CN105068278B - Space electrooptic modulator based on graphene - Google Patents
Space electrooptic modulator based on graphene Download PDFInfo
- Publication number
- CN105068278B CN105068278B CN201510591902.1A CN201510591902A CN105068278B CN 105068278 B CN105068278 B CN 105068278B CN 201510591902 A CN201510591902 A CN 201510591902A CN 105068278 B CN105068278 B CN 105068278B
- Authority
- CN
- China
- Prior art keywords
- graphene
- layer
- hexagonal boron
- silver layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
Abstract
Space electrooptic modulator based on graphene, is related to electrooptic modulator.For 5 layers of structure, it is successively arranged silver layer, upper hexagonal boron, graphene monoatomic layer, lower hexagonal boron and lower silver layer from top to bottom；Upper silver layer is equipped at least 1 gap.Upper silver layer, upper hexagonal boron, graphene monoatomic layer, lower hexagonal boron and lower silver layer length can be 200~300nm, width can be 140~170nm；Upper silver layer with a thickness of 10~30nm；The width in gap can be 5~20nm, upper hexagonal boron with a thickness of 1nm, graphene monoatomic layer with a thickness of 0.3~0.8nm, the thickness of lower hexagonal boron can be 15~50nm, lower silver layer with a thickness of 100~2000nm；Overall thickness is 126.3~281.8nm.Size is small, operation voltage is low, modulating speed is fast, working band is wide.
Description
Technical field
The present invention relates to electrooptic modulators, more particularly, to a kind of space electrooptic modulator based on graphene.
Background technique
In recent years, integrated high speed, small size, wideband optical modulator are always the heat of academia or even industry research
Point, especially using semiconductor as traditional electrooptic modulator of material.However, the modulator based on silicon is due to its weaker electricity
Light interaction characteristic, therefore have the large scale of millimeter magnitude；And the modulator based on germanium or composite semiconductor is then faced with
There is a problem of compatibility with existing silicon photoelectric platform.The optical resonator that high-quality-factor is added in silicon modulator can increase
Strong modulate intensity, but the characteristics of these devices are due to resonant cavity itself, there is relatively narrow modulation bandwidth and more demanding production
Technique and harsh environment temperature.Therefore, one kind high speed compatible with CMOS complementary metal-oxide-semiconductor (CMOS), height are found
The material of intensity at academia interest where, while be also industry the task of top priority.
Graphene be a kind of single layer of carbon atom of plane closely combine two-dimentional honeycomb lattice structure (bibliography:
A.N. Grigorenko,M.Polini and K.S.Novoselov,"Graphene plasmonics",nature
Photonics, 6,262,2012), there is the covalent hydridization polar structure of complete sp2, be the base of other dimension class graphite materials
This building element.It rolls carbon nanotube uncommon as the fowler of zero dimension, one-dimensional or is stacked to three-dimensional graphite.Graphene
Carrier shows as the relativistic particles or Di Lake-fermion of massless, and mobile scattering is smaller at room temperature, this peculiar
Behavior lead to many different phenomenons in graphene.Be first graphene be it is a kind of have between conduction band and valence band a little hand over
Zero folded band gap 2D semiconductor；Followed by the strong ambipolar electric field effect of its display, carrier concentration are up to 1013cm-2, room temperature
Under Mobility measurement value reach~10000cm-2s-1；Third, Germicidal efficacy show by field effect adjust Fermi level,
Graphene electrons and holes carrier have half-integer quantum hall effect (half-integer quantum Halleffect,
QHE).In addition, graphene also has high thermal conductivity and visible light transmittance, graphene shows as partly leading under certain condition
Body belongs to direct band gap, can be used to manufacture triode etc..
Change the current potential of graphene by applying bias voltage and influences its carrier concentration, thus change its refractive index,
The small size waveguide type structure electrooptic modulator in broadband, high speed may be implemented.But the shortcomings that waveguide type structure, is: in order to
Realize biggish modulation depth, waveguide must long enough to enhance the reciprocation of graphene and light field, this can allow waveguide etc.
Effect capacitor becomes larger, so that modulating speed be made to be restricted, while can also generate relatively high electromagnetic consumable.And free space knot
The graphene optical modulator of structure not only combines the advantages such as the high speed of grapheme material itself, small size, while being also equipped with wave
The features such as conductivity type electrooptic modulator stabilization, easy preparation.This makes graphene spatial light modulator have first entering light electrical part
Potentiality (the bibliography: Y.Yao et al., " Electrically Tunable Metasurface Perfect of middle application
Absorbers for Ultrathin Mid-Infrared Optical Modulators",Nano Letters.,2014,
14,6526-6532)。
Summary of the invention
Technical problem to be solved by the invention is to provide the ultra-thin micro-nano structures based on graphene, for close in space
Infrared incidence wave can regulate and control its reflectance spectrum by way of biasing, and independent of incident angle, Jin Ershi
A kind of space electrooptic modulator based on graphene of existing space Electro-optical Modulation function.
