CN104810457A - 一种基于镀钯铜线的led封装工艺 - Google Patents

一种基于镀钯铜线的led封装工艺 Download PDF

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CN104810457A
CN104810457A CN201510147637.8A CN201510147637A CN104810457A CN 104810457 A CN104810457 A CN 104810457A CN 201510147637 A CN201510147637 A CN 201510147637A CN 104810457 A CN104810457 A CN 104810457A
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led
bonding
wire
copper cash
crystal
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徐龙飞
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Changzhi Hongyuan Photoelectric Technology Co Ltd
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Abstract

本发明属于LED封装领域，特别是公开一种基于镀钯铜线的LED封装工艺；该封装工艺制作的LED晶片反光性能好，不吸光而且相对于传统的金线价格便宜；1）原物料准备；2）固晶生产；3）固晶胶烘烤；4）焊线：用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 40-70mw，焊接压力70-120gms，焊接时间10-20ms，键合区温度160-180℃；5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；6）烘烤。

Description

一种基于镀钯铜线的LED封装工艺
技术领域
本发明属于LED封装领域，特别是涉及一种基于镀钯铜线的LED封装工艺。
背景技术
目前LED 封装焊线是利用超声波(60-120KHz)发生器使劈刀发生水平弹性振动，同时施加向下的压力。使得劈刀在这两种力作用下带动引线在焊区金属表面迅速摩擦，进而磨蚀掉表面氧化层，引线受能量作用发生塑性变形，在25ms内与键合区紧密接触成焊接。此外，还要外加热源，目的是激活材料的能级，促进两种金属的有效连接以及金属间化合物(IMC)的扩散和生长。
现有的LED封装工艺中，通常采用银线或金线作为焊线，由于银的导热率较高，容易形成长的热影响区，热影响区由于晶粒粗大，机械性能下降，拉力测试时候容易造成B点断裂。所有金属中银的导电性最好，金的导电率为银的76.7%，但银的化学稳定性不如金，易氧化、硫化，故工艺制程中要注意环境与操作时间控制。
发明内容
本发明克服现有技术存在的不足，解决了现有技术存在的问题，提供一种基于镀钯铜线的LED封装工艺流，该封装工艺制作的LED晶片反光性能好，不吸光而且相对于传统的金线价格便宜。
为了解决上述技术问题，本发明采用的技术方案为：一种基于镀钯铜线的LED封装工艺，按照以下步骤进行：
1）原物料准备：采用超声波清洗LED支架，并烘干，然后将固晶胶水解冻；
2）固晶生产：将LED晶片放置于涂有固晶胶的LED支架上；
3）固晶胶烘烤：将LED支架送入烘烤站中进行固晶胶烘烤，使LED晶片固定于LED支架上，固晶胶烘烤完成后进行推力测试；
4）焊线：用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 40-70mw，焊接压力70-120gms，焊接时间10-20ms，键合区温度160-180℃，焊线后进行拉力测试；
5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；
6）烘烤：让胶水冲锋固化，同时对LED晶片进行热老化。
优选的是，焊线时进行氮气保护。
本发明与现有技术相比具有以下有益效果：本发明采用的LED封装工艺利用镀钯铜线代替原有的金线，镀钯铜线价格便宜，是同等线径的金丝的10%左右，成本下降90%左右，而且通过采用合适的焊接参数制作完成后的LED晶片，反光性好，不吸光，亮度与使用金线相比可提高10%左右。
附图说明
下面结合附图对本发明做进一步详细的说明。
图1为拉力测试的示意图。
具体实施方式
实施例一
如图1所示，一种基于镀钯铜线的LED封装工艺，按照以下步骤进行：
1）原物料准备：采用超声波清洗LED支架，并烘干，然后将固晶胶水解冻；
2）固晶生产：将LED晶片放置于涂有固晶胶的LED支架上；
3）固晶胶烘烤：将LED支架送入烘烤站中进行固晶胶烘烤，使LED晶片固定于LED支架上，固晶胶烘烤完成后进行推力测试；
4）焊线：在氮气保护范围中用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 40-50mw，焊接压力70-90gms，焊接时间10ms，键合区温度160-165℃，焊线后进行拉力测试；
选用的镀钯铜线进行拉力测试要求断B或C点≥8g；
5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；
6）烘烤：让胶水冲锋固化，同时对LED晶片进行热老化。
由于铜的化学稳定性不如银，易氧化、易硫化，故选用表面镀钯铜线焊线时进行氮气保护，这样就能够有效防止镀钯铜线中的铜氧化、硫化，影响镀钯铜线的导电线和LED晶片的亮度。
实例二
一种基于镀钯铜线的LED封装工艺，按照以下步骤进行：
1）原物料准备：采用超声波清洗LED支架，并烘干，然后将固晶胶水解冻；
2）固晶生产：将LED晶片放置于涂有固晶胶的LED支架上；
3）固晶胶烘烤：将LED支架送入烘烤站中进行固晶胶烘烤，使LED晶片固定于LED支架上，固晶胶烘烤完成后进行推力测试；
4）焊线：用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 50-60mw，焊接压力90-100gms，焊接时间15ms，键合区温度165-170℃，焊线后进行拉力测试；
选用的镀钯铜线进行拉力测试要求断B或C点≥8g；
5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；
6）烘烤：让胶水冲锋固化，同时对LED晶片进行热老化。
实施例三
一种基于镀钯铜线的LED封装工艺，按照以下步骤进行：
1）原物料准备：采用超声波清洗LED支架，并烘干，然后将固晶胶水解冻；
2）固晶生产：将LED晶片放置于涂有固晶胶的LED支架上；
3）固晶胶烘烤：将LED支架送入烘烤站中进行固晶胶烘烤，使LED晶片固定于LED支架上，固晶胶烘烤完成后进行推力测试；
4）焊线：用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 60-70mw，焊接压力100-120gms，焊接时间20ms，键合区温度170-180℃，焊线后进行拉力测试；
选用的镀钯铜线进行拉力测试要求断B或C点≥8g；
5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；
6）烘烤：让胶水冲锋固化，同时对LED晶片进行热老化。
本发明可用其他的不违背本发明的精神或主要特征的具体形式来概述。因此，无论从哪一点来看，本发明的上述实施方案都只能认为是对本发明的说明而不能限制发明，权利要求书指出了本发明的范围，而上述的说明并未指出本发明的范围，因此，在与本发明的权利要求书相当的含义和范围内的任何变化，都应认为是包括在权利要求书的范围内。

