CN104733367A - Lift pin assembly and substrate processing apparatus having the same - Google Patents
Lift pin assembly and substrate processing apparatus having the same Download PDFInfo
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- CN104733367A CN104733367A CN201410797742.1A CN201410797742A CN104733367A CN 104733367 A CN104733367 A CN 104733367A CN 201410797742 A CN201410797742 A CN 201410797742A CN 104733367 A CN104733367 A CN 104733367A
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- substrate support
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- lifting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a lift pin assembly and a substrate processing apparatus having the same. The lift pin assembly comprises a first lift pin and a second lift pin. At least a part of the first lift pin supports the bottom surface of the substrate. The lift pin assembly is liftable. The second lift pin is configured to guide the first lift pin and is lifted through a substrate supporting member.
Description
Technical field
The present invention relates to a kind of lifting pin sub-assembly, and more particularly relate to and a kind ofly can prevent lifting pin impaired lifting pin sub-assembly and a kind of substrate-treating apparatus with lifting pin sub-assembly.
Background technology
In general, a kind of technique for the manufacture of semiconductor device or liquid crystal indicator comprises: thin film deposition processes, and it for depositing the film formed by dielectric substance on wafer or glass substrate; Optical lithography processes, it is for the selected district by using light-sensitive material exposed film; Etch process, it removes the film in selected district, forms institute's desirable pattern whereby; And cleaning procedure, it is for removing residue.Herein, technique as described above must repeat.And, each in described technique can be performed in reative cell, wherein form suitable environment to perform corresponding technique.
Substrate support for support substrates and the gas inject unit for injection technology gas can through settling with facing with each other in reative cell.Herein, multiple through hole is perpendicular through substrate support.Lifting pin is coupled to each in through hole.That is, lifting pin inserts from the downside of substrate support.The upper end that head is placed in lifting pin is supported by the hook-shaped protuberance be placed on the top surface of substrate support.Lifting pin can be used for substrate to be loaded on substrate support or from substrate support unloading substrate.
But when substrate support declines, substrate support can decline further preset distance after the lower surface of the low portion haptoreaction room of lifting pin.Herein, lifting pin tiltable, and therefore damaged by the excessive force occurred when lifting pin contact through hole.When lifting pin is damaged, support substrates difficulty rightly.As a result, in the situation of plasma processing equipment, plasma is unstable.In addition, when lifting pin is damaged, the operation of described equipment must be stopped to be damaged lifting pin for replacement.Therefore, productivity ratio may reduce, and be seated substrate on lifting pin can be damaged or fracture.And when substrate is damaged, other assemblies of substrate-treating apparatus can one after the other by plasma damage.
For reducing the damage of lifting pin, persistence must be improved.As a result, the structure in lifting pin guide member is fixed in the through hole of substrate support, and propose that lifting pin raises along the inner side of lifting pin guide member.Be disclose this structure in the Korean Patent of 10-1218570 in registration number.And it is wherein minimize contact zone between lifting pin guide member and lifting pin or by use direct friction to reduce structure that parts (such as bearing) reduce the frictional force between lifting pin guide member and lifting pin.
Summary of the invention
The invention provides and a kind ofly can prevent lifting pin impaired lifting pin sub-assembly and a kind of substrate-treating apparatus using lifting pin sub-assembly.
The present invention also provide a kind of around and protection from least one the lifting pin that substrate support is given prominence to downwards to prevent described lifting pin impaired lifting pin sub-assembly and a kind of substrate-treating apparatus with lifting pin sub-assembly.
According to one exemplary embodiment, a kind of lifting pin sub-assembly comprises: the first lifting pin, the lower surface of its at least one part support substrates, and described first lifting pin can raise; And second lifting pin, it is configured to guide described first lifting pin, and described second lifting pin is raised by substrate support.
The section of the described rising of described first lifting pin of wherein said second lifting pin guiding can be greater than the thickness of described substrate support.
According to another one exemplary embodiment, a kind of lifting pin sub-assembly comprises: the first lifting pin, the lower surface of its at least one part support substrates, and described first lifting pin can raise; And second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to substrate support.
The section of the described rising of described first lifting pin of wherein said second lifting pin guiding can be greater than the thickness of described substrate support.
First first lifting pin described in when comparing with described second lifting pin can be given prominence to from the top surface of described substrate support.
Described first lifting pin and described second lifting pin can one after the other be given prominence to from the top surface of described substrate support.
Described first lifting pin can be performed relative to the described decline relative to described substrate support of the described rising of described substrate support and described second lifting pin simultaneously.
Described first lifting pin can be performed relative to the described rising relative to described substrate support of the described decline of described substrate support and described second lifting pin simultaneously.
Described lifting pin sub-assembly can comprise at least one first lubrication unit between outer surface and the inner surface of described second lifting pin being placed in described first lifting pin further.
Described lifting pin sub-assembly can comprise at least one second lubrication unit be placed between described second lifting pin and the through hole of described substrate support further.
Described lifting pin sub-assembly can comprise further be placed in described first lifting pin low portion on and there is the contact component of the length of the diameter being greater than described first lifting pin.
Described lifting pin sub-assembly can comprise further be placed in described second lifting pin low portion on and there is the contact component of the width of the width of the main body being greater than described second lifting pin.
At least one part of described second lifting pin can be formed by electric conducting material or insulating material.
