CN104733155B - Chip electronic component and its manufacture method - Google Patents
Chip electronic component and its manufacture method Download PDFInfo
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- CN104733155B CN104733155B CN201410186896.7A CN201410186896A CN104733155B CN 104733155 B CN104733155 B CN 104733155B CN 201410186896 A CN201410186896 A CN 201410186896A CN 104733155 B CN104733155 B CN 104733155B
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- coil pattern
- width
- loop portion
- interior loop
- coil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/006—Details of transformers or inductances, in general with special arrangement or spacing of turns of the winding(s), e.g. to produce desired self-resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/33—Arrangements for noise damping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/06—Coil winding
Abstract
Provide a kind of chip electronic component and its manufacture method, and more particularly, it is a kind of have the thickness of coil is increased by the width relative to coil the chip electronic component and its manufacture method of short-circuit generation between coiler part and the interior lines coil structures for realizing high depth-width ratio (AR) can be prevented.
Description
This application claims Korea Spro 10-2013-0158080 submitted on December 18th, 2013 in Korean Intellectual Property Office
This is incorporated herein by reference in the rights and interests of state's patent application, the disclosure of this application.
Technical field
This disclosure relates to a kind of chip electronic component and its manufacture method.
Background technology
Inductor as one of chip electronic component is that electronic circuit is formed together with resistor and capacitor to remove
The representative passive element of noise.Such inductor is combined using electromagnetic property with capacitor to form amplification special frequency band
The resonance circuit of signal, filter circuit etc..
Recently, due to the miniaturization and slimming of the information technologies such as various communicators, display device (IT) device
It is accelerated, to for by various miniaturization of components such as the inductor, capacitor, transistor applied to IT devices and slim
The research of the technology of change is constantly carried out.Inductor also promptly by with small size, high density and can from
The piece of dynamic surface installation is substituted, and coil pattern (circuit diagram is administered to by mictomagnetism powder and resin and by the mixture
Case is formed in the upper and lower surface of film-insulated substrate by plating) enter come the exploitation of the thin inductance device formed
OK.
Direct current (DC) resistance Rdc as the main performance of inductor can subtract according to the increase of the cross-sectional area of coil
It is small.Therefore, in order to reduce D.C. resistance Rdc and increase inductance, it is necessary to increase the cross-sectional area of the interior loop of inductor.
As the method for the cross-sectional area of increase coil, two methods be present, i.e. increase method and the increasing of the width of coil
The method of the thickness of big coil.
In the case of the width of increase coil, the possibility of short circuit can be produced between coiler part to be increased, and inductance
The number of turn that can be realized in device piece can be restricted, so as to which the region for causing magnetic material to occupy reduces so that can cause efficiency
Reduction, and the realization of high inductor product can be restricted.
Therefore, it has been necessary to the interior loop of thin inductance device has high depth-width ratio (AR) by increasing the thickness of coil
Structure.The depth-width ratio (AR) of interior loop represents the value obtained by the thickness of coil divided by the width of coil.Therefore, coil is worked as
When the incrementss of thickness are more than the incrementss of coil width, depth-width ratio (AR) can increase.
In order to realize the high depth-width ratio (AR) of interior loop, it is necessary to the growth of suppression coil in the direction of the width, and need
Accelerate the growth of coil in a thickness direction.
According to prior art, when using plating agent execution pattern coating method is hindered, in order to form the line with big thickness
Circle, resistance plating agent need have big thickness.However, in this case, because in order to maintain the shape of resistance plating agent, resistance plating agent needs
There is predetermined width or bigger width, therefore the spacing between coiler part can increase.
In addition, according to prior art perform galvanoplastic when, due to coil in the width direction with its thickness direction
The isotropic growth phenomenon of growth, therefore short circuit occurs between coiler part and realizes that high depth-width ratio (AR) can have limit
System.
【Prior art literature】
(patent document 1) Japanese Patent Publication publication No. 2006-278479
The content of the invention
The one side of the disclosure can provide a kind of chip electronic component and its manufacture method, and the chip electronic component has logical
Cross and increase the thickness of coil relative to the width of coil and short-circuit generation between coiler part can be prevented and realize high height
The wide interior lines coil structures than (AR).
According to the one side of the disclosure, a kind of chip electronic component may include：Magnetic body, including insulated substrate；Interior lines
Circle portion, formed at least one surface of insulated substrate；And external electrode, form at least one end surfaces in magnetic body
On, and interior loop portion is connected to, wherein, interior loop portion includes：First coil pattern, is formed on insulated substrate；And second
Coil pattern, formed on first coil pattern, the second coil pattern has the width smaller than the width of first coil pattern.
Interior loop portion may also include tertiary coil pattern, and tertiary coil pattern is formed in first coil pattern and the second coil
On pattern and cover the second coil pattern.
The width of second coil pattern can be 0.5 times to 0.9 times of first coil pattern width.
The width of first coil pattern can be 80 μm to 120 μm.
The width of second coil pattern can be 40 μm to 60 μm.
Spacing between the coiler part in interior loop portion can be 5 μm to 20 μm.
Interior loop portion can be by from by silver-colored (Ag), palladium (Pd), aluminium (Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu) and platinum
(Pt) the one or more of formation selected in the group of composition.
First coil pattern and the second coil pattern can be formed by identical metal.
Interior loop portion can have 1.1 or bigger depth-width ratio.
According to another aspect of the present disclosure, a kind of manufacture method of chip electronic component may include following step：Insulating
Interior loop portion is formed at least one surface of substrate；Stacked on the upper and lower part of the insulated substrate formed with interior loop portion
Magnetosphere forms magnetic body；And external electrode is formed at least one end surfaces of magnetic body to be connected to interior loop
Portion, wherein, in the step of forming interior loop portion, first coil pattern is formed on insulated substrate, and in first coil pattern
It is upper to form the second coil pattern with the width smaller than the width of first coil pattern.
The step of forming interior loop portion may include：The first resistance plating agent with opening, the first resistance are formed on insulated substrate
The opening of plating agent is used to form first coil pattern；First Line is formed by filling the opening for being used to form first coil pattern
Circular pattern；The second resistance plating agent with opening is formed in the first resistance plating agent and first coil pattern, to expose First Line loop graph
Case, the opening of the second resistance plating agent are used to form the second coil pattern；By fill be used for formed the second coil pattern opening come
Form the second coil pattern；And the first resistance plating agent and the second resistance plating agent are removed, for forming the opening tool of the second coil pattern
There is the width smaller than the width of the opening for forming first coil pattern.
The width of opening for forming the second coil pattern can be for the width for the opening for forming first coil pattern
0.5 times to 0.9 times.
In the step of forming interior loop portion, plating can be performed on first coil pattern to form the second circuit diagram of covering
The tertiary coil pattern of case.
The width of first coil pattern can be 80 μm to 120 μm.
The width of second coil pattern can be 40 μm to 60 μm.
Spacing between the coiler part in interior loop portion can be 5 μm to 20 μm.
It can be formed with from by silver-colored (Ag), palladium (Pd), aluminium (Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu) and platinum (Pt)
Group in select it is one or more of it is metal filled be used for form the opening of first coil pattern and for forming the second coil
The opening of pattern.
Brief description of the drawings
Pass through the detailed description carried out below in conjunction with the accompanying drawings, above and other aspect, feature and other advantages of the disclosure
It will be more clearly understood from, in the accompanying drawings：
Fig. 1 is the perspective schematic view for showing the chip electronic component according to the exemplary embodiment of the disclosure, wherein showing
Interior loop portion is gone out；
Fig. 2 is the sectional view along Fig. 1 line I-I ' interceptions；
Fig. 3 is Fig. 2 part A schematic expanded view；
Fig. 4 is the artwork for the manufacture method for showing the chip electronic component according to the exemplary embodiment of the disclosure；With
And
Fig. 5 to Figure 10 is the manufacturer for sequentially illustrating the chip electronic component according to the exemplary embodiment of the disclosure
The figure of method.
