CN104952972A - Self-supporting CdZnTe film preparation method - Google Patents
Self-supporting CdZnTe film preparation method Download PDFInfo
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- CN104952972A CN104952972A CN201510174196.0A CN201510174196A CN104952972A CN 104952972 A CN104952972 A CN 104952972A CN 201510174196 A CN201510174196 A CN 201510174196A CN 104952972 A CN104952972 A CN 104952972A
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- 229910004611 CdZnTe Inorganic materials 0.000 title claims abstract description 135
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000859 sublimation Methods 0.000 claims abstract description 31
- 230000008022 sublimation Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 124
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000002061 vacuum sublimation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 8
- 238000005092 sublimation method Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000012958 reprocessing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Abstract
The invention discloses a self-supporting CdZnTe film preparation method. The close-spaced sublimation method is adopted to postprocess a deposited film so as to separate the film and a substrate, so that a continuous even sample is obtained. In the invention, a CdZnTe single crystal slice is adopted as a sublimation source, and ideal ohmic electrode contact is achieved by means of surface treatment. The method of the invention has the characteristics of simple process, relatively low cost, high repeatability, etc., prevents the preparation from being limited to substrate size, can be flexibly applied to a large-area low-leakage-current film of a radiation detector, and may simplify the radiation detector manufacturing technology.
Description
Technical field
The present invention relates to a kind of preparation method of inorganic non-metallic film crystal material, particularly relate to a kind of preparation method of semiconductive thin film crystalline material, be applied to the technical field of electronic components such as photovoltaic device, photodetection, pixel detector and high-energy radiation detectors.
Background technology
Tellurium zinc cadmium (CdZnTe) is direct band gap
-
compound semiconductor, this kind of material owing to having higher average atomic number and larger energy gap, so have larger absorption coefficient.In addition, the energy gap of this kind of material can along with the change of Zn component be in 1.45eV ~ 2.26eV change, and this material also has the feature of high resistivity simultaneously, and this makes the device made with CdZnTe material can have less leakage current.The feature of these excellences makes CdZnTe film gather around in photovoltaic device, photodetection, pixel detector and high-energy radiation detectors etc. to have broad application prospects.Compared to CdZnTe crystal counter, the technology of preparing of CdZnTe film is simpler, and cost is lower, easily produces by batch.
CdZnTe film can be prepared by chemical methodes such as chemical vapour deposition (CVD)s, also obtains by physical vapour deposition (PVD)s such as thermal evaporation, magnetron sputtering, close spaced sublimation methods.In these method for manufacturing thin film, close spaced sublimation method is a kind of the most promising method, and this method cost is low, speed is fast, quality good, is applicable to large-area film deposition.The CdZnTe film adopting close spaced sublimation legal system standby is polycrystal film, can obtain surfacing, the CdZnTe film that resistivity is relatively high by the condition changing preparation.
The CdZnTe film major sedimentary adopting close spaced sublimation legal system standby is on the glass or monocrystalline silicon piece of simple glass, FTO or ITO coating, and these substrates limit the size of CdZnTe film to a certain extent and apply in practical devices.
