CN105023971A - Preparation method of low-surface recombination back electrode solar cell - Google Patents
Preparation method of low-surface recombination back electrode solar cell Download PDFInfo
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- CN105023971A CN105023971A CN201510422789.4A CN201510422789A CN105023971A CN 105023971 A CN105023971 A CN 105023971A CN 201510422789 A CN201510422789 A CN 201510422789A CN 105023971 A CN105023971 A CN 105023971A
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- 238000005215 recombination Methods 0.000 title claims abstract description 25
- 230000006798 recombination Effects 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 103
- 239000010703 silicon Substances 0.000 claims abstract description 103
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 76
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 15
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a low-surface recombination back electrode solar cell. The method includes the following steps that: a) texturization, heat diffusion p-n junction production, back surface polishing and phosphorosilicate glass removal are performed on a silicon wafer sequentially; b) PECVD film plating is performed on the front surface of the silicon wafer, so that a SiNx anti-reflection film can be formed; c) nano silicon slurry is printed on the back surface of the silicon wafer, so that a nano silicon electrode can be formed; d) the nano silicon electrode is quickly sintered in a sintering furnace of 700 850 DEG C, so that P+ silicon below the nano silicon electrode can be formed at the back surface of the silicon wafer; e) a Ag back electrode is prepared on the nano silicon electrode; f) a Ag back electric field is prepared at the back surface of the silicon wafer; g) a Ag positive electrode is prepared at the front surface of the silicon wafer; and h) the silicon wafer is subjected to high-temperature sintering, so that the solar cell can be formed. Compared with the prior art, the preparation method of the invention can reduce the resistance of the back electrode and greatly reduce the carrier recombination rate of the back surface of the silicon wafer, and improve the conversion efficiency of the cell.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of preparation method of low surface recombination backplate solar cell.
Background technology
Along with the exhaustion of fossil energy, energy problem becomes a significant problem of World Focusing gradually; Add being on the rise of environmental pollution, impel people to make great efforts to tap a new source of energy, particularly regenerative resource.Solar energy, as a kind of green energy resource, is one of new forms of energy having potentiality to be exploited most.Solar cell utilizes photovoltaic effect, and solar energy is converted to electric energy.Crystal silicon solar energy battery occupies the share of solar cell 90%, is solar battery product main in the market.The manufacturing cost of crystal silicon solar energy battery is mainly divided into two parts, and one is silicon chip, and another one is metal electrode, and metal electrode is divided into front electrode and backplate.Backplate is made up of Ag back electrode and Al back surface field: the effect of Ag back electrode is conduction on the one hand, is the welding of conveniently assembly on the other hand; Al back surface field not only can carry out transoid to silicon chip back side, forms p+ layer, reduces cell backside Carrier recombination, improves conversion efficiency, can also realize conducting function.
Due to silicon chip back side poor flatness, it is poor that backplate contacts with silicon chip back side, can reduce the conduction of backplate and the transoid effect of Al back surface field; In addition, Ag back electrode can not form p+ layer, is unfavorable for the lifting of battery conversion efficiency.Therefore, the focus that a kind of low surface recombination backplate high performance solar batteries becomes researcher's concern how is developed.
Summary of the invention
Technical problem to be solved by this invention is, a kind of preparation method of low surface recombination backplate solar cell is provided, under the prerequisite reducing backplate resistance, the Carrier recombination speed of silicon chip back side can be greatly reduced, the conversion efficiency of battery promoted.
In order to solve the problems of the technologies described above, the invention provides a kind of preparation method of low surface recombination backplate solar cell, comprising the steps:
A) making herbs into wool, thermal diffusion p-n junction, silicon chip back side polishing and dephosphorization silex glass are carried out successively to silicon chip;
B) carry out PECVD plated film at described front side of silicon wafer, form SiNx antireflective film;
C) at silicon chip back side printing nano-silicon slurry, nano-silicon electrode is formed;
D) silicon chip back side after nano-silicon electrode being carried out in the sintering furnace of 700-850 DEG C Fast Sintering under described nano-silicon electrode forms P+ silicon.
E) on nano-silicon electrode, Ag back electrode is prepared;
F) prepare Al at silicon chip back side and carry on the back electric field;
G) front side of silicon wafer prepares Ag positive electrode;
H) high temperature sintering is carried out to silicon chip and form solar cell.
Preferably, the thickness of described nano-silicon electrode is 1-5 μm, and resistivity is 0.01-0.5 Ω .cm.
Preferably, the thickness of described P+ silicon is 100-500nm, and resistivity is 0.5-1 Ω .cm.
Preferably, step a) in, described silicon chip back side polishing adopts mass concentration to be the NaOH solution of 5-25%.
Preferably, step a) in, described silicon chip back side polishing adopts HNO3/HF solution, and its mass concentration is respectively 1-10% and 0.1-6%.
Preferably, step a) in, silicon chip back side reflectivity after described polished backside is 30-55%.
Preferably, in step c) in, described nano-silicon slurry comprises nano silicon particles and B compound.
Preferably, described nano silicon particles particle diameter is 1-40nm, B compound be B2H6, B2H6 is 0.1-5% in the mass content of described nano-silicon slurry.
Preferably, in step c) in, described nano-silicon electrode is 3 to 6, and each bar nano-silicon electrode is arranged parallel to each other, and nano-silicon electrode accounts for the 3-11% of silicon chip back side area.
Correspondingly, the present invention also provides a kind of selectivity making herbs into wool crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
The present invention has following beneficial effect: carry out polishing to silicon chip back side, strengthens the planarization of silicon chip back side, greatly can improve the contact performance of backplate and silicon chip, the contact resistance of backplate is declined, and forms excellent ohmic contact; The nano-silicon electrode of doping B compound forms P++ layer, and after quick high-temp sintering, B diffuses into rapidly silicon chip inside, and the area of silicon wafer under nano-silicon electrode forms B heavily doped region, forms P+ layer; Nano-silicon electrode, B heavy doping and P-type silicon substrate form P++/P+/P height knot; Excellent silicon chip back side planarization is conducive to Al back surface field and the silicon back side forms even P+/P height knot, has and while reduction backplate resistance, also can greatly reduce the Carrier recombination speed of silicon chip back side, the conversion efficiency of battery be promoted.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, with embodiment, the present invention is described in further detail below.
Embodiment one:
A preparation method for low surface recombination backplate solar cell, comprises the steps:
A) making herbs into wool, thermal diffusion p-n junction, silicon chip back side polishing and dephosphorization silex glass are carried out successively to silicon chip; Silicon chip back side polishing adopts mass concentration to be the NaOH solution of 5%, or adopts HNO3/HF solution, and its mass concentration is respectively 1%, and 0.1%;
B) carry out PECVD plated film at described front side of silicon wafer, form SiNx antireflective film;
C) at silicon chip back side printing nano-silicon slurry, nano-silicon electrode is formed; Described nano-silicon slurry comprises nano silicon particles and B compound, and nano silicon particles particle diameter is 1-40nm, B compound be B2H6, B2H6 is 0.1% in the mass content of described nano-silicon slurry.
D) silicon chip back side after nano-silicon electrode being carried out in the sintering furnace of 700 DEG C Fast Sintering under described nano-silicon electrode forms P+ silicon.
E) on nano-silicon electrode, Ag back electrode is prepared;
F) prepare Al at silicon chip back side and carry on the back electric field;
G) front side of silicon wafer prepares Ag positive electrode;
H) high temperature sintering is carried out to silicon chip and form solar cell.
The thickness of nano-silicon electrode is 1-5 μm, and resistivity is 0.01-0.5 Ω .cm; The thickness of P+ silicon is 100-500nm, and resistivity is 0.5-1 Ω .cm; Silicon chip back side reflectivity after described polished backside is 30-55%; Nano-silicon electrode is 3 to 6, and each bar nano-silicon electrode is arranged parallel to each other, and nano-silicon electrode accounts for the 3-11% of silicon chip back side area.