Embodiment
The exemplary embodiment of the disclosure is described in detail now with reference to accompanying drawing.
However, the disclosure can be come for example, and should not be construed as being limited to herein in many different forms
The specific embodiment of elaboration.On the contrary, these embodiments are provided so that the disclosure will be thoroughly and completely, and will be to ability
Field technique personnel fully pass on the scope of the present disclosure.
In the accompanying drawings, for the sake of clarity, the shape and size of element can be exaggerated, identical reference will be used for all the time
Indicate same or analogous element.
Chip electronic component
Hereinafter, the chip electronic component by description according to the exemplary embodiment of the disclosure.Specifically, will describe thin
Type inductor, but disclosure not limited to this.
Fig. 1 is the perspective schematic view for showing the chip electronic component according to the exemplary embodiment of the disclosure, wherein showing
Interior loop portion is gone out.Fig. 2 is the sectional view along Fig. 1 line I-I ' interceptions.Fig. 3 is Fig. 2 part A schematic expanded view.
Referring to figs. 1 to Fig. 3, as the example of chip electronic component, disclose thin in the power line of power circuit
Type inductor 100.As chip electronic component, in addition to chip inductor, chip magnetic bead, chip filter can be suitably used
Ripple device etc..
Thin inductance device 100 may include magnetic body 50, insulated substrate 20, interior loop portion 40 and external electrode 80.
Magnetic body 50 can form the outward appearance of thin inductance device 100, and can be by that can show any material shape of magnetic
Into.For example, magnetic body 50 can be formed by filling Ferrite Material or Metal Substrate soft magnetic materials.Ferrite Material can be
Mn-Zn based ferrites, Ni-Zn based ferrites, Ni-Zn-Cu based ferrites, Mn-Mg based ferrites, Ba based ferrites or Li base iron
Oxysome etc..Metal Substrate soft magnetic materials can be Fe-Si-B-Cr base amorphous metal powder, but not limited to this.
Magnetic body 50 can have hexahedral shape.In order to clearly describe the exemplary embodiment of the disclosure, will define
Hexahedral direction.L, W and T shown in Fig. 1 refer respectively to the length direction, width and thickness direction of magnetic body.
Magnetic body 50 can have the rectangular shape that its length is more than its width.
The insulated substrate 20 formed in magnetic body 50 can be formed by film, for example, printed circuit board (PCB) (PCB), iron
Ferrite substrate, Metal Substrate soft magnetism substrate etc..
Insulated substrate 20 can have through hole therethrough, and the through hole can be soft by such as ferrite or Metal Substrate
The same material of magnetic material etc., to form core.The core of filling magnetic material can be formed, therefore increases inductance L.
Interior loop portion 40 with coil pattern may be formed on a surface of insulated substrate 20, and have coil pattern
Interior loop portion 40 also may be formed on another surface of insulated substrate 20.
Interior loop portion 40 may include the coil pattern formed with spiral shape, formed on a surface of insulated substrate 20 and
Interior loop portion 40 on another surface can be electrically connected to each other by the pathway electrode 45 formed in insulated substrate 20.
Each interior loop portion 40 may include to be formed first coil pattern 41 on insulated substrate 20, be formed in first coil
The second coil pattern 42 on pattern 41 and formed in the coil pattern 42 of first coil pattern 41 and second and cover second
The tertiary coil pattern 43 of coil pattern 42, the second coil pattern 42 can have smaller than the width of first coil pattern 41 wide
Degree.For example, tertiary coil pattern 43 coats top surface and the side surface of the second coil pattern 42.
First coil pattern 41 can be plated by forming the resistance of patterning on insulated substrate 20 and agent and filled with conducting metal
It is open to be formed.
, can be by forming the second resistance plating agent on first coil pattern 41 with exposure after the formation of first coil pattern 41
First coil pattern 41, the opening on the first coil pattern being exposed then is filled with conducting metal to form second
Coil pattern 42.
In this case, the second coil pattern 42 can be formed as having smaller than the width w1 of first coil pattern 41
Width w2, tertiary coil pattern 43 can be formed in the coil pattern 42 of first coil pattern 41 and second to cover the second circuit diagram
Case 42 so that the growth of coil in the width direction can be suppressed, and the growth of coil in the thickness direction thereof can be accelerated,
Interior loop portion 40 with high depth-width ratio (AR) can be realized with this.
Plating can be performed to form the 3rd as Seed Layer by using the coil pattern 42 of first coil pattern 41 and second
Coil pattern 43.
The width w2 of second coil pattern 42 can be 0.5 to 0.9 times of the width w1 of first coil pattern 41.In the second line
In the case that the width w2 of circular pattern 42 is less than 0.5 times of the width w1 of first coil pattern 41, realization has high depth-width ratio
(AR) coil can have limitation, and exceed the width w1 of first coil pattern 41 in the width w2 of the second coil pattern 42
In the case of 0.9 times, tertiary coil pattern can cover first coil pattern and the second coil pattern, so as to cause isotropism to be given birth to
It is long so that short circuit to occur between coiler part, and depth-width ratio (AR) can reduce.
The width w1 of first coil pattern 41 can be 80 μm to 120 μm, and the width w2 of the second coil pattern 42 can be 40 μm
To 60 μm.
In addition, the spacing d1 between the coiler part in interior loop portion 40 can be 5 μm to 20 μm.
Interior loop portion 40 including first coil pattern 41, the second coil pattern 42 and tertiary coil pattern 43 can by with
The metal of excellent conductivity is formed, for example, by silver-colored (Ag), palladium (Pd), aluminium (Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu)
Or the formation such as platinum (Pt) or their alloy.
First coil pattern 41, the second coil pattern 42 and tertiary coil pattern 43 can be formed by same metal, it is preferable that
It can be formed by copper (Cu).
As described above, interior loop portion 40 may include first coil pattern 41, with smaller than the width of first coil pattern 41
Width the second coil pattern 42 and formed in the coil pattern 42 of first coil pattern 41 and second to cover the second line
The tertiary coil pattern 43 of circular pattern 42, so as to realize high depth-width ratio (AR), for example, 1.1 or bigger depth-width ratio (AR) (T/
W)。
Interior loop portion 40 can be coated by insulating barrier 30.
Insulating barrier 30 can be by the methods known in the art such as exposure of silk screen print method, photoresist (PR) and aobvious
Image method, spraying process etc. are formed.Interior loop portion 40 can be coated by insulating barrier 30 so that it is not directly contacted with composition magnetic body
50 magnetic material.
One end in the interior loop portion 40 formed on a surface of insulated substrate 20 can be exposed to magnetic body 50
In the longitudinal direction end surfaces, and form an end in interior loop portion 40 on another surface of insulated substrate 20
Portion can be exposed to another end surfaces in the longitudinal direction of magnetic body 50.
External electrode 80 can be respectively formed in its longitudinal direction two end surfaces of magnetic body 50, to be connected to
Exposed to the interior loop portion 40 of in its longitudinal direction two end surfaces of magnetic body 50.External electrode 80 may extend to magnetic
In the thickness direction thereof two surfaces of main body 50 and/or in the width direction two surfaces of magnetic body 50.
External electrode 80 can be formed by the metal with excellent conductivity, for example, by nickel (Ni), copper (Cu), tin (Sn), silver
Etc. (Ag) individually a kind of or their alloy etc. is formed.
The manufacture method of chip electronic component
Fig. 4 is the artwork for the manufacture method for showing the chip electronic component according to the exemplary embodiment of the disclosure.Fig. 5
It is the figure for the manufacture method for sequentially illustrating the chip electronic component according to the exemplary embodiment of the disclosure to Figure 10.
Reference picture 4, first, interior loop portion 40 can be formed at least one surface of insulated substrate 20.
Insulated substrate 20 is not particularly limited, but can be such as PCB, ferrite substrate, Metal Substrate soft magnetism substrate, absolutely
Edge substrate 20 can have 40 μm to 100 μm of thickness.
