CN104458076B - A kind of micropressure sensor with the low acceleration noise of high overload - Google Patents
A kind of micropressure sensor with the low acceleration noise of high overload Download PDFInfo
- Publication number
- CN104458076B CN104458076B CN201410704912.7A CN201410704912A CN104458076B CN 104458076 B CN104458076 B CN 104458076B CN 201410704912 A CN201410704912 A CN 201410704912A CN 104458076 B CN104458076 B CN 104458076B
- Authority
- CN
- China
- Prior art keywords
- siliceous substrate
- boron glass
- siliceous
- back side
- boss structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
nullA kind of micropressure sensor with the low acceleration noise of high overload，Including siliceous substrate，It is provided with cavity in the middle part of the back side of siliceous substrate，The back side of siliceous substrate is bonded with boron glass，The middle part of boron glass has boss structure，The backside cavity of siliceous substrate matches with the boss structure of boron glass，Front etch at siliceous substrate forms orthogonal first beam and the second beam，Shape form flat film is corroded at the back side of siliceous substrate，The beam of the first beam and the second beam and siliceous substrate surrounding is collectively forming beam diaphragm structure，The two ends of the first beam and the second beam are disposed with varistor along [100] crystal orientation at stress maximum，Four varistors are connected with each other composition Wheatstone bridge by metal lead wire and pad，Have employed the boss structure of boron glass，Spacing design is more reasonable，While meeting high sensitivity and high linearity requirement，Have high overload and the characteristic of high lateral effect resistivity concurrently.
Description
Technical field
The present invention relates to micro-pressure sensor chip technical field, have particularly to one and exceed
Carry the micropressure sensor of low acceleration noise.
Background technology
Pressure transducer was one of most widely used sensor, as far back as twentieth century 50 or six ten years
Correlational study for pressure transducer just has begun to, along with the development of MEMS technology,
Micropressure sensor becomes widest microsensor product in current merchandized handling, represents
The most ripe MEMS technology device.
Pressure resistance type micropressure sensor is use that semi-conducting material and MEMS technology manufacture new
Type pressure transducer.Compare with conventional pressure sensor, micropressure sensor have precision high,
The advantage such as highly sensitive, dynamic characteristic good, volume is little, low cost, signal processing circuit are simple.
Traditional pressure resistance type micropressure sensor is generally flat membrane structure, island membrane structure and beam film knot
Structure.Flat membrane structure is highly sensitive, but non-linear greatly, and transship relatively low；Island membrane structure overload energy
Power is big, but sensitivity is low, is affected the biggest by lateral acceleration；Beam diaphragm structure is highly sensitive, non-
The least, but overload capacity is poor.Some are had to promote based on these architectural characteristics the most recently
In achievement in research, such as film, rood beam intersects, and makes stress beam structure that stress concentrates and is answering
Add island structure on the basis of power beam thus improve the beam film island structure of overload.Stress beam structure can be
Reducing non-linear while improving sensitivity, beam film island structure can improve overload capacity further.
Although these achievements in research are very effective, but these additional operations can cause anti-interference to reduce,
The appearance of the problems such as cost raising and processing difficulties.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, it is an object of the invention to provide one and have
The micropressure sensor of the low acceleration noise of high overload, is meeting high sensitivity and high linearity
While requirement, have high overload and the characteristic of high lateral effect resistivity concurrently.
To achieve these goals, the technical solution used in the present invention is:
A kind of micropressure sensor with the low acceleration noise of high overload, including siliceous substrate 1,
Being provided with cavity in the middle part of the back side of siliceous substrate 1, the back side of siliceous substrate 1 is bonded with boron glass 2,
And leave bonding surplus, the middle part of boron glass 2 is provided with boss structure 8, and boss structure 8 is gone to the bottom
Center, face overlaps with boron glass 2 upper bottom surface center, the backside cavity of siliceous substrate 1
Match with the boss structure 8 of boron glass 2, and be reserved with the working clearance, at siliceous substrate 1
Front etch form orthogonal first beam 6 and the second beam 7, at the back of the body of siliceous substrate 1
Face corrosion shape form flat film 9, the first beam 6 and the second beam 7 are common with the beam of siliceous substrate 1 surrounding
Form beam diaphragm structure.
The first described beam 6 and the two ends of the second beam 7 are maximum at stress along [100] crystal orientation
Place is disposed with varistor 3, and four varistors 3 are the single pressure drag bar of 2-4 folding, and four
Individual varistor 3 is connected with each other composition Wheatstone bridge by metal lead wire 4 and pad 5.
Owing to present invention employs the boss structure 8 of boron glass 2, adopt on traditional design method
Doing spacing comparing with mass, spacing design is more reasonable, and improves the anti-interference of sensor
Ability.Especially ensure that micropressure sensor high sensitivity and the premise of high linearity requirement
Under, it is possible to effectively reducing sensor chip is affected by lateral effect so that the present invention has
The characteristic of high lateral effect resistivity.
Accompanying drawing explanation
Fig. 1 is the overall structure front schematic view of the present invention.
Fig. 2 is the bonding schematic diagram of the present invention.
Fig. 3 is the schematic diagram of glass boss 8 of the present invention.
Fig. 4 is the arrangement schematic diagram of varistor 3 on inventive sensor beam.
Detailed description of the invention
Below in conjunction with accompanying drawing, chip of the present invention is described in more detail.
With reference to Fig. 1, Fig. 2 and Fig. 3, a kind of micro-pressure with the low acceleration noise of high overload
Sensor, including siliceous substrate 1, is provided with cavity, siliceous base in the middle part of the back side of siliceous substrate 1
The back side at the end 1 is bonded with boron glass 2, and leaves bonding surplus, and the middle part of boron glass 2 is provided with
Boss structure 8, boss structure 8 bottom surface center and boron glass 2 upper bottom surface center
Overlapping, the backside cavity of siliceous substrate 1 matches with the boss structure 8 of boron glass 2, and in advance
Leaving the working clearance, the front etch at siliceous substrate 1 forms orthogonal first beam 6 He
Second beam 7, corrodes shape form flat film 9, the first beam 6 and the second beam at the back side of siliceous substrate 1
7 are collectively forming beam diaphragm structure, the cavity of siliceous substrate 1 and boron with the beam of siliceous substrate 1 surrounding
It is reserved with the working clearance, to ensure that beam diaphragm structure is at sensor just between the boss structure 8 of glass 2
Often can be the most unsettled during work, and its bottom surface can be with boron glass in some overload environment
The boss structure 8 end face contact of 2, prevents overload from destroying sensor.
With reference to Fig. 4, the first described beam 6 and the two ends of the second beam 7 are along [100] crystal orientation
Being disposed with varistor 3 at stress maximum, four varistors 3 are the single of 2-4 folding
Pressure drag bar, four varistors 3 by metal lead wire 4 and pad 5 be connected with each other composition favour this
Energising bridge.
The operation principle of the present invention is:
Use boss structure 8, structurally can play good position-limiting action, at siliceous substrate
Form beam diaphragm structure on 1, play stress concentration effect, improve the sensitivity of sensor, solve
Measuring a difficult problem for small quantity stroke pressure, there is not hard-core mass in beam diaphragm structure, it is to avoid pass
The interference of the most vibrated i.e. acceleration signal of sensor, improves sensor capacity of resisting disturbance, should
Sensor, while meeting high sensitivity and high linearity requirement, has high overload and high side concurrently
Characteristic to effect resistivity.
The beam film of traditional beam film island structure and the present invention is added glass projective table type structure and carries out horizontal stroke
To effect coefficient, maximum strain amount and resonant frequency analysis (on-load pressure 1KPa, acceleration
100g), following analysis result is obtained:
Signal to noise ratio is equal to when sensor is by the acceleration noise signal of X-direction and Z-direction
Maximum stress and the ratio of the maximum stress being under pressure without sensor during acceleration noise signal, believe
Ratio of making an uproar is the smaller the better.Due to present the used structure of most micro-pressure sensor, there is inertia
The position limiting structure of mass, so it is high generally to there is acceleration noise signal in micro-pressure sensor
Problem, reduces acceleration noise, for improving the performance of micro-pressure sensor, opens up wide range of application
Have great importance.Being not difficult to find out by result, beam diaphragm structure adds glass boss structure micro-
Under little pressure, its maximum stress is output as 6 times of beam film island structure, has higher sensitivity；
In addition beam diaphragm structure adds glass boss structure and has the outstanding energy reducing acceleration noise
Power, is only the 1/20 of beam film island structure, and X-direction is only 1/857 in its signal to noise ratio of Z-direction.
Compare through data and conclude that beam diaphragm structure of the present invention adds glass boss structure and can expire
Foot high sensitivity and the requirement of low acceleration noise.Additionally, can bear according to pressure transducer
The design requirement of maximum stress 600MPa, when 20KPa pressure effect on a sensor its
Maximum defluxion is deformed into 64um, and maximum stress is 580MPa, it is thus necessary to determine that glass boss 5
Physical dimension, make the distance between boss structure 5 and cavity 4 upper surface be greater than 3.3um and
Position limitation protection requirement less than 64um.
Claims (1)
1. there is a micropressure sensor for the low acceleration noise of high overload, including siliceous base
The end (1), it is characterised in that: it is provided with cavity, siliceous base in the middle part of the back side of siliceous substrate (1)
The back side at the end (1) is bonded with boron glass (2), and leaves bonding surplus, boron glass (2)
Middle part be provided with boss structure (8), boss structure (8) bottom surface center and boron glass
(2) upper bottom surface center overlaps, the backside cavity of siliceous substrate (1) and boron glass (2)
Boss structure (8) match, and be reserved with the working clearance, at siliceous substrate (1) just
Face corrosion forms orthogonal first beam (6) and the second beam (7), in siliceous substrate (1)
Back side corrosion shape form flat film (9), the first beam (6) and the second beam (7) and siliceous substrate (1)
The beam of surrounding is collectively forming beam diaphragm structure；
Described the first beam (6) and the two ends of the second beam (7) are being answered along [100] crystal orientation
Power maximum is disposed with varistor (3), and four varistors (3) are the list of 2-4 folding
One pressure drag bar, four varistors (3) are mutual by metal lead wire (4) and pad (5)
Connect composition Wheatstone bridge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410704912.7A CN104458076B (en) | 2014-11-26 | 2014-11-26 | A kind of micropressure sensor with the low acceleration noise of high overload |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410704912.7A CN104458076B (en) | 2014-11-26 | 2014-11-26 | A kind of micropressure sensor with the low acceleration noise of high overload |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104458076A CN104458076A (en) | 2015-03-25 |
| CN104458076B true CN104458076B (en) | 2017-01-04 |
Family
ID=52904498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410704912.7A Active CN104458076B (en) | 2014-11-26 | 2014-11-26 | A kind of micropressure sensor with the low acceleration noise of high overload |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104458076B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300573B (en) * | 2015-11-06 | 2018-01-05 | 西安交通大学 | A kind of beam diaphragm structure piezoelectric transducer and preparation method thereof |
| CN109425367B (en) * | 2017-09-04 | 2022-09-27 | 深圳市宝佳业投资有限公司 | Graphene sensor range protection system |
