CN104651796A - Resistance adjustment method of ITO thin film - Google Patents
Resistance adjustment method of ITO thin film Download PDFInfo
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- CN104651796A CN104651796A CN201310582867.8A CN201310582867A CN104651796A CN 104651796 A CN104651796 A CN 104651796A CN 201310582867 A CN201310582867 A CN 201310582867A CN 104651796 A CN104651796 A CN 104651796A
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Abstract
The invention provides a resistance adjustment method of ITO thin films. The method at least comprises following steps: (S1): feeding a process gas into a vacuum chamber and switching-on an excitation power supply to excite plasma generated by the process gas to bombard an ITO target material and to deposit the ITO thin film on a surface of a processed workpiece; (S2): stopping feeding the process gas into the vacuum chamber and switching-off the excitation power supply, maintaining the processed workpiece in the vacuum chamber for a preset time, wherein the resistance of the ITO thin film is adjusted by changing the preset time. The resistance adjustment method of the ITO thin films not only can reduce the resistance of the ITO thin films and improve resistance uniformity of the ITO thin films, thereby improving technology quality of the ITO thin film, but also can reduce investment cost and can simplify an adjustment process, thereby improving work efficiency and further improving economic benefit.
Description
Technical field
The invention belongs to semiconductor processing technology field, be specifically related to a kind of resistance adjustment method of ito thin film.
Background technology
Because ito thin film can improve the light extraction efficiency of semiconducter device to a great extent, therefore it is widely used in LED component.Further, the resistance of ito thin film is the principal element affecting LED component electric property, and usually when ito thin film thickness is identical, the resistance of ito thin film is less, and the electric property of LED component is better.
At present, usually adopt physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) equipment for preparing ito thin film on the surface of workpiece to be machined.Fig. 1 is the structure diagram of vacuum chamber in existing PVD equipment, refers to Fig. 1, and vacuum chamber 10 comprises bogey 11, target 12 and magnetron 13.Wherein, bogey 11 is arranged on the bottom of vacuum chamber 10, for carrying workpiece to be machined S; Target 12 is arranged on the top of reaction cavity 10, and is connected with the excitation power supply 14 being arranged on vacuum chamber 10 outside, in order to the process gas (such as, argon gas and oxygen) in vacuum chamber 10 is excited formation plasma body when excitation power supply 14 conducting; And, excitation power supply 14 provides negative bias to target 12, positive ion in plasma body, by the surface of the attraction bombardment target 12 of negative pressure, makes the atoms metal on target 12 surface overflow and be deposited on the surface of workpiece to be machined S, thus at the surface deposition ito thin film of workpiece to be machined S; Further, magnetron 13 is arranged on the top of target 12, in order to plasma body to be gathered in the below of target 12.
In order to improve the electric property of LED component, usually in the process of deposition ito thin film, change the parameter of the deposition ito thin films such as the output rating of excitation power supply, argon gas and the gas flow ratio of oxygen, the air pressure of vacuum chamber and temperature, diminish to make the square resistance Rs of ito thin film, and due to the resistance of ito thin film and its square resistance Rs proportional, therefore, the resistance of the less i.e. ito thin film of the square resistance Rs of ito thin film is less.Such as, ensureing that under the prerequisite that other Parameter Conditions are certain, the air pressure of vacuum chamber 10 is higher, and the square resistance Rs of the ito thin film of sediment-filled phase stack pile is larger; Or the temperature of vacuum chamber 10 is higher, the square resistance Rs of the ito thin film of sediment-filled phase stack pile is less; Or argon stream amount one timing, from small to large, the square resistance Rs of the ito thin film of sediment-filled phase stack pile first reduces rear increase to the airshed of oxygen.
But, the square resistance Rs being reduced ito thin film by aforesaid method is found in practical work process, this can make the square resistance Rs of ito thin film change greatly, thus make the resistance change of ito thin film larger, thus cause the resistance homogeneity of ito thin film poor, and then cause the processing quality of ito thin film poor.
Summary of the invention
The present invention is intended to solve the technical problem existed in prior art, provides a kind of resistance adjustment method of ito thin film, and it not only can reduce the resistance of ito thin film and improve the resistance homogeneity of ito thin film, thus can improve the processing quality of ito thin film; And can input cost be reduced, and make regulate process simple, thus can increase work efficiency, and then can increase economic efficiency.
