CN104835922B - The operating method of the two-way different in nature organic diode electrical storage functionalization based on photochromic compound - Google Patents
The operating method of the two-way different in nature organic diode electrical storage functionalization based on photochromic compound Download PDFInfo
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- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- Semiconductor Memories (AREA)
Abstract
The invention discloses the operating method of the organic diode electrical storage functionalization of the two-way opposite sex based on photochromic compound, belong to organic semiconductor field of electronic devices.The device is that photochromic compound can occur reversible ring-closure reaction under the illumination condition of different wave length, and change the physical property of compound, so as to change the storage characteristics of its device by a kind of photochromic compound evaporation on the hearth electrode of ITO.Under the light irradiation of the different wave length such as ultraviolet or visible ray, the storage properties of organic diode show as different storage classes, and its storage properties can be with reversible conversion.
Description
Technical field
Two-way different in nature organic diode electrical storage the present invention relates to be based on photochromic compound, belongs to organic and partly leads
Body field of electronic devices.
Background technology
In rear information age, magnanimity, ultrafast, mobile, cheap trend and challenge as Development of storage technology.Traditional deposits
Reservoir is realized based on inorganic semiconductor material, although with read or write speed is fast, long service life the features such as, but exist
The problems such as dimensional effect, preparation technology complexity and be more expensive to manufacture.Recent years, organic diode electrical storage prepares work because of it
Skill is simple, and preparation cost is low, can large area production, can be flexible, unique advantage such as high sensitivity.Above all organic material
Molecular dimension at 1-100 μm, therefore memory based on organic molecule is expected to obtain the memory cell of nano-scale, and raising is deposited
Storage density.Organic memory is as new types of data memory of future generation gradually into one of numerous study hotspots.
Organic diode electrical storage can be divided into non-volatile memories and the major class of volatile storage two by its electrology characteristic.
Main in organic non-volatile storage is repeatable erasable type (Rewritable) and write-once comprising flash memory (Flash)
(WORM) two classes are stored.Used as non-volatile memories, the store function that write-once repeatedly reads can ensure the number of its storage
According to will not lose or be changed because of various unexpected.Non-volatile memories then will not lose canned data and easy because of power-off
The data that the property lost storage has been stored after a loss of power will lose because of power-off.Dynamic RAM is included in volatile storage again
With the class of SRAM two.Dynamic RAM needs to use the discrete voltage of dynamic or the current impulse to carry out it
Periodic refresh maintains its storage state.And SRAM is then only needed to persistently power it and need not refreshed with regard to energy
Maintain its storage state, and static random storage has the response speed that is exceedingly fast but its cost is very high.Organic diode
Electrical storage can be divided into capacitor type, ferroelectric type, the class of resistor-type three by its functional layer material.
The report of many functional materials on organic diode memory, predominantly organic dielectric function are had at present
Material such as polystyrene (PS), polyvinylpyrrolidone (PVP), organic ferroelectric function material such as vinylidene-trifluoro second
Alkene copolymer (P (VDF-TrFE), polyvinylcarbazole material of an also quasi-resistance type functional material such as side chain containing fluorenes.But
In recent years, because photochromic material is in its photo-isomerisation process, refractive index, absorption spectrum, oxidation-reduction potential can
It is inverse to change, it is widely used in organic electronic device, such as photo-detector, photoinduction switch, photoelectric storage field.To the greatest extent
Pipe is applied to the report on organic diode memory on photochromic material as functional material, but report is fresh few, such as
T.Tsujioka in 2012 et al. is applied to photochromic material as functional material on organic memory, realizes light regulation and control
The electric current of organic memory.(T.Tsujioka,Org.Electron 2012,13,618).But on based on photochromic chemical combination
The two-way different in nature organic diode electrical storage report of thing does not find.
Although being related to the report being applied to photochromic material on organic diode electrical storage at present, it shows
Not the problems such as photochromic organic diode electrical storage having does not solve storage performance stabilization and storage multifunction.
In the present invention, we, as functional material, are applied on organic diode electrical storage from photochromic material.In ultraviolet light
Under the light irradiation of the different wave length such as visible ray, the storage properties of organic diode show as different storage classes, its storage
Property with reversible conversion, can realize the storage characteristics of the two-way opposite sex of organic diode electrical storage, while also achieving list
The storage multifunction of one device, widens the Control factors of organic field memory, and will open up it in organic semiconductor electronics device
More applications in part field, such as gate, light emitting diode, phototransistor etc..
The content of the invention
In order to realize regulation and control of the light to organic diode electrical storage storage properties, the present invention makees photochromic compound
It is accumulation layer, is applied to organic diode electrical storage.Under the light irradiation (ultraviolet light and visible ray) of different wave length, organic two
The storage properties of pole pipe show as different storage classes, and its storage properties can be with reversible conversion.Therefore finally realized
The storage characteristics purpose of the two-way opposite sex of machine diode electrical storage.The purpose of the present invention is realized by following scheme：
The invention provides the two-way different in nature organic diode electrical storage based on photochromic compound, including：Metal
Top electrode, organic semiconductor layer, tin indium oxide hearth electrode, it is characterised in that organic semiconductor layer uses a kind of photochromic
Compound, under the light irradiation of different wave length, the storage properties of organic diode show as different storage classes, its storage
Matter can be with reversible conversion.
The light of described different wave length is ultraviolet light and visible ray.
Described ultraviolet light, wavelength X<400nm, the intensity of light source is 1~10mW/cm2, and irradiation time is 1~30 minute.
Described visible light source, wavelength X>400nm, the intensity of light source is 2~20mW/cm2, and irradiation time is 1~25 point
Clock.
The photochromic compound is diarylethene, and its general molecular formula is as follows：
Wherein R bases are fragrant ring derivatives, including fluorenes class fragrance ring derivatives, the molecule of fluorenes class fragrance ring derivatives R bases
Structure is as follows：
The photochromic compound preferably 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene.
The preferred aluminium electrode of described metal electrode.
Described aluminium electrode is preferably strip electrode, and electrode width is 100~500 μm.
Described metallic top electrode is cross array structure.
It is photic based on what is prepared present invention also offers a kind of operating method of the functionalization of organic diode electrical storage
Electrochromic compound prepares organic diode electricity holder, it is characterised in that comprise the following steps：
Step 1：The cleaning process of indium-tin oxide electrode：Acetone wipes substrate；Acetone, ethanol and deionized water are used successively
It is cleaned by ultrasonic electrode 15 minutes；The liquid on electrode slice surface is blown away with nitrogen again, is dried up；
Step 2：Washed indium-tin oxide electrode is put into vacuum drying oven removed within 2 hours using 80 DEG C of bakings remain it is molten
Agent and moisture, move to treatment with irradiation 15 to 30 minutes in UV-ozone cleaning machine by substrate again afterwards；
Step 3：Under vacuum conditions, by photochromic compound evaporation to tin indium oxide, photochromic material is controlled
Evaporation rate, adjust to 1Hz/s, start evaporation, common 800Hz；
Step 4：Under vacuum conditions, on the film of photochromic material, continue to be deposited with upper aluminium wire, control the evaporation of aluminium
Rate adaptation starts evaporation, evaporation to 3000Hz to 2-3Hz/s.
Step 5：Two-way different in nature organic diode electrical storage based on photochromic compound of the present invention, not
Under the light irradiation (ultraviolet light and visible ray) of co-wavelength, the storage properties of organic diode show as different storage classes, often
Planting electric storage class can all realize different conductive states, different storage classes or storage by electronically written and/or electrically erasable
Behavior can realize reversible conversion by the illumination of different wave length.
Two-way different in nature organic diode electrical storage based on photochromic compound by functionalization operation, its storage
Matter with reversible conversion, can realize the storage characteristics of the two-way opposite sex of organic diode electrical storage, while also achieving single
The storage multifunction of device.
Beneficial effect
Photochromic compound prepared by the present invention, can produce response to light.The photochromic compound is applied to
Organic diode electrical storage.The two-way different in nature organic diode electrical storage based on photochromic compound, using peace
Prompt human relations B1500 semiconductor analysis instruments are tested, photochromic under the light irradiation (ultraviolet light and visible ray) of different wave length
Compound is in different states (closed loop and open loop), and the storage properties of organic diode show as different storage classes, its
Storage properties with reversible conversion, can realize the storage characteristics of the two-way opposite sex of organic diode electrical storage.
In general, the response characteristics to light based on photochromic compound, it can occur physical in the presence of light
The change of matter, organic diode electrical storage is applied to using photochromic compound as functional layer, and light can be realized to organic
The regulation and control of diode electrical storage storage properties.
Brief description of the drawings
Fig. 1：It is the chemical formula of photochromic material in embodiment.
Fig. 2：It is the organic diode electrical storage structural representation based on 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene
Figure.
Fig. 3：It is the voltage-to-current (I-V) of organic diode electrical storage under open loop situations (aluminium electrode width is 500 μm)
Curvilinear characteristic.
Fig. 4：It is the electricity that organic diode electrical storage (aluminium electrode width is 500 μm) after 2min is powered off under open loop situations
Piezo-electric stream (I-V) curvilinear characteristic.
Fig. 5：It is the voltage-to-current (I-V) of organic diode electrical storage under closed loop states (aluminium electrode width is 500 μm)
Curvilinear characteristic.
Fig. 6：It is the voltage-to-current (I-V) of organic diode electrical storage under open loop situations (aluminium electrode width is 250 μm)
Curvilinear characteristic.
Fig. 7：It is the voltage-to-current (I-V) of organic diode electrical storage under closed loop states (aluminium electrode width is 250 μm)
Curvilinear characteristic.
Specific embodiment
Below by specific embodiment, organic two pole is applied to using photochromic material as functional material to the present invention
Pipe electrical storage preparation method is described in detail.
It is prior art to prepare photochromic material, and the present invention needs self-control photochromic material as functional material, with
As a example by 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene (o-BMThCE).
The preparation of 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene (o-BMThCE)
Prepare reaction equation as follows：
Preparation process：Be prepared in advance the twoport flask of the 100ml dried.Weigh (the chloro- 2- first of 5- of 0.56g 1,5- bis-
Base thiophene -3) cyclopentene (1.7mmol), twoport flask is connected with reflux condensing tube, vaseline is coated in interface, wrap tin
Paper.Vacuumize.Extract tetrahydrofuran 24ml and squeeze into flask, add n-BuLi 0.27g/2.6ml (4.26mmol), be stirred at room temperature
Reaction 30min or so；Extract B (OBu) 31.4ml (5.1mmol) and add reaction bulb, reaction is stirred at room temperature overnight, reaction solution is in brown
Yellow.
2- bromine fluorenes 2.0g (8.16mmol) is added in the twoport flask of 100ml, tinning paper lucifuge is vacuumized, add Pd
(PPh3) 40.1g (0.086mmol), vacuum nitrogen gas extract the reaction solution addition reaction bulb that top obtains, oil bath pan for three times
It is heated to 90 DEG C, stirring reaction 15min or so；Extract Na2CO3 (2M) 8.6ml and a little ethylene glycol adds reaction bulb.Backflow is anti-
Should overnight.Post processing：Reaction solution is poured into substantial amounts of water, is extracted with ether, merge organic phase, dried, suction filtration, vacuum distillation.
Post separation is crossed by recrystallization and silica gel column chromatography and obtains photochromic molecules 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene
(o-BMThCE).1H NMR (400MHz, CDCl3) δ 7.77 (d, J=7.5Hz, 2H), 7.74 (d, J=8.0Hz, 2H), 7.70
(s, 2H), 7.57-7.54 (m, 2H), 7.53 (s, 2H), 7.38 (t, J=7.2Hz, 2H), 7.32-7.28 (m, 2H), 7.12 (s,
2H), (s, the 6H) of 3.91 (s, 4H), 2.89 (t, J=7.4Hz, 4H), 2.12 (dd, J=14.8,7.3Hz, 2H), 2.03
The photochromic material of embodiment 1 is obtained by above-mentioned steps, its structure is as shown in Figure 1.
Embodiment 1：Organic diode electricity based on 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene (o-BMThCE) is deposited
It is prepared by reservoir (aluminium electrode width is 500 μm).
Step 1：The cleaning of tin indium oxide (ITO) electrode, first wipes electrode with acetone；Using acetone, ethanol and go successively
Ionized water is cleaned by ultrasonic substrate, then dries up electrode with nitrogen；
Step 2：Washed tin indium oxide (ITO) electrode is put into vacuum drying oven and is removed within 2 hours using 80 DEG C of bakings
Residual solvent and moisture, move to treatment with irradiation 15-30min in UV-ozone cleaning machine by substrate again afterwards；
Step 3：Vacuum evaporation photochromic material (BMThCE), by photochromic compound (BMThCE) evaporation to oxidation
On indium tin (ITO), the evaporation rate of control photochromic material (BMThCE) is adjusted to 1Hz/s, starts evaporation, common 800Hz.
Step 4：Plus the mask plate that strip-shaped channel width is 500 μm, vacuum evaporation aluminium electrode, the evaporation environment of aluminium electrode
As photochromic material, the evaporation rate of control photochromic material (BMThCE) is adjusted to 2-3Hz/s, evaporation is arrived
3000Hz。
The organic diode electrical storage of embodiment 1 is obtained by aforementioned four step, its structure is as shown in Figure 2.
Organic diode electrical storage in embodiment 1 is in open loop state (initial device radiation of visible light 10min, λ>
490nm, I0=5.86mW/cm2) when, device is presented the characteristic of one-way conduction, starts device and low conductive state (amount of current is presented
Level：10-8A), negative voltage (0 arrives -6V) is applied, in -2V current breaks to conductive state high (amount of current level：10-2A), hereafter
Device is always held at high connductivity state, and current on/off ratio is up to 105, and scanning voltage scope is -6V~+6V.Therefore, device during ON state
Part storage class is write-once (WORM), as shown in Figure 3.In power-off after 2min, device still maintains high connductivity state,
Illustrate that its is non-volatile, as shown in Figure 4.In closed loop state (device ultraviolet light 10min, λ=200-400nm, I0=
When 5.86mW/cm2), device is presented and repeats erasable characteristic, starts device and low conductive state (amount of current level is presented：10-4A),
Apply negative voltage (0 arrives -6V), in -1V current breaks to conductive state high (amount of current level：10-2A), hereafter device is protected always
Hold in high connductivity state, apply forward voltage (0 arrives 6V), in 4V, electric current is wiped by high connductivity state and is back to low conductive state (amount of current
Level：10-4A), current on/off ratio is up to 102, and scanning voltage scope is -6V~+6V.Therefore, device storage class is during OFF state
Erasable (Flash) type is repeated, as shown in Figure 5.
Embodiment 2：Organic diode electricity based on 1,2- bis- (5- fluorenes -2- methylthiophenes -3) cyclopentene (o-BMThCE) is deposited
It is prepared by reservoir (aluminium electrode width is 250 μm).
Step 1：The cleaning of tin indium oxide (ITO) electrode, first wipes electrode with acetone；Using acetone, ethanol and go successively
Ionized water is cleaned by ultrasonic substrate, then dries up electrode with nitrogen；
Step 2：Washed tin indium oxide (ITO) electrode is put into vacuum drying oven and is removed within 2 hours using 80 DEG C of bakings
Residual solvent and moisture, move to treatment with irradiation 15-30min in UV-ozone cleaning machine by substrate again afterwards；
Step 3：Vacuum evaporation photochromic material (BMThCE), by photochromic compound (BMThCE) evaporation to oxidation
On indium tin (ITO), the evaporation rate of control photochromic material (BMThCE) is adjusted to 1Hz/s, starts evaporation, common 800Hz.
Step 4：Plus the mask plate that strip-shaped channel width is 250 μm, vacuum evaporation aluminium electrode, the evaporation environment of aluminium electrode
As photochromic material, the evaporation rate of control photochromic material (BMThCE) is adjusted to 2-3Hz/s, evaporation is arrived
3000Hz。
The organic diode electrical storage of embodiment 2 is obtained by aforementioned four step, its structure is as shown in Figure 2.
Organic diode electrical storage in embodiment 2 is in open loop state (initial device radiation of visible light 10min, λ>
490nm, I0=5.86mW/cm2) when, device is presented and repeats erasable characteristic, starts device and low conductive state (amount of current level is presented：
10-8A), negative voltage (0 arrives -6V) is applied, in -3.1V current breaks to conductive state high (amount of current level：10-2A), hereafter
Device is always held at high connductivity state, and current on/off ratio is up to 106, and scanning voltage scope is -6V~+10V.Therefore, during ON state
Device storage class is to repeat erasable (Flash) type, as shown in Figure 6.In closed loop state (device ultraviolet light 10min, λ
=200-400nm, I0=5.86mW/cm2) when, device is presented the characteristic of one-way conduction, starts device and low conductive state (electricity is presented
Fluxion magnitude：10-8A), negative voltage (0 arrives -6V) is applied, in -2.3V current breaks to conductive state high (amount of current level：10-
3A), hereafter device is always held at high connductivity state, and current on/off ratio is up to 105, and scanning voltage scope is -6V~+8V.Therefore,
Device storage class is write-once (WORM) type during OFF state, as shown in Figure 7.
It is enlightenment with above-mentioned desirable embodiment of the invention, by above-mentioned description, relevant staff completely may be used
Without departing from the scope of the technological thought of the present invention', to carry out various changes and amendments.The technical model of this invention
Enclose the content being not limited on specification, it is necessary to its technical scope is determined according to right.
Claims (3)
1. a kind of operating method of the two-way different in nature organic diode electrical storage functionalization based on photochromic compound, wraps
Include：The preparation of organic diode electrical storage, step is as follows：Step 1：The cleaning process of indium-tin oxide electrode：Acetone wipes base
Piece；It is cleaned by ultrasonic electrode 15 minutes using acetone, ethanol and deionized water successively；The liquid on electrode slice surface is blown away with nitrogen again
Body, drying；Step 2：Washed indium-tin oxide electrode is put into vacuum drying oven removed within 2 hours using 80 DEG C of bakings remain it is molten
Agent and moisture, move to treatment with irradiation 15 to 30 minutes in UV-ozone cleaning machine by substrate again afterwards；Step 3：In vacuum environment
Under, by photochromic compound evaporation to tin indium oxide, the evaporation rate of photochromic material is controlled, adjust to 1Hz/s, open
Begin evaporation, common 800Hz；Step 4：Under vacuum conditions, on the film of photochromic material, continue to be deposited with upper aluminium wire, control
The evaporation rate of aluminium is adjusted to 2-3Hz/s, starts evaporation, evaporation to 3000Hz；Step 5：Under the light irradiation of different wave length, have
The storage properties of machine diode show as different electric storage classes, and every kind of electric storage class all can be by electronically written and/or electricity
Wipe to realize different conductive states, different storage classes or storage behavior can be realized reversible by the illumination of different wave length
Conversion.
2. a kind of two-way different in nature organic diode electrical storage work(based on photochromic compound according to claim 1
The operating method of energyization, it is characterised in that：The light of described different wave length is ultraviolet light, wavelength X<400nm, the intensity of light source is 1
~10mW/cm2, irradiation time is 1~30 minute.
3. a kind of two-way different in nature organic diode electrical storage work(based on photochromic compound according to claim 1
The operating method of energyization, it is characterised in that：The light of described different wave length is visible light source, wavelength X>400nm, the intensity of light source
It is 2~20mW/cm2, irradiation time is 1~25 minute.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103346A (en) * | 1977-02-16 | 1978-07-25 | International Business Machines Corporation | Non-destructive readout scheme for holographic storage system |
| EP1528573A1 (en) * | 2003-10-31 | 2005-05-04 | The National University Corporation Osaka Kyoiku University | Photochromic nonvolatile memory and partial erasing method |
| CN101280054A (en) * | 2008-04-29 | 2008-10-08 | 南京邮电大学 | Conjugated polymer containing iridium complex and preparation of electrical storage device thereof |
| CN101339974A (en) * | 2008-08-12 | 2009-01-07 | 苏州大学 | Organic polymer electronic memory and manufacturing method therefor |
| CN103003885A (en) * | 2010-05-11 | 2013-03-27 | 耶达研究及发展有限公司 | Solid, multi-state molecular random access memory (RAM) |
| CN103554351A (en) * | 2013-10-25 | 2014-02-05 | 苏州大学 | Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103346A (en) * | 1977-02-16 | 1978-07-25 | International Business Machines Corporation | Non-destructive readout scheme for holographic storage system |
| EP1528573A1 (en) * | 2003-10-31 | 2005-05-04 | The National University Corporation Osaka Kyoiku University | Photochromic nonvolatile memory and partial erasing method |
| CN101280054A (en) * | 2008-04-29 | 2008-10-08 | 南京邮电大学 | Conjugated polymer containing iridium complex and preparation of electrical storage device thereof |
| CN101339974A (en) * | 2008-08-12 | 2009-01-07 | 苏州大学 | Organic polymer electronic memory and manufacturing method therefor |
| CN103003885A (en) * | 2010-05-11 | 2013-03-27 | 耶达研究及发展有限公司 | Solid, multi-state molecular random access memory (RAM) |
| CN103554351A (en) * | 2013-10-25 | 2014-02-05 | 苏州大学 | Novel copolymer based on naphthalene nucleus, preparation method thereof and ternary electric storage device prepared therefrom |
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