According to another one exemplary embodiment, a kind of lifting pin sub-assembly comprises: substrate support; First lifting pin, it is configured to support the substrate be seated on described substrate support, and described first lifting pin can raise relative to described substrate support; First lifting pin guide member, it is configured to the described rising of guiding described first lifting pin, and described first lifting pin guide member can raise relative to described substrate support.
Described lifting pin sub-assembly can comprise the second lifting pin guide member being configured to the described rising of guiding described first lifting pin guide member further, and described second lifting pin guide member is placed between described substrate support and described first lifting pin.
The section of the described rising of described first lifting pin of wherein said first lifting pin guide member guiding can be greater than the thickness of described substrate support.
First first lifting pin described in when comparing with described first lifting pin guide member can be given prominence to from the top surface of described substrate support.
Described first lifting pin and described first lifting pin guide member can one after the other be given prominence to from the top surface of described substrate support.
Described first lifting pin can be performed relative to the described decline relative to described substrate support of the described rising of described substrate support and described first lifting pin guide member simultaneously.
Described first lifting pin can be performed relative to the described rising relative to described substrate support of the described decline of described substrate support and described first lifting pin guide member simultaneously.
The described rising of described first lifting pin guide member relative to described substrate support and the decline of described substrate support can be performed simultaneously.
According to another one exemplary embodiment, a kind of substrate-treating apparatus comprises: reative cell; Substrate support, it is placed in support substrates in described reative cell, and described substrate support has multiple through hole; And multiple lifting pin sub-assembly, its described through hole by described substrate support is to support the part of described substrate, each in wherein said lifting pin sub-assembly comprises: the first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And second lifting pin, it is configured to the described rising of guiding described first lifting pin, and described second lifting pin raises by each in described through hole.
According to an one exemplary embodiment again, a kind of substrate-treating apparatus comprises: reative cell; Substrate support, it is placed in support substrates in described reative cell, and described substrate support has multiple through hole; And multiple lifting pin sub-assembly, its described through hole by described substrate support is to support the part of described substrate, each in wherein said lifting pin sub-assembly comprises: the first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to described substrate support.
According to an one exemplary embodiment even again, a kind of method be separated for substrate and described substrate being located substrate support thereon comprises: preparation feedback room; Preparation to be placed in described reative cell and to have the substrate support of multiple through hole; Prepare by multiple lifting pin sub-assemblies of the described through hole of described substrate support to support the part of described substrate; Described substrate support and described multiple lifting pin sub-assembly is allowed to decline; The inwall of reative cell described in the first molding pin contacts allowing each in described multiple lifting pin sub-assembly; Be separated with described substrate support by described first lifting pin at least one part by described substrate; And allow the second lifting pin of each in described multiple lifting pin sub-assembly to contact the described inwall of described reative cell, wherein said lifting pin sub-assembly comprises: described first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And described second lifting pin, it is configured to the described rising of guiding described first lifting pin, and described second lifting pin can raise relative to described substrate support.
According to an one exemplary embodiment even again, a kind of method be separated for substrate and described substrate being located substrate support thereon comprises: preparation feedback room; Preparation to be placed in described reative cell and to have the substrate support of multiple through hole; Prepare by multiple lifting pin sub-assemblies of the described through hole of described substrate support to support the part of described substrate; Described substrate support and described multiple lifting pin sub-assembly is allowed to decline; The inwall of reative cell described in the first molding pin contacts allowing each in described multiple lifting pin sub-assembly; Be separated with described substrate support by described first lifting pin at least one part by described substrate; And allow the second lifting pin of each in described multiple lifting pin sub-assembly to contact the described inwall of described reative cell, wherein said lifting pin sub-assembly comprises: described first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And described second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to described substrate support.
Accompanying drawing explanation
One exemplary embodiment can be understood in more detail according to the following explanation carried out by reference to the accompanying drawings, in the drawing:
Fig. 1 is the cross-sectional view of the substrate-treating apparatus according to one exemplary embodiment;
Fig. 2 is the partial cross sectional view of graphic extension according to the couple state between the lifting pin sub-assembly of one exemplary embodiment and substrate support;
Fig. 3 is the cross-sectional view of the lifting pin sub-assembly according to one exemplary embodiment;
Fig. 4 is cross-sectional views of operation for explaining the lifting pin sub-assembly according to one exemplary embodiment to 7; And
Fig. 8 is cross-sectional views of lifting pin sub-assembly according to another one exemplary embodiment to 11.
Embodiment
Hereafter, describe specific embodiment in detail with reference to accompanying drawing.But the present invention can embody in different forms and should not be construed as limited to stated embodiment herein.On the contrary, provide these embodiments to make the present invention to be thorough and complete, and scope of the present invention will be passed on fully to those skilled in the art.
Fig. 1 is the cross-sectional view of the substrate-treating apparatus according to one exemplary embodiment, Fig. 2 is the partial cross sectional view of graphic extension according to the couple state between the lifting pin sub-assembly of one exemplary embodiment and substrate support, and Fig. 3 is the cross-sectional view of the lifting pin sub-assembly according to one exemplary embodiment.