Summary of the invention
In order to solve prior art problem, the object of the invention is to the deficiency overcoming prior art existence, providing a kind of
the preparation method of self-supporting CdZnTe film, after adopting close spaced sublimation method to prepare CdZnTe film, then carry out reprocessing, by film and substrate separation, obtain the CdZnTe film of self-supporting, provide more flexible and effective technical scheme to the practical application of CdZnTe film in photoelectric detection equipment.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
A kind of
the preparation method of self-supporting CdZnTe film, comprise following process and step:
A. the preparation of CdZnTe monocrystalline sublimation source: high-purity Cd, Zn, Te are put into quartz ampoule, wherein the molar content of zinc is 2 ~ 20%, under vacuum conditions, adopts mobile heating to grow CdZnTe monocrystal, using the crystal cut that grown as sublimation source;
B. substrate pre-treatment: adopt soda-lime glass as substrate, by substrate respectively with deionized water, acetone and EtOH Sonicate cleaning 5 ~ 20 minutes, washes away impurity and the organic substance of substrate surface, puts into close spaced sublimation reative cell after oven dry;
C. CdZnTe thin film growth process: control close spaced sublimation reative cell internal gas pressure to below 1Pa, the sublimation source prepared in step a is heated to 500 ~ 650 DEG C, and the silicon after processing will be obtained in stepb to 150 ~ 550 DEG C, substrate carries out CdZnTe film growth 30 ~ 180min, prepare the CdZnTe film that thickness is 50-500mm, then CdZnTe film sample is cooled to room temperature, and CdZnTe film sample is taken out in close spaced sublimation reative cell; Preferably, the sublimation source prepared in step a is heated to 650 DEG C, and by obtaining the silicon after processing in stepb to 200 ~ 300 DEG C, substrate carries out CdZnTe film growth 120min, prepares the CdZnTe film that thickness is 90-115mm;
D. the stripping of CdZnTe film: it is in the hydrogenperoxide steam generator of 1 ~ 10% that the CdZnTe film sample prepared in stepb is immersed in mass percent, to leave standstill or with the ultrasonic 5 ~ 15min of ultrasonic cleaning instrument, take out CdZnTe film sample again and in 60 DEG C of drying boxes dry 3 ~ 5h, then touch CdZnTe film edge, CdZnTe film is peeled off from substrate;
E. the adhesion again of CdZnTe film: sticked to again in substrate by the CdZnTe film peeled off in steps d with adhesive, makes the required position used in CdZnTe film transfer to substrate, obtains CdZnTe film substrate; Adhesive preferably adopts acrylic compounds adhesive, silicone based adhesive or electroconductive resin adhesive;
F. the annealing of CdZnTe film substrate and corrosion: compound concentration is the bromine methanol solution of 0.1 ~ 0.5%, CdZnTe film substrate in step e is put into the vacuum sublimation chamber that air pressure is below 1Pa, anneal 20 ~ 60min under 200 ~ 350 ° of C, then the CdZnTe film substrate after annealing is immersed bromine methanol solution corrosion 10 ~ 60s, dry up with nitrogen again after the sample washed with de-ionized water after corrosion;
G. Ohm contact electrode and after annealing is prepared: adopt ion sputtering instrument to CdZnTe film surface deposit metal electrodes dried in step f, at the circular electrode mask plate that CdZnTe film surface putting hole hole dia is 1mm, controlling plasma sputter stream is 1 ~ 5mA, sputtering time 10 ~ 30min; Complete metal electrode preparation after, then in the vacuum environment of below 1Pa annealing in and under 200 ~ 350 ° of C anneal 10 ~ 30min; Metal electrode preferably adopts gold electrode;
H. the stripping of device: the CdZnTe film substrate sample after annealing in step g is soaked 10min in acetone, adhesive between CdZnTe film and substrate is dissolved, CdZnTe film is separated with between substrate, then take out CdZnTe film sample dry 4h at 60 DEG C, finally obtain the self-supporting CdZnTe film being combined with Ohm contact electrode functional layer.
In step e, adhesive adopts acrylic compounds adhesive, silicone based adhesive or electroconductive resin adhesive.
Metal electrode adopts gold electrode.
The present invention is based on close spaced sublimation technology, by carrying out reprocessing to post-depositional film, coming separating film and substrate, obtain the sample of continuous formation.This technique for sublimation source, is peel sample with hydrogenperoxide steam generator with CdZnTe single-crystal wafer, and obtains desirable Ohmic electrode contact by some surface treatments.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. the present invention adopts close spaced sublimation method (CSS) to be a kind of technique of practicality CdZnTe film growth, obtain the film of self-supporting, be suitable for being applied in CdTe thin film preparation, and can make that become can adhesiveness device, close spaced sublimation method CdZnTe thin film preparation process compares that CdZnTe monocrystalline growing process is simple, cost is lower, can large area preparation, batch growth feasibility high;
2. the method for stripping film of the present invention is simple, operability and repeatable high, continuous whole CdZnTe film can be obtained, and CdZnTe film can be sticked in the substrate of the required position used with common adhesive or electroconductive resin adhesive, this make the position of CdZnTe film and flexible in size variable, this kind of sample is made to be more suitable for being applied to radiation detecting device, meanwhile, this does not affect at CdZnTe film surface by anneal and the technique such as corrosion obtains good Ohm contact electrode.
