CN104835761A - Temperature-controllable heating disc enabling peripheral outgassing - Google Patents
Temperature-controllable heating disc enabling peripheral outgassing Download PDFInfo
- Publication number
- CN104835761A CN104835761A CN201510206512.8A CN201510206512A CN104835761A CN 104835761 A CN104835761 A CN 104835761A CN 201510206512 A CN201510206512 A CN 201510206512A CN 104835761 A CN104835761 A CN 104835761A
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- China
- Prior art keywords
- heating plate
- temperature
- heating disc
- heat
- conduction medium
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a temperature-controllable heating disc enabling peripheral outgassing. The objective of the invention is mainly to solve problems of incapability of an existing heating disc and electrostatic chuck to fast and accurately control the temperature of wafers. According to the temperature-controllable heating disc of the invention, heating wires are distributed at the interior of a heating disc; a heat conduction medium storage and flowing space is arranged along the circumferential direction of the heating disc; the circumferential periphery of the heating disc is provided with gas outlets; the center of the heating disc is provided with a gas recovery hole; a heat conduction medium pipeline is adopted as the heat conduction medium storage and flowing space and can be realized through a pipeline casting, welding or pre-burying mode. The temperature-controllable heating disc of the invention is reasonable in structure; and a heat conduction medium can be directly, quickly and evenly distributed between the heating disc and the wafers, so that rapid and accurate control on the temperature of the wafers can be realized, and therefore, the finished product rate of the wafers and the production efficiency of semiconductor deposition equipment can be improved.
Description
Technical field
The present invention relates to a kind of air outlet structure being applied to the controllable temperature heating plate of semiconductor deposition equipment.By air outlet structure, heat-conducting medium is delivered between heating plate and wafer, to realize the accurate control to wafer temperature.Belong to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment often needs to make wafer and cavity space preheating or maintains required for deposition reaction temperature when deposition reaction, most of semiconductor deposition equipment all can use heating plate or electrostatic chuck to realize to the object of wafer preheating, but because mostly deposition reaction is to carry out under vacuum, vacuum environment is heat-conducting medium for want of, and heat-conductive characteristic is poor.Often cannot fast wafer be preheating to temperature required, or cannot uniformly by wafer preheating before deposition reaction.In the semiconductor coated film equipment participated in there being radio frequency, when the energy that radio frequency excites arrives crystal column surface, because the shortage of heat-conduction medium, the temperature of crystal column surface often can be made again to raise fast, make wafer surface temperature exceed deposition temperature required, and wafer is damaged.Along with the increase gradually of wafer size, the temperature homogeneity of wafer itself directly decides the good or bad of wafer quality, and the raising of temperature control to the raising of production efficiency and product yield is fast and accurately all vital.
The temperature that existing semiconductor deposition equipment heating plate and electrostatic chuck mostly only have heating plate self regulates and temperature controlling function, and the temperature for wafer cannot reach and accurately control.But deposition reaction be badly in need of most really to wafer temperature quick, accurately control.Only have and the temperature of wafer is maintained in the temperature range needed for deposition reaction fast and accurately, the lifting to product yield and efficiency could be realized.
Summary of the invention
The present invention is for the purpose of solving the problem, and mainly solves the problem that fast, accurately cannot control wafer temperature existing for existing heating plate and electrostatic chuck.The present invention forms certain air gap by inlet channel between heating plate surface and wafer, and pass into the good heat-conducting gas of thermal conduction effect wherein as heat transfer medium, temperature through heating plate is transmitted to wafer fast, or the temperature of wafer is conducted to rapidly on heating plate and derive.Designed by rational ventilation device, heat-conducting medium can be flowed rapidly and uniformly in space, realize the heat exchange of heating plate and wafer in time.
