CN112284605B - Cross island beam membrane high-temperature micro-pressure sensor chip and preparation method thereof - Google Patents
Cross island beam membrane high-temperature micro-pressure sensor chip and preparation method thereof Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0618—Overload protection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
- G01L19/0654—Protection against aggressive medium in general against moisture or humidity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0681—Protection against excessive heat
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A cross island beam film high-temperature micro-pressure sensor chip and a preparation method thereof, the sensor chip comprises a film in the middle of a substrate, a cross beam with a narrowed root part is processed on the film, the root part of the beam is connected with the substrate, pressure-sensitive relief resistor strips are arranged at the root part of the beam, four pressure-sensitive relief resistor strips are connected into a half-open loop Wheatstone bridge through five P-type heavily-doped silicon relief blocks, and a cross mass block is arranged in the middle of the lower surface of the film; the preparation method comprises the steps of doping and etching an SOI silicon wafer into a piezoresistor relief strip and a P-type heavily-doped silicon relief block, then manufacturing a root narrowed cross beam, bonding the silicon wafer and the front surface of glass in vacuum, and finally manufacturing a back cavity cross mass block of the sensor; the introduction of the root narrowed cross beam and the cross mass block improves the integral rigidity, concentrates the stress, has the characteristics of high temperature resistance, high linearity, high sensitivity, high dynamic and the like, and is convenient to process and low in cost.
Description
Technical Field
The invention relates to the technical field of MEMS piezoresistive micro-pressure sensors, in particular to a cross island beam film high-temperature micro-pressure sensor chip and a preparation method thereof.
Background
Micro-electromechanical systems (MEMS) technology has the characteristics of small size, light weight, low power consumption, high reliability, excellent performance, and the like. Among them, the micro pressure sensor is the most developed type in the MEMS device, and is widely used in the industries of petrochemical industry, aerospace, energy and power, transportation, metallurgy, machine manufacturing, medical care and health, and the like. The development of miniature pressure sensors based on MEMS technology has become a compelling development.
The micro pressure sensors are of various types, mainly including capacitive type, resonant type and piezoresistive type. The capacitance type pressure sensor is easy to be interfered by signals, a special signal processing circuit is required to be integrated, and meanwhile, the capacitance is easy to be polluted to cause short circuit between capacitance plates, so that the capacitance type pressure sensor is high in manufacturing difficulty, large in integral size and harsh in application environment. The resonant pressure sensor works in a closed-loop mode, has high measurement precision, stability and resolution, but has high manufacturing difficulty and strict requirements on the quality of a material of a harmonic oscillator serving as a sensitive device, so that the processing cost is high and the production period is long. However, the piezoresistive pressure sensor has the advantages of small size, good input and output linear relation, simple and mature process and the like, and is widely applied to the fields of automobiles, mobile phones, medical instruments and the like.
Piezoresistive pressure sensors are made using the piezoresistive effect of semiconductor materials. When the elastic diaphragm of the piezoresistive pressure sensor is under the action of pressure, the elastic field in the pressure sensor changes, the doped silicon resistor is under the action of stress, the resistivity of the doped silicon resistor changes, and then the measured pressure is converted into voltage output in a certain relation by using the measuring circuit.
