CN104805401A - Production method for plating titanium carbide on diamond surface - Google Patents
Production method for plating titanium carbide on diamond surface Download PDFInfo
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- CN104805401A CN104805401A CN201510132723.1A CN201510132723A CN104805401A CN 104805401 A CN104805401 A CN 104805401A CN 201510132723 A CN201510132723 A CN 201510132723A CN 104805401 A CN104805401 A CN 104805401A
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Abstract
The invention relates to the technical field of diamond surface treatment, in particular to a production method for plating titanium carbide on a diamond surface. The method comprises steps as follows: a, vacuum pumping: firstly, a diamond is placed in a plating chamber of a vacuum ion plating machine and the plating chamber is subjected to vacuum pumping to be lower than 3*10<-3> Pa; b, diamond surface cleaning: the required voltage ranges from 390 V to 410 V, the direct current ranges from 1.2 A to 1.4 A, the vacuum degree is 3*10<-2> Pa, the ion source is at 4.8-5.2 KV, the deflecting voltage ranges from 90 V to 110 V, and the time is 5-10 min; c, diamond surface plating: the cathode is made of a titanium metal material (the purity is 99.99%) and the like. The method has the advantages that a titanium carbide film on the diamond is easy to realize, stable and firm.
Description
Technical field
The present invention relates to diamond surface processing technology field.
Background technology
The material that diamond surface is coated with titanium carbonitride film has special purposes; the sawing made from the diamond of titanium carbonitride film or grinding product can be protected diamond to corrode from greying in the case of a high temperature because of its plated film and form compound bonding; strengthen carcass to diamond hold, thus reduce threshing phenomenon.
In prior art, the plating titanium carbonitride film of diamond surface is that what to adopt is the micro-evaporation plating method of vacuum, and such method has processing condition harshness, need the shortcoming that heats, not easily realize; In addition, the titanium carbonitride film that such method plates out has that also to have compactness poor, unsound shortcoming, have impact on diamond and is arranged on result of use on sawing or grinding product.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of easy realization be provided, plated film is stablized, the diamond surface of plated film solidity plating titanium carbonitride film making method.
Technical scheme of the present invention is such: a kind of making method of diamond surface plating titanium carbonitride film, and it carries out in diamond vacuum plating unit, and it comprises the following steps:
A, to vacuumize
First diamond is placed in the coating chamber of vaccum ion coater, coating chamber is evacuated to 3 × 10
-3below Pa;
B, diamond surface are clean
Voltage: 390-410V
Galvanic current: 1.2-1.4A
Vacuum tightness: 3*10-2Pa
Ion source: 4.8-5.2KV ion source
Deflecting voltage: 90-110V
Time: 5-10 minute
C, diamond surface plated film
Negative electrode: titanium metal material (purity is 99.99%)
Anode pole: diamond powder
Voltage: 440-460V
Pulsed current: 0.8A-1.0A
Acetylene flow: 5-6sccm
Deflecting voltage: 180-220V
High-purity argon gas flow: 15sccm
Working hour: 180 minutes-200 minutes
Temperature: temperature 280---320 DEG C
Move mode: bortz powder moves
Surface can be obtained after above-mentioned steps process there is resin molding structural diamond.
Preferably, the voltage in step b is 400V, and galvanic current is 1.3A, and ion source is 5. KV ion sources, deflecting voltage: 100V.
Preferably, in step c, voltage is 450V, and pulsed electrical is 0.9A, and deflecting voltage is 200V, and temperature is 300 DEG C.
The invention has the beneficial effects as follows: such method has the advantage that diamond titanium carbide plated film easily realizes, plated film is stablized, plated film is solid; Voltage in step b is 400V, and galvanic current is 1.3A, and ion source is 5. KV ion sources, deflecting voltage: 100V; And voltage is 450V in step c, pulsed electrical is 0.9A, and deflecting voltage is 200V, and temperature is 300 DEG C, can reach best effect, and coating process so in addition also has complete, the uniform advantage of plated film.
Embodiment
Diamond vacuum plating unit, it is the equipment of diamond vacuum plating, mainly integrate vacuumize, clean, plated film and equipment, it can be coated with alloy film at diamond surface, diamond vacuum plating unit has coating chamber, during plated film, diamond is placed in coating chamber, coating chamber connection control system, and Controlling System can regulate the parameters such as vacuum tightness, electric current, voltage, deflecting voltage; As required; the parameter such as vacuum tightness, ionogenic voltage of first stage (surperficial impurity elimination) can be set when plated film; second stage cleans diamond surface; and the voltage of phase III (plated film stage), galvanic current, deflecting voltage, the working hour, shielding gas the parameter such as flow, temperature, choose target etc.; but selected parameter is different, most important to adamantine coating quality.
The sawing that the diamond that coating quality is good is made or grinding product have long-lived advantage.
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1
Adopt the micro-method of evaporating of vacuum to carry out plating titanium carbonitride film to diamond diamond prior art, need Heating temperature 900 DEG C, this plated film bortz powder becomes the first diamond.
Emery wheel work-ing life of producing with the first bortz powder is 45 hours, and with microscopic examination, this adamantine plated film has broken partial section, and in uneven state.
Following embodiment is all carry out identical vacuumizing, arranging residual air step, the step a namely in summary of the invention to diamond, and after each embodiment, technique is variant.
Embodiment 2
B, diamond surface are clean
Voltage: 390V
Galvanic current: 1.3A
Vacuum tightness: 3*10-2Pa
Ion source: 4.8KV ion source
Deflecting voltage: 90V
Time: 5 minutes
C, diamond surface plated film
Negative electrode: titanium metal material (purity is 99.99%)
Anode pole: diamond powder
Voltage: 440V
Pulsed current: 0.8A A
Acetylene flow: 5sccm
Deflecting voltage: 180V
High-purity argon gas flow: 15sccm
Working hour: 180 minutes
Temperature: temperature 280 DEG C
Move mode: bortz powder moves
The second diamond that surface has titanium carbonitride film structure can be obtained after above-mentioned steps process.
Emery wheel work-ing life of producing with the second diamond is 75 hours.With microscopic examination, this adamantine plated film is complete, and in uniform state.
Embodiment 3
B, diamond surface are clean
Voltage: 410V
Galvanic current: 1.4A
Vacuum tightness: 3*10-2Pa
Ion source: 5.2KV ion source
Deflecting voltage: 110V
Time: 10 minutes
C, diamond surface plated film
Negative electrode: titanium metal material (purity is 99.99%)
Anode pole: diamond powder
Voltage: 460V
Pulsed current: 1.0A
Acetylene flow: 6sccm
Deflecting voltage: 220V
High-purity argon gas flow: 15sccm
Working hour: 200 minutes
Temperature: temperature 320 DEG C
Move mode: bortz powder moves
The 4th diamond that surface has titanium carbonitride film structure can be obtained after above-mentioned steps process.
Emery wheel work-ing life of producing with the 4th diamond is 98 hours, and with microscopic examination, this adamantine plated film is complete, and in uniform state, and diamond does not have disrepair phenomenon.
Embodiment 5
B, diamond surface are clean
Voltage: 400V
Galvanic current: 1.3A
Vacuum tightness: 3*10-2Pa
Ion source: 5.0KV ion source
Deflecting voltage: 100V
Time: 8 minutes
C, diamond surface plated film
Negative electrode: titanium metal material (purity is 99.99%)
Anode pole: diamond powder
Voltage: 450V
Pulsed current: 0.9A
Acetylene flow: 5.5sccm
Deflecting voltage: 200V
High-purity argon gas flow: 15sccm
Working hour: 190 minutes
Temperature: temperature 300 DEG C
Move mode: bortz powder moves
The five metals hard rock that surface has titanium carbonitride film structure can be obtained after above-mentioned steps process.
Emery wheel work-ing life of producing with the second diamond is 120 hours.With microscopic examination, this adamantine plated film is the most complete, and in the most equally distributed state.
Should be noted that made emery wheel be other compositions and specification is identical, processing to as if identical.
Contriver has also done multiple similar experiment, proves that above-mentioned method is feasible, and obtains good effect.
The foregoing is only specific embodiments of the invention, but constitutional features of the present invention is not limited to this, any those skilled in the art is in the field of the invention, and the change done or modification are all encompassed in the scope of the claims of the present invention.
Claims (3)
1. a making method for diamond surface plating titanium carbonitride film, it carries out in diamond vacuum plating unit, and it comprises the following steps:
A, to vacuumize
First diamond is placed in the coating chamber of vaccum ion coater, coating chamber is evacuated to 3 × 10
-3below Pa;
B, diamond surface are clean
Voltage: 390-410V
Galvanic current: 1.2-1.4A
Vacuum tightness: 3*10-2Pa
Ion source: 4.8-5.2KV ion source
Deflecting voltage: 90-110V
Time: 5-10 minute
C, diamond surface plated film
Negative electrode: titanium metal material (purity is 99.99%)
Anode pole: diamond powder
Voltage: 440-460V
Pulsed current: 0.8A-1.0A
Acetylene flow: 5-6sccm
Deflecting voltage: 180-220V
High-purity argon gas flow: 15sccm
Working hour: 180 minutes-200 minutes
Temperature: temperature 280---320 DEG C
Move mode: bortz powder moves
Surface can be obtained after above-mentioned steps process there is resin molding structural diamond.
2. the making method of diamond surface plating titanium carbonitride film according to claim 1, it is characterized in that: the voltage in step b is 400V, galvanic current is 1.3A, and ion source is 5. KV ion sources, deflecting voltage: 100V.
3. the making method of diamond surface plating titanium carbonitride film according to claim 1 and 2, it is characterized in that: in step c, voltage is 450V, pulsed electrical is 0.9A, and deflecting voltage is 200V, and temperature is 300 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510132723.1A CN104805401A (en) | 2015-03-26 | 2015-03-26 | Production method for plating titanium carbide on diamond surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510132723.1A CN104805401A (en) | 2015-03-26 | 2015-03-26 | Production method for plating titanium carbide on diamond surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104805401A true CN104805401A (en) | 2015-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510132723.1A Pending CN104805401A (en) | 2015-03-26 | 2015-03-26 | Production method for plating titanium carbide on diamond surface |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752267A (en) * | 2005-08-18 | 2006-03-29 | 陆轻铀 | Method for forming chemical combination metal plating film on diamond granules |
| CN103361615A (en) * | 2013-06-24 | 2013-10-23 | 南京航空航天大学 | Equipment for depositing nano coating of double-cathode plasma on surface of diamond and process |
| CN103436845A (en) * | 2013-06-18 | 2013-12-11 | 广东工业大学 | Method for coating TiC layer on surface of diamond particles |
-
2015
- 2015-03-26 CN CN201510132723.1A patent/CN104805401A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752267A (en) * | 2005-08-18 | 2006-03-29 | 陆轻铀 | Method for forming chemical combination metal plating film on diamond granules |
| CN103436845A (en) * | 2013-06-18 | 2013-12-11 | 广东工业大学 | Method for coating TiC layer on surface of diamond particles |
| CN103361615A (en) * | 2013-06-24 | 2013-10-23 | 南京航空航天大学 | Equipment for depositing nano coating of double-cathode plasma on surface of diamond and process |
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Application publication date: 20150729 |
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