With reference to figure 1, the substrate-treating apparatus according to one exemplary embodiment can comprise: reative cell 100, and it has predetermined reaction compartment; Substrate support 200, it is placed in the side of reative cell 100 with support substrates 10; Lifting pin 300, it is separated with substrate support 200 for making substrate 10 be seated on substrate support 200 or by substrate 10; Gas inject unit 400, its be placed in reative cell 100 in the face of substrate support 200 opposite side in injection technology gas; Electric power supply unit 500, it produces the electric power of plasma in reative cell 100 for being applied to; And gas supply unit 600, process gas is fed in reative cell 100 by it.And, the exhaust unit 700 of the inner side of emptying reative cell 100 under a predetermined can be provided for further.
Reative cell 100 can have the cylinder form with predetermined space.Reative cell 100 can have various shape according to the shape of substrate, for example, has hexahedral shape.And reative cell 100 can comprise: main body 100a, it comprises roughly square shape plane and the sidewall that upwards extends from described plane and have predetermined reaction compartment; And lid 100b, it has roughly square shape and being placed on main body 100a with enclosed reaction chamber 100.Substrate support 200 and gas inject unit 400 can be placed in reative cell 100 with facing with each other.And reative cell 100 can have substrate entrance 110 in the first region, by substrate entrance 110 loading or unloading substrate 10.And the gas supply hole 120 being connected to the gas supply unit 600 be fed in reative cell 100 by process gas is defined in the second area of reative cell 100.And steam vent 130 can be defined in adjust the internal pressure of reative cell 100 in the 3rd region of reative cell 100, and exhaust unit 700 can be connected to steam vent 130.For example, substrate entrance 110 can be defined in the central area of a side surface of reative cell 100 and to have the size being enough to allow substrate 10 to enter by it.Gas supply hole 120 is by covering the presumptive area of 100b, and steam vent 130 can pass through the side surface of reative cell 100 in the position lower than substrate support 200.
Substrate support 200 can be placed in reative cell 100, and the substrate 10 be loaded in reative cell 100 can be seated on substrate support 200.Substrate support 200 can through settling the position be in the face of gas inject unit 400.For example, substrate support 200 can be placed in the inner underside of reative cell 100, and gas inject unit 400 can be placed in the interior upside of reative cell 100.Herein, substrate 10 can comprise the silicon substrate for the manufacture of semiconductor.Or substrate 10 can comprise the glass substrate for the manufacture of flat-panel monitor.And substrate support 200 can comprise electrostatic chuck to make to be located and support substrates 10 by using electrostatic force absorption and maintaining substrate 10.Or substrate support 200 is by vacuum suction or mechanical force support substrates 10.And substrate support 200 can have the shape of the shape corresponding to substrate 10, for example, circular or square shape.And substrate support 200 can have the size of the size being greater than substrate 10.The substrate lifter machine 210 raised for making substrate support 200 can be placed in the low portion of substrate support 200.Substrate lifter machine 210 can through providing at least one region with support substrates strutting piece 200, for example, and central area.When substrate 10 is seated on substrate support 200, substrate support 200 is removable with close to gas inject unit 400.And heater (displaying) can be provided in substrate support 200.Described heater can produce the heat with predetermined temperature and make easily to perform thin film deposition processes to substrate 10 with heated substrate 10.In addition, cooled water supply channel (displaying) can be provided in cooling water supply in substrate support 200, reduces the temperature of substrate 10 whereby.And multiple through holes 220 that multiple lifting pin sub-assembly 300 passes through can be defined in substrate support 200.And the hook-shaped protuberance 230 supporting described multiple lifting pin sub-assembly is placed in above through hole 220.Substrate support 200 can be formed by the material with superior thermal conductivity.For example, substrate support 200 can by carborundum (SiC), the graphite being coated with SiC, silicon nitride (Si
3n
4), one in aluminium nitride (AlN) and opaque quartz formed.
Be separated with substrate support 200 to make substrate be seated on substrate support 200 or by substrate in described multiple through hole that multiple lifting pin sub-assembly 300 can be placed in substrate support 200.That is, at least one part of each in lifting pin sub-assembly 300 can be given prominence to support from the top surface of substrate support the substrate 10 that loaded by substrate entrance 110 and is separated with substrate support 200 by the substrate 10 be seated substrate support 200.For this reason, lifting pin sub-assembly 300 can be placed in the through hole 220 of substrate support 200 during described technique.On the other hand, when technique starts or complete, lifting pin sub-assembly 300 can decline along with substrate support 200 and project upwards.And as illustrated in fig. 2, the lifting pin sub-assembly 300 according to one exemplary embodiment comprises: the first lifting pin 310, its at least one part contact substrate 10; And the second lifting pin 320 can be raised, it is inserted in the through hole 220 of substrate support 200 with the inner surface of contact through hole 220 and around the first lifting pin 310 to guide the rising of the first lifting pin 310.Hereafter will describe lifting pin sub-assembly 300 in detail.
Gas inject unit 400 can be placed in the interior upside of reative cell 100 to be injected on substrate 10 by process gas.Gas inject unit 400 can comprise head-type injection unit and injection type injection unit.In the present example, head-type injection unit will be described to gas inject unit 400.Head-type gas inject unit 400 can have predetermined space.And head-type gas inject unit 400 can have: upper part, and it is connected to gas supply unit 600; And low portion, wherein define the multiple hand-holes 410 for being injected into by process gas on substrate 10.Gas inject unit 400 can have the shape of the shape corresponding to substrate 10, for example, and circular or square shape.And, can be provided in further gas inject unit 400 for distributing equably from the distribution grid (displaying) of the process gas of gas supply unit 600 supply.Described distribution grid can be adjacent to gas and flow into unit arrangement, and described gas is flowed into unit and is connected to process gas feeding unit 600 to be introduced by process gas by it.Described distribution grid can have predetermined plate shape.That is, described distribution grid can through settling with the top surface with gas inject unit 400 spaced a predetermined distance.And described distribution grid can have multiple through hole.Therefore, the process gas supplied from gas supply unit 600 can be distributed in gas inject unit 400 equably owing to providing distribution grid.Therefore, process gas injects downwards equably by hand-hole 410.And gas inject unit 400 can be formed by the electric conducting material of such as aluminium.Herein, gas inject unit 400 can through settling with the sidewall of reative cell 100 and cover 100b spaced a predetermined distance.And insulator 420 can be placed between gas inject unit 400 and reative cell 100.When gas inject unit 400 is formed by electric conducting material, gas inject unit 400 can be used as the upper electrode receiving electric power from electric power supply unit 500.
Electric power supply unit 500 can be fed to process gas in reative cell 100 to make the electric power of process gas plasma for being applied to excite.That is, electric power supply unit 500 by reative cell 100 and be then connected to gas inject unit 400 with supply high-frequency electric power for generation plasma.Electric power supply unit 500 can comprise high-frequency electric power source and adaptation.For example, high-frequency electric power source can produce the high-frequency electric power of about 13.56MHz, and adaptation the impedance of detection reaction room 100 can have the impedance imaginary component of the phase place contrary with the real component of impedance to produce, whereby maximum power is fed in reative cell make described imaginary component with for real component and therefore to produce the pure resistance of optimal plasma body identical.High-frequency electric power can be applied in gas inject unit 400 by electric power supply unit 500, and substrate support 200 can through ground connection to allow the process gas plasma in reative cell 100.
Gas supply unit 600 can comprise gas supply source 610 for supplying each in multiple process gas and for described process gas to be fed to the feed tube 620 reative cell 100 from gas supply source 610.Described process gas can comprise thin film deposition gas and etching gas.And, such as H
2, Ar and analog inert gas can through supply together with process gas.Valve and mass flowmenter for controlling the supply of described process gas can be placed between gas supply source 610 and feed tube 620.
Exhaust unit 700 can comprise exhaust apparatus 710 and be connected to the blast pipe 720 of steam vent 130 of reative cell 100.The vacuum pump of such as turbomolecular pump can be used as exhaust apparatus 710.Therefore, the inner side of reative cell 100 can be formed at through reducing in pressure air, and for example, reative cell 100 can be configured to about 0.1 millitorr of suction or less pressure.Multiple steam vent can be defined in the side surface corresponding below substrate support 200 of reative cell 100 and the lower surface of reative cell 100.Therefore, multiple blast pipe 720 can be provided, and then multiple blast pipe 720 can be connected respectively to multiple steam vent 130.And, for reducing the time of discharging process gas and spending, multiple blast pipe 720 and exhaust apparatus 710 can be provided further.
The lifting pin sub-assembly according to one exemplary embodiment is described in detail with reference to Fig. 2 and 3.
Lifting pin sub-assembly 300 according to one exemplary embodiment can comprise: the first lifting pin, its at least one part support substrates 10; And second lifting pin 320, the first lifting pin 310 is accommodated therein and has the outer part of the side surface of the through hole of contact substrate support 200 by it.That is, the second lifting pin 320 can be inserted in the through hole 220 of substrate support 200, and the first lifting pin 310 can be inserted in the second lifting pin 320.And the first lifting pin 310 can have the length of the length being greater than the second lifting pin 320.
First lifting pin 310 be used in make substrate 10 be seated substrate support 200 when substrate 10 is loaded in reative cell 100 top surface on or when substrate 10 unloads from reative cell 100, the top surface of substrate 10 with substrate support 200 is separated.First lifting pin 310 can comprise first head 312 with substantial cylindrical shape and the bar 314 giving prominence to predetermined length from the first head 312 downwards.Herein, bar 314 can have the diameter of the diameter being less than the first head 312, and protuberance 316 can be placed on the coupling part between the first head 312 and bar 314.That is, first head 312 with the diameter of the diameter being greater than bar 314 can have from bar 314 outstanding with the lower surface forming protuberance 316.The protuberance 316 of the first lifting pin 310 corresponds to the hook-shaped protuberance 326 of the second pin 320.That is, the protuberance 316 of the first lifting pin 310 can be supported to prevent the first mould pin 310 to be separated with the second lifting pin 320 by the hook-shaped protuberance 326 of the second lifting pin 320.