The micro-pressure sensor requires high sensitivity and good linearity. The reduced chip film thickness can improve the sensitivity of the sensor, but the increased film deflection leads to a dramatic deterioration in the linearity of the pressure sensor. The typical micro-pressure sensor can not obtain high linearity while obtaining high sensitivity, and conversely, the requirement of high sensitivity can not be met when obtaining high linearity. Therefore, solving the contradiction between sensitivity and linearity is a key technical difficulty to ensure reliable and accurate measurement of the micro-pressure sensor and urgently await breakthrough.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a cross island beam membrane high-temperature micro-pressure sensor chip and a preparation method thereof, which can measure micro-pressure of dozens of kPa, resist high temperature of 300 ℃, can be applied to corrosive measurement environment, can bear high overload which is several times of full scale, and have the advantages of high sensitivity, good linearity, high precision, good dynamic performance and the like, and the preparation method is simple and is easy for batch production.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a cross island beam film high-temperature micro-pressure sensor chip comprises a substrate 1, wherein a film 2 is arranged in the middle of the front face of the substrate 1, the center of the upper surface of the film 2 is connected with a root narrowing cross beam 3, the root narrowing cross beam 3 is in axial symmetry distribution, four beam roots of the root narrowing cross beam 3 are connected with the substrate 1, and the beam width w1 of the middle part of the root narrowing cross beam 3 is larger than the beam width w2 of the four beam roots of the root narrowing cross beam 3; the upper surfaces of the four beam roots of the root-narrowed cross beam 3 are respectively provided with four pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, and the effective length directions of the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are along the crystal direction with the largest piezoresistive coefficient along the (100) crystal plane; the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are sequentially connected into a semi-open-loop Wheatstone bridge through five P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5, the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 and the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are flush, and the adjacent P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 are thin slits with the width of 20-60 microns at intervals; point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5 are respectively arranged on the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5; the pressure sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, the P type heavily doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 and the point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5 form a sensitive circuit of the sensor chip.
The periphery of the front surface of the substrate 1 is provided with relief rings 7, and the upper surfaces of the relief rings 7 are flush with the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5; the embossment ring 7 and the P-type heavily doped silicon embossment blocks 5-2, 5-3, 5-4 and 5-5 are separated by a narrow slit with the width of 20-60 um, and the embossment ring 7 and the P-type heavily doped silicon embossment blocks 5-1 are connected into a whole.
The center of the lower surface of the film 2 in the etching cavity on the back surface of the substrate 1 is connected with a cross-shaped mass block 8, and the cross-shaped mass block 8 corresponds to the root part narrowing cross-shaped beam 3 up and down and is distributed in axial symmetry.
The front surface of the substrate 1 is vacuum bonded to the glass 9, and the sensitive circuit is protected in a vacuum chamber formed by the substrate 1 and the glass 9.
Five conical through holes 10-1, 10-2, 10-3, 10-4 and 10-5 are formed in the glass 9, and the five conical through holes 10-1, 10-2, 10-3, 10-4 and 10-5 are respectively concentrically aligned with five point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5; the middle of the glass 9 is provided with a groove 11, the shape of the groove 11 is square, the square size of the groove 11 corresponds to the size of the film 2, the design of the depth of the groove 11 ensures that the bottom surface of the groove 11 and the root narrow down cross beam 3 do not interfere with each other when the sensor normally works, and the bottom surface of the groove 11 can limit the root narrow down cross beam 3 when the sensor is overloaded.
The film 2 is a square film.
The thickness of the root narrowing cross beam 3 is 10-40 um, the beam width w1 of the middle part of the root narrowing cross beam 3 is 10-30% of the length of the film 2, and the beam widths w2 of the four beam roots of the root narrowing cross beam 3 are 0.25-0.5 times of the beam width w1 of the middle part of the root narrowing cross beam 3.
The thickness of the cross-shaped mass block 8 is 50-90% of the thickness of the substrate 1, the width w3 of the cross-shaped mass block 8 is 10-40% of the length of the film 2, and the length L3 of the cross-shaped mass block 8 is 30-90% of the length of the film 2.
The preparation method of the cross island beam film high-temperature micro-pressure sensor chip comprises the following steps:
1) the substrate 1 adopts an SOI silicon chip, and standard RCA cleaning is carried out on the substrate 1; the substrate 1 is divided into three layers, namely a monocrystalline silicon device layer 12, a silicon dioxide buried layer 13 and a monocrystalline silicon supporting layer 14 from top to bottom, wherein the monocrystalline silicon device layer 12 is N-type silicon, and the upper surface of the monocrystalline silicon device layer 12 is a (100) crystal face;
2) carrying out thermal oxidation on the substrate 1, and carrying out ion implantation of boron ion light doping on the whole surface of the single crystal silicon device layer 12;
3) masking the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, carrying out boron ion heavily-doped ion implantation on the rest surface of the monocrystalline silicon device layer 12, and then annealing to realize the electrical activation of implanted ions;
4) etching silicon with the thickness of the single crystal silicon device layer 14 by utilizing an ICP (inductively coupled plasma) technology to form pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 and a relief ring 7;
5) depositing silicon dioxide and silicon nitride 15 on the surface of the monocrystalline silicon device layer 12 by adopting a PECVD (plasma enhanced chemical vapor deposition) technology;
6) removing local silicon nitride and silicon dioxide by adopting ICP etching and wet etching;
7) sputtering metal by adopting a magnetron sputtering technology, and stripping to obtain point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5;
8) removing silicon with corresponding depth from the front surface of the substrate 1 by adopting an ICP (inductively coupled plasma) technology to form a root narrowed cross beam 3;
9) bonding the front surface of the substrate 1 and the glass 9 in a vacuum mode;
10) and etching the back cavity of the substrate 1, and removing silicon with corresponding depth to form the cross-shaped mass block 8.
The ion implantation concentration in the step 2) is 3 multiplied by 1014cm-2。
The ion implantation concentration of the step 3) is 1.4 multiplied by 1016cm-2The crystal directions of the four piezorelief resistor strips are consistent and are along [011 ]]Or
And (4) crystal orientation.
And 9) concentrically aligning the point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5 on the substrate 1 with the tapered through holes 10-1, 10-2, 10-3, 10-4 and 10-5 of the glass 9, and then carrying out vacuum bonding.
And 10) removing the silicon material by adopting deep reactive ion etching.
The invention has the beneficial effects that:
the stress concentration structure of the cross-shaped island beam film consisting of the cross-shaped beam 3 with the narrowed root part on the front surface, the thin film 2 and the cross-shaped mass block 8 on the back surface is used as a chip structure of the piezoresistive pressure sensor. The root narrowing cross beam 3 and the cross mass block 8 jointly increase the transverse and longitudinal stress difference at the stress concentration position, and compared with the traditional cross beam, the root narrowing cross beam 3 accumulates the stress concentration in a small area, so that the stress in the area is larger and more sensitive. The arrangement of the piezo-relief resistor strips 4-1, 4-2, 4-3, 4-4 here thus enables an increase in the sensitivity of the sensor, and disturbances of lower pressure can also be reflected in the resistance of the stress-sensitive area. Meanwhile, the root part narrowed cross-shaped beam 3 and the cross-shaped mass block 8 can improve the rigidity, the linearity and the natural frequency of the sensor, solve the contradiction between the sensitivity and the linearity and ensure that the sensor can carry out reliable and accurate measurement.
The invention adopts the vacuum bonding technology of the front surface of the substrate 1 and the glass 9, a sensitive circuit structure consisting of pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 and P-type heavily doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 on the film 2 is sealed and protected in a vacuum cavity formed by the substrate 1 and the glass 9 and a silicon glass bonding contact area, the sensitive circuit is not contacted with a test environment, only the back cavity of the substrate 1 is contacted with the test environment, and the sensitive circuit of a sensor chip is prevented from being influenced by corrosive gas and steam. Meanwhile, the front bonding can carry out high overload protection on the sensor chip.
The pressure sensor is provided with the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-4 and 5-5 and the relief ring 7, so that the tightness of the pressure sensor chip after vacuum bonding is improved, and the influence of the sensor chip on corrosive gas and steam in a test environment is further reduced. Meanwhile, the pressure sensor can be used for inverted cup packaging and leadless packaging.
