CN104950585B - A kind of immersion liquid limiting mechanism - Google Patents
A kind of immersion liquid limiting mechanism Download PDFInfo
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- CN104950585B CN104950585B CN201410114022.0A CN201410114022A CN104950585B CN 104950585 B CN104950585 B CN 104950585B CN 201410114022 A CN201410114022 A CN 201410114022A CN 104950585 B CN104950585 B CN 104950585B
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Abstract
The present invention relates to a kind of immersion liquid limiting mechanism, including first level liquid feeding channel, first level liquid outlet channel, vertical liquid feeding channel, gas-liquid recovery approach and air supply channel, first level liquid feeding channel and first level liquid outlet channel are oppositely arranged, vertical liquid feeding channel, the outlet of gas-liquid recovery approach and air supply channel is arranged in order in the bottom of immersion liquid limiting mechanism from inside to outside, first level liquid feeding channel, vertical liquid feeding channel is respectively connecting to liquid supply equipment, first level liquid outlet channel and gas-liquid recovery approach are respectively connecting to gas-liquid reclaimer, air supply channel is connected to air feed equipment, also include the second horizontal liquid feeding channel being connected with liquid supply equipment and the second horizontal liquid outlet channel being connected with gas-liquid reclaimer.The present invention enters row constraint to its positions and dimensions by setting up the second horizontal liquid feeding channel and the second horizontal liquid outlet channel, improves the flow velocity and uniformity of main flow, and reduces the pressure oscillation of exposure field, prevents influence of the pressure oscillation to immersion liquid depth of focus and alignment.
Description
Technical field
The present invention relates to immersed photoetching machine field, more particularly to a kind of immersion liquid limiting mechanism.
Background technology
The operation principle of immersed photoetching machine is the last a piece of optical frames by the projection objective in dry lithography system
Immersion liquid of the refractive index more than 1 is filled in space between piece and silicon chip, the optical waveguide index in this sheaf space is improved, originally by sky
The light of gas total reflection limitation can be incided in liquid, reached increasing depth of focus, put forward high-resolution purpose, so as to obtain more refinement
Small lines.
The structure of immersed photoetching machine as shown in figure 1, in the apparatus, illuminator 2, projection objective 4 and silicon wafer stage 8 according to
It is secondary to be fixed on main frame 1, a silicon chip 7 for scribbling light sensitive photoresist is placed with silicon wafer stage 8.The immersed photoetching machine structure,
By immersion liquid 5（Such as water）It is filled in the gap between projection objective 4 and silicon chip 7.During work, silicon wafer stage 8 drives silicon chip 7 to make at a high speed
Scanning, stepwise operation, immersion liquid limiting mechanism（Submergence head）6 according to the motion state of silicon wafer stage 8, in the visual field of projection objective 4
Scope a, there is provided apparatus soaking liquid flow field for stabilization, while ensureing the sealing in flow field and the external world, it is ensured that liquid is not leaked.On mask 3
The figure of integrated circuit is transferred to and scribbles photosensitive light by way of illuminator 2, projection objective 4 and immersion liquid 5 are with Imagewise exposure
On the silicon chip 7 of photoresist, so as to complete exposure.
The appearance profile shape of existing immersion liquid limiting mechanism differs, but in-profile is the taper matched with projection objective 4
Structure, as shown in Fig. 2 the immersion liquid 5 of liquid supply equipment supply is flowed into flow field by immersion liquid feed path 61, fills projection objective 4
And the gap between silicon chip 7, immersion liquid is flowed out by immersion liquid flow pass 62 and gas-liquid recovery approach 63, by gas-liquid reclaimer
Reclaim.Therefore, apparatus soaking liquid flow field is formd in the gap between projection objective 4 and silicon chip 7, it is desirable to the immersion liquid 5 in apparatus soaking liquid flow field
In constant flow state, without backflow, and the composition of immersion liquid, pressure field, velocity field, temperature field transient state and stable state change are less than one
Determine scope.
Incorporated by reference to Fig. 3, the apparatus soaking liquid flow field is maintained by what immersion liquid limiting mechanism 6 was controlled, described immersion liquid
Flow field includes main flow 52 and edge flow field 53, exposure area 54 being included in the main flow 52, main in exposure area 54
By the way of level injection and level are reclaimed, the metastable Flow Field Distribution of flow velocity, the dirt of the main flow that upgrades in time 52 are obtained
Dye；Using vertical supplement reservoir channel 65 and gas-liquid recovery approach 63 in edge flow field 53；Simultaneously because limiting machine in immersion liquid
There is the gap of certain altitude between the lower surface of structure 6 and the upper surface of silicon chip 7, to prevent the immersion liquid 5 from this in apparatus soaking liquid flow field
Earial drainage in gap, is additionally provided with air supply channel 64, forms the air column towards the surface of silicon chip 7, and the immersion liquid 5 to edge flow field 53 is outside
Boundary diffusion has certain inhibition, and gas or gas liquid mixture are expected that by the pump drainage of gas-liquid recovery approach 63 and go out, so that
Gas is formed pressure increases the gas " curtain " that region forms the earial drainage of immersion liquid 5 in stop flow field, realizes that flow field seals.