Then, description is formed to the process in interior loop portion 40.Reference picture 5, it can be formed on insulated substrate 20 with being used for
Form the first resistance plating agent 60 of the opening 61 of first coil pattern.
First resistance plating agent 60 can be common photosensitive inhibitor film, dry film inhibitor etc., but not be specifically limited to
This.
Reference picture 6, can be by performing electroplating technology etc. with conduction in the opening 61 for forming first coil pattern
Constitutive promoter forms first coil pattern 41.
First coil pattern 41 can be formed by the metal with excellent conductivity, for example, by silver-colored (Ag), palladium (Pb), aluminium
(Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu) or platinum (Pt), their mixture etc. are formed.
First coil pattern 41 can have 80 μm to 120 μm of width.
Reference picture 7, can be formed in the first resistance plating agent 60 and first coil pattern 41 has for forming the second circuit diagram
Second resistance plating agent 70 of the opening 71 of case.
Second resistance plating agent 70 can be common photosensitive inhibitor film, dry film inhibitor etc., but not limited to this.
First coil pattern 41 can be exposed by the opening 71 for forming the second coil pattern.Here, for being formed
The opening 71 of second coil pattern can have than the width of first coil pattern 41 or for forming opening for first coil pattern
The small width of mouthfuls 61 width.
Reference picture 8, can be by performing electroplating technology etc. with conduction in the opening 71 for forming the second coil pattern
Constitutive promoter forms the second coil pattern 42.
Second coil pattern 42 can be formed by the metal with excellent conductivity, for example, by silver-colored (Ag), palladium (Pb), aluminium
(Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu) or platinum (Pt), their mixture etc. are formed.It is highly preferred that the second coil
Pattern 42 can be formed by the metal identical metal with first coil pattern 41, to improve the connectivity between coil pattern and lead
Electrically.
The width of second coil pattern 42 is smaller than the width of first coil pattern 41.For example, the second coil pattern 42
Width can be 0.5 to 0.9 times of the width of first coil pattern 41.It is less than first coil in the width w2 of the second coil pattern 42
In the case of 0.5 times of the width w1 of pattern 41, realize that the coil with high depth-width ratio (AR) can have limitation, and second
In the case that the width w2 of coil pattern 42 exceedes 0.9 times of the width w1 of first coil pattern 41, tertiary coil pattern can cover
Lid first coil pattern and the second coil pattern, so as to cause isotropic growth so that short circuit can occur between coiler part,
And depth-width ratio (AR) can reduce.
Second coil pattern 42 can have 40 μm to 60 μm of width.
Reference picture 9, it can remove the first resistance plating resistance plating agent 70 of agent 60 and second.
Reference picture 10, the of the second coil pattern 42 of covering can be formed by performing plating on first coil pattern 41
Three-winding pattern 43.
First coil pattern 41 and the second coil pattern 42 can be used to form tertiary coil pattern 43 as Seed Layer.
Second coil pattern 42 is formed as to have the width smaller than the width of first coil pattern 41, in First Line loop graph
Tertiary coil pattern 43 is formed in the coil pattern 42 of case 41 and second to cover the second coil pattern 42 so that coil is in its width
Growth on direction can be suppressed, and the growth of coil in the thickness direction thereof can be accelerated, and can be realized with high height with this
The wide interior loop portion 40 than (AR).
Tertiary coil pattern 43 can be formed by the metal with excellent conductivity, for example, by silver-colored (Ag), palladium (Pb), aluminium
(Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu) or platinum (Pt), their mixture etc. are formed.It is highly preferred that tertiary coil
Pattern 43 can be by forming, to improve coil pattern with the metal identical metal of the coil pattern 42 of first coil pattern 41 and second
Between connectivity and electric conductivity.
What is be formed as described above includes the interior of first coil pattern 41, the second coil pattern 42 and tertiary coil pattern 43
Coil portion 40 can have 1.1 or bigger depth-width ratio (AR) (T/W), and the spacing between the coiler part in interior loop portion 40 can be
5 μm to 20 μm.
The hole can be filled to form pathway electrode by forming Kong Bingyong conductive materials in a part for insulated substrate 20
45, the interior loop portion 40 formed on a surface of insulated substrate 20 and another surface can be electric each other by pathway electrode 45
Connection.
Can be by performing bore process, Laser Processing, blasting craft or punching on the core of insulated substrate 20
Technique etc. penetrates the hole of insulated substrate 20 to be formed in the core of insulated substrate 20.
After interior loop portion 40 is formed, the insulating barrier 30 in cladding interior loop portion 40 can be formed.Such as screen printing can be passed through
The methods known in the art such as brush method, the exposed and developed method of photoresist (PR), spraying process form insulating barrier 30, but
The disclosure is not limited to this.
Next, can be formed on the upper and lower part of the insulated substrate 20 in interior loop portion 40 stack magnetosphere with
Form magnetic body 50.
By stacking magnetosphere on two surfaces of insulated substrate 20 and heap can be suppressed by laminating or isostatic pressing method
Folded magnetosphere forms magnetic body 50.In this case, core can be formed by following manner, i.e. magnetic material can be used
Fill hole.
Then, external electrode 80 can be formed to be connected to the interior loop portion at least one end surfaces for being exposed to magnetic body 50
40。
External electrode 80 can be formed by the cream comprising metal (having excellent conductance), for example, by including nickel (Ni), copper
(Cu), tin (Sn) or the conductive paste of silver-colored (Ag) or their alloy are formed.In addition to print process, it can pass through according to the shape of external electrode
Infusion process etc. forms external electrode 80.
Other spies repeated with the feature of the above-mentioned chip electronic component of the foregoing example embodiment according to the disclosure
Sign will be omitted.
As described above, the exemplary embodiment according to the disclosure, there is provided a kind of chip electronic component and its manufacture method,
The interior lines coil structures of the chip electronic component can prevent coil portion by the thickness of the width increase coil relative to coil
/ short-circuit generation simultaneously realizes high depth-width ratio (AR).
It is possible to increase the cross-sectional area of coil, can reduce direct current (DC) resistance (Rdc), and can improve inductance.
Although having been shown above and describing exemplary embodiment, will be apparent that for those skilled in the art,
In the case where not departing from the spirit and scope of the present disclosure being defined by the claims, may be modified and changed.
Claims (15)
1. a kind of chip electronic component, including：
Magnetic body, including insulated substrate；
Interior loop portion, formed at least one surface of insulated substrate；And
External electrode, formed at least one end surfaces of magnetic body, and be connected to interior loop portion,
Wherein, interior loop portion includes：
First coil pattern, is formed on insulated substrate；And
Second coil pattern, formed on first coil pattern,
Second coil pattern has the width smaller than the width of first coil pattern,
Wherein, interior loop portion also includes tertiary coil pattern, and tertiary coil pattern is formed in first coil pattern and the second coil
On pattern and cover the second coil pattern,
Wherein, the top surface of tertiary coil pattern contacts first coil pattern and the top surface of the second coil pattern and side table
Face,
Wherein, the interior loop portion is coated by insulating barrier,
Wherein, the insulating barrier contacts the side surface of the first coil pattern.
2. chip electronic component as claimed in claim 1, wherein, the width of the second coil pattern is the width of first coil pattern
0.5 times to 0.9 times of degree.
3. chip electronic component as claimed in claim 1, wherein, the width of first coil pattern is 80 μm to 120 μm.
4. chip electronic component as claimed in claim 1, wherein, the width of the second coil pattern is 40 μm to 60 μm.
5. chip electronic component as claimed in claim 1, wherein, the spacing between the coiler part in interior loop portion for 5 μm extremely
20μm。
6. chip electronic component as claimed in claim 1, wherein, interior loop portion by from by silver, palladium, aluminium, nickel, titanium, gold, copper and
The one or more of formation selected in the group of platinum composition.
7. chip electronic component as claimed in claim 1, wherein, first coil pattern and the second coil pattern are by identical gold
Category is formed.
8. chip electronic component as claimed in claim 1, wherein, interior loop portion has 1.1 or bigger depth-width ratio.