| CN109425448B (en) * | 2017-09-04 | 2022-04-19 | 北京清正泰科技术有限公司 | Graphene sensor packaging system |
| CN112067177B (en) * | 2020-08-26 | 2022-07-08 | 上海域丰传感仪器有限公司 | Piezoresistive pressure sensor and piezoresistive pressure sensing array |
| CN112798169A (en) * | 2020-12-28 | 2021-05-14 | 山东大学 | High-voltage sensor with high overload resistance |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974596A (en) * | 1987-12-14 | 1990-12-04 | Medex, Inc. | Transducer with conductive polymer bridge |
| US4984467A (en) * | 1988-03-15 | 1991-01-15 | Pfister Gmbh | Transducer for pressures and/or vibrations and method for manufacturing thereof |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
| CN103105248A (en) * | 2013-01-16 | 2013-05-15 | 西安交通大学 | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor |
| CN103278270A (en) * | 2013-06-05 | 2013-09-04 | 厦门大学 | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method |
| CN103954383A (en) * | 2014-04-28 | 2014-07-30 | 西北工业大学 | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof |
-
2014
- 2014-11-26 CN CN201410704912.7A patent/CN104458076B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974596A (en) * | 1987-12-14 | 1990-12-04 | Medex, Inc. | Transducer with conductive polymer bridge |
| US4984467A (en) * | 1988-03-15 | 1991-01-15 | Pfister Gmbh | Transducer for pressures and/or vibrations and method for manufacturing thereof |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
| CN103105248A (en) * | 2013-01-16 | 2013-05-15 | 西安交通大学 | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor |
| CN103278270A (en) * | 2013-06-05 | 2013-09-04 | 厦门大学 | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method |
| CN103954383A (en) * | 2014-04-28 | 2014-07-30 | 西北工业大学 | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 基于硅隔离技术的耐高温压力传感器研究;赵玉龙等;《西安交通大学学报》;20021120;第36卷(第11期);1156-1158 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104458076A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104458076B (en) | A kind of micropressure sensor with the low acceleration noise of high overload | |
| CN102636298B (en) | Beam-film four-land structured micro-pressure high-overload sensor chip | |
| CN102768290B (en) | MEMS (micro-electrochemical systems) accelerometer and production method thereof | |
| CN103777037B (en) | Multi-beam double-mass-block acceleration sensor chip and preparation method thereof | |
| CN104764547B (en) | A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method | |
| CN104748904B (en) | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method | |
| CN208443865U (en) | A kind of monolithic integrated tri-axial acceleration sensor | |
| CN106672894B (en) | A kind of curvature sensor based on flexible base board mems switch structure | |
| CN107673306A (en) | A kind of preparation method of MEMS pressure sensor | |
| CN103063339A (en) | Silicon piezoresistive type pressure sensor chip with shielding layer | |
| CN106908626A (en) | A kind of capacitance microaccelerator sensitive structure | |
| US10156489B2 (en) | Piezoresistive pressure sensor | |
| CN102620865A (en) | Beam-film double island structure micro-pressure high-overload sensor chip | |
| CN113551812A (en) | Cross beam membrane stress concentration micro-pressure sensor chip and preparation method thereof | |
| CN207586316U (en) | Piezoelectric modulus measuring device | |
| CN106501548A (en) | A kind of micro-acceleration gauge of the complete silicon structure of Double deference and its manufacture method | |
| CN105136352A (en) | Capacitive pressure sensor and preparation method thereof | |
| CN113218544B (en) | Micro-pressure sensor chip with stress concentration structure and preparation method thereof | |
| CN202267554U (en) | Silicon piezoresistive type pressure sensor chip with shielding layer | |
| CN105004457B (en) | The monocrystalline-silicon pressure transducer chip of service behaviour can be improved | |
| CN109856425A (en) | A kind of monolithic integrated tri-axial acceleration sensor and its manufacture craft | |
| CN103995151B (en) | Composite eight-beam high-frequency-response acceleration sensor chip | |
| CN103995149B (en) | Aperture eight-beam type acceleration sensor chip | |
| CN106199071B (en) | A kind of anti high overload lower range capacitance acceleration transducer and its manufacturing method | |
| CN105300573B (en) | A kind of beam diaphragm structure piezoelectric transducer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |