CN104752136B - A kind of plasma processing apparatus and its electrostatic chuck - Google Patents
A kind of plasma processing apparatus and its electrostatic chuck Download PDFInfo
- Publication number
- CN104752136B CN104752136B CN201310745011.8A CN201310745011A CN104752136B CN 104752136 B CN104752136 B CN 104752136B CN 201310745011 A CN201310745011 A CN 201310745011A CN 104752136 B CN104752136 B CN 104752136B
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- CN
- China
- Prior art keywords
- thermal conductivity
- heat
- conductivity region
- conducting layer
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The present invention provides a kind of plasma processing apparatus and its electrostatic chuck,The electrostatic chuck includes insulating barrier and the heat-conducting layer being arranged on below insulating barrier,The heat-conducting layer lower section sets heater,The heat-conducting layer includes the first thermal conductivity region and the second thermal conductivity region,Second thermal conductivity region is set around first thermal conductivity region,First thermal conductivity region is different with the heat-conducting layer thickness where second thermal conductivity region,Because heat-conducting layer thickness is different,The speed of its conduction heat is different,Realization is rapidly heated or lowers the temperature to electrostatic chuck subregion,To reach with other regional temperatures uniformly or with the poor purpose of uniform temperature,The invention provides a kind of scheme of zonal control electrostatic chuck temperature,Realize another regulation scheme in addition to the heating power supply of regulation heater,Can be with the heating power supply coordinated of regulation heater,Realize the temperature control of electrostatic chuck.
Description
Technical field
The present invention relates to semiconducter process, more specifically to a kind of electrostatic chuck technical field of heating.
Background technology
In the technical process such as plasma etching or chemical vapor deposition, frequently with electrostatic chuck（Electro
Static Chuck, abbreviation ESC）Workpiece is waited to fix, support and transmit substrate (Wafer).Electrostatic chuck is arranged at instead
In answering chamber, it is by the way of electrostatic attraction, and non-mechanical means fix substrate, can reduce machinery possible to substrate and damage
Lose, and electrostatic chuck is completely attached to substrate, be conducive to heat transfer.
Existing electrostatic chuck generally includes insulating barrier and zone of heating, and DC electrode is provided with insulating barrier, the DC electrode
Electrostatic attraction is applied to substrate after energization；To make electrostatic chuck that there is sufficiently large programming rate, and then improve substrate etching
Uniformity, insulating barrier lower section sets a zone of heating, and heater is provided with zone of heating, is used to heat substrate by electrostatic chuck；
Zone of heating lower section sets a pedestal, and pedestal is provided with cooling liquid flowing channel, and its injection coolant is cooled down to electrostatic chuck.
In the prior art, because the area of electrostatic chuck is larger, while electrostatic chuck is rapidly heated, it is difficult to ensure that quiet
The homogeneity of each regional temperature of electric card disk, the temperature of different zones has obvious difference and even forms cold-zone and hot-zone, leads
Heating of the cause electrostatic chuck to substrate is uneven, and the technological effect that plasma is etched is brought bad influence by this.It is existing
Technology heats uneven technical problem to solve electrostatic chuck, can be by zone of heating zonal control, but in some plasmas
In body processing unit, zone of heating zonal control only can not be fully solved electrostatic chuck temperature problem pockety.
The content of the invention
It is an object of the invention to provide a kind of electrostatic chuck, including a built-in DC electrode insulating barrier and positioned at insulation
Heat-conducting layer below layer, the heat-conducting layer includes the first thermal conductivity region and the second thermal conductivity region, and second thermal conductivity region surround
First thermal conductivity region is set, and first thermal conductivity region is different with the heat-conducting layer thickness where second thermal conductivity region.
Preferably, the first thermal conductivity region lower section of the heat-conducting layer sets first heater, the second of the heat-conducting layer
Thermal conductivity region lower section sets secondary heating mechanism.
Preferably, the heat-conducting layer material is aluminum or aluminum alloy or aluminium nitride.
Preferably, the heat-conducting layer thickness where first thermal conductivity region is more than the heat conduction where second thermal conductivity region
Thickness degree.
Preferably, the heat-conducting layer thickness where first thermal conductivity region is less than the heat conduction where second thermal conductivity region
Thickness degree.
Preferably, the heat-conducting layer also includes the 3rd thermal conductivity region, and the 3rd thermal conductivity region is around second heat conduction
Region is set, and the 3rd thermal conductivity region lower section sets the 3rd heater.
