CN204925542U - Space electric optic modem based on graphite alkene - Google Patents
Space electric optic modem based on graphite alkene Download PDFInfo
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- CN204925542U CN204925542U CN201520719757.6U CN201520719757U CN204925542U CN 204925542 U CN204925542 U CN 204925542U CN 201520719757 U CN201520719757 U CN 201520719757U CN 204925542 U CN204925542 U CN 204925542U
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Abstract
The utility model provides a space electric optic modem based on graphite alkene, relates to electric optic modem. For 5 layer structures, on the follow to be equipped with down the silver layer in proper order, go up the hexagonal boron nitride layer, graphite alkene monoatomic layer, hexagonal boron nitride layer and lower silver layer down, upward be equipped with 1 at least gap on the silver layer. Go up the silver layer, go up the hexagonal boron nitride layer, graphite alkene monoatomic layer, hexagonal boron nitride layer and the length of silver layer all can be for 200-300nm down, the width all can be for 140-170nm, the thickness of going up the silver layer is 10-30nm, the width in gap can be for 5-20nm, and the thickness of going up the hexagonal boron nitride layer is 1nm, and the thickness of graphite alkene monoatomic layer is 0.3-0.8nm, and the thickness on lower hexagonal boron nitride layer can be for 15-50nm, and the thickness of lower silver layer is 100-2000nm, the gross thickness is 126.3-281.8nm. The size is little, the operating voltage is low, the modulation is fast, working frequency band is wide.
Description
Technical field
The utility model relates to electrooptic modulator, especially relates to a kind of space electrooptic modulator based on Graphene.
Background technology
In recent years, integrated high speed, small size, wide band light modulator are the focuses of academia and even industry member research always, are especially the traditional electrical photomodulator of material with semiconductor.But the modulator based on silicon, due to its more weak electric light interaction characteristic, therefore has the large scale of millimeter magnitude; Modulator based on germanium or composite semiconductor is then faced with exists compatible problem with existing silicon photoelectric platform.The optical resonator adding high-quality-factor in silicon modulator can enhanced modulation intensity, but these devices are due to resonator cavity itself, has narrower modulation band-width and require higher manufacture craft and harsh environment temperature.Therefore, find the interest place of the material Cheng Liao academia of a kind of high speed compatible with complementary metal oxide semiconductor (CMOS) (CMOS), high strength, be also the task of top priority of industry member simultaneously.
Graphene is the two-dimentional honeycomb crystalline network (list of references: A.N.Grigorenko that a kind of monolayer carbon atom of plane closely combines, M.PoliniandK.S.Novoselov, " Grapheneplasmonics ", naturephotonics, 6,262,2012), having sp2 covalency hydridization polar structure completely, is the basic building element of other dimension class graphite materials.It rolls the Fu Lexi becoming zero dimension, the carbon nano-tube of one dimension or be stacked to three-dimensional graphite.The charge carrier of Graphene show as without quality relativistic particles or claim Di Lake-fermion, it is less at room temperature to move scattering, and this distinctive behavior causes many different phenomenons in Graphene.First to be Graphene be a kind ofly has zero a bit overlapping band gap 2D semiconductor between conduction band and valence band; Next is the strong ambipolar electric field effect of its display, and carrier concentration is up to 10
13cm
-2, the Mobility measurement value under room temperature reaches ~ 10000cm
-2s
-1; 3rd, Germicidal efficacy shows, regulates Fermi level by field effect, and Graphene electronics and holoe carrier have half-integer quantum Hall effect (half-integerquantumHalleffect, QHE).In addition, Graphene also has high thermal conductivity and visible light transmissivity, and Graphene shows as semiconductor under certain condition, belongs to direct band gap, can be used for manufacturing triode etc.
Change the current potential of Graphene by applying bias voltage and affect its carrier concentration, thus changing its refractive index, the small size waveguide type structure electrooptic modulator of broadband, high speed can be realized.But, the shortcoming of waveguide type structure is: in order to realize larger depth of modulation, and waveguide is sufficiently long with the reciprocation strengthening Graphene and light field, and this can allow the equivalent capacity of waveguide become large, thus modulating speed is restricted, also can produce relatively high electromagnetic consumable simultaneously.And the Graphene photomodulator of free-space structure not only combines the advantage such as high speed, small size of grapheme material itself, also possessed the features such as stable, the easy preparation of waveguide electro-optic modulator simultaneously.This potentiality (list of references: Y.Yaoetal. Graphene spatial light modulator having been possessed apply in advanced photoelectric device, " ElectricallyTunableMetasurfacePerfectAbsorbersforUltrath inMid-InfraredOpticalModulators ", NanoLetters., 2014,14,6526-6532).
Summary of the invention
Technical problem to be solved in the utility model is to provide the ultra-thin micro-nano structure based on Graphene, for the near infrared incident wave in space, can be regulated and controled its reflectance spectrum by biased mode, and do not rely on incident angle, and then a kind of space electrooptic modulator based on Graphene of implementation space electrooptical modulation function.
The utility model is 5 Rotating fields, is provided with silver layer, upper hexagonal boron nitride (hBN) layer, Graphene monoatomic layer, lower hexagonal boron nitride (hBN) layer and lower silver layer from top to bottom successively; Described upper silver layer is provided with at least 1 gap.
The length of described upper silver layer, upper hexagonal boron nitride (hBN) layer, Graphene monoatomic layer, lower hexagonal boron nitride (hBN) layer and lower silver layer all can be 200 ~ 300nm, and the width of described upper silver layer, upper hexagonal boron nitride (hBN) layer, Graphene monoatomic layer, lower hexagonal boron nitride (hBN) layer and lower silver layer all can be 140 ~ 170nm; The thickness of upper silver layer can be 10 ~ 30nm; The width in described gap can be 5 ~ 20nm, the thickness of described upper hexagonal boron nitride (hBN) layer can be 1nm, the thickness of Graphene monoatomic layer can be 0.3 ~ 0.8nm, the thickness of lower hexagonal boron nitride (hBN) layer can be 15 ~ 50nm, and the thickness of lower silver layer can be 100 ~ 2000nm; Gross thickness of the present utility model can be 126.3 ~ 281.8nm.
The utility model adopts the structure of metal-dielectric-Graphene-dielectric-metal in vertical direction; In horizontal direction, the superiors' metal adopts palisade stick, and metal stick forms micro slit each other.And between Graphene and underlying metal, be biased voltage, be used for changing the refractive index of Graphene, thus the space reflection rate of this structure of dynamic regulation.
Why selecting Graphene as controlled material, is because it has following features:
1. strong interactivity.Compared with the composite semiconductor showing quantum confined Stark effect with those, single-layer graphene has stronger interband transition, therefore has stronger reciprocation with light.
2. broadband character.Because the high frequency dynamic electric conductance of Di Lake-fermion is constant, communications band, in infrared, far infrared, the absorptivity of Graphene to light does not rely on wavelength.
3. high speed characteristics.Because Graphene under room temperature has the carrier mobility of superelevation, according to inverse band filling process, its Fermi level can be changed quickly, thus realizes the characteristic of High Speed Modulation.
4. compatible with complementary metal oxide semiconductor (CMOS) (CMOS).In the compatibility of wafer level and CMOS, Graphene can be widely applied in high-frequency electronic unit device.
Just based on as above feature, graphene electro-optical modulator has possessed the advantages such as size is little, operating voltage is low, modulating speed is fast, working band is wide.
Compared with prior art, the beneficial effects of the utility model are as follows:
1. contrast with traditional electrooptic modulator, the utility model has the features such as modulating speed is fast, size is little, low in energy consumption, and compatible with the electronic devices and components based on silicon, makes it more easily in a communications system integrated.
2. contrast with waveguide type graphene electro-optical modulator, because the utility model is not change overall reflectivity by the change of the absorptivity to Graphene, so do not need the area of increase Graphene mutual with what strengthen between Graphene and light wave.This just makes the utility model can do less than waveguide type graphene electro-optical modulator, and therefore power consumption is also lower, and equivalent capacity is also less simultaneously, and corresponding modulating speed is also higher.
3. structure of the present utility model possesses incident angle of light not dependence, and this is significant in the practical application of space electrooptic modulator.
Accompanying drawing explanation
Fig. 1 is structure of the present utility model composition schematic diagram.
Fig. 2 is the modulation reflectance curve of the utility model the Realization of Simulation.
Fig. 3 is the multi-angle incidence figure of the utility model emulation.In figure 3, a is chemical potential: 0.3eV, b are chemical potential: 1.0eV.
Embodiment
Following examples will be further described the utility model by reference to the accompanying drawings.
Following examples select the silicon chip of single-sided polishing to be substrate, the method evaporation 150nm silver of deposited by electron beam evaporation on substrate, the hBN of 16nm is deposited on Ag by the method for rf magnetron sputtering, then the method for chemogenic deposit is used, allow Graphene length on hBN, use the method for plasma chemical deposition again, the hBN of 1nm is formed on Graphene.Finally by the method for nano impression, obtain the silver bar block of top layer.
What the utility model adopted is metal level-dielectric layer-metal level (Metal-Dielectric-Metal) structure, and its composition is shown in Fig. 1.
The utility model is 5 Rotating fields, is provided with silver layer 1, upper hexagonal boron nitride (hBN) layer 2, Graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer 4 and lower silver layer 5 from top to bottom successively; Described upper silver layer 1 is provided with at least 1 gap 11.
The length of described upper silver layer 1, upper hexagonal boron nitride (hBN) layer 2, Graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer 4 and lower silver layer 5 all can be 200 ~ 300nm, and the width of described upper silver layer 1, upper hexagonal boron nitride (hBN) layer 2, Graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer 4 and lower silver layer 5 all can be 140 ~ 170nm; The thickness of upper silver layer 1 can be 10 ~ 30nm; The width in described gap 11 can be 5 ~ 20nm, the thickness of described upper hexagonal boron nitride (hBN) layer 2 can be 1nm, the thickness of Graphene monoatomic layer 3 can be 0.3 ~ 0.8nm, the thickness of lower hexagonal boron nitride (hBN) layer 4 can be 15 ~ 50nm, and the thickness of lower silver layer 5 can be 100 ~ 2000nm; Gross thickness of the present utility model can be 126.3 ~ 281.8nm.