Accompanying drawing explanation
fig. 1it is the CdZnTe film sample structural representation that the embodiment of the present invention one deposits preparation
figure.
fig. 2it is the signal that the embodiment of the present invention one peels off CdZnTe film
figure.
fig. 3that the radiation detector that the embodiment of the present invention one prepares CdZnTe film preparation responds the IV of X ray
figurespectrum.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
embodiment one:
In the present embodiment, see
fig. 1~
fig. 3, a kind of
the preparation method of self-supporting CdZnTe film, comprise following process and step:
A. the preparation of CdZnTe monocrystalline sublimation source: high-purity Cd, Zn, Te are put into quartz ampoule, wherein the molar content of zinc is 4%, under vacuum conditions, adopt mobile heating to grow quality is good, component distributing is relatively uniform CdZnTe monocrystal, using the crystal cut that grown as sublimation source;
B. substrate pre-treatment: adopt soda-lime glass as substrate, substrate 2 is cleaned 15 minutes with deionized water, acetone and EtOH Sonicate respectively, washes away impurity and the organic substance on substrate 2 surface, put into close spaced sublimation reative cell after oven dry;
C. CdZnTe thin film growth process: open mechanical pump and vacuumize, after close spaced sublimation reative cell internal gas pressure is evacuated to below 1Pa, close mechanical pump, the sublimation source prepared in step a is heated to 650 DEG C, and be heated to 200 DEG C by obtaining the substrate 2 after processing in stepb, carry out CdZnTe film 1 on the substrate 2 and grow 120min, prepare the CdZnTe film 1 that thickness is 90mm, see
fig. 1, then CdZnTe film sample is cooled to room temperature, closes mechanical pump, and CdZnTe film sample is taken out in close spaced sublimation reative cell;
D. the stripping of CdZnTe film: it is in the hydrogenperoxide steam generator of 3% that the CdZnTe film sample prepared in stepb is immersed in mass percent, with the ultrasonic 5min of ultrasonic cleaning instrument, take out CdZnTe film sample again and in 60 DEG C of drying boxes dry 5h, then CdZnTe film 1 edge is touched, CdZnTe film 1 is peeled off from substrate 2, obtain the CdZnTe film 1 departed from substrate 2, see
fig. 2;
E. the adhesion again of CdZnTe film: adhered to again on the glass substrate by the CdZnTe film peeled off in steps d with silicone based adhesive, makes the required position used in CdZnTe film transfer to substrate of glass, obtains CdZnTe film substrate;
F. the annealing of CdZnTe film substrate and corrosion: compound concentration is the bromine methanol solution of 0.1%, CdZnTe film substrate in step e is put into the vacuum sublimation chamber that air pressure is below 1Pa, anneal 40min under 200 ° of C, then the CdZnTe film substrate after annealing is immersed bromine methanol solution corrosion 30s, dry up with nitrogen again after the sample washed with de-ionized water after corrosion;
G. Ohm contact electrode and after annealing is prepared: adopt ion sputtering instrument to CdZnTe film surface deposited gold electrode dried in step f, at the circular electrode mask plate that CdZnTe film surface putting hole hole dia is 1mm, controlling plasma sputter stream is 5mA, sputtering time 15min; Complete gold electrode preparation after, then in the vacuum environment of below 1Pa annealing in and the 20min that anneals under 200 ° of C;
H. the stripping of device: the CdZnTe film substrate sample after annealing in step g is soaked 10min in acetone, silicone based adhesive between CdZnTe film and glass substrate is dissolved, CdZnTe film is separated with between glass substrate, then take out CdZnTe film sample dry 4h at 60 DEG C, finally obtain the self-supporting CdZnTe film being combined with ohmic contact gold electrode functional layer.