The invention adopts the SOI silicon chip, so that the piezorelief resistor strips 4-1, 4-2, 4-3 and 4-4 cannot be failed due to PN junctions at the high temperature of 300 ℃. In addition, the invention adopts silicon glass bonding, thereby further improving the high temperature resistance of the sensor chip.
Compared with the prior art, the sensor chip has the characteristics of reasonable structure, high temperature resistance, corrosion resistance, high overload resistance, high sensitivity, high precision, high linearity, high dynamic characteristic and the like, is convenient to process, and has low cost.
Drawings
FIG. 1(a) is a schematic front isometric view of a pressure sensor die of the present invention; FIG. 1(b) is an enlarged view of the position A in FIG. 1 (a); FIG. 1(c) is an enlarged view of the position B in FIG. 1 (a); FIG. 1(d) is an enlarged view of the E position in FIG. 1 (a).
FIG. 2 is a schematic diagram of backside axial measurement of a pressure sensor chip according to the present invention.
Fig. 3 is a schematic view of the root narrowing cross beam 3 of the present invention.
Fig. 4 is a schematic view of a cross-shaped mass 8 of the present invention.
FIG. 5 is a front isometric view of a sensor chip after front bonding according to the present invention.
FIG. 6 is a schematic glass isometric view of a pressure sensor die of the present invention.
FIG. 7(a) is a schematic front view of a glass of a sensor chip of the present invention; FIG. 7(b) is a schematic sectional view at section D-D in FIG. 7 (a).
FIG. 8 is a schematic diagram of a method for manufacturing a sensor chip according to the present invention; FIG. (a) is a schematic diagram of a SOI wafer substructure used in the fabrication process; FIG. b is a schematic view of light doping; FIG. (c) is a schematic view of a heavily doped region; FIG. d is a schematic diagram of a dry-etched pressure-sensitive relief resistor strip, a P-type heavily-doped silicon relief block and a relief ring; FIG. e is a schematic view of silicon nitride and silicon dioxide deposition; FIG. f is a schematic diagram of etching a portion of silicon nitride and silicon dioxide; FIG. g is a schematic view of the sputtering spot electrode; FIG. h is a schematic view of a cross beam with a narrowed root on the front surface of the dry etching; FIG. (i) is a schematic bonding diagram; FIG. j is a schematic diagram of a dry-etched back cavity cross-shaped mass block.
FIG. 9 is a schematic cross-sectional view at section C-C of FIG. 5 of a pressure sensor die of the present invention in an unloaded state.
Fig. 10 is a schematic cross-sectional view at section C-C in fig. 5 of a sensor chip of the present invention in a normal operating state.
Fig. 11 is a schematic cross-sectional view at section C-C in fig. 5 of a sensor chip of the present invention in an overload state.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
Referring to fig. 1(a), fig. 1(b), fig. 1(c), fig. 1(d), fig. 2, fig. 3 and fig. 4, a cross island beam film high-temperature micro-pressure sensor chip comprises a substrate 1, wherein a thin film 2 is arranged in the middle of the front surface of the substrate 1; the center of the upper surface of the film 2 is connected with a root narrowing cross beam 3, the root narrowing cross beam 3 is in axial symmetry distribution, and the four beam roots of the root narrowing cross beam 3 are connected with the substrate 1; the beam width w1 of the middle portion of the root-narrowed cross-shaped beam 3 is larger than the beam widths w2 of the four beam roots of the root-narrowed cross-shaped beam 3; the upper surfaces of the four beam roots of the root-narrowed cross beam 3 are respectively provided with four pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, and the effective length directions of the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are along the crystal direction with the largest piezoresistive coefficient along the (100) crystal plane; the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are sequentially connected into a semi-open-loop Wheatstone bridge through five P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5, and the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 and the pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 are flush; the adjacent P-type heavily doped silicon relief blocks are 5-1, 5-2, 5-3, 5-4 and 5-5 thin slits with the width of 20-60 um at intervals; point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5 are respectively arranged on the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5; the pressure sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4, the P type heavily doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5 and the point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5 form a sensitive circuit of the sensor chip.