The present invention is 5 layers of structure, and it is former to be successively arranged silver layer, upper hexagonal boron nitride (hBN) layer, graphene list from top to bottom
Sublayer, lower hexagonal boron nitride (hBN) layer and lower silver layer；The upper silver layer is equipped at least 1 gap.
The upper silver layer, upper hexagonal boron nitride (hBN) layer, graphene monoatomic layer, lower hexagonal boron nitride (hBN) layer are under
The length of silver layer can be 200~300nm, the upper silver layer, upper hexagonal boron nitride (hBN) layer, graphene monoatomic layer, lower six
The width of square boron nitride (hBN) layer and lower silver layer can be 140~170nm；The thickness of upper silver layer can be 10~30nm；It is described
The width in gap can be 5~20nm, and the thickness of upper hexagonal boron nitride (hBN) layer can be 1nm, the thickness of graphene monoatomic layer
Degree can be 0.3~0.8nm, and the thickness of lower hexagonal boron nitride (hBN) layer can be 15~50nm, the thickness of lower silver layer can for 100~
2000nm；Overall thickness of the invention can be 126.3~281.8nm.
The present invention uses metal-dielectric-graphene-dielectric-metal structure in vertical direction；Horizontal direction
On, top layer's metal uses palisade stick, and metal stick forms micro slit between each other.And graphene and underlying metal it
Between plus bias voltage, for changing the refractive index of graphene, thus the space reflection rate of the dynamic regulation structure.
Why select graphene as controlled material, is because it has a characteristic that
1, strong interactivity.Compared with those show the composite semiconductor of quantum confined stark effect, single-layer graphene
There is stronger band-to-band transition, therefore has stronger reciprocation with light.
2, broadband character.Since Di Lake-fermion high frequency dynamic electric conductance is constant, communications band, in it is infrared,
Far infrared, graphene is to the absorptivity of light independent of wavelength.
3, high speed characteristics.Since graphene at room temperature has the carrier mobility of superelevation, according to inverse band filling process,
Fermi level can be changed quickly, to realize the characteristic of High Speed Modulation.
4, it is compatible with CMOS complementary metal-oxide-semiconductor (CMOS).Graphene is allowed in the compatibility of wafer level and CMOS
It can be widely applied in high-frequency electronic member device.
Be based on feature as above, graphene electro-optical modulator have size is small, operation voltage is low, modulating speed is fast,
The advantages such as working band is wide.
Compared with prior art, beneficial effects of the present invention are as follows:
1. comparing with traditional electrooptic modulator, the present invention has the characteristics that modulating speed is fast, size is small, low in energy consumption, and
It is compatible with the electronic component based on silicon, so that it is easier to integrate in a communications system.
2. being compared with waveguide type graphene electro-optical modulator, since the present invention is not the change by the absorptivity to graphene
Change to change overall reflectivity, so not needing the area of increase graphene to enhance the interaction between graphene and light wave.This
Allowing for the present invention can be made smaller than waveguide type graphene electro-optical modulator, therefore power consumption is also lower, while equivalent capacity
Also smaller, corresponding modulating speed is also higher.
3. structure of the invention has, incident light angle is not dependent, this has in the practical application of space electrooptic modulator
It is significant.
Detailed description of the invention
Fig. 1 is structure composition schematic diagram of the invention.
Fig. 2 is the modulation reflectance curve of the Realization of Simulation of the present invention.
Fig. 3 is the multi-angle incidence figure that the present invention emulates.In Fig. 3, a is chemical potential: 0.3eV, b are chemical potential:
1.0eV。
Specific embodiment
Following embodiment will the present invention is further illustrated in conjunction with attached drawing.
Following embodiment selects the silicon wafer of single-sided polishing for substrate, the method vapor deposition of deposited by electron beam evaporation on substrate
150nm silver, with the hBN of the method for rf magnetron sputtering deposition 16nm on Ag, the method for then using chemical deposition allows graphene
It grows on hBN, then with the method for plasma chemical deposition, the hBN of 1nm is formed on graphene.It is pressed finally by nanometer
The method of print obtains the silver bar block of top layer.
The present invention is using metal layer-dielectric layer-metal layer (Metal-Dielectric-Metal) structure, group
Prejudice Fig. 1.
The present invention is 5 layers of structure, is successively arranged silver layer 1, upper hexagonal boron nitride (hBN) layer 2, graphene list from top to bottom
Atomic layer 3, lower hexagonal boron nitride (hBN) layer 4 and lower silver layer 5；The upper silver layer 1 is equipped at least 1 gap.
