CN104808017A - Probe for near-field optical microscopes and preparation method thereof - Google Patents
Probe for near-field optical microscopes and preparation method thereof Download PDFInfo
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- CN104808017A CN104808017A CN201410036355.6A CN201410036355A CN104808017A CN 104808017 A CN104808017 A CN 104808017A CN 201410036355 A CN201410036355 A CN 201410036355A CN 104808017 A CN104808017 A CN 104808017A
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Abstract
The invention provides a probe for near-field optical microscopes. The probe comprises a cantilever beam substrate, a semiconductor needlepoint arranged on the cantilever beam substrate, and two metal electrodes arranged on the semiconductor needlepoint oppositely. The semiconductor needlepoint and the two metal electrodes form a metal-semiconductor-metal photoelectric detector which is used for converting optical signals into electrical signals, wherein one metal electrode is used to be connected with an external direct-current bias voltage loading device, and the other metal electrode is used for collecting light current and transmitting the light current to a controller of a near-field optical microscope. The probe of the invention has the advantage that by adopting the probe, the structure of a near-field optical microscope can be simplified, the operation complexity of a near-field optical microscope can be reduced, the range of application can be greatly expanded, and transfer and replacement of the probe in various environments are facilitated.
Description
Technical field
The present invention relates to technical field of optical test, particularly relate to a kind of probe for Near-field Optical Microscope and preparation method thereof.
Background technology
Measure material to the absorption of light, scattering and luminescence phenomenon, be the important laboratory facilities of the transition of research semiconductor carriers, compound and lattice motor pattern, and sample nondestructive is hindered.And along with the development of nanometer technology, the yardstick of the interested materials and devices of people is more and more less; And common optical detection means are subject to the restriction of microcobjective diffraction limit, its spatial resolution is generally in micron number magnitude.And since the eighties in 20th century, with the rapid advances of scanning probe microscopy technology, it combines with optical detector technology, the Near-field Optical Microscope developed, there is the optical space resolution exceeding diffraction limit, become a kind of important means in the important aspect and nanostructured research addressed this problem.
The same with other scanning probe microscopy, Near-field Optical Microscope is also that a needle point is placed in sample surfaces, by the tunnel current of detection needle point sample room or atomic force interact maintain needle point sample interval from constant, usually on the order of magnitude of 1 nm.And then by the scanning of needle point at sample surfaces, the light signal on pointwise collected specimens surface.Near-field Optical Microscope realizes mainly through two kinds of modes the high spatial resolution exceeding optical diffraction limit: porose probe Near-field Optical Microscope and diffuse transmission type Near-field Optical Microscope.
Figure 1A and Figure 1B is depicted as the probe schematic diagram of Near-field Optical Microscope in prior art.See Figure 1A, porose probe Near-field Optical Microscope uses a tip to open the optical fiber probe 10 of the metal-plated membrane of aperture 11, and the diameter of the aperture 11 opened is much smaller than optical wavelength, by the near field optic signal on this aperture 11 collected specimens 13 surface and by fiber optic conduction to outside photodetector.See Figure 1B, diffuse transmission type Near-field Optical Microscope adopts a metal needle point 12, the concussion of metal surface phasmon, " lightning rod " effect of point discharge and the effect such as metal needle point 12 and dipole concussion antenna effect is utilized electromagnetic field local to be comprised around metal needle point 12 sample 13, form the near field optic signal strengthened, then collect these signals by optical systems such as microcobjectives and pass to photodetector.Finally, photodetector converts the light signal that needle point pointwise collects to electric signal by computer acquisition and record.
And in actual applications, the limitation of above-mentioned working method is photodetector always in the place that distance needle point is distant, all need light signal transduction that needle point is collected by complicated optical facilities to photodetector.For the mode of porose probe, always connect a long optical fiber after needle point, be connected to the coupling fiber mechanism before photodetector to pass to light signal from needle point always; For the mode of diffuse transmission type, also need a set ofly the optical system of multiple dimension minute adjustment the focus long-time stable of microcobjective can accurately be aimed at the position at needle point place, gathered near field optic signal that needle point strengthens and passed to photodetector at a distance.This all considerably increases the responsible degree of operation.
