CN108807570A - The preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate - Google Patents
The preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate Download PDFInfo
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- CN108807570A CN108807570A CN201810682907.9A CN201810682907A CN108807570A CN 108807570 A CN108807570 A CN 108807570A CN 201810682907 A CN201810682907 A CN 201810682907A CN 108807570 A CN108807570 A CN 108807570A
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 132
- 239000011787 zinc oxide Substances 0.000 claims abstract description 65
- 239000010453 quartz Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 21
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- 238000001035 drying Methods 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 19
- 238000010792 warming Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 6
- 235000019441 ethanol Nutrition 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 239000003708 ampul Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 30
- 239000010408 film Substances 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 208000000453 Skin Neoplasms Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
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- 238000003912 environmental pollution Methods 0.000 description 1
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- 238000007710 freezing Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 201000000849 skin cancer Diseases 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
- C01G9/03—Processes of production using dry methods, e.g. vapour phase processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of preparation methods of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate, the method is to be uniformly placed on the zinc powder of quartz boat and quartz ampoule as raw material, zinc oxide micrometer line is prepared by chemical vapour deposition technique, then the zinc oxide micrometer line prepared is transferred in clean glass substrate, marshalling, instill PVAL glue covering zinc oxide micrometer line surface, after the glue solidifies, zinc oxide micrometer linear array is taken off with PVAL substrates from glass substrate, complete the work of zinc oxide micrometer linear array insertion flexible substrate, again golden interdigital electrode is deposited in zinc oxide micrometer line array surface, complete the preparation of ZnO micro wire array ultraviolet detectors.The method uses PVAL flexible substrates, can farthest protect zinc oxide micrometer linear array to form best contact with electrode so that element height integration.
Description
Technical field
The present invention relates to ultraviolet detector fields, and in particular to a kind of insertion flexible substrate for wearable device
The preparation method of ZnO micro wire array ultraviolet detectors.
Background technology
With popularizing for intelligent terminal, there are huge market prospects in wearable electronic.Flexible wearable detects
Utensil has the features such as portable frivolous, photoelectric properties are excellent, the integrated level of device is high.Ultraviolet detector technology is widely used in sky
Between communication, ultraviolet interference, ultraviolet guidance, environmental pollution detection, biological medicine analysis etc. fields.Human eye or superficial skin tissue
Be exposed under the ultraviolet light of some strength, different degrees of injury can be caused, and cause one of human skin cancer it is important
Reason.Therefore the ultraviolet detection equipment of the flexible wearable of ultraviolet detector has become one of the emphasis of ultraviolet detection research.
Zinc oxide is a kind of broad stopband direct band-gap semicondictor, and energy gap is 3.37eV at room temperature, and exciton bind energy is high
Up to 60meV, there is lower thin film epitaxial growth temperature, chemical property is stablized at room temperature, there is that source is wide, price is low, ring
The advantages that border is friendly.Ultraviolet detector high sensitivity, quantum efficiency and the responsiveness height of Zinc oxide-base, response time are fast.
The ultraviolet detector of Zinc oxide-base is by preparing zinc oxide nanowire/micro wire or film system on substrate
At.The main preparation methods of zinc-oxide film have the side such as Organometallic Chemistry vapor phase deposition, pulsed laser deposition, molecular beam epitaxy
Method, the main preparation method of zinc oxide nano-wire array have chemical meteorology deposition and sol-gal process.Zhejiang University uses pulse
The method of laser deposition has prepared zinc-oxide film in P-type silicon substrate.The method that University Of Suzhou uses chemical meteorology deposition
Zinc oxide nanowire is synthesized, electronic science and technology university deposited zinc-oxide film using sol-gal process in silicon substrate.It is molten
The advantage of sol-gel is that synthesis temperature is low, easy to operate, but the zinc-oxide film pattern synthesized is not easy to control, crystalline quality
It is relatively low.