The periphery of the front surface of the substrate 1 is provided with relief rings 7, and the upper surfaces of the relief rings 7 are flush with the upper surfaces of the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4 and 5-5; the embossment ring 7 and the P-type heavily doped silicon embossment blocks 5-2, 5-3, 5-4 and 5-5 are separated by a narrow slit with the width of 20-60 um, and the embossment ring 7 and the P-type heavily doped silicon embossment blocks 5-1 are connected into a whole.
Referring to fig. 4, a cross-shaped mass block 8 is connected to the center of the lower surface of the thin film 2 in the etching cavity on the back surface of the substrate 1, and the cross-shaped mass block 8 is vertically corresponding to the root narrowed cross beam 3 and is axially symmetrically distributed.
Referring to fig. 5, the front surface of the substrate 1 is vacuum bonded to the glass 9.
Referring to fig. 6, 7(a) and 7(b), five tapered through holes 10-1, 10-2, 10-3, 10-4 and 10-5 are formed in the glass 9, and the five tapered through holes 10-1, 10-2, 10-3, 10-4 and 10-5 are respectively concentrically aligned with five point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5; the middle of the glass 9 is provided with a groove 11, the shape of the groove 11 is square, the square size of the groove 11 corresponds to the size of the film 2, the design of the depth of the groove 11 ensures that the bottom surface of the groove 11 and the root narrow down cross beam 3 do not interfere with each other when the sensor normally works, and the bottom surface of the groove 11 can limit the root narrow down cross beam 3 when the sensor is overloaded.
The film 2 is a square film.
Referring to fig. 3, the thickness of the root-narrowed cross beam 3 is 10 to 40um, the beam width w1 of the middle portion of the root-narrowed cross beam 3 is 10 to 30 percent of the length of the film 2, and the beam widths w2 of the four beam roots of the root-narrowed cross beam 3 are 0.25 to 0.5 times of the beam width w1 of the middle portion of the root-narrowed cross beam 3.
Referring to fig. 4, the thickness of the cross-shaped mass 8 is 50% -90% of the thickness of the substrate 1, the width w3 of the cross-shaped mass 8 is 10% -40% of the length of the film 2, and the length L3 of the cross-shaped mass 8 is 30% -90% of the length of the film 2.
Referring to fig. 8, the method for manufacturing the cross island beam film high-temperature micro-pressure sensor chip includes the following steps:
1) referring to fig. 8 (a), the substrate 1 is an SOI silicon wafer, and the substrate 1 is subjected to standard RCA cleaning; the substrate 1 is divided into three layers, namely a monocrystalline silicon device layer 12, a silicon dioxide buried layer 13 and a monocrystalline silicon supporting layer 14 from top to bottom, wherein the monocrystalline silicon device layer 12 is N-type silicon, and the upper surface of the monocrystalline silicon device layer 12 is a (100) crystal face;
2) referring to fig. 8 (b), the substrate 1 is thermally oxidized, and the entire surface of the single crystal silicon device layer 12 is ion-implanted with boron ions lightly doped to a concentration of 3 × 1014cm-2；
3) Referring to fig. 8 (c), masking the piezorelief resistor strips 4-1, 4-2, 4-3 and 4-4, carrying out boron ion heavily doped ion implantation on the rest surface of the monocrystalline silicon device layer 12, and then annealing to realize electric activation of implanted ions; the ion implantation concentration is 1.4 × 1016cm-2The crystal directions of the four piezorelief resistor strips are consistent and are along [011 ]]Or
A crystal orientation;
4) referring to fig. 8 (d), the silicon of the thickness of the single-crystal silicon device layer 14 is etched away by utilizing the ICP technology to form the piezorelief resistor strips 4-1, 4-2, 4-3 and 4-4, and the P-type heavily-doped silicon relief blocks 5-1, 5-2, 5-3, 5-4, 5-5 and the relief ring 7;
