CN202948936U - Aluminum back field-free back passivation type solar crystal silicon cell - Google Patents
Aluminum back field-free back passivation type solar crystal silicon cell Download PDFInfo
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- CN202948936U CN202948936U CN2012204020335U CN201220402033U CN202948936U CN 202948936 U CN202948936 U CN 202948936U CN 2012204020335 U CN2012204020335 U CN 2012204020335U CN 201220402033 U CN201220402033 U CN 201220402033U CN 202948936 U CN202948936 U CN 202948936U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
Provided by the utility model is an aluminum back field-free back passivation type solar crystal silicon cell that comprises front-side electrode main grids, front-side electrode fine grids, a front-side anti-reflection membrane and a P type silicon chip with a PN junction. A back-side passivation layer is arranged at the back of the silicon chip; back-side electrode main grids and back-side electrode fine grids are printed on and penetrate the back-side passivation layer to realize metal connection and conduction with the back side of the silicon chip. According to the utility model, the conversion efficiency of the cell can be substantially improved; application to a thin silicon chip can be realized; the utilization of equipment with aluminum back field printing and sintering can be reduced; and investment on laser equipment can also be reduced.
Description
Technical field
The invention belongs to the solar energy power generating field, relate in particular to a kind of high efficiency solar energy crystal silicon battery structure.
Background technology
Solar energy resources is abundant, widely distributed, is the most potential regenerative resource.Along with the problems such as global energy shortage and environmental pollution become increasingly conspicuous, solar energy power generating is because of its cleaning, safety, facility, the characteristics such as efficient, the new industry that has become the countries in the world common concern and given priority to.
The backplate that conventional solar energy crystal silicon battery is used by front electrode main grid, the thin grid of front electrode, antireflective film, the silicon chip with PN junction, aluminium back surface field, welding welding etc. forms, silicon chip back of the body surface directly contacts with aluminum metal, contact interface recombination rate between silicon and aluminum metal is high, efficiency of solar cell is significantly reduced, and the structure of full aluminium back surface field is not suitable for the crystal silicon solar battery of sheet.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of back of the body passivation solar energy crystal silicon battery without the aluminium back surface field, greatly improve the conversion efficiency of battery.
The technical solution adopted for the present invention to solve the technical problems is: comprise front electrode main grid, the thin grid of front electrode, front antireflective film and with the P type silicon chip of PN junction, silicon chip back side has backside passivation layer, the thin grid of printed back electrode main grid and backplate on backside passivation layer, the thin grid of backplate main grid and backplate penetrate backside passivation layer, realize that with silicon chip back side metal is connected conducting.
Described silicon chip back side makes silicon chip back side become more smooth through back of the body glossing.
Described backside passivation layer can be the single layer dielectric passivating film, is any one in silicon dioxide film, di-aluminium trioxide film, silicon nitride film, and thickness is 30 ~ 100nm.
Described backside passivation layer can be double-layer electric medium passivating film, and nexine passivated dielectric medium film is a kind of in silicon dioxide film and di-aluminium trioxide film, and thickness is 5 ~ 20nm, and outer passivated dielectric medium film is silicon nitride film, and thickness is 20 ~ 150nm.
Described backplate main grid is segmentation center engraved structure, and backplate main grid slurry is silver slurry or silver-colored aluminium paste.
The thin grid slurry of described backplate is silver-colored aluminium paste.
The invention has the beneficial effects as follows: carry on the back the passivated dielectric medium film by use, reduced the contact interface recombination rate between silicon and aluminum metal, improve the electric property of battery, thereby greatly improve the conversion efficiency of battery, battery conversion efficiency can improve 0.4 ~ 1.0%.The present invention does not need to use the aluminium back surface field, can be used for thinner silicon chip.Because the back electrode structure of cell piece is the same with electrode structure at right side, the present invention can reduce the equipment with the printing of aluminium back surface field and sintering, thereby reduces investment in fixed assets.With compare with the back of the body passivation cell of laser ablation medium passivating film, can reduce the input of laser equipment.
Description of drawings
Fig. 1 is that backside passivation layer is the battery structure schematic diagram of single-layer medium passivating film.
Fig. 2 is that backside passivation layer is the battery structure schematic diagram of two-layered medium passivating film.
In figure, 1-front electrode main grid, the thin grid of 2-front electrode, the 3-cell piece is positive, 4-antireflective film, 5-be with the P type silicon chip of PN junction, 6-single layer dielectric passivating film, the 7-cell piece back side, the thin grid of 8-backplate, 9-backplate main grid, 10-nexine passivated dielectric medium film, the outer passivated dielectric medium film of 11-.