Graphene monoatomic layer 3 is located between hexagonal boron nitride (hBN) layer 2 and lower hexagonal boron nitride (hBN) layer 4, is to prevent Graphene directly and Metal Contact, avoiding charge carrier directly to transmit between Graphene and metal.Upper silver layer 1 and lower silver layer 5 form the metallic member (Metal) in Metal-Dielectric-Metal structure, and upper hexagonal boron nitride (hBN) layer 2, Graphene monoatomic layer 3, lower hexagonal boron nitride (hBN) layer 4 form dielectric layer (Dielectric).The length of total is 200 ~ 300nm, and width is 140 ~ 170nm, is highly 126.3 ~ 281.8nm.Therefore size of the present utility model is very little, less than existing electrooptic modulator several orders of magnitude.
When the length of total is 250nm, width is 160nm, is highly 126.3 ~ 281.8nm; The thickness of upper silver layer is 10nm, and the width in gap is 5nm; The thickness of upper hexagonal boron nitride (hBN) layer is 1nm, the thickness of Graphene monoatomic layer is 0.5nm, the thickness of lower hexagonal boron nitride (hBN) layer is 16nm, when the thickness of lower silver layer is 150nm, through simulation calculation, the reflectance curve of different Fermi levels as shown in Figure 2 can be obtained.As can see from Figure 2, when Fermi level is increased to 0.3eV from 0.1eV, resonance wavelength is from 2060nm red shift to 2110nm; On the contrary, when Fermi level is increased to 1.0eV from 0.3eV, resonance wavelength is from 2110nm blue shift to 1950nm.This is because when Fermi level is greater than 0.3eV, the real part of Graphene specific inductive capacity starts to become negative, shows metallicity, therefore can cause surface phasmon.On this wavelength of 1950nm, the depth of modulation of modulator can reach 87.5%.Insertion loss is then negative 3.19dB.Modulation band-width can reach 200nm, and modulating speed can reach 500GHz in theory.And as can be seen from Figure 3, the angle of this modulator to incident light does not rely on, namely no matter incident from what angle light wave is, and the trough of the reflectance curve obtained is basically identical, which ensure that the stability of modulator work.
Spatial modulator principle of work based on Graphene: form narrow and small gap between surperficial silver bar block, causes surface phasmon (SurfacePlasmon), incident light " restriction " in gap, can make the field intensity local enhancement in gap; And change Graphene both end voltage and cause the Fermi level of Graphene to change, thus the photoelectric characteristic of Graphene is changed, surface phasmon caused by Graphene itself is also along with change, thus the effective dielectric constant of total also can have a greater change.Just because of the reason of above these two aspects, this modulator just possesses so excellent modulation parameter.
Claims (2)
1. based on a space electrooptic modulator for Graphene, it is characterized in that being 5 Rotating fields, be provided with silver layer, upper hexagonal boron nitride layer, Graphene monoatomic layer, lower hexagonal boron nitride layer and lower silver layer from top to bottom successively; Described upper silver layer is provided with at least 1 gap.
2. a kind of space electrooptic modulator based on Graphene as claimed in claim 1, it is characterized in that the length of described upper silver layer, upper hexagonal boron nitride layer, Graphene monoatomic layer, lower hexagonal boron nitride layer and lower silver layer is 200 ~ 300nm, the width of described upper silver layer, upper hexagonal boron nitride layer, Graphene monoatomic layer, lower hexagonal boron nitride layer and lower silver layer is 140 ~ 170nm; The thickness of upper silver layer is 10 ~ 30nm; The width in described gap is 5 ~ 20nm, and the thickness of described upper hexagonal boron nitride layer is 1nm, and the thickness of Graphene monoatomic layer is 0.3 ~ 0.8nm, and the thickness of lower hexagonal boron nitride layer is 15 ~ 50nm, and the thickness of lower silver layer is 100 ~ 2000nm; Gross thickness based on the space electrooptic modulator of Graphene is 126.3 ~ 281.8nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520719757.6U CN204925542U (en) | 2015-09-17 | 2015-09-17 | Space electric optic modem based on graphite alkene |
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| CN201520719757.6U CN204925542U (en) | 2015-09-17 | 2015-09-17 | Space electric optic modem based on graphite alkene |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105068278A (en) * | 2015-09-17 | 2015-11-18 | 厦门大学 | Space electrooptical modulator based on graphene |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105068278A (en) * | 2015-09-17 | 2015-11-18 | 厦门大学 | Space electrooptical modulator based on graphene |
| CN105068278B (en) * | 2015-09-17 | 2018-12-28 | 厦门大学 | Space electrooptic modulator based on graphene |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151230 Effective date of abandoning: 20181228 |