CN104294369A - Acid texturing additive for polysilicon film and use method thereof - Google Patents

Acid texturing additive for polysilicon film and use method thereof Download PDF

Info

Publication number
CN104294369A
CN104294369A CN201410636695.2A CN201410636695A CN104294369A CN 104294369 A CN104294369 A CN 104294369A CN 201410636695 A CN201410636695 A CN 201410636695A CN 104294369 A CN104294369 A CN 104294369A
Authority
CN
China
Prior art keywords
wool
additive
making herbs
acid
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410636695.2A
Other languages
Chinese (zh)
Inventor
陶龙忠
李海波
杨灼坚
张尧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Original Assignee
SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd filed Critical SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority to CN201410636695.2A priority Critical patent/CN104294369A/en
Publication of CN104294369A publication Critical patent/CN104294369A/en
Pending legal-status Critical Current

Links

Abstract

The invention belongs to the field of manufacture of solar batteries, relates to an acid texturing additive for a polysilicon film and a use method thereof, and the additive comprises the components of a perfluorinated nonionic surfactant, polyalcohol, citric acids and the balance of water. A method for acid texturing by using the additive comprises the following steps: (1) preparing the perfluorinated nonionic surfactant, the polyalcohol, the citric acids and the water to obtain the acid texturing additive for the polysilicon; (2) preparing hydrofluoric acids, nitric acids and the water to obtain an acid texturing solution; (3) adding the additive into the acid texturing solution which is obtained in the step (2); and (4) putting a silicon film into the acid texturing solution which is obtained in the step (3) for texturing. Through the use of the additive, a texturing surface is more uniform, an etch pit is finer, and compared with the conventional texturing, the reflectivity can be reduced by 2-3%.

Description

A kind of additive for polysilicon chip acid making herbs into wool and using method
technical field:
The present invention relates to additive and the using method of a kind of polysilicon chip acid making herbs into wool, belong to solar cell polysilicon making herbs into wool field.
  
technical background:
In solar cell fabrication process, making herbs into wool is the beginning of whole battery manufacture operation, making herbs into wool operation is reducing reflectivity, is improving light utilization efficiency, is improving battery outward appearance and improve in photoelectric transformation efficiency and play great role, polysilicon is made up of the crystal grain of different crystal orientations due to itself, if adopt monocrystalline anisotropic etch to carry out making herbs into wool reflectivity can be made higher and cause light trapping effect not obvious, so adopt the method for acid isotropic etch to reduce reflectivity.
The unsatisfactory subject matter of making herbs into wool effect of conventional acid making herbs into wool has that corrosion pit size is comparatively large, poor, the black silk of homogeneity is serious, reflectivity is higher many thus affect the outward appearance of battery, reduction photoelectric transformation efficiency with surface imperfection.Polycrystalline making herbs into wool additive, by changing silicon chip surface Air Bubble Size, how many and second cosmic velocity thus improve size and the homogeneity of corrosion pit, reduces reflectivity; Optimize Defect place erosion rate, the quantity of the black silk of silicon chip surface is reduced thus the outward appearance of battery after improving making herbs into wool, improve photoelectric transformation efficiency.
  
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of additive for polysilicon chip acid making herbs into wool, the component that described additive-package contains is: the water of perfluor nonionic surface active agent, polyvalent alcohol, citric acid and surplus, wherein the weight ratio of perfluor nonionic surface active agent and water is 0.01 ~ 5:100, the weight ratio of polyvalent alcohol and water is 0.05 ~ 5:100, and the weight ratio of citric acid and water is 0.05 ~ 5:100.
As a further improvement on the present invention, described water is deionized water.
As a further improvement on the present invention, described polyvalent alcohol is polyvalent alcohol one or more the combination wherein containing 4 ~ 8 hydroxyls.
The above-mentioned additive of utilization described in this carries out the method for sour making herbs into wool, comprises the following steps:
(1) water of perfluor nonionic surface active agent, polyvalent alcohol, citric acid and surplus is proportionally made into the additive of polysilicon chip acid making herbs into wool; (2) hydrofluoric acid, nitric acid and water are configured to sour making herbs into wool solution.(3) additive is added in the obtained sour Woolen-making liquid of step (2); (4) put into by silicon chip in the obtained sour making herbs into wool solution of step (3) and carry out making herbs into wool, making herbs into wool temperature is 0 ~ 25 DEG C, preferably 2 ~ 10 DEG C, and the making herbs into wool time is 50 ~ 200s.
As a further improvement on the present invention, the additive described in step (3) and the weight ratio of sour Woolen-making liquid are 0.5 ~ 2:100.
As a further improvement on the present invention, the making herbs into wool temperature described in step (4) is 0 ~ 25 DEG C, preferably 2 ~ 10 DEG C, and the making herbs into wool time is 50 ~ 200s.
The invention has the beneficial effects as follows: after using additive of the present invention, matte size is tiny and even, stronger, the black silk quantity of Wafer Cleaning ability is reduced, reflectivity reduces 2-3% compared with conventional making herbs into wool, improve cell photoelectric efficiency of conversion, matte is more even, the cleansing power stain silicon chip is stronger, reduces surface imperfection and contributes to improving open circuit voltage.
Accompanying drawing explanation
Fig. 1 is conventional making herbs into wool polysilicon chip surface SEM picture;
Fig. 2 is additive making herbs into wool polysilicon chip of the present invention surface SEM picture.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
  
Embodiment
Embodiment 1 is comparative group example:
1) configure acid Woolen-making liquid: by 3L deionized water, 1.5L concentration is the hydrofluoric acid of 49%, and 5.5L concentration is the nitric acid of 68-71%, to add successively in texturing slot and to stir, and obtains the acid Woolen-making liquid of 10L;
2) making herbs into wool: solar energy polycrystalline silicon sheet is put into texturing slot and carry out making herbs into wool, the temperature of making herbs into wool is 8 DEG C, and the making herbs into wool time is 80s.
Reflectivity after conventional making herbs into wool is 24.0%, obtains that size is comparatively large, the matte of skewness as shown in Figure 1.
Embodiment 2:
1) configure polycrystalline making herbs into wool additive: by 0.01g perfluor nonionic surface active agent, 0.05g tetramethylolmethane, 0.05g citric acid adds in 100ml deionized water and is made into polycrystalline making herbs into wool additive;
2) configure acid Woolen-making liquid: by 3L deionized water, 1.5L concentration is the hydrofluoric acid of 49%, and 5.5L concentration is the nitric acid of 68-71%, to add successively in texturing slot and to stir, and obtains the acid Woolen-making liquid of 10L;
3) 0.2L additive is added step 2) in the acid Woolen-making liquid that configures;
4) making herbs into wool: solar energy polycrystalline silicon sheet is put into texturing slot and carry out making herbs into wool, the temperature of making herbs into wool is 8 DEG C, and the making herbs into wool time is 80s.
Embodiment 3:
1) obtain configuration polycrystalline making herbs into wool additive: by 5g perfluor nonionic surface active agent, 5g propyl carbinol, 5g citric acid adds in 100ml deionized water and is made into polycrystalline making herbs into wool additive;
2) configure acid Woolen-making liquid: by 3L deionized water, 1.5L concentration is the hydrofluoric acid of 49%, and 5.5L concentration is the nitric acid of 68-71%, to add successively in texturing slot and to stir, and obtains the acid Woolen-making liquid of 10L;
3) 0.05L additive is added step 2) in the acid Woolen-making liquid that configures;
4) making herbs into wool: solar energy polycrystalline silicon sheet is put into texturing slot and carry out making herbs into wool, the temperature of making herbs into wool is 8 DEG C, and the making herbs into wool time is 80s.
Embodiment 4:
1) obtain configuration polycrystalline making herbs into wool additive: by 0.1g perfluor nonionic surface active agent, 1g tetramethylolmethane, 1g citric acid adds in 100ml deionized water and is made into polycrystalline making herbs into wool additive;
2) configure acid Woolen-making liquid: by 3L deionized water, 1.5L concentration is the hydrofluoric acid of 49%, and 5.5L concentration is the nitric acid of 68-71%, to add successively in texturing slot and to stir, and obtains the acid Woolen-making liquid of 10L;
3) 0.08L additive is added step 2) in the acid Woolen-making liquid that configures;
4) making herbs into wool: solar energy polycrystalline silicon sheet is put into texturing slot and carry out making herbs into wool, the temperature of making herbs into wool is 8 DEG C, and the making herbs into wool time is 80s.
Reflectivity after additive making herbs into wool is 21.5%, obtains the matte that size is less, be evenly distributed as shown in Figure 2.Can obtain in comparison diagram 1 additive making herbs into wool than conventional making herbs into wool matte evenly, corrosion pit is less.
  