Summary of the invention
Technical matters to be solved by this invention is, a kind of probe for Near-field Optical Microscope and preparation method thereof is provided, it can simplify Near-field Optical Microscope structure and operation complexity, greatly widens its usable range, thus facilitates the transmission of probe in various environment and replacing.
In order to solve the problem, the invention provides a kind of probe for Near-field Optical Microscope, comprise semi-girder substrate, be arranged on the suprabasil semiconductor needle point of described semi-girder, be arranged on two metal electrodes on semiconductor needle point, described two metal electrodes are oppositely arranged, described semiconductor needle point and two metal electrodes form the MSM-PD with low being used for light signal being converted to electric signal, one of them metal electrode is used for being connected with an external dc bias voltage charger, another metal electrode is for collecting photocurrent and photocurrent being transferred to the controller of Near-field Optical Microscope.
Further, the material of described semiconductor needle point is III-group-III nitride.
Further, described III-group-III nitride comprises gallium nitride, aluminium nitride, indium nitride and alloy thereof.
A preparation method for the above-mentioned probe for Near-field Optical Microscope, comprises the steps: to provide a semi-girder substrate; Described semi-girder substrate forms semiconductor needle point; Described semiconductor needle point forms two metal electrodes be oppositely arranged; Described semiconductor needle point and two metal electrodes form the MSM-PD with low being used for light signal being converted to electric signal.
Further, the described step forming semiconductor needle point in described semi-girder substrate also to comprise the steps: in described semi-girder substrate grown semiconductor layer, silicon dioxide layer and metal level successively; Photoresist protection is scribbled relative to position semi-girder substrate making semiconductor needle point at described layer on surface of metal; Remove the metal level not having photoresist to protect and silicon dioxide layer successively, make on described semiconductor layer, form a projection, the composition of described projection is followed successively by silicon dioxide layer, metal level and photoresist from semiconductor layer; Remove the photoresist in described projection and metal level successively, form the projection only comprising silicon dioxide layer; Etch described semiconductor layer and silicon dioxide layer, disappear to silicon dioxide layer, form semiconductor needle point, outside described semiconductor needle point position, expose semi-girder substrate.
Further, the described step forming two metal electrodes be oppositely arranged on described semiconductor needle point also comprises the steps: to deposit a metallic film at described semiconductor needle surface; Being etched by described metallic film is two electrodes be oppositely arranged, and described semiconductor needle point and two metal electrodes form MSM-PD with low, and described MSM-PD with low is used for light signal to be converted to electric signal.
Further, in described semi-girder substrate after grown semiconductor layer, before growth silicon dioxide layer, second half conductor layer that continued growth one is different from described semiconductor layer material on described semiconductor layer.
Further, the material of described semiconductor needle point is III-group-III nitride.
For a probe for Near-field Optical Microscope, comprise semi-girder substrate, be formed at the suprabasil semiconductor needle point of described semi-girder, and be formed at two metal electrodes on described semiconductor needle point.
The invention has the advantages that, convert near field optic signal to electric signal by semiconductor needle point itself to export, thus the light signal transduction that probe tip collects by the optical coupling system avoiding use complexity near field optic is measured is to photodetector at a distance, simplify Near-field Optical Microscope structure and operation complexity, greatly widen its usable range, thus facilitate the transmission of probe in various environment (comprising ultra-high vacuum environment) and replacing, and at substantial manpower in an experiment is not needed to regulate optical system to make it stably aim at probe tip.
Accompanying drawing explanation
Figure 1A and Figure 1B is depicted as the probe schematic diagram of Near-field Optical Microscope in prior art;
Fig. 2 A is depicted as the side schematic view of the present invention for the probe of Near-field Optical Microscope;
Fig. 2 B is depicted as the vertical view of the present invention for the probe of Near-field Optical Microscope;
Figure 3 shows that the step schematic diagram of the preparation method of the probe for Near-field Optical Microscope;
Fig. 4 A ~ Fig. 4 H and 5A ~ Fig. 5 H is depicted as the preparation flow figure of the present invention for the probe of Near-field Optical Microscope, and wherein, Fig. 4 A ~ Fig. 4 H is side view, and Fig. 5 A ~ Fig. 5 H is vertical view.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to the probe for Near-field Optical Microscope provided by the invention and preparation method thereof.
