CN111443504B - Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method - Google Patents
Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method Download PDFInfo
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- CN111443504B CN111443504B CN202010176198.4A CN202010176198A CN111443504B CN 111443504 B CN111443504 B CN 111443504B CN 202010176198 A CN202010176198 A CN 202010176198A CN 111443504 B CN111443504 B CN 111443504B
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0338—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect structurally associated with a photoconductive layer or having photo-refractive properties
Abstract
The invention relates to a middle infrared voltage adjustable filter, a preparation method thereof and a filtering method, wherein the middle infrared voltage adjustable filter comprises a substrate layer; the interlayer structure layer is positioned on the substrate layer and comprises a first graphene layer, a hexagonal boron nitride layer and a second graphene layer from bottom to top in sequence, a first extending portion is arranged at one end of the first graphene layer, a first metal film is plated on the surface of the first extending portion, a second extending portion is arranged at one end of the second graphene layer, and a second metal film is plated on the surface of the second extending portion; and the cladding is positioned on the interlayer structure layer. The intermediate infrared voltage adjustable filter can filter in an intermediate infrared band, filter interference signals such as noise signals in space, allow a part of waves in the intermediate infrared band to pass through, and avoid adverse effects of the interference signals on information transmission.
Description
Technical Field
The invention belongs to the technical field of nano optical devices, and particularly relates to a medium infrared voltage adjustable filter, a preparation method thereof and a filtering method.
Background
With the development of nanophotonics and the improvement of integration of nano-optical devices, the photoelectric digital integrated circuit technology has the difficulties of physical property optimization and process manufacturing, such as high bit error rate, high dynamic power consumption, low modulation bandwidth and high process tolerance difference caused by low modulation depth. To solve the above problems, various novel device structures, materials, and operation mechanisms are continuously proposed for achieving higher performance, lower power consumption, and faster speed.
The filter is used as an important passive device for infrared spectrum detection, has the functions of characteristic frequency selection, noise filtration and the like, has important application value in the fields of microwave communication, radar, microwave measurement and the like, and is widely researched. However, since the atmospheric transmission window and the reflection band with the fingerprint characteristic fundamental frequency of most gas molecules are distributed in the mid-infrared band, the noise signal in the space can be mixed in the useful signal to form a strong interference signal, thereby having an adverse effect on the information transmission in practical application.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a medium-infrared voltage adjustable filter, a preparation method thereof and a filtering method. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a middle infrared voltage adjustable filter, which comprises:
a substrate layer;
the interlayer structure layer is positioned on the substrate layer and comprises a first graphene layer, a hexagonal boron nitride layer and a second graphene layer from bottom to top in sequence, a first extending portion is arranged at one end of the first graphene layer, a first metal film is plated on the surface of the first extending portion, a second extending portion is arranged at one end of the second graphene layer, and a second metal film is plated on the surface of the second extending portion;
and the cladding is positioned on the interlayer structure layer.
In one embodiment of the invention, the substrate layer has a width of 100nm to 300nm and a height of 5nm to 20 nm.
In one embodiment of the invention, the width of the first graphene layer is 100nm-300nm and the height is 0.7 nm.
In one embodiment of the present invention, the hexagonal boron nitride layer has a width of 100nm to 300nm and a height of 10nm to 100 nm.
In one embodiment of the invention, the width of the second graphene layer is 100nm-300nm and the height is 0.7 nm.
In one embodiment of the invention, the cladding layer has a width of 100nm to 300nm and a height of 5nm to 200 nm.
Another embodiment of the present invention provides a method for manufacturing a mid-infrared voltage adjustable filter, including the steps of:
s1, preparing a substrate layer;
s2, transferring and forming a first graphene layer on the substrate layer, wherein one end of the first graphene layer extends relative to the substrate layer to form a first extension portion, and metallizing the surface of the first extension portion to form a first metal film;
s3, preparing a hexagonal boron nitride layer on the first graphene layer;
s4, transferring and forming a second graphene layer on the hexagonal boron nitride layer, wherein one end of the second graphene layer extends relative to the hexagonal boron nitride layer to form a second extending portion, and metallizing the surface of the second extending portion to form a second metal film;
and S5, forming a cladding layer on the surface of the second graphene layer.
