CN109371378A - A method of improving transparent conductive oxide film work function - Google Patents
A method of improving transparent conductive oxide film work function Download PDFInfo
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- CN109371378A CN109371378A CN201811567532.8A CN201811567532A CN109371378A CN 109371378 A CN109371378 A CN 109371378A CN 201811567532 A CN201811567532 A CN 201811567532A CN 109371378 A CN109371378 A CN 109371378A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The present invention relates to a kind of methods for improving transparent conductive oxide film work function.This method prepares transparent conductive oxide film using physical vaporous deposition, in membrane-film preparation process, heats to substrate, and heating temperature is the secondary crystallization temperature of the transparent conductive oxide film.The method and process of raising transparent conductive oxide film work function of the invention is simple, carry out substrate heating in situ in film deposition process, it does not need to carry out other surface treatment to film or substrate, the modulation amplitude of film work function is big, and is not only applicable to a kind of transparent conductive oxide film.
Description
Technical field
The present invention relates to conductive film technical field more particularly to a kind of improve transparent conductive oxide film work function
Method.
Background technique
Transparent conductive oxide (TCO) film have excellent photoelectric properties, the research of nearly all opto-electronic device and
Preparation will be related to the selection and preparation of transparent conductive oxide film, in particular with flat-panel monitor, solar battery,
The rise and development of the industries such as intelligent window, the demand to transparent conductive oxide film are also growing day by day.
Since the work function of transparent conductive oxide film in the opto-electronic device has the interface potential barrier height of hetero-junctions
It directly affects, selects the transparent conductive oxide film of high work function that can drop its effective low boundary between organic semiconductor layer
The effect of face contact potential barrier reduces the switching voltage of current mode device, improves device, if transparent conductive oxide is in organic light emission
Application in diode (OLED).The work function of ito thin film is in 4.45eV or so, and the major part that is used for OLEDS is organic partly leads
Its HOMO energy level of body is greater than at 5.0eV generally below vacuum level, if can be further improved the TCO thin film using ITO as representative
Work content count to 5.0eV or bigger, then the injection efficiency in hole can be further improved.
Physical gas phase deposition technology indicates under vacuum conditions, using physical method, by material source-solid or liquid surface
Gaseous atom, molecule or partial ionization are gasificated into ion, and by low-pressure gas (or plasma) process, in matrix surface
The technology with the film of certain specific function is deposited, is a kind of important method for preparing TCO thin film.Physical vapour deposition (PVD) skill
The basic principle of art includes three steps: the gasification of material source；The migration of material source atom, molecule or ion；Material source atom,
The deposition of molecule or ion on matrix.The method for presently the most commonly improving TCO thin film work function, is to TCO thin film table
Face carries out soda acid processing or corona treatment.Logical peracid treatment carries out modifying interface to TCO thin film, and film work function is increased
Numerical finite, and most fatal problem is to generate etching to film surface using after pickling；It is improved by corona treatment
The work function of TCO thin film, although the work function of film is improved in very short time after the surface treatment, with
The phenomenon that appearance of its work function of the increase of exposure duration sharply declines in atmosphere, while other performances for obtaining improvement also occur
Certain ageing behavior.Therefore, the method for improving film work function at present has certain limitation, and is not sufficiently stable.
Summary of the invention
Based on this, the object of the present invention is to provide it is a kind of improve transparent conductive oxide film work function method,
Simple process, and the modulation amplitude of film work function is big.
The purpose of the present invention is what is be achieved through the following technical solutions: a kind of raising transparent conductive oxide film work function
Method substrate is heated during physical vaporous deposition prepares transparent conductive oxide film, heating temperature
For the secondary crystallization temperature of the transparent conductive oxide film.
The present invention prepares the process of film in physical vaporous deposition, heats to substrate, when substrate heating temperature compared with
When low, film is amorphous state, at this time since there are a large amount of defect, existing defects energy levels, so the work function of film in film
It is lower；With the raising of substrate heating temperature, film can start to crystallize, but since temperature at this time is still lower, crystal grain energy
Amount is insufficient, so while film has been completed to crystallize at this time, but distortion of lattice and lattice defect are still larger；When substrate heats
Temperature further increases, and can induce the secondary crystallization process of film, and the distortion of lattice inside film and lattice defect be significantly at this time
Reduce, film work function increases.Therefore, the present invention heats substrate, and selecting the secondary crystallization temperature of film is substrate
Heating temperature, and substrate is heated typically to the adhesive force increased between film and substrate or is in the prior art
In order to which the purpose for obtaining the film of crystalline state is different, but in order to greatly improve the work function of film.
