CN105047589B - 晶圆解键合装置 - Google Patents

晶圆解键合装置 Download PDF

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CN105047589B
CN105047589B CN201510404757.1A CN201510404757A CN105047589B CN 105047589 B CN105047589 B CN 105047589B CN 201510404757 A CN201510404757 A CN 201510404757A CN 105047589 B CN105047589 B CN 105047589B
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wafer
cutter
slide glass
bonding
table top
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CN105047589A (zh
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尹明
唐昊
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Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
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Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
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Priority to US15/534,196 priority patent/US10204813B2/en
Priority to EP15897499.8A priority patent/EP3321955B1/en
Priority to JP2017537281A priority patent/JP6527947B2/ja
Priority to PCT/CN2015/084182 priority patent/WO2017004843A1/zh
Priority to KR1020177019554A priority patent/KR101990413B1/ko
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Abstract

本发明提供一种晶圆解键合装置，它包括：用于放置键合后晶圆和载片的台面；以及一带有出气孔的刀具，所述刀具通过可调节装置设置在台面的附近，通过可调节装置控制刀具做远离台面或靠近台面的运动，刀具上设有刀头，用于在键合后晶圆和载片的结合处的膜或胶上刺出一缺口，所述出气孔设置在刀头上，所述刀具上还设有进气孔，所述进气孔与出气孔连通，所述进气孔与一气体发生装置连接，用于向台面上的键合后晶圆和载片的结合处吹气。采用上述晶圆解键合装置自动化程度高，操作更加简便。

Description

晶圆解键合装置
技术领域：
本发明涉及微电子技术领域，具体讲是一种晶圆解键合装置。
背景技术：
随着人们对电子产品的要求朝着小型化的方向发展，电子芯片也朝向越来越薄的方向发展，但是硅晶圆的厚度如果要减薄至100微米或以下时，非常容易发生碎片、或者是在对晶圆做处理时由于应力导致晶圆弯曲变形等，无法对这种超薄晶圆进行直接加工处理。因此，为了能加工处理这类超薄晶圆，需要将这种超薄的晶圆首先与一载片临时键合，键合之后，晶圆与载片粘节为一体，就可以对晶圆进行减薄、TSV的制造、再布线层的制造、形成内部互连等工艺制作。然后再将晶圆与载片进行分离，并对减薄后的晶圆进行清洗、切割等工艺，完成对这种超薄的晶圆的加工工艺。
目前行业内采用的晶圆键合方法一般是在在载片和晶圆之间涂覆键合胶，然后再采用键合机将载片和晶圆键合在一起。晶圆的解键合是指将已经键合好的载片和晶圆进行分离。
针对上述临时键合的晶圆进行解键合一般有以下几种方法：第一种，利用溶剂从键合的载片和晶圆的边缘溶解键合时的键合胶，第二种就是采用热力剪切分离，第一种方法，溶解剂从晶圆和载片结合的边缘处慢慢溶解键合胶，溶解剂到达晶圆中心的时间太长，分离效率太低，而且直接将载片与晶圆分离还需要有特殊的载板来固定晶圆，防止在分离时，晶圆和载片混合，工序麻烦，成本较高。采用第二种方法，需要专门的设备进行热力剪切，成本较高，而且剪切时容易损坏晶圆，成功率较低。
为此，申请人发明了一种晶圆键合方法，这种方法是在载片上做表面处理，形成一层隔离膜，隔离膜与载片之间的粘接度适中，在不故意去撕的情况下，薄膜不会从载片上脱离，但是当施力撕扯时，可将薄膜从载片上剥离，然后键合时将带有隔离膜的载片的正面与晶圆之间涂覆键合胶，将晶圆和载片键合在一起，申请人还发明了一种晶圆解键合方法，这种方法采用气流发生装置制造出朝向晶圆和载片键合的结合处的气流，通过气流使载片与晶圆分离。但是申请人在研究中发现为了适应工业化生产，仍然需要一种自动化程度高，操作更加简便的晶圆解键合装置。
发明内容：
本发明解决的技术问题是，克服现有的技术缺陷，提供一种自动化程度高，操作更加简便的晶圆解键合装置。
本发明提供的技术方案是：本发明提供一种晶圆解键合装置，它包括：用于放置键合后晶圆和载片的台面；以及一带有出气孔的刀具，所述刀具通过可调节装置设置在台面的附近，通过可调节装置控制刀具做远离台面或靠近台面的运动，刀具上设有刀头，用于在键合后晶圆和载片的结合处的膜或胶上刺出一缺口，所述出气孔设置在刀头上，所述刀具上还设有进气孔，所述进气孔与出气孔连通，所述进气孔与一气体发生装置连接，用于向台面上的键合后晶圆和载片的结合处吹气。
采用上述结构后，通过刀具在晶圆键合的结合处先切个缺口，然后再利用气体发生装置对该缺口吹气，就可以使载片和晶圆解键合，将出气孔设在刀头上，刚好可以将出气孔正对着缺口，具体使用的效果非常好，不需要施加太大的空气压力就可以使两块晶圆分，分离速度非常快，操作非常简便。
所述台面的附近还设有图像采集装置和灯光装置，所述图像采集装置的采集端对准刀具的刀头，用于采集刀头在贴近键合后晶圆和载片的结合处的图像，所述灯光装置提供光源使图像更加清晰。采用这种结构可以通过图像采集装置采集到的图像来判断刀头是否与键合后晶圆的结合处对准，如果没有对准，则可以通过调整可调节装置来调整刀头的位置。由于一般晶圆键合装置都在封闭的环境中进行，因此需要设置灯光装置使采集到的图像更加清晰。
所述晶圆解键合装置还包括一带有吸盘的机械手，所述机械手通过吸盘可吸住台面上位于上方的键合后的晶圆或者载片，用于在吹气时，晶圆和载片分离之后将位于上方的载片或晶圆拿开。机械手通过吸盘来吸住台面上的键合后晶圆的上面的晶圆的上表面，施加非常小的向上的力，当吹气时，上、下两块晶圆之间出现缝隙之后，上、下两端晶圆之间的粘接力非常小，则通过机械手可以轻松使上、下两块晶圆完全分离，然后可以通过机械手的移动将分离后位于上面的晶圆移动到其它位置，以便后续操作，整个过程可以通过设置编程自动完成，自动化程度高。
所述晶圆解键合装置还包括一控制器，所述控制器与图像采集装置以及可调节装置连接，通过图像采集装置采集到键合后的晶圆的结合处的图像，然后经过图像分析处理之后控制可调节装置来调节刀具的位置，使刀具的刀头自动对准键合后晶圆和载片的结合处。通过在控制器内进行编程，可以根据图像采集装置采集到的图像结果自动控制刀头的位置，确保刀头始终对着键合后晶圆的结合处，做到自动调整，自动化程度高。
所述灯光装置的光线呈角度照射在台面上的键合后的晶圆和载片上，所述灯光为可被图像采集装置检测出颜色的光，所述灯光为可穿透晶圆和载片，并可被晶圆和载片结合处的膜所反射的光线。采用这种结构，灯光照射在晶圆上时，由于晶圆和载片与晶圆和载片之间的结合膜对于同一种波长的光的照射的结果不一样，膜可以反射，而晶圆和载片则可以透射，那么膜和晶圆之间的颜色差别就比较大，这样使得图像采集装置采集到的键合后晶圆结合处的图像的分辨度就更高，结果就更加准确，这种光例如紫外线、或者可视的紫光等。
它还包括一气体温度调节装置，所述气体温度调节装置设在气体发生装置与气孔之间，用于调节气孔出气的温度。。采用上述装置，可以在吹风时调整气流的温度，也就是说可以吹热风或冷风，方便后续的加工。
作为改进，所述出气孔设置在刀具的刀头的上表面上。采用这种结构，在刺出缺口时，就马上可以通过出气孔进行吹气，操作简单方便。
所述刀具的刀头的上表面设有两个出气孔，所述刀具的侧面设有斜槽。采用两个出气孔使吹风更加稳定，设置斜槽可以用于存放与进气孔连接的气管，以及通过斜槽放置摄像头及摄像头的线缆。
附图说明：