Invention content
In view of the deficiencies of the prior art, it is an object of the present invention to provide a kind of ZnO micron linear arrays of embedded flexible substrate
The preparation method of row ultraviolet detector, the method is at low cost, easy to operate, and zinc oxide micrometer linear array is embedded in flexibility
In substrate, compared with the synthetic method of traditional flexible ultraviolet detector, zinc oxide micrometer linear array can be farthest protected
Row, can form best contact with electrode so that element height integration.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate, the method includes following
Step：
S1, cleaning, drying pretreatment is carried out to quartz test tube and quartz boat；
S2,5-10 grams of the zinc powder that purity is 99.99% is weighed, it is evenly laid out in clean quartz boat bottom and by quartz boat
It is placed in quartz test tube, high-temperature area quartz test tube being placed among tube furnace；
S3, tube furnace is warming up to a certain temperature in 980-1000 DEG C with 10-15 DEG C/min of heating rate, and in tube furnace
In temperature-rise period continue using flow velocity 15-20ml/min be passed through high pure nitrogen as protect gas, after tube furnace is warming up to the temperature,
Stopping is passed through nitrogen, and starts to be passed through high purity oxygen gas with flow velocity 15-20ml/min, keeps temperature 1-1.5h；
S4, tube furnace is closed, after being cooled to room temperature, the zinc oxide micrometer line taken out in quartz test tube is for use；
S5, cleaning, drying pretreatment is carried out to transparent glass substrate；
S6, it will be placed on vacuum glove box operation console by pretreated transparent glass substrate, by zinc oxide micrometer line
It is transferred to marshalling in transparent glass substrate, is allowed to come into full contact with substrate and is bonded, instills the covering of 1-2mlPVAL glue dropwise
After zinc oxide micrometer line array surface, it is put into 60-65 DEG C of drying box and keeps 1-1.5h；
S7, the PVAL films of solidification are removed from transparent glass substrate, gold is deposited in zinc oxide micrometer line array surface
Interdigital electrode completes the preparation of ZnO micro wire array ultraviolet detectors.
Further, step S1 uses distilled water, acetone, ethyl alcohol to carry out ultrasound to quartz test tube and quartz boat respectively successively
Cleaning, it is for use after drying.
Further, step S5 uses distilled water, acetone, ethyl alcohol to make after being cleaned by ultrasonic to transparent glass substrate successively
It is dried up with stream of nitrogen gas, drying, which is placed in UV ozone machine, handles 30min.
Further, the golden interdigital electrode uses stainless steel interdigital electrode as mask plate, and interdigital finger beam is 100 μm,
Spacing be 100 μm, thickness 100nm, totally 5 pairs it is interdigital.
Further, in step S2,7 grams of the zinc powder that purity is 99.99% is weighed.
Further, in step S3, tube furnace is warming up to 990 DEG C with 10-15 DEG C/min of heating rate, and in tube furnace
Persistently high pure nitrogen is passed through in temperature-rise period using flow velocity 15ml/min as protection gas to stop after tube furnace is warming up to the temperature
It is only passed through nitrogen, and starts to be passed through high purity oxygen gas with flow velocity 15ml/min, keeps temperature 1h.
Further, it in step S6, after instilling 2mlPVAL glue covering zinc oxide micrometer line array surface dropwise, is put into
60 DEG C of drying box keeps 1h.
Further, the transparent glass substrate can replace with Sapphire Substrate or quartz substrate.
Compared with prior art, the present invention having the following advantages that and advantageous effect：
The preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate provided by the invention, at low cost, behaviour
Make simply, and zinc oxide micrometer linear array is embedded in flexible substrate, the synthetic method with traditional flexible ultraviolet detector
It compares, can be taking human as the high zinc oxide micrometer line of selective freezing quality, and can farthest protect zinc oxide micrometer linear array
Row, can form best contact with electrode so that element height integration, because the flexibility of the PVAL substrates used is more
Good, device can be bent the angle of bigger, and bending radius can be with very little.
Description of the drawings
Fig. 1 is the zinc oxide micrometer line array ultraviolet detector schematic diagram of embedded flexible substrate in the embodiment of the present invention 1.
Fig. 2 is the scanning electron microscope (SEM) photograph of the zinc oxide micrometer line for the composition ultraviolet detector chosen in the embodiment of the present invention 1.
Fig. 3 is the zinc oxide micrometer line array ultraviolet detector of embedded flexible substrate in the embodiment of the present invention 1 different curved
Photoresponse collection of illustrative plates under bent angle.
Fig. 4 is the zinc oxide micrometer line array ultraviolet detector of embedded flexible substrate in the embodiment of the present invention 1 different curved
Response time collection of illustrative plates under bent angle.
Wherein, 1-PVAL substrates, 2- zinc oxide micrometer lines, 3- gold electrodes.
Specific implementation mode
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment 1：
Present embodiments provide a kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate, institute
The method of stating includes the following steps：
S1, cleaning, drying pretreatment is carried out to quartz test tube and quartz boat, uses distilled water, acetone, ethyl alcohol difference successively
Quartz test tube and quartz boat are cleaned by ultrasonic, it is for use after drying；
S2,5 grams of the zinc powder that purity is 99.99% is weighed, it is evenly laid out in clean quartz boat bottom and to put quartz boat
It sets in quartz test tube, high-temperature area quartz test tube being placed among tube furnace；
S3, tube furnace is warming up to 980 DEG C with 10 DEG C/min of heating rate, and continued with stream in tube furnace temperature-rise period
Fast 15ml/min is passed through high pure nitrogen as protection gas, and after tube furnace is warming up to the temperature, stopping is passed through nitrogen, and start with
Flow velocity 15ml/min is passed through high purity oxygen gas, keeps temperature 1h；
S4, tube furnace is closed, after being cooled to room temperature, the zinc oxide micrometer line taken out in quartz test tube is for use；
S5, cleaning, drying pretreatment is carried out to transparent glass substrate, uses distilled water, acetone, ethyl alcohol to transparent glass successively
Glass substrate is dried up after being cleaned by ultrasonic using stream of nitrogen gas, and drying, which is placed in UV ozone machine, handles 30min；
S6, it will be placed on vacuum glove box operation console by pretreated transparent glass substrate, by zinc oxide micrometer line
It is transferred to marshalling in transparent glass substrate, is allowed to come into full contact with substrate and is bonded, 2mlPVAL glue is instilled dropwise and covers oxygen
After changing zinc micro wire array surface, it is put into 60 DEG C of drying box and keeps 1h；
S7, the PVAL films of solidification are removed from transparent glass substrate, gold is deposited in zinc oxide micrometer line array surface
Interdigital electrode, the gold interdigital electrode use stainless steel interdigital electrode as mask plate, and interdigital finger beam is 100 μm, spacing 100
μm, thickness 100nm, totally 5 pairs of interdigital, preparations of completion ZnO micro wire array ultraviolet detectors.
The scanning electron microscope (SEM) photograph of the zinc oxide micrometer line of selection is as shown in Fig. 2, the ZnO for the insertion flexible substrate being prepared is micro-
Nanowire arrays ultraviolet detector is as shown in Figure 1, wherein 1 is PVAL substrates, and 2 be zinc oxide micrometer line, and 3 be gold electrode.To preparing
Ultraviolet detector characterized, the zinc oxide micrometer line array ultraviolet detector of the embedded flexible substrate is at differently curved angle
Photoresponse collection of illustrative plates under degree is as shown in figure 3, comparison finds that optical responsivity is maximum when bending angle is 0 °, with bending angle
The increase of degree, optical responsivity can be gradually reduced, but in the case of 180 ° of maximum bending angle, and device is still rung existing
It answers, does not fail, show the device still can work under extreme conditions.The zinc oxide micrometer of the embedded flexible substrate
Response time collection of illustrative plates of the linear array ultraviolet detector under differently curved angle is as shown in figure 4, it can be seen from the figure that device
Rise time is 4.8 μ s, and the fall time of device reduces with the increase of bending angle, this illustrates the device in bigger
Bending condition under, response speed is slightly promoted.
Embodiment 2：
A kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate is present embodiments provided, it is real
It is same as Example 1 to test condition, only in step S2, weighs purity for 99.99% 7 grams of zinc powder, in step S3, by tube furnace
It is warming up to 1000 DEG C with 15 DEG C/min of heating rate, and in tube furnace temperature-rise period continues to be passed through with flow velocity 20ml/min high-purity
Nitrogen is as protection gas, and after tube furnace is warming up to the temperature, stopping is passed through nitrogen, and starts to be passed through height with flow velocity 20ml/min
Purity oxygen keeps temperature 1.5h；In step S6, after instilling 1mlPVAL glue covering zinc oxide micrometer line array surface dropwise,
It is put into 65 DEG C of drying box and keeps 1.5h.
Embodiment 3：
A kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate is present embodiments provided, it is real
It is same as Example 1 to test condition, only in step S2, weighs purity for 99.99% 10 grams of zinc powder, in step S3, by tubular type
Stove is warming up to 990 DEG C with 13 DEG C/min of heating rate, and is persistently passed through height with flow velocity 17ml/min in tube furnace temperature-rise period
Pure nitrogen gas is as protection gas, and after tube furnace is warming up to the temperature, stopping is passed through nitrogen, and starts to be passed through with flow velocity 17ml/min
High purity oxygen gas keeps temperature 1.3h；In step S6,1.5mlPVAL glue is instilled dropwise and covers zinc oxide micrometer linear array table
Behind face, it is put into 63 DEG C of drying box and keeps 1.3h.
Embodiment 4：
A kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate is present embodiments provided, it is real
It is same as Example 1 to test condition, the transparent glass substrate only can be replaced with into Sapphire Substrate or quartz substrate.