The upper silver layer 1, upper hexagonal boron nitride (hBN) layer 2, graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer
4 and the length of lower silver layer 5 can be 200~300nm, the upper silver layer 1, upper hexagonal boron nitride (hBN) layer 2, graphene list are former
The width of sublayer 3, lower hexagonal boron nitride (hBN) layer 4 and lower silver layer 5 can be 140~170nm；The thickness of upper silver layer 1 can be 10
~30nm；The width in the gap 11 can be 5~20nm, and the thickness of upper hexagonal boron nitride (hBN) layer 2 can be 1nm, stone
The thickness of black alkene monoatomic layer 3 can be 0.3~0.8nm, and the thickness of lower hexagonal boron nitride (hBN) layer 4 can be 15~50nm, under
The thickness of silver layer 5 can be 100~2000nm；Overall thickness of the invention can be 126.3~281.8nm.
Graphene monoatomic layer 3 is set between upper hexagonal boron nitride (hBN) layer 2 and lower hexagonal boron nitride (hBN) layer 4, is
Graphene is directly contacted with metal in order to prevent, and carrier is avoided directly to transmit between graphene and metal.Upper silver layer 1 is under
Metal part (Metal) in the composition Metal-Dielectric-Metal structure of silver layer 5, upper hexagonal boron nitride (hBN) layer 2,
Graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer 4 constitute dielectric layer (Dielectric).The length of total is
200~300nm, width are 140~170nm, are highly 126.3~281.8nm.Therefore size of the invention is very small, than existing
Small several orders of magnitude of some electrooptic modulators.
When total length be 250nm, width 160nm, be highly 126.3~281.8nm；The thickness of upper silver layer
For 10nm, the width in gap is 5nm；Upper hexagonal boron nitride (hBN) layer with a thickness of 1nm, graphene monoatomic layer with a thickness of
0.5nm, lower hexagonal boron nitride (hBN) layer with a thickness of 16nm, lower silver layer with a thickness of 150nm when, can be with by simulation calculation
Obtain the reflectance curve of different Fermi levels as shown in Figure 2.From fig. 2 it can be seen that when Fermi level increases from 0.1 eV
When being added to 0.3eV, resonance wavelength is from 2060nm red shift to 2110nm；On the contrary, when Fermi level increases to 1.0eV from 0.3eV
When, resonance wavelength is from 2110nm blue shift to 1950nm.This is because when Fermi level is greater than 0.3eV, graphene dielectric constant
Real part begin to change into negative, show metallicity, therefore surface phasmon can be caused.On this wavelength of 1950nm,
The modulation depth of modulator can achieve 87.5%.Insertion loss is then negative 3.19dB.Modulation bandwidth can achieve 200 nm, adjust
It can achieve 500GHz on rate theory processed.And from figure 3, it can be seen that the modulator does not depend on the angle of incident light, i.e. light
For wave regardless of incident from what angle, the trough of obtained reflectance curve is almost the same, which ensure that modulator work is steady
It is qualitative.
Spatial modulator working principle based on graphene: narrow gap is formed between the silver bar block of surface, causes surface
Phasmon (Surface Plasmon), can be incident light " limitation " in gap, so that the field strength in gap locally increases
By force；And change graphene both end voltage and the Fermi level of graphene is caused to change, so that the photoelectric characteristic of graphene be made to send out
Changing, the caused surface phasmon of graphene itself is also with variation, thus the effective dielectric constant of total
It can have a greater change.The reason of just because of the above these two aspects, the modulator just have so excellent modulation parameter.
Claims (1)
1. the space electrooptic modulator based on graphene, it is characterised in that be 5 layers of structure, be successively arranged from top to bottom silver layer,
Upper hexagonal boron, graphene monoatomic layer, lower hexagonal boron and lower silver layer；The upper silver layer is equipped at least 1
Gap；
The upper silver layer, upper hexagonal boron, graphene monoatomic layer, lower hexagonal boron and lower silver layer length be
200~300nm, the upper silver layer, upper hexagonal boron, graphene monoatomic layer, lower hexagonal boron and lower silver layer
Width is 140~170nm；Upper silver layer with a thickness of 10~30nm；The width in the gap is 5~20nm, upper six side
Boron nitride layer with a thickness of 1nm, graphene monoatomic layer with a thickness of 0.3~0.8nm, lower hexagonal boron with a thickness of 15
~50nm, lower silver layer with a thickness of 100~2000nm；The overall thickness of space electrooptic modulator based on graphene be 126.3~
281.8nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510591902.1A CN105068278B (en) | 2015-09-17 | 2015-09-17 | Space electrooptic modulator based on graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510591902.1A CN105068278B (en) | 2015-09-17 | 2015-09-17 | Space electrooptic modulator based on graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105068278A CN105068278A (en) | 2015-11-18 |
| CN105068278B true CN105068278B (en) | 2018-12-28 |
Family
ID=54497683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510591902.1A Active CN105068278B (en) | 2015-09-17 | 2015-09-17 | Space electrooptic modulator based on graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105068278B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106950726A (en) * | 2016-11-08 | 2017-07-14 | 北京交通大学 | Silicon substrate light space ultrafast modulation device based on graphene |
| CN108181736A (en) * | 2018-01-08 | 2018-06-19 | 苏州大学 | Electrooptic modulator based on graphene/metal composite structure |
| CN108563040A (en) * | 2018-01-08 | 2018-09-21 | 苏州大学 | Photoswitch based on graphene/metal hybrid construction |
| CN110702206B (en) * | 2019-09-29 | 2021-06-08 | 西南大学 | Infrared detector and system based on graphene Johnson noise measurement |
| CN111443504B (en) * | 2020-03-13 | 2022-02-18 | 西安电子科技大学 | Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204925542U (en) * | 2015-09-17 | 2015-12-30 | 厦门大学 | Space electric optic modem based on graphite alkene |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495480A (en) * | 2011-12-07 | 2012-06-13 | 电子科技大学 | Electro-optic modulator with graphene and micronano optical fiber composite structure |
| CN103439808B (en) * | 2013-09-22 | 2016-03-09 | 电子科技大学 | A kind of novel graphene electrooptical modulator structure |
| CN103633024B (en) * | 2013-11-11 | 2016-03-23 | 西安电子科技大学 | A kind of extensive h-BN medium Graphene integrated circuit preparation |
| CN103969850A (en) * | 2014-05-08 | 2014-08-06 | 电子科技大学 | Structural design for novel electrooptical modulator based on graphene |
| CN104726845B (en) * | 2015-03-05 | 2018-05-01 | 中国科学院上海微***与信息技术研究所 | The preparation method of the upper graphene nanobelts of h-BN |
-
2015
- 2015-09-17 CN CN201510591902.1A patent/CN105068278B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204925542U (en) * | 2015-09-17 | 2015-12-30 | 厦门大学 | Space electric optic modem based on graphite alkene |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105068278A (en) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105068278B (en) | Space electrooptic modulator based on graphene | |
| Luo et al. | Graphene-based optical modulators | |
| Sachet et al. | Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics | |
| Degl’Innocenti et al. | Low-bias terahertz amplitude modulator based on split-ring resonators and graphene | |
| Chu et al. | Active plasmonic switching at mid-infrared wavelengths with graphene ribbon arrays | |
| Chen et al. | A broadband optical modulator based on a graphene hybrid plasmonic waveguide | |
| Sinatkas et al. | Transparent conducting oxide electro-optic modulators on silicon platforms: A comprehensive study based on the drift-diffusion semiconductor model | |
| Du et al. | The study of few-layer graphene based Mach− Zehnder modulator | |
| Li et al. | Graphene–metamaterial hybridization for enhanced terahertz response | |
| WO2016141125A1 (en) | Tunable light modulation using graphene | |
| Guo Du et al. | A two-dimensional nanopatterned thin metallic transparent conductor with high transparency from the ultraviolet to the infrared | |
| CN107908020B (en) | Graphene-based mid-infrared plasmon waveguide modulator | |
| Gosciniak et al. | Enhanced performance of graphene-based electro-absorption waveguide modulators by engineered optical modes | |
| Cai et al. | Graphene-based plasmonic tunable dual-band bandstop filter in the far-infrared region | |
| Herrmann et al. | Modulators for mid-infrared and terahertz light | |
| Vahed et al. | Hybrid plasmonic optical modulator based on multi-layer graphene | |
| Samuels et al. | Engineering graphene conductivity for flexible and high-frequency applications | |
| Hao et al. | Highly efficient graphene-based optical modulator with edge plasmonic effect | |
| Song et al. | Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes | |
| Lian et al. | Electro-absorption optical modulator based on graphene-buried polymer waveguides | |
| Karimkhani et al. | An optical modulator with ridge-type silicon waveguide based on graphene and MoS2 layers and improved modulation depth | |
| Singh et al. | Effect of phonon-plasmon and surface plasmon polaritons on photoluminescence in quantum emitter and graphene deposited on polar crystals | |
| Sunku et al. | Dual-gated graphene devices for near-field nano-imaging | |
| Wang et al. | Broadband and ultrafast all-optical switching based on transition metal carbide | |
| Chen et al. | Polarization-insensitive electro-absorption modulator based on graphene-silicon nitride hybrid waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |