CN104651949B - A kind of polycrystalline silicon texturing additive - Google Patents
A kind of polycrystalline silicon texturing additive Download PDFInfo
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- CN104651949B CN104651949B CN201510072360.7A CN201510072360A CN104651949B CN 104651949 B CN104651949 B CN 104651949B CN 201510072360 A CN201510072360 A CN 201510072360A CN 104651949 B CN104651949 B CN 104651949B
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- wool
- polycrystalline silicon
- making herbs
- silicon texturing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of polycrystalline silicon texturing additive, according to mass percent, including following components：Sodium citrate 0.08~0.8%, citric acid 1.0~2.5%, nonionic surfactant 0.03~0.07%, polyethylene glycol 0.08~0.8%, polyvinylpyrrolidone 0.1~1%, surplus is water.The polycrystalline silicon texturing additive prepared by using the present invention to carry out after sour making herbs into wool polysilicon chip, and obtained silicon chip surface is uniform, reflectivity reduction by 3~5%, cell conversion rate lifting 0.1~0.2%.
Description
Technical field
The present invention relates to polycrystalline silicon texturing technical field, more particularly to a kind of polycrystalline silicon texturing additive.
Background technology
Polysilicon solar cell accounts for 50% or so of global PV product populations, and the market share amount shared by it at present
Increase steadily will also be continued, but the universal battery conversion efficiency of polysilicon chip in the market is less than monocrystalline silicon piece battery, its
In one main reason is that lacking a kind of inexpensive efficient polysilicon making herbs into wool mode, good polysilicon making herbs into wool can be carried significantly
The absorptivity of high sunshine, reduces reflection, improves short circuit current flow, realizes the high conversion efficiency of cell photoelectric.
The general each diversity by alkali lye (KOH or NaOH) of monocrystaline silicon solar cell carries out making herbs into wool and obtains random
Pyramid structure, the crystalline phase randomness of polysilicon chip causes this technology to be extremely difficult to same effect on this material.At present
The acid etching of isotropy is that implementation is optimal in polycrystalline etching method, and minimum one of cost, is also the most widely used
A kind of method.But the sunken photosensitiveness of matte that this sour making herbs into wool is obtained is poor, and reflectivity is higher, about 25% or so, increase pit depth is again
Difficulty can be brought to follow-up process.And suitable additive is added in sour Woolen-making liquid, making herbs into wool effect can be greatly improved, is dropped
Antiradar reflectivity (D.H.Macdonald, A.Cuevas, M.J.Kerr, et al, Solar Energy, 2004,76,277-283；
Y.T.Cheng, J.J.Ho, S.Y.Tsai, et al, Solar Energy, 2011,85,87-94), will have great importance.
The content of the invention
It is an object of the present invention to overcome the above-mentioned technical problems, and to provide a kind of polycrystalline silicon texturing additive, the polycrystalline
Silicon wafer wool making additive application makes in the matte of polysilicon chip.The use of this flocking additive brings splendid moistened surface
Property, and make the bubble produced during making herbs into wool many and small, substantial amounts of micro-structural successfully is formed in polycrystalline making herbs into wool etch pit, is entered
One step improves the sunken photosensitiveness on surface, reduces reflectivity, improves cell photoelectric conversion efficiency.
The technical scheme for solving above-mentioned technical problem is as follows：
A kind of polycrystalline silicon texturing additive, according to mass percent, including following components：
Further, described nonionic surfactant is fluorine carbon surfactant, polysiloxane-based surface-active
Agent.It is preferred that fluorine carbon surfactant is nonionic surfactant.
Further, described molecular weight polyethylene glycol is 200~1000, preferably 600 and 1000.
Described water is deionized water.
A kind of Woolen-making liquid for polycrystalline silicon texturing, including polycrystalline silicon texturing additive and making herbs into wool acid solution, polycrystalline
The mass ratio of silicon wafer wool making additive and making herbs into wool acid solution is 0.2~0.7：100, making herbs into wool acid solution is the mixed of hydrofluoric acid and nitric acid
The mixed aqueous solution of Heshui solution or hydrofluoric acid and chromic acid.
A kind of method of polycrystalline silicon texturing, it is characterised in that surface wool manufacturing is carried out to polysilicon chip using Woolen-making liquid.
A kind of polycrystalline silicon texturing method, it is characterised in that comprise the following steps：
1) preparation of polycrystalline silicon texturing additive：By 0.08~0.8% sodium citrate, 1.0~2.5% lemon
Acid, 0.03~0.07% nonionic surfactant, 0.08~0.8% polyethylene glycol, 0.1~1% polyvinyl pyrrole
Alkanone is added in the water of surplus, is mixed to and is uniformly produced flocking additive；This flocking additive is added to making herbs into wool acid
Solution, its mass ratio is 0.2~0.7:100；
2) polysilicon chip surface wool manufacturing：Polysilicon chip is immersed in the making herbs into wool acid solution containing flocking additive and made
Suede, temperature control is at 8~20 DEG C, and the making herbs into wool time is 120~240s.
The addition of polysilicon flocking additive can make to produce more microbubbles during making herbs into wool, in silicon chip surface by gas
The position for steeping absorption is small by corrosion impact, and the position of bubble-free is big by corrosion impact, and the presence of micro-bubble realizes even and fine
Close concavo-convex making herbs into wool effect.
The invention provides a kind of efficient polysilicon flocking additive, it contains the surfactant of specific function, it
Addition can improve the wetability of Woolen-making liquid and silicon chip surface, form substantial amounts of micro-structural in polycrystalline making herbs into wool etch pit, from
And the sunken photosensitiveness on surface is further lifted, while it can also improve sour making herbs into wool environment, control reaction rate is reached, reflectivity is reduced
Effect, make reaction more uniform, male and fomale(M＆F) is finer and closely woven.And process conditions are controlled significantly, requirement of the technique to temperature is reduced,
Technique is set more to stablize, efficiency is greatly improved.
The polycrystalline silicon texturing additive prepared by using the present invention to carry out after sour making herbs into wool polysilicon chip, obtains
Silicon chip surface is uniform, reflectivity reduction by 3~5%, cell conversion rate lifting 0.1~0.2%.
Embodiment
With reference to embodiment, the present invention is further detailed explanation.
Embodiment 1：
By 0.5g sodium citrate, 2g citric acid, 0.05g fluorocarbon surfactant, 0.4g polyethylene glycol, 0.6g
Polyvinylpyrrolidone be added in the water of surplus, mix to and uniformly produce flocking additive.By 100g this making herbs into wool
Additive is added in the sour Woolen-making liquids of 19kg, is mixed evenly.
Polysilicon chip is immersed in the above-mentioned sour Woolen-making liquid containing flocking additive and carries out making herbs into wool, temperature control at 10 DEG C,
The making herbs into wool time is 200s.
Embodiment 2：
By 0.7g sodium citrate, 2.3g citric acid, 0.06g fluorocarbon surfactant, 0.6g polyethylene glycol,
0.5g polyvinylpyrrolidone is added to the water of surplus, mixes to and uniformly produces flocking additive.By 100g this system
Suede additive is added in the sour Woolen-making liquids of 22kg, is mixed evenly.
Polysilicon chip is immersed in the above-mentioned sour Woolen-making liquid containing flocking additive and carries out making herbs into wool, temperature control at 15 DEG C,
The making herbs into wool time is 140s.
Embodiment 3：
By 0.8g sodium citrate, 2g citric acid, 0.05g fluorocarbon surfactant, 0.6g polyethylene glycol, 0.8g
Polyvinylpyrrolidone be added to the water of surplus, mix to and uniformly produce flocking additive.100g this making herbs into wool is added
Plus agent is added in the sour Woolen-making liquids of 15kg, is mixed evenly.
Polysilicon chip is immersed in the above-mentioned sour Woolen-making liquid for having added flocking additive and carries out making herbs into wool, temperature control is at 9 DEG C, system
The suede time is 160s.
Embodiment 4：
By 0.08g sodium citrate, 1g citric acid, 0.03g fluorocarbon surfactant, 0.08g polyethylene glycol,
0.1g polyvinylpyrrolidone is added to the water of surplus, mixes to and uniformly produces flocking additive.By 100g this system
Suede additive is added in the sour Woolen-making liquids of 15kg, is mixed evenly.
Polysilicon chip is immersed in the above-mentioned sour Woolen-making liquid for having added flocking additive and carries out making herbs into wool, temperature control is at 8 DEG C, system
The suede time is 240s.
As a result：The making herbs into wool of polysilicon chip, etching extent about 0.35~0.45, reflectivity are carried out by using this flocking additive
Reduction by 3~5%, 50~80mA of current boost, cell conversion rate lifting 0.1~0.2%.
It is described above, be only presently preferred embodiments of the present invention, any formal limitation not done to the present invention, it is every according to
According to any simple modification, equivalent variations made in technical spirit of the invention to above example, the guarantor of the present invention is each fallen within
Within the scope of shield.
Claims (8)
1. a kind of polycrystalline silicon texturing additive, it is characterised in that according to mass percent, including following components：
2. a kind of polycrystalline silicon texturing additive according to claim 1, it is characterised in that described non-ionic surface is lived
Property agent be fluorine carbon surfactant, polysiloxane-based surfactant.
3. a kind of polycrystalline silicon texturing additive according to claim 1, it is characterised in that described peg molecule
Measure as 200~1000.
4. a kind of polycrystalline silicon texturing additive according to claim 1, it is characterised in that described water is deionization
Water.
5. a kind of Woolen-making liquid for polycrystalline silicon texturing, it is characterised in that including any one institute in such as Claims 1 to 4
The polycrystalline silicon texturing additive and making herbs into wool acid solution stated, described polycrystalline silicon texturing additive and the quality of making herbs into wool acid solution
Than for 0.2~0.7：100, described making herbs into wool acid solution is the mixed aqueous solution or hydrofluoric acid and chromic acid of hydrofluoric acid and nitric acid
Mixed aqueous solution.
6. a kind of method of polycrystalline silicon texturing, it is characterised in that entered using the Woolen-making liquid described in claim 5 to polysilicon chip
Row surface wool manufacturing.
7. the method for polycrystalline silicon texturing according to claim 6, it is characterised in that making herbs into wool temperature is 8~20 DEG C, making herbs into wool
Time is 120~240s.
8. polycrystalline silicon texturing method according to claim 6, it is characterised in that comprise the following steps：
1) preparation of polycrystalline silicon texturing additive：By 0.08~0.8% sodium citrate, 1.0~2.5% citric acid,
0.03~0.07% nonionic surfactant, 0.08~0.8% polyethylene glycol, 0.1~1% polyvinylpyrrolidone
It is added in the water of surplus, mixes to and uniformly produce flocking additive；This flocking additive is added to making herbs into wool acid solution,
Its mass ratio is 0.2~0.7:100；
2) polysilicon chip surface wool manufacturing：Polysilicon chip is immersed in the making herbs into wool acid solution containing flocking additive and carries out making herbs into wool,
Temperature control is at 8~20 DEG C, and the making herbs into wool time is 120~240s.
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| CN106024988B (en) * | 2016-07-26 | 2017-12-15 | 南京科乃迪科环保科技有限公司 | The black silicon of one-step method wet method prepares and surface treatment method |
| CN106119976B (en) * | 2016-08-19 | 2018-08-14 | 常州时创能源科技有限公司 | Additive and its application of the black silicon making herbs into wool of polycrystalline with reaming acid solution |
| CN106222755A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for polycrystalline silicon texturing |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN106676636A (en) * | 2017-01-10 | 2017-05-17 | 何秀英 | Chemical additive for texture etching of silicon crystal surface |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
| CN110644049A (en) * | 2018-06-26 | 2020-01-03 | 上海硅洋新能源科技有限公司 | Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid |
| CN109103297A (en) * | 2018-08-17 | 2018-12-28 | 安徽英发三友新能源科技有限公司 | A kind of monocrystalline solar cells piece process for etching |
| CN110644053A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula and using method for preparing corn-shaped monocrystalline silicon suede composite texturing additive |
| CN116004232A (en) * | 2022-11-25 | 2023-04-25 | 常州君合科技股份有限公司 | Monocrystalline silicon polishing alkali etching additive and application thereof |
| CN115745419B (en) * | 2022-11-25 | 2024-04-12 | 常州君合科技股份有限公司 | Method for synthesizing high-performance photovoltaic glass antireflection film by sectionally hydrolyzing tetraethoxysilane |
| CN115820256A (en) * | 2022-11-25 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Additive for improving uniformity of texture of solar cell and application process thereof |
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| CN101586239A (en) * | 2009-06-08 | 2009-11-25 | 江苏林洋新能源有限公司 | Additive for preparing polysilicon etching chemical suede |
| CN101937946B (en) * | 2010-09-16 | 2012-05-09 | 浙江大学 | Surface texture method of solar battery silicon slice |
| CN102330091B (en) * | 2011-07-27 | 2012-07-04 | 常州时创能源科技有限公司 | Additive for polycrystalline silicon wafer acidity texture preparation liquid and use method thereof |
| CN102330101A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cleanout fluid used for cleaning after polysilicon texture preparation and preparation method thereof |
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| CN102888657B (en) * | 2012-10-22 | 2015-04-15 | 江苏荣马新能源有限公司 | Additive for fluffing agent of crystalline silicon solar cell |
| CN103132079B (en) * | 2013-02-07 | 2015-07-08 | 睿纳能源科技（上海）有限公司 | Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof |
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| CN103668467B (en) * | 2013-12-20 | 2016-08-31 | 常州时创能源科技有限公司 | A kind of polycrystalline silicon texturing additive and application thereof |
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| CN104328504A (en) * | 2014-11-13 | 2015-02-04 | 苏州润阳光伏科技有限公司 | Polycrystal texturing auxiliary and application method thereof |
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