5) referring to fig. 8 (e), silicon dioxide and silicon nitride 15 are deposited on the surface of the single-crystal silicon device layer 12 by using PECVD technique;
6) referring to fig. 8 (f), ICP etching and wet etching are used to remove local silicon nitride and silicon dioxide 15;
7) referring to the graph (g) in FIG. 8, sputtering metal by adopting a magnetron sputtering technology, and stripping to obtain point electrodes 6-1, 6-2, 6-3, 6-4 and 6-5;
8) referring to (h) in fig. 8, removing silicon with a corresponding depth from the front surface of the substrate 1 by using an ICP technique to form a root-narrowed cross beam 3;
9) referring to fig. 8 (i), the front surface of the substrate 1 is vacuum bonded to the glass 9, and the dot electrodes 6-1, 6-2, 6-3, 6-4, 6-5 on the substrate 1 are concentrically aligned with the tapered through holes 10-1, 10-2, 10-3, 10-4, 10-5 of the glass 9 when bonding;
10) referring to (j) of fig. 8, deep reactive ions are used to etch the back cavity of the substrate 1, and silicon with corresponding depth is removed to form a cross-shaped mass block 8.
The working principle of the pressure sensor chip is as follows:
referring to fig. 9, the pressure sensor is in an unloaded state.
Referring to fig. 10, the pressure sensor is in a working state, under the action of a micro pressure P, the thin film 2 begins to protrude upwards, the root part narrowing cross beam 3 and the cross mass block 8 work together to concentrate stress at the resistor arrangement position, and the root part area of the root part narrowing cross beam 3 is reduced to facilitate stress accumulation, so that the stress variation of the four pressure-sensitive relief resistor strips 4-1, 4-2, 4-3 and 4-4 is further increased, so that the sensitivity of the pressure sensor is improved, and meanwhile, the root part narrowing cross beam 3 and the cross mass block 8 increase the structural rigidity of the pressure sensor, so that the linearity of the pressure sensor is improved, and the dynamic response characteristic of the pressure sensor is improved.
Referring to fig. 11, the pressure sensor is in an overload state, and when the sensor with 20kPa range is subjected to a high overload atmospheric pressure of 5 times of full range, the glass 9 limits the deformed root narrowed cross beam 3.
The invention firstly provides a piezoresistive pressure sensor design combining a root narrowed cross beam 3 and a cross mass block 8. Under the condition of no back cross-shaped mass block, the maximum equivalent stress of the cross-shaped beam with the narrowed root part is nearly doubled compared with the maximum equivalent stress of the cross-shaped beam with the unchanged root part, so that the stress concentration effect of the sensor can be improved by narrowing the root part of the cross-shaped beam, and the sensitivity of the sensor is improved. The piezorelief resistance strips 4-1, 4-2, 4-3 and 4-4 are distributed at the stress concentration part with the dual functions of the narrowed cross beam 3 at the root part and the cross mass block 8. The pressure sensor of the invention improves the linearity, rigidity and natural frequency of the sensor while maximizing the sensitivity, and solves the contradiction between the sensitivity and the linearity of the sensor.
The pressure sensor chip adopts the vacuum bonding of the front surface of the substrate and the glass, and protects the sensitive circuit in a vacuum cavity consisting of a silicon chip and the glass and a silicon glass bonding contact area, thereby avoiding the corrosion of a measuring environment to the sensitive circuit of the pressure sensor chip.
The pressure sensor is provided with the P-type heavily-doped silicon relief block and the relief ring, so that the tightness of the pressure sensor chip after vacuum bonding is improved, and the corrosion resistance of the sensor chip is further improved. Meanwhile, the pressure sensor can be used for inverted cup packaging and leadless packaging.