Embodiment two:
A preparation method for low surface recombination backplate solar cell, comprises the steps:
A) making herbs into wool, thermal diffusion p-n junction, silicon chip back side polishing and dephosphorization silex glass are carried out successively to silicon chip; Silicon chip back side polishing adopts mass concentration to be the NaOH solution of 15%, or adopts HNO3/HF solution, and its mass concentration is respectively 5% and 3%;
B) carry out PECVD plated film at described front side of silicon wafer, form SiNx antireflective film;
C) at silicon chip back side printing nano-silicon slurry, nano-silicon electrode is formed; Described nano-silicon slurry comprises nano silicon particles and B compound, and nano silicon particles particle diameter is 1-40nm, B compound be B2H6, B2H6 is 2% in the mass content of described nano-silicon slurry.
D) silicon chip back side after nano-silicon electrode being carried out in the sintering furnace of 770 DEG C Fast Sintering under described nano-silicon electrode forms P+ silicon.
E) on nano-silicon electrode, Ag back electrode is prepared;
F) prepare Al at silicon chip back side and carry on the back electric field;
G) front side of silicon wafer prepares Ag positive electrode;
H) high temperature sintering is carried out to silicon chip and form solar cell.
The thickness of nano-silicon electrode is 1-5 μm, and resistivity is 0.01-0.5 Ω .cm; The thickness of P+ silicon is 100-500nm, and resistivity is 0.5-1 Ω .cm; Silicon chip back side reflectivity after described polished backside is 30-55%; Nano-silicon electrode is 3 to 6, and each bar nano-silicon electrode is arranged parallel to each other, and nano-silicon electrode accounts for the 3-11% of silicon chip back side area.
Embodiment three:
A preparation method for low surface recombination backplate solar cell, comprises the steps:
A) making herbs into wool, thermal diffusion p-n junction, silicon chip back side polishing and dephosphorization silex glass are carried out successively to silicon chip; Silicon chip back side polishing adopts mass concentration to be the NaOH solution of 25%, or adopts HNO3/HF solution, and its mass concentration is respectively 10% and 6%;
B) carry out PECVD plated film at described front side of silicon wafer, form SiNx antireflective film;
C) at silicon chip back side printing nano-silicon slurry, nano-silicon electrode is formed; Described nano-silicon slurry comprises nano silicon particles and B compound, and nano silicon particles particle diameter is 1-40nm, B compound be B2H6, B2H6 is 5% in the mass content of described nano-silicon slurry.
D) silicon chip back side after nano-silicon electrode being carried out in the sintering furnace of 850 DEG C Fast Sintering under described nano-silicon electrode forms P+ silicon.
E) on nano-silicon electrode, Ag back electrode is prepared;
F) prepare Al at silicon chip back side and carry on the back electric field;
G) front side of silicon wafer prepares Ag positive electrode;
H) high temperature sintering is carried out to silicon chip and form solar cell.
The thickness of nano-silicon electrode is 1-5 μm, and resistivity is 0.01-0.5 Ω .cm; The thickness of P+ silicon is 100-500nm, and resistivity is 0.5-1 Ω .cm; Silicon chip back side reflectivity after described polished backside is 30-55%; Nano-silicon electrode is 3 to 6, and each bar nano-silicon electrode is arranged parallel to each other, and nano-silicon electrode accounts for the 3-11% of silicon chip back side area.
Correspondingly, the present invention also provides a kind of selectivity making herbs into wool crystal silicon solar batteries, and it is obtained by the preparation method of above-mentioned three kinds of embodiments.
The present invention has following beneficial effect: carry out polishing to silicon chip back side, strengthens the planarization of silicon chip back side, greatly can improve the contact performance of backplate and silicon chip, the contact resistance of backplate is declined, and forms excellent ohmic contact; The nano-silicon electrode of doping B compound forms P++ layer, and after quick high-temp sintering, B diffuses into rapidly silicon chip inside, and the area of silicon wafer under nano-silicon electrode forms B heavily doped region, forms P+ layer; Nano-silicon electrode, B heavy doping and P-type silicon substrate form P++/P+/P height knot; Excellent silicon chip back side planarization is conducive to Al back surface field and the silicon back side forms even P+/P height knot, has and while reduction backplate resistance, also can greatly reduce the Carrier recombination speed of silicon chip back side, the conversion efficiency of battery be promoted.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a preparation method for low surface recombination backplate solar cell, is characterized in that, comprise the following steps:
A) making herbs into wool, thermal diffusion p-n junction, silicon chip back side polishing and dephosphorization silex glass are carried out successively to silicon chip;
B) carry out PECVD plated film at described front side of silicon wafer, form SiNx antireflective film;
C) at silicon chip back side printing nano-silicon slurry, nano-silicon electrode is formed;
D) silicon chip back side after nano-silicon electrode being carried out in the sintering furnace of 700-850 DEG C Fast Sintering under described nano-silicon electrode forms P+ silicon.
E) on nano-silicon electrode, Ag back electrode is prepared;
F) prepare Al at silicon chip back side and carry on the back electric field;
G) front side of silicon wafer prepares Ag positive electrode;
H) high temperature sintering is carried out to silicon chip and form solar cell.
2. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, it is characterized in that, the thickness of described nano-silicon electrode is 1-5 μm, and resistivity is 0.01-0.5 Ω .cm.
3. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, it is characterized in that, the thickness of described P+ silicon is 100-500nm, and resistivity is 0.5-1 Ω .cm.
4. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, is characterized in that, step a) in, described silicon chip back side polishing adopts mass concentration to be the NaOH solution of 5-25%.
5. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, is characterized in that, step a) in, described silicon chip back side polishing adopts HNO3/HF solution, and its mass concentration is respectively 1-10% and 0.1-6%.
6. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, is characterized in that, step a) in, silicon chip back side reflectivity after described polished backside is 30-55%.
7. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, is characterized in that, in step c) in, described nano-silicon slurry comprises nano silicon particles and B compound.
8. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 7, is characterized in that, described nano silicon particles particle diameter is 1-40nm, B compound be B2H6, B2H6 is 0.1-5% in the mass content of described nano-silicon slurry.
9. the preparation method of a kind of low surface recombination backplate solar cell as claimed in claim 1, it is characterized in that, in step c) in, described nano-silicon electrode is 3 to 6, each bar nano-silicon electrode is arranged parallel to each other, and nano-silicon electrode accounts for the 3-11% of silicon chip back side area.
10. a low surface recombination backplate solar cell, is characterized in that, it is obtained by the preparation method described in any one of claim 1-9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010123735A1 (en) * | 2009-04-24 | 2010-10-28 | Nanosys, Inc. | Nanoparticle plasmon scattering layer for photovoltaic cells |
| CN103594550A (en) * | 2013-10-12 | 2014-02-19 | 南昌大学 | Preparation method of patterned doped crystalline silicone thin film for solar cell |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
| CN103855230A (en) * | 2014-03-19 | 2014-06-11 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing N-type back emitting electrode solar battery |
| EP2819179A1 (en) * | 2012-02-20 | 2014-12-31 | Korea University Research And Business Foundation | Multiple band gap tandem solar cell and method for forming same |
| CN104617164A (en) * | 2015-02-11 | 2015-05-13 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing solar cell with the same |
-
2015
- 2015-07-18 CN CN201510422789.4A patent/CN105023971A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010123735A1 (en) * | 2009-04-24 | 2010-10-28 | Nanosys, Inc. | Nanoparticle plasmon scattering layer for photovoltaic cells |
| EP2819179A1 (en) * | 2012-02-20 | 2014-12-31 | Korea University Research And Business Foundation | Multiple band gap tandem solar cell and method for forming same |
| CN103594550A (en) * | 2013-10-12 | 2014-02-19 | 南昌大学 | Preparation method of patterned doped crystalline silicone thin film for solar cell |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
| CN103855230A (en) * | 2014-03-19 | 2014-06-11 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing N-type back emitting electrode solar battery |
| CN104617164A (en) * | 2015-02-11 | 2015-05-13 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing solar cell with the same |
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Application publication date: 20151104 |