Embodiment
A kind of back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field, formed by front electrode main grid, the thin grid of front electrode, front antireflective film, P type silicon chip, backside passivation layer, backplate main grid, the thin grid of backplate etc. with PN junction, silicon chip back side has backside passivation layer, overleaf on passivation layer by silk screen printing backplate main grid and the thin grid of backplate, the thin grid of backplate main grid and backplate penetrate backside passivation layer by sintering process, realize that with silicon chip back side metal is connected conducting.
Described silicon chip back side makes silicon chip back side become more smooth through back of the body glossing.
Described backside passivation layer can be the single layer dielectric passivating film, is a kind of in silicon dioxide film, di-aluminium trioxide film, silicon nitride film, and thickness is 30 ~ 100nm.
Described backside passivation layer can be double-layer electric medium passivating film, and nexine passivated dielectric medium film is a kind of in silicon dioxide film and di-aluminium trioxide film, and thickness is 5 ~ 20nm, and outer passivated dielectric medium film is silicon nitride film, and thickness is 20 ~ 150nm.
Described backplate main grid is segmentation center engraved structure, and backplate main grid slurry is silver slurry or silver-colored aluminium paste.
The thin grid slurry of described backplate is silver-colored aluminium paste.
The present invention is further described below in conjunction with drawings and Examples.
Back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field provided by the invention, by front electrode main grid 1, the thin grid 2 of front electrode, front antireflective film 4, form with the thin grid 8 of P type silicon chip 5, backside passivation layer, backplate of PN junction, backplate main grid 9 etc., be the back portion of cell piece with existing solar energy crystal silicon battery structure difference, the below is explained for example.
Example 1
A kind of back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field provided by the invention, as shown in Figure 1, by front electrode main grid 1, the thin grid 2 of front electrode, front antireflective film 4, form with the thin grid 8 of P type silicon chip 5, backside passivation layer, backplate of PN junction, backplate main grid 9 etc.Be that with existing solar energy crystal silicon battery structure difference backside passivation layer is arranged on silicon chip back side, backside passivation layer is single layer dielectric passivating film 6, the thin grid 8 of silk screen printing backplate and backplate main grid 9 on single layer dielectric passivating film 6, the thin grid 8 of backplate and backplate main grid 9 penetrate single layer dielectric passivating film 6 by sintering process, realize that with silicon chip back side metal is connected conducting.
The manufacturing process of a kind of back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field provided by the invention is as follows, making herbs into wool--cleans--diffusion--etching--polishing--back side single layer dielectric passivating film--front antireflective film--printing front electrode--printed back electrode--sintering.Above-mentioned technique is finished to optional technique, and the order of polishing can be before diffusion technology, also can be after diffusion technology.Back side single layer dielectric passivating film 6 can exchange with the process sequence of front antireflective film 5, and the order of printing front electrode and printed back electrode also can be exchanged.
Described backside passivation layer is single layer dielectric passivating film 6, is a kind of in silicon dioxide film, di-aluminium trioxide film, silicon nitride film, and thickness is 30 ~ 100nm.Described silicon dioxide film can prepare by methods such as thermal oxidation, discharge oxidation, plasma reinforced chemical vapour depositions.Described di-aluminium trioxide film can pass through the method preparations such as plasma reinforced chemical vapour deposition, ald.Described silicon nitride film can be by the preparation of plasma reinforced chemical vapour deposition method.
Described backplate main grid 9 is segmentation center engraved structure.
A kind of back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field provided by the invention, as shown in Figure 2, by positive electrode main grid 1, positive-electrode fine grid 2, front antireflective film 4, form with the thin grid 8 of P type silicon chip 5, backside passivation layer, backplate of PN junction, backplate main grid 9 etc.Be that with existing solar energy crystal silicon battery structure difference backside passivation layer is arranged on silicon chip back side, backside passivation layer is double-layer electric medium passivating film, formed by nexine passivated dielectric medium film 10 and outer passivated dielectric medium film 11, the thin grid 8 of silk screen printing backplate and backplate main grid 9 on outer passivated dielectric medium film 11, the thin grid 8 of backplate and backplate main grid 9 penetrate nexine passivated dielectric medium film 10 and outer passivated dielectric medium film 11 by sintering process, realize that with silicon chip back side metal is connected conducting.
The manufacturing process of a kind of back of the body passivation solar energy crystal silicon battery structure without the aluminium back surface field provided by the invention is as follows, making herbs into wool--cleans--diffusion--etching--polishing--back side double-layer electric medium passivating film nexine--back side double-layer electric medium passivating film is outer--front antireflective film--printing front electrode--printed back electrode--sintering.Above-mentioned technique is finished to optional technique, and the order of polishing can be before diffusion technology, also can be after diffusion technology.The technique of front antireflective film 5 is placed on layer passivated dielectric medium film 10 or outer passivated dielectric medium film 11 preparation technologies' front.The order of printing front electrode and printed back electrode also can be exchanged.
Described backside passivation layer is double-layer electric medium passivating film, formed by nexine passivated dielectric medium film 10 and outer passivated dielectric medium film 11, nexine passivated dielectric medium film 10 is a kind of in silicon dioxide film and di-aluminium trioxide film, thickness is 5 ~ 20nm, outer passivated dielectric medium film 11 is silicon nitride film, and thickness is 20 ~ 100nm.Described silicon dioxide film can prepare by methods such as thermal oxidation, discharge oxidation, plasma reinforced chemical vapour depositions.Described di-aluminium trioxide film can pass through the method preparations such as plasma reinforced chemical vapour deposition, ald.Described silicon nitride film can be by the preparation of plasma reinforced chemical vapour deposition method.
Described backplate main grid 9 is segmentation center engraved structure, and the slurry of backplate main grid 9 be that silver is starched or silver-colored aluminium paste.
The slurry of the thin grid 8 of described backplate is silver-colored aluminium paste.
The present invention not only is confined to above-mentioned embodiment; persons skilled in the art are according to content disclosed by the invention; can adopt other multiple embodiment to implement the present invention; therefore; every employing project organization of the present invention and thinking; do some simple designs that change or change, all fall into the scope of protection of the invention.
Claims (6)
1. back of the body passivation solar energy crystal silicon battery without the aluminium back surface field, comprise front electrode main grid, the thin grid of front electrode, front antireflective film and with the P type silicon chip of PN junction, it is characterized in that: silicon chip back side has backside passivation layer, the thin grid of printed back electrode main grid and backplate on backside passivation layer, the thin grid of backplate main grid and backplate penetrate backside passivation layer, realize that with silicon chip back side metal is connected conducting.
2. the back of the body passivation solar energy crystal silicon battery without the aluminium back surface field according to claim 1, is characterized in that: described silicon chip back side polishing.
3. the back of the body passivation solar energy crystal silicon battery without the aluminium back surface field according to claim 1, it is characterized in that: described backside passivation layer is the single layer dielectric passivating film, be any one in silicon dioxide film, di-aluminium trioxide film, silicon nitride film, thickness is 30 ~ 100nm.
4. the back of the body passivation solar energy crystal silicon battery without the aluminium back surface field according to claim 1, it is characterized in that: described backside passivation layer is double-layer electric medium passivating film, nexine passivated dielectric medium film is a kind of in silicon dioxide film and di-aluminium trioxide film, thickness is 5 ~ 20nm, outer passivated dielectric medium film is silicon nitride film, and thickness is 20 ~ 150nm.
5. the back of the body passivation solar energy crystal silicon battery without the aluminium back surface field according to claim 1 is characterized in that: described backplate main grid is segmentation center engraved structure, and backplate main grid slurry is silver slurry or silver-colored aluminium paste.
6. the back of the body passivation solar energy crystal silicon battery without the aluminium back surface field according to claim 1, it is characterized in that: the thin grid slurry of described backplate is silver-colored aluminium paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204020335U CN202948936U (en) | 2012-08-14 | 2012-08-14 | Aluminum back field-free back passivation type solar crystal silicon cell |
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| CN2012204020335U CN202948936U (en) | 2012-08-14 | 2012-08-14 | Aluminum back field-free back passivation type solar crystal silicon cell |
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| CN202948936U true CN202948936U (en) | 2013-05-22 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206213A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Solar battery and manufacturing method therefor |
| CN104505406A (en) * | 2014-12-29 | 2015-04-08 | 苏州强明光电有限公司 | GaAs double-faced thin-film solar cell |
| CN106981525A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | P-type double-sided solar battery and preparation method thereof |
-
2012
- 2012-08-14 CN CN2012204020335U patent/CN202948936U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206213A1 (en) * | 2013-06-26 | 2014-12-31 | 英利集团有限公司 | Solar battery and manufacturing method therefor |
| CN104505406A (en) * | 2014-12-29 | 2015-04-08 | 苏州强明光电有限公司 | GaAs double-faced thin-film solar cell |
| CN104505406B (en) * | 2014-12-29 | 2017-08-25 | 苏州强明光电有限公司 | A kind of GaAs two-side film membranes solar cell |
| CN106981525A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | P-type double-sided solar battery and preparation method thereof |
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Granted publication date: 20130522 Termination date: 20210814 |
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| CF01 | Termination of patent right due to non-payment of annual fee |