CN104810470A - Surface acoustic wave device and preparation method thereof - Google Patents
Surface acoustic wave device and preparation method thereof Download PDFInfo
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- CN104810470A CN104810470A CN201410036354.1A CN201410036354A CN104810470A CN 104810470 A CN104810470 A CN 104810470A CN 201410036354 A CN201410036354 A CN 201410036354A CN 104810470 A CN104810470 A CN 104810470A
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- surface acoustic
- acoustic wave
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Abstract
The invention provides a surface acoustic wave device comprising a piezoelectric substrate, a surface acoustic wave generator, and a surface acoustic wave receiver. The surface acoustic wave generator and the surface acoustic wave receiver are oppositely arranged on the piezoelectric substrate. The surface acoustic wave generator is used for generating surface acoustic waves, and the surface acoustic wave receiver is used for receiving the surface acoustic waves generated by the surface acoustic wave generator. The surface acoustic wave generator and the surface acoustic wave receiver are made of graphene. The following advantages are achieved: graphene can adapt to high-frequency and high-power surface acoustic wave devices on the premise of not changing the current working mode of surface acoustic wave devices, and has higher power tolerance and mechanical strength; the influence on acoustic impedance is reduced, higher sensitivity is achieved, and the requirement of high-frequency filtering is met; the cooling performance of the surface acoustic wave device is enhanced, the service life of the surface acoustic wave device is prolonged, and the operation stability of the device is improved; and the surface acoustic wave device is easier to etch and process.
Description
Technical field
The present invention relates to SAW (Surface Acoustic Wave) device technical field, particularly relate to high-frequency high-power SAW (Surface Acoustic Wave) device its preparation method.
Background technology
SAW (Surface Acoustic Wave) device is a kind of passive device signal to selection index system, because it has the advantages such as volume is little, quality is light, highly sensitive, filtering performance is superior, consistency is good, is widely used in the field such as communication, sensing.
In SAW (Surface Acoustic Wave) device manufacturing process, the conversion of the signal of telecommunication and acoustical signal has been come by the interdigital electrode on piezoelectric substrate surface.The interdigital electrode of existing SAW (Surface Acoustic Wave) device is metal electrode, mainly there is following several respects problem in it: first, the interdigital electrode finger width of traditional metal is generally micron or nanometer scale, when SAW (Surface Acoustic Wave) device works, under high-power state, repeated stress from surface acoustic wave can cause metallic atom along crystal boundary migration, in the past at metal film surfaces generation hole or protuberance, thus causes short circuit or the open circuit of electrode.The second, for high-frequency sound surface wave device, frequency more high request metal electrode film thickness is less, causes the adhesive force of metallic film and piezoelectric substrate to reduce, thus has a strong impact on device performance; 3rd, under high power conditions, substrate surface is in the condition of high temperature to SAW (Surface Acoustic Wave) device usually, if heat radiation deficiency is easy to cause component failure; 4th, in order to improve the performance of metal interdigital electrode, usually by a small amount of refractory metal, as Cu, W etc. add in metallic film, but the alloy firm stable performance formed, be difficult to etching and carry out micro Process process.In addition, in order to obtain high-frequency sound surface wave device, require that the width of metal interdigital electrode and interval of grid strip are sufficiently little, this increases micro-machined technology difficulty equally.
The very thin stratified material that Graphene is made up of carbon atom, the thinnest to monoatomic layer, the method such as chemical meteorology deposition, mechanical cleavage can be utilized to obtain.Its good conductivity, its electron mobility experimental measurements is more than 15000 cm2/vs.In addition, Graphene has good mechanical property, is the material that current mankind's known strength is the highest, also harder than diamond, taller upper 100 times of the iron and steel that strength ratio is best in the world.And its material is extremely light, thermodynamics and stable chemical nature, using plasma body lithography becomes arbitrary shape.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of SAW (Surface Acoustic Wave) device and preparation method thereof, and it can improve the stability of the sensitivity of existing SAW (Surface Acoustic Wave) device and dynamic range, enhancing SAW (Surface Acoustic Wave) device under high-frequency high-power condition.
In order to solve the problem, the invention provides a kind of SAW (Surface Acoustic Wave) device, comprise piezoelectric substrate, surface acoustic wave generator and surface acoustic wave receiver, described surface acoustic wave generator and described sound surface receiver are oppositely arranged in piezoelectric substrate, described surface acoustic wave generator is for generation of surface acoustic wave, the surface acoustic wave that described surface acoustic wave receiver produces for receiving surface acoustic wave generator, the material of described surface acoustic wave generator and surface acoustic wave receiver is Graphene.
A preparation method for SAW (Surface Acoustic Wave) device, comprises the steps: to provide a piezoelectric substrate; Graphene film is covered the surface of piezoelectric substrate; Etching graphene film, forms surface acoustic wave generator and surface acoustic wave receiver, and described surface acoustic wave generator is for generation of surface acoustic wave, and described surface acoustic wave receiver is for receiving the surface acoustic wave of surface acoustic wave generator generation.
Further, the manufacture method of described graphene film comprises the steps: deposited graphite alkene film in the growth substrates of Graphene; Remove growth substrates, obtain graphene film; Graphene film is covered in piezoelectric substrate.
Further, the method removing described growth substrates comprises the steps: the growth substrates with graphene film to be placed in etchant solution, and described etchant solution can corrode described growth substrates, obtains the graphene film be suspended in etchant solution.
Further, comprise the steps: to use piezoelectric substrate to be picked up by the graphene film be suspended in etchant solution, form the piezoelectric substrate that surface coverage has graphene film.
Further, the method for described etching graphene film is the method that electron beam combines with anisotropy.
Further, the method for described etching graphene film is photoengraving.
SAW (Surface Acoustic Wave) device of the present invention and preparation method thereof has the following advantages: under the prerequisite not changing existing SAW (Surface Acoustic Wave) device mode of operation, surface acoustic wave generator and surface acoustic wave receiver can adapt to high frequency, high-power SAW (Surface Acoustic Wave) device, have stronger power holding capacity and mechanical resistance properties; Surface acoustic wave generator and surface acoustic wave receiver can reduce the impact on sound impedance, obtain higher sensitivity, can adapt to the demand of High frequency filter; Strengthen the heat dispersion of SAW (Surface Acoustic Wave) device, extend the useful life of SAW (Surface Acoustic Wave) device, improve the job stability of device; SAW (Surface Acoustic Wave) device more easily carries out etching and processing.
Accompanying drawing explanation
Figure 1 shows that the structural representation of SAW (Surface Acoustic Wave) device of the present invention;
Figure 2 shows that the step schematic diagram of the preparation method of sound surface device of the present invention.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to SAW (Surface Acoustic Wave) device provided by the invention and preparation method thereof.
Figure 1 shows that the structural representation of SAW (Surface Acoustic Wave) device of the present invention.See Fig. 1, SAW (Surface Acoustic Wave) device comprises piezoelectric substrate 1, surface acoustic wave generator 2 and surface acoustic wave receiver 3.Described piezoelectric substrate 1 is selected from one or more in lithium niobate, quartz crystal, III-V, II-VI group compound and other piezoelectrics.Described surface acoustic wave generator 2 is oppositely arranged in piezoelectric substrate 1 with described sound surface receiver 3, described surface acoustic wave generator 2 is for generation of surface acoustic wave, the surface acoustic wave that described surface acoustic wave receiver 3 produces for receiving surface acoustic wave generator 2, the material of described surface acoustic wave generator 2 and surface acoustic wave receiver 3 is Graphene.In this embodiment, described surface acoustic wave generator 2 and surface acoustic wave receiver 3 are interdigital electrode.
The present invention uses Graphene as the material of surface acoustic wave generator 2 and surface acoustic wave receiver 3, have the following advantages: first, Graphene has the mechanical strength of superelevation, and the repeated stress produced for surface acoustic wave has stronger power holding capacity and mechanical resistance properties; Second, due to interdigital electrode quality load caused by surface acoustic wave impedance variation be directly proportional to the thickness of interdigital electrode, Graphene used is only single or several carbon atom thickness, be compared to metal interdigital electrode, quality reduces greatly, therefore can greatly reduce the impact of quality loading on impedance, and the interdigital electrode can ignored caused by quality loading is to the reflection of surface acoustic wave; 3rd, under high power conditions, piezoelectric substrate surface is in the condition of high temperature usually, SAW (Surface Acoustic Wave) device is easily made to lose efficacy, and graphite has good heat conductivility, can distribute in time by the heat that produces when running of device, thus ensure that the job stability of device, make surface acoustic wave generator 2 of the present invention can bear the high power of 10W; 4th, Graphene easily etches, and can process the bar grid obtaining nanoscale width, can adapt to the demand of high-frequency sound surface wave device, described high-frequency range is GHz scope.SAW (Surface Acoustic Wave) device provided by the invention for improving the sensitivity of existing SAW (Surface Acoustic Wave) device and dynamic range, the aspect such as stability of enhancing SAW (Surface Acoustic Wave) device has important function.
The present invention also provides a kind of preparation method of sound surface device, Figure 2 shows that the step schematic diagram of the preparation method of sound surface device of the present invention.See Fig. 2, the preparation method of described sound surface device comprises the steps: step S20, provides a piezoelectric substrate; Step S21, graphene film is covered the surface of piezoelectric substrate; Step S22, etching graphene film, form surface acoustic wave generator and surface acoustic wave receiver, and described surface acoustic wave generator is for generation of surface acoustic wave, and described surface acoustic wave receiver is for receiving the surface acoustic wave of surface acoustic wave generator generation.
See step S20, provide a piezoelectric substrate.Described piezoelectric substrate 1 is selected from one or more in lithium niobate, quartz crystal, III-V, II-VI group compound and other piezoelectrics.
Step S21, graphene film is covered the surface of piezoelectric substrate.The manufacture method of described graphene film comprises the steps:
(1) deposited graphite alkene film in the growth substrates of Graphene.The method of described deposited graphite alkene film comprises chemical gaseous phase depositing process.(2) remove growth substrates, obtain graphene film.The method removing described growth substrates comprises the steps: the growth substrates with graphene film to be placed in etchant solution, and described etchant solution can corrode described growth substrates, obtains the graphene film be suspended in etchant solution.
Further, if the graphene film obtained is suspended in etchant solution, then uses piezoelectric substrate to be picked up by the graphene film be suspended in etchant solution, form the piezoelectric substrate that surface coverage has graphene film.
Step S22, etching graphene film, form surface acoustic wave generator and surface acoustic wave receiver, and described surface acoustic wave generator is for generation of surface acoustic wave, and described surface acoustic wave receiver is for receiving the surface acoustic wave of surface acoustic wave generator generation.In this embodiment, described surface acoustic wave generator 2 and surface acoustic wave receiver 3 are interdigital electrode.The method that method comprises photoengraving, electron beam combines with anisotropy of described etching graphene film.Described lithographic method is prior art, is not repeated herein.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. a SAW (Surface Acoustic Wave) device, comprise piezoelectric substrate, surface acoustic wave generator and surface acoustic wave receiver, described surface acoustic wave generator and described sound surface receiver are oppositely arranged in piezoelectric substrate, described surface acoustic wave generator is for generation of surface acoustic wave, the surface acoustic wave that described surface acoustic wave receiver produces for receiving surface acoustic wave generator, it is characterized in that, the material of described surface acoustic wave generator and surface acoustic wave receiver is Graphene.
2. a preparation method for SAW (Surface Acoustic Wave) device, is characterized in that, comprising the steps: provides a piezoelectric substrate; Graphene film is covered the surface of piezoelectric substrate; Etching graphene film, forms surface acoustic wave generator and surface acoustic wave receiver, and described surface acoustic wave generator is for generation of surface acoustic wave, and described surface acoustic wave receiver is for receiving the surface acoustic wave of surface acoustic wave generator generation.
3. the preparation method of SAW (Surface Acoustic Wave) device according to claim 2, is characterized in that, the manufacture method of described graphene film comprises the steps: deposited graphite alkene film in the growth substrates of Graphene; Remove growth substrates, obtain graphene film.
4. the preparation method of SAW (Surface Acoustic Wave) device according to claim 3, it is characterized in that, the method removing described growth substrates comprises the steps: the growth substrates with graphene film to be placed in etchant solution, described etchant solution can corrode described growth substrates, obtains the graphene film be suspended in etchant solution.
5. the preparation method of SAW (Surface Acoustic Wave) device according to claim 3, is characterized in that, comprises the steps: further to use piezoelectric substrate to be picked up by the graphene film be suspended in etchant solution, forms the piezoelectric substrate that surface coverage has graphene film.
6. the preparation method of SAW (Surface Acoustic Wave) device according to claim 2, is characterized in that, the method for described etching graphene film is the method that electron beam combines with anisotropy.
7. the preparation method of SAW (Surface Acoustic Wave) device according to claim 2, is characterized in that, the method for described etching graphene film is photoengraving.
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| WO2019057161A1 (en) * | 2017-09-22 | 2019-03-28 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
| CN111669146A (en) * | 2020-05-06 | 2020-09-15 | 河源市众拓光电科技有限公司 | Back silicon etching type shear wave filter and preparation method thereof |
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| CN103346694A (en) * | 2013-06-09 | 2013-10-09 | 上海交通大学 | Piezoelectric micro energy collector based on annular interdigital electrode and preparation method thereof |
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| CN103415994A (en) * | 2011-03-08 | 2013-11-27 | 诺基亚公司 | An apparatus for transducing a surface acoustic wave |
| US20130127299A1 (en) * | 2011-11-22 | 2013-05-23 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric device of polymer |
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| CN111669146A (en) * | 2020-05-06 | 2020-09-15 | 河源市众拓光电科技有限公司 | Back silicon etching type shear wave filter and preparation method thereof |
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Inventor after: Zhong Haijian Inventor after: Fan Yingmin Inventor after: Liu Zhenghui Inventor after: Xu Gengzhao Inventor after: Huang Zengli Inventor after: Xu Ke Inventor before: Zhong Haijian Inventor before: Fan Yingmin Inventor before: Liu Zhenghui Inventor before: Xu Gengzhao Inventor before: Huang Zengli Inventor before: Xu Ke |
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Application publication date: 20150729 |
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