CN104911544B - Temperature control disk - Google Patents
Temperature control disk Download PDFInfo
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- CN104911544B CN104911544B CN201510359908.6A CN201510359908A CN104911544B CN 104911544 B CN104911544 B CN 104911544B CN 201510359908 A CN201510359908 A CN 201510359908A CN 104911544 B CN104911544 B CN 104911544B
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- heating dish
- disk body
- temperature
- disk
- heat transfer
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Abstract
A kind of temperature control disk, mainly solves existing semiconductor coated film equipment heat exchanger effectiveness and production capacity is relatively low, and wafer temperature not enough uniformly causes the technical problem of film failure.It mainly includes three parts, i.e.,：Disk body and heating dish pedestal under disk body, heating dish in heating dish.It is attached between each part by the way of welding.Temperature control is carried out to heating dish and wafer using medium and heat transfer gas, there are different structures on each part, form the media channel and heat transfer gas passage of heating dish, and then control the temperature of heating dish, the temperature control disk is cooled down and heated using medium, the circulation utilized the medium, the control of trip temperature is entered to heating dish, and media channel is distributed in inside heating dish.This temperature control dish structure is reasonable, its heat transfer gas air intake structure can make between heating dish and wafer it is quick, uniform full of heat-conducting gas with so that the temperature of heating dish is quick, be uniformly transmitted to wafer, or will be exported in the temperature of wafer rapidly conduction to heating dish.It can be widely used in semiconductive thin film deposition arts.
Description
Technical field
Dish structure is heated the present invention relates to a kind of semiconductor coated film equipment controllable temperature, it is internal logical comprising heating dish medium
Road, heat transfer gas passage, to realize to the quick, accurate of wafer temperature, equal control.Belong to semiconductive thin film deposition applications
And manufacturing technology field.
Background technology
Semiconductor equipment generally requires to make wafer and chamber be heated or maintained at deposition reaction institute when carrying out deposition reaction
The temperature needed, so heating dish must possess heating arrangement to meet the purpose preheated to wafer.Most of semiconductive thin films
Depositing device, plasma is also had in deposition process and participates in deposition reaction, release and chemistry because of energy of plasma
The temperature of the energy release reacted between gas, heating dish and wafer can be continuous with the increase temperature meeting of radio frequency and process time
Rise, if could be carried out after the technique under carrying out identical temperature is, it is necessary to wait heating dish to drop to identical temperature, so meeting
Take a substantial amount of time, the production capacity of equipment compares relatively low.Too fast, wafer and heating if the temperature of wafer and heating dish heats up
The temperature that the temperature of disk can be subjected to beyond film, causes film to fail.
In order to solve heating dish temperature rise in technical process it is too fast cooling it is slow the problem of, it would be desirable to have can automatically adjust plus
The system of temperature of heat plate, to ensure the temperature of heating dish.In order to preferably control the temperature of wafer, it would be desirable to by the temperature of wafer
Degree is delivered in heating dish, and the temperature of crystal column surface is controlled by controlling the temperature of heating dish.But semiconductive thin film deposition is anti-
Should carry out under vacuum mostly, vacuum condition heat transfer is mainly by radiation, and heat conduction efficiency is low, and heat can be in crystal column surface
Aggregation.In order to preferably need to be passed through one layer of heat conduction Jie in the heat transfer on wafer to heating dish, between heating dish and wafer
Matter, to be rapidly performed by heat exchange between heating dish and wafer, while can preferably improve the uniformity of wafer temperature.
The content of the invention
The present invention mainly solves existing semiconductor coated film equipment heat exchanger effectiveness and production capacity for the purpose of solving the above problems
Relatively low, wafer temperature not enough uniformly causes the technical problem of film failure.
To achieve the above object, the present invention uses following technical proposals：Temperature control disk, it is main to include three parts, i.e.,：Heating
Disk body 3 and heating dish pedestal 4 under disk body 1, heating dish on disk.It is attached between each part by the way of welding.The present invention
Temperature control is carried out to heating dish and wafer using medium and heat transfer gas.There are different structures on each part, formed and added
The media channel and heat transfer gas passage of hot plate, and then control the temperature of heating dish.This heating dish is carried out cold using medium
But and heating, the circulation utilized the medium enters the control of trip temperature to heating dish, and media channel is distributed in inside heating dish.In order to
Preferably control also have heat transfer gas passage, distance of the heat transfer gas passage away from card inside the temperature of wafer, heating dish
Big compared with distance of the media channel away from card, being so can be preferably by the heat transfer on wafer to heating dish.Can
More effectively control the temperature of wafer.
Beneficial effects of the present invention and feature：
This temperature control dish structure is reasonable, by controlling the temperature of medium to realize the control to heating dish temperature.Heat transfer gas
Air intake structure can make between heating dish and wafer it is quick, uniform full of heat-conducting gas with cause the temperature of heating dish it is quick,
It is uniform to be transmitted to wafer, or will be exported in the temperature of wafer rapidly conduction to heating dish.It can be widely used in and partly lead
Body thin film deposition arts.
Brief description of the drawings
Fig. 1 is heating dish Structure explosion diagram.
Fig. 2 is heating dish upper disk surface structural representation.
Fig. 3 is card structural representation under heating dish.
Fig. 4 is card sectional view under heating dish.
Shown in figure：
1st, disk body in heating dish；2nd, ceramics pole；3rd, disk body under heating dish；4th, heating dish pedestal；5th, through hole；6th, thermally conductive gas
Body opening；7th, media channel；8th, ceramic post holes；9th, heat transfer gas venthole；10th, medium import；11st, media outlet；12nd, thermoelectricity
Even hole；13rd, the installation of TC screwed hole；14th, heat transfer gas assignment channel.
The present invention is further illustrated with reference to the accompanying drawings and examples.
Embodiment
Embodiment
As Figure 1-4, temperature control disk, it is main to include three parts, i.e.,：In heating dish under disk body 1, heating dish disk body 3 and
Heating dish pedestal 4.
The lower surface of disk body 1 is provided with media channel hole 7 in the heating dish (layout of media channel is as shown in Figure 2)；Institute
The lower surface for stating disk body 1 in heating dish is also provided with a meter thermally conductive gas body opening 6 and a thermocouple hole 12 for word distribution；It is described to add
The lower surface of disk body 1 is formed with ceramic post holes 8 in hot plate.
Disk body 3 is provided with heat transfer gas assignment channel 14 under the heating dish, and for distributing conduction gas, profile is such as
Shown in Fig. 4.There are heat transfer gas venthole 9, heat transfer gas venthole 9 in the corresponding card of heat transfer gas assignment channel 14
It is corresponding with thermally conductive gas body opening 6；Be provided with the corresponding heating dish in two ends of media channel 7 at disk body 3 medium import 10 and
Media outlet 11；Under heating dish corresponding with the position of thermocouple hole 12 the installation of TC screwed hole 13 is provided with disk body 3；With ceramics
Under the corresponding heating dish of post holes 8 through hole 5 is provided with disk body 3.
The inside of heating dish pedestal 4 is provided with corresponding media channel and thermocouple mounting hole.By ceramics pole 2, installed in pottery
In porcelain knob hole 8, the through hole 5 of disk body 3 under the correspondence heating dish of ceramics pole 2, then by disk body 3 under disk body in heating dish 1 and heating dish
Welded, welding is welded with heating dish pedestal 4 again after completing, complete the processing of whole temperature control disk.
Claims (1)
1. a kind of temperature control disk, it is characterised in that：It mainly includes three parts, i.e.,：In heating dish under disk body, heating dish disk body and
It is attached between heating dish pedestal, each part by the way of welding, using medium and heat transfer gas to heating dish and crystalline substance
Circle carries out having different structures on temperature control, each part, forms the media channel and heat transfer gas passage of heating dish, enters
And the temperature of heating dish is controlled, the temperature control disk is cooled down and heated using medium, the circulation utilized the medium, and heating dish is entered
The control of trip temperature, media channel is distributed in inside heating dish, and the lower surface of disk body is provided with media channel hole in the heating dish；
The lower surface of disk body is also provided with a meter thermally conductive gas body opening and a thermocouple hole for word distribution in the heating dish；The heating
The lower surface of disk body is formed with ceramic post holes on disk；Disk body is provided with heat transfer gas assignment channel under the heating dish, for dividing
With conduction gas, there are heat transfer gas venthole, heat transfer gas venthole in the corresponding card of heat transfer gas assignment channel
It is corresponding with thermally conductive gas body opening, it is provided with medium import at disk body under the corresponding heating dish in two ends of media channel and medium goes out
Mouthful, the installation of TC screwed hole is provided with disk body under heating dish corresponding with thermocouple hole position, it is corresponding with ceramic post holes to add
Through hole is provided with hot plate on disk body；The inside of the heating dish pedestal is provided with corresponding media channel and thermocouple mounting hole, will
Ceramics pole, in ceramic post holes, the through hole of disk body under ceramics pole correspondence heating dish, then by disk body in heating dish and heating
Disk body is welded under disk, and welding is welded with heating dish pedestal again after completing, and completes the processing of whole temperature control disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510359908.6A CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510359908.6A CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104911544A CN104911544A (en) | 2015-09-16 |
| CN104911544B true CN104911544B (en) | 2017-08-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510359908.6A Active CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106609364A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Thin film deposition equipment heating base plate of circulation medium automatic temperature control structure |
| CN106609354A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Temperature controllable base table of semiconductor coating equipment |
| CN106609365A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Two-channel temperature control device for semiconductor coating equipment |
| CN106611733B (en) * | 2015-10-22 | 2020-07-31 | 沈阳拓荆科技有限公司 | Many imports cavity heating support frame |
| CN106637142A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber temperature control disk |
| CN106637139A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber cavity temperature controllable matrix carrier structure |
| CN106637132B (en) * | 2015-10-29 | 2020-01-10 | 沈阳拓荆科技有限公司 | Wafer reaction table with circulating medium for automatic temperature control and heat conduction gas for temperature conduction |
| CN106637144A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Cavity temperature control disc with air exhaust holes |
| EP3279364B1 (en) * | 2016-08-03 | 2021-10-06 | IHI Hauzer Techno Coating B.V. | Apparatus for coating substrates |
| CN110894591A (en) * | 2019-11-12 | 2020-03-20 | 江苏长电科技股份有限公司 | Cooling disc and cooling method used in magnetron sputtering process |
| CN115418628B (en) * | 2022-08-29 | 2023-08-18 | 拓荆科技股份有限公司 | Air path system of heating plate, control method and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0467390A1 (en) * | 1990-07-20 | 1992-01-22 | Tokyo Electron Limited | Support table for plate-like body and processing apparatus using the table |
| CN1833312A (en) * | 2003-04-07 | 2006-09-13 | 东京毅力科创株式会社 | Loading table and heat treating apparatus having the loading table |
| CN101919029A (en) * | 2008-01-18 | 2010-12-15 | 高美科株式会社 | Substrate-supporting device, and a substrate-processing device having the same |
| CN201817546U (en) * | 2010-10-28 | 2011-05-04 | 理想能源设备(上海)有限公司 | Substrate supporting base and chemical vapor deposition equipment applying same |
| CN202905683U (en) * | 2012-09-19 | 2013-04-24 | 中微半导体设备(上海)有限公司 | Substrate bearing device capable of uniformly adjusting surface temperature |
-
2015
- 2015-06-25 CN CN201510359908.6A patent/CN104911544B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0467390A1 (en) * | 1990-07-20 | 1992-01-22 | Tokyo Electron Limited | Support table for plate-like body and processing apparatus using the table |
| CN1833312A (en) * | 2003-04-07 | 2006-09-13 | 东京毅力科创株式会社 | Loading table and heat treating apparatus having the loading table |
| CN101919029A (en) * | 2008-01-18 | 2010-12-15 | 高美科株式会社 | Substrate-supporting device, and a substrate-processing device having the same |
| CN201817546U (en) * | 2010-10-28 | 2011-05-04 | 理想能源设备(上海)有限公司 | Substrate supporting base and chemical vapor deposition equipment applying same |
| CN202905683U (en) * | 2012-09-19 | 2013-04-24 | 中微半导体设备(上海)有限公司 | Substrate bearing device capable of uniformly adjusting surface temperature |
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| Publication number | Publication date |
|---|---|
| CN104911544A (en) | 2015-09-16 |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |
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