CN104916747B - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN104916747B CN104916747B CN201410094885.6A CN201410094885A CN104916747B CN 104916747 B CN104916747 B CN 104916747B CN 201410094885 A CN201410094885 A CN 201410094885A CN 104916747 B CN104916747 B CN 104916747B
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- light
- layer
- emitting
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- emitting device
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- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 144
- 230000004888 barrier function Effects 0.000 claims description 31
- 238000000605 extraction Methods 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical group [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 102100035115 Testin Human genes 0.000 description 1
- 101710070533 Testin Proteins 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting element, comprising: a substrate; a light-emitting laminate disposed above the substrate and capable of emitting light of Infrared (IR) wavelength; and a semiconductor window layer composed of AlGaInP series material and located between the substrate and the light emitting laminated layer.
Description
Technical Field
The present invention relates to a light emitting device, and more particularly, to an infrared light emitting device.
Background
Light-Emitting diodes (LEDs) have good optoelectronic properties such as low power consumption, low heat generation, long operating life, shock resistance, small volume, fast response speed, and stable output Light wavelength, and are therefore suitable for various applications.
Among them, Infrared light emitting diodes (IR LEDs) are used more and more widely, and are conventionally used in remote controllers and monitors, and are recently developed to be used in smart phones and touch panels. Because each touch panel uses a relatively large number of infrared light emitting diodes, the price of the touch panel is also lower than that of other applications, and it is necessary to reduce the cost of the infrared light emitting diodes.
FIG. 1 is a cross-sectional view of a conventional infrared light emitting device, as shown in FIG. 1, the light emitting device includes a permanent substrate 101, on which a light emitting stack 102, a metal reflective layer 103, a barrier layer 104, and a bonding structure 105 are sequentially formed from top to bottom. In addition, a first electrode 106E1 and its extension electrode 106E 1' are disposed on the light emitting stack 102, and a second electrode 106E2 is disposed on the permanent substrate 101. The first electrode 106E1, its extension electrode 106E 1' and the second electrode 106E2 are used to transmit current. The light emitting layer 102 can emit light in an infrared band. In the manufacturing process, the light emitting stack 102 of the conventional infrared light emitting device is originally grown on a growth substrate (not shown), and the originally separated light emitting stack 102 and the permanent substrate 101 are bonded by the bonding structure 105, so that the metal reflective layer 103 is formed on the light emitting stack 102 before the two are bonded. However, as mentioned above, when the specific application, such as the application of touch panel, requires low cost, the bonding process and the metal reflective layer 103 are all the main reasons for high cost. In addition, in the application of touch panel, it is also required to emit light from a better side to achieve a larger light-emitting angle, and it has been found in practical applications that the above-mentioned conventional infrared light-emitting device is difficult to meet the requirements in this respect.
Disclosure of Invention
To solve the above problems, the present invention discloses a light emitting device. The disclosed light-emitting element includes: a substrate; a light-emitting laminate disposed above the substrate and capable of emitting light of Infrared (IR) wavelength; and a semiconductor window layer composed of AlGaInP series material and located between the substrate and the light emitting laminated layer.
Drawings
Fig. 1 shows a conventional light emitting device.
Fig. 2 shows a light-emitting element according to a first embodiment of the present invention.
Fig. 3 shows a second electrode pattern in the light emitting device according to the first embodiment of the present invention.
Fig. 4 shows another pattern of the second electrode in the light emitting device according to the first embodiment of the present invention.