Second lifting pin 320 can be inserted in the through hole 220 of substrate support 400.And the second lifting pin 320 can have substantial cylindrical shape and make the first lifting pin 310 be inserted in wherein.Second lifting pin 320 can comprise the second head 322 of being placed in its upper part and is placed in the second lower head and has the main body 324 of predetermined length.And through portion can along the longitudinal direction perpendicular through the core of each in the second head 322 and main body 324, and the first lifting pin 310 can be inserted in through portion.First head 312 of the first lifting pin 310 is received in the second head 322.That is, the interior diameter that the second head 322 can have corresponding to the overall diameter of the first head 312 makes the first head 312 be accommodated therein.Herein, the interior diameter that the second head 322 of the second lifting pin 320 can have an overall diameter being greater than the first head 312 rubs to prevent the side surface of the second head 322 and the first head 312.And the bar 314 of the first lifting pin 310 can be received in main body 324 to allow bar 314 vertically movement.For example, through portion can make main body have to be greater than through providing the interior diameter of the diameter of bar 314.Herein, main body 324 can have the length that is less than bar 314 and be greater than the vertical length of the thickness of substrate support 200.That is, the second head 322 of the second lifting pin 320 can have the vertical length identical with the first head 312 of the first lifting pin 310, and the main body 324 of the second lifting pin 320 can have the length of the length of the bar 314 being less than the first lifting pin 310.Therefore, when the first head 312 is supported by the second head 322 of the second lifting pin 320, bar 314 can be given prominence to downwards from main body 324.Second lifting pin 320 has the hook-shaped protuberance 326 between the low portion and the upper part of main body 324 of the second head 322.That is, the through portion of the second head 322 can have the interior diameter of the interior diameter of the through portion being greater than main body 324.Therefore, the upper part of main body 324 can be exposed to the downside of the through portion of the second head 322 to form hook-shaped protuberance 326.The protuberance 316 of the first lifting pin 310 can be supported by the hook-shaped protuberance 326 of the second lifting pin 320.And when the first head 312 of the first lifting pin 310 is supported by the hook-shaped protuberance 326 of the second lifting pin 320, the surface of the first head 312 and the second head 322 can maintain phase co-altitude.The width that second head 322 of the second lifting pin 320 can have a width being greater than main body 324 is with from main body 324 outwardly.Between the outside that protuberance 328 can be placed in the second head 322 and the outside of main body 324.Protuberance 328 can by be placed in substrate support 400 through portion 220 upper part on hook-shaped protuberance 230 support.That is, substrate support 400 can have the hook-shaped protuberance 230 of the width of the width with the second head being equal to or greater than the second lifting pin 320 to support the second head 322 of the second lifting pin 320.And the frictional force produced when the lubrication unit 330 of point cantact first lifting pin 310 can be placed in inside main body 324 inwall of through portion (namely, on) to be minimized in and to make the first lifting pin 310 raise.Herein, lubrication unit 330 can comprise ball.But lubrication unit 330 can be not limited to ball.Or lubrication unit 330 can have the cylinder form of settling relative to the central axis of the first lifting pin 310.And lubrication unit 330 (namely, ball) is seated being located hole and can being defined in the inwall of the second lifting pin 320 wherein.Herein, ball can through inserting the outside (namely, towards the second lifting pin 320) that makes a part for ball be projected into be located hole with point cantact first lifting pin 310.And more than three or three balls can be placed on same plane symmetrically.For example, four balls can be placed on same plane.Herein, four balls same distance can be settled and give prominence to phase co-altitude towards the first lifting pin 310.
Because at least one part of each in the first lifting pin 310 and the second lifting pin 320 is exposed to process gas, therefore the first lifting pin 310 and the second lifting pin 320 can be formed by the pottery or insulating material with corrosion resistance.That is, the first pin 310 and the second pin 320 can be formed by same material.But the first lifting pin 310 and the second lifting pin 320 can be formed by material different from each other.Therefore, the first lifting pin 310 and the second lifting pin 320 can have mechanical strength different from each other.That is, the second lifting pin 320 can have the mechanical strength of the mechanical strength being greater than or less than the first lifting pin 310.And at least one part of the second lifting pin 320 can be formed to minimize the thermal unbalance being implemented in substrate support 200 wherein with heater by the material identical with substrate support 200.For example, the main body 324 of the second lifting pin 320 can be formed by the material identical with substrate support 200.And, the second lifting pin 320 can by do not cause having relatively high potential substrate support 200 and have relatively low electromotive force reative cell 100 low portion between the material of abnormal electric discharge formed.That is, the second lifting pin 320 can be formed by insulating material.Or the second lifting pin 320 can be used as the path for the charge discharge that will anisotropically focus in substrate support 200, namely, earth connection.For this reason, the second lifting pin 320 can be formed by electric conducting material.
Fig. 4 is cross-sectional views of operation for explaining the lifting pin sub-assembly according to one exemplary embodiment to 7.
With reference to figure 4, when substrate support 200 rises, the protuberance 328 of the second lifting pin 320 can be supported by the hook-shaped protuberance 230 of substrate support 200, and the protuberance 316 of the first lifting pin 310 can be hooked in the second lifting pin 320 hook-shaped protuberance 326 on to rise.That is, when substrate support 200 rises, the first lifting pin 310 and the second lifting pin 320 all can rise.
With reference to figure 5, when substrate support 200 declines, the low portion of the first lifting pin 310 can the lower surface 100c of haptoreaction room 100.That is, bar 314 due to the first lifting pin 310 has the length of the length of the main body 324 being greater than the second lifting pin 320, therefore, when substrate support 200 declines, the lower surface of the bar 314 of the first lifting pin 310 can the lower surface 100c of first haptoreaction room 100.Herein, due to after the lower surface 100c of the first lifting pin 310 haptoreaction room 100 main body 324 of the second lifting pin 320 around the bar 312 of the first lifting pin 310, therefore bar 312 not tiltable and also can not the inner side of contact through hole 220 to prevent the first mould pin 310 damaged.