Relative to the existing method for improving transparent conductive oxide film work function, method and process of the invention is simple,
It carries out substrate heating in situ in film deposition process, does not need to carry out other surface treatment to film or substrate, it can
Greatly to improve the work function of transparent conductive oxide film, and it is thin not to be only applicable to a kind of transparent conductive oxide
Film.
Further, during physical vaporous deposition prepares transparent conductive oxide film, material source and substrate
The distance between select the maximum value that can be realized of equipment.The distance between material source and substrate select equipment to can be realized most
Big value, can increase the defects of plated film, distortion of lattice and membrane stress, reduce the secondary crystallization temperature of film.
Further, the physical vaporous deposition uses magnetron sputtering method, thermal evaporation or electron beam evaporation method.
Further, transparent conductive oxide film is prepared using magnetron sputtering method, comprising the following steps:
S1: substrate is cleaned, is dried；
S2: the substrate after drying is put into magnetron sputtering chamber, is vacuumized, the distance between target and substrate are set as magnetic control
The maximum value that can be realized in sputtering chamber；
S3: being passed through argon gas, opens grid bias power supply, carries out prerinse to substrate；
S4: closing grid bias power supply, heat to substrate, and heating temperature is the secondary crystallization of transparent conductive oxide film
Temperature；
S5: radio-frequency power supply sputtering target material is utilized, the target atom or molecule sputtered deposits in substrate forms film；
S6: stopping is passed through argon gas, stops substrate heating, cools down the film being deposited in substrate in a vacuum, to make
Obtain transparent conductive oxide film.
Further, in step S1, successively substrate is cleaned by ultrasonic using acetone, ethyl alcohol, deionized water.
Further, in step S2, the distance between target and substrate are 11~13cm.
Further, in step S3, the flow for being passed through argon gas is 30~35sccm；In step S4, it is passed through the flow of argon gas
For 0sccm；In step S5, the flow for being passed through argon gas is 15~20sccm.
Further, in step S4, the heating rate heated to substrate is 50~60 DEG C/min.
Further, the transparent conductive oxide film is ito thin film, and secondary crystallization temperature is 300 DEG C.
Further, the transparent conductive oxide film is SnO2Film, secondary crystallization temperature are 200 DEG C.
In order to better understand and implement, the invention will now be described in detail with reference to the accompanying drawings.
Detailed description of the invention
Fig. 1 is ITO (In obtained under different base heating temperature condition in embodiment 10.9Sn0.1O) the SEM test of film
As a result, wherein (a), (b), (c), (d) and (e) corresponding temperature are 25 DEG C, 100 DEG C, 200 DEG C, 300 DEG C and 400 DEG C.
Fig. 2 is ITO (In obtained under different base heating temperature condition in embodiment 10.9Sn0.1O) the XRD test of film
As a result.
Fig. 3 is ITO (In obtained under different base heating temperature condition in embodiment 10.9Sn0.1O) the UPS test of film
As a result.
Fig. 4 is SnO obtained under different base heating temperature condition in embodiment 22The SEM test result of film, wherein
(a), (b), (c), (d) and (e) corresponding temperature are 25 DEG C, 100 DEG C, 200 DEG C, 300 DEG C and 400 DEG C.
Fig. 5 is SnO obtained under different base heating temperature condition in embodiment 22The XRD test result of film.
Fig. 6 is SnO obtained under different base heating temperature condition in embodiment 22The UPS test result of film.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, and does not have to
It is of the invention in limiting.In addition, as long as technical characteristic involved in the various embodiments of the present invention described below is each other
Between do not constitute conflict and can be combined with each other.
Embodiment 1
The present embodiment prepares ITO (In using magnetron sputtering method in n-type silicon chip substrate0.9Sn0.1O) film, detailed process
The following steps are included:
(1) ultrasonic cleaning of each 20min is successively carried out to silicon wafer substrate using acetone, ethyl alcohol, deionized water；
(2) oven temperature is controlled at 70 DEG C, 1h dries substrate；
(3) substrate after drying is put into magnetron sputtering chamber, Chamber vacuum is evacuated to 6 × 10-4Pa, target and substrate it
Between distance be set as the maximum value that equipment can be realized, be 12cm；
(4) it is passed through 30sccm argon gas, control grid bias power supply is 850V, waits 15min, carries out the pre-cleaning process of substrate；
(5) grid bias power supply is closed, 0sccm is set by argon flow, base reservoir temperature is set as 300 DEG C, heating rate is
55.2 DEG C/min, 5~10min is waited to stablize temperature；
(6) setting argon flow is 15sccm, prepares ito thin film using radio-frequency power supply sputtering target material, sputtering power is
120W, sputtering time 15min, ito thin film thickness obtained is in 100nm or so；
(7) stop being passed through argon gas, stop substrate heating, so that film is carried out Temperature fall under vacuum, rate of temperature fall is about
0.5 DEG C/min, near room temperature to be down to takes out film, that is, completes the preparation of film.
In addition, the comparison as the present embodiment, is set to room temperature (25 DEG C), 100 DEG C, 200 DEG C, 400 for base reservoir temperature
DEG C, other preparation process are constant, to obtain the ito thin film prepared under the conditions of different base temperature.