The invention provides a kind of resistance adjustment method of ito thin film, at least comprise the following steps: step S1, delivery technology gas in vacuum chamber, and open excitation power supply, plasma bombardment ITO target is formed, with ito thin film described in the deposited on silicon of workpiece to be machined to excite described process gas; Step S2, stopping carrying described process gas in described vacuum chamber, and closes described excitation power supply, and make described workpiece to be machined keep preset duration in described vacuum chamber, regulating the resistance of described ito thin film by changing described preset duration.
Wherein, the scope of described preset duration is within 10 minutes.
Preferably, described preset duration is 6 minutes.
Wherein, in described step S1 and described step S2, the air pressure range of described vacuum chamber is at 1.0 ~ 7.0mT.
Wherein, described process gas comprises argon gas, and in described step S2, by the air pressure regulating the airshed of described argon gas to change described vacuum chamber, to regulate the resistance of described ito thin film.
Wherein, the scope of the airshed of described argon gas is at 0 ~ 200sccm.
Wherein, described step S1 comprises the following steps: step S11, in advance at the described ito thin film of deposited on silicon first thickness of described workpiece to be machined; Step S12, the described ito thin film of the first thickness deposits the described ito thin film of the second thickness.
Wherein, in described step S1, described process gas comprises argon gas and oxygen, and described excitation power supply comprises radio-frequency power supply and/or direct supply.
Wherein, parameter required in described step S11 comprises: the output rating of described radio-frequency power supply is 250W, and the output rating of described direct supply is 130W, and the airshed of described oxygen is 0.15sccm, the airshed of described argon gas is 35sccm, and the air pressure of described vacuum chamber is 1.0mT.
Wherein, parameter required in described step S12 comprises: the output rating of described radio-frequency power supply is 0W, and the output rating of described direct supply is 130W, and the airshed of described oxygen is 0.2sccm, the airshed of described argon gas is 80sccm, and the air pressure of described vacuum chamber is 2.0mT.
The present invention has following beneficial effect:
The resistance adjustment method of ito thin film provided by the invention, it comprises step S1, delivery technology gas in vacuum chamber, and opens excitation power supply, the plasma bombardment ITO target formed to excite process gas, and at the deposited on silicon ito thin film of workpiece to be machined; Step S2, stops delivery technology gas in vacuum chamber, and closes excitation power supply, and makes workpiece to be machined keep preset duration in vacuum chamber, regulates the resistance of ito thin film by changing preset duration.As from the foregoing, also step S2 is increased after depositing ito thin film in step sl, a small amount of process gas can be had due in vacuum chamber in step s 2, and the content of this process gas can change and affect ito thin film in preset duration, the square resistance of ito thin film is reduced, thus the resistance of ito thin film can be reduced and improve the resistance homogeneity of ito thin film, and then the processing quality of ito thin film can be improved; And, only by a small amount of process gas had in vacuum chamber in step s 2 to regulate the resistance of ito thin film, this with in prior art by compared with the parameter that changes the deposit film such as output rating of excitation power supply, input cost can be reduced, and make regulate process simple, thus can increase work efficiency, and then can increase economic efficiency.
Accompanying drawing explanation
Fig. 1 is the structure diagram of vacuum chamber in existing PVD equipment;
Fig. 2 is the FB(flow block) of the resistance adjustment method of ito thin film provided by the invention;
Fig. 3 is the graphic representation of the square resistance parameter of ito thin film;
Fig. 4 is the graphic representation of the uniformity parameters of the square resistance of ito thin film;
Fig. 5 is the graphic representation of the thickness parameter of ito thin film; And
Fig. 6 is the graphic representation of ito thin film to the film transmission rate parameter of wavelength 455nm.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, be described in detail below in conjunction with the resistance adjustment method of accompanying drawing to ito thin film provided by the invention.
Fig. 2 is the FB(flow block) of the resistance adjustment method of ito thin film provided by the invention.Refer to Fig. 2, the resistance adjustment method of this ito thin film at least comprises the following steps:
Step S1, delivery technology gas in vacuum chamber, and open excitation power supply, the plasma bombardment ITO target formed to excite process gas, and at the deposited on silicon ito thin film of workpiece to be machined;
Step S2, stops delivery technology gas in vacuum chamber, and closes excitation power supply, and makes workpiece to be machined keep preset duration in vacuum chamber, regulates the resistance of ito thin film by changing preset duration.
In the present embodiment, step S1 comprises the following steps,
Step S11, in advance at the ito thin film of deposited on silicon first thickness of workpiece to be machined, in the present embodiment, particularly, the first thickness is 20nm;
Step S12, the ito thin film of the first thickness deposits the ito thin film of the second thickness, and in the present embodiment, particularly, the second thickness is 100nm.
Wherein, in step sl, process gas comprises argon gas and oxygen, and excitation power supply comprises radio-frequency power supply RF and/or direct supply DC.Particularly, the parameter needed for ito thin film depositing 20nm thickness in step s 11 comprises: the output rating of radio-frequency power supply RF is 250W, and the output rating of direct supply DC is 130W, and the airshed of oxygen is 0.15sccm, the airshed of argon gas is 35sccm, and the air pressure of vacuum chamber is 1.0mT; The parameter needed for ito thin film depositing 100nm thickness in step s 12 comprises: the output rating of radio-frequency power supply RF is 0W, the output rating of direct supply DC is 130W, the airshed of oxygen is 0.2sccm, and the air flow value of argon gas is 80sccm, and the air pressure of vacuum chamber is 2.0mT.Therefore, can complete deposit thickness on the upper surface of workpiece to be machined is in step sl the ito thin film of 120nm.
After step S1 completes, particularly, in step s 2, stop carrying argon gas and oxygen in vacuum chamber, and close radio-frequency power supply RF and direct supply DC, and other parameters of maintenance vacuum chamber (such as, the temperature of vacuum chamber) remain unchanged, and be that the workpiece to be machined of the ito thin film of 120nm keeps preset duration in vacuum chamber by depositing thickness, in the present embodiment, the scope of preset duration is within 10 minutes.Easy understand, in step s 2, stops in vacuum chamber, carry argon gas and oxygen, and this makes the air pressure of vacuum chamber reduce in a certain degree.Further, in the step S1 and step S2 of the present embodiment, the air pressure range of vacuum chamber is at 1.0 ~ 7.0mT.
Verify that the present embodiment provides the resistance adjustment method of ito thin film in detail below in conjunction with Fig. 3 ~ Fig. 6: in the present embodiment, depict the different parameters graphic representation of the ito thin film under the condition of different preset duration (2,4,6,8 and 10 minutes).Particularly, Fig. 3 is the graphic representation of the square resistance parameter of ito thin film, and wherein, transverse axis represents the size of preset duration, and unit is minute (min); Vertical pivot represents the size of the square resistance Rs of ito thin film, and unit is the every side (Ω/sq) of ohm.Easily find out from Fig. 3, along with the increase of preset duration, the square resistance Rs of ito thin film first reduces rear increase, and when preset duration equals 6 minutes, the square resistance Rs of ito thin film is minimum.
Fig. 4 is the graphic representation of the uniformity parameters of the square resistance of ito thin film, and wherein, transverse axis represents the size of preset duration, and unit is minute (min); Vertical pivot represents the homogeneity of the square resistance Rs of ito thin film, and unit is per-cent (%), and the homogeneity of the square resistance Rs of the numerical value of homogeneity larger expression ito thin film is poorer.Easily find out from Fig. 4, along with the increase of preset duration, the numerical value of homogeneity reduces gradually, that is, the homogeneity of the square resistance Rs of ito thin film improves gradually, and when preset duration equals 6 minutes, the homogeneity of the square resistance Rs of ito thin film reaches best.
Fig. 5 is the graphic representation of the thickness parameter of ito thin film, and wherein, transverse axis represents the size of preset duration, and unit is minute (min); Vertical pivot represents the thickness of ito thin film, and unit is nanometer (nm).Easily find out from Fig. 5, along with the increase of preset duration, the thickness of ito thin film the position near 120nm among a small circle in change up and down, this makes the thickness of ito thin film be constant in certain limit of error, namely, after increasing step S2, the thickness of ito thin film is little with the variation in thickness of the ito thin film deposited in step S1, and therefore, the increase of step S2 can not have an impact to the thickness of ito thin film.
The graphic representation of Fig. 6 to be ito thin film to wavelength be film transmission rate parameter of 455nm, wherein, transverse axis represents the size of preset duration, and unit is minute (min); Vertical pivot represents the film transmission rate of ito thin film, and unit is per-cent (%).Easily find out from Fig. 6, along with the increase of preset duration, the film transmission rate of ito thin film carries out fluctuation up and down among a small circle in the position near 99%, namely, the film transmission rate of ito thin film remains unchanged, and therefore, the increase of step S2 can not have an impact to the film transmission rate of ito thin film.
As from the foregoing, the resistance adjustment method of the ito thin film that the present embodiment provides not only can not have an impact to the parameter of ito thin film, such as: thickness parameter and film transmission rate parameter, and the uniformity parameters of square resistance Rs that can improve ito thin film is minimum and reduce the square resistance Rs of ito thin film, due to the square resistance Rs of ito thin film and the resistance of ito thin film proportional, therefore, the resistance adjustment method of the ito thin film that the present embodiment provides can reduce the resistance of ito thin film and improve the resistance homogeneity of ito thin film, thus the processing quality of ito thin film can be improved, and then the electric property of LED component can be improved.
In addition, as from the foregoing, preferably, preset duration is 6 minutes, and this makes the homogeneity of the square resistance Rs of ito thin film square resistance Rs that is best and ito thin film minimum, thus can improve the processing quality of ito thin film to a great extent.
It should be noted that, in the present embodiment, for the ito thin film of the 120nm thickness deposited in step sl, regulated the resistance of the ito thin film of this thickness by setting preset duration, and preferably, preset duration is 6 minutes.But, the present invention is not limited thereto, in actual applications, also can be to the first thickness deposited in step S11 20nm ito thin film or to the second thickness deposited in step S12 be the ito thin film of 100nm separately through setting preset duration to regulate the resistance of the ito thin film of corresponding thickness, or, also to the ito thin film of any thickness deposited in step sl, the resistance of the ito thin film of corresponding thickness can be regulated by setting preset duration.
Also it should be noted that, in actual applications, preset duration can be set according to the deposition thickness of ito thin film and other parameters of vacuum chamber, to reduce the resistance of ito thin film and to improve the resistance homogeneity of ito thin film, minimum the highest with homogeneity with the resistance realizing ito thin film.Such as, preset other parameters of the thickness of ito thin film and vacuum chamber certain when, when the output rating larger (>300W) of radio-frequency power supply RF and direct supply DC in step sl, and oxygen content in vacuum chamber more time, the Rs of the square resistance of the ito thin film now deposited is larger, and the maximum value of the Rs of the square resistance of ito thin film is greater than 50% of minimum value, therefore, in this case, then longer preset duration should be set to reduce the square resistance Rs of ito thin film and to improve the homogeneity of square resistance Rs as far as possible.
It should be noted that in addition, in the step S2 of the present embodiment, because argon gas can not have an impact to ito thin film, therefore, also in step s 2, the air pressure of vacuum chamber can be changed by the airshed of adjustment argon gas, to regulate the resistance of ito thin film, this makes argon gas can change the distribution of a small amount of oxygen in vacuum chamber in vacuum chamber, thus can regulate the resistance of ito thin film further.Further, the scope of the airshed of argon gas is at 0 ~ 200sccm.
It should be noted that further, in step sl, also can adopt in prior art by changing the output rating of excitation power supply (radio-frequency power supply RF or direct supply DC), the gas flow ratio of argon gas and oxygen, the parameter of the deposition such as the air pressure of vacuum chamber and temperature ito thin film, reduce the square resistance Rs of ito thin film, therefore, after realizing the square resistance Rs of reduction ito thin film in step sl, the square resistance Rs of ito thin film can be reduced again further through step S2, thus the resistance of ito thin film can be reduced further, and then the processing quality of ito thin film can be improved.