Fig. 2 A is depicted as the side schematic view of the present invention for the probe of Near-field Optical Microscope, and Fig. 2 B is depicted as the vertical view of the present invention for the probe of Near-field Optical Microscope.Shown in Fig. 2 A and Fig. 2 B, the present invention comprises semi-girder substrate 20 for the probe of Near-field Optical Microscope, the semiconductor needle point 21 be arranged in described semi-girder substrate 20, two metal electrodes 22 be arranged on semiconductor needle point 21.
Described semi-girder substrate 20 can adopt monocrystalline silicon to prepare.Described semiconductor needle point 21 can adopt III-group nitride material to prepare, such as, and gallium nitride, aluminium nitride, indium nitride and alloy thereof.According to the component that they are different, it until ultraviolet band scope, and is all direct band-gap semicondictor that its energy gap can cover from infrared, visible ray, has excellent light transfer characteristic; And there is character and the strong Radiation hardness such as high thermal conductivity, chemical stability good (hardly by any acid corrosion), various environment for use can be applied to.Described metal electrode 22 can adopt preparation of metals, such as, and aluminium.
Described two metal electrodes 22 are oppositely arranged, described semiconductor needle point 21 and two metal electrodes 22 form the MSM-PD with low (MSM photoelectric detector) being used for light signal being converted to electric signal, one of them metal electrode 22 is connected with an external dc bias voltage charger, and another metal electrode 22 is collected photocurrent and photocurrent is transferred to the controller of Near-field Optical Microscope.Further, between the needle point of semiconductor needle point 21 this pair of metal electrodes 22 most advanced and sophisticated, have a distance, described distance can be 50 ~ 100 nm.
The built in field that MSM-PD with low (MSM photoelectric detector) utilizes metal-semiconductor contact near interface Schottky barrier to cause makes photo-generate electron-hole to separation, and is diffused in two metal electrodes, forms photocurrent.Its only needs to prepare two arrays of electrodes in semiconductor the same side, and two electrodes can use the metal of identical material, and do not prepare the electrode of Ohmic contact, do not need to adulterate to semiconductor, processing preparation is simple.Meanwhile, MSM-PD with low (MSM photoelectric detector) has the advantages such as response speed is exceedingly fast, dark current is low.These good characteristics are the present invention is the physical basis breaking through typical near-field optical microscope limitation.
The probe that the present invention is used for Near-field Optical Microscope uses as conventional atomic force microscope.Probe of the present invention is installed on afm scan head, under the control of atomic force microscope controller, make semiconductor needle point 21 contact with sample surfaces, and semiconductor needle point 21 is moved to sample surfaces position to be measured, by semiconductor needle point 21 most advanced and sophisticated maintain with the interaction of sample room power semiconductor needle point 21 and sample interval from constant.
Detection and the interaction force between Quality control and semiconductor needle point 21 are one of atomic force microscope basic functions, and typically, the acting force between Quality control and semiconductor needle point 21 is constant, namely mean that the distance between the two is constant.Simultaneously, semiconductor needle point 21 and two metal electrodes constitute MSM-PD with low (MSM photoelectric detector) jointly, a metal electrode 22 loads direct current (DC) bias (MSM-PD with low must have in bias voltage situation work) wherein, when having light signal near semiconductor needle point 21 tip, photocurrent can be produced in metal electrode 22, the photocurrent that another metal electrode 22 is collected sends into Near-field Optical Microscope controller after galvo-preamplifier amplifies, and finally by control computer acquisition and record, and form near field optic picture by controlling semiconductor needle point 21 in sample surfaces point by point scanning.
The present invention also provides a kind of preparation method of the above-mentioned probe for Near-field Optical Microscope, and Fig. 3 A is depicted as the step schematic diagram of the preparation method of the probe for Near-field Optical Microscope.See Fig. 3, described method comprises the steps: step S30, provides a semi-girder substrate; Step S31, in described semi-girder substrate, form semiconductor needle point; Step S32, on described semiconductor needle point formed two metal electrodes be oppositely arranged; Described semiconductor needle point and two metal electrodes form MSM-PD with low, and described MSM-PD with low is used for light signal to be converted to electric signal.