Additionally, the outside air being in contact with free surface 51（Work stage gas bath）, cleanliness factor is generally ISO3 or ISO2
More than, relative air humidity is less than 65%, and the particle of more than 100nm is less than 1000 every cubic metre in air, and dust in air is micro-
The pollutant concentrations such as grain, carbide, silicon-containing material are higher, and the particulate and metal ion that lithographic equipment contains；If these
Pollution is entered in flow field by free surface 51, immersion liquid 5 and immersion liquid limiting mechanism 6, it will produce a series of adverse effects, such as
There may be the caused exposure defect such as particle, bubble, camera lens lower surface is polluted（lens cloudy）Deng.
The defect of immersed photoetching machine mainly has air blister defect, residual drop defect and grain defect.To reduce and controlling
These pollution defects are made, is currently the preceding working procedure by exposing, degassing process device and use are passed through to immersion liquid ultra-pure water
Edge exposure device matches somebody with somebody resultant pressure and flow adjusting parameter, carries out sealing control air blister defect and residual drop defect；Using low
Outgassing material, surface polishing, coating material and accurate filter device control particle contamination, are reduced under desired value.So
And for particle contamination, currently still problems faced is：Because the immersion liquid limiting mechanism 6 for using maintains the flow field of immersion liquid 5, in it
Portion's pipeline material and unavoidable introducing particle in ultra-pure water directly contact and the exposure process of silicon chip 7, so as to cause particle
It is exposed the defect of printing.
The content of the invention
The present invention provides a kind of immersion liquid limiting mechanism, to solve above-mentioned technical problem.
In order to solve the above technical problems, the present invention provides a kind of immersion liquid limiting mechanism, by immersion liquid be limited in projection objective and
Between silicon chip, including first level liquid feeding channel, first level liquid outlet channel, vertical liquid feeding channel, gas-liquid recovery approach and
Air supply channel, the first level liquid feeding channel and first level liquid outlet channel are oppositely arranged, the vertical liquid feeding channel, gas-liquid
The outlet of recovery approach and air supply channel is arranged in order in the bottom of immersion liquid limiting mechanism, the first level feed flow from inside to outside
Passage, vertical liquid feeding channel are respectively connecting to liquid supply equipment, and the first level liquid outlet channel and gas-liquid recovery approach connect respectively
Gas-liquid reclaimer is connected to, the air supply channel is connected to air feed equipment, and also the second level including being connected with liquid supply equipment is supplied
Liquid passage and the second horizontal liquid outlet channel being connected with gas-liquid reclaimer.
It is preferred that the horizontal arc of the second horizontal liquid feeding channel and the second horizontal liquid outlet channel is equal, and relative to
The distribution substantially symmetrical about its central axis of the projection objective.
It is preferred that the second horizontal liquid feeding channel is more than the second horizontal liquid outlet channel and silicon with the distance of silicon chip upper surface
The distance of piece upper surface, the second horizontal liquid outlet channel is more than projection objective lower surface and silicon chip upper table with the distance of silicon chip upper surface
The distance in face.
It is preferred that vertical width of the vertical width of the second horizontal liquid feeding channel less than the described second horizontal liquid outlet channel
Degree.
It is preferred that the distance between the projection objective lower surface and silicon chip upper surface are 0.1~0.2mm.
It is preferred that rectangular cross-section or the arc loudspeaker of the second horizontal liquid feeding channel and the second horizontal liquid outlet channel
Shape.
It is preferred that the height of the immersion liquid limiting mechanism is 9~10mm；The second horizontal liquid feeding channel and silicon chip upper table
The distance in face is 3.1~6.5mm；The second horizontal liquid outlet channel is 3.1~5mm with the distance of silicon chip upper surface.
It is preferred that the second horizontal liquid feeding channel is 6.0mm with the distance of silicon chip upper surface；Second level goes out liquid
Passage is 4.5mm with the distance of silicon chip upper surface.
It is preferred that the horizontal arc of the second horizontal liquid feeding channel and the second horizontal liquid outlet channel is 70 °~120 °.
It is preferred that the horizontal arc of the second horizontal liquid feeding channel and the second horizontal liquid outlet channel is 90 °
It is preferred that the vertical width of the second horizontal liquid feeding channel is 1.5~2.0mm, second level goes out liquid and leads to
The vertical width in road is 2.0~2.5mm.
It is preferred that the vertical width of the second horizontal liquid feeding channel be 1.5mm, the second horizontal liquid outlet channel hang down
Straight width is 2.0mm.
It is preferred that the second horizontal liquid feeding channel is connected to independent positive pressure source, the second horizontal liquid outlet channel connects
It is connected to independent negative pressure source.
It is preferred that the outlet of the vertical liquid feeding channel can be elongated slit, or uniform circle or
Square aperture.The width of the slit is between 0.1~0.2mm.
It is preferred that the outlet of the gas-liquid recovery approach can be elongated slit, or uniform circle or
Square aperture.The width of the slit is between 0.4~0.6mm.
It is preferred that the air supply channel structure is elongated slit or uniform circular or square aperture.It is described narrow
The width of seam is between 0.1~0.2mm.
Compared with prior art, the immersion liquid limiting mechanism that the present invention is provided, increases by the in existing immersion liquid limiting mechanism
The level of two horizontal liquid feeding channels and the second horizontal liquid outlet channel, the second horizontal liquid feeding channel and the second horizontal liquid outlet channel
Radian is equal, and relative to the distribution substantially symmetrical about its central axis of the projection objective；The second horizontal liquid feeding channel and silicon chip upper table
The distance in face is more than the distance of the second horizontal liquid outlet channel and silicon chip upper surface, the second horizontal liquid outlet channel and silicon chip upper surface
Distance is more than projection objective lower surface and the distance of silicon chip upper surface；The vertical width of the second horizontal liquid feeding channel is less than institute
State the vertical width of the second horizontal liquid outlet channel.The present invention goes out liquid and leads to by setting up the second horizontal liquid feeding channel and the second level
Road, and its positions and dimensions are entered with row constraint, improve the flow velocity and uniformity of main flow, and reduce the pressure oscillation of exposure field,
Prevent influence of the pressure oscillation to immersion liquid depth of focus and alignment.
Brief description of the drawings
Fig. 1 is the structural representation of immersed photoetching machine in the prior art；
Fig. 2 is the structural representation of immersion liquid limiting mechanism of the prior art；
Fig. 3 is the schematic bottom view of immersion liquid limiting mechanism of the prior art；
Fig. 4 is the relation schematic diagram of particulate sinking speed and diameter of particle in flow field；
Fig. 5 is the particulate track for calculating；
Fig. 6 is the structural representation of immersion liquid limiting mechanism in the embodiment of the invention；
Fig. 7 is that the second horizontal liquid feeding channel and the second level go out in immersion liquid limiting mechanism in the embodiment of the invention
Position relationship schematic diagram between liquid passage and projection objective and silicon chip；
Fig. 8 a and 8b are respectively the emulation of the apparatus soaking liquid flow field of immersion liquid limiting mechanism formation in the embodiment of the invention
Image；
Fig. 9 a and 9b are respectively the second horizontal immersion liquid passage and the second level in the embodiment of the invention and go out liquid and lead to
The top view in road；
Figure 10 a and 10b are respectively the immersion liquid stream under two kinds of value situations of h1 and h2 in the embodiment of the invention
The emulating image of field；
Figure 11 a and 11b are respectively device under A groups data cases of the present invention（e）And device（f）Horizontal middle section speed point
Cloth cloud atlas；
Figure 12 a and 12b are respectively device under A groups data cases of the present invention（e）And device（f）Horizontal middle section pressure point
Cloth cloud atlas；
Figure 13 is device under A groups data cases of the present invention（e）Vertical middle section pressure distribution cloud atlas；
Figure 14 a and 14b are respectively device under B groups data cases of the present invention（e）And device（g）Horizontal middle section speed point
Cloth cloud atlas；
Figure 15 a and 15b are respectively device under B groups data cases of the present invention（e）And device（g）Horizontal middle section pressure point
Cloth cloud atlas；
Figure 16 a and 16b are respectively device under B groups data cases of the present invention（e）And device（g）Vertical middle section pressure
Cloud charts；
Figure 17 a and 17b are respectively device under C groups data cases of the present invention（e）And device（h）Horizontal middle section flow velocity
Cloud charts.
In Fig. 1~3：1- main frames, 2- illuminators, 3- masks, 4- projection objectives, 5- immersion liquid, 51- free surfaces,
52- main flows field, 53- edges flow field, 54- exposure areas, 6- immersion liquid limiting mechanism, 61- immersion liquid feed path, 62- immersion liquid outflow
Passage, 63- gas-liquids recovery approach, 64- air supply channels, 65- vertically supplement reservoir channel, 7- silicon chips, 8- silicon wafer stages；
In Fig. 6~9b：100- projection objectives, 200- silicon chips, 300- immersion liquid, 310- main flows field, 320- edges flow field, 400-
Immersion liquid limiting mechanism, 410- first levels feed path, 420- first levels liquid outlet channel, the vertical liquid feeding channels of 430-, 440-
Gas-liquid recovery approach, 450- air supply channels, the horizontal liquid feeding channels of 460- second, the horizontal liquid outlet channels of 470- second；
430 '-First Line, 440 '-the second lines, 450 '-the three lines.
Specific embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.It should be noted that, accompanying drawing of the present invention is in the form of simplification and using non-essence
Accurate ratio, is only used to conveniently, lucidly aid in illustrating the purpose of the embodiment of the present invention.
The renewal rate and the stability and uniformity in flow field in the main acceptor flow field of defect that printing is exposed due to particle
Influence, particle in fluid would generally be subject to gravity, buoyancy, drag force, pressure and gradient force, virtual mass power, Basset power,
Magnus power, Saffman power, thermophoretic forces etc. are acted on.As shown in figure 4, in 20 DEG C of normal temperature particulate sinking speed vsWith particulate grain
Footpath dp（If being represented with micron）Relational expression be：
When apparatus soaking liquid flow field has flowing velocity, its particulate sinking speed is as follows with the relation of flow velocity：A diameter of dp, density be
ρpSingle spherical particulate, density be ρaFluid driven under move, if particulate follows fluid to move together completely, particulate
Suffered power should be equal to the power suffered by fluid when particulate does not exist and fluid occupies space where particulate, i.e.,
In formula：uaThe flow velocity of fluid when the space where particulate is filled with immersion liquid；T is the time.