Claims (6)

1. the additive for polysilicon chip acid making herbs into wool, the component that its feature contains in described additive-package is: perfluor nonionic surface active agent, polyvalent alcohol, citric acid and water, wherein the weight ratio of perfluor nonionic surface active agent and water is 0.01 ~ 5:100, the weight ratio of polyvalent alcohol and water is 0.05 ~ 5:100, and the weight ratio of citric acid and water is 0.05 ~ 5:100.
2. a kind of additive for polysilicon chip acid making herbs into wool according to claim 1, is characterized in that: described water is deionized water.
3. a kind of additive for polysilicon chip acid making herbs into wool according to claim 1, is characterized in that: described polyvalent alcohol is polyvalent alcohol one or more the combination wherein containing 4 ~ 8 hydroxyls.
4. application rights requires that the additive for polysilicon chip acid making herbs into wool described in 1 to 3 any one carries out a method for sour making herbs into wool, it is characterized in that, comprises the following steps:
1) perfluor nonionic surface active agent, polyvalent alcohol, citric acid and water are made into the additive of polysilicon chip acid making herbs into wool;
2) hydrofluoric acid, nitric acid and water are configured to sour making herbs into wool solution;
3) additive obtained for step 1) is added step 2) in obtained sour Woolen-making liquid;
4) silicon chip is put in the obtained sour making herbs into wool solution of step 3) and carry out making herbs into wool.
5. according to claim 4ly a kind ofly apply the method that additive carries out sour making herbs into wool, it is characterized in that: the additive described in step (3) and the weight ratio of sour Woolen-making liquid are 0.5 ~ 2:100.
6. according to claim 4ly a kind ofly apply the method that additive carries out sour making herbs into wool, it is characterized in that: the making herbs into wool temperature described in step (4) is 0 ~ 25 DEG C, preferably 2 ~ 10 DEG C, and the making herbs into wool time is 50 ~ 200s.
CN201410636695.2A 2014-11-13 2014-11-13 Acid texturing additive for polysilicon film and use method thereof Pending CN104294369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410636695.2A CN104294369A (en) 2014-11-13 2014-11-13 Acid texturing additive for polysilicon film and use method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410636695.2A CN104294369A (en) 2014-11-13 2014-11-13 Acid texturing additive for polysilicon film and use method thereof

Publications (1)

Publication Number Publication Date
CN104294369A true CN104294369A (en) 2015-01-21

Family

ID=52314310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410636695.2A Pending CN104294369A (en) 2014-11-13 2014-11-13 Acid texturing additive for polysilicon film and use method thereof

Country Status (1)

Country Link
CN (1) CN104294369A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104651949A (en) * 2015-02-11 2015-05-27 常州君合科技股份有限公司 Multi-crystalline silicon wafer texturization additive
CN106119976A (en) * 2016-08-19 2016-11-16 常州时创能源科技有限公司 The additive of polycrystalline black silicon making herbs into wool reaming acid solution and application thereof
CN106521636A (en) * 2016-12-30 2017-03-22 德清丽晶能源科技有限公司 Single crystal wafer texturing additive
CN110137079A (en) * 2019-05-22 2019-08-16 苏州晶瑞化学股份有限公司 Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent
CN110644049A (en) * 2018-06-26 2020-01-03 上海硅洋新能源科技有限公司 Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid
CN114122190A (en) * 2021-10-14 2022-03-01 山西潞安太阳能科技有限责任公司 Method for improving monocrystalline PERC thermal oxidation process by normal pressure diffusion equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356467A (en) * 2009-03-18 2012-02-15 纳幕尔杜邦公司 Textured silicon substrate and method
CN103409808A (en) * 2013-09-04 2013-11-27 常州时创能源科技有限公司 Texturization additive for polycrystalline silicon slices and use method of texturization additive
CN103710705A (en) * 2013-12-23 2014-04-09 北京合德丰材料科技有限公司 Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof
CN104094383A (en) * 2011-08-22 2014-10-08 1366科技公司 Formulation for acidic wet chemical etching of silicon wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356467A (en) * 2009-03-18 2012-02-15 纳幕尔杜邦公司 Textured silicon substrate and method
CN104094383A (en) * 2011-08-22 2014-10-08 1366科技公司 Formulation for acidic wet chemical etching of silicon wafers
CN103409808A (en) * 2013-09-04 2013-11-27 常州时创能源科技有限公司 Texturization additive for polycrystalline silicon slices and use method of texturization additive
CN103710705A (en) * 2013-12-23 2014-04-09 北京合德丰材料科技有限公司 Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104651949A (en) * 2015-02-11 2015-05-27 常州君合科技股份有限公司 Multi-crystalline silicon wafer texturization additive
CN106119976A (en) * 2016-08-19 2016-11-16 常州时创能源科技有限公司 The additive of polycrystalline black silicon making herbs into wool reaming acid solution and application thereof
CN106521636A (en) * 2016-12-30 2017-03-22 德清丽晶能源科技有限公司 Single crystal wafer texturing additive
CN110644049A (en) * 2018-06-26 2020-01-03 上海硅洋新能源科技有限公司 Diamond wire polycrystalline silicon wafer texturing additive and diamond wire polycrystalline silicon wafer texturing etching liquid
CN110137079A (en) * 2019-05-22 2019-08-16 苏州晶瑞化学股份有限公司 Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent
CN114122190A (en) * 2021-10-14 2022-03-01 山西潞安太阳能科技有限责任公司 Method for improving monocrystalline PERC thermal oxidation process by normal pressure diffusion equipment
CN114122190B (en) * 2021-10-14 2023-12-26 山西潞安太阳能科技有限责任公司 Transformation method for realizing monocrystalline PERC (PERC) thermal oxidation process by normal pressure diffusion equipment

Similar Documents

Publication Publication Date Title
CN104294369A (en) Acid texturing additive for polysilicon film and use method thereof
EP2891733B1 (en) Polycrystalline silicon wafer texturizing additive and use thereof
CN102703989B (en) Class monocrystalline solar cells leather producing process
JP6553731B2 (en) N-type double-sided battery wet etching method
KR101613541B1 (en) Additive for preparing suede on monocrystalline silicon chip and use method thereof
CN102181935B (en) Method and corrosive liquid for making texture surface of monocrystalline silicon
CN106098810B (en) A kind of preparation method of crystal silicon solar energy battery suede structure
CN103938276A (en) Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN104562011B (en) The texturing assistant agent and process for etching of polysilicon chip
CN110922970A (en) PERC battery back polishing additive and technology
CN106222755A (en) Additive and application process thereof for polycrystalline silicon texturing
CN107287597A (en) Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method
CN107393818B (en) Acid-base secondary texturing method of polycrystalline silicon solar cell and polycrystalline silicon thereof
CN106340446B (en) A kind of method of wet process removal diamond wire saw polysilicon chip surface line marker
CN102337596B (en) Monocrystalline silicon solar cell alkali texturing assistant agent and its application
CN103668467B (en) A kind of polycrystalline silicon texturing additive and application thereof
CN103924305B (en) A kind of preparation method of pseudo single crystal silicon chip suede
TWI506122B (en) Etching composition and etching method for semiconductor wafer
CN105133038A (en) Preparing method for polycrystalline silicon of efficient nanometer textured structure and application thereof
CN104328504A (en) Polycrystal texturing auxiliary and application method thereof
CN103541017A (en) Polycrystalline silicon solar cell wet-process texturization method
CN107245761A (en) Diamond wire polycrystalline silicon texturing adjuvant and its application
CN104393094A (en) N-type silicon chip cleaning texturing method for HIT battery
CN204167329U (en) Metallurgy polycrystalline silicon solar battery sheet and solar panel
CN102185028B (en) Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150121