CN104764547B - A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method - Google Patents
A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method Download PDFInfo
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Abstract
A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method, sensor chip includes the thin film being provided with the middle part of substrate, four embossment islands are distributed along thin film top edge, and be connected with substrate by four embossment roots, four varistor bars are arranged in the upper surface of embossment root, varistor bar is interconnected to semi-loop Wheatstone bridge by metal lead wire, and four projections are uniformly distributed along thin film lower edge, and are connected with substrate；Four are separated with distance between mass and projection, projection is connected on thin film, and preparation method is the soi wafer cleaned using HF solution, and high-temperature oxydation is carried out to soi wafer, make varistor bar, obtain ohmic contact regions, then make metal lead wire and pad；Photoetching is carried out again, forms four embossment islands with four embossment roots and the back cavity structure layer of sensor；Finally backside of substrate is bonded with antioverloading glass, the present invention have sensitivity height, the good linearity, high precision, good dynamic property the features such as.
Description
Technical field
The present invention relates to MEMS piezoresistive micro-pressure sensor technical field, and in particular to a kind of sculptured island membrane stress is concentrated
Structure micro-pressure sensor chip and preparation method.
Background technology
With the development of MEMS technology, MEMS micro-pressure sensors have been widely used in wind tunnel test, life
The fields such as thing doctor's electricity, especially in aerospace field, the volume, weight to sensor has strict demand, and requires to sense utensil
There are certain sensitivity and natural frequency.MEMS sensor is undoubtedly very good selection.It is for example in aerospace field, right
Highly monitor significant in aircraft depth high-altitude, and pressure has certain proportionate relationship with height, thus passes through pressure
Sensor can reflect the change of aircraft altitude.Aircraft reaches predetermined altitude from transmitting, and atmospheric pressure is from about
100kPa changes to hundreds of Pa, thus sensor is in addition to the minute-pressure ability that can detect hundreds of Pa, it is necessary to high overload energy
Power, so which will not be damaged because of atmospheric pressure under surface air effect.And for example in bio-instruments field, in order to accurate
Carry out liquid relief work, need critically to detect the change of liquid level, can by detect liquid height produce minute-pressure change come
The change of reaction liquid level, and the corresponding pressure limit of grade liquid level is only in the range of hundreds of Pa.
The pressure transducer of different sensitivity principles has different pluses and minuses.Such as piezoelectric pressure indicator is sensitive by which
The restriction of principle, it is impossible to measure static pressure, and the charge signal for exporting needs follow-up complicated auxiliary circuit to be processed；Electricity
Appearance formula pressure transducer has sensitivity height, temperature drift little, and the advantages of low in energy consumption, but input impedance is big, easily by the shadow of parasitic capacitance
Ring, it is more sensitive for the interference of surrounding；Resonance type pressure sensor has preferable sensitivity and relatively low temperature drift, but
Compared with piezoresistive pressure sensor, its processing technology is more complicated, and yield rate is relatively low；Though piezoresistive pressure sensor is easily
Temperature influence, but its measurement range is wide, measurable static and Dynamic Signal, and high precision, dynamic response are good, post processing circuitry letter
It is single.
The key structure of piezoresistive pressure sensor is membrane structure, and what four varistor bars were arranged in film edge should
Power concentrated position, it is electrical signal to form favour stone full-bridge by stress transmission.With thinning, the sensor pair of film structure thickness
The sensitivity of pressure can be improved, but the non-linear of sensor can also increase, so as to increase the difficulty of signal processing.
The current MEMS micro-pressure sensors of China are mainly also rested in kPa levels, it is impossible to meet space industry micro- to Pa levels
The requirement of pressure measurement, can not adapt to such as to the accurate minute-pressure in deep high-altitude minute-pressure accurate measuring technique, biomedical devices
The demand in the fields such as measurement.Therefore, the ultralow micro pressure measuring of Pa levels how is realized, sensitivity and Frequency Response, sensitivity is solved
Contradiction between nonlinearity, it is ensured that the high sensitivity of micro-pressure sensor, high frequency sound characteristic and exceed loading capability, is to ensure
Micro-pressure sensor carries out reliability, accurate measurement and the key technical problems urgently broken through.
The content of the invention
In order to overcome the shortcoming of above-mentioned prior art, it is an object of the invention to provide a kind of sculptured island membrane stress is concentrated
Structure micro-pressure sensor chip and preparation method, can measure to Pa level minute-pressures, good, smart with sensitivity height, the linearity
The features such as degree is high, dynamic property is good, while the high overload equivalent to full scale several times can be born, the construction manufacturing method letter
Single, reliability is high, it is easy to mass production.
To achieve these goals, the technical solution used in the present invention is as follows：
A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip, including the thin film 2 being provided with the middle part of substrate 1, four
Individual embossment island 3-1,3-2,3-3,3-4 is uniformly distributed along 2 top edge of thin film, four embossment islands 3-1,3-2,3-3,3-4's
Thickness is the 5%～90% of 2 thickness of thin film；Four embossment root 4-1,4-2,4-3,4-4 by four embossment island 3-1,3-2,
3-3,3-4 are connected with substrate 1, the upper surface of four embossments root 4-1,4-2,4-3,4-4 and four embossment island 3-1,3-2,
The upper surface flush of 3-3,3-4；Four varistors bar 7-1,7-2,7-3,7-4 are evenly arranged in by stress distribution law respectively
The upper surface of four embossments root 4-1,4-2,4-3,4-4, and the effective length direction of varistor bar 7-1,7-2,7-3,7-4
Along the crystal orientation that piezoresistance coefficient is maximum；Pad 9 is arranged in 1 upper surface of substrate；Metal lead wire 8 is by four varistors bar 7-1,7-
2nd, 7-3,7-4 are interconnected to semi-loop Wheatstone bridge, and the outfan of electric bridge is connected with pad 9；
Four projections 6-1,6-2,6-3,6-4 are uniformly distributed along 2 lower edge of thin film, and are connected with substrate 1；Four quality
The axis of symmetry of block 5-1,5-2,5-3,5-4 and projection 6-1,6-2,6-3,6-4 figure coincide and with projection 6-1,6-2,6-3,
6-4 is separated with distance between along symmetrical direction of principal axis, and projection 6-1,6-2,6-3,6-4 are connected on thin film 2；
1 back side of substrate is bonded together with antioverloading glass 10.
The film flakiness ratio of described thin film 2 is 70～700：1.
Making on described antioverloading glass 10 has ledge structure；Ledge structure is by top surface 13, bottom surface 11 and between the two
The step surface 12 being provided with is constituted, and bottom surface 11 ensures sensor in normal work feelings with the design of the depth and size of step surface 12
Under condition, do not interfere between mass 5-1,5-2,5-3,5-4 and top surface 13, step surface 12, bottom surface 11, in overload
Under, step surface 12 mass 5-1,5-2,5-3,5-4 can be carried out with bottom surface 11 it is spacing, when substrate 1 and antioverloading glass 10
Between the cavity that formed when being vacuum, then realize absolute micro pressure measuring；When antioverloading glass structure 10 carries hole, then phase is realized
To micro pressure measuring.
Described thin film 2 selects square thin film, four masses 5-1,5-2,5-3,5-4 to tie using hollow wedge
Structure.
Described varistor bar 7-1,7-3 is four fold or many folding resistor stripe structures；Varistor bar 7-2,7-4 are single
Or many folding resistor stripe structures, varistor bar 7-1,7-3 is identical with the initial total resistance value of 7-2,7-4, and its effective length
Degree direction is each along the maximum crystal orientation of piezoresistance coefficient.
The preparation method of described a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip, including following step
Suddenly：
1) soi wafer cleaned using HF solution, soi wafer are N-type (100) crystal face；The soi wafer divides from top to bottom
For three layers, it is respectively：Upper strata monocrystal silicon 14, buried layer of silicon dioxide 15 and underlying monocrystalline silicon 16；
2) high-temperature oxydation is carried out to soi wafer, 14 front of monocrystal silicon forms silicon dioxide layer 17 on upper strata, is then pressed with P-
Quick resistance version, makes varistor region by lithography to the silicon dioxide layer 17 that monocrystal silicon 14 surface in upper strata is formed, and removes varistor
The silicon dioxide layer 17 in region, exposes upper strata monocrystal silicon 14, to the varistor region injection boron at the top of upper strata monocrystal silicon 14
Ion, obtains varistor bar 7-1,7-2,7-3,7-4；
3) using P+ Ohmic contact versions, after removing the silicon dioxide layer 17 of part, the 14 photomask surface shape of monocrystal silicon on upper strata
Into boron ion heavily doped region 18, obtain the p-type heavily doped silicon of low-resistance as ohmic contact regions, it is ensured that varistor bar 7-1,7-2,
The Ohm connection of 7-3,7-4；
4) in ohmic contact regions, using metal lead wire version, make the shape of metal lead wire by lithography, splash-proofing sputtering metal layer or other
Composite construction metal level, forms the metal lead wire 8 and pad 9 of sensor chip；
5) version being etched using front, photoetching being carried out to 14 front of upper strata monocrystal silicon, 2 front of thin film is removed into respective depth
Silicon, forms four embossment island 3-1,3-2,3-3,3-4 and four embossments root 4-1,4-2,4-3,4-4；
6) using back of the body chamber etching version, photoetching is carried out to 16 back side of underlying monocrystalline silicon, using silicon dioxide layer 15 as etch-stop
Only layer removes the silicon materials in back of the body chamber, forms the back cavity structure layer of sensor；
7) 1 back side of substrate is bonded with 10 top surface 13 of antioverloading glass.
The step 5), step 6) silicon materials are removed using deep reaction ion etching, so as to ensure that etching edge
Perpendicularity and depth-to-width ratio.
The present invention is using by embossment island 3-1,3-2,3-3,3-4 and embossment root 4-1,4-2,4-3,4-4 and mass
5-1,5-2,5-3,5-4 and projection 6-1,6-2,6-3,6-4 constitute sculptured island membrane stress concentrating structure and pass as MEMS minute-pressures
The chip structure of sensor, and be bonded with antioverloading glass 10 and make micro-pressure sensor chip, can bear what is brought by atmospheric pressure
Equivalent to the high overload of hundred times full scale.The distributing position of four varistors bar 7-1,7-2,7-3,7-4 is according to limited
What first result of calculation determined, carried by taking full advantage of the stress concentration effect produced by sculptured island membrane stress concentrating structure
The output voltage of high Wheatstone bridge, improves the sensitivity of sensor.Mass 5-1,5-2,5-3,5-4 and projection 6-1,
6-2,6-3,6-4 improve the rigidity of thin film 2.Therefore, it can effectively improve the natural frequency of sensor chip, and ensure sensing
The nonlinear indicator of device.
Compared with prior art, inventive sensor chip is rational in infrastructure, can anti high overload, while can but also with height
The features such as by property, high accuracy, high linearity, high dynamic characteristic, and it is easy to processing, low cost, it is advantageously implemented mass production.
Description of the drawings
Positive axonometric schematics of the Fig. 1 (a) for inventive sensor chip；Fig. 1 (b) is location A enlarged drawing in Fig. 1 (a)；
Fig. 1 (c) is B location enlarged drawing in Fig. 1 (a).
Fig. 2 is inventive sensor chip front side schematic diagram.
Fig. 3 is that inventive sensor chip carries on the back chamber axonometric schematic diagram.
Antioverloading glass 10 axonometric schematic diagrams of the Fig. 4 for inventive sensor chip.
10 axonometric schematic diagram of antioverloading glass with holes of Fig. 5 inventive sensor chips.
Antioverloading glass 10 front schematic views of the Fig. 6 (a) for inventive sensor chip；Fig. 6 (b) is C-C in Fig. 6 (a)
Cross-sectional schematic at section.
With holes antioverloading glass 10 front schematic views of the Fig. 7 (a) for inventive sensor chip；7 (b) is D- in Fig. 7 (a)
Cross-sectional schematic at D sections.
Fig. 8 is the equivalent stress figure of present invention film surface under minute-pressure effect.
Fig. 9 is first natural frequency bending vibation mode picture of the present invention.
Figure 10 is inventive sensor chip preparation method schematic diagram；Figure 10 (a) is tied for SOI pieces used in preparation technology
Structure schematic diagram；Figure 10 (b) makes schematic diagram for varistor bar；Figure 10 (c) makes schematic diagram for ohmic contact regions；Figure 10
D () makes schematic diagram for metal lead wire；Figure 10 (e) etches schematic diagram for front embossment structure；Figure 10 (f) illustrates to carry on the back chamber etching
Figure；Figure 10 (g) is bonded schematic diagram for antioverloading sheet glass.
Cross-sectional schematic of Figure 11 inventive sensors chip when without stress state, in Fig. 2 at section B-B.
Cross-sectional schematic of Figure 12 inventive sensors chip in normal operating conditions, in Fig. 2 at section B-B.
Cross-sectional schematic of Figure 13 inventive sensors chip in overload, in Fig. 2 at section B-B.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in detail.
With reference to Fig. 1 (a), a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip, including it is provided with the middle part of substrate 1
Thin film 2, with reference to Fig. 1 (a), Fig. 1 (b), Fig. 1 (c), Fig. 2, four embossment island 3-1,3-2,3-3,3-4 are along 2 upper edge of thin film
Edge is uniformly distributed, and the thickness of four embossment islands 3-1,3-2,3-3,3-4 is the 5%～90% of 2 thickness of thin film；Four embossment roots
Four embossment island 3-1,3-2,3-3,3-4 are connected by portion 4-1,4-2,4-3,4-4 with substrate 1, four embossments root 4-1,4-
2nd, the upper surface flush of the upper surface of 4-3,4-4 and four embossment islands 3-1,3-2,3-3,3-4；Four varistors bar 7-1,7-
2nd, 7-3,7-4 are evenly arranged in the upper surface of four embossments root 4-1,4-2,4-3,4-4 respectively by stress distribution law, and are pressed
The effective length direction of quick resistor stripe 7-1,7-2,7-3,7-4 is along the maximum crystal orientation of piezoresistance coefficient；Pad 9 is arranged in substrate 1
Upper surface；Four varistors bar 7-1,7-2,7-3,7-4 are interconnected to semi-loop Wheatstone bridge by metal lead wire 8, and
And the outfan of electric bridge is connected with pad 9；
With reference to Fig. 3, four projections 6-1,6-2,6-3,6-4 are uniformly distributed along 2 lower edge of thin film, and are connected with substrate 1；
The axis of symmetry of four masses 5-1,5-2,5-3,5-4 and projection 6-1,6-2,6-3,6-4 figure coincide and with projection 6-1,
6-2,6-3,6-4 are separated with distance between along symmetrical direction of principal axis, and projection 6-1,6-2,6-3,6-4 are connected on thin film 2；
1 back side of substrate is bonded together with antioverloading glass 10.
The film flakiness ratio of described thin film 2 is 70～700：1.
As shown in Fig. 4, Fig. 5, Fig. 6 (a), Fig. 6 (b), Fig. 7 (a), Fig. 7 (b), making on described antioverloading glass 10 has
Ledge structure；Ledge structure is made up of top surface 13, bottom surface 11 and the step surface 12 being provided between the two, bottom surface 11 and step surface 12
Depth and the design of size ensure sensor in normal operating conditions, mass 5-1,5-2,5-3,5-4 and top surface 13,
Do not interfere between step surface 12, bottom surface 11, under overload, step surface 12 can be by mass 5-1,5- with bottom surface 11
2nd, 5-3,5-4 carry out it is spacing, when the cavity formed between substrate 1 and antioverloading glass 10 be vacuum when, then realize absolute minute-pressure
Measurement；When antioverloading glass structure 10 carries hole, then relative micro pressure measuring is realized.
With range as 500Pa, chip longest edge be smaller in size than as a example by 4000 μm, its physical dimension is as follows：Embossment root 4-
1st, the width of 4-2,4-3,4-4 is 160 μm, and length is 200 μm, embossment island 3-1,3-2,3-3,3-4 and embossment root 4-1,4-
2nd, the height of 4-3,4-4 is 5um；2 thickness of thin film is 5 μm, and the length and width of thin film 2 are 2500 μm；1 thickness of substrate is 200 μm,
The threshold value substrate 1 of projection 6-1,6-2,6-3,6-4 is apart from for 135 μm；The upper lie farthest away of mass 5-1,5-2,5-3,5-4
Two end points distance be 700 μm, the spacing between mass 5-1,5-2,5-3,5-4 and projection 6-1,6-2,6-3,6-4
For 35 μm, in the case where the effect of 500Pa load is born, film surface equivalent stress situation is as shown in Figure 8, it is seen that arrangement varistor bar
Equivalent stress at 7-1,7-2,7-3,7-4 is about 53MPa, about 400 microstrains, so that sensor has highest sensitive
The linear convergent rate of degree, sensor first natural frequency and bending vibation mode picture are as shown in figure 9, one stage natural frequency is
17.74kHz。
With reference to shown in Figure 10, the preparation side of described a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip
Method, comprises the following steps：
1) with reference to Figure 10 (a), the soi wafer cleaned using HF solution, soi wafer are N-type (100) crystal face；The SOI silicon
Piece is divided into three layers from top to bottom, is respectively：Upper strata monocrystal silicon 14, buried layer of silicon dioxide 15 and underlying monocrystalline silicon 16；
2) with reference to Figure 10 (b), high-temperature oxydation is carried out at 900 DEG C -1200 DEG C, 14 surface of monocrystal silicon forms dioxy on upper strata
SiClx layer 17, then with P- varistor versions, the 17 photoetching varistor of silicon dioxide layer formed by monocrystal silicon 14 surface in upper strata
Region, removes the silicon dioxide layer 17 in varistor region, exposes upper strata monocrystal silicon 14, to the pressure at the top of upper strata monocrystal silicon 14
Quick resistance region injects boron ion, obtains varistor bar 7-1,7-2,7-3,7-4；
3) with reference to Figure 10 (c), using P+ Ohmic contact versions, after removing the silicon dioxide layer 17 of part, in upper strata monocrystal silicon
14 photomask surfaces form boron ion heavily doped region 18, and boron ion implantation dosage when carrying out boron ion heavy doping is 1.5 ×
1016cm-2, the p-type heavily doped silicon of low-resistance is obtained as ohmic contact regions, it is ensured that the Europe of varistor bar 7-1,7-2,7-3,7-4
Nurse connects；
4) with reference to Figure 10 (d), in ohmic contact regions, using metal lead wire version, the shape of metal lead wire is lithographically formed, is sputtered
The metal level of Au metal levels or other structures, forms the metal lead wire 8 and pad 9 of sensor chip；
5) with reference to Figure 10 (e), etch version using front, photoetching carried out to 14 front of upper strata monocrystal silicon, using it is deep react from
Son etching 2 upper surface of thin film, etching formed four embossment island 3-1,3-2,3-3,3-4 and four embossment root 4-1,4-2,4-3,
4-4；
6) with reference to Figure 10 (f), using back of the body chamber etching version, photoetching is carried out to 16 back side of underlying monocrystalline silicon, is to ensure projection 6-
1st, 6-2,6-3,6-4 and mass 5-1,5-2,5-3,5-4 edge perpendicularity and depth-to-width ratio, are formed using deep reaction ion etching
Positioned at the structure of 2 bottom of thin film, the silicon materials in back of the body chamber are removed using silicon dioxide layer 15 as etching stop layer, form sensor
Back cavity structure layer；
7) with reference to Figure 10 (g), finally, 1 back side of substrate is bonded with the top surface 13 of antioverloading glass 10.