Fig. 1-3 is please referred to, is SEM, XRD and UPS test result of ito thin film made from the present embodiment, and by this reality
Ito thin film made from example is applied to compare with ito thin film obtained under other substrate heating temperatures.Experiment used by each test
Equipment and test condition are respectively as follows: SEM:jsm-7500f, test condition: 50,000 times of amplification；XRD:x'pert pro, Holland think hundred
Ji company, test angle: 10-80, test rate: 3.5 °/min；UPS:Thermo Fischer, ESCALAB 250Xi.
The surface topography of ito thin film and crystal structure development process from Fig. 1 and Fig. 2, it is known that method through this embodiment
The crystallization for the first time for the ito thin film being prepared is near 100 DEG C, and its secondary crystallization nearby starts at 300 DEG C, secondary knot
After the completion of crystalline substance (when substrate heating temperature reaches 400 DEG C), the crystal structure of film does not change, but crystallinity weakens, and
And film morphology varies widely before and after secondary crystallization.This is because secondary crystallization be material after the completion of crystallizing for the first time,
The secondary crystallization occurred under serious situation is still compared in distortion of lattice in material, after the completion of secondary crystallization, the original crystalline substance of material
Body structure will not change, but Crystal can become, and the grain shape of material can be made more uniform after the completion of secondary crystallization,
The defects of film and residual stress greatly reduce.
From the figure 3, it may be seen that when substrate heating temperature is respectively 25 DEG C, 100 DEG C, 200 DEG C, 300 DEG C and 400 DEG C, it is obtained
The work function of ito thin film is respectively 4.4eV, 4.51eV, 4.46eV, 6.12eV and 4.37eV, and comparison is as it can be seen that when substrate heating temperature
Degree is 300 DEG C, as the secondary crystallization temperature of ito thin film when, work function is maximum, is 6.12eV, to be much higher than other substrates
The work function of ito thin film under heating temperature.
Embodiment 2
The present embodiment prepares SnO in n-type silicon chip substrate using magnetron sputtering method2Film, detailed process include following step
It is rapid:
(1) ultrasonic cleaning of each 20min is successively carried out to silicon wafer substrate using acetone, ethyl alcohol, deionized water；
(2) oven temperature is controlled at 70 DEG C, 1h dries substrate；
(3) substrate after drying is put into magnetron sputtering chamber, Chamber vacuum is evacuated to 6 × 10-4Pa, target and substrate it
Between distance be set as the maximum value that equipment can be realized, be 12cm；
(4) it is passed through 30sccm argon gas, control grid bias power supply is 850V, waits 15min, carries out the pre-cleaning process of substrate；
(5) grid bias power supply is closed, 0sccm is set by argon flow, base reservoir temperature is set as 200 DEG C, heating rate is
55.2 DEG C/min, 5~10min is waited to stablize temperature；
(6) setting argon flow is 15sccm, prepares SnO using radio-frequency power supply sputtering target material2Film, sputtering power are
80W, sputtering time 15min, SnO obtained2Film thickness is in 100nm or so；
(7) stop being passed through argon gas, stop substrate heating, so that film is carried out Temperature fall under vacuum, rate of temperature fall is about
0.5 DEG C/min, near room temperature to be down to takes out film, that is, completes the preparation of film.
In addition, the comparison as the present embodiment, is set to room temperature (25 DEG C), 100 DEG C, 300 DEG C, 400 for base reservoir temperature
DEG C, other preparation process are constant, to obtain the SnO prepared under the conditions of different base temperature2Film.
Fig. 4-6 is please referred to, is SnO made from the present embodiment2SEM, XRD and UPS test result of film, and by this reality
Apply SnO made from example2SnO obtained under film and other substrate heating temperatures2Film compares.It is real used by each test
It tests equipment and test condition is respectively as follows: SEM:jsm-7500f, test condition: 50,000 times of amplification；XRD:x'pert pro, Holland think
Hundred lucky companies, test angle: 10-80 °, test rate: 3.5 °/min；UPS:ThermoFischer, ESCALAB 250Xi.
The SnO from Fig. 4 and Fig. 52Surface topography and crystal structure the development process of film, it is known that method through this embodiment
The SnO being prepared2The crystallization for the first time of film is near 100 DEG C, and its secondary crystallization nearby starts at 200 DEG C, secondary
After the completion of crystallization (when substrate heating temperature reaches 300 DEG C), the crystal structure of film does not change, but crystallinity weakens,
And film morphology varies widely before and after secondary crystallization.This is because secondary crystallization is that material is completed in crystallization for the first time
Afterwards, the secondary crystallization occurred under serious situation is still compared in the distortion of lattice in material, and after the completion of secondary crystallization, material is original
Crystal structure will not change, but Crystal can become, and the grain shape of material can be made more equal after the completion of secondary crystallization
Even, the defects of film and residual stress greatly reduce.
It will be appreciated from fig. 6 that when substrate heating temperature is respectively 25 DEG C, 100 DEG C, 200 DEG C, 300 DEG C and 400 DEG C, it is obtained
SnO2The work function of film is respectively 3.6eV, 3.6eV, 4.4eV, 4.1eV and 4.1eV, and comparison is as it can be seen that work as substrate heating temperature
For 200 DEG C, as SnO2When the secondary crystallization temperature of film, work function is maximum, is 4.4eV, is higher than the heating of other substrates
At a temperature of SnO2The work function of film.
Compared with the existing technology, the method and process of raising transparent conductive oxide film work function of the invention is simple,
Substrate heating is carried out in film deposition process in situ, does not need to carry out other surface treatment to film or substrate, it can be with
The work function of transparent conductive oxide film is greatly improved, and is not only applicable to a kind of transparent conductive oxide film,
There is important directive significance in field of photoelectric devices.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.
Claims (10)
1. a kind of method for improving transparent conductive oxide film work function, which is characterized in that prepared in physical vaporous deposition
During transparent conductive oxide film, substrate is heated, heating temperature is the transparent conductive oxide film
Secondary crystallization temperature.
2. the method according to claim 1 for improving transparent conductive oxide film work function, which is characterized in that in physics
During vapour deposition process prepares transparent conductive oxide film, the distance between material source and substrate select equipment can be real
Existing maximum value.
3. the method according to claim 1 for improving transparent conductive oxide film work function, which is characterized in that the object
Physical vapor deposition method uses magnetron sputtering method, thermal evaporation or electron beam evaporation method.
4. the method according to claim 3 for improving transparent conductive oxide film work function, which is characterized in that use magnetic
Control sputtering method prepares transparent conductive oxide film, comprising the following steps:
S1: substrate is cleaned, is dried；
S2: the substrate after drying is put into magnetron sputtering chamber, is vacuumized, the distance between target and substrate are set as magnetron sputtering
The maximum value that can be realized in chamber；
S3: being passed through argon gas, opens grid bias power supply, carries out prerinse to substrate；
S4: closing grid bias power supply, heat to substrate, and heating temperature is the secondary crystallization temperature of transparent conductive oxide film
Degree；
S5: radio-frequency power supply sputtering target material is utilized, the target atom or molecule sputtered deposits in substrate forms film；
S6: stopping is passed through argon gas, stops substrate heating, cools down the film being deposited in substrate in a vacuum, to be made saturating
Bright conductive oxide film.
5. the method according to claim 4 for improving transparent conductive oxide film work function, which is characterized in that step S1
In, successively substrate is cleaned by ultrasonic using acetone, ethyl alcohol, deionized water.
6. the method according to claim 4 for improving transparent conductive oxide film work function, which is characterized in that step S2
In, the distance between target and substrate are 11~13cm.
7. the method according to claim 6 for improving transparent conductive oxide film work function, which is characterized in that step S3
In, the flow for being passed through argon gas is 30~35sccm；In step S4, the flow for being passed through argon gas is 0sccm；In step S5, it is passed through argon
The flow of gas is 15~20sccm.
8. the method according to claim 7 for improving transparent conductive oxide film work function, which is characterized in that step S4
In, the heating rate heated to substrate is 50~60 DEG C/min.
9. the method according to claim 8 for improving transparent conductive oxide film work function, which is characterized in that described
Bright conductive oxide film is ito thin film, and secondary crystallization temperature is 300 DEG C.
10. the method according to claim 8 for improving transparent conductive oxide film work function, which is characterized in that described
Transparent conductive oxide film is SnO2Film, secondary crystallization temperature are 200 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114481068A (en) * | 2022-01-27 | 2022-05-13 | 上海华力集成电路制造有限公司 | Method for protecting work function metal layer |
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| WO2006003579A1 (en) * | 2004-06-28 | 2006-01-12 | Koninklijke Philips Electronics N.V. | Field effect transistor method and device |
| CN102134699A (en) * | 2011-02-24 | 2011-07-27 | 海洋王照明科技股份有限公司 | Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof |
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| CN114481068A (en) * | 2022-01-27 | 2022-05-13 | 上海华力集成电路制造有限公司 | Method for protecting work function metal layer |
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Application publication date: 20190222 |