9. a kind of manufacture method of chip electronic component, comprises the steps：
Interior loop portion is formed at least one surface of insulated substrate；
Magnetosphere is stacked on the upper and lower part of the insulated substrate formed with interior loop portion to form magnetic body；And
External electrode is formed at least one end surfaces of magnetic body to be connected to interior loop portion,
Wherein, in the step of forming interior loop portion, first coil pattern is formed on insulated substrate, and in first coil pattern
It is upper to form the second coil pattern with the width smaller than the width of first coil pattern,
Wherein, in the step of forming interior loop portion, plating is performed on first coil pattern to form the second circuit diagram of covering
The tertiary coil pattern of case,
Wherein, the top surface of tertiary coil pattern contacts first coil pattern and the top surface of the second coil pattern and side table
Face,
Wherein, the interior loop portion is coated by insulating barrier,
Wherein, the insulating barrier contacts the side surface of the first coil pattern.
10. manufacture method as claimed in claim 9, wherein, the step of forming interior loop portion, includes：
The first resistance plating agent with opening is formed on insulated substrate, the opening of the first resistance plating agent is used to form First Line loop graph
Case；
First coil pattern is formed by filling the opening for being used to form first coil pattern；
The second resistance plating agent with opening is formed in the first resistance plating agent and first coil pattern, to expose first coil pattern,
The opening of second resistance plating agent is used to form the second coil pattern；
The second coil pattern is formed by filling the opening for being used to form the second coil pattern；And
The first resistance plating agent and the second resistance plating agent are removed,
Opening for forming the second coil pattern has the width smaller than the width of the opening for forming first coil pattern.
11. manufacture method as claimed in claim 10, wherein, it is to be used for for forming the width of opening of the second coil pattern
Form 0.5 times to 0.9 times of the width of the opening of first coil pattern.
12. manufacture method as claimed in claim 9, wherein, the width of first coil pattern is 80 μm to 120 μm.
13. manufacture method as claimed in claim 9, wherein, the width of the second coil pattern is 40 μm to 60 μm.
14. manufacture method as claimed in claim 9, wherein, the spacing between the coiler part in interior loop portion is 5 μm to 20 μ
m。
15. manufacture method as claimed in claim 10, wherein, with from the group being made up of silver, palladium, aluminium, nickel, titanium, gold, copper and platinum
Middle selection it is one or more of it is metal filled be used for form the opening of first coil pattern and for forming the second coil pattern
Opening.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130158080A KR101994726B1 (en) | 2013-12-18 | 2013-12-18 | Chip electronic component and manufacturing method thereof |
| KR10-2013-0158080 | 2013-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104733155A CN104733155A (en) | 2015-06-24 |
| CN104733155B true CN104733155B (en) | 2018-02-02 |
Family
ID=53456971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410186896.7A Active CN104733155B (en) | 2013-12-18 | 2014-05-05 | Chip electronic component and its manufacture method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6213996B2 (en) |
| KR (1) | KR101994726B1 (en) |
| CN (1) | CN104733155B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6825189B2 (en) | 2015-07-29 | 2021-02-03 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Coil parts and their manufacturing methods |
| KR101751117B1 (en) | 2015-07-31 | 2017-06-26 | 삼성전기주식회사 | Coil electronic part and manufacturing method thereof |
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| KR101762039B1 (en) | 2015-12-18 | 2017-07-26 | 삼성전기주식회사 | Coil component |
| KR101792364B1 (en) | 2015-12-18 | 2017-11-01 | 삼성전기주식회사 | Coil component and manufacturing method for the same |
| KR102281449B1 (en) * | 2015-12-18 | 2021-07-27 | 삼성전기주식회사 | Coil component and manufacturing method for the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104733155A (en) | 2015-06-24 |
| JP2015119158A (en) | 2015-06-25 |
| JP6213996B2 (en) | 2017-10-18 |
| KR101994726B1 (en) | 2019-07-01 |
| KR20150071266A (en) | 2015-06-26 |
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