Operation principle of the present invention is：
Figure 11 is the cross section structure relation schematic diagram of present invention when without stress state.With reference to Figure 12, sensor is in minute-pressure
P1Under effect, thin film 2 starts to recessed, and embossment root 4-1,4-2,4-3,4-4 upper surface makes stress carry out secondary concentration, so as to
The stress variation of four varistors bar 7-1,7-2,7-3,7-4 is increased, is conducive to improving the sensitivity of sensor, while
Mass 5-1,5-2,5-3,5-4 and projection 6-1,6-2,6-3,6-4 increase the overall rigidity of structure, hence it is evident that improve sensing
The linearity of device, and be conducive to improving the dynamic response characteristic of sensor.
With reference to Figure 13, when sensor is encapsulated as absolute pressure sensor, atmospheric pressure P to be born0Effect, bearing air
The effect of pressure, for the sensor of 500Pa ranges, is subjected to the high overload pressure equivalent to 200 times of full scales, quality
Block 5-1,5-2,5-3,5-4 have been pressed on antioverloading glass 10, serve the effect of position limitation protection, prevent thin film 2 because of amount of deflection
It is excessive and destroy, during overload protection, the step that the step surface 12 of antioverloading glass 10, bottom surface 11 are formed reduce mass 5-1,
Contact area between 5-2,5-3,5-4 and antioverloading glass 10, so as to solve the anti-suction of mass 5-1,5-2,5-3,5-4
Attached problem, when chip proceeds to mode of operation by overload, mass 5-1,5-2,5-3,5-4 smoothly can upspring, and not
Can be adsorbed by bottom surface 10, so as to ensure that sensor stabilization reliably works.
The sculptured island membrane stress concentrating structure micro-pressure sensor chip of the present invention, relative to traditional flat film of c-type and E types
Island membrane structure, due to four masses 5-1,5-2,5-3,5-4 and four projections 6-1,6-2,6-3,6-4, to improve thin film 2 whole
Body rigidity.Embossment root structure 4-1,4-2,4-3,4-4 upper surface makes stress concentrate again, and the anti-mistake with ledge structure
Carry glass 10 and efficiently solve anti-absorption problem of the sensor under overload.Therefore, the structure has good linearity, sensitivity
It is high, the features such as Dynamic response characteristic is good, overload capacity is strong.
The main performance technical specification of the present invention is as follows：
1st, measurement range：0～500Pa
2nd, certainty of measurement：Better than 0.5%FS
3rd, sensitivity：≥20mV/V
4th, operating temperature：- 50 DEG C～120 DEG C
5th, first natural frequency：≥17kHz
6th, overload capacity：100kPa
7th, chip profile：3.3mm×3.3mm
One embodiment of the present invention is the foregoing is only, is not all of or unique embodiment, this area is common
Any equivalent conversion that technical staff is taken to technical solution of the present invention by reading description of the invention, is the present invention
Claim covered.
Claims (6)
1. a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip, including the thin film (2) being provided with the middle part of substrate (1),
It is characterized in that：Four embossment islands (3-1,3-2,3-3,3-4) are uniformly distributed along thin film (2) top edge, four embossment islands
The thickness of (3-1,3-2,3-3,3-4) is the 5%～90% of thin film (2) thickness；Four embossments root (4-1,4-2,4-3,4-
4) four embossment islands (3-1,3-2,3-3,3-4) are connected with substrate (1), four embossment roots (4-1,4-2,4-3,4-4)
Upper surface and four embossment islands (3-1,3-2,3-3,3-4) upper surface flush；Four varistor bars (7-1,7-2,7-3,
The upper surface of four embossment roots (4-1,4-2,4-3,4-4) is evenly arranged in respectively by stress distribution law 7-4), and it is pressure-sensitive
The effective length direction of resistor stripe (7-1,7-2,7-3,7-4) is along the maximum crystal orientation of piezoresistance coefficient；Pad (9) is arranged in substrate
(1) upper surface；Four varistor bars (7-1,7-2,7-3,7-4) are interconnected to semi-loop favour stone by metal lead wire (8)
Electric bridge, and the outfan of electric bridge is connected with pad (9)；
Four projections (6-1,6-2,6-3,6-4) are uniformly distributed along thin film (2) lower edge, and are connected with substrate (1)；Four matter
The axis of symmetry of gauge block (5-1,5-2,5-3,5-4) and projection (6-1,6-2,6-3,6-4) figure coincide and with projection (6-1,6-
2nd, 6-3,6-4) distance is separated between along symmetrical direction of principal axis, projection (6-1,6-2,6-3,6-4) is connected on thin film (2)；
Substrate (1) back side is bonded together with antioverloading glass (10)；
Making on described antioverloading glass (10) has ledge structure；Ledge structure is by top surface (13), bottom surface (11) and both it
Between step surface (12) composition that is provided with, the design of the depth and size of bottom surface (11) and step surface (12) ensures sensor just
Often under working condition, mass (5-1,5-2,5-3,5-4) and top surface (13), step surface (12), bottom surface do not occur between (11)
Interfere, under overload, step surface (12) mass (5-1,5-2,5-3,5-4) can be carried out with bottom surface (11) it is spacing,
When the cavity formed between substrate (1) and antioverloading glass (10) is vacuum, then absolute micro pressure measuring is realized；When antioverloading glass
When glass (10) is with hole, then relative micro pressure measuring is realized.