Another embodiment of the present invention provides a filtering method for a mid-infrared voltage adjustable filter, which performs filtering by using the mid-infrared voltage adjustable filter according to any one of the embodiments described above, and includes the steps of:
s1, selecting a plurality of first point voltages;
s2, sequentially applying the first point voltages to the sandwich structure layer, and irradiating mid-infrared light waves on the surface of the cladding to obtain electric field distribution in the mid-infrared voltage adjustable filter under the first point voltages;
s3, calculating the device transmissivity corresponding to the first point voltages through an electromagnetic field according to the electric field distribution;
and S4, filtering by using the intermediate infrared voltage adjustable filter according to the transmissivity of the device.
In one embodiment of the invention, the first point voltage ranges from 1V to 6V, and the interval is 0.001V to 0.05V.
In one embodiment of the present invention, step S2 includes:
and connecting a first metal film to a ground terminal, sequentially adding a plurality of first point voltages to a second metal film, and irradiating the mid-infrared light on the surface of a cladding to obtain the electric field distribution in the mid-infrared voltage adjustable filter under each first point voltage.
Compared with the prior art, the invention has the beneficial effects that:
1. the intermediate infrared voltage adjustable filter can filter in an intermediate infrared band, filter noise signals and other interference signals in a space, allow a part of waves in the intermediate infrared band to pass through, and avoid adverse effects of the interference signals on information transmission.
2. In the intermediate infrared voltage adjustable filter, the transmissivity of the device can be obtained by applying voltage to the joint of the second graphene layer and the cladding, and the transmissivity of the device under different incident wave numbers can be adjusted by controlling the magnitude of the applied voltage, so that high-performance dynamic filtering can be finally realized.
3. According to the medium-infrared voltage adjustable filter, the graphene-hexagonal boron nitride-graphene form a heterostructure, the heterostructure can excite an excimer coupling effect, and the transmissivity of a device in a specific waveband is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of a mid-infrared voltage adjustable filter according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of a method for manufacturing a mid-infrared voltage tunable filter according to an embodiment of the present invention;
fig. 3a to 3e are schematic process diagrams of a method for manufacturing a mid-infrared voltage tunable filter according to an embodiment of the present invention;
fig. 4 is a schematic flowchart of a filtering method of a mid-infrared voltage adjustable filter according to an embodiment of the present invention;
FIG. 5 is a diagram of an electric field distribution in a mid-IR voltage tunable filter at first point voltages of 1V, 2V, 3V, 4V, 5V, and 6V according to an embodiment of the present invention;
fig. 6 is a characteristic curve of the transmittance of the device in the filter with adjustable applied voltage and mid-infrared voltage according to the embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a mid-infrared voltage adjustable filter according to an embodiment of the present invention. The intermediate infrared voltage adjustable filter includes: a substrate layer 1, a sandwich structure layer and a cladding layer 5.
Specifically, the material of the substrate layer 1 may be SiO2. The dimensions of the substrate layer 1 are: the width is 100nm-300nm, and the height is 5nm-20 nm. Preferably, the dimensions of the substrate layer 1 are: the width is 200nm and the height is 10 nm.
The sandwich structure layer is positioned on the substrate layer 1. The sandwich structure layer comprises a first graphene layer 2, a hexagonal boron nitride layer 3 and a second graphene layer 4 from bottom to top in sequence. A first extension part 21 is arranged at one end of the first graphene layer 2, and a first metal film 22 is plated on the surface of the first extension part 21; the first metal film 22 is used for connection to a ground terminal. A second extension part 41 is arranged at one end of the second graphene layer 4, and a second metal film 42 is plated on the surface of the second extension part 41; the second metal film 42 is used for connecting a bias voltage, serves as a positive terminal of an applied bias voltage, and applies an applied voltage to the sandwich structure layer together with the first metal film connected to the ground terminal. That is, the first extension 21 and the second extension 41 are portions extending out of the first graphene layer 2 and the second graphene layer 4, respectively, and function to adjust the electrical conductivity of the graphene portions by applying an applied voltage to achieve adjustment of light transmittance, which achieves a dynamic adjustment function of the filter.
Specifically, the dimensions of the first graphene layer 2 are: the width is 100nm-300nm, and the height is 0.7 nm. Preferably, the dimensions of the first graphene layer 2 are: the width is 200nm and the height is 0.7 nm.
Specifically, the dimensions of the hexagonal boron nitride layer 3 are: the width is 100nm-300nm, and the height is 10nm-100 nm. Preferably, the dimensions of the hexagonal boron nitride layer 3 are: width 200nm and height 50 nm.
The hexagonal boron nitride 3 can enhance the strong coupling effect of the electric field in the device, thereby achieving the capability of improving the filtering range.
Specifically, the dimensions of the second graphene layer 4 are: the width is 100nm-300nm, and the height is 0.7 nm. Preferably, the dimensions of the second graphene layer 4 are: the width is 200nm and the height is 0.7 nm.
The interlayer structure layer of the embodiment adopts graphene-hexagonal boron nitride-graphene to form a heterostructure, the heterostructure can excite an excimer coupling effect, and the transmittance of a device in a specific waveband is greatly improved.
The cladding 5 is located on the sandwich structure layer. Specifically, the dimensions of the cladding 5 are: the width is 100nm-300nm, and the height is 5nm-200 nm. Preferably, the dimensions of the cladding 5 are: the width is 200nm and the height is 10 nm.
That is, in this embodiment, the substrate layer 1, the first graphene layer 2, the hexagonal boron nitride layer 3, the second graphene layer 4, and the cladding layer 5 have the same width, which is 100nm to 300 nm.
The medium infrared voltage adjustable filter is of a plane structure, and the total size of the medium infrared voltage adjustable filter is as follows: the total width is 100nm-300nm, and the total height is 21.4nm-321.4 nm.
In a specific embodiment, when an external voltage of 1V to 6V is applied between the first graphene layer 2 and the second graphene layer 4, the transmittance range of the corresponding filter is 4.12% to 115.76%, thereby realizing a filtering function; and because the applied voltage of the filter is adjustable, the filter can realize an adjustable dynamic filtering function.
In this embodiment, a voltage is applied to a connection portion between the second graphene layer 4 and the cladding layer 5 of the intermediate infrared voltage adjustable filter to obtain a device transmittance, and dynamic filtering is performed according to a relationship between the magnitude of the device transmittance and an incident wave number, that is, final filtering is performed by controlling the applied voltage, so that the transmittance range is 4.12% to 115.76%, thereby implementing dynamic filtering.
The intermediate infrared voltage adjustable filter can filter in an intermediate infrared band, filter interference signals such as noise signals in space, allow a part of waves in the intermediate infrared band to pass through, and avoid adverse effects of the interference signals on information transmission.
Example two
On the basis of the first embodiment, please refer to fig. 2 and fig. 3a to 3e, fig. 2 is a schematic flow chart of a method for manufacturing a mid-infrared voltage adjustable filter according to an embodiment of the present invention, and fig. 3a to 3e are schematic process diagrams of a method for manufacturing a mid-infrared voltage adjustable filter according to an embodiment of the present invention. The preparation method comprises the following steps:
s1, preparing the substrate layer 1, please refer to fig. 3 a.
Specifically, a buried oxide layer is processed On an SOI (Silicon-On-Insulator, Silicon On an insulating substrate) wafer, the thickness of the buried oxide layer is 2 μm, and the buried oxide layer is etched by using a plasma etching method to form the substrate layer 1. Wherein the buried oxide layer is SiO2The substrate layer 1 is SiO2。
S2, transferring the substrate layer 1 to form a first graphene layer 2, wherein one end of the first graphene layer 2 extends relative to the substrate layer 1 to form a first extension 21, and metallizing a surface of the first extension 21 to form a first metal film 22, as shown in fig. 3 b.
Specifically, graphene is grown on metal copper through a chemical vapor deposition method, PMMA (polymethyl methacrylate) is covered on the surface of the graphene, and after the metal copper, the graphene and the PMMA are baked at the temperature of 110 ℃ for 10 minutes, the graphene and the PMMA are soaked in 45% FeCl3Cleaning the solution, removing metal copper, transferring graphene and PMMA (polymethyl methacrylate) into deionized water by using a PET (Polyethylene terephthalate) substrate to clean, fishing out the graphene and PMMA by using a substrate layer 1 after cleaning is finished, finally, putting the transferred graphene and PMMA substrate into a dryer to dry, soaking the graphene and PMMA substrate into an acetone solution or a mixed solution of acetone and isopropanol after natural cooling is finished, removing the PMMA to form single-layer graphene, trimming the single-layer graphene by using a plasma oxidation mode to form a first graphene layer 2, and finishing a second graphene layerThe preparation of a graphene layer 2 on a substrate layer 1. The thickness of PMMA is 200nm, and PMMA is used for protecting graphene.