In fact, particulate not fully follows fluid to move together, the power suffered by particulate should subtract particulate from above-mentioned power
Relative to the part power F of fluid motionr.So, the equation of motion of particulate should be
U in formulapIt is the speed of particle movement, FrEquivalent to particulate in static viscous fluid with up-uaIt is suffered during motion
Resistance.Following formula is obtained after equation solution：
In formula
ω is turbulence pulsation frequency, if in space as toilet, ω only has within the order of magnitude of kilohertz, for dp
=1 μm, particulate follows the speed of fluid motion（Follow speed）With fluid velocity difference not more than 0.001.
As Fig. 5 represents the particulate track for calculating, calculated since particle speed is identical with fluid velocity, calculated to control
Untill coordinate of the position top equivalent to its diameter range -0.05.The particle diameter of particulate used（Diameter）It is 0.621 μm and 1.004 μ
Two kinds of m, as can be seen from Fig. 5, △ Mx and △ My are the coordinates that particulate deviates fluid flow line in X, Y-direction, and the size of the coordinate is then
It is shown in table 1, it can be seen in table 1 that for the particulate that particle diameter is 1.004 μm, when rate of flow of fluid u is than 0.3m/s more hours, its
The relative quantity of path deviation streamline displacement is also unlikely more than 0.001.Therefore the analysis result thinks, near controlling position
Particle movement track is substantially similar to streamline.
Table 1
As can be seen from the above data, even ifBecause flow field velocity is transported compared with particulate sedimentation, diffusion and inertia
Dynamic speed is much bigger, therefore the speed that follows of particulate is still to determine the principal element how particulate is distributed, only for stream
Body has a delayed time, but this does not influence on the problem studied, and only tests the speed such problem just in Study of Laser
Consider the problem of lag time.
To sum up obtain：When the main flow field velocity of immersion liquid is not zero, the speed of particulate sedimentation, diffusion and inertia motion can be neglected
Omit, therefore the speed that follows of particulate is still the principal element how decision particulate is distributed, particulate sinking speed and apparatus soaking liquid flow field
Flow velocity it is about consistent, when main flow field velocity is zero, particulate sedimentation, diffusion and the speed of inertia motion cannot be ignored, and flow
Speed be zero region be easily caused in immersion liquid particle deposition, when under the motion operating mode of silicon chip, the particle of deposition is easily by band
To effective exposure field, grain defect is printed as.Therefore need to avoid the region and flow back that apparatus soaking liquid flow field is zero as far as possible
Phenomenon occurs.
Flow velocity has an effect on the distribution of exposure thermal power in addition to the pollution that influence particle deposition causes, in immersion liquid limitation
Under conditions of the structure of mechanism is certain, the gateway temperature difference is consistent, and immersion liquid flow qv has following relation with exposure thermal power Q：
AndTherefore have：Wherein ρ, cp、ΔT、A、The respectively density of immersion liquid, specific heat
Appearance, the temperature difference, apparatus soaking liquid flow field area and mean flow rate.Illustrate in the case where the temperature difference is constant, apparatus soaking liquid flow field mean flow rate v gets over
Greatly, the heat that this can take away is more.It is divided into the flow of main flow and the flow in edge flow field because of the flow of immersion liquid limiting mechanism,
The flow of main flow is mainly used for updating flow velocity and balance exposes heat energy, and the flow in edge flow field is mainly used for sealing leaching
Liquid, prevents immersion liquid from revealing and influenceing exposure quality, therefore main flow and edge flow field contact with each other and interference-free, are
Such function is realized, expects that the fluctuation in main flow and edge flow field is all as far as possible small, prevent from interfering, it is therefore desirable to immersion liquid
Flow velocity try one's best and be uniformly distributed.
Different fluid injection patterns in immersion liquid limiting mechanism, it is possible to achieve the uniform and stable flowing of immersion liquid and constantly more
Newly.The speed distribution regularities of the main flow in immersion liquid follow clearance flow rule between flat board, also comply with N-S equations, and its principle is as follows：
The size of flow velocity is mainly influenceed by mass force, pressure, viscous force.Because the height in flat board gap is far smaller than
Length, thus mass force can be ignored（That is gravity）Effect.
When being carved at the beginning of the period of motion of silicon chip, when in silicon chip stabilization time, apparatus soaking liquid flow field only has inlet flow rate
In the case of, inlet flow rate is distributed similar to parabolic, and the up-and-down boundary of apparatus soaking liquid flow field meets wall non-slip condition, so
Apparatus soaking liquid flow field flow velocity in the middle of section is maximum, and the flow velocity near wall is less and less, and wall border flow velocity is zero；When silicon chip is carried out
When stepping and scanning motion, due to the viscous effect of fluid, flow field lower boundary is started to be moved with silicon chip by shearing force, for
The instantaneity of stability and the silicon chip action of feed flow pressure difference, it is assumed that immersion liquid is flowed and drawn by pressure difference stream and the silicon chip motion of liquid supply equipment
The transient state shear flow coupled in common for rising is formed.
Present disclosure is obtained by above-mentioned analysis.