In the present embodiment, prepare a kind of CdZnTe film of self-supporting, by later stage interface processing, by CdZnTe film and substrate separation, obtain the continuous print CdZnTe film of self-supporting, and can make can adhesiveness device, make CdZnTe film be integrated in the sensitive detection parts of needles of various sizes better, and have good X-ray energy spectrum to respond, see
fig. 3.Based on common close spaced sublimation method equipment, with CdZnTe single-crystal wafer for sublimation source, with pretreated simple glass for substrate, keep certain substrate and sublimation source temperature, without working gas, directly carry out thin film deposition.Reprocessing is carried out to deposition rear film and obtains the CdZnTe film supported.The present embodiment method has that technique is simple, lower, the repeatable high of cost, can prepare and not limit by substrate dimension, flexible Application, in the film of the radiation detector of large area, low-leakage current, is expected to make the manufacturing technology of radiation detector easier.
embodiment two:
The present embodiment is substantially identical with embodiment one, and difference is:
The present embodiment
the preparation method of self-supporting CdZnTe film, comprise following process and step:
A. the preparation of CdZnTe monocrystalline sublimation source: this step is identical with embodiment one;
B. substrate pre-treatment: this step is identical with embodiment one;
C. CdZnTe thin film growth process: open mechanical pump and vacuumize, after close spaced sublimation reative cell internal gas pressure is evacuated to below 1Pa, close mechanical pump, the sublimation source prepared in step a is heated to 650 DEG C, and be heated to 300 DEG C by obtaining the substrate 2 after processing in stepb, carry out CdZnTe film growth 120min on the substrate 2, prepare the CdZnTe film 1 that thickness is 115mm, then CdZnTe film sample is cooled to room temperature, close mechanical pump, and CdZnTe film sample is taken out in close spaced sublimation reative cell;
D. the stripping of CdZnTe film: this step is identical with embodiment one;
E. the adhesion again of CdZnTe film: this step is identical with embodiment one;
F. the annealing of CdZnTe film substrate and corrosion: this step is identical with embodiment one;
G. Ohm contact electrode and after annealing is prepared: this step is identical with embodiment one;
H. the stripping of device: this step is identical with embodiment one.
Combine above
accompanying drawingthe embodiment of the present invention is illustrated, but the invention is not restricted to above-described embodiment, multiple change can also be made according to the object of innovation and creation of the present invention, change, the modification made under all Spirit Essences according to technical solution of the present invention and principle, substitute, combination, to simplify, all should be the substitute mode of equivalence, as long as goal of the invention according to the invention, only otherwise deviate from the present invention
the preparation method of self-supporting CdZnTe filmknow-why and inventive concept, all belong to protection scope of the present invention.
Claims (4)
1. a preparation method for self-supporting CdZnTe film, is characterized in that, comprises following process and step:
A. the preparation of CdZnTe monocrystalline sublimation source: high-purity Cd, Zn, Te are put into quartz ampoule, wherein the molar content of zinc is 2 ~ 20%, under vacuum conditions, adopts mobile heating to grow CdZnTe monocrystal, using the crystal cut that grown as sublimation source;
B. substrate pre-treatment: adopt soda-lime glass as substrate, by substrate respectively with deionized water, acetone and EtOH Sonicate cleaning 5 ~ 20 minutes, washes away impurity and the organic substance of substrate surface, puts into close spaced sublimation reative cell after oven dry;
C. CdZnTe thin film growth process: control close spaced sublimation reative cell internal gas pressure to below 1Pa, the sublimation source prepared in described step a is heated to 500 ~ 650 DEG C, and the silicon after processing will be obtained to 150 ~ 550 DEG C in described step b, substrate carries out CdZnTe film growth 30 ~ 180min, prepare the CdZnTe film that thickness is 50-500mm, then CdZnTe film sample is cooled to room temperature, and CdZnTe film sample is taken out in close spaced sublimation reative cell;
D. the stripping of CdZnTe film: it is in the hydrogenperoxide steam generator of 1 ~ 10% that the CdZnTe film sample prepared in described step b is immersed in mass percent, to leave standstill or with the ultrasonic 5 ~ 15min of ultrasonic cleaning instrument, take out CdZnTe film sample again and in 60 DEG C of drying boxes dry 3 ~ 5h, then touch CdZnTe film edge, CdZnTe film is peeled off from substrate;
E. the adhesion again of CdZnTe film: sticked to again in substrate by the CdZnTe film peeled off in described steps d with adhesive, makes the required position used in CdZnTe film transfer to substrate, obtains CdZnTe film substrate;
F. the annealing of CdZnTe film substrate and corrosion: compound concentration is the bromine methanol solution of 0.1 ~ 0.5%, CdZnTe film substrate in described step e is put into the vacuum sublimation chamber that air pressure is below 1Pa, anneal 20 ~ 60min under 200 ~ 350 ° of C, then the CdZnTe film substrate after annealing is immersed bromine methanol solution corrosion 10 ~ 60s, dry up with nitrogen again after the sample washed with de-ionized water after corrosion;
G. Ohm contact electrode and after annealing is prepared: adopt ion sputtering instrument to CdZnTe film surface deposit metal electrodes dried in described step f, at the circular electrode mask plate that CdZnTe film surface putting hole hole dia is 1mm, controlling plasma sputter stream is 1 ~ 5mA, sputtering time 10 ~ 30min; Complete metal electrode preparation after, then in the vacuum environment of below 1Pa annealing in and under 200 ~ 350 ° of C anneal 10 ~ 30min;
H. the stripping of device: the CdZnTe film substrate sample after annealing in step g is soaked 10min in acetone, adhesive between CdZnTe film and substrate is dissolved, CdZnTe film is separated with between substrate, then take out CdZnTe film sample dry 4h at 60 DEG C, finally obtain the self-supporting CdZnTe film being combined with Ohm contact electrode functional layer.
2. the preparation method of self-supporting CdZnTe film according to claim 1, is characterized in that: in described step e, and described adhesive adopts acrylic compounds adhesive, silicone based adhesive or electroconductive resin adhesive.
3. the preparation method of self-supporting CdZnTe film according to claim 1 or 2, is characterized in that: in described step g, and described metal electrode adopts gold electrode.
4. the preparation method of self-supporting CdZnTe film according to claim 1 or 2, it is characterized in that: in described step c, the sublimation source prepared in described step a is heated to 650 DEG C, and the silicon after processing will be obtained to 200 ~ 300 DEG C in described step b, substrate carries out CdZnTe film growth 120min, prepares the CdZnTe film that thickness is 90-115mm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109841549A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院金属研究所 | A kind of method of lossless transfer self-supporting low-dimensional materials |
| CN113181892A (en) * | 2021-04-22 | 2021-07-30 | 浙江工商大学 | Product and method for preventing algal bloom through photocatalysis |
| CN113471303A (en) * | 2021-06-15 | 2021-10-01 | 上海大学 | High-detection-efficiency self-supporting CdZnTe thick film structure, detection device, preparation method and application thereof |
| US11515172B2 (en) * | 2019-06-28 | 2022-11-29 | Flosfia Inc. | Method of etching object |
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| US20130270356A1 (en) * | 2012-04-17 | 2013-10-17 | Dow Globel Technologies LLC | Apparatus and method for producing free-standing materials |
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
| CN103500776A (en) * | 2013-09-26 | 2014-01-08 | 上海大学 | Preparation method of silica-based CdZnTe film ultraviolet light detector |
| CN103904160A (en) * | 2014-03-21 | 2014-07-02 | 上海大学 | X-ray detector manufacturing method based on CdZnTe film |
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| CN109841549A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院金属研究所 | A kind of method of lossless transfer self-supporting low-dimensional materials |
| US11515172B2 (en) * | 2019-06-28 | 2022-11-29 | Flosfia Inc. | Method of etching object |
| CN113181892A (en) * | 2021-04-22 | 2021-07-30 | 浙江工商大学 | Product and method for preventing algal bloom through photocatalysis |
| CN113471303A (en) * | 2021-06-15 | 2021-10-01 | 上海大学 | High-detection-efficiency self-supporting CdZnTe thick film structure, detection device, preparation method and application thereof |
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