Described step S31 forms semiconductor needle point step and further comprises following steps in described semi-girder substrate: see Fig. 3 B, step S310, in described semi-girder substrate grown semiconductor layer, silicon dioxide layer and metal level successively; Step S311, scribble photoresist protection at described layer on surface of metal relative to position semi-girder substrate making semiconductor needle point; The metal level that step S312, successively removal do not have photoresist to protect and silicon dioxide layer, make on described semiconductor layer, form a projection, the composition of described projection is followed successively by silicon dioxide layer, metal level and photoresist from semiconductor layer; Step S313, remove photoresist in described projection and metal level successively, form the projection only comprising silicon dioxide layer; Step S314, etch described semiconductor layer and silicon dioxide layer, disappear to silicon dioxide layer, form semiconductor needle point.
The step that described step S32 forms two metal electrodes be oppositely arranged on described semiconductor needle point further comprises following steps: see Fig. 3 C, step S320, deposit a metallic film at described semiconductor needle surface; Step S321, be two electrodes be oppositely arranged by described metallic film etching, described semiconductor needle point and two metal electrodes form the MSM-PD with low for light signal being converted to electric signal.
Fig. 4 A ~ Fig. 4 H and 5A ~ Fig. 5 H is depicted as the preparation flow figure of the present invention for the probe of Near-field Optical Microscope, and wherein, Fig. 4 A ~ Fig. 4 H is side view, and Fig. 5 A ~ Fig. 5 H is vertical view.
See Fig. 4 A and Fig. 5 A, refer step S30, provide a semi-girder substrate 401.Described semi-girder substrate 401 can adopt monocrystalline silicon to prepare.
See Fig. 4 B and Fig. 5 B, refer step S301, grown semiconductor layer 402, silicon dioxide layer 403 and metal level 404 successively in described semi-girder substrate 401.
The method of described grown semiconductor layer 402 can be metal organic compound chemical gaseous phase deposition method (MOCVD), and metal organic compound chemical gaseous phase deposition method is prior art, is not repeated herein.The thickness of described semiconductor layer 402 can be 1 ~ 4 micron.Described semiconductor layer 402 can adopt III-group nitride material to prepare, such as, and gallium nitride, aluminium nitride, indium nitride and alloy thereof.According to the component that they are different, it until ultraviolet band scope, and is all direct band-gap semicondictor that its energy gap can cover from infrared, visible ray, has excellent light transfer characteristic; And there is character and the strong Radiation hardness such as high thermal conductivity, chemical stability good (hardly by any acid corrosion), various environment for use can be applied to.
Further, be used for the wavelength of the light that the probe of Near-field Optical Microscope detects according to the present invention, if desired also can on semiconductive thin film other III-group nitride material of regrowth 10 ~ 100 nm.
The method of described growth silicon dioxide layer 403 is plasma enhanced chemical vapor deposition method (PECVD), and plasma enhanced chemical vapor deposition method is prior art, is not repeated herein.
The method of described growing metal layer 404 is electron beam evaporation method, and electron beam evaporation method is prior art, is not repeated herein.In this embodiment, the material of described metal level 404 is nickel, in other embodiments of the present invention, also can be other metals such as gold.
See Fig. 4 C and Fig. 5 C, refer step S311, scribble photoresist 405 on described metal level 404 surface relative to position semi-girder substrate making semiconductor needle point and protect.Described photoresist 405 can be PMMA photoresist.In this embodiment, only scribble photoresist 405 on described metal level 404 surface relative to position semi-girder substrate making semiconductor needle point to protect.And in other embodiments of the present invention; described photoresist 405 is coated in all surfaces of metal level 404; then need the photoresist 405 on metal level 404 surface of removing further outside the position making semiconductor needle point, make only to scribble photoresist 405 on described metal level 404 surface relative to position semi-girder substrate making semiconductor needle point and protect.The method of described removal photoresist 405 is ultraviolet lithography.
See Fig. 4 D and Fig. 5 D; refer step S312; remove the metal level 404 not having photoresist 405 to protect and silicon dioxide layer 403 successively; make on described semiconductor layer 402, form a projection, the composition of described projection is followed successively by silicon dioxide layer 403, metal level 404 and photoresist 405 from semiconductor layer 402.