TABLE 1 below shows the comparison of the simulated performance of the piezoresistive sensor of the present invention with the sensor of the cross beam membrane structure and the island membrane structure, wherein the pressure is 20kPa, and the resistance is arranged at the center of the four edges of the square thin film of each sensor structure, i.e. the respective stress concentration areas, VonMISES and σ1-σtIs the average stress value at which the resistor is placed. It can be seen that the pressure sensor of the present invention has the highest sensitivity and higher linearity.
Table 1
The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations to the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.
Claims (9)
1. The preparation method of the cross island beam film high-temperature micro-pressure sensor chip is characterized in that the cross island beam film high-temperature micro-pressure sensor chip comprises a substrate (1), a thin film (2) is arranged in the middle of the front face of the substrate (1), a root narrowing cross beam (3) is connected to the center of the upper surface of the thin film (2), the root narrowing cross beam (3) is in axial symmetry distribution, the four beam roots of the root narrowing cross beam (3) are connected with the substrate (1), and the beam width w1 of the middle part of the root narrowing cross beam (3) is larger than the beam width w2 of the four beam roots of the root narrowing cross beam (3); the upper surfaces of four beam roots of the cross beam (3) with the narrowed root part are respectively provided with four piezorelief resistor strips (4-1, 4-2, 4-3 and 4-4), and the effective length direction of the piezorelief resistor strips (4-1, 4-2, 4-3 and 4-4) is along the crystal direction with the largest crystal plane piezoresistive coefficient of (100); the pressure-sensitive relief resistor strips (4-1, 4-2, 4-3 and 4-4) are sequentially connected into a half-open-loop Wheatstone bridge through five P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5), the upper surfaces of the P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5) and the pressure-sensitive relief resistor strips (4-1, 4-2, 4-3 and 4-4) are flush, and the adjacent P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5) are separated by a thin slit with the width of 20-60 um; point electrodes (6-1, 6-2, 6-3, 6-4 and 6-5) are respectively arranged on the upper surfaces of the P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5); the pressure-sensitive relief resistor strips (4-1, 4-2, 4-3 and 4-4), the P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5) and the point electrodes (6-1, 6-2, 6-3, 6-4 and 6-5) form a sensitive circuit of the sensor chip;
the periphery of the front surface of the substrate (1) is provided with relief rings (7), and the upper surfaces of the relief rings (7) are flush with the upper surfaces of the P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5); the embossment ring (7) is connected with the second P-type heavily doped silicon embossment block (5-2), the third P-type heavily doped silicon embossment block (5-3), the fourth P-type heavily doped silicon embossment block (5-4) and the fifth P-type heavily doped silicon embossment block (5-5) into a whole at intervals of 20-60 um wide slits, and the embossment ring (7) is connected with the first P-type heavily doped silicon embossment block (5-1);
the center of the lower surface of a film (2) in an etching cavity on the back surface of a substrate (1) is connected with a cross-shaped mass block (8), and the cross-shaped mass block (8) is vertically corresponding to a root narrowed cross beam (3) and is axially symmetrically distributed;
the front surface of the substrate (1) is bonded with the glass (9) in a vacuum mode, and the sensitive circuit is protected in a vacuum cavity formed by the substrate (1) and the glass (9);
the preparation method of the cross island beam film high-temperature micro-pressure sensor chip is characterized by comprising the following steps of:
1) the substrate (1) adopts an SOI silicon chip, and standard RCA cleaning is carried out on the substrate (1); the substrate (1) is divided into three layers, namely a monocrystalline silicon device layer (12), a silicon dioxide buried layer (13) and a monocrystalline silicon supporting layer (14) from top to bottom, wherein the monocrystalline silicon device layer (12) is N-type silicon, and the upper surface of the monocrystalline silicon device layer (12) is a (100) crystal face;