Preferably, the thickness of heat-conducting layer and first thermal conductivity region and the second thermal conductive zone where the 3rd thermal conductivity region
Heat-conducting layer thickness where domain is identical or differs.
Preferably, the heater includes the insulating barrier of heater strip and the parcel heater strip.
Further, the invention also discloses a kind of plasma processing apparatus, including a vacuum reaction chamber, it is described true
Empty reaction chamber lower section sets the pedestal of an electrostatic chuck and the support electrostatic chuck, it is characterised in that：The electrostatic chuck
Insulating barrier including a built-in DC electrode and the heat-conducting layer below insulating barrier, the heat-conducting layer include the first thermal conductivity region
With the second thermal conductivity region, second thermal conductivity region is around first thermal conductivity region setting, first thermal conductivity region and institute
Heat-conducting layer thickness where stating the second thermal conductivity region is different.
Preferably, the supporting layer that metal material or ceramic material are formed is set between the heater and the pedestal.
Preferably, described plasma processing apparatus are capacitive coupling plasma processing apparatus or inductive type
Plasma processing apparatus.
The advantage of the invention is that：The present invention provides a kind of plasma processing apparatus and its electrostatic chuck, the electrostatic
Chuck includes insulating barrier and the heat-conducting layer being arranged on below insulating barrier, and the heat-conducting layer lower section sets heater, the heat conduction
Layer includes the first thermal conductivity region and the second thermal conductivity region, and second thermal conductivity region is set around first thermal conductivity region, institute
State the first thermal conductivity region different with the heat-conducting layer thickness where second thermal conductivity region, because heat-conducting layer thickness is different, its biography
The speed of heat conduction is different, and realization is rapidly heated or lowers the temperature to electrostatic chuck subregion, uniform with other regional temperatures to reach
Or the purpose with uniform temperature difference, the invention provides a kind of scheme of zonal control electrostatic chuck temperature, realize except tune
Save heater heating power supply outside another regulation scheme, can with regulation heater heating power supply coordinated,
Realize the temperature control of electrostatic chuck.
Brief description of the drawings
Fig. 1 shows plasma-reaction-chamber structural representation of the present invention；
Fig. 2 shows electrostatic chuck of the present invention and below base construction schematic diagram；
Fig. 3 shows electrostatic chuck described in another embodiment of the present invention and below base construction schematic diagram.
Specific embodiment
Below in conjunction with the accompanying drawings, specific embodiment of the invention is described in further detail.
Technical solutions according to the invention are applied to capacitive coupling plasma reative cell or inductive type plasma
Precursor reactant room, and other heat the plasma-reaction-chamber of pending substrate temperature using electrostatic chuck.Exemplary, Fig. 1
Plasma-reaction-chamber structural representation of the present invention is shown；The plasma-reaction-chamber is capacitive coupling plasma
Reative cell, those skilled in the art are belonged to by the technical scheme that the present invention is disclosed without the deformation that performing creative labour is made
In protection scope of the present invention.
Fig. 1 shows a kind of plasma-reaction-chamber structural representation, including a substantially cylindrical reaction chamber 100, instead
Answer and set in chamber 100 corresponding Top electrode 150 and bottom electrode 110 up and down, the connection gas supply device 130 of Top electrode 150, upper electricity
Pole 150 simultaneously as reacting gas even into plasm reaction cavity gas distribution grid；Bottom electrode 110 connects radio-frequency power
Source 170, its upper support electrostatic chuck 120, electrostatic chuck 120 is used to support substrate 140.Plasma is anti-described in the present embodiment
The operation principle for answering room is, Top electrode 150 and bottom electrode 110 are in the presence of radio-frequency power to injection plasm reaction cavity
100 gas is dissociated, and generates plasma 160, and plasma 160 carries out physical bombardment or chemical reaction to substrate 140,
Realize the working process to substrate 140.Reacted accessory substance and unexhausted gas discharge plasma by aspiration pump 180
Reaction chamber 100.
Fig. 2 shows electrostatic chuck of the present invention and the below structural representation of pedestal.As shown in Fig. 2 electrostatic chuck
120 located at the top of pedestal 110, for carrying substrates 140.Cooling liquid flowing channel 115 is provided with pedestal 110, injection is commonly used for
Coolant is cooled down to electrostatic chuck.Electrostatic chuck 120 includes insulating barrier 121 and is arranged at the heat conduction of the lower section of insulating barrier 121
Layer 122, the embedded DC electrode 124 in the inside of insulating barrier 121, DC electrode connects a dc source（Not shown in figure）, direct current
Source acts on DC electrode 124 and produces electrostatic attraction on the surface of electrostatic chuck 120, for fixing substrate 140.Under insulating barrier 121
Side sets heat-conducting layer 122, and the material of heat-conducting layer 122 can be metal material or ceramic material, such as aluminium or aluminum oxide, or
The materials such as aluminium nitride.Heat-conducting layer 122 includes the first thermal conductivity region 1221 and around first thermal conductivity region in the present embodiment
Second thermal conductivity region 1222, the lower section of the heat-conducting layer 122 sets heater 125, the heater 125 and pedestal 110 it
Between also include a supporting layer 123, the material of the supporting layer 123 can be metal material or ceramic material, and it can be with heat conduction
Layer material is identical, it is also possible to differ.Vacuum reaction chamber 100 heats substrate 140 by electrostatic chuck 120, facilitate substrate with
Plasma in reaction chamber is reacted, so as to realize the processing and manufacturing to substrate.Corresponding to the first thermal conductivity region 1221
With the second thermal conductivity region 1222, heater 125 below includes at least first heater 1251 and secondary heating mechanism
1252.With the development of semi-conductor industry, the size of substrate is increasing, the electrostatic chuck 120 for supporting fixed substrate 140
Size it is also increasing, as the change of electrostatic chuck size is big, whether uniform the temperature of electrostatic chuck is just into controlling to etch
Can technique be smoothed out key factor.In the present embodiment, the heater is set to the first of independent control temperature
Heater 1251 and secondary heating mechanism 1252, secondary heating mechanism 1252 are set around the first heater 1251.
As seen from Figure 2, the heat conduction at the first thermal conductivity region 1221 of heat-conducting layer 122 and the place of the second thermal conductivity region 1222
The thickness of layer is not identical, and in the present embodiment, the zone of heating thickness of the first thermal conductivity region 1221 is more than the second thermal conductivity region
1222 zone of heating thickness, the distance that corresponding secondary heating mechanism arrives the insulating barrier 121 of electrostatic chuck in vertical direction is small
In the distance of first heater 1251 to electrostatic chuck insulating barrier 121, because the thickness of heat-conducting layer 122 is different, its conduction by
Heater 125 produces the speed of heat different, and due to first heater 1251 and the temperature of secondary heating mechanism 1252
Can individually control to adjust, in etching technics, in order to accurately adjust the temperature homogeneity of electrostatic chuck 120, except that can lead to
Cross and be respectively provided with the temperature of first heater 1251 and secondary heating mechanism 1252 and be adjusted, can also be by setting first
The different-thickness of the heat-conducting layer of thermal conductivity region 1221 and the heat-conducting layer of the second thermal conductivity region 1222 is adjusted.By to first heater
1251 and the heating power of secondary heating mechanism 1252 carry out synergic adjustment with the thickness of its corresponding heat-conducting layer in top, effectively
The temperature homogeneity of electrostatic chuck 120 is have adjusted, especially for the electrostatic chuck that some diameter dimensions are larger, with obvious
Effect.
Processed for the ease of fixed, one layer of gluing layer is set between insulating barrier 121 and heat-conducting layer 122, due to cohering thickness
Degree very little, is shown in accompanying drawing of the present invention 2.Because heat-conducting layer 122 needs to cohere fixation with insulating barrier 121, heat conduction is kept
Flat being better achieved in the upper surface of layer 122 is cohered with insulating barrier 121.On the different heating device of electrostatic chuck 120
When the variable thickness of the corresponding heat-conducting layer 122 in side is caused, keep upper surface flat so that upper surface better by gluing layer with it is exhausted
Edge layer coheres fixation, and because the lower surface of heat-conducting layer 122 is connected with the heater of subregion, heater is generally by heat-conducting layer 122
With the clamping of supporting layer 123 in centre, making can be easily processed.Heater 125 includes heater strip and is wrapped in add
Insulating materials outside heated filament, individual in certain embodiments, heater 125 can first be fitted in the lower surface of heat-conducting layer 122, then
It is connected with supporting layer 123 again.