While the preparation of the first graphene layer 2 is completed, one end of the first graphene layer 2 extends out of a portion with respect to the substrate layer 1, and the portion extending out is the first extension 21. The first extension 21 is then metalized and used as a ground for an applied bias. The metallization is to plate a metal film on the surface of the first extension portion 21 to facilitate metal connection.
And S3, forming a hexagonal boron nitride layer 3 on the surface of the first graphene layer 2. Please refer to fig. 3 c.
S4, transferring on the hexagonal boron nitride layer 3 to form a second graphene layer 4, wherein one end of the second graphene layer 4 extends relative to the hexagonal boron nitride layer 3 to form a second extension portion 41, and metallizing the surface of the second extension portion 41 to form a second metal film 42, as shown in fig. 3 d.
Specifically, the operation method is the same as the method of step S2, namely, graphene is grown on the metal copper by a chemical vapor deposition method, PMMA is covered on the surface of the graphene, and after the metal copper + graphene + PMMA are baked at the temperature of 110 ℃ for 10 minutes, the graphene is soaked in 45% FeCl3The method comprises the steps of cleaning in a solution, removing metal copper, transferring graphene and PMMA to deionized water by using a PET substrate for cleaning, fishing up a graphene and PMMA layer by using a hexagonal boron nitride layer 3 after cleaning is finished, finally, putting the transferred graphene and PMMA layer substrate into a dryer for drying, soaking the graphene and PMMA layer substrate into an acetone solution or a mixed solution of acetone and isopropanol after natural cooling, removing PMMA to form single-layer graphene, finishing the single-layer graphene by using a plasma oxidation mode to form a second graphene layer 4, and finishing the preparation of the second graphene layer 4 on the hexagonal boron nitride layer 3. The thickness of PMMA is 200nm, and PMMA is used for protecting graphene.
While the preparation of the second graphene layer 4 is completed, one end of the second graphene layer 4 extends out of a portion with respect to the hexagonal boron nitride layer 3, and the portion extending out is the second extension portion 41. The second extension 41 and the first extension 21 may be located in two opposite directions, for example, in fig. 3d, the second extension 41 is located on the right side of the filter, and the first extension 21 is located on the left side of the filter.
Thereafter, the second extension portion 41 is metallized, and this portion is used as the positive terminal of the applied bias voltage, i.e., the applied voltage. The metallization is to plate a metal film on the surface of the second extension portion 41 to facilitate metal connection.
S5, forming a cladding layer 5 on the second graphene layer 4, please refer to fig. 3 e.
Specifically, a cladding layer 5 is deposited on the surface of the second graphene layer 4 by using a chemical vapor deposition method. Preferably, the cladding 5 is air, and in this case, it is not necessary to use chemical vapor deposition; that is to say, when the second graphene layer 4 is prepared, the preparation of the filter is completed, and when the filter is used for filtering, the irradiation starting position of the waveband needs to be away from the second graphene layer 4 by a distance, which is the thickness of the cladding 5.
In the above filter, the substrate layer 1, the first graphene layer 2 (not including the first extension 21), the hexagonal boron nitride layer 3, the second graphene layer 4 (not including the second extension 41), and the cladding layer 5 have the same width, and the widths thereof are all 100nm to 300nm, and the widths are widths of the intermediate infrared voltage tunable filter. The sum of the heights of the substrate layer 1, the first graphene layer 2, the hexagonal boron nitride layer 3, the second graphene layer 4 and the cladding layer 5 is 21.4nm-321.4nm, and the sum of the heights is the height of the intermediate infrared voltage tunable filter.
EXAMPLE III
On the basis of the first embodiment and the second embodiment, please refer to fig. 4, and fig. 4 is a schematic flow chart of a filtering method of a mid-infrared voltage adjustable filter according to an embodiment of the present invention, in which the filtering method uses the filter of the first embodiment to perform filtering. Specifically, the size of the mid-infrared voltage adjustable filter employed in the present embodiment is as follows: the width of the substrate layer 1 is 200nm and the height is 10nm, the width of the first graphene layer 2 is 200nm and the height is 0.7nm, the width of the hexagonal boron nitride layer 3 is 200nm and the height is 50nm, the width of the second graphene layer 4 is 200nm and the height is 0.7nm, and the width of the cladding layer 5 is 200nm and the height is 10 nm.
