CN104167343B - Plasma processing apparatus and radio-frequency shielding fence thereof - Google Patents
Plasma processing apparatus and radio-frequency shielding fence thereof Download PDFInfo
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- CN104167343B CN104167343B CN201310183046.7A CN201310183046A CN104167343B CN 104167343 B CN104167343 B CN 104167343B CN 201310183046 A CN201310183046 A CN 201310183046A CN 104167343 B CN104167343 B CN 104167343B
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Abstract
The invention provides a kind of plasma processing apparatus and radio-frequency shielding fence thereof, wherein, described plasma processing apparatus includes the base station of a placement substrate, described radio-frequency shielding fence is arranged at below described base station, it is characterized in that, described radio-frequency shielding fence includes: the inner shell of tubbiness and shell, and described inner shell is positioned among shell；At least one barricade, it is arranged among described inner shell, and in order to isolate the some wires being contained in described inner shell, wherein, described inner shell is that conductive material is made, and radio frequency power source energy is connected to described plasma processing apparatus by described inner shell.The present invention is it can be avoided that the mutual crosstalk of the assembly such as temperature pilot and DC source wire in radio-frequency shielding fence.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of plasma processing apparatus and radio-frequency shielding fence thereof.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is to pass into the reacting gas containing suitable etchant source gas in vacuum reaction chamber, then again this vacuum reaction chamber is carried out radio-frequency (RF) energy input, with activated reactive gas, excite and maintain plasma, so that the material layer on etching substrate surface or over the substrate surface depositing layer of material respectively, and then semiconductor chip and plasma flat-plate are processed.
It is strict vacuum environment in the chamber of plasma processing apparatus, and radio-frequency (RF) energy is the lower section from plasma processing apparatus is coupled into reaction chamber.Other assemblies such as wire electric wire needed for other processing procedures are also had below plasma processing apparatus.Wherein, Kelvin effect according to radio-frequency (RF) energy, radio-frequency (RF) energy also can plasma processing apparatus Electric Field Distribution formed below again, therefore the electrology characteristic of these wire electric wires can be affected, such as produce not should faradic current etc., therefore have impact on the normal operation of specific components, thus bringing extreme influence finally to the processing procedure of substrate.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma processing apparatus and radio-frequency shielding fence thereof.
First aspect present invention provides a kind of radio-frequency shielding fence for plasma processing apparatus, wherein, described plasma processing apparatus includes the base station of a placement substrate, and described radio-frequency shielding fence is arranged at below described base station, it is characterized in that, described radio-frequency shielding fence includes:
The inner shell of tubbiness and shell, described inner shell is positioned among shell；
At least one barricade, it is arranged among described inner shell, and in order to isolate the some wires being contained in described inner shell, wherein, described inner shell is that conductive material is made, and radio frequency power source energy is connected to described plasma processing apparatus by described inner shell.
Further, described wire includes temperature pilot or DC source wire.
Further, described temperature pilot is connected to the heater in described base station, in order to control the temperature of described heater.
Further, described temperature pilot is connected to the DC electrode in the electrostatic chuck in described base station, in order to provide DC source energy so that the substrate being positioned on described base station is produced electrostatic attraction to DC electrode.
Further, the material of described inner shell is copper.
Further, the material of described shell is aluminum.
Further, described shell is connected to the ground end or zero potential end.
Further, described radio-frequency shielding fence is connected with the base station of chamber by three connectors.
Further, described inner shell and shell are cylindrical shape or the square tube shapes of hollow.
Further, the span of the distance of described inner shell and shell is 10mm～20mm.
Second aspect present invention provides a kind of plasma processing apparatus, and wherein, described plasma processing apparatus includes the radio-frequency shielding fence that first aspect present invention provides.
The present invention is it can be avoided that the mutual crosstalk of the assembly such as temperature pilot and DC source wire in radio-frequency shielding fence.
Accompanying drawing explanation
Fig. 1 is the structural representation of the radio-frequency shielding fence for plasma processing apparatus of a specific embodiment according to the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is illustrated.
Fig. 1 is the structural representation of the radio-frequency shielding fence for plasma processing apparatus of a specific embodiment according to the present invention.
