CN105004457B - The monocrystalline-silicon pressure transducer chip of service behaviour can be improved - Google Patents
The monocrystalline-silicon pressure transducer chip of service behaviour can be improved Download PDFInfo
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- CN105004457B CN105004457B CN201510421947.4A CN201510421947A CN105004457B CN 105004457 B CN105004457 B CN 105004457B CN 201510421947 A CN201510421947 A CN 201510421947A CN 105004457 B CN105004457 B CN 105004457B
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Abstract
Improve the monocrystalline-silicon pressure transducer chip of service behaviour the invention discloses a kind of, it includes substrate, and substrate is provided with monocrystalline silicon layer；The monocrystalline silicon layer is by the monocrystalline silicon thin film that is arranged on above substrate, and the vacuum chamber formed between monocrystalline silicon thin film and substrate is constituted.Section on the vertical direction of the vacuum chamber at an arbitrary position is trapezium structure, and arc linkage section is provided between the side end face and upper surface of vacuum chamber；The monocrystalline-silicon pressure transducer chip of service behaviour is improved using above-mentioned technical proposal, it can pass through the arc linkage section in vacuum chamber, so that above-mentioned monocrystalline-silicon pressure transducer chip internal formation arc angle trapezium structure, so that the anti-overvoltage capabilities of sensor chip are improved, to cause under equal amount journey, the over-pressed performance of sensor chip in a high voltage state has compared with conventional die to be significantly improved.
Description
Technical field
It is especially a kind of to improve the monocrystalline-silicon pressure transducer chip of service behaviour the present invention relates to semiconductor applications.
Background technology
Pressure sensor has turned into the essential electronics member of the numerous areas such as industrial production, smart home, environmental protection
One of device, and in pressure sensor, the chip of pressure sensor directly determines the service behaviour of pressure sensor.It is existing
Pressure sensor chip generally by measuring influence of the pressure to the resistance in chip and then realizing the detection of pressure, but
Existing chip structure is difficult to the work requirements for meeting extreme environment, i.e., its over-pressed performance is unsatisfactory.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of monocrystalline-silicon pressure transducer chip, it can significantly improve sensing
The over-pressed characteristic and Static compression performance of device chip.
In order to solve the above technical problems, improving the monocrystalline-silicon pressure transducer core of service behaviour the present invention relates to a kind of
Piece, it includes substrate, and substrate is provided with monocrystalline silicon layer；The monocrystalline silicon layer is thin by being arranged on monocrystalline silicon above substrate
Film, and the vacuum chamber formed between monocrystalline silicon thin film and substrate are constituted.The vertical direction of the vacuum chamber at an arbitrary position
On section be trapezium structure, be provided with arc linkage section between the side end face and upper surface of vacuum chamber.
As a modification of the present invention, the upper surface of the monocrystalline silicon thin film is provided with including the first piezo-resistance,
Wheatstone bridge including two piezo-resistances, the 3rd piezo-resistance and the 4th piezo-resistance；Multiple piezo-resistances include
Pressure-sensitive end, and two connection ends extended by pressure-sensitive end；By being connected to the gold of connection end between multiple piezo-resistances
Category lead is attached each other, first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance
Center on monocrystalline silicon thin film is into rotationally symmetrical.
Using above-mentioned design, it can be by the rotation symmetric design between multiple piezo-resistances so that its favour constituted
The symmetry of distribution of resistance in stone electric bridge is improved, so that effective resistance of Wheatstone bridge is raised, enters
And the stability of monocrystalline-silicon pressure transducer chip is improved with static pressure performance.
As a modification of the present invention, in the monocrystalline silicon thin film, the first piezo-resistance, the second piezo-resistance, the 3rd
The pressure-sensitive end of piezo-resistance and the 4th piezo-resistance is set in turn in the end Angle Position of monocrystalline silicon thin film upper surface, each pressure
The bearing of trend of two connection ends in quick resistance is each parallel to the diagonal of monocrystalline silicon thin film, and it is towards monocrystalline silicon thin film
Central area extension.Using above-mentioned design, it can be by the structure setting of the connection end in multiple piezo-resistances so that its
Realization be mutually symmetrical design while so that multiple piezo-resistances monocrystalline silicon thin film upper surface formed X-shaped mirrored arrangement,
So that resistance is able to further improve relative to the symmetry of monocrystalline silicon thin film, so that monocrystalline-silicon pressure transducer
The stability of chip can also be improved with static pressure performance.
As a modification of the present invention, by being respectively connecting to above-mentioned two between the adjacent piezo-resistance of any two
Metal lead wire between piezo-resistance connection end adjacent to each other is connected, and it causes the connecting line between multiple piezo-resistances
Road also meets its symmetric configuration, and connection line is simplified, to cause the working stability performance of sensor chip to be able to
Lifting.
The monocrystalline-silicon pressure transducer chip of service behaviour is improved using above-mentioned technical proposal, it can pass through vacuum chamber
In arc linkage section so that above-mentioned monocrystalline-silicon pressure transducer chip internal formation arc angle trapezium structure so that sensing
The anti-overvoltage capabilities of device chip are improved, to cause under equal amount journey, the over-pressed performance of sensor chip in a high voltage state
Have compared with conventional die and significantly improve.
Brief description of the drawings
Fig. 1 is schematic diagram of the present invention；
Fig. 2 is Wheatstone bridge schematic diagram in the present invention；
Reference numerals list：
1-substrate, 2-monocrystalline silicon thin film, 3-vacuum chamber, 4-arc linkage section, the 51-the first piezo-resistance, 52-the
Two piezo-resistances, the 53-the three piezo-resistance, the 54-the four piezo-resistance, 6-pressure-sensitive end, 7-connection end, 8-metal lead wire.
Embodiment
With reference to embodiment, the present invention is furture elucidated, it should be understood that following embodiments are only used for
The bright present invention rather than limitation the scope of the present invention.It should be noted that the word "front", "rear" used below in description,
"left", "right", "up" and "down" refer to the direction in accompanying drawing, and word " interior " and " outer " are referred respectively to towards or away from specific
The direction at component geometry center.
Embodiment 1
As shown in Figure 1 a kind of improves the monocrystalline-silicon pressure transducer chip of service behaviour, and it includes substrate 1, lining
Monocrystalline silicon layer is provided with bottom；The monocrystalline silicon layer is and thin in monocrystalline silicon by the monocrystalline silicon thin film 2 that is arranged on above substrate
The vacuum chamber 3 formed between film 2 and substrate 1 is constituted.Section on the vertical direction of the vacuum chamber 3 at an arbitrary position is ladder
Shape structure, arc linkage section 4 is provided between the side end face and upper surface of vacuum chamber 3.
As a modification of the present invention, as shown in Fig. 2 the upper surface of the monocrystalline silicon thin film 2 is provided with including first
Wheatstone bridge including piezo-resistance 51, the second piezo-resistance 52, the 3rd piezo-resistance 53 and the 4th piezo-resistance 54；It is many
Individual piezo-resistance includes pressure-sensitive end 6, and two connection ends 7 extended by pressure-sensitive end 6；Between multiple piezo-resistances
It is attached each other by the metal lead wire 8 for being connected to connection end 7, first piezo-resistance 51, the second piezo-resistance 52,
Three piezo-resistances 53 and the 4th piezo-resistance 54 on monocrystalline silicon thin film 2 center into rotationally symmetrical.
Using above-mentioned design, it can be by the rotation symmetric design between multiple piezo-resistances so that its favour constituted
The symmetry of distribution of resistance in stone electric bridge is improved, so that effective resistance of Wheatstone bridge is raised, enters
And the stability of monocrystalline-silicon pressure transducer chip is improved with static pressure performance.
The monocrystalline-silicon pressure transducer chip of service behaviour is improved using above-mentioned technical proposal, it can pass through vacuum chamber
In arc linkage section so that above-mentioned monocrystalline-silicon pressure transducer chip internal formation arc angle trapezium structure so that sensing
The anti-overvoltage capabilities of device chip are improved, to cause under equal amount journey, the over-pressed performance of sensor chip in a high voltage state
Have compared with conventional die and significantly improve.
Embodiment 2
As a modification of the present invention, in the monocrystalline silicon thin film 2, the first piezo-resistance 51, the second piezo-resistance 52,
The pressure-sensitive end 6 of 3rd piezo-resistance 53 and the 4th piezo-resistance 54 is set in turn in the end angle position of the upper surface of monocrystalline silicon thin film 2
Put, the bearing of trend of two in each piezo-resistance connection end 7 is each parallel to the diagonal of monocrystalline silicon thin film 2, and its is equal
Extend towards the central area of monocrystalline silicon thin film 2.Using above-mentioned design, it can be by the knot of the connection end in multiple piezo-resistances
Structure is set so that it is while realization is mutually symmetrical design so that multiple piezo-resistances are formed in monocrystalline silicon thin film upper surface
The mirrored arrangement of X-shaped, so that resistance is able to further improve relative to the symmetry of monocrystalline silicon thin film, so that
The stability of monocrystalline-silicon pressure transducer chip can also be improved with static pressure performance.
Remaining feature of the present embodiment and advantage are same as Example 1.
Embodiment 3
As a modification of the present invention, by being respectively connecting to above-mentioned two between the adjacent piezo-resistance of any two
Metal lead wire 8 between piezo-resistance connection end 7 adjacent to each other is connected, and it causes the connection between multiple piezo-resistances
Circuit also meets its symmetric configuration, and connection line is simplified, to cause the working stability performance of sensor chip to obtain
To be lifted.
Remaining feature of the present embodiment and advantage are same as Example 2.
Claims (1)
1. a kind of improve the monocrystalline-silicon pressure transducer chip of service behaviour, it includes substrate, and substrate is provided with list
Crystal silicon layer；The monocrystalline silicon layer is by the monocrystalline silicon thin film that is arranged on above substrate, and the shape between monocrystalline silicon thin film and substrate
Into vacuum chamber constitute；Characterized in that, the section on the vertical direction of the vacuum chamber at an arbitrary position is trapezium structure,
Arc linkage section is provided between the side end face and upper surface of vacuum chamber, the upper surface of the monocrystalline silicon thin film is provided with including
Wheatstone bridge including one piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance；
Multiple piezo-resistances include pressure-sensitive end, and two connection ends extended by pressure-sensitive end；Multiple piezo-resistances
Between be attached each other by being connected to the metal lead wire of connection end, first piezo-resistance, the second piezo-resistance, the 3rd
Piezo-resistance and the 4th piezo-resistance on monocrystalline silicon thin film center into rotationally symmetrical, in the monocrystalline silicon thin film,
First piezo-resistance, the second piezo-resistance, the pressure-sensitive end of the 3rd piezo-resistance and the 4th piezo-resistance are set in turn in monocrystalline
The end Angle Position of silicon thin film upper surface so that four piezo-resistances form the mirrored arrangement of X-shaped in monocrystalline silicon thin film upper surface,
The bearing of trend of two connection ends in each piezo-resistance is each parallel to the diagonal of monocrystalline silicon thin film, and it is towards single
By being respectively connecting to the pressure-sensitive electricity of above-mentioned two between the central area extension of polycrystal silicon film, the adjacent piezo-resistance of any two
Metal lead wire between resistance connection end adjacent to each other is connected.
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| CN201510421947.4A CN105004457B (en) | 2015-07-19 | 2015-07-19 | The monocrystalline-silicon pressure transducer chip of service behaviour can be improved |
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| CN201510421947.4A CN105004457B (en) | 2015-07-19 | 2015-07-19 | The monocrystalline-silicon pressure transducer chip of service behaviour can be improved |
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| CN105004457B true CN105004457B (en) | 2017-10-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105547533A (en) * | 2015-12-09 | 2016-05-04 | 北京大学 | Pressure gauge chip structure and preparation method thereof |
| CN105928587A (en) * | 2016-06-25 | 2016-09-07 | 苏州赛智达智能科技有限公司 | High-precision digital liquid level meter |
| CN107045775A (en) * | 2017-01-10 | 2017-08-15 | 成都体育学院 | A kind of sensor and signal acquiring processing system of free combat electronics protector |
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| CN1049718A (en) * | 1989-08-25 | 1991-03-06 | 株式会社长野计器制作所 | Strain test element and use its pressure converter |
| CN101034021A (en) * | 2007-03-02 | 2007-09-12 | 清华大学 | Wide stress area silicon pressure sensor |
| CN101776501A (en) * | 2010-01-28 | 2010-07-14 | 无锡市纳微电子有限公司 | MEMS presser sensor chip and manufacturing method thereof |
| CN202267554U (en) * | 2011-10-20 | 2012-06-06 | 刘胜 | Silicon piezoresistive type pressure sensor chip with shielding layer |
| CN103443605A (en) * | 2011-02-25 | 2013-12-11 | 大陆汽车***公司 | Robust design of high pressure sensor device |
| CN203519215U (en) * | 2013-09-16 | 2014-04-02 | 沈阳仪表科学研究院有限公司 | High power overload 1KPa silicon micropressure sensor chip composition |
| CN104697701A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Piezoresistive pressure sensor |
| CN204831655U (en) * | 2015-07-19 | 2015-12-02 | 江苏德尔森传感器科技有限公司 | Can improve monocrystalline silicon pressure sensor chip of working property |
-
2015
- 2015-07-19 CN CN201510421947.4A patent/CN105004457B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049718A (en) * | 1989-08-25 | 1991-03-06 | 株式会社长野计器制作所 | Strain test element and use its pressure converter |
| CN101034021A (en) * | 2007-03-02 | 2007-09-12 | 清华大学 | Wide stress area silicon pressure sensor |
| CN101776501A (en) * | 2010-01-28 | 2010-07-14 | 无锡市纳微电子有限公司 | MEMS presser sensor chip and manufacturing method thereof |
| CN103443605A (en) * | 2011-02-25 | 2013-12-11 | 大陆汽车***公司 | Robust design of high pressure sensor device |
| CN202267554U (en) * | 2011-10-20 | 2012-06-06 | 刘胜 | Silicon piezoresistive type pressure sensor chip with shielding layer |
| CN203519215U (en) * | 2013-09-16 | 2014-04-02 | 沈阳仪表科学研究院有限公司 | High power overload 1KPa silicon micropressure sensor chip composition |
| CN104697701A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Piezoresistive pressure sensor |
| CN204831655U (en) * | 2015-07-19 | 2015-12-02 | 江苏德尔森传感器科技有限公司 | Can improve monocrystalline silicon pressure sensor chip of working property |
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Effective date of registration: 20160222 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Applicant before: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare |
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Effective date of registration: 20160323 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Applicant after: Chongqing Adelson Sensor Technology Co., Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant before: Mou Heng |
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Effective date of registration: 20210414 Address after: 210000 Zhongguancun Software Park, 7 Yingcui Road, Jiangjun Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province Patentee after: JIANGSU DER SENSOR HOLDINGS Ltd. Address before: 400714 no.5-317, Yunhan Avenue, Shuitu hi tech Industrial Park, Beibei District, Chongqing Patentee before: Chongqing Adelson Sensor Technology Co.,Ltd. |