CN104952972B - Self-supporting CdZnTe film preparation method - Google Patents
Self-supporting CdZnTe film preparation method Download PDFInfo
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- CN104952972B CN104952972B CN201510174196.0A CN201510174196A CN104952972B CN 104952972 B CN104952972 B CN 104952972B CN 201510174196 A CN201510174196 A CN 201510174196A CN 104952972 B CN104952972 B CN 104952972B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 37
- 229910004611 CdZnTe Inorganic materials 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000000859 sublimation Methods 0.000 claims abstract description 27
- 230000008022 sublimation Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 50
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000013464 silicone adhesive Substances 0.000 claims description 5
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 4
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- 238000002061 vacuum sublimation Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000004821 distillation Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000005092 sublimation method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Abstract
The invention discloses a self-supporting CdZnTe film preparation method. The close-spaced sublimation method is adopted to postprocess a deposited film so as to separate the film and a substrate, so that a continuous even sample is obtained. In the invention, a CdZnTe single crystal slice is adopted as a sublimation source, and ideal ohmic electrode contact is achieved by means of surface treatment. The method of the invention has the characteristics of simple process, relatively low cost, high repeatability, etc., prevents the preparation from being limited to substrate size, can be flexibly applied to a large-area low-leakage-current film of a radiation detector, and may simplify the radiation detector manufacturing technology.
Description
Technical field
The present invention relates to a kind of preparation method of inorganic non-metallic film crystal material, more particularly to a kind of semiconductor film
The preparation method of film crystalline material, is applied to the electricity such as photovoltaic device, photodetection, pixel detector and high-energy radiation detectors
Sub- components and parts technical field.
Background technology
Cadmium-zinc-teiluride (cdznte) is direct band gap-Compound semiconductor, this kind of material is higher due to having
Average atomic number and larger energy gap, so have larger absorptance.Additionally, the energy gap of this kind of material can
Changed in 1.45ev ~ 2.26ev with the change with zn component, this material also has the characteristics that high resistivity simultaneously, this makes to use
The device that cdznte material is made can have less leakage current.These excellent features make cdznte thin film photovoltaic device,
The aspects such as photodetection, pixel detector and high-energy radiation detectors are gathered around and are had broad application prospects.Brilliant compared to cdznte
Bulk detector, the technology of preparing of cdznte thin film is simpler, and cost is lower, easily produces by batch.
Cdznte thin film can be prepared by chemical methodes such as chemical vapor depositions, also can pass through thermal evaporation, magnetron sputtering, near-space
Between the physical vapour deposition (PVD) such as sublimed method obtain.In these method for manufacturing thin film, close spaced sublimation method is the most promising one kind
Method, this method low cost, speed are fast, quality is good it is adaptable to large-area film deposition.Using close spaced sublimation method preparation
Cdznte thin film is polycrystal film, and the condition that can be prepared by change is of a relatively high to obtain surfacing, resistivity
Cdznte thin film.
Mainly it is deposited on the glass of simple glass, fto or ito coating using the cdznte thin film of close spaced sublimation method preparation
On glass or monocrystalline silicon piece, these substrates limit the size of cdznte thin film to a certain extent and answer in practical devices
With.
Content of the invention
In order to solve prior art problem, it is an object of the invention to overcoming the shortcomings of that prior art exists, provide one kind
The preparation method of self-supporting cdznte thin film, after close spaced sublimation method preparation cdznte thin film, then carries out post processing, will
Thin film is separated with substrate, obtains the cdznte thin film of self-supporting, to practical application in photoelectric detection equipment for the cdznte thin film
Provide more flexible and effective technical scheme.
Create purpose for reaching foregoing invention, the present invention adopts following technical proposals:
A kind of preparation method of self-supporting cdznte thin film, including following process and step:
A. the preparation of cdznte monocrystalline sublimation source: high-purity cd, zn, te are put in quartz ampoule, wherein the molar content of zinc
For 2 ~ 20%, under vacuum conditions, cdznte monocrystal is grown using mobile heating, using the crystal cut having grown as
Sublimation source；
B. substrate pre-treatment: using soda-lime glass as substrate, deionized water, acetone and ethanol surpass respectively by substrate
Sound cleans 5～20 minutes, washes away impurity and the Organic substance of substrate surface, puts into close spaced sublimation reaction indoor after drying；
C. cdznte thin film growth process: control close spaced sublimation reaction room pressure to below 1pa, will be in step a
The sublimation source of preparation is heated to 500 ~ 650 DEG C, and by the silicon after being processed in stepb to 150 ~ 550 DEG C, in lining
Cdznte thin film is carried out on bottom and grows 30 ~ 180min, prepare the cdznte thin film that thickness is 50-500mm, then that cdznte is thin
Membrane sample is cooled to room temperature, and cdznte film sample is reacted indoor taking-up from close spaced sublimation；Preferably, will be in step a
The sublimation source of middle preparation is heated to 650 DEG C, and by the silicon after being processed in stepb to 200 ~ 300 DEG C, in substrate
On carry out cdznte thin film growth 120min, prepare thickness be 90-115mm cdznte thin film；
D. the stripping of cdznte thin film: the cdznte preparing in stepb film sample is immersed in mass percent is
In 1 ~ 10% hydrogenperoxide steam generator, stand or with being cleaned by ultrasonic the ultrasonic 5 ~ 15min of instrument, further take out cdznte film sample simultaneously
3 ~ 5h is dried in 60 DEG C of drying baker, then touches cdznte film edge, so that cdznte thin film is peeled off from substrate；
E. the adhesion again of cdznte thin film: the cdznte thin film peeled off in step d is sticked to base again with adhesive
On bottom, so that cdznte thin film is transferred at the position of required use in substrate, obtain cdznte film substrate；Adhesive is preferably adopted
With acrylic compounds adhesive, silicone adhesive or electroconductive resin adhesive；
F. the annealing of cdznte film substrate and corrosion: compound concentration is 0.1 ~ 0.5% bromine methanol solution, will be in step e
In cdznte film substrate put into air pressure be below 1pa vacuum sublimation chamber in, under 200 ~ 350 ° of c anneal 20 ~ 60min,
Then the cdznte film substrate immersion bromine methanol solution after annealing is corroded 10 ~ 60s, the sample deionized water after corrosion is clear
Dried up with nitrogen again after washing；
G. Ohm contact electrode and after annealing are prepared: thin to cdznte dried in step f using ion sputtering instrument
Film surface deposit metal electrodes, place, in cdznte film surface, the circular electrode mask plate that hole diameter is 1mm, control sputtering
Ion stream is 1 ~ 5ma, sputtering time 10 ~ 30min；After completing metal electrode preparation, then move back in the vacuum environment of below 1pa
Fire in and under 200 ~ 350 ° of c anneal 10 ~ 30min；Metal electrode preferably employs gold electrode；
H. the stripping of device: the cdznte film substrate sample after annealing in step g is soaked 10min in acetone,
By the adhesive dissolving between cdznte thin film and substrate, make to separate between cdznte thin film and substrate, then take out cdznte
Film sample is dried 4h at 60 DEG C, finally gives the self-supporting cdznte thin film being combined with Ohm contact electrode functional layer.
In step e, adhesive adopts acrylic compounds adhesive, silicone adhesive or electroconductive resin adhesive.
Metal electrode adopts gold electrode.
The present invention is based on close spaced sublimation technology, by carrying out post processing to post-depositional thin film, comes separating film and lining
Bottom, obtains the sample of continuous formation.This technique, with cdznte single-crystal wafer as sublimation source, is to peel off sample with hydrogenperoxide steam generator
Product, and obtain preferable Ohmic electrode contact by some surface treatments.
The present invention compared with prior art, has and obviously projects substantive distinguishing features and remarkable advantage as follows:
1. the present invention is a kind of technique of practicality cdznte thin film growth using close spaced sublimation method (css), is derived from
Support thin film, be suitable to be applied in cdte film preparation it is possible to make become can adhesiveness device, near space
Sublimed method cdznte thin film preparation process compares that cdznte monocrystalline growing process is simple, cost is lower, can large area preparation, in batches
Growth feasibility is high；
2. the method for stripping film of the present invention is simple, and operability and repeatability are high, can obtain continuous whole
Cdznte thin film is it is possible to stick to the position of required use with common adhesive or electroconductive resin adhesive by cdznte thin film
In the substrate put, this makes the position of cdznte thin film and flexible in size is variable so that this kind of sample is more suitably applied to radiate
Sensitive detection parts, meanwhile, this does not affect to connect by the good ohm of the technique acquisition such as annealing and corrosion in cdznte film surface
Touched electrode.
Brief description
Fig. 1 is the cdznte film sample structural representation of the embodiment of the present invention one deposition preparation.
Fig. 2 is the schematic diagram that the embodiment of the present invention one peels off cdznte thin film.
Fig. 3 is the iv response collection of illustrative plates to x-ray for the radiation detector that the embodiment of the present invention one prepares cdznte film preparation.
Specific embodiment
Details are as follows for the preferred embodiments of the present invention:
Embodiment one:
In the present embodiment, referring to Fig. 1～Fig. 3, a kind of preparation method of self-supporting cdznte thin film, including following process
And step:
A. the preparation of cdznte monocrystalline sublimation source: high-purity cd, zn, te are put in quartz ampoule, wherein the molar content of zinc
For 4%, under vacuum conditions, using the mobile heating growth cdznte monocrystal that mass is good, component distributing is relatively uniform,
Using the crystal cut having grown as sublimation source；
B. substrate pre-treatment: using soda-lime glass as substrate, deionized water, acetone and ethanol surpass respectively by substrate 2
Sound cleans 15 minutes, washes away impurity and the Organic substance on substrate 2 surface, puts into close spaced sublimation reaction indoor after drying；
C. cdznte thin film growth process: start tool pumping vacuum, close spaced sublimation reative cell internal gas pressure is evacuated to 1pa
After below, close mechanical pump, the sublimation source of preparation in step a is heated to 650 DEG C, and after being processed in stepb
Substrate 2 be heated to 200 DEG C, carry out on the substrate 2 cdznte thin film 1 growth 120min, prepare thickness be 90mm cdznte
Cdznte film sample referring to Fig. 1, is then cooled to room temperature, closes mechanical pump by thin film 1, and by cdznte film sample near
The indoor taking-up of Space Sublimation reaction；
D. the stripping of cdznte thin film: the cdznte preparing in stepb film sample is immersed in mass percent is
In 3% hydrogenperoxide steam generator, with being cleaned by ultrasonic the ultrasonic 5min of instrument, further take out cdznte film sample and in 60 DEG C of drying baker
In 5h is dried, then touch cdznte thin film 1 edge, so that cdznte thin film 1 is peeled off from substrate 2, obtain with substrate 2 depart from
Cdznte thin film 1, referring to Fig. 2；
E. the adhesion again of cdznte thin film: with silicone adhesive by the cdznte thin film peeled off in step d again
Adhesion on the glass substrate, makes cdznte thin film transfer at the position of required use in substrate of glass, obtains cdznte thin film
Substrate；
F. the annealing of cdznte film substrate and corrosion: compound concentration is 0.1% bromine methanol solution, by step e
Cdznte film substrate is put in the vacuum sublimation chamber that air pressure is below 1pa, and anneal under 200 ° of c 40min, after then annealing
Cdznte film substrate immersion bromine methanol solution corrosion 30s, after corrosion sample deionized water cleaning after blown with nitrogen again
Dry；
G. Ohm contact electrode and after annealing are prepared: thin to cdznte dried in step f using ion sputtering instrument
Film surface deposit gold electrode, cdznte film surface place hole diameter be 1mm circular electrode mask plate, control sputtering from
Subflow is 5ma, sputtering time 15min；Complete gold electrode preparation after, then in the vacuum environment of below 1pa anneal in and
Anneal under 200 ° of c 20min；
H. the stripping of device: the cdznte film substrate sample after annealing in step g is soaked 10min in acetone,
By the silicone adhesive dissolving between cdznte thin film and glass substrate, make to divide between cdznte thin film and glass substrate
From then taking out cdznte film sample and 4h be dried at 60 DEG C, finally give and be combined with Ohmic contact gold electrode functional layer
Self-supporting cdznte thin film.