In sum, the resistance adjustment method of ito thin film provided by the invention, it comprises step S1, delivery technology gas in vacuum chamber, and open excitation power supply, the plasma bombardment ITO target formed to excite process gas, and at the deposited on silicon ito thin film of workpiece to be machined; Step S2, stops delivery technology gas in vacuum chamber, and closes excitation power supply, and makes workpiece to be machined keep preset duration in vacuum chamber, regulates the resistance of ito thin film by changing preset duration.As from the foregoing, also step S2 is increased after depositing ito thin film in step sl, a small amount of process gas can be had due in vacuum chamber in step s 2, and the content of this process gas can change and affect ito thin film in preset duration, thus the resistance of ito thin film can be reduced and improve the resistance homogeneity of ito thin film, and then the processing quality of ito thin film can be improved; And, only by a small amount of process gas had in vacuum chamber in step s 2 to regulate the resistance of ito thin film, this with in prior art by compared with the parameter that changes the deposit film such as output rating of excitation power supply, input cost can be reduced, and make regulate process simple, thus can increase work efficiency, and then can increase economic efficiency.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, when not departing from principle of the present invention and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a resistance adjustment method for ito thin film, is characterized in that, at least comprise the following steps:
Step S1, delivery technology gas in vacuum chamber, and open excitation power supply, form plasma bombardment ITO target, with ito thin film described in the deposited on silicon of workpiece to be machined to excite described process gas;
Step S2, stopping carrying described process gas in described vacuum chamber, and closes described excitation power supply, and make described workpiece to be machined keep preset duration in described vacuum chamber, regulating the resistance of described ito thin film by changing described preset duration.
2. the resistance adjustment method of ito thin film according to claim 1, is characterized in that, the scope of described preset duration is within 10 minutes.
3. the resistance adjustment method of ito thin film according to claim 2, is characterized in that, described preset duration is 6 minutes.
4. the resistance adjustment method of ito thin film according to claim 1, is characterized in that, in described step S1 and described step S2, the air pressure range of described vacuum chamber is at 1.0 ~ 7.0mT.
5. the resistance adjustment method of ito thin film according to claim 1, it is characterized in that, described process gas comprises argon gas, and in described step S2, by the air pressure regulating the airshed of described argon gas to change described vacuum chamber, to regulate the resistance of described ito thin film.
6. the resistance adjustment method of ito thin film according to claim 5, is characterized in that, the scope of the airshed of described argon gas is at 0 ~ 200sccm.
7. the resistance adjustment method of ito thin film according to claim 1, is characterized in that, described step S1 comprises the following steps:
Step S11, in advance at the described ito thin film of deposited on silicon first thickness of described workpiece to be machined;
Step S12, the described ito thin film of the first thickness deposits the described ito thin film of the second thickness.
8. the resistance adjustment method of ito thin film according to claim 7, is characterized in that, in described step S1, described process gas comprises argon gas and oxygen, and described excitation power supply comprises radio-frequency power supply and/or direct supply.
9. the resistance adjustment method of ito thin film according to claim 8, it is characterized in that, parameter required in described step S11 comprises: the output rating of described radio-frequency power supply is 250W, the output rating of described direct supply is 130W, the airshed of described oxygen is 0.15sccm, the airshed of described argon gas is 35sccm, and the air pressure of described vacuum chamber is 1.0mT.
10. the resistance adjustment method of ito thin film according to claim 8, it is characterized in that, parameter required in described step S12 comprises: the output rating of described radio-frequency power supply is 0W, the output rating of described direct supply is 130W, the airshed of described oxygen is 0.2sccm, the airshed of described argon gas is 80sccm, and the air pressure of described vacuum chamber is 2.0mT.
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| CN105063557A (en) * | 2015-08-06 | 2015-11-18 | 国营第二二八厂 | Method for directional resistance value increase of ITO conducting film |
| TWI683017B (en) * | 2018-06-27 | 2020-01-21 | 日商洛克技研工業股份有限公司 | ITO film and transparent conductive film |
| CN111599918A (en) * | 2020-06-01 | 2020-08-28 | 西南科技大学 | all-ITO memristor and preparation method thereof |
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| CN111599918A (en) * | 2020-06-01 | 2020-08-28 | 西南科技大学 | all-ITO memristor and preparation method thereof |
| CN111599918B (en) * | 2020-06-01 | 2022-03-25 | 西南科技大学 | all-ITO memristor and preparation method thereof |
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| CN104651796B (en) | 2017-06-06 |
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Address after: 100176 No. 8, Wenchang Avenue, Daxing District economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |