CN104787719B - Microelectronic pressure sensor for mechanical system manufacture method - Google Patents
Microelectronic pressure sensor for mechanical system manufacture method Download PDFInfo
- Publication number
- CN104787719B CN104787719B CN201510107047.2A CN201510107047A CN104787719B CN 104787719 B CN104787719 B CN 104787719B CN 201510107047 A CN201510107047 A CN 201510107047A CN 104787719 B CN104787719 B CN 104787719B
- Authority
- CN
- China
- Prior art keywords
- manufacture method
- mechanical system
- pressure sensor
- sacrifice layer
- sige
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of manufacture method of microelectronic pressure sensor for mechanical system, including：Surface is carried out to silicon substrate flat；Formation of deposits sacrifice layer；Formation of deposits protective layer；It is lithographically formed contact hole；Carry out SiGe deposition；SiGe etches to form release aperture；Remove sacrifice layer.The manufacture method of electronic mechanical system pressure transducer of the present invention is avoided that sacrifice layer cracking causes SiGe deposition to be embedded into sacrifice layer fracture area, improves the performance and product yield of device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of microelectromechanical systems (MEMS, Micro-
Electro-Mechanical System) pressure transducer.
Background technology
MEMS (microelectromechanical systems) pressure transducer can use similar integrated circuit (IC) designing technique and manufacture work
Skill, carries out high accuracy, the production in enormous quantities of low cost, so as to being consumer electronics and industrial stokehold product with cheap cost
Convenience is opened using MEMS sensor in a large number, makes Stress control become easy to use and intelligent.
Traditional mechanical quantity pressure transducer is based on metal elastic gonosome stress deformation, by mechanical quantity elastic deformation to electricity
Conversion output, therefore it can not possibly be made as MEMS pressure sensor as IC is so small, and cost is also significantly larger than MEMS
Pressure transducer.Relative to traditional mechanical quantity sensor, MEMS pressure sensor smaller, maximum less than 1cm,
Cost performance is made to increase substantially relative to traditional " machinery " manufacturing technology.
At present, microelectronic pressure sensor for mechanical system manufacturing process is：Substrate flatness, contact hole etching, oxygen remove photoresist,
Sacrifice layer deposition and etching, SiGe (germanium silicon) depositions and etching, oxygen remove photoresist to form cavity.Typically using amorphous carbon as sacrificial
Forming cavity, before sacrifice layer deposition, the existing difference in height of substrate exists domestic animal layer, so there occurs after sacrifice layer deposition sacrificial
Domestic animal layer ftractures, and causes follow-up SiGe deposition to be embedded into sacrifice layer fracture area, affects the performance and yields of device.
Content of the invention
The technical problem to be solved in the present invention is to provide one kind and is avoided that sacrifice layer cracking to cause SiGe deposition to be embedded into sacrificial
The microelectronic pressure sensor for mechanical system manufacture method of domestic animal layer fracture area.
For solve above-mentioned technical problem, microelectronic pressure sensor for mechanical system manufacture method, including：
Step 1) to carry out surface to silicon substrate flat；
Step 2) in the position of pre-formed cavity, formation of deposits sacrifice layer；
Step 3) formation of deposits protective layer on sacrifice layer；
Step 4) it is lithographically formed contact hole；
Step 5) carry out SiGe deposition；
Step 6) SiGe etches to form release aperture；
Step 7) remove sacrifice layer.
Further optimize, step 2) and step 3) between increase step A) in N2Environment carries out thermal annealing.
Further optimizing, step A) temperature of thermal annealing is 350 DEG C -450 DEG C.
Further optimizing, step A) temperature of thermal annealing is 420 DEG C.
Further optimize, step 2) in sacrifice layer adopt amorphous carbon.
Further optimize, step 3) in protective layer using antireflection material make.
Further optimize, step 3) in protective layer adopt DARC (SiON+SiO2) or SRO (silicon rich oxide).
The sacrificial layer material of the manufacture method cavity of the present invention adopts amorphous carbon, the optional DARC of protective layer material or
SRO, the moisture in microelectronic pressure sensor for mechanical system manufacture process in the easy absorption air of agraphitic carbon, so without fixed
Type carbon laydown is completed, and preferably first passes through N2Annealing, annealing can produce two kinds of effects simultaneously to agraphitic carbon：1. reduce
Hydrogen in carbon film；2. carbon film stress reduces 30%～70%；Make agraphitic carbon combine closely with protective layer, there is no longer cracking and send out
Raw.SiGe deposition will not be embedded into sacrifice layer fracture area, can improve the performance of device and the yields of product.
Description of the drawings
The present invention is further detailed explanation with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is one embodiment of the invention schematic diagram one, and 1) its step display forms structure.
Fig. 2 is one embodiment of the invention schematic diagram two, and 2) its step display forms structure.
Fig. 3 is one embodiment of the invention schematic diagram three, and 3) its step display forms structure.
Fig. 4 is one embodiment of the invention schematic diagram four, and 4) its step display forms structure.
Fig. 5 is one embodiment of the invention schematic diagram five, and 5) its step display forms structure.
Fig. 6 is one embodiment of the invention schematic diagram six, and 6) its step display forms structure.
Fig. 7 is one embodiment of the invention schematic diagram seven, and 7) its step display forms structure.
Specific embodiment
One embodiment of microelectronic pressure sensor for mechanical system manufacture method of the present invention, including：
As shown in figure 1, step 1) to carry out surface to silicon substrate flat；
As shown in Fig. 2 step 2) in the position of pre-formed cavity, deposition amorphous carbon forms sacrifice layer, and in N2Environment
Thermal annealing is carried out, annealing temperature is 350 DEG C -450 DEG C, preferably 420 DEG C；
As shown in figure 3, step 3) DARC (SiON+SiO are adopted on sacrifice layer2) or SRO (silicon rich oxide) deposition shapes
Into protective layer；
As shown in figure 4, step 4) contact hole is lithographically formed to silicon substrate；
As shown in figure 5, step 5) SiGe is deposited on protective layer and silicon substrate (containing contact hole)；
As shown in fig. 6, step 6) SiGe etches to form release aperture, and release aperture will reach sacrifice through SiGe layer and protective layer
Layer；
As shown in fig. 7, step 7) sacrifice layer formation cavity is removed by oxygen.
The manufacture method cavity sacrificial layer material of the present invention adopts amorphous carbon, protective layer material optional DARC or SRO,
Moisture in microelectronic pressure sensor for mechanical system manufacture process in the easy absorption air of agraphitic carbon, so in agraphitic carbon
Deposition is completed, and preferably first passes through N2Annealing, annealing can produce two kinds of effects simultaneously to agraphitic carbon：1. carbon film is reduced
In hydrogen；2. carbon film stress reduces 30%～70%；Make agraphitic carbon combine closely with protective layer, there is no longer cracking and occur,
SiGe deposition will not be embedded into sacrifice layer fracture area.
The present invention has been described in detail above by specific embodiment and embodiment, but these not constitute right
The restriction of the present invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Enter, these also should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of manufacture method of microelectronic pressure sensor for mechanical system, is characterized in that, including：
Step 1) to carry out surface to silicon substrate flat；
Step 2) in the position of pre-formed cavity, formation of deposits sacrifice layer, sacrifice layer adopt amorphous carbon；
Step 3) thermal annealing is carried out in N2 environment；
Step 4) formation of deposits protective layer on sacrifice layer；
Step 5) it is lithographically formed contact hole；
Step 6) carry out SiGe deposition；
Step 7) SiGe etches to form release aperture；
Step 8) remove sacrifice layer.
2. the manufacture method of microelectronic pressure sensor for mechanical system as claimed in claim 1, is characterized in that：Step 3) thermal annealing
Temperature be 350 DEG C -450 DEG C.
3. the manufacture method of microelectronic pressure sensor for mechanical system as claimed in claim 2, is characterized in that：Step 3) thermal annealing
Temperature be 420 DEG C.
4. the manufacture method of microelectronic pressure sensor for mechanical system as claimed in claim 1, is characterized in that：Step 4) middle protection
Layer is made using antireflection material.