The filtering method comprises the following steps:
and S1, selecting a plurality of first point voltages.
Specifically, the first point voltage is the on voltage of the filter (i.e., the applied voltage in the first and second embodiments), and the range of the first point voltage is 1V to 6V.
And S2, sequentially applying a plurality of first point voltages to the sandwich structure layer, and irradiating mid-infrared light waves on the surface of the cladding 5 to obtain the electric field distribution in the mid-infrared voltage adjustable filter under the first point voltages.
Specifically, in this embodiment, a first point voltage with a value of 1 to 6V and an interval of 0.001V to 0.05V is sequentially applied to the interlayer structure layer, that is, the first metal film 22 is grounded, positive voltages with a value of 1 to 6V and an interval of 0.001V to 0.05V are sequentially applied to the second metal film 42 at the joint of the second graphene layer 4 and the cladding 5, and mid-infrared light is irradiated on the surface of the cladding 5, so that the electric field distribution of the filter under a plurality of first point voltages is obtained.
In one embodiment, the relationship between the first point voltage and the electric field distribution is obtained by the following simulation. The method comprises the following specific steps: obtaining the relation between the first point voltage and the graphene refractive index by using MATLAB software, and inputting the graphene refractive index into COMSOL software according to the relation between the first point voltage and the graphene refractive index; and then selecting a first point voltage with the value of 1-6V and the interval of 0.001-0.05V in COMSOL software, and simulating the relation between the first point voltage and the electric field distribution in a middle infrared band. Referring to fig. 5, fig. 5 is a diagram illustrating electric field distribution in the mid-ir voltage tunable filter at first point voltages of 1V, 2V, 3V, 4V, 5V and 6V according to the embodiment of the present invention. As can be seen from fig. 5: the electric field distribution of the filter can be changed by changing the applied voltage, and the change of the electric field distribution can change the transmittance of the device.
And S3, calculating the device transmissivity corresponding to the first point voltages through an electromagnetic field according to the electric field distribution.
Specifically, after the relationship between the first point voltage and the electric field distribution is obtained through simulation by utilizing the COMSOL software, the COMSOL software can calculate the transmittance of the device through the electric field distribution, so that the relationship between the first point voltage and the transmittance of the device is obtained. Referring to fig. 6, fig. 6 is a characteristic curve of transmittance of a device in a filter with adjustable external voltage and mid-infrared voltage according to an embodiment of the present invention, where the characteristic curve reflects a magnitude of transmittance of the device that can be adjusted by changing voltage, so as to implement dynamic filtering of the filter. Further, 1V voltage is applied to the device to obtain the transmissivity of the first device to be 4.12% -99.02%; applying 2V voltage to the device to obtain a first device with the transmissivity of 4.13% -103.57%; applying 3V voltage to the device to obtain the first device with the transmissivity of 4.13-107.19%; applying a voltage of 4V to the device to obtain a first device with a transmittance of 4.13% -110.33%; applying a voltage of 5V to the device to obtain a first device with a transmittance of 4.13% -113.16%; the first device transmittance was 4.13% to 115.76% when a voltage of 6V was applied across the device.
And S4, filtering by using a middle infrared voltage adjustable filter according to the transmissivity of the device.
Specifically, the transmissivity of the device is obtained through the steps, so that the filtering of the mid-band signals of the filter is realized by utilizing voltage regulation.
Further, since the transmittance of the devices corresponding to different first point voltages is different, the transmittance of the device corresponding to the first point voltage can be adjusted only by adjusting the first point voltage, so that the dynamically tunable filtering of the voltage can be realized.
In the embodiment, a voltage is applied to a connection position of the second graphene layer 4 and the cladding layer 5 of the intermediate infrared voltage adjustable filter to obtain the transmittance of the device, and output filtering is performed in a range of the transmittance of the device, that is, final filtering is realized by controlling the applied voltage, so that the maximum filtering range is 4.12% -115.76%.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A mid-infrared voltage adjustable filter, comprising:
a substrate layer (1);
the interlayer structure layer is positioned on the substrate layer (1), and comprises a first graphene layer (2), a hexagonal boron nitride layer (3) and a second graphene layer (4) from bottom to top, wherein one end of the first graphene layer (2) is provided with a first extending portion (21), a first metal film (22) is plated on the surface of the first extending portion (21), one end of the second graphene layer (4) is provided with a second extending portion (41), a second metal film (42) is plated on the surface of the second extending portion (41), the first graphene layer (2), the hexagonal boron nitride layer (3) and the second graphene layer (4) form a heterojunction structure, the hexagonal boron nitride layer (3) is used for enhancing the electric field coupling effect inside a device, and the heterojunction structure is used for exciting an excimer coupling effect;
a cladding (5) on the sandwich structure layer;
the transmittance of the filter ranges from 4.12% to 115.76% under the applied voltage of 1V to 6V.
2. The mid-infrared voltage tunable filter according to claim 1, wherein the substrate layer (1) has a width of 100nm to 300nm and a height of 5nm to 20 nm.
3. The mid-infrared voltage tunable filter according to claim 1, wherein the first graphene layer (2) has a width of 100nm to 300nm and a height of 0.7 nm.
4. The mid-infrared voltage tunable filter according to claim 1, wherein the hexagonal boron nitride layer (3) has a width of 100nm to 300nm and a height of 10nm to 100 nm.
5. The mid-infrared voltage tunable filter according to claim 1, wherein the second graphene layer (4) has a width of 100nm to 300nm and a height of 0.7 nm.
6. The mid-infrared voltage tunable filter according to claim 1, wherein the cladding (5) has a width of 100nm to 300nm and a height of 5nm to 200 nm.
7. A preparation method of a medium infrared voltage adjustable filter is characterized in that under an applied voltage of 1V-6V, the transmissivity of the filter ranges from 4.12% to 115.76%, and the preparation method comprises the following steps:
s1, preparing a substrate layer (1);
s2, transferring and forming a first graphene layer (2) on the substrate layer (1), wherein one end of the first graphene layer (2) extends relative to the substrate layer (1) to form a first extension portion (21), and metalizing the surface of the first extension portion (21) to form a first metal film (22);
s3, preparing a hexagonal boron nitride layer (3) on the first graphene layer (2);
s4, transferring and forming a second graphene layer (4) on the hexagonal boron nitride layer (3), wherein one end of the second graphene layer (4) extends relative to the hexagonal boron nitride layer (3) to form a second extending portion (41), and metallizing the surface of the second extending portion (41) to form a second metal film (42), the first graphene layer (2), the hexagonal boron nitride layer (3) and the second graphene layer (4) form a heterojunction structure, the hexagonal boron nitride layer (3) is used for enhancing the electric field coupling effect inside the device, and the heterojunction structure is used for exciting the excimer coupling effect;
and S5, forming a cladding (5) on the surface of the second graphene layer (4).
8. A filtering method of a mid-infrared voltage adjustable filter is characterized in that the filtering method is implemented by the mid-infrared voltage adjustable filter according to any one of claims 1-6, and comprises the following steps:
s1, selecting a plurality of first point voltages, wherein the range of the first point voltages is 1-6V, and the interval is 0.001V-0.05V;
s2, sequentially applying the first point voltages to the sandwich structure layer, and irradiating mid-infrared light waves on the surface of the cladding (5) to obtain electric field distribution in the mid-infrared voltage adjustable filter under the first point voltages;
s3, calculating the device transmissivity corresponding to the first point voltages through an electromagnetic field according to the electric field distribution;
and S4, filtering by using the intermediate infrared voltage adjustable filter according to the transmissivity of the device.
9. The filtering method of the mid-infrared voltage adjustable filter as claimed in claim 8, wherein the step S2 includes:
and connecting a first metal film (22) with a grounding end, sequentially adding a plurality of first point voltages to a second metal film (42), and irradiating the mid-infrared light on the surface of a cladding (5) to obtain the electric field distribution in the mid-infrared voltage adjustable filter under each first point voltage.
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| CN109856819A (en) * | 2019-04-16 | 2019-06-07 | 湖南师范大学 | A kind of positive and negative adjustable optical time delay unit of infrared band |
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| CN207799303U (en) * | 2017-04-12 | 2018-08-31 | 中国计量大学 | A kind of high-performance double-layer graphene THz wave transmission-type modulator |
| CN109856819A (en) * | 2019-04-16 | 2019-06-07 | 湖南师范大学 | A kind of positive and negative adjustable optical time delay unit of infrared band |
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