With reference to figure 6, when substrate support 200 declines continuously after the lower surface 100c of the low portion haptoreaction room 100 of the first lifting pin 310, the low portion of the main body 324 of the second lifting pin 320 can the lower surface 100c of haptoreaction room 100, and the first head 312 of the first lifting pin 310 can project upwards from the surface of substrate support 200.That is, when comparing with the second lifting pin 320, first the first lifting pin 310 can be given prominence to from the top surface of substrate support 200.Herein, because the second lifting pin 320 declines continuously, therefore can perform the first lifting pin 310 relative to the decline relative to substrate support 200 of the rising of substrate support 200 and the second lifting pin 320 simultaneously.And, because the lower surface 100c of the second lifting pin 320 haptoreaction room 100 is simultaneously around the first lifting pin 310, therefore the first lifting pin 310 not tiltable.
With reference to figure 7, when substrate support 200 declines continuously, a part (namely, a part for head 322 and main body 324) for the second lifting pin 320 can project upwards from substrate support 200.That is, the first lifting pin 310 and the second lifting pin 320 can one after the other be given prominence to from the top surface of substrate support 200.
As described above, the outside of the second lifting pin 320, second lifting pin 320 around the first lifting pin 310 of support substrates 10 can be comprised according to the lifting pin sub-assembly of one exemplary embodiment.And, raise because the second lifting pin 320 is vertical together with the first lifting pin 310, even if the therefore lower surface 100c of the first lifting pin 310 haptoreaction room 100, the also not tiltable and also can not contact the inner surface of the through hole of substrate support 200 of the first lifting pin 310.Therefore, it can prevent the first lifting pin 310 from tilting and therefore be applied to its pressure damage.The situation that wherein substrate S is separated with substrate support 200 after substrate S is supported by the first lifting pin 310 is described in the present example.But for supporting institute load substrates S, the second lifting pin 320 and the first lifting pin 310 one after the other can move up after substrate S is supported by the first lifting pin 310 outstanding from substrate support 200, and then substrate support 200 moves up.Herein, the second lifting pin 320 can be performed relative to the decline relative to substrate support 200 of the rising of substrate support 200 and the first lifting pin 310 simultaneously.
The lifting pin sub-assembly 300 according to one exemplary embodiment can be revised in every way.Still with reference to figure 8 to 11, various embodiment is described.
Fig. 8 is the partial cross sectional view of graphic extension according to the couple state between the lifting pin sub-assembly of another one exemplary embodiment and substrate support.Lubrication unit 355 can be placed in inside the through hole 220 of substrate support 200 further.That is, be located hole (displaying) and can be defined in inside the through hole 220 of substrate support 200, and the lubrication unit 335 with ball shape can be located in hole through providing at least one making lubrication unit 335 to be inserted partially into.Owing to providing lubrication unit 335, therefore the second lifting pin 320 can not contact through hole 220 inner surface with more reposefully rise or decline.
And according in the lifting pin sub-assembly 300 of another one exemplary embodiment, as illustrated in Fig. 9, contact component 340 can be placed on the low portion (namely, the low portion of bar 314) of the first lifting pin 310.Contact component 340 can have the width of the width of the bar 314 being greater than the first lifting pin 310.For example, contact component 340 can have the width of the width of the main body 324 being equal to or greater than the second lifting pin 320.Contact component 340 can be formed by the material of those materials of the first head 312 and bar 314 that are different from the first lifting pin 310.That is, at least one part of contact component 340 can form absorb impulsive force when the lower surface 100c of contact component 340 haptoreaction room 100 and prevent particle from occurring by polymeric material.Contact component 340 can when substrate support 200 declines the lower surface 100c of haptoreaction room 100.Herein, owing to providing contact component 340, therefore the center of gravity of the first lifting pin 310 can reduce.Therefore, when the first lifting pin 310 moves down, contact component 340 can be guided the first lifting pin 310 and be made the first lifting pin 310 vertically movement.
And according in the lifting pin sub-assembly 300 of another one exemplary embodiment, as illustrated in fig. 10, contact component 350 can be placed on the low portion (namely, the low portion of main body 324) of the second lifting pin 320.Herein, contact component 350 can have the width of the width of the main body 324 being greater than the second lifting pin 320.Contact component 350 can be formed by the material of those materials being different from the second head 322 and main body 324.For example, at least one part of contact component 350 can form absorb impulsive force when the lower surface 100c of contact component 350 haptoreaction room 100 and prevent particle from occurring by polymeric material.In lifting pin sub-assembly 300, when substrate support 200 declines, the low portion of the first lifting pin 310 can the lower surface 100c of first haptoreaction room 100, and be then placed in contact component 350 on the low portion of the second lifting pin 320 can the lower surface 100c of haptoreaction room 100.Herein, owing to providing contact component 350, therefore the center of gravity of the second lifting pin 320 can reduce.Therefore, the second lifting pin 320 can move down when not rocking.That is, the second lifting pin 320 can plumbness move down.
As illustrated in Figure 11, substrate support 200 can comprise the protuberance 250 giving prominence to predetermined altitude from the low portion of substrate support 200 downwards.Herein, through hole can be defined in position identical at the through hole 220 with substrate support 200 in protuberance 250.Lubrication unit 337 can be placed between protuberance 250 and the second lifting pin 320 further in through hole.That is, be located hole (displaying) and can be defined in inside the through hole of protuberance 250, and at least one that the lubrication unit 337 with ball shape can be provided to make lubrication unit 335 is inserted partially into and is located in hole.Owing to providing lubrication unit 337, therefore the second lifting pin 320 can not contact the inner surface of protuberance 250 to rise more reposefully or to decline.
According in the lifting pin sub-assembly of various embodiment, the second lifting pin can through providing with the outside of the first lifting pin around its at least one part support substrates, and the first lifting pin raises by the second lifting pin.And the second lifting pin raises by the through hole of substrate support.When the lower surface of the first molding pin contacts reative cell, because the second lifting pin is around the first lifting pin, therefore the first lifting pin not tiltable and the inner surface of the through hole of substrate support can not be contacted.
Therefore, the damage of lifting pin can be prevented to prevent the assembly of substrate and substrate-treating apparatus damaged.Therefore, the replacement cycle of lifting pin can through extending to improve productivity ratio.
As described above, about above embodiments specifically describing technical concept of the present invention, but it should be noted that and only provide previous embodiment and unrestricted the present invention for graphic extension.Various embodiment through providing to allow those skilled in the art to understand scope of the present invention, but can the present invention is not limited thereto.
Claims (25)
1. a lifting pin sub-assembly, it comprises:
First lifting pin, the lower surface of its at least one part support substrates, described first lifting pin can raise; And
Second lifting pin, it is in order to guide described first lifting pin, and described second lifting pin is raised by substrate support.
2. lifting pin sub-assembly according to claim 1, the section of the wherein described rising of described first lifting pin of described second lifting pin guiding is wherein greater than the thickness of described substrate support.
3. a lifting pin sub-assembly, it comprises:
First lifting pin, the lower surface of its at least one part support substrates, described first lifting pin can raise; And
Second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to substrate support.
4. lifting pin sub-assembly according to claim 3, the section of the wherein described rising of described first lifting pin of described second lifting pin guiding is wherein greater than the thickness of described substrate support.
5. the lifting pin sub-assembly according to Claim 1-3, first the first lifting pin described in wherein when comparing with described second lifting pin is given prominence to from the top surface of described substrate support.
6. the lifting pin sub-assembly according to Claim 1-3, wherein said first lifting pin and described second lifting pin sequentially outstanding from the top surface of described substrate support.
7. the lifting pin sub-assembly according to Claim 1-3, wherein performs described first lifting pin rising progressively and described second lifting pin falling progressively relative to described substrate support relative to described substrate support simultaneously.
8. the lifting pin sub-assembly according to Claim 1-3, wherein performs described first lifting pin falling progressively and described second lifting pin rising progressively relative to described substrate support relative to described substrate support simultaneously.
9. the lifting pin sub-assembly according to Claim 1-3, it comprises at least one first lubrication unit between outer surface and the inner surface of described second lifting pin being placed in described first lifting pin further.
10. lifting pin sub-assembly according to claim 9, it comprises at least one second lubrication unit be placed between described second lifting pin and the through hole of described substrate support further.
11. lifting pin sub-assemblies according to Claim 1-3, its comprise further be placed in described first lifting pin low portion on and there is the contact component of the length of the diameter being greater than described first lifting pin.
12. lifting pin sub-assemblies according to Claim 1-3, its comprise further be placed in described second lifting pin low portion on and there is the contact component of the width of the width of the main body being greater than described second lifting pin.
13. lifting pin sub-assemblies according to Claim 1-3, at least one part from conductive materials of wherein said second lifting pin or insulating material are formed.
14. 1 kinds of lifting pin sub-assemblies, it comprises:
Substrate support;
First lifting pin, it is configured to support the substrate be seated on described substrate support, and described first lifting pin can raise relative to described substrate support;
First lifting pin guide member, it is configured to the described rising of guiding described first lifting pin, and described first lifting pin guide member can raise relative to described substrate support.
15. lifting pin sub-assemblies according to claim 14, it comprises the second lifting pin guide member being configured to the described rising of guiding described first lifting pin guide member further, and described second lifting pin guide member is placed between described substrate support and the first lifting pin guide member.
16. lifting pin sub-assemblies according to claim 14, the section of the wherein described rising of described first lifting pin of described first lifting pin guide member guiding is wherein greater than the thickness of described substrate support.
17. lifting pin sub-assemblies according to claim 14, wherein when comparing with described first lifting pin guide member, first described first lifting pin is given prominence to from the top surface of described substrate support.
18. lifting pin sub-assemblies according to claim 14, wherein said first lifting pin and described first lifting pin guide member sequentially outstanding from the top surface of described substrate support.
19. lifting pin sub-assemblies according to claim 14, wherein perform described first lifting pin rising progressively and described first lifting pin guide member falling progressively relative to described substrate support relative to described substrate support simultaneously.
20. lifting pin sub-assemblies according to claim 14, wherein perform described first lifting pin falling progressively and described first lifting pin guide member rising progressively relative to described substrate support relative to described substrate support simultaneously.
21. lifting pin sub-assemblies according to claim 14, wherein perform described first lifting pin guide member relative to rising progressively described in described substrate support and the falling progressively of described substrate support simultaneously.
22. 1 kinds of substrate-treating apparatus, it comprises:
Reative cell;
Substrate support, it is placed in support substrates in described reative cell, and described substrate support has multiple through hole; And
Multiple lifting pin sub-assembly, its described through hole by described substrate support to support the part of described substrate,
Each in wherein said lifting pin sub-assembly comprises:
First lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And
Second lifting pin, it is configured to the described rising of guiding described first lifting pin, and described second lifting pin raises by each in described through hole.