In the present embodiment, prepare a kind of cdznte thin film of self-supporting, by later stage interface processing, by cdznte thin film
Separate with substrate, obtain self-supporting continuous cdznte thin film, and can make can adhesiveness device so that cdznte thin film more
It is integrated in well the sensitive detection parts of needles of various sizes, and have preferable x-ray Direction response, referring to Fig. 3.Based on common near space
Sublimed method equipment, with cdznte single-crystal wafer as sublimation source, with pretreated simple glass as substrate, keep certain substrate with
Distillation source temperature, no working gas, directly carry out thin film deposition.Post processing is carried out to deposition rear film and obtains the cdznte supporting
Thin film.The present embodiment method have process is simple, cost lower, repeatable high the features such as, can prepare and not be subject to substrate dimension
Limit, be flexibly applied to the thin film of the radiation detector of large area, low-leakage current, be expected to make the manufacturing technology of radiation detector
Easier.
Embodiment two:
The present embodiment is essentially identical with embodiment one, and difference is:
The preparation method of the present embodiment self-supporting cdznte thin film, including following process and step:
A. the preparation of cdznte monocrystalline sublimation source: this step is identical with embodiment one；
B. substrate pre-treatment: this step is identical with embodiment one；
C. cdznte thin film growth process: start tool pumping vacuum, close spaced sublimation reative cell internal gas pressure is evacuated to 1pa
After below, close mechanical pump, the sublimation source of preparation in step a is heated to 650 DEG C, and after being processed in stepb
Substrate 2 be heated to 300 DEG C, carry out on the substrate 2 cdznte thin film growth 120min, prepare thickness be 115mm cdznte
Then cdznte film sample is cooled to room temperature by thin film 1, closes mechanical pump, and by cdznte film sample from close spaced sublimation
The indoor taking-up of reaction；
D. the stripping of cdznte thin film: this step is identical with embodiment one；
E. the adhesion again of cdznte thin film: this step is identical with embodiment one；
F. the annealing of cdznte film substrate and corrosion: this step is identical with embodiment one；
G. Ohm contact electrode and after annealing are prepared: this step is identical with embodiment one；
H. the stripping of device: this step is identical with embodiment one.
Above in conjunction with accompanying drawing, the embodiment of the present invention is illustrated, but the invention is not restricted to above-described embodiment, acceptable
The purpose of the innovation and creation according to the present invention makes multiple changes, under all spirit and principle according to technical solution of the present invention
The change made, modification, replacement, combination, simplifying, all should be equivalent substitute mode, as long as meeting the goal of the invention of the present invention, only
To broadly fall into the guarantor of the present invention without departing substantially from the know-why of the preparation method of self-supporting cdznte thin film of the present invention and inventive concept
Shield scope.
Claims (4)
1. a kind of preparation method of self-supporting cdznte thin film is it is characterised in that include following process and step:
A. the preparation of cdznte monocrystalline sublimation source: high-purity cd, zn, te are put in quartz ampoule, wherein the molar content of zinc be 2 ~
20%, under vacuum conditions, cdznte monocrystal is grown using mobile heating, using the crystal cut having grown as distillation
Source；
B. substrate pre-treatment: using soda-lime glass as substrate, deionized water, acetone and EtOH Sonicate are clear respectively by substrate
Wash 5～20 minutes, wash away Organic substance and the other impurities of substrate surface, put into close spaced sublimation reaction after drying indoor；
C. cdznte thin film growth process: control close spaced sublimation reaction room pressure to below 1pa, will be in described step a
The sublimation source of preparation is heated to 500 ~ 650 DEG C, and by the silicon to 150 ~ 550 DEG C after being processed in described step b,
Cdznte thin film is carried out on substrate and grows 30 ~ 180min, prepare the cdznte thin film that thickness is 50-500mm, then will
Cdznte film sample is cooled to room temperature, and cdznte film sample is reacted indoor taking-up from close spaced sublimation；
The stripping of d.cdznte thin film: it is 1 that the cdznte film sample of preparation in described step c is immersed in mass percent
In ~ 10% hydrogenperoxide steam generator, standing or with ultrasonic cleaning the ultrasonic 5 ~ 15min of instrument, further take out cdznte film sample and
3 ~ 5h is dried in 60 DEG C of drying baker, then touches cdznte film edge, so that cdznte thin film is peeled off from substrate；
E. the adhesion again of cdznte thin film: the cdznte thin film peeled off in described step d is sticked to base again with adhesive
On bottom, so that cdznte thin film is transferred at the position of required use in substrate, obtain cdznte film substrate；
F. cdznte film substrate annealing and corroding: prepare the bromine methanol solution that mass percent concentration is 0.1 ~ 0.5%, will be
Cdznte film substrate in described step e is put in the vacuum sublimation chamber that air pressure is below 1pa, anneals under 200 ~ 350 ° of c
Then cdznte film substrate immersion bromine methanol solution after annealing is corroded 10 ~ 60s, the sample after corrosion is used by 20 ~ 60min
Dried up with nitrogen again after deionized water cleaning；
G. Ohm contact electrode and after annealing are prepared: thin using the cdznte to after dry up in described step f for the ion sputtering instrument
Film surface deposit metal electrodes, place, in cdznte film surface, the circular electrode mask plate that hole diameter is 1mm, control sputtering
Ion stream is 1 ~ 5ma, sputtering time 10 ~ 30min；After completing metal electrode preparation, then move back in the vacuum environment of below 1pa
Fire, and the 10 ~ 30min that anneals under 200 ~ 350 ° of c；
H. the stripping of device: the cdznte film substrate sample after annealing in step g is soaked 10min in acetone, will
Adhesive dissolving between cdznte thin film and substrate, makes to separate between cdznte thin film and substrate, then takes out cdznte thin
Membrane sample is dried 4h at 60 DEG C, finally gives the self-supporting cdznte thin film being combined with Ohm contact electrode functional layer.
2. according to claim 1 self-supporting cdznte thin film preparation method it is characterised in that: in described step e, institute
State adhesive and adopt acrylic compounds adhesive, silicone adhesive or electroconductive resin adhesive.
3. self-supporting cdznte thin film according to claim 1 or claim 2 preparation method it is characterised in that: in described step g
In, described metal electrode adopts gold electrode.
4. self-supporting cdznte thin film according to claim 1 or claim 2 preparation method it is characterised in that: in described step c
In, the sublimation source of preparation in described step a is heated to 650 DEG C, and the substrate after being processed in described step b is added
Heat, to 200 ~ 300 DEG C, carries out cdznte thin film growth 120min on substrate, prepares the cdznte that thickness is 90-115mm thin
Film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174196.0A CN104952972B (en) | 2015-04-14 | 2015-04-14 | Self-supporting CdZnTe film preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174196.0A CN104952972B (en) | 2015-04-14 | 2015-04-14 | Self-supporting CdZnTe film preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN104952972A CN104952972A (en) | 2015-09-30 |
| CN104952972B true CN104952972B (en) | 2017-01-25 |
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| CN109841549B (en) * | 2017-11-28 | 2020-11-13 | 中国科学院金属研究所 | Method for lossless transfer of self-supporting low-dimensional material |
| TW202100452A (en) * | 2019-06-28 | 2021-01-01 | 日商Ｆｌｏｓｆｉａ股份有限公司 | Etching treatment method useful for performing etching treatment on an object in industry advantageously |
| CN113181892A (en) * | 2021-04-22 | 2021-07-30 | 浙江工商大学 | Product and method for preventing algal bloom through photocatalysis |
| CN113471303A (en) * | 2021-06-15 | 2021-10-01 | 上海大学 | High-detection-efficiency self-supporting CdZnTe thick film structure, detection device, preparation method and application thereof |
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| US8613899B2 (en) * | 2012-04-17 | 2013-12-24 | Rohm And Haas Electronic Materials Llc | Apparatus and method for producing free-standing materials |
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
| CN103500776A (en) * | 2013-09-26 | 2014-01-08 | 上海大学 | Preparation method of silica-based CdZnTe film ultraviolet light detector |
| CN103904160A (en) * | 2014-03-21 | 2014-07-02 | 上海大学 | X-ray detector manufacturing method based on CdZnTe film |
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