For achieving the above object, the present invention adopts following technical proposals: the controllable temperature heating plate given vent to anger in a kind of edge, comprise heating plate, be distributed with the heater strip realizing heating function in the inside of heating plate and a heat-conducting medium storage and the flowing space, i.e. heat-conduction medium pipeline are along the circumferential direction set.Described heating plate periphery is provided with the gas recovery holes that gas vent and heating plate center are provided with.Above-mentioned space can use casting, welding or the mode of pre-buried pipeline to realize.Heat-conducting medium delivers into heating plate inside from peripheral pipeline, heating plate internal circumference direction circulates, and enters chamber from the gas vent being positioned at heating plate periphery, arrives between heating plate and wafer.Heat-conducting medium can strengthen the heat transfer between wafer and heating plate, eliminates non-uniform temperature phenomenon, accurately to control wafer temperature.Gas vent is circumferentially uniformly distributed, and forms certain flow resistance, the gas pressure passed into is declined, can not directly go out heating plate surface separately from a certain outlet, but evenly give vent to anger from each gas vent of circumference after the flowing of heating plate inner homogeneous.Because heat-conducting medium lengthens with flow path in flow process, medium temperature changes, and heat transfer efficiency is reduced.The peripheral area of wafer is large, and middle area is less, the temperature non that edge air intake structure can improve heat transfer efficiency deficiency by the increase of rate-of flow and cause in gas flow.Finally the gas recovery holes at heating plate center, heat-conducting medium cooling device can be back to from heating plate inside from edge to center gas, and realize cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate, to realize circulating of heat-conducting medium again.Also the trench design of heating plate can be become open, make heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.
Beneficial effect of the present invention and feature:
By edge air outlet structure, between heating plate inside and wafer, form certain inter-air space, and in this inter-air space, pass into the higher heat-conducting medium of the coefficient of heat conduction, in order to strengthen the heat conduction efficiency under vacuum environment.By venthole diameter and the distribution of rational Design on Plane, make each venthole flow resistance even, thus heat-conducting medium evenly can be entered between heating plate and wafer from each gas vent, from edge to air feeding in center, heat-conducting medium flow is increased gradually from edge to during center convergence, thus the heat exchange efficiency that reduction brings because of the variations in temperature caused because of heat exchange in heat transfer medium flows process is not enough, make heat-conducting medium can directly, fast, be evenly distributed between heating plate and wafer, to realize the quick and precisely control to wafer temperature.The rate of finished products of further raising wafer and the production efficiency of semiconductor deposition equipment.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Shown in figure: 1, heater strip; 2, heat-conduction medium pipeline; 3, gas vent; 4, heating plate; 5, gas recovery holes.
Below in conjunction with drawings and Examples, invention is further described.
Embodiment
Embodiment
As shown in Figure 1, the controllable temperature heating plate given vent to anger in a kind of edge, comprises heating plate 4, is distributed with the heater strip 1 realizing heating function and along the circumferential direction arranges a heat-conducting medium to store and the flowing space, i.e. heat-conduction medium pipeline 2 in the inside of heating plate 4.Described heating plate 4 periphery is provided with gas vent 3, and the center of heating plate 4 is provided with gas recovery holes 5.Above-mentioned heat-conduction medium pipeline 2 can use casting, welding or pre-buried pipeline frame mode realize.It is inner that heat-conducting medium delivers into heating plate 4 from peripheral pipeline, heating plate 4 internal circumference direction circulates, and enters chamber from the gas vent 3 being positioned at heating plate 4 periphery, arrives between heating plate and wafer.Gas vent 3 is circumferentially uniformly distributed, and forms certain flow resistance, the gas pressure passed into is declined, can not directly go out heating plate surface separately from a certain outlet, but evenly give vent to anger from each venthole of circumference after the flowing of heating plate 4 inner homogeneous.Because heat-conducting medium lengthens with flow path in flow process, medium temperature changes, and heat transfer efficiency is reduced.The peripheral area of wafer is large, and middle area is less, and edge air intake structure can by the increase of rate-of flow in gas flow, reduces to improve the not enough and temperature non that causes of heat transfer efficiency.Finally the gas recovery holes 5 at heating plate 4 center, heat-conducting medium cooling device can be back to from heating plate inside from edge to center gas, and realize cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate 4 again, to realize circulating of heat-conducting medium.Also the trench design of heating plate 4 can be become open, make heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.
Claims (4)
1. an edge controllable temperature heating plate of giving vent to anger, comprises heating plate, it is characterized in that: described heating plate distributes heater strip and along the circumferential direction arrange a heat-conducting medium and store and the flowing space therein; Described heating plate periphery is provided with gas vent; The center of described heating plate is provided with gas recovery holes.
2. the edge as claimed in claim 1 controllable temperature heating plate of giving vent to anger, is characterized in that: described heat-conducting medium stores and the flowing space adopts heat-conduction medium pipeline.
3. the edge as claimed in claim 1 controllable temperature heating plate of giving vent to anger, is characterized in that: described gas vent distributes along heating plate even circumferential.
4. the edge as claimed in claim 2 controllable temperature heating plate of giving vent to anger, is characterized in that: described heat-conduction medium pipeline can use casting, weld or the frame mode of pre-buried pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510206512.8A CN104835761A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating disc enabling peripheral outgassing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510206512.8A CN104835761A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating disc enabling peripheral outgassing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104835761A true CN104835761A (en) | 2015-08-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510206512.8A Pending CN104835761A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating disc enabling peripheral outgassing |
Country Status (1)
| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017035929A1 (en) * | 2015-08-31 | 2017-03-09 | 沈阳拓荆科技有限公司 | Temperature control system having heat exchanger |
| CN111215295A (en) * | 2018-11-27 | 2020-06-02 | 沈阳芯源微电子设备股份有限公司 | Heating rotary platform device and using method thereof |
| CN112786482A (en) * | 2019-11-11 | 2021-05-11 | 夏泰鑫半导体(青岛)有限公司 | Heat treatment system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261721A1 (en) * | 2003-06-30 | 2004-12-30 | Steger Robert J. | Substrate support having dynamic temperature control |
| CN101207062A (en) * | 2006-12-15 | 2008-06-25 | 东京毅力科创株式会社 | Method for manufacturing substrate mounting table |
| CN101383314A (en) * | 2007-09-03 | 2009-03-11 | 东京毅力科创株式会社 | Substrate table substrate processing apparatus and temperature control method |
| US20110083837A1 (en) * | 2009-10-14 | 2011-04-14 | Tokyo Electron Limited | Temperature control system and temperature control method for substrate mounting table |
| JP2013120816A (en) * | 2011-12-07 | 2013-06-17 | Dainippon Screen Mfg Co Ltd | Heat treatment method and heat treatment device |
-
2015
- 2015-04-27 CN CN201510206512.8A patent/CN104835761A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261721A1 (en) * | 2003-06-30 | 2004-12-30 | Steger Robert J. | Substrate support having dynamic temperature control |
| CN101207062A (en) * | 2006-12-15 | 2008-06-25 | 东京毅力科创株式会社 | Method for manufacturing substrate mounting table |
| CN101383314A (en) * | 2007-09-03 | 2009-03-11 | 东京毅力科创株式会社 | Substrate table substrate processing apparatus and temperature control method |
| US20110083837A1 (en) * | 2009-10-14 | 2011-04-14 | Tokyo Electron Limited | Temperature control system and temperature control method for substrate mounting table |
| JP2013120816A (en) * | 2011-12-07 | 2013-06-17 | Dainippon Screen Mfg Co Ltd | Heat treatment method and heat treatment device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017035929A1 (en) * | 2015-08-31 | 2017-03-09 | 沈阳拓荆科技有限公司 | Temperature control system having heat exchanger |
| CN111215295A (en) * | 2018-11-27 | 2020-06-02 | 沈阳芯源微电子设备股份有限公司 | Heating rotary platform device and using method thereof |
| CN112786482A (en) * | 2019-11-11 | 2021-05-11 | 夏泰鑫半导体(青岛)有限公司 | Heat treatment system |
| CN112786482B (en) * | 2019-11-11 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | Heat treatment system |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150812 |