As it is shown in figure 1, first the 26S Proteasome Structure and Function of plasma process chamber 100 is described.Plasma process chamber 100 has a process chambers, and process chambers is cylindricality substantially, and process chambers sidewall perpendicular, has upper electrode arranged in parallel and bottom electrode in process chambers.Generally, the region between upper electrode and bottom electrode is processing region P, this region P by formation high-frequency energy to light and to maintain plasma.Place substrate W, this substrate W to be processed above electrostatic chuck in base station 102 treat the semiconductor chip to etch or to process or treat to be processed into the glass plate of flat faced display.Wherein, described electrostatic chuck is used for clamping substrate W.Reacting gas is input in process chambers from gas source, one or more radio-frequency power supplies can be applied individually on the bottom electrode or are applied to respectively on upper electrode and bottom electrode simultaneously, in order to radio-frequency power is transported on bottom electrode or on upper electrode and bottom electrode, thus producing big electric field inside process chambers.Most of electric field lines are comprised in the processing region P between electrode and bottom electrode, and the electronics being present on a small quantity within process chambers is accelerated by this electric field, so as to the gas molecule collision of the reacting gas with input.These collisions cause the ionizing of reacting gas and exciting of plasma, thus producing plasma in process chambers.The neutral gas molecule of reacting gas loses electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, and the neutral substance in processed substrate is combined, and excites substrate to process, i.e. etching, deposit etc..Be provided with exhaust gas region in certain suitable position of plasma process chamber 100, exhaust gas region is connected with external exhaust apparatus (such as vacuum pump pump), in order to extract used reacting gas and bi-product gas out chamber in processing procedure.Wherein, plasma confinement ring is used for plasma confinement in processing region P.
Wherein, as it is shown in figure 1, described radio-frequency shielding fence 200 is arranged at below described base station 102.Specifically, described radio-frequency shielding fence 200 includes inner shell 202 and the shell 204 of tubbiness, and described inner shell 202 is positioned among shell 204, and is not in contact with between the two.Described radio-frequency shielding fence 200 also includes at least one barricade 212, and it is arranged among described inner shell 202, and inner shell 202 is divided into the space of at least two independence, and described barricade 212 can isolate the some wires being contained in described inner shell 202.Wherein, described inner shell 202 is that conductive material is made, and radio frequency power source energy is connected to described plasma processing apparatus 100 by described inner shell 202.
Alternatively, in the present embodiment, described wire includes temperature pilot 208 or DC source wire 210.As it is shown in figure 1, temperature pilot 208 and DC source wire 210 lay respectively at two independent spaces that described barricade 212 is kept apart.Owing to barricade 212 has the effect of electric isolution, it has separated temperature pilot 208 and DC source wire 210, and therefore both will not influence each other.Even if DC source wire 210 creates faradic current, temperature pilot 208 is without being subject to any interference, say, that temperature pilot 208 and DC source wire 210 will not crosstalks mutually.
Further, described temperature pilot 208 is connected to the heater in described base station 102, in order to control the temperature of described heater.
Further, described temperature pilot 208 is connected to the DC electrode in the electrostatic chuck in described base station 102, in order to provide DC source energy so that the substrate being positioned on described base station 102 is produced electrostatic attraction to DC electrode.
Further, the material of described inner shell is copper.
Further, the material of described shell is aluminum.
Further, described shell is connected to the ground end or zero potential end.
Further, described radio-frequency shielding fence 200 is connected with the base station 102 of chamber by three connectors 206.
Typically, described inner shell 202 and shell 204 are cylindrical shape or the square tube shapes of hollow.
Further, the span of the distance of described inner shell 202 and shell 204 is 10mm～20mm.
Second aspect present invention additionally provides a kind of plasma processing apparatus 100, and wherein, described plasma processing apparatus 100 includes previously described radio-frequency shielding fence 200.
Although present disclosure has been made to be discussed in detail already by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read foregoing, multiple amendment and replacement for the present invention all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1., for a radio-frequency shielding fence for plasma processing apparatus, wherein, described plasma processing apparatus includes the base station of a placement substrate, and described radio-frequency shielding fence is arranged at below described base station, it is characterised in that described radio-frequency shielding fence includes:
The inner shell of tubbiness and shell, described inner shell is positioned among shell；
At least one barricade, it is arranged among described inner shell, in order to isolate the some wires being contained in described inner shell, described wire includes temperature pilot, wherein, described inner shell is that conductive material is made, and radio frequency power source energy is connected to described plasma processing apparatus by described inner shell.
2. radio-frequency shielding fence according to claim 1, it is characterised in that described wire includes DC source wire.
3. radio-frequency shielding fence according to claim 1, it is characterised in that described temperature pilot is connected to the heater in described base station, in order to control the temperature of described heater.
4. radio-frequency shielding fence according to claim 2, it is characterized in that, described DC source wire is connected to the DC electrode in the electrostatic chuck in described base station, in order to provide DC source energy so that the substrate being positioned on described base station is produced electrostatic attraction to DC electrode.
5. radio-frequency shielding fence according to claim 1, it is characterised in that the material of described inner shell is copper.
6. radio-frequency shielding fence according to claim 1, it is characterised in that the material of described shell is aluminum.
7. radio-frequency shielding fence according to claim 1, it is characterised in that described shell is connected to the ground end or zero potential end.
8. radio-frequency shielding fence according to claim 1, it is characterised in that described radio-frequency shielding fence is connected with the base station of chamber by three connectors.
9. radio-frequency shielding fence according to claim 1, it is characterised in that described inner shell and shell are cylindrical shape or the square tube shapes of hollow.
10. radio-frequency shielding fence according to claim 1, it is characterised in that the span of the distance of described inner shell and shell is 10mm～20mm.
11. a plasma processing apparatus, it is characterised in that described plasma processing apparatus includes the radio-frequency shielding fence described in any one of claim 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310183046.7A CN104167343B (en) | 2013-05-17 | 2013-05-17 | Plasma processing apparatus and radio-frequency shielding fence thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310183046.7A CN104167343B (en) | 2013-05-17 | 2013-05-17 | Plasma processing apparatus and radio-frequency shielding fence thereof |
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| CN104167343A CN104167343A (en) | 2014-11-26 |
| CN104167343B true CN104167343B (en) | 2016-07-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107093545B (en) | 2017-06-19 | 2019-05-31 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN109831882A (en) * | 2019-02-28 | 2019-05-31 | 佛山星乔电子科技有限公司 | A kind of transparent LCD display module and its control method applied to large glass wall |
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| US6110287A (en) * | 1993-03-31 | 2000-08-29 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| CN1849033A (en) * | 2005-12-09 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Signal transmitting device for electrostatic cartridge |
| CN201869431U (en) * | 2010-11-26 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma processor |
| CN102487572A (en) * | 2010-12-02 | 2012-06-06 | 理想能源设备有限公司 | Plasma processing device |
| CN202796848U (en) * | 2012-09-13 | 2013-03-13 | 中微半导体设备(上海)有限公司 | Power supply circuit for heater |
| CN103014660A (en) * | 2012-12-14 | 2013-04-03 | 广东志成冠军集团有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating device and connecting device of radio-frequency power supply and vacuum chamber thereof |
| CN202873172U (en) * | 2012-11-08 | 2013-04-10 | 中微半导体设备(上海)有限公司 | Plasma reactor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3902125B2 (en) * | 2002-12-03 | 2007-04-04 | 東京エレクトロン株式会社 | Temperature measuring method and plasma processing apparatus |
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2013
- 2013-05-17 CN CN201310183046.7A patent/CN104167343B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110287A (en) * | 1993-03-31 | 2000-08-29 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US6020570A (en) * | 1997-02-03 | 2000-02-01 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
| CN1849033A (en) * | 2005-12-09 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Signal transmitting device for electrostatic cartridge |
| CN201869431U (en) * | 2010-11-26 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma processor |
| CN102487572A (en) * | 2010-12-02 | 2012-06-06 | 理想能源设备有限公司 | Plasma processing device |
| CN202796848U (en) * | 2012-09-13 | 2013-03-13 | 中微半导体设备(上海)有限公司 | Power supply circuit for heater |
| CN202873172U (en) * | 2012-11-08 | 2013-04-10 | 中微半导体设备(上海)有限公司 | Plasma reactor |
| CN103014660A (en) * | 2012-12-14 | 2013-04-03 | 广东志成冠军集团有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating device and connecting device of radio-frequency power supply and vacuum chamber thereof |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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