Except the implementation exception shown in Fig. 2, technical solutions according to the invention also include other embodiment.Fig. 3 shows this
Invent the electrostatic chuck structural representation of another embodiment.In the embodiment shown in fig. 3, heat-conducting layer 222 includes the first heat conduction
Region 2221, the second thermal conductivity region 2222 and the 3rd thermal conductivity region 2223, the second thermal conductivity region 2222 is around the first thermal conductivity region
2221 are set, and the 3rd thermal conductivity region 2223 is set around the second thermal conductivity region 2222, corresponding, the heater below heat-conducting layer
225 include first heater 2251, and the heater 2253 of secondary heating mechanism 2252 and the 3rd, above three heater is arrived
Heat-conducting layer 222 is set between insulating barrier 221, and the thickness of the heat-conducting layer above different heating device is different.Three heater temperature
Degree can be with independent control.In the present embodiment, the heat-conducting layer thickness of the top of first heater 2251 is more than secondary heating mechanism
The heat-conducting layer thickness of 2252 tops, the heat-conducting layer thickness of the top of secondary heating mechanism 2252 is more than the heat conduction above the 3rd heating zone
Thickness degree.Because the handling process carried out in plasm reaction cavity is different, Temperature Distribution on electrostatic chuck by wait from
The influence of other specification is not quite similar in daughter reaction chamber, therefore the setting of the thickness of heat-conducting layer 222 of electrostatic chuck can be with difference
In above-described embodiment.In some embodiments it is possible to the thickness for setting the heat-conducting layer above the heater of central area is less than
The heat-conducting layer thickness of fringe region.Concrete condition is specifically set according to the situation in plasm reaction cavity, it is impossible to be confined to
Embodiment is stated, the miscellaneous part of the present embodiment indicates same above-described embodiment, to be different from above-described embodiment, 1xx is denoted as
2xx, concrete operating principle ibid, will not be repeated here.
Heat-conducting layer of the present invention can be aluminium or aluminium alloy, or other hot good conductor materials, or
It is the materials such as aluminium nitride.Thickness using heat-conducting layer is different, and heat transfer rate is different, realizes the temperature even regulation of electrostatic chuck,
For the temperature adjustment of electrostatic chuck increased the new approach in addition to the heating power supply of regulation heater.Can be with cooperation
Temperature to electrostatic chuck is adjusted.In order to realize the temperature even regulation of electrostatic chuck, set near each heater
One temperature element（Not shown in figure）, one temperature control system of some temperature elements connections（Not shown in figure）, by temperature
Control system unification is adjusted control, realizes the regulation uniform purpose of electrostatic chuck temperature.
It is same make electrostatic chuck be rapidly heated according to the plasma processing apparatus that the above embodiment of the present invention is provided
When, the homogeneity of its each regional temperature is effectively ensured, so that each regional temperature of substrate is homogeneous, be conducive to corona treatment work
The carrying out of skill, improves the passing rate of processing of substrate.
Above-described is only the preferred embodiments of the present invention, and the embodiment simultaneously is not used to limit patent guarantor of the invention
Shield scope, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in
In protection scope of the present invention.
Claims (11)
1. a kind of electrostatic chuck, it is characterised in that：The electrostatic chuck includes the insulating barrier of a built-in DC electrode and positioned at exhausted
Heat-conducting layer below edge layer, heat-conducting layer lower section is provided with heater, and the heat-conducting layer includes the first thermal conductivity region and the
Two thermal conductivity regions, second thermal conductivity region is set around first thermal conductivity region, first thermal conductivity region and described the
Heat-conducting layer thickness where two thermal conductivity regions is different so that the upper surface of the heater at different zones is different
Highly.
2. electrostatic chuck according to claim 1, it is characterised in that：The first thermal conductivity region lower section of the heat-conducting layer is set
First heater, the second thermal conductivity region lower section of the heat-conducting layer sets secondary heating mechanism.
3. electrostatic chuck according to claim 1, it is characterised in that：The heat-conducting layer material is aluminum or aluminum alloy or nitridation
Aluminium.
4. electrostatic chuck according to claim 1, it is characterised in that：Heat-conducting layer thickness where first thermal conductivity region
More than the heat-conducting layer thickness where second thermal conductivity region.
5. electrostatic chuck according to claim 1, it is characterised in that：Heat-conducting layer thickness where first thermal conductivity region
Less than the heat-conducting layer thickness where second thermal conductivity region.
6. electrostatic chuck according to claim 1, it is characterised in that：The heat-conducting layer also includes the 3rd thermal conductivity region, institute
State the 3rd thermal conductivity region to be set around second thermal conductivity region, the 3rd thermal conductivity region lower section sets the 3rd heater.
7. electrostatic chuck according to claim 6, it is characterised in that：The thickness of heat-conducting layer where 3rd thermal conductivity region
It is identical or differs with first thermal conductivity region and the second thermal conductivity region place heat-conducting layer thickness.
8. electrostatic chuck according to claim 1, it is characterised in that：The heater includes that heater strip and parcel are described
The insulating barrier of heater strip.
9. a kind of plasma processing apparatus, it is characterised in that：Including a reaction chamber, it is quiet that the reaction chamber lower section sets one
The pedestal of electric card disk and the support electrostatic chuck, it is characterised in that：The electrostatic chuck includes the exhausted of a built-in DC electrode
Edge layer and the heat-conducting layer below insulating barrier, the heat-conducting layer lower section are provided with heater, and the heat-conducting layer includes first
Thermal conductivity region and the second thermal conductivity region, second thermal conductivity region are set around first thermal conductivity region, first heat conduction
Region is different with the heat-conducting layer thickness where second thermal conductivity region so that the upper table of the heater at different zones
Face is in different height.
10. plasma processing apparatus according to claim 9, it is characterised in that：The heater and the pedestal
Between the supporting layer that metal material or ceramic material are formed is set.
11. plasma processing apparatus according to claim 9, it is characterised in that：Described plasma processing apparatus
It is capacitive coupling plasma processing apparatus or device for processing inductive coupling plasmas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310745011.8A CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
| TW103142797A TW201541536A (en) | 2013-12-30 | 2014-12-09 | Plasma processing apparatus and electrostatic chuck thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310745011.8A CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752136A CN104752136A (en) | 2015-07-01 |
| CN104752136B true CN104752136B (en) | 2017-06-27 |
Family
ID=53591661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310745011.8A Active CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104752136B (en) |
| TW (1) | TW201541536A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898574A (en) * | 2015-12-17 | 2017-06-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck mechanism and semiconductor processing equipment |
| CN108054087B (en) * | 2017-12-07 | 2020-05-29 | 德淮半导体有限公司 | Annealing device and annealing method in wafer bonding |
| CN109285923A (en) * | 2018-10-22 | 2019-01-29 | 天马微电子股份有限公司 | Microdevice roller mould and microdevice transfer method |
| CN111383882B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate holder for the same |
| CN111383885B (en) * | 2018-12-27 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN114496692B (en) * | 2020-11-11 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Heating assembly, substrate bearing assembly and plasma processing device thereof |
| CN113110644B (en) * | 2021-04-26 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Temperature control method and temperature control system for electrostatic chuck |
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|---|---|---|---|---|
| CN101278368A (en) * | 2005-09-30 | 2008-10-01 | 朗姆研究公司 | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101728297A (en) * | 2008-10-28 | 2010-06-09 | 周星工程股份有限公司 | Electrostatic chucking apparatus and method for manufacturing the same |
| CN202332816U (en) * | 2011-11-23 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Electrostatic chuck forming subareas by different materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316298A (en) * | 1995-05-11 | 1996-11-29 | Souzou Kagaku:Kk | Electrostatic chuck |
| KR101074458B1 (en) * | 2009-06-11 | 2011-10-18 | 세메스 주식회사 | Substrate heating unit and substrate treating apparatus including the unit |
-
2013
- 2013-12-30 CN CN201310745011.8A patent/CN104752136B/en active Active
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2014
- 2014-12-09 TW TW103142797A patent/TW201541536A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101278368A (en) * | 2005-09-30 | 2008-10-01 | 朗姆研究公司 | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101728297A (en) * | 2008-10-28 | 2010-06-09 | 周星工程股份有限公司 | Electrostatic chucking apparatus and method for manufacturing the same |
| CN202332816U (en) * | 2011-11-23 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Electrostatic chuck forming subareas by different materials |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI575636B (en) | 2017-03-21 |
| CN104752136A (en) | 2015-07-01 |
| TW201541536A (en) | 2015-11-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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