Claims (2)

1.一种基于镀钯铜线的LED封装工艺，其特征在于，按照以下步骤进行：
1）原物料准备：采用超声波清洗LED支架，并烘干，然后将固晶胶水解冻；
2）固晶生产：将LED晶片放置于涂有固晶胶的LED支架上；
3）固晶胶烘烤：将LED支架送入烘烤站中进行固晶胶烘烤，使LED晶片固定于LED支架上；
4）焊线：用镀钯铜线在焊线机上将LED晶片的正负极与LED支架的正负极电性连接，所述镀钯铜线中单晶铜线纯度≥99.99%，镀钯铜线表面覆0.1-0.2为μm厚度防氧化钯金属层，镀钯铜线的直径为0.9mil，LED晶片与合金线的键合参数：焊接功率 40-70mw，焊接压力70-120gms，焊接时间10-20ms，键合区温度160-180℃；
5）点胶：利用胶水将已经固晶、焊线完成的半成品封装；
6）烘烤：让胶水冲锋固化，同时对LED晶片进行热 老化。
2.根据权利要求1所述的一种基于镀钯铜线的LED封装工艺，其特征在于：焊线时用氮气保护。
CN201510147637.8A 2015-03-31 2015-03-31 一种基于镀钯铜线的led封装工艺 Pending CN104810457A (zh)

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CN109326706A (zh) * 2018-09-19 2019-02-12 北京大学东莞光电研究院 一种基于石墨烯合金线的led封装方法
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