooling integrated system of the application.
The connection of cold junction substrate 21 and the second electrode 27 connects for bonding, and wherein, heat-conducting glue can be adopted to carry out bonding be connected between cold junction substrate 21 with the second electrode 27.In this programme, the syndeton bonding and be connected is adopted between cold junction substrate 21 with the second electrode 27, can in process of production first by P-N galvanic couple to 22 and first after electrode 26, second electrode 27 is welded to connect, bonding cold junction substrate 21 and the second electrode 27 is carried out again after cooling, the connection between the temperatures involved cold junction substrate 21 that welds and the second electrode 27 can be avoided, thus guarantee product not expanded by heating and the deformation that causes and the good output guaranteeing cold.In addition, cold junction substrate 21 glues genus and flexibly connects, and connects more rigidly connected direct welding and more easily absorbs the inner thermal stress produced when semiconductor refrigeration chip 10 works, contribute to the functional reliability and the stability that improve semiconductor refrigeration chip.
As shown in Figure 6 and Figure 7, in the thermoelectric cooling integrated system that this accompanying drawing shows, the opposite side of heat-radiating substrate 23 is connected with several radiating fins 24 by weld layer 28.Heat-radiating substrate 23 is connected with radiating fin 24 by the mode of welding by the program, can be beneficial to the intensive setting of radiating fin 24, thus can realize installing enough radiating fins 24 according to the requirement of radiating effect.
As shown in Figure 8, in the thermoelectric cooling integrated system that this accompanying drawing shows, the opposite side of heat-radiating substrate 23 is provided with thermally conductive insulating layer 29, metal level 30 and weld layer 28 in order, and weld layer 28 is connected with several radiating fins 24.Metal level 30 is consistent with the material of the first electrode 26.
Each technical characteristic of the above embodiment can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics does not exist contradiction, be all considered to be the scope that this description is recorded.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. a thermoelectric cooling integrated system, is characterized in that, comprise cold junction substrate, P-N galvanic couple to and radiator; Described radiator is provided with heat-radiating substrate and radiating fin, and the side of described heat-radiating substrate is connected with described radiating fin, and the opposite side of described heat-radiating substrate is coated with thermally conductive insulating layer; The right one end of described P-N galvanic couple is engaged with described thermally conductive insulating layer by the first electrode, and the right other end of described P-N galvanic couple passes through the second electrode and engages with described cold junction substrate; The area of described heat-radiating substrate is greater than the area of described cold junction substrate.
2. thermoelectric cooling integrated system according to claim 1, is characterized in that, the thickness H of described heat-radiating substrate meets formula (I):
Wherein, Q
hfor heat radiation power, L is the length that heat conducts along conduction orientation, and k is the thermal conductivity of heat-radiating substrate, and D is the cross-sectional width of heat-radiating substrate, Δ T
1for thermal source is poor to the thermograde on heat-radiating substrate border.
3. thermoelectric cooling integrated system according to claim 2, is characterized in that, described heat-radiating substrate is aluminium base, and the thermal conductivity of described heat-radiating substrate is 150 ~ 250W/mk.
4. thermoelectric cooling integrated system according to claim 1, is characterized in that, the gross area S of described radiating fin meets formula (II):
Wherein, Q
hfor heat radiation power, Δ T
2for the mean temperature of radiating fin and the difference of environment temperature, h is the average surface coefficient of heat transfer of radiating fin and environment.
5. thermoelectric cooling integrated system according to claim 1, is characterized in that, the parameter of described thermally conductive insulating layer is: thickness is 0.01 ~ 0.035mm, and thermal conductivity is greater than 30W/mk, is withstand voltagely greater than AC500V.
6. thermoelectric cooling integrated system according to claim 1, is characterized in that, described heat-radiating substrate is connected with described radiating fin by weld layer.
7. thermoelectric cooling integrated system according to claim 1, is characterized in that, described cold junction substrate is connected for bonding with described second electrode.
8. thermoelectric cooling integrated system according to claim 1, is characterized in that, described cold junction substrate is aluminium oxide ceramic substrate or aluminum nitride ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510591058.2A CN105091400A (en) | 2015-09-16 | 2015-09-16 | Thermoelectric cooling integrated system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510591058.2A CN105091400A (en) | 2015-09-16 | 2015-09-16 | Thermoelectric cooling integrated system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105091400A true CN105091400A (en) | 2015-11-25 |
Family
ID=54572379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510591058.2A Pending CN105091400A (en) | 2015-09-16 | 2015-09-16 | Thermoelectric cooling integrated system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105091400A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106152598A (en) * | 2016-08-22 | 2016-11-23 | 广东富信科技股份有限公司 | Semiconductor refrigeration system |
| CN106793685A (en) * | 2016-12-09 | 2017-05-31 | 淳铭散热科技股份有限公司 | A kind of composite heat dissipation device |
| CN109162317A (en) * | 2018-09-21 | 2019-01-08 | 杭州清稞节能环保科技有限公司 | A kind of nano micromolecule water generating device |
| CN109271673A (en) * | 2018-08-22 | 2019-01-25 | 江苏大学 | A kind of calculation method of thermoelectric generation film equivalent thermal conductivity |
| CN109372059A (en) * | 2018-09-21 | 2019-02-22 | 杭州清稞节能环保科技有限公司 | A kind of nano micromolecule water generating device |
| CN110069084A (en) * | 2018-01-24 | 2019-07-30 | 思纳福(北京)医疗科技有限公司 | Temperature control device |
| CN113280527A (en) * | 2021-07-01 | 2021-08-20 | 哈尔滨商业大学 | Heat exchange device special for semiconductor refrigeration equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08128757A (en) * | 1994-10-28 | 1996-05-21 | Aisin Seiki Co Ltd | Water cooler using thermoelectric converter |
| CN201199528Y (en) * | 2008-04-03 | 2009-02-25 | 无锡职业技术学院 | Novel semiconductor refrigeration heat-production apparatus |
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN102446878A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor refrigerating device |
| CN102446877A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor cooling device |
| CN203478683U (en) * | 2013-07-05 | 2014-03-12 | 赖耀华 | Semiconductor cooler |
| CN205002439U (en) * | 2015-09-16 | 2016-01-27 | 广东富信科技股份有限公司 | Difference in temperature electric refrigeration integrated system |
-
2015
- 2015-09-16 CN CN201510591058.2A patent/CN105091400A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08128757A (en) * | 1994-10-28 | 1996-05-21 | Aisin Seiki Co Ltd | Water cooler using thermoelectric converter |
| CN201199528Y (en) * | 2008-04-03 | 2009-02-25 | 无锡职业技术学院 | Novel semiconductor refrigeration heat-production apparatus |
| CN102446878A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor refrigerating device |
| CN102446877A (en) * | 2010-10-11 | 2012-05-09 | 海洋王照明科技股份有限公司 | Semiconductor cooling device |
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN203478683U (en) * | 2013-07-05 | 2014-03-12 | 赖耀华 | Semiconductor cooler |
| CN205002439U (en) * | 2015-09-16 | 2016-01-27 | 广东富信科技股份有限公司 | Difference in temperature electric refrigeration integrated system |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106152598A (en) * | 2016-08-22 | 2016-11-23 | 广东富信科技股份有限公司 | Semiconductor refrigeration system |
| CN106793685A (en) * | 2016-12-09 | 2017-05-31 | 淳铭散热科技股份有限公司 | A kind of composite heat dissipation device |
| CN110069084A (en) * | 2018-01-24 | 2019-07-30 | 思纳福(北京)医疗科技有限公司 | Temperature control device |
| CN109271673A (en) * | 2018-08-22 | 2019-01-25 | 江苏大学 | A kind of calculation method of thermoelectric generation film equivalent thermal conductivity |
| CN109162317A (en) * | 2018-09-21 | 2019-01-08 | 杭州清稞节能环保科技有限公司 | A kind of nano micromolecule water generating device |
| CN109372059A (en) * | 2018-09-21 | 2019-02-22 | 杭州清稞节能环保科技有限公司 | A kind of nano micromolecule water generating device |
| CN113280527A (en) * | 2021-07-01 | 2021-08-20 | 哈尔滨商业大学 | Heat exchange device special for semiconductor refrigeration equipment |
| CN113280527B (en) * | 2021-07-01 | 2022-07-15 | 哈尔滨商业大学 | Heat exchange device special for semiconductor refrigeration equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105091400A (en) | Thermoelectric cooling integrated system | |
| CN1873973B (en) | Envelope for luminous elements of semiconductor in large power | |
| CN103199316A (en) | Battery pack and heat radiation structure thereof | |
| CN103825067A (en) | Efficient heat radiation device for lithium ion power battery | |
| CN103206805A (en) | Semiconductor refrigerating device | |
| CN101292125A (en) | Heat-exchange facility for thermoelectric application | |
| CN205002439U (en) | Difference in temperature electric refrigeration integrated system | |
| CN201199528Y (en) | Novel semiconductor refrigeration heat-production apparatus | |
| CN102446878A (en) | Semiconductor refrigerating device | |
| CN205717104U (en) | A kind of high-power LED heat radiating device and LED | |
| CN106935931A (en) | The rigid flat tube of hot pressing conversion and thermal management device of battery | |
| CN106524631A (en) | Combined semiconductor refrigeration refrigerator | |
| CN203893485U (en) | Heat pipe type efficient semiconductor refrigeration device | |
| CN206819982U (en) | Semiconductor refrigeration sheet | |
| CN102401506A (en) | Heat pipe and TEC (Thermoelectric Cooler) combined heat dissipation device | |
| JPH1054624A (en) | Thermoelectric cooling device | |
| CN202393077U (en) | Car refrigerator semiconductor refrigeration chip radiating component | |
| CN202393078U (en) | Novel heat radiation assembly of semiconductor refrigeration chip of vehicle-mounted refrigerator | |
| CN204792913U (en) | Thermoelectric subassembly of galvanic couple arm and difference in temperature | |
| CN102401507A (en) | Novel radiating component for semiconductor refrigeration chip of vehicle-mounted refrigerator | |
| CN104465978A (en) | Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof | |
| CN104075483A (en) | Semiconductor cooler with hot end and cold end at long distance with each other | |
| CN203192862U (en) | Bidirectional semiconductor cold-hot chip | |
| WO2012062205A1 (en) | Omnidirectional cold-heat-complementary integrated heat exchanger | |
| CN103178201B (en) | Cold and hot bidirectional chip of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151125 |