Embodiment 5：
A kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate is present embodiments provided, it is real
It is same as Example 1 to test condition, only in step S2, weighs purity for 99.99% 10 grams of zinc powder, in step S3, by tubular type
Stove is warming up to 990 DEG C with 10 DEG C/min of heating rate, and is persistently passed through height with flow velocity 15ml/min in tube furnace temperature-rise period
Pure nitrogen gas is as protection gas, and after tube furnace is warming up to the temperature, stopping is passed through nitrogen, and starts to be passed through with flow velocity 15ml/min
High purity oxygen gas keeps temperature 1h；In step S6, after instilling 2mlPVAL glue covering zinc oxide micrometer line array surface dropwise,
It is put into 60 DEG C of drying box and keeps 1.5h.
The above, patent preferred embodiment only of the present invention, but the protection domain of patent of the present invention is not limited to
This, any one skilled in the art is in the range disclosed in patent of the present invention, according to the skill of patent of the present invention
Art scheme and its patent of invention design are subject to equivalent substitution or change, belong to the protection domain of patent of the present invention.
Claims (8)
1. a kind of preparation method of the ZnO micro wire array ultraviolet detectors of embedded flexible substrate, which is characterized in that the method
Include the following steps：
S1, cleaning, drying pretreatment is carried out to quartz test tube and quartz boat；
S2,5-10 grams of the zinc powder that purity is 99.99% is weighed, it is evenly laid out in clean quartz boat bottom and to place quartz boat
In quartz test tube, the high-temperature area that quartz test tube is placed among tube furnace；
S3, tube furnace is warming up to a certain temperature in 980-1000 DEG C with 10-15 DEG C/min of heating rate, and heated up in tube furnace
Continue to be passed through high pure nitrogen as protection gas using flow velocity 15-20ml/min in the process, after tube furnace is warming up to the temperature, stop
It is passed through nitrogen, and starts to be passed through high purity oxygen gas with flow velocity 15-20ml/min, keeps temperature 1-1.5h；
S4, tube furnace is closed, after being cooled to room temperature, the zinc oxide micrometer line taken out in quartz test tube is for use；
S5, cleaning, drying pretreatment is carried out to transparent glass substrate；
S6, it will be placed on vacuum glove box operation console by pretreated transparent glass substrate, zinc oxide micrometer line will be shifted
Marshalling on to transparent glass substrate, is allowed to come into full contact with substrate and is bonded, and instills the covering oxidation of 1-2mlPVAL glue dropwise
After zinc micro wire array surface, it is put into 60-65 DEG C of drying box and keeps 1-1.5h；
S7, the PVAL films of solidification are removed from transparent glass substrate, it is interdigital in zinc oxide micrometer line array surface deposition gold
Electrode completes the preparation of ZnO micro wire array ultraviolet detectors.
2. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：Step S1 uses distilled water, acetone, ethyl alcohol to be cleaned by ultrasonic respectively to quartz test tube and quartz boat successively, after drying
For use.
3. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：Step S5 uses distilled water, acetone, ethyl alcohol to be blown using stream of nitrogen gas after being cleaned by ultrasonic to transparent glass substrate successively
Dry, drying, which is placed in UV ozone machine, handles 30min.
4. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：The gold interdigital electrode uses stainless steel interdigital electrode as mask plate, and interdigital finger beam is 100 μm, and spacing is 100 μm,
Thickness is 100nm, totally 5 pairs it is interdigital.
5. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：In step S2,7 grams of the zinc powder that purity is 99.99% is weighed.
6. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：In step S3, tube furnace is warming up to 990 DEG C with 10-15 DEG C/min of heating rate, and held in tube furnace temperature-rise period
Continuous to be passed through high pure nitrogen as protection gas using flow velocity 15ml/min, after tube furnace is warming up to the temperature, stopping is passed through nitrogen, and
Start to be passed through high purity oxygen gas with flow velocity 15ml/min, keeps temperature 1h.
7. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：In step S6, after instilling 2mlPVAL glue covering zinc oxide micrometer line array surface dropwise, it is put into 60 DEG C of drying box
Keep 1h.
8. being embedded in the preparation method of the ZnO micro wire array ultraviolet detectors of flexible substrate, feature according to claim 1
It is：The transparent glass substrate can replace with Sapphire Substrate or quartz substrate.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109828012A (en) * | 2019-03-01 | 2019-05-31 | 广州钰芯传感科技有限公司 | A kind of preparation method and application of the coplanar integrated interdigital electrode of three electrode |
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