Fig. 6 to Fig. 7 is refer to, immersion liquid 300 is limited in projection objective 100 by the immersion liquid limiting mechanism 400 that the present invention is provided
And silicon chip 200 between, including first level liquid feeding channel 410, first level liquid outlet channel 420, vertical liquid feeding channel 430, gas
Liquid recovery approach 440 and air supply channel 450, the first level liquid feeding channel 410 and first level liquid outlet channel 420 are relative
Set, the outlet of the vertical liquid feeding channel 430, gas-liquid recovery approach 440 and air supply channel 450 be arranged in order from inside to outside in
The bottom of immersion liquid limiting mechanism 400, the first level liquid feeding channel 410, vertical liquid feeding channel 430 are respectively connecting to feed flow and set
Standby, the first level liquid outlet channel 420 and gas-liquid recovery approach 440 are respectively connecting to gas-liquid reclaimer, and the supply leads to
Road 450 is connected to air feed equipment, also the horizontal liquid feeding channel 460 of second including being connected with liquid supply equipment and with gas-liquid reclaimer
Second horizontal liquid outlet channel 470 of connection, the level of the horizontal liquid outlet channel 470 of the second horizontal liquid feeding channel 460 and second
Radian is equal, and relative to the distribution substantially symmetrical about its central axis of the projection objective 100；The second horizontal liquid feeding channel 460 and silicon
The distance of the upper surface of piece 200 goes out liquid and leads to more than the second horizontal liquid outlet channel 470 and the distance of the upper surface of silicon chip 200, the second level
Road 470 is more than the distance of the lower surface of projection objective 100 and the upper surface of silicon chip 200 with the distance of the upper surface of silicon chip 200；Described second
Vertical width of the vertical width of horizontal liquid feeding channel 460 less than the described second horizontal liquid outlet channel 470.The present invention is by setting up
Second horizontal liquid feeding channel 460 and the second horizontal liquid outlet channel 470, by the second horizontal liquid feeding channel 460 and the second level
The horizontal arc and vertical width of liquid outlet channel 470 are defined to improve on the lower surface of projection objective 100 and silicon chip 200
The flow velocity and its uniformity of the main flow 310 between surface；By limiting the second horizontal liquid feeding channel 460 and the upper table of silicon chip 200
The distance in face and the distance of the second horizontal liquid outlet channel 470 and the upper surface of silicon chip 200, so that immersion liquid 300 can fill up projection thing
The lower surface of mirror 100 reduces the pressure oscillation of exposure field to the gap between the upper surface of silicon chip 200, prevents pressure oscillation to leaching
The influence of liquid depth of focus and alignment.And it is possible to the appearance and size of projection objective 100 is ensured immersion liquid as the foundation of design
300 fill up the lower surface of projection objective 100 to the gap of the upper surface of silicon chip 200.
Specifically, the edge flow field 320 that immersion liquid limiting mechanism 400 of the invention is formed can be circular seal edge, such as
Square rim sealing flow field shown in Fig. 8 a, or shown in Fig. 8 b, i.e., be 45 ° of square with the angle of X, Y-axis,
It is of course also possible to be the arbitrary graphic on horizontal plane, it is not construed as limiting in the present invention.
Please continue to refer to Fig. 7, and Fig. 8 a and 8b are combined, the vertical liquid feeding channel 430 is under immersion liquid limiting mechanism 400
Surface radially inner side forms " First Line " 430 ', and the opening of the vertical liquid feeding channel 430 can be elongated slit, it is also possible to
It is, along the uniform circular or square aperture of " First Line " 430 ', to expect the width of slit between 0.1~0.2mm, this reality
Apply the slit that 0.2mm is taken in example；Gas-liquid recovery approach 440 forms " the second line " 440 ' in the lower surface of immersion liquid limiting mechanism 400,
Its opening can be elongated slit, or the uniform circular or square aperture of edge " the second line " 440 ', expect narrow
The width of seam takes the slit of 0.5mm between 0.4~0.6mm, in the present embodiment, and the gas-liquid recovery approach 440 should be connected to
Independent negative pressure source, to produce desired pump drainage negative pressure；Air supply channel 450 forms " the in the lower surface of immersion liquid limiting mechanism 400
Three lines " 450 ', its structure is elongated slit, or edge " the 3rd line " 450 ' uniform circular or square aperture,
Expect that the width range of slit, for 0.1mm~2mm, takes the slit of 0.2mm in the present embodiment, the air supply channel 450 should be connected
To independent positive pressure source, to produce desired supply gas pressure.
It is preferred that asking emphasis to refer to Fig. 9 a and 9b, the horizontal liquid outlet channel of the second horizontal liquid feeding channel 460 and second
470 rectangular cross-section or arc are horn-like, specifically, the arc it is horn-like for a kind of similar to trapezoidal shape, its bag
Include the length of the upper bottom edge and bottom being parallel to each other, the upper bottom edge and bottom, the two ends difference of the upper bottom edge
It is corresponding with the two ends of bottom to be connected, and line is arc outwardly.The the second horizontal feed flow selected in the present embodiment leads to
The rectangular cross-section of the horizontal liquid outlet channel 470 of road 460 and second.