2. a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip according to claim 1, it is characterised in that：
The film flakiness ratio of described thin film (2) is 70～700：1.
3. a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip according to claim 1, it is characterised in that：
Described thin film (2) is from square thin film.
4. a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip according to claim 1, it is characterised in that：
First varistor article (7-1), the 3rd varistor article (7-3) are many folding resistor stripe structures；Second varistor bar (7-2),
4th varistor article (7-4) is single or many folding resistor stripe structures, the first varistor article (7-1), the 3rd varistor
Article (7-3) is identical with the initial total resistance value of the second varistor article (7-2), the 4th varistor article (7-4), and which is effective
Length direction is each along the maximum crystal orientation of piezoresistance coefficient.
5. the preparation method of a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip according to claim 1,
Characterized in that, comprising the following steps：
1) soi wafer cleaned using HF solution, soi wafer are N-type (100) crystal face；The soi wafer is divided into three from top to bottom
Layer, be respectively：Upper strata monocrystal silicon (14), the first silicon dioxide layer (15) and underlying monocrystalline silicon (16)；
2) high-temperature oxydation is carried out to soi wafer, monocrystal silicon (14) front forms the second silicon dioxide layer (17), Ran Houyong on upper strata
P- varistor versions, make varistor region by lithography to the second silicon dioxide layer (17) that upper strata monocrystal silicon (14) surface is formed,
Second silicon dioxide layer (17) in varistor region is removed, upper strata monocrystal silicon (14) is exposed, upper strata monocrystal silicon (14) is pushed up
The varistor region injection boron ion in portion, obtains varistor bar (7-1,7-2,7-3,7-4)；
3) using P+ Ohmic contact versions, after removing second silicon dioxide layer (17) of part, monocrystal silicon (14) the surface light on upper strata
Form boron ion heavily doped region (18) quarter, the p-type heavily doped silicon of low-resistance is obtained as ohmic contact regions, it is ensured that varistor bar
The Ohm connection of (7-1,7-2,7-3,7-4)；
4) in ohmic contact regions, using metal lead wire version, make the shape of metal lead wire by lithography, splash-proofing sputtering metal layer forms sensor
The metal lead wire (8) and pad (9) of chip；
5) version being etched using front, photoetching being carried out to upper strata monocrystal silicon (14) front, thin film (2) front is removed into respective depth
Silicon, forms four embossment islands (3-1,3-2,3-3,3-4) and four embossment roots (4-1,4-2,4-3,4-4)；
6) using back of the body chamber etching version, photoetching is carried out to underlying monocrystalline silicon (16) back side, using the first silicon dioxide layer (15) as quarter
Erosion stop-layer removes the silicon materials in back of the body chamber, forms the back cavity structure layer of sensor；
7) substrate (1) back side is bonded with antioverloading glass (10) top surface (13).
6. the preparation method of a kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip according to claim 5,
It is characterized in that：The step 5), step 6) using deep reaction ion etching remove silicon materials, so as to ensure that etching edge
Perpendicularity and depth-to-width ratio.
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