CN106544648A - Without air flue type temperature control disk - Google Patents

Without air flue type temperature control disk Download PDF

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Publication number
CN106544648A
CN106544648A CN201510589568.6A CN201510589568A CN106544648A CN 106544648 A CN106544648 A CN 106544648A CN 201510589568 A CN201510589568 A CN 201510589568A CN 106544648 A CN106544648 A CN 106544648A
Authority
CN
China
Prior art keywords
heating dish
disk
disk body
temperature control
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510589568.6A
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Chinese (zh)
Inventor
吕光泉
吴凤丽
郑英杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Piotech Inc
Original Assignee
Piotech Shenyang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Piotech Shenyang Co Ltd filed Critical Piotech Shenyang Co Ltd
Priority to CN201510589568.6A priority Critical patent/CN106544648A/en
Publication of CN106544648A publication Critical patent/CN106544648A/en
Pending legal-status Critical Current

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Abstract

Without air flue type temperature control disk, mainly solve existing semiconductor coated film equipment heat exchanger effectiveness and production capacity is relatively low, wafer temperature not enough uniformly causes the technical problem of thin film failure.It mainly includes three parts, i.e.,:Disk body and heating dish pedestal under disk body, heating dish in heating dish.It is attached by the way of welding between each part.The present invention carries out temperature control using medium heating dish.There are different structures on each part, form the media channel of heating dish, and then control the temperature of heating dish.This heating dish is cooled down using medium and is heated, the circulation for utilizing the medium, and enters the control of trip temperature to heating dish, and media channel is distributed in inside heating dish.The inside of the present invention includes heating dish media channel, heat transfer gas passage, to realize to the quick, accurate of wafer temperature, equal control.It is relatively low with simple structure, cost and the characteristics of be easily achieved.Can be widely used in semiconductive thin film deposit manufacture and applied technical field.

Description

Without air flue type temperature control disk
Technical field
The present invention relates to a kind of semiconductor coated film equipment controllable temperature heating dish, is exactly a kind of depletion of QI Road formula temperature control disk, belongs to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment generally requires to make wafer and chamber be heated or maintained at sinking when deposition reaction is carried out Temperature required for product reaction, so heating dish must possess heating arrangement to meet to the mesh of wafer preheating 's.Most of semiconductor thin film deposition equipments, also have plasma in deposition process and participate in deposition instead Should, because energy of plasma release and chemical gas between the energy release reacted, heating dish and wafer Temperature can constantly can rise with the increase temperature of radio frequency and process time, if carrying out phase equality of temperature Technique under degree, needs to wait heating dish just carry out after dropping to identical temperature, can so expend a large amount of Time, the production capacity of equipment compares relatively low.Too fast, the wafer if temperature of wafer and heating dish heats up The temperature is subjected to by thin film can be exceeded with the temperature of heating dish, cause thin film to fail.
In order to solve the problems, such as that the too fast cooling of heating dish temperature rise is slow in technical process, it would be desirable to which having can be certainly The dynamic system for adjusting heating dish temperature, ensures the temperature of heating dish.In order to preferably control the temperature of wafer Degree, it would be desirable to by the temperature transfer of wafer to heating dish, controlled by the temperature of control heating dish The temperature of crystal column surface.But semiconductive thin film deposition reaction is to carry out under vacuum mostly, vacuum condition , mainly by radiation, heat conduction efficiency is low for conduction of heat, and heat can be assembled in crystal column surface.In order to preferably will Heat transfer on wafer needs to be passed through one layer of heat-conducting medium in heating dish, between heating dish and wafer, with Just heat exchange is rapidly performed by between heating dish and wafer, while the uniformity of wafer temperature preferably can be improved.
The content of the invention
The present invention mainly solves existing semiconductor coated film equipment heat exchange effect for the purpose of solving the above problems Rate and production capacity are relatively low, and wafer temperature not enough uniformly causes the technical problem of thin film failure.
For achieving the above object, the present invention adopts following technical proposals:It is without air flue type temperature control disk, main to wrap Three parts are included, i.e.,:Disk body and heating dish pedestal under disk body, heating dish in heating dish.Between each part It is attached by the way of welding.The present invention carries out temperature control using medium heating dish.Each part On have a different structures, form the media channel of heating dish, and then control the temperature of heating dish.This heating Disk is cooled down using medium and is heated, the circulation for utilizing the medium, and enters the control of trip temperature to heating dish, Media channel is distributed in inside heating dish.
Beneficial effects of the present invention and feature:
The inside of the present invention includes heating dish media channel, heat transfer gas passage, to realize to wafer temperature Quick, the accurate, equal control of degree.Spy that is relatively low with simple structure, cost and being easily achieved Point.Can be widely used in semiconductive thin film deposit manufacture and applied technical field.
Description of the drawings
Fig. 1 is the Structure explosion diagram of the present invention.
Fig. 2 is body structure schematic diagram in heating dish in Fig. 1.
Fig. 3 is disk body structural representation under heating dish in Fig. 1.
Shown in figure:
1st, disk body in heating dish;2nd, ceramics pole;3rd, disk body under heating dish;4th, heating dish pedestal;5、 Through hole;6th, media channel;7th, ceramic post holes;8th, medium import;9th, media outlet;10th, heat Galvanic couple hole;11st, the installation of TC screwed hole.
The present invention is further illustrated with reference to the accompanying drawings and examples.
Specific embodiment
Embodiment
As Figure 1-3, without air flue type temperature control disk, three parts are mainly included, i.e.,:Disk in heating dish Disk body 3 and heating dish pedestal 4 under body 1, heating dish.
In the heating dish, the lower surface of disk body 1 is provided with media channel hole 6 (layout of media channel such as figure Shown in 2);In the heating dish, the lower surface of disk body 1 is also provided with a thermocouple hole 10;The heating On disk, the lower surface of disk body 1 is formed with ceramic post holes 7, and ceramic post holes 7 is matched with ceramics pole 2.
Medium import 8 is provided with disk body 3 under the corresponding heating dish in two ends of media channel 6 and medium goes out Mouth 9;The installation of TC screwed hole is being provided with disk body 3 under heating dish corresponding with 10 position of thermocouple hole 11;Through hole 5 is provided with disk body 3 with 8 corresponding heating dish of ceramic post holes.
The inside of heating dish pedestal 4 is provided with corresponding media channel and thermocouple mounting hole.By ceramics pole 2, In ceramic post holes 7, the through hole 5 of disk body 3 under the correspondence heating dish of ceramics pole 2, then by heating dish Disk body 1 is welded with disk body under heating dish 3, and welding is welded with heating dish pedestal 4 after completing again, Complete the processing of whole temperature control disk.

Claims (4)

1. without air flue type temperature control disk, it is characterised in that:It mainly includes three parts, i.e.,:Heating dish Disk body and heating dish pedestal under upper disk body, heating dish, are carried out between each part by the way of welding Connection, carries out temperature control using medium heating dish, has different structures on each part, forms heating The media channel of disk, so control heating dish temperature, the heating dish using medium carry out cooling and The control of trip temperature is entered in heating, the circulation for utilizing the medium to heating dish, and media channel is distributed in heating dish It is internal.
2. as claimed in claim 1 without air flue type temperature control disk, it is characterised in that:Disk in the heating dish The lower surface of body is provided with media channel hole;In the heating dish, the lower surface of disk body is also provided with a thermocouple Hole;In the heating dish, the lower surface of disk body is formed with ceramic post holes, and ceramic post holes is matched with ceramics pole.
3. as claimed in claim 2 without air flue type temperature control disk, it is characterised in that:The media channel Medium import and media outlet are provided with disk body under the corresponding heating dish in two ends;With thermocouple hole position pair Answer;Disk body under heating dish corresponding with ceramic post holes On be provided with through hole.
4. as claimed in claim 1 without air flue type temperature control disk, it is characterised in that:The heating dish pedestal Inside is provided with corresponding media channel and thermocouple mounting hole, ceramics pole is arranged in ceramic post holes, pottery Under porcelain knob correspondence heating dish, then disk body in heating dish is welded by the through hole of disk body with disk body under heating dish Connect, welding is welded with heating dish pedestal after completing again, completes the processing of whole temperature control disk.
CN201510589568.6A 2015-09-16 2015-09-16 Without air flue type temperature control disk Pending CN106544648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510589568.6A CN106544648A (en) 2015-09-16 2015-09-16 Without air flue type temperature control disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510589568.6A CN106544648A (en) 2015-09-16 2015-09-16 Without air flue type temperature control disk

Publications (1)

Publication Number Publication Date
CN106544648A true CN106544648A (en) 2017-03-29

Family

ID=58361619

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510589568.6A Pending CN106544648A (en) 2015-09-16 2015-09-16 Without air flue type temperature control disk

Country Status (1)

Country Link
CN (1) CN106544648A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2615615Y (en) * 2003-05-10 2004-05-12 石家庄工大化工设备有限公司 Heating (cooling) dish
CN201436515U (en) * 2006-08-08 2010-04-07 应用材料股份有限公司 Base board support assembly
CN202905683U (en) * 2012-09-19 2013-04-24 中微半导体设备(上海)有限公司 Substrate bearing device capable of uniformly adjusting surface temperature
CN103374709A (en) * 2012-04-25 2013-10-30 绿种子材料科技股份有限公司 Chemical vapor deposition system
CN203839351U (en) * 2014-03-25 2014-09-17 上海微电子装备有限公司 Uniformly heating device having cooling function
CN104878370A (en) * 2015-05-29 2015-09-02 沈阳拓荆科技有限公司 Split type temperature-controllable heating disc structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2615615Y (en) * 2003-05-10 2004-05-12 石家庄工大化工设备有限公司 Heating (cooling) dish
CN201436515U (en) * 2006-08-08 2010-04-07 应用材料股份有限公司 Base board support assembly
CN103374709A (en) * 2012-04-25 2013-10-30 绿种子材料科技股份有限公司 Chemical vapor deposition system
CN202905683U (en) * 2012-09-19 2013-04-24 中微半导体设备(上海)有限公司 Substrate bearing device capable of uniformly adjusting surface temperature
CN203839351U (en) * 2014-03-25 2014-09-17 上海微电子装备有限公司 Uniformly heating device having cooling function
CN104878370A (en) * 2015-05-29 2015-09-02 沈阳拓荆科技有限公司 Split type temperature-controllable heating disc structure

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Application publication date: 20170329