2) carrying out thermal oxidation on the substrate (1), and carrying out ion implantation of boron ion light doping on the whole surface of the single crystal silicon device layer (12);
3) masking the pressure-sensitive relief resistor strips (4-1, 4-2, 4-3 and 4-4), carrying out boron ion heavily-doped ion implantation on the rest surface of the monocrystalline silicon device layer (12), and then annealing to realize the electrical activation of implanted ions;
4) etching silicon with the thickness of the single crystal silicon device layer (12) by utilizing an ICP (inductively coupled plasma) technology to form piezorelief resistor strips (4-1, 4-2, 4-3 and 4-4), and P-type heavily-doped silicon relief blocks (5-1, 5-2, 5-3, 5-4 and 5-5) and relief rings (7);
5) depositing silicon dioxide and silicon nitride (15) on the front surface of the silicon wafer by adopting a PECVD (plasma enhanced chemical vapor deposition) technology;
6) removing local silicon nitride and silicon dioxide by adopting ICP etching and wet etching;
7) sputtering metal by adopting a magnetron sputtering technology, and stripping to obtain point electrodes (6-1, 6-2, 6-3, 6-4 and 6-5);
8) removing silicon with corresponding depth from the front surface of the substrate (1) by adopting an ICP (inductively coupled plasma) technology to form a root narrowed cross beam (3);
9) bonding the front surface of the substrate (1) and the glass (9) in a vacuum manner;
10) and etching the back cavity of the substrate (1), and removing silicon with corresponding depth to form a cross-shaped mass block (8).
2. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 1, wherein the method comprises the following steps: five conical through holes (10-1, 10-2, 10-3, 10-4 and 10-5) are formed in the glass (9), and the five conical through holes (10-1, 10-2, 10-3, 10-4 and 10-5) are respectively concentrically aligned with five point electrodes (6-1, 6-2, 6-3, 6-4 and 6-5); glass (9) middle part is equipped with recess (11), and recess (11) shape is the square, and recess (11) square size corresponds to film (2) size, and the design of recess (11) degree of depth guarantees that sensor when normal work, and recess (11) bottom surface and root narrow down cross type roof beam (3) do not take place to interfere, and when transshipping, recess (11) bottom surface can be spacing with root narrow down cross type roof beam (3).
3. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 1, wherein the method comprises the following steps: the film (2) is a square film.
4. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 1, wherein the method comprises the following steps: the thickness of the root narrowing cross beam (3) is 10-40 um, the beam width w1 of the middle part of the root narrowing cross beam (3) is 10-30% of the length of the film (2), and the beam widths w2 of the four beam roots of the root narrowing cross beam (3) are 0.25-0.5 times of the beam width w1 of the middle part of the root narrowing cross beam (3).
5. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 1, wherein the method comprises the following steps: the thickness of the cross-shaped mass block (8) is 50-90% of the thickness of the substrate (1), the width w3 of the cross-shaped mass block (8) is 10-40% of the length of the film (2), and the length L3 of the cross-shaped mass block (8) is 30-90% of the length of the film (2).
6. The method for preparing a cross island beam membrane high-temperature micro-pressure sensor chip according to claim 1Characterized in that: the ion implantation concentration in the step 2) is 3 multiplied by 1014cm-2。
7. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 6, wherein the method comprises the following steps: the ion implantation concentration of the step 3) is 1.4 multiplied by 1016cm-2The crystal directions of the four piezorelief resistor strips are consistent and are along [011 ]]Or
And (4) crystal orientation.
8. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 6, wherein the method comprises the following steps: and 9) concentrically aligning the point electrodes (6-1, 6-2, 6-3, 6-4 and 6-5) on the substrate (1) with the tapered through holes (10-1, 10-2, 10-3, 10-4 and 10-5) of the glass (9) and then carrying out vacuum bonding.
9. The method for preparing the cross island beam film high-temperature micro-pressure sensor chip according to claim 6, wherein the method comprises the following steps: and 10) removing the silicon material by adopting deep reactive ion etching.
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