附图1为本发明的实施例的结构示意图；
附图2为图1中A处放大示意图；
附图3为刀具的结构示意图；
附图4为机械手以及吸盘的结构示意图；
如图所示：1、台面、2刀具，2.1、刀头，2.2、出气孔，2.3、进气孔，2.4、斜槽，3、机械手，3.1、吸盘，3.2、位移机构，4、灯光装置，5、机柜。
具体实施方式
下面结合附图和具体实施例对本发明做详细说明：
如图1-图4所示：本发明提供一种晶圆解键合装置，它包括：用于放置键合后晶圆的台面1；所述台面1附近设有一带有出气孔2.2的刀具2，所述刀具2通过可调节装置设置在台面1的周围，通过可调节装置控制刀具2做远离台面1或靠近台面1的运动，所述可调节装置采用位移机构，并可以微调刀具2的位置，一般采用电缸或者气缸，微调刀具2的位置一般采用步进电机，这些为现有技术，故未详述，刀具2上设有刀头2.1，用于在键合后晶圆和载片的结合处刺出一缺口，所述出气孔2.2设置在刀头2.1的上表面，当然出气孔2.2也可以设置在刀头2.1的下表面，通过刀头2.1的下表面对晶圆和载片的结合处吹气，所述刀具2上还设有进气孔2.3，所述进气孔2.3与出气孔2.2连通，所述进气孔2.3与一气体发生装置连接，用于向台面上的键合后晶圆和载片的结合处吹气。所述气体发生装置的输出口与进气孔2.3连接，用于通过出气孔2.2向键合后的晶圆的结合处吹气。一般气体发生装置都设在机柜的内部，故图中未画出。
可以从实施例中看出，采用上述的晶圆解键合装置还包括机柜5以及一些其它外设结构，这些都是在制造设备时可以增设或者不增设的结构，但是只要是本发明所述基本结构实现晶圆解键合的则均应在本申请保护范围之内。
采用上述结构后，通过刀具在晶圆键合的结合处先切个缺口，然后再利用气体发生装置对该缺口吹气，就可以使载片和晶圆解键合，将出气孔设在刀具的上表面，刚好可以将出气孔正对着缺口，具体使用的效果非常好，不需要施加太大的空气压力就可以使两块晶圆分，分离速度非常快，操作非常简便。
所述台面的附近还设有图像采集装置和灯光装置4，所述图像采集装置的采集端对准刀具2的刀头2.1，用于采集刀头2.1在贴近键合后晶圆的结合处的图像，所述灯光装置4提供光源使图像更加清晰。由于机柜挡住，因此，图中仅示出灯光装置4，但是图像采集装置本身为现有技术，故即使未示出，也不影响本发明的表述清楚。在本实施例中图像采集装置采用摄像头，采用这种结构可以通过图像采集装置采集到的图像来判断刀头是否与键合后晶圆的结合处对准，如果没有对准，则可以通过调整可调节装置来调整刀头的位置。由于一般晶圆键合装置都在封闭的环境中进行，因此需要设置灯光装置使采集到的图像更加清晰。
它还包括一带有吸盘3.1的机械手3，所述机械手3通过吸盘3.1可吸住台面上位于上方的键合后的晶圆或者载片，用于在吹气时，晶圆和载片分离之后将位于上方的载片或晶圆拿开。机械手一般采用气缸或者电缸驱动的机械手，在将位于上方的晶圆或载片与下方的载片或晶圆分离后，可将上方的晶圆或载片移动到其它位置。一般情况下载片在上方，晶圆在下方，但也可以更换载片和晶圆的位置，下方的台面上设有多个吸气孔，吸力比较均匀，用来吸住位于下方的晶圆，载片位于上方，当吹气使载片和晶圆分离之后，机械手利用吸盘吸住载片，并将载片移动到其它位置，以便后续操作，整个过程可以通过设置编程自动完成，自动化程度高。
所述晶圆解键合装置还包括一控制器，所述控制器与图像采集装置以及可调节装置连接，通过图像采集装置采集到键合后晶圆和载片结合处的图像，然后经过图像分析处理之后控制可调节装置来调节刀具的位置，使刀具的刀头正对着键合后晶圆和载片结合处。通过在控制器内进行编程，可以根据图像采集装置采集到的图像结果自动控制刀头的位置，确保刀头始终对着键合后晶圆的结合处，做到自动调整，自动化程度高。这种根据图像来控制物体的位置的程序为现有常规手段，因此，并不在此详述其具体程序。但是用在本发明所述晶圆解键合装置中根据键合后的晶圆的结合处的图像来调整刀头位置的方法则是本领域中所从未出现的技术手段。
所述灯光装置的光线呈角度照射在台面上的键合后的晶圆和载片上，所述灯光为可被图像采集装置检测出颜色的光，所述灯光为可穿透晶圆和载片，并可被晶圆和载片结合处的膜所反射的光线。采用这种结构，灯光照射在晶圆上时，由于晶圆和载片与晶圆和载片之间的结合膜对于同一种波长的光的照射的结果不一样，膜可以反射，而晶圆和载片则可以透射，那么膜和晶圆之间的颜色差别就比较大，这样使得图像采集装置采集到的键合后晶圆结合处的图像的分辨度就更高，结果就更加准确，这种光例如紫外线、或者可视的紫光等，只要是能够利用晶圆和载片与结合处的膜的光反射的波长不同的原理，采用可被图像采集装置识别的带有颜色的光照射台面，该光可穿透晶圆和载片，并可被晶圆和载片结合处的膜所反射，这样膜的部分的颜色就与晶圆和载片的颜色区分较大，可以更加准确地被识别。
它还包括一气体温度调节装置，所述气体温度调节装置设在气体发生装置与气孔之间，用于调节气孔出气的温度。采用上述装置，可以在吹风时调整气流的温度，也就是说可以吹热风或冷风，方便后续的加工。
作为改进，所述出气孔设置在刀具的刀头的上表面上。采用这种结构，在刺出缺口时，就马上可以通过出气孔进行吹气，操作简单方便。
所述刀具的刀头的上表面设有两个出气孔，所述刀具的侧面设有斜槽。采用两个出气孔使吹风更加稳定，设置斜槽可以用于存放与进气孔连接的气管，以及通过斜槽放置摄像头及摄像头的线缆。

Claims (8)

1.一种晶圆解键合装置，其特征在于：
它包括：用于放置键合后晶圆和载片的台面；
以及一带有出气孔的刀具，所述刀具通过可调节装置设置在台面的附近，通过可调节装置控制刀具做远离台面或靠近台面的运动，刀具上设有刀头，用于在键合后晶圆和载片的结合处的膜或胶上刺出一缺口，所述出气孔设置在刀头上，所述刀具上还设有进气孔，所述进气孔与出气孔连通，所述进气孔与一气体发生装置连接，用于向台面上的键合后晶圆和载片的结合处吹气，所述台面的附近还设有图像采集装置，所述图像采集装置的采集端对准刀具的刀头。
2.根据权利要求1所述的晶圆解键合装置，其特征在于：所述台面的附近还设有灯光装置，所述灯光装置提供光源使图像更加清晰，图像采集装置用于采集刀头在贴近键合后晶圆和载片的结合处的图像。
3.根据权利要求1所述的晶圆解键合装置，其特征在于：它还包括一带有吸盘的机械手，所述机械手通过吸盘可吸住台面上位于上方的键合后的晶圆或者载片，用于在吹气时，晶圆和载片分离之后将位于上方的载片或晶圆拿开。
4.根据权利要求2所述的晶圆解键合装置，其特征在于：它还包括一控制器，所述控制器与图像采集装置以及可调节装置连接，通过图像采集装置采集到键合后的晶圆的结合处的图像，然后经过图像分析处理之后控制可调节装置来调节刀具的位置，使刀具的刀头自动对准键合后晶圆和载片的结合处。
5.根据权利要求2所述的晶圆解键合装置，其特征在于：所述灯光装置的光线呈角度照射在台面上的键合后的晶圆和载片上，所述灯光为可被图像采集装置检测出颜色的光，所述灯光为可穿透晶圆和载片，并可被晶圆和载片结合处的膜所反射的光线。
6.根据权利要求1所述的晶圆解键合装置，其特征在于：它还包括一气体温度调节装置，所述气体温度调节装置设在气体发生装置与气孔之间，用于调节气孔出气的温度。
7.根据权利要求1所述的晶圆解键合装置，其特征在于：所述出气孔设置在刀具的刀头的上表面上。
8.根据权利要求1所述的晶圆解键合装置，其特征在于：所述刀具的刀头的上表面设有两个出气孔，所述刀具的侧面设有斜槽。
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10074178B2 (en) * 2015-01-30 2018-09-11 Dental Imaging Technologies Corporation Intra-oral image acquisition alignment
CN107665848B (zh) * 2016-07-29 2020-08-25 上海微电子装备（集团）股份有限公司 一种解键合调平装置及解键合方法
CN106816405B (zh) * 2017-01-20 2020-03-27 中国科学院微电子研究所 一种晶圆临时键合方法
CN108511351B (zh) * 2017-02-28 2020-05-01 上海微电子装备（集团）股份有限公司 一种解键合装置及控制方法
CN107200301B (zh) * 2017-05-23 2019-02-12 中国科学院微电子研究所 一种mems晶片的贴膜对准装置
US10374161B2 (en) * 2017-08-16 2019-08-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Glass substrate separation method and glass substrate separation device
US11462432B2 (en) * 2018-03-15 2022-10-04 Intel Corporation Dual side de-bonding in component carriers using photoablation
TW202015144A (zh) * 2018-10-01 2020-04-16 巨擘科技股份有限公司 基板分離系統及方法
CN110034050B (zh) * 2019-04-17 2021-07-20 大族激光科技产业集团股份有限公司 解键合装置及其穿刺机构
CN110098140B (zh) * 2019-05-16 2021-03-09 芯盟科技有限公司 低温晶圆直接键合机台和晶圆键合方法
CN110370153B (zh) * 2019-06-10 2021-07-13 浙江晶盛机电股份有限公司 一种用于抛光设备的上定盘晶片剥离装置
US11670524B2 (en) * 2020-01-31 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Fully automated wafer debonding system and method thereof
CN113299576B (zh) * 2020-02-21 2022-11-22 济南晶正电子科技有限公司 一种薄膜机械分离装置
CN111332566B (zh) * 2020-03-23 2024-07-02 苏州领裕电子科技有限公司 撕膜排废模组
CN111319835B (zh) * 2020-03-23 2024-07-02 苏州领裕电子科技有限公司 工件保护膜自动撕取设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202275809U (zh) * 2011-10-19 2012-06-13 科达半导体有限公司 一种分离治具
CN103424910A (zh) * 2012-05-23 2013-12-04 乐金显示有限公司 制造轻薄液晶显示器的方法和制造液晶显示器的生产线
CN204696090U (zh) * 2015-07-08 2015-10-07 浙江中纳晶微电子科技有限公司 晶圆解键合装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204319A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 半導体チップのピックアップ方法及びピックアップ装置
WO2001010644A1 (en) * 1999-08-10 2001-02-15 Silicon Genesis Corporation Method and apparatus for cleaving a substrate
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
JP3629411B2 (ja) * 2000-06-13 2005-03-16 シャープ株式会社 エアーナイフ乾燥装置
JP2002075915A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP2003273196A (ja) * 2002-03-19 2003-09-26 Sanken Electric Co Ltd 半導体素子ピックアップ装置用突き上げ部材
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
US9040420B2 (en) * 2005-03-01 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including peeling layers from substrates by etching
CN101323152B (zh) * 2008-06-20 2010-07-21 艾逖恩机电(深圳)有限公司 一种顶针模块、使用该模块分离晶片和蓝膜的方法
JP5360073B2 (ja) * 2009-02-06 2013-12-04 旭硝子株式会社 電子デバイスの製造方法およびこれに用いる剥離装置
US8858756B2 (en) * 2011-10-31 2014-10-14 Masahiro Lee Ultrathin wafer debonding systems
US8756783B2 (en) * 2011-11-29 2014-06-24 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method of fully, automatically removing a polarizer of an LCD panel
US9806054B2 (en) * 2011-12-22 2017-10-31 Ev Group E. Thallner Gmbh Flexible substrate holder, device and method for detaching a first substrate
JP5635019B2 (ja) * 2012-01-17 2014-12-03 東京エレクトロン株式会社 剥離装置、剥離システム、剥離方法および剥離プログラム
JP5807554B2 (ja) * 2012-01-19 2015-11-10 旭硝子株式会社 剥離装置、及び電子デバイスの製造方法
TWI445118B (zh) * 2012-02-09 2014-07-11 Subtron Technology Co Ltd 分邊設備及其操作方法
KR101190442B1 (ko) * 2012-02-15 2012-10-11 세크론 주식회사 다이 이젝팅 방법, 다이 이젝팅 유닛, 다이 픽업 방법 및 다이 픽업 장치
JP2013219328A (ja) * 2012-03-13 2013-10-24 Tokyo Electron Ltd 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
FR2995441B1 (fr) * 2012-09-07 2015-11-06 Soitec Silicon On Insulator Dispositif de separation de deux substrats
JP5870000B2 (ja) * 2012-09-19 2016-02-24 東京エレクトロン株式会社 剥離装置、剥離システムおよび剥離方法
JP6101084B2 (ja) * 2013-01-17 2017-03-22 株式会社ディスコ 分離装置
JP5977710B2 (ja) * 2013-05-10 2016-08-24 東京エレクトロン株式会社 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6070968B2 (ja) * 2013-07-01 2017-02-01 旭硝子株式会社 剥離起点作成装置及び方法
CN103560101B (zh) * 2013-11-11 2016-05-04 京东方科技集团股份有限公司 一种柔性器件剥离设备
JP6301137B2 (ja) * 2014-01-22 2018-03-28 株式会社ディスコ 分離装置
CN103839862A (zh) * 2014-02-28 2014-06-04 华进半导体封装先导技术研发中心有限公司 一种机械式拆键合工艺方法
JP6548871B2 (ja) * 2014-05-03 2019-07-24 株式会社半導体エネルギー研究所 積層体の基板剥離装置
JP6366996B2 (ja) * 2014-05-19 2018-08-01 株式会社ディスコ リフトオフ方法
US9508586B2 (en) * 2014-10-17 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Debonding schemes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202275809U (zh) * 2011-10-19 2012-06-13 科达半导体有限公司 一种分离治具
CN103424910A (zh) * 2012-05-23 2013-12-04 乐金显示有限公司 制造轻薄液晶显示器的方法和制造液晶显示器的生产线
CN204696090U (zh) * 2015-07-08 2015-10-07 浙江中纳晶微电子科技有限公司 晶圆解键合装置

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