23. 1 kinds of substrate-treating apparatus, it comprises:
Reative cell;
Substrate support, it is placed in support substrates in described reative cell, and described substrate support has multiple through hole; And
Multiple lifting pin sub-assembly, its described through hole by described substrate support to support the part of described substrate,
Each in wherein said lifting pin sub-assembly comprises:
First lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And
Second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to described substrate support.
24. 1 kinds for substrate and described substrate being located the method that substrate support is thereon separated, described method comprises:
Preparation feedback room;
Preparation to be placed in described reative cell and to have the substrate support of multiple through hole;
Prepare by multiple lifting pin sub-assemblies of the described through hole of described substrate support to support the part of described substrate;
Described substrate support and described multiple lifting pin sub-assembly is allowed to fall progressively;
The inwall of reative cell described in the first molding pin contacts allowing each in described multiple lifting pin sub-assembly;
Be separated with described substrate support by described first lifting pin at least one part by described substrate; And
The second lifting pin of each in described multiple lifting pin sub-assembly is allowed to contact the described inwall of described reative cell,
Wherein said lifting pin sub-assembly comprises:
Described first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And
Described second lifting pin, it is configured to the described rising of guiding described first lifting pin, and described second lifting pin can raise relative to described substrate support.
25. 1 kinds for substrate and described substrate being located the method that substrate support is thereon separated, described method comprises:
Preparation feedback room;
Preparation to be placed in described reative cell and to have the substrate support of multiple through hole;
Prepare by multiple lifting pin sub-assemblies of the described through hole of described substrate support to support the part of described substrate;
Described substrate support and described multiple lifting pin sub-assembly is allowed to fall progressively;
The inwall of reative cell described in the first molding pin contacts allowing each in described multiple lifting pin sub-assembly;
Be separated with described substrate support by described first lifting pin at least one part by described substrate; And
The second lifting pin of each in described multiple lifting pin sub-assembly is allowed to contact the described inwall of described reative cell,
Wherein said lifting pin sub-assembly comprises:
Described first lifting pin, its at least one part supports the lower surface of described substrate, and described first lifting pin can raise; And
Described second lifting pin, it is configured to the part holding described first lifting pin when described first lifting pin raises, and described second lifting pin can raise relative to described substrate support.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130158350A KR102215641B1 (en) | 2013-12-18 | 2013-12-18 | Lift pin assembly and substrate processing apparatus having the same |
| KR10-2013-0158350 | 2013-12-18 |
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| CN104733367A true CN104733367A (en) | 2015-06-24 |
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| KR (1) | KR102215641B1 (en) |
| CN (1) | CN104733367B (en) |
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| CN110073484B (en) * | 2017-11-21 | 2023-10-17 | 株式会社爱发科 | Lifting pin and vacuum processing device |
| JP6733966B2 (en) * | 2018-07-09 | 2020-08-05 | Ａｉメカテック株式会社 | Board assembly apparatus and board assembly method |
| KR20230082405A (en) * | 2021-12-01 | 2023-06-08 | 주식회사 유진테크 | Lift pin protection assembly and substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941318A (en) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | Substrate placing mechanism and substrate processing device |
| KR20100081285A (en) * | 2010-05-28 | 2010-07-14 | 주성엔지니어링(주) | Lift pin assembly |
| US20100212832A1 (en) * | 2005-12-28 | 2010-08-26 | Sharp Kabushiki Kaisha | Stage device and plasma treatment apparatus |
| WO2011009007A2 (en) * | 2009-07-15 | 2011-01-20 | Applied Materials, Inc. | Improved lift pin guides |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4627392B2 (en) * | 2001-09-26 | 2011-02-09 | 株式会社アルバック | Vacuum processing apparatus and vacuum processing method |
| KR20070071418A (en) * | 2005-12-30 | 2007-07-04 | 주성엔지니어링(주) | Lift pin assembly |
| CN100477147C (en) * | 2006-03-16 | 2009-04-08 | 东京毅力科创株式会社 | Substrate table and substrate processing apparatus |
| KR20080015194A (en) * | 2006-08-14 | 2008-02-19 | 동부일렉트로닉스 주식회사 | Two stage pin structure of wafer stage and wafer loading method |
| JP5141520B2 (en) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | Plasma processing equipment |
-
2013
- 2013-12-18 KR KR1020130158350A patent/KR102215641B1/en active IP Right Grant
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941318A (en) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | Substrate placing mechanism and substrate processing device |
| US20100212832A1 (en) * | 2005-12-28 | 2010-08-26 | Sharp Kabushiki Kaisha | Stage device and plasma treatment apparatus |
| WO2011009007A2 (en) * | 2009-07-15 | 2011-01-20 | Applied Materials, Inc. | Improved lift pin guides |
| WO2011009007A3 (en) * | 2009-07-15 | 2011-07-28 | Applied Materials, Inc. | Improved lift pin guides |
| KR20100081285A (en) * | 2010-05-28 | 2010-07-14 | 주성엔지니어링(주) | Lift pin assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150071382A (en) | 2015-06-26 |
| TW201528415A (en) | 2015-07-16 |
| TWI686885B (en) | 2020-03-01 |
| KR102215641B1 (en) | 2021-02-16 |
| CN104733367B (en) | 2020-08-21 |
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