5. the manufacture method of microelectronic pressure sensor for mechanical system as claimed in claim 4, is characterized in that：Step 4) middle protection
Layer adopts DARC or SRO silicon rich oxides；Wherein, DARC is that SiON adds SiO2；SRO is silicon rich oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510107047.2A CN104787719B (en) | 2015-03-11 | 2015-03-11 | Microelectronic pressure sensor for mechanical system manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510107047.2A CN104787719B (en) | 2015-03-11 | 2015-03-11 | Microelectronic pressure sensor for mechanical system manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104787719A CN104787719A (en) | 2015-07-22 |
| CN104787719B true CN104787719B (en) | 2017-03-15 |
Family
ID=53552975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510107047.2A Active CN104787719B (en) | 2015-03-11 | 2015-03-11 | Microelectronic pressure sensor for mechanical system manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104787719B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106698327B (en) * | 2015-11-12 | 2018-08-24 | 上海丽恒光微电子科技有限公司 | The preparation method of pressure sensor |
| CN106409673B (en) * | 2016-10-10 | 2019-10-25 | 上海华虹宏力半导体制造有限公司 | The production method of the forming method and mems device of amorphous carbon-film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174024A (en) * | 2006-08-25 | 2008-05-07 | 视频有限公司 | Micro devices having anti-stiction materials |
| CN102353459A (en) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102915953A (en) * | 2011-08-05 | 2013-02-06 | 中芯国际集成电路制造(上海)有限公司 | Amorphous carbon film processing method and opening forming method |
| CN103011052A (en) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof |
| CN104155035A (en) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Pressure sensor forming method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09257618A (en) * | 1996-03-26 | 1997-10-03 | Toyota Central Res & Dev Lab Inc | Electro-static capacity type pressure sensor and production thereof |
| JP2005028504A (en) * | 2003-07-11 | 2005-02-03 | Sony Corp | Micro electromechanical system (mems) element and method for manufacturing the same |
-
2015
- 2015-03-11 CN CN201510107047.2A patent/CN104787719B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174024A (en) * | 2006-08-25 | 2008-05-07 | 视频有限公司 | Micro devices having anti-stiction materials |
| CN102353459A (en) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102915953A (en) * | 2011-08-05 | 2013-02-06 | 中芯国际集成电路制造(上海)有限公司 | Amorphous carbon film processing method and opening forming method |
| CN103011052A (en) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof |
| CN104155035A (en) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Pressure sensor forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104787719A (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104692319B (en) | Manufacture method to the insensitive MEMS chip of encapsulation stress and MEMS chip thereof | |
| CN104787719B (en) | Microelectronic pressure sensor for mechanical system manufacture method | |
| CN103145091B (en) | Method for preparing electrostatic actuation structure with staggered teeth | |
| WO2017041339A1 (en) | Method for preparing substrate | |
| CN105366635A (en) | Formation method of motion sensor | |
| CN103991836A (en) | Micro electro mechanical system sensor and manufacturing method thereof | |
| US10077188B2 (en) | Manufacturing method of MEMS chip | |
| CN102079503A (en) | Etching method of silicon substrate forming MEMS (Micro Electro Mechanical System) device | |
| CN104505335A (en) | Manufacture method of controllable silicon nanowire array within two-dimensional plane | |
| JP2012040619A (en) | Capacity type mems sensor and method of manufacturing the same | |
| CN101913550B (en) | The manufacture method of microbridge structure of micro-electromechanical system | |
| WO2009014337A3 (en) | Method of manufacturing crystalline semiconductor thin film | |
| CN110510572A (en) | A kind of capacitance pressure transducer, and preparation method thereof | |
| CN102751179B (en) | A kind of method preparing graphene device | |
| CN103515193B (en) | The manufacture method of delicate pattern of semi-conductor device | |
| CN101959117B (en) | Manufacturing method of microphone | |
| CN101567313A (en) | Grid manufacturing method | |
| CN101800172B (en) | A kind of manufacture method of self-aligned polysilicon floating gate | |
| CN102867742B (en) | Plasma etching method for eliminating morphologic deformation | |
| CN107527802A (en) | Groove type double-layer grid MOS film build methods | |
| CN101962165A (en) | Microbridge structure of micro-electromechanical system and manufacturing method thereof | |
| CN102543713B (en) | Method for etching oxide silicon grid compensating isolation region | |
| JP2007322575A (en) | Display device | |
| CN103346076B (en) | Improve the method for grid oxygen active area defect | |
| CN101118840A (en) | Manufacturing method of power semi-conductor discrete device first floor photolithography para-position making |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |