JP6101084B2 - 分離装置 - Google Patents
分離装置 Download PDFInfo
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- JP6101084B2 JP6101084B2 JP2013006184A JP2013006184A JP6101084B2 JP 6101084 B2 JP6101084 B2 JP 6101084B2 JP 2013006184 A JP2013006184 A JP 2013006184A JP 2013006184 A JP2013006184 A JP 2013006184A JP 6101084 B2 JP6101084 B2 JP 6101084B2
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- 238000000926 separation method Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 165
- 239000002131 composite material Substances 0.000 claims description 52
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 19
- 238000003384 imaging method Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
- Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Separation, Sorting, Adjustment, Or Bending Of Sheets To Be Conveyed (AREA)
- Die Bonding (AREA)
Description
また、光デバイスの輝度を向上させるためにエピタキシー基板の表面に凹凸が形成されている場合には、レーザー光線が凹凸の壁に遮られバッファー層の破壊が抑制されエピタキシー基板の剥離が困難になるという問題がある。
複合基板を水平状態で支持する支持面を備えた支持基台と、
該支持基台に配設され該支持面に載置された複合基板の外周側面を支持する側面支持手段と、
該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第1の基板と第2の基板との境界部に挿入して第1の基板と第2の基板とを剥離する剥離手段と、を具備し、
該剥離手段は、該側面支持手段と対向する位置に該支持基台の該支持面と平行状態で配設され第1の基板と第2の基板との境界部に挿入する楔部を備えた剥離部材と、該剥離部材を該支持基台の該支持面に対して垂直な方向に移動して該楔部を第1の基板と第2の基板との境界部に位置付ける剥離部材位置付け手段と、該剥離部材の該楔部を該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第1の基板と第2の基板との境界部に進退せしめる剥離部材進退手段と、を具備しており、
該側面支持手段は、少なくとも2個のローラによって構成され、該2個のローラは上部大径部と下部小径部とを備え、複合基板の外周側面を回動可能に支持する、
ことを特徴とする分離装置が提供される。
図示の実施形態における分離装置は、複合基板を支持する支持基台2と、該支持基台2に配設された複合基板の外周側面を支持する側面支持手段3と、該支持基台2および側面支持手段3に支持された複合基板を剥離する剥離手段4を具備している。
図4には、上述した分離装置によって分離される複合基板の斜視図が示されている。
図4に示す複合基板6は、光デバイスウエーハ61と移設基板62とからなっている。光デバイスウエーハ61は、サファイア基板や炭化珪素等のエピタキシー基板611(第1の基板)の表面にバッファー層612を介して光デバイス層が形成されている。このように形成された光デバイスウエーハ61のエピタキシー基板611(第1の基板)の光デバイス層の表面にモリブデン(Mo)、銅(Cu)、シリコン(Si)等からなる移設基板62(第2の基板)が金錫(AuSn)等の接合金属層を介して接合されている。このように構成された複合基板6は、エピタキシー基板の裏面側からバッファー層612で吸収される波長(例えば248nm)のレーザー光線が照射されバッファー層612が破壊されている。
3:側面支持手段
31:ローラ
4:剥離手段
41:剥離部材
412:円錐状の楔部
42:剥離部材位置付け手段
421:案内部材
422:移動ブロック
423:移動手段
5:検出手段
51:撮像手段
52:表示手段
6:複合基板
Claims (2)
- 第1の基板と第2の基板とが接合された複合基板を第1の基板と第2の基板とに分離する分離装置であって、
複合基板を水平状態で支持する支持面を備えた支持基台と、
該支持基台に配設され該支持面に載置された複合基板の外周側面を支持する側面支持手段と、
該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第1の基板と第2の基板との境界部に挿入して第1の基板と第2の基板とを剥離する剥離手段と、を具備し、
該剥離手段は、該側面支持手段と対向する位置に該支持基台の該支持面と平行状態で配設され第1の基板と第2の基板との境界部に挿入する楔部を備えた剥離部材と、該剥離部材を該支持基台の該支持面に対して垂直な方向に移動して該楔部を第1の基板と第2の基板との境界部に位置付ける剥離部材位置付け手段と、該剥離部材の該楔部を該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第1の基板と第2の基板との境界部に進退せしめる剥離部材進退手段と、を具備しており、
該側面支持手段は、少なくとも2個のローラによって構成され、該2個のローラは上部大径部と下部小径部とを備え、複合基板の外周側面を回動可能に支持する、
ことを特徴とする分離装置。 - 該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第1の基板と第2の基板との境界部を検出して剥離部材の楔部と位置合わせする検出手段を備えている、請求項1の分離装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013006184A JP6101084B2 (ja) | 2013-01-17 | 2013-01-17 | 分離装置 |
TW102143495A TWI605532B (zh) | 2013-01-17 | 2013-11-28 | Separation device |
KR1020130153143A KR102063366B1 (ko) | 2013-01-17 | 2013-12-10 | 분리 장치 |
US14/134,052 US9266315B2 (en) | 2013-01-17 | 2013-12-19 | Separating apparatus |
CN201410015338.4A CN103943457B (zh) | 2013-01-17 | 2014-01-14 | 分离装置 |
DE102014200518.3A DE102014200518A1 (de) | 2013-01-17 | 2014-01-14 | Trennvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013006184A JP6101084B2 (ja) | 2013-01-17 | 2013-01-17 | 分離装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014138092A JP2014138092A (ja) | 2014-07-28 |
JP6101084B2 true JP6101084B2 (ja) | 2017-03-22 |
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JP2013006184A Active JP6101084B2 (ja) | 2013-01-17 | 2013-01-17 | 分離装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9266315B2 (ja) |
JP (1) | JP6101084B2 (ja) |
KR (1) | KR102063366B1 (ja) |
CN (1) | CN103943457B (ja) |
DE (1) | DE102014200518A1 (ja) |
TW (1) | TWI605532B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6145415B2 (ja) * | 2014-02-27 | 2017-06-14 | 東京エレクトロン株式会社 | 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム |
JP6345530B2 (ja) * | 2014-08-04 | 2018-06-20 | 株式会社ディスコ | ウエーハの加工方法 |
FR3028439B1 (fr) * | 2014-11-18 | 2017-03-24 | Airbus Operations Sas | Outil de separation |
JP6436389B2 (ja) * | 2015-02-18 | 2018-12-12 | Agc株式会社 | 剥離開始部作成装置、及び剥離開始部作成方法並びに電子デバイスの製造方法 |
CN105047589B (zh) * | 2015-07-08 | 2018-05-29 | 浙江中纳晶微电子科技有限公司 | 晶圆解键合装置 |
US10377118B2 (en) * | 2016-12-05 | 2019-08-13 | The Boeing Company | Preparing laminate materials for testing |
CN110395043B (zh) * | 2019-08-16 | 2024-03-12 | 江阴市合助机械科技有限公司 | 一种复合板材自动剥离设备 |
CN111660250B (zh) * | 2020-05-18 | 2021-10-01 | 台州市黄岩超骏塑模有限公司 | 一种地铁车辆车门螺母副滚动销拆装装置 |
Family Cites Families (14)
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JPS5818937A (ja) * | 1982-03-31 | 1983-02-03 | Nippon Kogaku Kk <Nikon> | 円板物体の位置決め装置 |
JPS63316450A (ja) * | 1987-06-19 | 1988-12-23 | Hitachi Ltd | ウエハ基準位置決め装置 |
CA2233127C (en) * | 1997-03-27 | 2004-07-06 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
JP2000049061A (ja) * | 1998-07-27 | 2000-02-18 | Canon Inc | 試料の処理装置及び処理方法 |
JP4365920B2 (ja) * | 1999-02-02 | 2009-11-18 | キヤノン株式会社 | 分離方法及び半導体基板の製造方法 |
JP4311702B2 (ja) * | 1999-12-08 | 2009-08-12 | キヤノン株式会社 | 複合部材の分離方法及び薄膜の製造方法 |
JP2002050749A (ja) * | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
JP2002075915A (ja) * | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
FR2834381B1 (fr) * | 2002-01-03 | 2004-02-27 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
CN201898118U (zh) * | 2010-12-06 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | 一种晶圆清洗装置 |
US8845859B2 (en) * | 2011-03-15 | 2014-09-30 | Sunedison Semiconductor Limited (Uen201334164H) | Systems and methods for cleaving a bonded wafer pair |
US8470129B1 (en) * | 2012-05-08 | 2013-06-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method and machine for separating liquid crystal panel and liner pad |
-
2013
- 2013-01-17 JP JP2013006184A patent/JP6101084B2/ja active Active
- 2013-11-28 TW TW102143495A patent/TWI605532B/zh active
- 2013-12-10 KR KR1020130153143A patent/KR102063366B1/ko active IP Right Grant
- 2013-12-19 US US14/134,052 patent/US9266315B2/en active Active
-
2014
- 2014-01-14 DE DE102014200518.3A patent/DE102014200518A1/de active Pending
- 2014-01-14 CN CN201410015338.4A patent/CN103943457B/zh active Active
Also Published As
Publication number | Publication date |
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KR20140093165A (ko) | 2014-07-25 |
TW201430985A (zh) | 2014-08-01 |
US9266315B2 (en) | 2016-02-23 |
JP2014138092A (ja) | 2014-07-28 |
CN103943457B (zh) | 2018-10-12 |
US20140196855A1 (en) | 2014-07-17 |
DE102014200518A1 (de) | 2014-07-17 |
KR102063366B1 (ko) | 2020-01-07 |
TWI605532B (zh) | 2017-11-11 |
CN103943457A (zh) | 2014-07-23 |
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