It is preferred that asking emphasis to refer to Fig. 7, the height of the immersion liquid limiting mechanism 400 is 9~10mm, the projection objective
The distance between 100 lower surfaces and the upper surface of silicon chip 200 h are 0.1~0.2mm, are 0.2mm in the present embodiment；Second water
Flat liquid feeding channel 460 is 3.1~6.5mm apart from h1 with the upper surface of silicon chip 200；The second horizontal liquid outlet channel 470 and silicon
The upper surface of piece 200 is 3.1~5mm apart from h2, certainly, still to meet the relation of h1 ＞ h2 ＞ h.Specifically, in order to prevent
The upper surface of immersion liquid limiting mechanism 400 produces immersion liquid 300 to reveal, and expects total heights of the h1 less than immersion liquid limiting structure 400, best
It is less than 8mm.In order to ensure that the lower surface of projection objective 100 to the gap between the upper surface of silicon chip 200 is filled up in immersion liquid 300, and
The pressure oscillation of exposure field is as far as possible small to prevent influence of the pressure oscillation to immersion liquid depth of focus and alignment, it is therefore desirable for h2>h.
It is preferred that please continue to refer to Fig. 9 b, the horizontal arc of the second horizontal liquid feeding channel 460 is B1, the second level
The horizontal arc of liquid outlet channel 470 is B2, and the B1 and B2 is the boundary dimensions of the inner surface of immersion liquid limiting mechanism 400.For
Improve the flow velocity of immersion liquid 300 and be uniformly distributed it, expect that the horizontal level of liquid feeding channel 460 and second of B1=B2, i.e., second goes out
The horizontal arc of liquid passage 470 is equal, and the distribution substantially symmetrical about its central axis of projection objective 100 relatively；In order to ensure the stabilization of immersion liquid 300
Flowing, expect for B1 and the second horizontal liquid feeding channel 460 have following relation to limit with the upper surface of silicon chip 200 apart from h1：
180°×(2R0-2×h1)÷π÷(h1+R0) 180 ° × (π × R of ＜ B1 ＜0-2×h1)÷π÷(h1+R0),
Wherein R0It is the radius size of the lower surface of projection objective 100, is confinement dimension, is 27.5mm in the present embodiment, by R0
=27.5mm, h1=3.1~6.5mm, bring into above formula, and it is 70 °~120 ° to obtain the span of B1 and B2, i.e. the second level is supplied
The horizontal arc of the horizontal liquid outlet channel 470 of liquid passage 460 and second is 70 °~120 °.Apparatus of the present invention take respectively 60 ° and
90 ° of comparative analyses, concrete analysis see below A group data.
Please emphasis refer to Figure 10 a and 10b, according to the relation of the flow of immersion liquid 300 and flow velocity, the second horizontal liquid feeding channel 460
Independent positive pressure source should be connected to, to provide desired feed flow flow, it is preferred that the second horizontal liquid feeding channel 460 is vertical
Straight width is 1.5~2.0mm, and the vertical width of the second horizontal liquid outlet channel 470 is 2.0~2.5mm；According further to immersion liquid
The relation of 300 inlet-outlet flow balances, the second horizontal liquid outlet channel 470 should be connected to independent negative pressure source, with produce it is desired go out
Mouth pressure, it is preferred that the vertical width of the second horizontal liquid outlet channel 470 is 2.0~2.5mm.In order to reduce exposure as far as possible
The pressure oscillation in region, expects D1<D2, concrete analysis see below C group data.
Please emphasis refer to Fig. 7, the second horizontal liquid feeding channel 460 and the upper surface of silicon chip 200 apart from h1 be 3.1~
6.5mm, takes 1.0mm and 4.5mm comparative analyses respectively in the present embodiment；On the second horizontal liquid outlet channel 470 and silicon chip 200
Surface is 3.1~5mm apart from h2, takes 1.0mm and 4.5mm comparative analyses in the present embodiment respectively, and concrete analysis see below B
Group data.
What the present invention was studied is the flow velocity update status in 310 regions of main flow, therefore has made letter for edge flow field 320
Change, expecting the flow velocity in edge flow field 320 does not influence the velocity flow profile of main flow 310, therefore is provided with the edge flow field 320 of table 2
Boundary condition：
Table 2
The medium of the selection of immersion liquid 300 in the present invention is water, and its physical parameter is the constant under the conditions of 20 DEG C.Silicon chip 200
A cycle motion conditions are as shown in table 3：
Table 3
| Silicon chip is acted | + y is to scanning | + x is to stepping | Stabilization | - y is to scanning | - x is to stepping | Stabilization |
| Run duration（s） | 0.05 | 0.03 | 0.02 | 0.05 | 0.03 | 0.02 |
| Speed（m/s） | 0.7 | 1.0 | 0 | 0.7 | 1.0 | 0 |
According to different primary condition, setting two groups of data simulations calculating silicon chips, one time cycle of motion obtain contrast knot
Fruit is as follows：
A group data：
I.e.：With the parameter producing device in above table（e）And device（f）, the analysis result of the A group data for obtaining is such as
Under：
As shown in Figure 11 a to Figure 13, Figure 11 a, 12a, 13 are respectively device（e）Horizontal middle section（z=1.5mm）Speed
Degree cloud charts, pressure distribution cloud atlas and vertical middle section（y=0mm）Pressure distribution cloud atlas；Figure 11 b and 12b are respectively
Device（f）Horizontal middle section（z=1.5mm）VELOCITY DISTRIBUTION cloud atlas and pressure distribution cloud atlas.Understood according in figure, device（e）
Horizontal cross-section pressure difference is about 40Pa, device（f）Horizontal cross-section pressure difference is about 25Pa, and the pressure difference of the vertical middle section of exposure area is about
It is 30Pa.The velocity flow profile that two kinds of devices are shown in main flow 310 is all higher than zero, but device（e）Velocity flow profile more
Uniformly, it is therefore desirable for the horizontal arc B1 and B2 of the second horizontal liquid feeding channel 460 and the second horizontal liquid outlet channel 470 are as far as possible right
Claim, and more than or equal to 70 °, less than or equal to 120 °, expect that value is B1=B2=90 °.
B group data：
I.e.：With the parameter producing device in above table（e）And device（g）, the analysis result for obtaining B group data is as follows：
As shown in Figure 14 a to Figure 16 b, Figure 14 a, 15a, 16a are respectively device（e）And device（g）Horizontal middle section（z=
1.5mm）VELOCITY DISTRIBUTION cloud atlas, pressure distribution cloud atlas and vertical middle section（y=0mm）Pressure distribution cloud atlas, by figure point
Analysis is available：Device（e）Horizontal cross-section pressure difference is about 6Pa, device（g）Horizontal cross-section pressure difference is about 30Pa；Device（e）It is vertical to cut
Face pressure difference is about 17Pa, device（g）Vertical cross-section pressure difference is about 50Pa.Two kinds of devices are shown the flow velocity in main flow 310
Distribution is all higher than zero, but device（e）Flow velocity more uniformly spread, and pressure difference is smaller, it is therefore desirable for the second horizontal feed flow is logical
Road 460 and the upper surface of silicon chip 200 apart from h1 between 1.5~6mm, be desired for more than 5mm, less than 6mm, the second level goes out liquid
Passage 470 and the upper surface of silicon chip 200 apart from h2 are more than or equal to 4mm, less than or equal to 5mm, to obtain smaller equal of pressure oscillation
Mass flow, expects that value is h1=6.0mm, h2=4.5mm.
C group data：
I.e.：With the parameter producing device in above table（e）And device（h）, the analysis result for obtaining C group data is as follows：
Be h1 and h2 as shown in Figure 17 a and 17b, and D1 and D2 relation pair ratio, the flow field water of the immersion liquid 300 for obtaining
The velocity flow profile emulation of flat middle section, wherein device (e) represents h1=6mm, h2=4.5mm, D1=1.5mm, stream during D2=2.0mm
Fast distribution map, device (h) is shown h1=4.5mm, h2=6.0mm, D1=2.0mm, velocity profile during D2=1.5mm, two
Structure is planted to will become apparent from working as h1>H2, and D1<During D2, the flow velocity of immersion liquid 300 is larger and than more uniform, expects that value is D1=
1.5mm, D2=2.0mm.
Therefore the optimum structure that size design of the invention is mutually matched, i.e. device are obtained（e）:
In sum, a kind of immersion liquid limiting mechanism 400 that the present invention is provided, the He of projection objective 100 is limited in by immersion liquid 300
Between silicon chip 200, including first level liquid feeding channel 410, first level liquid outlet channel 420, vertical liquid feeding channel 430, gas-liquid
Recovery approach 440 and air supply channel 450, the first level liquid feeding channel 410 and first level liquid outlet channel 420 are relative to be set
Put, the outlet of the vertical liquid feeding channel 430, gas-liquid recovery approach 440 and air supply channel 450 is arranged in order in leaching from inside to outside
The bottom of liquid limiting mechanism 400, the first level liquid feeding channel 410, vertical liquid feeding channel 430 are respectively connecting to feed flow and set
Standby, the first level liquid outlet channel 420 and gas-liquid recovery approach 440 are respectively connecting to gas-liquid reclaimer, and the supply leads to
Road 450 is connected to air feed equipment, also including the second horizontal liquid feeding channel 460 and the second horizontal liquid outlet channel 470, second water
The horizontal arc of the horizontal liquid outlet channel 470 of flat liquid feeding channel 460 and second is equal, and relative in the projection objective 100
Heart axial symmetry is distributed；The second horizontal liquid feeding channel 460 is more than the second horizontal liquid outlet channel with the distance of the upper surface of silicon chip 200
470 are more than projection objective with the distance of the upper surface of silicon chip 200, the second horizontal liquid outlet channel 470 with the distance of the upper surface of silicon chip 200
100 lower surfaces and the distance of the upper surface of silicon chip 200；The vertical width of the second horizontal liquid feeding channel 460 is less than described second
The vertical width of horizontal liquid outlet channel 470.The present invention is by setting up the second horizontal liquid feeding channel 460 and the second horizontal liquid outlet channel
470, and its positions and dimensions are entered with row constraint, improve the flow velocity and uniformity of main flow 310, and reduce the pressure wave of exposure field
It is dynamic, prevent influence of the pressure oscillation to immersion liquid depth of focus and alignment.
Obviously, those skilled in the art can carry out various changes and modification without deviating from spirit of the invention to invention
And scope.So, if these modifications of the invention and modification belong to the claims in the present invention and its equivalent technologies scope it
Interior, then the present invention is also intended to including including these changes and modification.