Description of the symbols
101 permanent substrate
102 light emitting stack
103 metal reflective layer
104 barrier layer
105 joint structure
106E1 first electrode
106E 1' (of the first electrode) extended electrode
106E2 second electrode
20 base plate
21 buffer layer
22 semiconductor window layer
23 light emitting laminate
231 first conductivity type semiconductor layer
232 light emitting layer
232b1,232b2,…232bnBarrier layer
232w1,232w2,…232wn-1Well layer
233 second conductivity type semiconductor layer
24 lateral light extraction layer
25 contact layer
26 first electrode
26a (of the first electrode) extension electrode
27 second electrode
S1 lower surface of substrate
S2 side surface of substrate
S3 Upper surface of light emitting element
Detailed Description
FIG. 2 shows the present inventionThe light-emitting element of the first embodiment is described. As shown in fig. 2, the light emitting device includes: a substrate 20; a light-emitting laminate 23 disposed over the substrate 20 and emitting light having an Infrared (IR) wavelength; and a semiconductor window layer 22 made of AlGaInP series material and located between the substrate 20 and the light emitting stack 23. The substrate 20 includes, for example, a gallium arsenide (GaAs) substrate. The Infrared (IR) wavelength is between about 750nm and 1100nm, and in one embodiment, the Infrared (IR) wavelength is greater than 900nm, such as 940 nm. The semiconductor window layer 22 is a single layer structure and is in direct contact with the light emitting stack 23. In the fabrication process, after the semiconductor window layer 22 is formed, the type or ratio of the introduced gas is adjusted on the same machine table to form the light emitting stack 23. In one embodiment, the semiconductor window layer 22 comprises (Al)xGa1-x)0.5In0.5P, wherein x is 0.1-1. It is noted that the light-emitting stack 23 has a first refractive index n1The semiconductor window layer 22 has a second refractive index n2First refractive index n1Greater than the second refractive index n2At least 0.2 or more. Therefore, the light of the infrared wavelength emitted from the light-emitting laminate 23 travels from the high refractive index to the low refractive index between the light-emitting laminate 23 and the semiconductor window layer 22, and the first refractive index n of the light-emitting laminate 23 is added1A second refractive index n with respect to the semiconductor window layer 222The difference between the two layers makes the light of the infrared wavelength emitted by the light-emitting laminated layer 23 easily generate total reflection at the semiconductor window layer 22, i.e. the semiconductor window layer 22 provides a single-layer structure of reflector function, and provides better lateral reflection function compared to the general Distributed Bragg Reflector (DBR) structure. A general Distributed Bragg Reflector (DBR) structure requires tens of layers to achieve a certain degree of reflectivity, and its reflection function is limited to a certain range of forward angles, generally, 0-17 degrees from the normal of the reflector structure; in the present embodiment, only the semiconductor window layer 22 with a single layer structure can reflect light at an angle of 50 to 90 degrees from the normal of the semiconductor window layer 22, thereby providing better side light emission to form a larger light emission angle, and the overall light emission power is improved due to the improved light extraction. In the actual testIn the above, the light emitting devices emitting 850nm and 940nm light respectively are tested, and the light emitting stack 23 of the embodiment of the invention employs aluminum gallium arsenide (AlGaAs) in the first electrical semiconductor layer 231, and has the first refractive index n1About 3.4, the semiconductor window layer 22 is made of (Al)0.6Ga0.4)0.5In0.5P having a second refractive index n2About 2.98, the difference between the two refractive index values is about 0.42, which is about 17% greater than that of the other light emitting device under the same conditions except that only the semiconductor window layer 22 is replaced by aluminum gallium arsenide (AlGaAs) (refractive index is about 3.4), and the light emitting power of the 850nm light emitting device of the embodiment of the invention is increased from 4.21mW to 4.91 mW; compared with the light emitting device with 940nm of the invention, the light emitting power of the light emitting device is increased to 5.27mW from 5.06mW, which is increased by about 4%. In addition, the semiconductor window layer 22 is directly contacted with the light emitting stack layer 23 in terms of manufacturing process or cost, and is a single layer structure, so that the manufacturing process is simplified and the cost is lower compared with the general distributed bragg reflection structure. In terms of thickness, in one embodiment, the semiconductor window layer 22 has a thickness less than 1 μm to achieve good reflection.
The light-emitting stack 23 includes a first electrical type semiconductor layer 231 on the semiconductor window layer 22; an active layer 232 on the first electrical type semiconductor layer 231; and a second conductivity type semiconductor layer 233 on the active layer 232, wherein the first conductivity type semiconductor layer 231 is in direct contact with the semiconductor window layer 22. The first conductivity type semiconductor layer 231, the active layer 232, and the second conductivity type semiconductor layer 233 are formed of III-V materials. The first electrical type semiconductor layer 231 and the second electrical type semiconductor layer 233 are electrically different, for example, the first electrical type semiconductor layer 231 is an n-type semiconductor layer, and the second electrical type semiconductor layer 233 is a p-type semiconductor layer, and when an external power is applied, the first electrical type semiconductor layer 231 and the second electrical type semiconductor layer 233 generate carriers (electrons/holes) and recombine in the active layer 232 to generate light, respectively. In one embodiment, the first electrical type semiconductor layer 231 is doped with tellurium (Te) or selenium (Se). In one embodiment, the active layer 232 comprises a multiple quantum well structure (MQW) comprising a plurality of barrier layers, such as barrier layer 232b1,232b2,…232bnAnd one or more well layersE.g. well layer 232w1,232w2,…232wn-1With a well layer between two adjacent barrier layers, e.g. two adjacent barrier layers 232b1And 232b2With a well layer 232w therebetween1. Wherein the plurality of barrier layers 232b1,232b2,…232bnThe barrier layer (i.e., the barrier layer 232 b) nearest to the first electrical type semiconductor layer 2311) And a barrier layer (i.e., barrier layer 232 b) nearest to the second electrical type semiconductor layer 233n) Phosphorus (P) is not contained, and the rest of the barrier layer (barrier layer 232 b)2,…232bn-1) Phosphorus (P) is contained. In one embodiment, the well layer 232w1,232w2,…232wn-1Comprises indium gallium arsenide (InGaAs), wherein the indium content is about 2% -30% and is adjusted according to the wavelength of the light to be emitted by the light emitting stack 23, so as to reach the wavelength range of the infrared ray. Due to the well layer 232w1,232w2,…232wn-1The barrier layer (barrier layer 232 b) containing indium (In) increases the lattice constant2,…232bn-1) Phosphorus (P) in the medium allows the lattice constant to be small and the overall lattice constant to be adjusted back to an appropriate range. In one embodiment, the barrier layer 232b2,…232bn-1Including, for example, aluminum gallium arsenide phosphide (AlGaAsP). As described above, the barrier layer (barrier layer 232 b) closest to the first electrical semiconductor layer 2311) And a barrier layer (barrier layer 232 b) nearest to the second electrical type semiconductor layer 233n) The thickness of the material is thicker, the lattice constant of the material is not too small because the material does not contain phosphorus (P); while the thicker barrier layer 232b1And barrier layer 232bnThe diffusion barrier effect for the dopants in the adjacent first electrical type semiconductor layers 231 and second electrical type semiconductor layers 233 can be improved. In one embodiment, the barrier layer 232b1And barrier layer 232bnIncluding, for example, aluminum gallium arsenide (AlGaAs).
The light emitting device of the first embodiment of the present invention further comprises a buffer layer 21 between the substrate 20 and the semiconductor window layer 22, the buffer layer 21 being doped with silicon (Si), such as silicon (Si) -doped gallium arsenide (GaAs). As mentioned above, the first electrical type semiconductor layer 231 is doped with tellurium (Te) or selenium (Se), and the buffer layer 21 is doped with silicon (Si), which makes the light emitting device more flexible in terms of adjustment, such as adjustment of lattice constant, in the manufacturing process. In addition, the light emitting device of the first embodiment of the invention further includes a lateral light extraction layer 24 on the light emitting stack 23, a contact layer 25 on the lateral light extraction layer 24, and a first electrode 26 on the contact layer 25, and a second electrode 27 on the substrate 20. The lateral light extraction layer 24 facilitates light extraction, particularly since side light extraction is increased due to the increased thickness, and may be relatively thick, such as about 5 μm to 30 μm, in one embodiment, the lateral light extraction layer 24 comprises zinc (Zn) -doped gallium arsenide (GaAs) having a thickness of about 10 μm. The contact layer 25 is used to form an ohmic contact with the first electrode 26 thereon to reduce the resistance, and in one embodiment, the contact layer 25 comprises gallium arsenide (GaAs) doped with zinc (Zn). The lateral light extraction layer 24 and the contact layer 25 are made of gallium arsenide (GaAs) doped with zinc (Zn) to simplify the configuration of the machine in the fabrication process, but it should be noted that the lateral light extraction layer 24 and the contact layer 25 have different functions, and in order to form the ohmic contact, the zinc (Zn) content in the contact layer 25 is much higher than that of the lateral light extraction layer 24, so that the ohmic contact can be formed. The first electrode 26 may be provided with an extended electrode 26a to facilitate current spreading. It should be noted that when the light of the infrared wavelength emitted by the light emitting stack 23 travels toward the substrate 20, there may still be a portion of the semiconductor window layer 22 that is not totally reflected. As mentioned above, in a specific application, a larger light-emitting angle may be required, and therefore, as shown in the figure, in the present embodiment, the second electrode 27 is a patterned electrode, and please refer to fig. 3 and fig. 4 for a more detailed description, when viewing from the top view (top view), the pattern of the second electrode 27 may be, for example, a grid (mesh) as shown in fig. 3, fig. 3 shows that a grid-shaped gold germanium (GeAu) second electrode 27 is formed on a gallium arsenide (GaAs) substrate 20; or as shown in fig. 4, the pattern of the second electrode 27 may be a plurality of circles, and fig. 4 shows that a gallium arsenide (GaAs) substrate 20 is formed with a plurality of round-shaped gold germanium (GeAu) second electrodes 27; the second electrode 27 thus patterned forms scattering centers for light that is not totally reflected in the semiconductor window layer 22, which increases scattering and increases the angle of light output. In addition, roughening (not shown) may be selectively formed on the lower surface S1 of the substrate 20 where the second electrode 27 is not disposed, so as to increase light scattering, so that light is easily emitted from the side surface of the substrate 20, and even the side surface S2 of the substrate 20 and the upper surface S3 of the light emitting device where the first electrode 26 is not disposed may be roughened (not shown).
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify and change the above-described embodiments without departing from the technical principles and spirit of the present invention. The scope of the invention is therefore indicated by the appended claims.
Claims (15)
1. A light emitting element comprising:
a substrate;
a light emitting stack over the substrate and emitting light of an Infrared (IR) wavelength, the light emitting stack including a first electrical semiconductor layer and a second electrical semiconductor layer, wherein the first electrical semiconductor layer is an aluminum gallium arsenide (AlGaAs) material; and
and a semiconductor window layer made of AlGaInP series material and located between the substrate and the light-emitting laminated layer, wherein the semiconductor window layer is of a single-layer structure and is in direct contact with the first electrical semiconductor layer.
2. The light-emitting element according to claim 1, wherein the substrate comprises gallium arsenide (GaAs).
3. The light-emitting device according to claim 1, wherein the light-emitting laminate has a first refractive index n1The semiconductor window layer has a second refractive index n2The first refractive index n1Greater than the second refractive index n2At least 0.2 or more.
4. The light-emitting element according to claim 1, wherein the semiconductor window layer comprises (Al)xGa1-x)0.5In0.5P, wherein x is 0.1-1.
5. The light-emitting device according to claim 1, wherein the light-emitting laminate comprises:
and the active layer is positioned between the first electrical semiconductor layer and the second electrical semiconductor layer.
6. The light-emitting device according to claim 5, wherein the active layer comprises a multiple quantum well structure (MQW) comprising a plurality of barrier layers and a well layer between two adjacent barrier layers, wherein the barrier layer closest to the first electrical semiconductor layer and the barrier layer closest to the second electrical semiconductor layer among the plurality of barrier layers are free of phosphorus (P), and the rest of the barrier layers are free of phosphorus (P).
7. The light emitting device of claim 1, further comprising a buffer layer of silicon (Si) -doped gallium arsenide (GaAs) between the substrate and the semiconductor window layer.
8. The light-emitting device according to claim 1, further comprising a lateral light extraction layer on the light-emitting layer stack.
9. The light emitting device of claim 1, wherein the semiconductor window layer has a thickness of less than 1 μm.
10. The light emitting device of claim 1, wherein the Infrared (IR) wavelength is between about 750nm to 1100 nm.
11. The light-emitting device according to claim 1, wherein the first electrical semiconductor layer is doped with tellurium (Te) or selenium (Se).
12. The light-emitting device of claim 1, further comprising a patterned bottom electrode disposed below the substrate.
13. The light-emitting element according to claim 12, wherein the pattern of the lower electrode is a mesh (mesh) or a plurality of circles.
14. The light emitting device of claim 1, wherein the Infrared (IR) wavelength is greater than 900nm and the semiconductor window layer has a thickness less than 1 μ ι η.
15. The light-emitting element according to claim 1, wherein the light-emitting element does not have any distributed bragg reflector structure (DBR) between the substrate and the light-emitting laminated layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911163403.7A CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
| CN201410094885.6A CN104916747B (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
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| CN201410094885.6A CN104916747B (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
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| CN201911163403.7A Division CN110854249A (en) | 2014-03-14 | 2014-03-14 | Light emitting element |
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| CN104916747A CN104916747A (en) | 2015-09-16 |
| CN104916747B true CN104916747B (en) | 2019-12-20 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| CN103500784A (en) * | 2013-09-26 | 2014-01-08 | 厦门乾照光电股份有限公司 | Epitaxial structure, growth process and chip process of near-infrared light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614734A (en) * | 1995-03-15 | 1997-03-25 | Yale University | High efficency LED structure |
| JP3423203B2 (en) * | 1997-03-11 | 2003-07-07 | シャープ株式会社 | Method for manufacturing semiconductor laser device |
| US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| JP4457826B2 (en) * | 2004-09-22 | 2010-04-28 | 三菱化学株式会社 | Light-emitting diode using nitride semiconductor |
| CN100466310C (en) * | 2005-02-25 | 2009-03-04 | 日立电线株式会社 | Light emitting diode and method for fabricating same |
| JP2006269759A (en) * | 2005-03-24 | 2006-10-05 | Sharp Corp | Window structure semiconductor laser device and its manufacturing method |
| JP2007005591A (en) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | Semiconductor light emitting device |
| JP4835377B2 (en) * | 2006-10-20 | 2011-12-14 | 日立電線株式会社 | Semiconductor light emitting device |
| JP2009010304A (en) * | 2007-06-29 | 2009-01-15 | Dowa Electronics Materials Co Ltd | Light-emitting element with current confinement structure and method of manufacturing the same |
| WO2010028146A2 (en) * | 2008-09-08 | 2010-03-11 | 3M Innovative Properties Company | Electrically pixelated luminescent device |
| JP2010245312A (en) * | 2009-04-07 | 2010-10-28 | Hitachi Cable Ltd | Light-emitting element |
| KR101054983B1 (en) * | 2010-03-29 | 2011-08-05 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device, light emitting device package |
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2014
- 2014-03-14 CN CN201911163403.7A patent/CN110854249A/en active Pending
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| CN103500784A (en) * | 2013-09-26 | 2014-01-08 | 厦门乾照光电股份有限公司 | Epitaxial structure, growth process and chip process of near-infrared light emitting diode |
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| CN110854249A (en) | 2020-02-28 |
| CN104916747A (en) | 2015-09-16 |
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