CN203491268U - Novel double-sensitive-surface solar battery - Google Patents
Novel double-sensitive-surface solar battery Download PDFInfo
- Publication number
- CN203491268U CN203491268U CN201320643131.2U CN201320643131U CN203491268U CN 203491268 U CN203491268 U CN 203491268U CN 201320643131 U CN201320643131 U CN 201320643131U CN 203491268 U CN203491268 U CN 203491268U
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- sensitive
- solar battery
- novel double
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002161 passivation Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000004718 Panda Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a novel double-sensitive-surface solar battery. The novel double-sensitive-surface solar battery includes a front surface electrode; a front surface reflection reducing layer; a front surface passivation layer; a PN node; a P type silicon substrate; and a rear surface passivation layer, a rear surface reflection reducing layer and a rear surface electrode which are disposed at a rear surface of the P type silicon substrate. With the novel double-sensitive-surface solar battery, preparing process of a double-surface battery in the prior art is reduced, and industrialization development is facilitated.
Description
Technical field
The utility model relates to a kind of solar cell, is specifically related to a kind of novel two-sided light solar cell that is subject to.
Background technology
At present, the day by day fierce and an urgent demand of market to high-quality photovoltaic product along with photovoltaic industry competition, improves solar cell transformation efficiency, becomes the top priority of solar battery technology development.Existing commercialization battery is most of for one side is subject to photocell, and its back side is used aluminium back surface field to carry out passivation, forms height electric field and improves battery open circuit voltage, forms dorsal light reflex face and improves electric current.But because the heavy doping efficiency of aluminium back surface field causes improved efficiency limited, thereby and back aluminium back surface field stop that injecting of light cannot fully generate electricity." Panda " battery of existing Ying Li group volume production also adopts the two-sided light technology that is subject to, but it adopts the positive phosphorus that expands, the method of boron is expanded at the back side, printed on both sides silver electrode is prepared the two-sided photocell that is subject to, this kind of double-side cell relates to two-sided dissimilar diffusion and multiple loaded down with trivial details operation, brings certain obstruction to the progress of industrialization.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of novel two-sided light solar cell that is subject to, and reduces existing double-side cell preparation section, is more conducive to the development of industrialization.
The technical scheme that the utility model technical solution problem adopts is: a kind of novel two-sided light solar cell that is subject to, comprise front electrode, front antireflection layer, front passivation layer, PN junction and P type silicon substrate, at the described P type silicon substrate back side, be also provided with backside passivation layer, back side antireflection layer and backplate.
As a kind of preferred, described front passivation layer and backside passivation layer are SiO
2or Al
2o
3, its thickness is between 5nm-30nm.
The utility model backside passivation layer and back side antireflection layer do not need to use laser to slot or perforate is processed, and directly use can penetrate passivation layer and the stacked electrode slurry of antireflective, forms contact after sintering.Its main technique is as follows: silicon substrate is gone to damage after making herbs into wool through common process, 850 ℃ of left and right, spread and prepare PN junction, square resistance is at the emitter of 80ohm/sqr left and right.Silicon chip after diffusion is carried out going surperficial PSG and edge isolation after polished backside.Use the method for thermal oxidation (or ald), at the SiO of the about 15nm of battery positive and negative growth one deck
2(or Al
2o
3), next at the silicon nitride film layer of cell backside deposition one deck 80nm left and right, at battery front side, deposit the silicon nitride anti-reflecting film layer of one deck 80nm.The silicon chip of double-sided coating is carried out to backplate printing and positive silver electrode printing, after sintering, complete the two-sided photocell that is subject to.
The beneficial effects of the utility model are: battery is carried out to passivation on double surfaces, improved the transformation efficiency of battery, when battery front side is subject to light, cell backside can be accepted diffusing from ground, and reduce existing double-side cell preparation section, be more conducive to the development of industrialization.
Accompanying drawing explanation
Fig. 1 is the institutional framework schematic diagram of the utility model embodiment.
Below in conjunction with accompanying drawing, the utility model is described further.
Embodiment
As shown in Figure 1, a kind of novel two-sided light solar cell that is subject to, comprises front electrode 1, front antireflection layer 2, front passivation layer 3, PN junction 4 and P type silicon substrate 5, at P type silicon substrate 5 back sides, is also provided with backside passivation layer 6, back side antireflection layer 7 and backplate 8.Front passivation layer 3 and backside passivation layer 6 are SiO
2, its thickness is 15nm.
Claims (2)
1. the novel two-sided light solar cell that is subject to, comprise front electrode (1), front antireflection layer (2), front passivation layer (3), PN junction (4) and P type silicon substrate (5), it is characterized in that: at described P type silicon substrate (5) back side, be also provided with backside passivation layer (6), back side antireflection layer (7) and backplate (8).
2. a kind of novel two-sided light solar cell that is subject to as claimed in claim 1, is characterized in that: described front passivation layer (3) and backside passivation layer (6) are SiO
2or Al
2o
3, its thickness is between 5nm-30nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320643131.2U CN203491268U (en) | 2013-10-18 | 2013-10-18 | Novel double-sensitive-surface solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320643131.2U CN203491268U (en) | 2013-10-18 | 2013-10-18 | Novel double-sensitive-surface solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203491268U true CN203491268U (en) | 2014-03-19 |
Family
ID=50262076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320643131.2U Expired - Lifetime CN203491268U (en) | 2013-10-18 | 2013-10-18 | Novel double-sensitive-surface solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203491268U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618007A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Novel double-sided light receiving solar cell |
| CN106876492A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
| CN109360869A (en) * | 2018-11-23 | 2019-02-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of low cost black silicon solar cell production method |
-
2013
- 2013-10-18 CN CN201320643131.2U patent/CN203491268U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618007A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Novel double-sided light receiving solar cell |
| CN106876492A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
| CN106876492B (en) * | 2017-03-24 | 2018-07-24 | 隆基乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
| CN109360869A (en) * | 2018-11-23 | 2019-02-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of low cost black silicon solar cell production method |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140319 |