Claims (19)
1. a kind of immersion liquid limiting mechanism, immersion liquid is limited between projection objective and silicon chip, including first level liquid feeding channel,
One horizontal liquid outlet channel, vertical liquid feeding channel, gas-liquid recovery approach and air supply channel, the first level liquid feeding channel and
One horizontal liquid outlet channel is oppositely arranged, and the outlet of the vertical liquid feeding channel, gas-liquid recovery approach and air supply channel is from inside to outside
It is arranged in order in the bottom of immersion liquid limiting mechanism, the first level liquid feeding channel, vertical liquid feeding channel are respectively connecting to feed flow
Equipment, the first level liquid outlet channel and gas-liquid recovery approach are respectively connecting to gas-liquid reclaimer, and the air supply channel connects
It is connected to air feed equipment, it is characterised in that the second horizontal liquid feeding channel also including being connected with liquid supply equipment and being reclaimed with gas-liquid sets
Second horizontal liquid outlet channel of standby connection.
2. immersion liquid limiting mechanism as claimed in claim 1, it is characterised in that the second horizontal liquid feeding channel and the second level
The horizontal arc of liquid outlet channel is equal, and relative to the distribution substantially symmetrical about its central axis of the projection objective.
3. immersion liquid limiting mechanism as claimed in claim 1, it is characterised in that the second horizontal liquid feeding channel and silicon chip upper table
The distance in face is more than the distance of the second horizontal liquid outlet channel and silicon chip upper surface, the second horizontal liquid outlet channel and silicon chip upper surface
Distance is more than projection objective lower surface and the distance of silicon chip upper surface.
4. immersion liquid limiting mechanism as claimed in claim 1, it is characterised in that the vertical width of the second horizontal liquid feeding channel
Less than the vertical width of the described second horizontal liquid outlet channel.
5. the immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the projection objective following table
The distance between face and silicon chip upper surface are 0.1~0.2mm.
6. the immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the second horizontal feed flow
The vertical cross-section of passage and the second horizontal liquid outlet channel is that rectangle or arc are horn-like.
7. the immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the immersion liquid limiting mechanism
Height be 9~10mm；The second horizontal liquid feeding channel is 3.1~6.5mm with the distance of silicon chip upper surface；Second water
Flat liquid outlet channel is 3.1~5mm with the distance of silicon chip upper surface.
8. immersion liquid limiting mechanism as claimed in claim 7, it is characterised in that the second horizontal liquid feeding channel and silicon chip upper table
The distance in face is 6.0mm；The second horizontal liquid outlet channel is 4.5mm with the distance of silicon chip upper surface.
9. the immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the second horizontal feed flow
The horizontal arc of passage and the second horizontal liquid outlet channel is 70 °~120 °.
10. immersion liquid limiting mechanism as claimed in claim 9, it is characterised in that the second horizontal liquid feeding channel and the second water
The horizontal arc of flat liquid outlet channel is 90 °.
The 11. immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the second horizontal feed flow
The vertical width of passage is 1.5~2.0mm, and the vertical width of the second horizontal liquid outlet channel is 2.0~2.5mm.
12. immersion liquid limiting mechanisms as claimed in claim 11, it is characterised in that the vertical width of the second horizontal liquid feeding channel
It is 1.5mm to spend, and the vertical width of the second horizontal liquid outlet channel is 2.0mm.
The 13. immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the second horizontal feed flow
Passage is connected to independent positive pressure source, and the second horizontal liquid outlet channel is connected to independent negative pressure source.
The 14. immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the vertical liquid feeding channel
Outlet can be elongated slit, or uniform circular or square aperture.
15. immersion liquid limiting mechanisms as claimed in claim 14, it is characterised in that the width of the slit 0.1~0.2mm it
Between.
The 16. immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the gas-liquid recovery approach
Outlet can be elongated slit, or uniform circular or square aperture.
17. immersion liquid limiting mechanisms as claimed in claim 16, it is characterised in that the width of the slit 0.4~0.6mm it
Between.
The 18. immersion liquid limiting mechanism as any one of Claims 1 to 4, it is characterised in that the air supply channel structure
It is elongated slit or uniform circular or square aperture.
19. immersion liquid limiting mechanisms as claimed in claim 18, it is characterised in that the width of the slit 0.1~0.2mm it
Between.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1847987A (en) * | 2005-04-05 | 2006-10-18 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN101470360A (en) * | 2002-11-12 | 2009-07-01 | Asml荷兰有限公司 | Immersion lithographic apparatus and device manufacturing method |
| CN101604122A (en) * | 2003-06-27 | 2009-12-16 | Asml荷兰有限公司 | Lithographic equipment and device making method |
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| US7291569B2 (en) * | 2005-06-29 | 2007-11-06 | Infineon Technologies Ag | Fluids for immersion lithography systems |
| JP5482784B2 (en) * | 2009-03-10 | 2014-05-07 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
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| CN101470360A (en) * | 2002-11-12 | 2009-07-01 | Asml荷兰有限公司 | Immersion lithographic apparatus and device manufacturing method |
| CN101604122A (en) * | 2003-06-27 | 2009-12-16 | Asml荷兰有限公司 | Lithographic equipment and device making method |
| CN1847987A (en) * | 2005-04-05 | 2006-10-18 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
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