The method removing described metal level 404 is different according to the material difference of metal level 404, such as, when metal level 404 is nickel, can adopt liquor ferri trichloridi wet etching nickel dam.Adopt nickel to be as the advantage of the material of metal level 404, when this step removes metal level 404, only need with liquor ferri trichloridi corrosion nickel, method is simple, safety, cost are low.The method removing described silicon dioxide layer 403 is the method (RIE) of reactive ion etching.The method of described liquor ferri trichloridi wet etching metal film and reactive ion etching is prior art, is not repeated herein.
See Fig. 4 E and Fig. 5 E, refer step S313, remove the photoresist 405 in described projection and metal level 404 successively, form the projection only comprising silicon dioxide layer 403.The method removing described photoresist 405 is soaked for adopting acetone.Remove the method for described metal level 404 for adopting liquor ferri trichloridi wet etching metal film.
See Fig. 4 F and Fig. 5 F, refer step S314, etch described semiconductor layer 402 and silicon dioxide layer 403, disappear to silicon dioxide layer 403, form semiconductor needle point 406, outside semiconductor needle point 406 position, expose semi-girder substrate 401.In this embodiment, the method for described etching semiconductor layer 402 and silicon dioxide layer 403 is inductively coupled plasma method (ICP), and the method is prior art, is not repeated herein.When adopting inductively coupled plasma method etching semiconductor layer 402 and silicon dioxide layer 403, silicon dioxide layer 403 etching speed is slower than semiconductor layer 402, so form taper gradually under the region that silicon dioxide layer 403 covers, until silicon dioxide layer 403 disappears, form semiconductor needle point 406, now semiconductor layer 402 is not etched completely away.
See Fig. 4 G and Fig. 5 G, refer step S320, at described semiconductor needle point 406 surface deposition one metallic film 407.The method of the method electron beam evaporation of described depositing metal films 407, the material of described metallic film 407 can be metallic aluminium.
See Fig. 4 H and Fig. 5 H, refer step S321, being etched by described metallic film 407 is two metal electrodes be oppositely arranged 408, and described semiconductor needle point 406 and two metal electrodes 408 form the MSM-PD with low being used for light signal being converted to electric signal.The method of described etching metal electrode 408 is the method for focused ion beam.Further, between the needle point of semiconductor needle point 406 this pair of metal electrodes 408 most advanced and sophisticated, have a distance, described distance can be 50 ~ 100 nm.
Enumerate the present invention below in the embodiment of the preparation method of the probe of Near-field Optical Microscope.
A () grows the semiconductor layer of 1 ~ 4 μm in the semi-girder substrate of single crystalline Si by MOCVD method, such as, and GaN film layer.This growing method belongs to existing known technology, no longer describes in detail herein.According to the wavelength of detected light, also other III-group nitride material of regrowth 10 ~ 100 nm on GaN film layer if desired.
B () uses PECVD method growth 300nm silicon dioxide layer in described semiconductor layer surface.
C () uses on described silicon dioxide layer surface the nickel dam that electron beam evaporation method deposition 10 ~ 100 nm are thick.
D () is at described nickel dam surface spin coating PMMA photoresist.
E () removes most of PMMA photoresist by ultraviolet lithography, retain the discoid PMMA photoresist of diameter 0.5 ~ 1 μm.
F () be wet etching nickel dam in liquor ferri trichloridi, remove the nickel dam of other parts except having PMMA photoresist protection zone.
G () RIE method etches away the silicon dioxide layer of other parts except the region of nickel dam protection.
H () is soaked in acetone and is removed PMMA photoresist disk, and then in liquor ferri trichloridi, soak the nickel dam removed originally below photoresist.
(i) ICP method etching semiconductor layer, silicon dioxide layer disk also can be etched, but etching speed is slower than semiconductor layer, can form taper gradually below the region having silicon dioxide layer disk to cover.
J () is etched to semiconductor layer disk and disappears, form semiconductor needle point.
K () uses the Al film of electron beam evaporation method plating 50 ~ 100 nm at semiconductor needle surface.
L Al film is portrayed as pair of metal electrodes by the method for focused-ion-beam lithography at semiconductor needle surface by (), the spacing between semiconductor needle point this pair of metal electrodes most advanced and sophisticated is 50 ~ 100 nm.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. the probe for Near-field Optical Microscope, it is characterized in that, comprise semi-girder substrate, be arranged on the suprabasil semiconductor needle point of described semi-girder, be arranged on two metal electrodes on semiconductor needle point, described two metal electrodes are oppositely arranged, described semiconductor needle point and two metal electrodes form the MSM-PD with low being used for light signal being converted to electric signal, one of them metal electrode is used for being connected with an external dc bias voltage charger, another metal electrode is for collecting photocurrent and photocurrent being transferred to the controller of Near-field Optical Microscope.
2. the probe for Near-field Optical Microscope according to claim 1, is characterized in that, the material of described semiconductor needle point is III-group-III nitride.
3. the probe for Near-field Optical Microscope according to claim 2, is characterized in that, described III-group-III nitride comprises gallium nitride, aluminium nitride, indium nitride and alloy thereof.
4. a preparation method for the probe for Near-field Optical Microscope according to claim 1, is characterized in that, comprising the steps: provides a semi-girder substrate; Described semi-girder substrate forms semiconductor needle point; Described semiconductor needle point forms two metal electrodes be oppositely arranged; Described semiconductor needle point and two metal electrodes form the MSM-PD with low being used for light signal being converted to electric signal.
5. the preparation method of the probe for Near-field Optical Microscope according to claim 4, it is characterized in that, the described step forming semiconductor needle point in described semi-girder substrate further comprises following steps: grown semiconductor layer, silicon dioxide layer and metal level successively in described semi-girder substrate; Protect relative to position coating photoresist semi-girder substrate making semiconductor needle point at described layer on surface of metal; Remove the metal level not having photoresist to protect and silicon dioxide layer successively, make on described semiconductor layer, form a projection, the composition of described projection is followed successively by silicon dioxide layer, metal level and photoresist from semiconductor layer; Remove the photoresist in described projection and metal level successively, form the projection only comprising silicon dioxide layer; Etch described semiconductor layer and silicon dioxide layer, disappear to silicon dioxide layer, form semiconductor needle point, outside described semiconductor needle point position, expose semi-girder substrate.
6. the preparation method of the probe for Near-field Optical Microscope according to claim 4, it is characterized in that, the described step forming two metal electrodes be oppositely arranged on described semiconductor needle point further comprises following steps: deposit a metallic film at described semiconductor needle surface; Being etched by described metallic film is two electrodes be oppositely arranged, and described semiconductor needle point and two metal electrodes form MSM-PD with low, and described MSM-PD with low is used for light signal to be converted to electric signal.
7. the preparation method of the probe for Near-field Optical Microscope according to claim 5, it is characterized in that, in described semi-girder substrate after grown semiconductor layer, before growth silicon dioxide layer, second half conductor layer that continued growth one is different from described semiconductor layer material on described semiconductor layer further.
8. the preparation method of the probe for Near-field Optical Microscope according to claim 4, is characterized in that, the material of described semiconductor needle point is III-group-III nitride.
9. for a probe for Near-field Optical Microscope, it is characterized in that, comprise semi-girder substrate, be formed at the suprabasil semiconductor needle point of described semi-girder, and be formed at two metal electrodes on described semiconductor needle point.
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| CN108387855A (en) * | 2018-04-24 | 2018-08-10 | 金华职业技术学院 | A kind of dual-beam magnetic light spectrometer |
| CN107064565B (en) * | 2017-05-27 | 2024-04-23 | 中国科学院宁波材料技术与工程研究所 | Magneto-electric-thermal multiparameter coupling microscope probe, preparation method and detection method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107064565A (en) * | 2017-05-27 | 2017-08-18 | 中国科学院宁波材料技术与工程研究所 | The hot many reference amounts coupling microscope probe of magnetoelectricity, its preparation method and detection method |
| CN107064565B (en) * | 2017-05-27 | 2024-04-23 | 中国科学院宁波材料技术与工程研究所 | Magneto-electric-thermal multiparameter coupling microscope probe, preparation method and detection method thereof |
| CN108387855A (en) * | 2018-04-24 | 2018-08-10 | 金华职业技术学院 | A kind of dual-beam magnetic light spectrometer |
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